JPS52133762A - Complementary type field effect semiconductor in tegrated circuit device - Google Patents
Complementary type field effect semiconductor in tegrated circuit deviceInfo
- Publication number
- JPS52133762A JPS52133762A JP5068576A JP5068576A JPS52133762A JP S52133762 A JPS52133762 A JP S52133762A JP 5068576 A JP5068576 A JP 5068576A JP 5068576 A JP5068576 A JP 5068576A JP S52133762 A JPS52133762 A JP S52133762A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- circuit device
- type field
- complementary type
- effect semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a CMOS type IC by providing P type wells in an n-type substrate, providing an n<+> layer in one of them to make an n-MISFET and providing additionally n region and P<+> region in the other to make a P-MISFET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51050685A JPS5937584B2 (en) | 1976-04-30 | 1976-04-30 | Complementary field effect semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51050685A JPS5937584B2 (en) | 1976-04-30 | 1976-04-30 | Complementary field effect semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52133762A true JPS52133762A (en) | 1977-11-09 |
JPS5937584B2 JPS5937584B2 (en) | 1984-09-11 |
Family
ID=12865768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51050685A Expired JPS5937584B2 (en) | 1976-04-30 | 1976-04-30 | Complementary field effect semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5937584B2 (en) |
-
1976
- 1976-04-30 JP JP51050685A patent/JPS5937584B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5937584B2 (en) | 1984-09-11 |
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