JPS5158078A - Ic memori - Google Patents
Ic memoriInfo
- Publication number
- JPS5158078A JPS5158078A JP11420675A JP11420675A JPS5158078A JP S5158078 A JPS5158078 A JP S5158078A JP 11420675 A JP11420675 A JP 11420675A JP 11420675 A JP11420675 A JP 11420675A JP S5158078 A JPS5158078 A JP S5158078A
- Authority
- JP
- Japan
- Prior art keywords
- memori
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742445078 DE2445078C3 (en) | 1974-09-20 | Electronic memory produced using integrated technology | |
DE19752505821 DE2505821C3 (en) | 1975-02-12 | 1975-02-12 | Method for operating an electronic memory produced using integrated technology |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5158078A true JPS5158078A (en) | 1976-05-21 |
Family
ID=25767729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11420675A Pending JPS5158078A (en) | 1974-09-20 | 1975-09-20 | Ic memori |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5158078A (en) |
BE (1) | BE833630A (en) |
CH (1) | CH607234A5 (en) |
DK (1) | DK423175A (en) |
FR (1) | FR2285678A1 (en) |
GB (1) | GB1517926A (en) |
IT (1) | IT1042649B (en) |
NL (1) | NL7510941A (en) |
SE (1) | SE7510482L (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654693A (en) * | 1979-10-05 | 1981-05-14 | Hitachi Ltd | Programable rom |
JPS6284496A (en) * | 1986-08-25 | 1987-04-17 | Hitachi Ltd | Programmable rom |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4542485A (en) * | 1981-01-14 | 1985-09-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915380A (en) * | 1972-05-18 | 1974-02-09 |
-
1975
- 1975-09-09 GB GB36980/75A patent/GB1517926A/en not_active Expired
- 1975-09-16 FR FR7528358A patent/FR2285678A1/en active Granted
- 1975-09-16 CH CH1198275A patent/CH607234A5/xx not_active IP Right Cessation
- 1975-09-17 NL NL7510941A patent/NL7510941A/en not_active Application Discontinuation
- 1975-09-18 SE SE7510482A patent/SE7510482L/en unknown
- 1975-09-18 IT IT27363/75A patent/IT1042649B/en active
- 1975-09-19 BE BE160215A patent/BE833630A/en unknown
- 1975-09-19 DK DK423175A patent/DK423175A/en unknown
- 1975-09-20 JP JP11420675A patent/JPS5158078A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915380A (en) * | 1972-05-18 | 1974-02-09 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654693A (en) * | 1979-10-05 | 1981-05-14 | Hitachi Ltd | Programable rom |
JPS6239519B2 (en) * | 1979-10-05 | 1987-08-24 | Hitachi Ltd | |
JPS6284496A (en) * | 1986-08-25 | 1987-04-17 | Hitachi Ltd | Programmable rom |
JPS6259397B2 (en) * | 1986-08-25 | 1987-12-10 | Hitachi Ltd |
Also Published As
Publication number | Publication date |
---|---|
GB1517926A (en) | 1978-07-19 |
FR2285678A1 (en) | 1976-04-16 |
CH607234A5 (en) | 1978-11-30 |
FR2285678B1 (en) | 1979-03-23 |
DK423175A (en) | 1976-03-21 |
BE833630A (en) | 1976-03-19 |
NL7510941A (en) | 1976-03-23 |
SE7510482L (en) | 1976-03-22 |
IT1042649B (en) | 1980-01-30 |
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