JPS51129882A - Process for liquid phase epitaxial growth - Google Patents
Process for liquid phase epitaxial growthInfo
- Publication number
- JPS51129882A JPS51129882A JP5387675A JP5387675A JPS51129882A JP S51129882 A JPS51129882 A JP S51129882A JP 5387675 A JP5387675 A JP 5387675A JP 5387675 A JP5387675 A JP 5387675A JP S51129882 A JPS51129882 A JP S51129882A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- liquid phase
- phase epitaxial
- iiiw
- scratches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: In a process for liquid epitaxial growth of a semiconductor made of IIIW V groups compounds by use of a rotary boat, surface of the epitaxial layer is prevented from scratches and pollution with impurities in gas by pushing out melt.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5387675A JPS51129882A (en) | 1975-05-07 | 1975-05-07 | Process for liquid phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5387675A JPS51129882A (en) | 1975-05-07 | 1975-05-07 | Process for liquid phase epitaxial growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51129882A true JPS51129882A (en) | 1976-11-11 |
JPS5318465B2 JPS5318465B2 (en) | 1978-06-15 |
Family
ID=12954936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5387675A Granted JPS51129882A (en) | 1975-05-07 | 1975-05-07 | Process for liquid phase epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51129882A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5171882A (en) * | 1974-12-20 | 1976-06-22 | Nippon Telegraph & Telephone |
-
1975
- 1975-05-07 JP JP5387675A patent/JPS51129882A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5171882A (en) * | 1974-12-20 | 1976-06-22 | Nippon Telegraph & Telephone |
Also Published As
Publication number | Publication date |
---|---|
JPS5318465B2 (en) | 1978-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5320767A (en) | X-ray mask supporting underlayer and its production | |
JPS5272399A (en) | Method and apparatus for growth of single crystals of al2o3 from gas p hase | |
JPS51129882A (en) | Process for liquid phase epitaxial growth | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS5286059A (en) | Process for production and apparatus used for process of semiconductor device | |
JPS5229171A (en) | Process for crowing semiconductor crystal | |
JPS53105371A (en) | Crystal growing method for potassium arsenide | |
JPS52117062A (en) | Liquid phase epitaxial growth process | |
JPS5286058A (en) | Liquid phase epitaxial growth | |
JPS51114383A (en) | Liquid phase epitaxial crystal growth | |
JPS5384457A (en) | Liquid-phase epitaxial growth method | |
JPS51111057A (en) | Crystal growing device | |
JPS5226847A (en) | Layer forming method for liquid crystal molecule orientation and devic e therefor | |
JPS52135264A (en) | Liquid phase epitaxial growth method | |
JPS5259568A (en) | Liquid phase epitaxial growth | |
JPS5216972A (en) | Epitachisial growing method of semic-conductor of iii-v family chemica l compound | |
JPS5358978A (en) | Growing method for crystal | |
JPS51123781A (en) | A liquid phase crystal growth apparatus | |
JPS51140561A (en) | Liquid phase epitaxial growing method | |
JPS51126037A (en) | Semiconductor crystal growth method | |
JPS52155058A (en) | Film formation method | |
JPS53125276A (en) | Liquid phase epitaxial growth apparatus | |
JPS5316391A (en) | Method and apparatus for growing single crystalline alumina at gaseous phase | |
JPS5234754A (en) | Process for the orientation of a liquid crystal | |
JPS52146554A (en) | Multilayer epitaxial growth and its apparatus |