JPS52117036A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS52117036A JPS52117036A JP1031977A JP1031977A JPS52117036A JP S52117036 A JPS52117036 A JP S52117036A JP 1031977 A JP1031977 A JP 1031977A JP 1031977 A JP1031977 A JP 1031977A JP S52117036 A JPS52117036 A JP S52117036A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762612666 DE2612666C2 (en) | 1976-03-25 | 1976-03-25 | Integrated, inverting logic circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52117036A true JPS52117036A (en) | 1977-10-01 |
Family
ID=5973395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1031977A Pending JPS52117036A (en) | 1976-03-25 | 1977-02-03 | Semiconductor memory |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS52117036A (en) |
DE (1) | DE2612666C2 (en) |
FR (1) | FR2345859A1 (en) |
GB (1) | GB1569800A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2816949C3 (en) * | 1978-04-19 | 1981-07-16 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithically integrated semiconductor arrangement and its use for the construction of a memory arrangement |
US4221977A (en) * | 1978-12-11 | 1980-09-09 | Motorola, Inc. | Static I2 L ram |
DE2855866C3 (en) * | 1978-12-22 | 1981-10-29 | Ibm Deutschland Gmbh, 7000 Stuttgart | Method and circuit arrangement for operating an integrated semiconductor memory |
DE2926514A1 (en) * | 1979-06-30 | 1981-01-15 | Ibm Deutschland | ELECTRICAL MEMORY ARRANGEMENT AND METHOD FOR THEIR OPERATION |
EP0065999B1 (en) * | 1981-05-30 | 1986-05-07 | Ibm Deutschland Gmbh | High-speed large-scale integrated memory with bipolar transistors |
DE3380678D1 (en) * | 1983-05-25 | 1989-11-09 | Ibm Deutschland | Semiconductor memory |
DE3483265D1 (en) * | 1984-06-25 | 1990-10-25 | Ibm | MTL STORAGE CELL WITH INHERENT MULTIPLE CAPABILITY. |
DE3572244D1 (en) * | 1985-03-29 | 1989-09-14 | Ibm Deutschland | Stability testing of semiconductor memories |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4924329A (en) * | 1972-05-11 | 1974-03-04 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2021824C3 (en) * | 1970-05-05 | 1980-08-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithic semiconductor circuit |
US3816758A (en) * | 1971-04-14 | 1974-06-11 | Ibm | Digital logic circuit |
DE2356301C3 (en) * | 1973-11-10 | 1982-03-11 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithically integrated logic circuit |
-
1976
- 1976-03-25 DE DE19762612666 patent/DE2612666C2/en not_active Expired
-
1977
- 1977-02-01 FR FR7703513A patent/FR2345859A1/en active Granted
- 1977-02-03 JP JP1031977A patent/JPS52117036A/en active Pending
- 1977-03-02 GB GB870077A patent/GB1569800A/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4924329A (en) * | 1972-05-11 | 1974-03-04 |
Also Published As
Publication number | Publication date |
---|---|
GB1569800A (en) | 1980-06-18 |
FR2345859B1 (en) | 1980-02-08 |
DE2612666C2 (en) | 1982-11-18 |
DE2612666A1 (en) | 1977-09-29 |
FR2345859A1 (en) | 1977-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5384433A (en) | Semiconductor memory | |
JPS53124085A (en) | Semiconductor memory | |
JPS544539A (en) | Semiconductor memory | |
JPS5350944A (en) | Mos semiconductor memory | |
JPS52134385A (en) | Semiconductor memory | |
JPS5391685A (en) | Semiconductor | |
JPS535937A (en) | Firsttin firsttout memory | |
JPS5378187A (en) | Semiconductor | |
GB2004432B (en) | Semiconductor memory | |
JPS5396782A (en) | Semiconductor memory | |
JPS52142929A (en) | Memory | |
JPS5339892A (en) | Semiconductor memory | |
JPS5370684A (en) | Semiconductor | |
JPS5426672A (en) | Semiconductor memory | |
JPS5335336A (en) | Memory | |
GB1541969A (en) | Semiconductor memory device | |
JPS5317038A (en) | Memory | |
JPS52117036A (en) | Semiconductor memory | |
JPS5385183A (en) | Semiconductor | |
JPS5383580A (en) | Semiconductor | |
JPS52147934A (en) | Memory | |
JPS53105986A (en) | Semiconductor memory | |
JPS5328343A (en) | Memory | |
JPS5315719A (en) | Memory | |
JPS5323274A (en) | Semiconductor |