JPS52155531A - Dry photo resist developing method - Google Patents
Dry photo resist developing methodInfo
- Publication number
- JPS52155531A JPS52155531A JP7117777A JP7117777A JPS52155531A JP S52155531 A JPS52155531 A JP S52155531A JP 7117777 A JP7117777 A JP 7117777A JP 7117777 A JP7117777 A JP 7117777A JP S52155531 A JPS52155531 A JP S52155531A
- Authority
- JP
- Japan
- Prior art keywords
- developing method
- photo resist
- resist developing
- dry photo
- dry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69730376A | 1976-06-17 | 1976-06-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52155531A true JPS52155531A (en) | 1977-12-24 |
JPS5712138B2 JPS5712138B2 (en) | 1982-03-09 |
Family
ID=24800591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7117777A Granted JPS52155531A (en) | 1976-06-17 | 1977-06-17 | Dry photo resist developing method |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS52155531A (en) |
DE (1) | DE2726813C2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56137347A (en) * | 1980-03-29 | 1981-10-27 | Tokyo Ohka Kogyo Co Ltd | Photosensitive composition for dry development |
JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
JPS582025A (en) * | 1981-06-29 | 1983-01-07 | Fujitsu Ltd | Pattern formation |
JPS585735A (en) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | Manufacture of patterned resist film on substrate |
JPS5860537A (en) * | 1981-10-07 | 1983-04-11 | Tokyo Ohka Kogyo Co Ltd | Dry type pattern forming method |
JPS58117539A (en) * | 1981-12-30 | 1983-07-13 | Tokyo Denshi Kagaku Kabushiki | Detection for end point of dry developing |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4187331A (en) * | 1978-08-24 | 1980-02-05 | International Business Machines Corp. | Fluorine plasma resist image hardening |
JPS5565365A (en) * | 1978-11-07 | 1980-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
JPS5569265A (en) * | 1978-11-15 | 1980-05-24 | Hitachi Ltd | Pattern-forming method |
US4232110A (en) * | 1979-03-12 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Solid state devices formed by differential plasma etching of resists |
US4278753A (en) | 1980-02-25 | 1981-07-14 | Horizons Research Incorporated | Plasma developable photoresist composition with polyvinyl formal binder |
DE3015469A1 (en) * | 1980-04-22 | 1981-10-29 | Dai Nippon Printing Co., Ltd. | Lithographic printing plate mfr. - by forming protective hardened organo-polysiloxane layer on silicone layer, rendering unprotected areas oleophilic and removing protection |
US4497891A (en) * | 1983-10-25 | 1985-02-05 | International Business Machines Corporation | Dry-developed, negative working electron resist system |
DE3913434A1 (en) * | 1989-04-24 | 1990-10-25 | Siemens Ag | DRY-WRAPPABLE RESIST SYSTEM |
EP0465064B1 (en) * | 1990-06-29 | 1998-12-09 | Fujitsu Limited | Process for forming patterns |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4999558A (en) * | 1973-01-25 | 1974-09-20 | ||
JPS5090330A (en) * | 1973-12-10 | 1975-07-19 | ||
JPS5151938A (en) * | 1974-10-31 | 1976-05-07 | Tokyo Ohka Kogyo Co Ltd | Fuotorejisutono kaikahoho |
JPS5272175A (en) * | 1975-12-12 | 1977-06-16 | Mitsubishi Electric Corp | Mask patterning of resist meterial |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3705055A (en) * | 1970-09-18 | 1972-12-05 | Western Electric Co | Method of descumming photoresist patterns |
US3920483A (en) * | 1974-11-25 | 1975-11-18 | Ibm | Method of ion implantation through a photoresist mask |
-
1977
- 1977-06-14 DE DE19772726813 patent/DE2726813C2/en not_active Expired
- 1977-06-17 JP JP7117777A patent/JPS52155531A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4999558A (en) * | 1973-01-25 | 1974-09-20 | ||
JPS5090330A (en) * | 1973-12-10 | 1975-07-19 | ||
JPS5151938A (en) * | 1974-10-31 | 1976-05-07 | Tokyo Ohka Kogyo Co Ltd | Fuotorejisutono kaikahoho |
JPS5272175A (en) * | 1975-12-12 | 1977-06-16 | Mitsubishi Electric Corp | Mask patterning of resist meterial |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56137347A (en) * | 1980-03-29 | 1981-10-27 | Tokyo Ohka Kogyo Co Ltd | Photosensitive composition for dry development |
JPH0128368B2 (en) * | 1980-03-29 | 1989-06-02 | Tokyo Oka Kogyo Kk | |
JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
JPS6341047B2 (en) * | 1980-08-29 | 1988-08-15 | Tokyo Oka Kogyo Kk | |
JPS585735A (en) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | Manufacture of patterned resist film on substrate |
JPH0222371B2 (en) * | 1981-06-01 | 1990-05-18 | Daikin Ind Ltd | |
JPS582025A (en) * | 1981-06-29 | 1983-01-07 | Fujitsu Ltd | Pattern formation |
JPS6364773B2 (en) * | 1981-06-29 | 1988-12-13 | ||
JPS5860537A (en) * | 1981-10-07 | 1983-04-11 | Tokyo Ohka Kogyo Co Ltd | Dry type pattern forming method |
JPS58117539A (en) * | 1981-12-30 | 1983-07-13 | Tokyo Denshi Kagaku Kabushiki | Detection for end point of dry developing |
Also Published As
Publication number | Publication date |
---|---|
JPS5712138B2 (en) | 1982-03-09 |
DE2726813A1 (en) | 1977-12-29 |
DE2726813C2 (en) | 1984-02-23 |
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