JPS52133762A - Complementary type field effect semiconductor in tegrated circuit device - Google Patents

Complementary type field effect semiconductor in tegrated circuit device

Info

Publication number
JPS52133762A
JPS52133762A JP5068576A JP5068576A JPS52133762A JP S52133762 A JPS52133762 A JP S52133762A JP 5068576 A JP5068576 A JP 5068576A JP 5068576 A JP5068576 A JP 5068576A JP S52133762 A JPS52133762 A JP S52133762A
Authority
JP
Japan
Prior art keywords
field effect
circuit device
type field
complementary type
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5068576A
Other languages
Japanese (ja)
Other versions
JPS5937584B2 (en
Inventor
Hatsuhide Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51050685A priority Critical patent/JPS5937584B2/en
Publication of JPS52133762A publication Critical patent/JPS52133762A/en
Publication of JPS5937584B2 publication Critical patent/JPS5937584B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a CMOS type IC by providing P type wells in an n-type substrate, providing an n<+> layer in one of them to make an n-MISFET and providing additionally n region and P<+> region in the other to make a P-MISFET.
JP51050685A 1976-04-30 1976-04-30 Complementary field effect semiconductor integrated circuit device Expired JPS5937584B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51050685A JPS5937584B2 (en) 1976-04-30 1976-04-30 Complementary field effect semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51050685A JPS5937584B2 (en) 1976-04-30 1976-04-30 Complementary field effect semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS52133762A true JPS52133762A (en) 1977-11-09
JPS5937584B2 JPS5937584B2 (en) 1984-09-11

Family

ID=12865768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51050685A Expired JPS5937584B2 (en) 1976-04-30 1976-04-30 Complementary field effect semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5937584B2 (en)

Also Published As

Publication number Publication date
JPS5937584B2 (en) 1984-09-11

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