JPS51151082A - Manufacturing method of a vertical connection type field effect transi stor - Google Patents
Manufacturing method of a vertical connection type field effect transi storInfo
- Publication number
- JPS51151082A JPS51151082A JP7591475A JP7591475A JPS51151082A JP S51151082 A JPS51151082 A JP S51151082A JP 7591475 A JP7591475 A JP 7591475A JP 7591475 A JP7591475 A JP 7591475A JP S51151082 A JPS51151082 A JP S51151082A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- field effect
- type field
- connection type
- vertical connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To be able to surely control the form with the high impurities density of the channel, not to use the gate contact spreading process from the epitaxial surface, and to make the gate electrode as the same height, and, at the same time, the manufacturing method of the vertical EFT of the easy manufacturing.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7591475A JPS51151082A (en) | 1975-06-20 | 1975-06-20 | Manufacturing method of a vertical connection type field effect transi stor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7591475A JPS51151082A (en) | 1975-06-20 | 1975-06-20 | Manufacturing method of a vertical connection type field effect transi stor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51151082A true JPS51151082A (en) | 1976-12-25 |
JPS565073B2 JPS565073B2 (en) | 1981-02-03 |
Family
ID=13590058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7591475A Granted JPS51151082A (en) | 1975-06-20 | 1975-06-20 | Manufacturing method of a vertical connection type field effect transi stor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51151082A (en) |
-
1975
- 1975-06-20 JP JP7591475A patent/JPS51151082A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS565073B2 (en) | 1981-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5240062A (en) | Process for production of semiconductor devices | |
JPS5228887A (en) | Semiconductive emitter device | |
JPS51151082A (en) | Manufacturing method of a vertical connection type field effect transi stor | |
JPS5315773A (en) | Mis type semiconductor device and its production | |
JPS5230389A (en) | Thyristor | |
JPS5274280A (en) | Semiconductor device and its production | |
JPS5228879A (en) | Semiconductor device and method for its production | |
JPS51140199A (en) | Crystal working process | |
JPS53142877A (en) | Manufacture for compound semiconductor device | |
JPS543481A (en) | Field effect type semiconductor switching element | |
JPS5244576A (en) | Process for production of semiconductor device | |
JPS5229178A (en) | Vertical field effect semiconductive device | |
JPS51135381A (en) | Semiconductor device and its manufacturing method | |
JPS5270763A (en) | Electrode formation method | |
JPS5240986A (en) | Process for production of semiconductor element | |
JPS5227281A (en) | Semiconductor manufacturing process | |
JPS524498A (en) | Method for the production of chromium oxide | |
JPS5325372A (en) | Mos ty pe semiconductor device | |
JPS52100878A (en) | Field effect transistor | |
JPS5310896A (en) | Cdse humidity sensitive material and its manufacturing process | |
JPS5247674A (en) | Process for production of semiconducto r device | |
JPS5410683A (en) | Production of smiconductor device | |
JPS5253675A (en) | Production of semiconductor device | |
JPS5228867A (en) | Process for formation of pn junction | |
JPS52122086A (en) | Insulated gate type field effect rransistor |