JPS52105786A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52105786A JPS52105786A JP2197176A JP2197176A JPS52105786A JP S52105786 A JPS52105786 A JP S52105786A JP 2197176 A JP2197176 A JP 2197176A JP 2197176 A JP2197176 A JP 2197176A JP S52105786 A JPS52105786 A JP S52105786A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor device
- zones
- lights
- establishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a device of I<2>L structure much applicable for lights and radiation rays, by establishing the N type zone within the P type zones after successively composing the P<+> and P type zones on the N type semiconductor layer surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2197176A JPS52105786A (en) | 1976-03-01 | 1976-03-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2197176A JPS52105786A (en) | 1976-03-01 | 1976-03-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52105786A true JPS52105786A (en) | 1977-09-05 |
Family
ID=12069915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2197176A Pending JPS52105786A (en) | 1976-03-01 | 1976-03-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52105786A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4736785A (en) * | 1971-03-20 | 1972-11-29 |
-
1976
- 1976-03-01 JP JP2197176A patent/JPS52105786A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4736785A (en) * | 1971-03-20 | 1972-11-29 |
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