JPS52100873A - Measurement of damage distribution by ion implantation - Google Patents
Measurement of damage distribution by ion implantationInfo
- Publication number
- JPS52100873A JPS52100873A JP1764376A JP1764376A JPS52100873A JP S52100873 A JPS52100873 A JP S52100873A JP 1764376 A JP1764376 A JP 1764376A JP 1764376 A JP1764376 A JP 1764376A JP S52100873 A JPS52100873 A JP S52100873A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- measurement
- damage distribution
- distribution
- damage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To measure conveniently but accurately damage distribution in crystals by ion implantation techinique with specified etching solution.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1764376A JPS5824942B2 (en) | 1976-02-19 | 1976-02-19 | Damage distribution measurement method due to ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1764376A JPS5824942B2 (en) | 1976-02-19 | 1976-02-19 | Damage distribution measurement method due to ion implantation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52100873A true JPS52100873A (en) | 1977-08-24 |
JPS5824942B2 JPS5824942B2 (en) | 1983-05-24 |
Family
ID=11949530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1764376A Expired JPS5824942B2 (en) | 1976-02-19 | 1976-02-19 | Damage distribution measurement method due to ion implantation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5824942B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104835755A (en) * | 2015-04-29 | 2015-08-12 | 上海华力微电子有限公司 | Method for testing ion implantation damage depth |
CN111739815A (en) * | 2020-08-21 | 2020-10-02 | 西安奕斯伟硅片技术有限公司 | Method and system for measuring wafer damage depth and computer storage medium |
-
1976
- 1976-02-19 JP JP1764376A patent/JPS5824942B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104835755A (en) * | 2015-04-29 | 2015-08-12 | 上海华力微电子有限公司 | Method for testing ion implantation damage depth |
CN111739815A (en) * | 2020-08-21 | 2020-10-02 | 西安奕斯伟硅片技术有限公司 | Method and system for measuring wafer damage depth and computer storage medium |
Also Published As
Publication number | Publication date |
---|---|
JPS5824942B2 (en) | 1983-05-24 |
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