JPS51142272A - Method of manufacturing a compound-semiconductor device having muti-la yer structure - Google Patents

Method of manufacturing a compound-semiconductor device having muti-la yer structure

Info

Publication number
JPS51142272A
JPS51142272A JP6723375A JP6723375A JPS51142272A JP S51142272 A JPS51142272 A JP S51142272A JP 6723375 A JP6723375 A JP 6723375A JP 6723375 A JP6723375 A JP 6723375A JP S51142272 A JPS51142272 A JP S51142272A
Authority
JP
Japan
Prior art keywords
yer
muti
compound
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6723375A
Other languages
Japanese (ja)
Inventor
Takao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP6723375A priority Critical patent/JPS51142272A/en
Publication of JPS51142272A publication Critical patent/JPS51142272A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain a multi-layer growth layer easily by dissolving impurties in gaseous phase. which are easy to evavoparate, into the solution in which impurities that are difficult to evavoparate is melted, and by accomplishing liquidphase growing.
COPYRIGHT: (C)1976,JPO&Japio
JP6723375A 1975-06-03 1975-06-03 Method of manufacturing a compound-semiconductor device having muti-la yer structure Pending JPS51142272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6723375A JPS51142272A (en) 1975-06-03 1975-06-03 Method of manufacturing a compound-semiconductor device having muti-la yer structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6723375A JPS51142272A (en) 1975-06-03 1975-06-03 Method of manufacturing a compound-semiconductor device having muti-la yer structure

Publications (1)

Publication Number Publication Date
JPS51142272A true JPS51142272A (en) 1976-12-07

Family

ID=13338980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6723375A Pending JPS51142272A (en) 1975-06-03 1975-06-03 Method of manufacturing a compound-semiconductor device having muti-la yer structure

Country Status (1)

Country Link
JP (1) JPS51142272A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63143579U (en) * 1987-03-12 1988-09-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63143579U (en) * 1987-03-12 1988-09-21

Similar Documents

Publication Publication Date Title
JPS5347765A (en) Semiconductor crystal growth method
JPS5381899A (en) Manufacturing method of tritium
JPS51142272A (en) Method of manufacturing a compound-semiconductor device having muti-la yer structure
JPS5282090A (en) Apparatus and manufacture for superconductor
JPS5215498A (en) Process for production of granular corrundum
JPS51125697A (en) The recovery of bismuth
JPS5227734A (en) Process for preparation of 2,6-dichloro- 4-methylphenol
JPS5323926A (en) Recovery of trifluoromethanesulfonic acid
JPS52134898A (en) Gap single crystal with low dislocation density
JPS52138095A (en) Growth of sapphire single crystal
JPS52111589A (en) Purification of antibiotics
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS51111478A (en) A method of producing semiconductor crystal
JPS52117062A (en) Liquid phase epitaxial growth process
JPS5333569A (en) Method of reducing lattice defects of single crystal
JPS5210207A (en) Process for preparation of high purity pulenol
JPS5237159A (en) Magic mirror and production method of same
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5348669A (en) Growth method of semiconductor crystal
JPS5211169A (en) Pure water producing apparatus
JPS51117186A (en) Method of manufacture of single crystals of high meltng point meterial
JPS52155189A (en) Multiple layer crystal growth
JPS5366161A (en) Cutting of semiconductor crystal
JPS524498A (en) Method for the production of chromium oxide
JPS5358782A (en) Semiconductor device