JPS5213786A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5213786A
JPS5213786A JP50089255A JP8925575A JPS5213786A JP S5213786 A JPS5213786 A JP S5213786A JP 50089255 A JP50089255 A JP 50089255A JP 8925575 A JP8925575 A JP 8925575A JP S5213786 A JPS5213786 A JP S5213786A
Authority
JP
Japan
Prior art keywords
semiconductor device
section
integratedness
darlington
incorporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50089255A
Other languages
Japanese (ja)
Inventor
Kenji Kaneko
Takahiro Okabe
Yoshito Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50089255A priority Critical patent/JPS5213786A/en
Publication of JPS5213786A publication Critical patent/JPS5213786A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:In order to make the incorporation of linear section, power section, and digital section of which integratedness are big and the Darlington element of which response speed is quick and the residual voltage is small possible.
JP50089255A 1975-07-23 1975-07-23 Semiconductor device Pending JPS5213786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50089255A JPS5213786A (en) 1975-07-23 1975-07-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50089255A JPS5213786A (en) 1975-07-23 1975-07-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5213786A true JPS5213786A (en) 1977-02-02

Family

ID=13965644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50089255A Pending JPS5213786A (en) 1975-07-23 1975-07-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5213786A (en)

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