JPS5218169A - Production method of semiconductor - Google Patents

Production method of semiconductor

Info

Publication number
JPS5218169A
JPS5218169A JP9459475A JP9459475A JPS5218169A JP S5218169 A JPS5218169 A JP S5218169A JP 9459475 A JP9459475 A JP 9459475A JP 9459475 A JP9459475 A JP 9459475A JP S5218169 A JPS5218169 A JP S5218169A
Authority
JP
Japan
Prior art keywords
semiconductor
production method
metal layer
reproducibility
lift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9459475A
Other languages
Japanese (ja)
Other versions
JPS5845810B2 (en
Inventor
Takehiko Kubota
Koichi Higuchi
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9459475A priority Critical patent/JPS5845810B2/en
Publication of JPS5218169A publication Critical patent/JPS5218169A/en
Publication of JPS5845810B2 publication Critical patent/JPS5845810B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: In order to promote the reproducibility through improving the lift-off wiring method, by means of providing the gap between the metal layer being directly coated on the surface of base plate and the metal layer being formed on resist film.
COPYRIGHT: (C)1977,JPO&Japio
JP9459475A 1975-08-01 1975-08-01 Pattern formation method Expired JPS5845810B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9459475A JPS5845810B2 (en) 1975-08-01 1975-08-01 Pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9459475A JPS5845810B2 (en) 1975-08-01 1975-08-01 Pattern formation method

Publications (2)

Publication Number Publication Date
JPS5218169A true JPS5218169A (en) 1977-02-10
JPS5845810B2 JPS5845810B2 (en) 1983-10-12

Family

ID=14114592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9459475A Expired JPS5845810B2 (en) 1975-08-01 1975-08-01 Pattern formation method

Country Status (1)

Country Link
JP (1) JPS5845810B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156488A (en) * 1978-05-31 1979-12-10 Hitachi Ltd Manufacture for semiconductor device
JPS55105350A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device
US4882839A (en) * 1988-04-22 1989-11-28 Nec Corporation Method of manufacturing multi-layered wiring substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54156488A (en) * 1978-05-31 1979-12-10 Hitachi Ltd Manufacture for semiconductor device
JPS55105350A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device
JPS6210027B2 (en) * 1979-02-07 1987-03-04 Nippon Electric Co
US4882839A (en) * 1988-04-22 1989-11-28 Nec Corporation Method of manufacturing multi-layered wiring substrate

Also Published As

Publication number Publication date
JPS5845810B2 (en) 1983-10-12

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