JPS52100873A - Measurement of damage distribution by ion implantation - Google Patents

Measurement of damage distribution by ion implantation

Info

Publication number
JPS52100873A
JPS52100873A JP1764376A JP1764376A JPS52100873A JP S52100873 A JPS52100873 A JP S52100873A JP 1764376 A JP1764376 A JP 1764376A JP 1764376 A JP1764376 A JP 1764376A JP S52100873 A JPS52100873 A JP S52100873A
Authority
JP
Japan
Prior art keywords
ion implantation
measurement
damage distribution
distribution
damage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1764376A
Other languages
Japanese (ja)
Other versions
JPS5824942B2 (en
Inventor
Masaharu Yamamoto
Takeshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1764376A priority Critical patent/JPS5824942B2/en
Publication of JPS52100873A publication Critical patent/JPS52100873A/en
Publication of JPS5824942B2 publication Critical patent/JPS5824942B2/en
Expired legal-status Critical Current

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Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure conveniently but accurately damage distribution in crystals by ion implantation techinique with specified etching solution.
COPYRIGHT: (C)1977,JPO&Japio
JP1764376A 1976-02-19 1976-02-19 Damage distribution measurement method due to ion implantation Expired JPS5824942B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1764376A JPS5824942B2 (en) 1976-02-19 1976-02-19 Damage distribution measurement method due to ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1764376A JPS5824942B2 (en) 1976-02-19 1976-02-19 Damage distribution measurement method due to ion implantation

Publications (2)

Publication Number Publication Date
JPS52100873A true JPS52100873A (en) 1977-08-24
JPS5824942B2 JPS5824942B2 (en) 1983-05-24

Family

ID=11949530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1764376A Expired JPS5824942B2 (en) 1976-02-19 1976-02-19 Damage distribution measurement method due to ion implantation

Country Status (1)

Country Link
JP (1) JPS5824942B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835755A (en) * 2015-04-29 2015-08-12 上海华力微电子有限公司 Method for testing ion implantation damage depth
CN111739815A (en) * 2020-08-21 2020-10-02 西安奕斯伟硅片技术有限公司 Method and system for measuring wafer damage depth and computer storage medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835755A (en) * 2015-04-29 2015-08-12 上海华力微电子有限公司 Method for testing ion implantation damage depth
CN111739815A (en) * 2020-08-21 2020-10-02 西安奕斯伟硅片技术有限公司 Method and system for measuring wafer damage depth and computer storage medium

Also Published As

Publication number Publication date
JPS5824942B2 (en) 1983-05-24

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