JPS52106284A - Semiconductor laser unit - Google Patents

Semiconductor laser unit

Info

Publication number
JPS52106284A
JPS52106284A JP2223076A JP2223076A JPS52106284A JP S52106284 A JPS52106284 A JP S52106284A JP 2223076 A JP2223076 A JP 2223076A JP 2223076 A JP2223076 A JP 2223076A JP S52106284 A JPS52106284 A JP S52106284A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser unit
gaas
diffusion
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2223076A
Other languages
Japanese (ja)
Other versions
JPS542831B2 (en
Inventor
Hitoshi Kawaguchi
Goji Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2223076A priority Critical patent/JPS52106284A/en
Publication of JPS52106284A publication Critical patent/JPS52106284A/en
Publication of JPS542831B2 publication Critical patent/JPS542831B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain double junction stripe laser which can prevent the density reduction due to diffusion of excess carrier as well as minimize threshold current, by enclosing electron and light through sandwich structure holding GaAs active region between A GaAs layers.
COPYRIGHT: (C)1977,JPO&Japio
JP2223076A 1976-03-03 1976-03-03 Semiconductor laser unit Granted JPS52106284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2223076A JPS52106284A (en) 1976-03-03 1976-03-03 Semiconductor laser unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2223076A JPS52106284A (en) 1976-03-03 1976-03-03 Semiconductor laser unit

Publications (2)

Publication Number Publication Date
JPS52106284A true JPS52106284A (en) 1977-09-06
JPS542831B2 JPS542831B2 (en) 1979-02-14

Family

ID=12076983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2223076A Granted JPS52106284A (en) 1976-03-03 1976-03-03 Semiconductor laser unit

Country Status (1)

Country Link
JP (1) JPS52106284A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967684A (en) * 1982-09-16 1984-04-17 シ−メンス・アクチエンゲゼルシヤフト Laser diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5071281A (en) * 1973-10-26 1975-06-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5071281A (en) * 1973-10-26 1975-06-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967684A (en) * 1982-09-16 1984-04-17 シ−メンス・アクチエンゲゼルシヤフト Laser diode

Also Published As

Publication number Publication date
JPS542831B2 (en) 1979-02-14

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