JPS52106639A - Semiconductor memory and test for it - Google Patents

Semiconductor memory and test for it

Info

Publication number
JPS52106639A
JPS52106639A JP2333076A JP2333076A JPS52106639A JP S52106639 A JPS52106639 A JP S52106639A JP 2333076 A JP2333076 A JP 2333076A JP 2333076 A JP2333076 A JP 2333076A JP S52106639 A JPS52106639 A JP S52106639A
Authority
JP
Japan
Prior art keywords
test
semiconductor memory
disconnection
fault
giving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2333076A
Other languages
Japanese (ja)
Inventor
Norimasa Yasui
Minoru Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2333076A priority Critical patent/JPS52106639A/en
Publication of JPS52106639A publication Critical patent/JPS52106639A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To test ROM simply and rapidly by giving the capability to detect the fault of disconnection and short.
JP2333076A 1976-03-05 1976-03-05 Semiconductor memory and test for it Pending JPS52106639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2333076A JPS52106639A (en) 1976-03-05 1976-03-05 Semiconductor memory and test for it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2333076A JPS52106639A (en) 1976-03-05 1976-03-05 Semiconductor memory and test for it

Publications (1)

Publication Number Publication Date
JPS52106639A true JPS52106639A (en) 1977-09-07

Family

ID=12107560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2333076A Pending JPS52106639A (en) 1976-03-05 1976-03-05 Semiconductor memory and test for it

Country Status (1)

Country Link
JP (1) JPS52106639A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63125986A (en) * 1986-11-14 1988-05-30 松下電器産業株式会社 Inspection of thin film transistor array
JPH01129296A (en) * 1987-11-13 1989-05-22 Matsushita Electric Ind Co Ltd Inspection of active matrix array
JPH03181096A (en) * 1989-12-08 1991-08-07 Mitsubishi Electric Corp Non-volatile semiconductor memory device
JPH03181097A (en) * 1989-12-08 1991-08-07 Mitsubishi Electric Corp Non-volatile memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4925821A (en) * 1972-07-04 1974-03-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4925821A (en) * 1972-07-04 1974-03-07

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63125986A (en) * 1986-11-14 1988-05-30 松下電器産業株式会社 Inspection of thin film transistor array
JPH01129296A (en) * 1987-11-13 1989-05-22 Matsushita Electric Ind Co Ltd Inspection of active matrix array
JPH03181096A (en) * 1989-12-08 1991-08-07 Mitsubishi Electric Corp Non-volatile semiconductor memory device
JPH03181097A (en) * 1989-12-08 1991-08-07 Mitsubishi Electric Corp Non-volatile memory device

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