JPS5217765A - Method to diffuse arsenic in a silicone wafer - Google Patents
Method to diffuse arsenic in a silicone waferInfo
- Publication number
- JPS5217765A JPS5217765A JP50094073A JP9407375A JPS5217765A JP S5217765 A JPS5217765 A JP S5217765A JP 50094073 A JP50094073 A JP 50094073A JP 9407375 A JP9407375 A JP 9407375A JP S5217765 A JPS5217765 A JP S5217765A
- Authority
- JP
- Japan
- Prior art keywords
- silicone wafer
- diffuse arsenic
- silicone
- arsenic
- diffuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001296 polysiloxane Polymers 0.000 title abstract 3
- 229910052785 arsenic Inorganic materials 0.000 title abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To exactly control the diffusion in a silicone wafer by using silicone arsenic crystal which is chemically stable.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50094073A JPS5217765A (en) | 1975-07-31 | 1975-07-31 | Method to diffuse arsenic in a silicone wafer |
DE19762634427 DE2634427B2 (en) | 1975-07-31 | 1976-07-30 | ARSENIC DIFFUSION INTO SILICON PLATES |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50094073A JPS5217765A (en) | 1975-07-31 | 1975-07-31 | Method to diffuse arsenic in a silicone wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5217765A true JPS5217765A (en) | 1977-02-09 |
JPS5344789B2 JPS5344789B2 (en) | 1978-12-01 |
Family
ID=14100318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50094073A Granted JPS5217765A (en) | 1975-07-31 | 1975-07-31 | Method to diffuse arsenic in a silicone wafer |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5217765A (en) |
DE (1) | DE2634427B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62119109U (en) * | 1986-01-17 | 1987-07-29 |
-
1975
- 1975-07-31 JP JP50094073A patent/JPS5217765A/en active Granted
-
1976
- 1976-07-30 DE DE19762634427 patent/DE2634427B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE2634427A1 (en) | 1977-02-17 |
JPS5344789B2 (en) | 1978-12-01 |
DE2634427B2 (en) | 1978-01-05 |
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