JPS51140572A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51140572A JPS51140572A JP6578375A JP6578375A JPS51140572A JP S51140572 A JPS51140572 A JP S51140572A JP 6578375 A JP6578375 A JP 6578375A JP 6578375 A JP6578375 A JP 6578375A JP S51140572 A JPS51140572 A JP S51140572A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- hfe
- fluctuation
- decrease
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To decrease a fluctuation in hFE (D.C. current gain) value of each element during producing a semiconductor device protected by the coating of a silicon nitride film.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6578375A JPS51140572A (en) | 1975-05-30 | 1975-05-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6578375A JPS51140572A (en) | 1975-05-30 | 1975-05-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51140572A true JPS51140572A (en) | 1976-12-03 |
Family
ID=13296967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6578375A Pending JPS51140572A (en) | 1975-05-30 | 1975-05-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51140572A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5550639A (en) * | 1978-10-09 | 1980-04-12 | Toshiba Corp | Preparation of semiconductor device |
JPS5650534A (en) * | 1979-10-02 | 1981-05-07 | Mitsubishi Electric Corp | Semiconductor device |
JPS56162854A (en) * | 1980-05-20 | 1981-12-15 | Nec Corp | Semiconductor integrated circuit device |
JPS57183057A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Semiconductor device and manufacture thereof |
-
1975
- 1975-05-30 JP JP6578375A patent/JPS51140572A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5550639A (en) * | 1978-10-09 | 1980-04-12 | Toshiba Corp | Preparation of semiconductor device |
JPS6145860B2 (en) * | 1978-10-09 | 1986-10-09 | Tokyo Shibaura Electric Co | |
JPS5650534A (en) * | 1979-10-02 | 1981-05-07 | Mitsubishi Electric Corp | Semiconductor device |
JPS56162854A (en) * | 1980-05-20 | 1981-12-15 | Nec Corp | Semiconductor integrated circuit device |
JPS57183057A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Semiconductor device and manufacture thereof |
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