JPS52137278A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS52137278A
JPS52137278A JP5315876A JP5315876A JPS52137278A JP S52137278 A JPS52137278 A JP S52137278A JP 5315876 A JP5315876 A JP 5315876A JP 5315876 A JP5315876 A JP 5315876A JP S52137278 A JPS52137278 A JP S52137278A
Authority
JP
Japan
Prior art keywords
radiation detector
semiconductor radiation
detector
radiation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5315876A
Other languages
Japanese (ja)
Other versions
JPS602787B2 (en
Inventor
Noboru Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51053158A priority Critical patent/JPS602787B2/en
Publication of JPS52137278A publication Critical patent/JPS52137278A/en
Publication of JPS602787B2 publication Critical patent/JPS602787B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To detect mechanically the surface of a radiation detector and prevent the semiconductor from being contaminated with radiation by improving the shielding effect by providing a net-like metallic layer on the sensitive side of the detector.
JP51053158A 1976-05-12 1976-05-12 semiconductor radiation detector Expired JPS602787B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51053158A JPS602787B2 (en) 1976-05-12 1976-05-12 semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51053158A JPS602787B2 (en) 1976-05-12 1976-05-12 semiconductor radiation detector

Publications (2)

Publication Number Publication Date
JPS52137278A true JPS52137278A (en) 1977-11-16
JPS602787B2 JPS602787B2 (en) 1985-01-23

Family

ID=12935027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51053158A Expired JPS602787B2 (en) 1976-05-12 1976-05-12 semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS602787B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146071A (en) * 1979-05-02 1980-11-14 Toshiba Corp Radiant ray detector of semiconductor
JPS5977245U (en) * 1982-11-13 1984-05-25 富士電機株式会社 semiconductor radiation detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146071A (en) * 1979-05-02 1980-11-14 Toshiba Corp Radiant ray detector of semiconductor
JPS6223268B2 (en) * 1979-05-02 1987-05-22 Tokyo Shibaura Electric Co
JPS5977245U (en) * 1982-11-13 1984-05-25 富士電機株式会社 semiconductor radiation detector

Also Published As

Publication number Publication date
JPS602787B2 (en) 1985-01-23

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