JPS509156B1 - - Google Patents
Info
- Publication number
- JPS509156B1 JPS509156B1 JP8912970A JP8912970A JPS509156B1 JP S509156 B1 JPS509156 B1 JP S509156B1 JP 8912970 A JP8912970 A JP 8912970A JP 8912970 A JP8912970 A JP 8912970A JP S509156 B1 JPS509156 B1 JP S509156B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8912970A JPS509156B1 (en) | 1970-10-09 | 1970-10-09 | |
GB4508071A GB1367325A (en) | 1970-10-09 | 1971-09-28 | Negative resistance semiconductor element |
AU33959/71A AU434674B2 (en) | 1970-10-09 | 1971-09-28 | Negative resistance semiconductor element |
CA124099A CA924420A (en) | 1970-10-09 | 1971-09-30 | Negative resistance semiconductor element |
DE19712149761 DE2149761C3 (en) | 1970-10-09 | 1971-10-05 | Thyristor with isolated field control electrode |
NL7113825A NL7113825A (en) | 1970-10-09 | 1971-10-08 | |
FR7136321A FR2110326B1 (en) | 1970-10-09 | 1971-10-08 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8912970A JPS509156B1 (en) | 1970-10-09 | 1970-10-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS509156B1 true JPS509156B1 (en) | 1975-04-10 |
Family
ID=13962261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8912970A Pending JPS509156B1 (en) | 1970-10-09 | 1970-10-09 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS509156B1 (en) |
CA (1) | CA924420A (en) |
FR (1) | FR2110326B1 (en) |
GB (1) | GB1367325A (en) |
NL (1) | NL7113825A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007536737A (en) * | 2004-05-06 | 2007-12-13 | マイクロン テクノロジー, インク. | Silicon-on-insulator read-write nonvolatile memory with lateral thyristor and trapping layer |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4364073A (en) | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
JPS61180472A (en) * | 1985-02-05 | 1986-08-13 | Mitsubishi Electric Corp | Semiconductor device |
US6229161B1 (en) | 1998-06-05 | 2001-05-08 | Stanford University | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
US6804162B1 (en) | 2001-04-05 | 2004-10-12 | T-Ram, Inc. | Read-modify-write memory using read-or-write banks |
US6583452B1 (en) | 2001-12-17 | 2003-06-24 | T-Ram, Inc. | Thyristor-based device having extended capacitive coupling |
US6832300B2 (en) | 2002-03-20 | 2004-12-14 | Hewlett-Packard Development Company, L.P. | Methods and apparatus for control of asynchronous cache |
US6965129B1 (en) | 2002-11-06 | 2005-11-15 | T-Ram, Inc. | Thyristor-based device having dual control ports |
-
1970
- 1970-10-09 JP JP8912970A patent/JPS509156B1/ja active Pending
-
1971
- 1971-09-28 GB GB4508071A patent/GB1367325A/en not_active Expired
- 1971-09-30 CA CA124099A patent/CA924420A/en not_active Expired
- 1971-10-08 NL NL7113825A patent/NL7113825A/xx not_active Application Discontinuation
- 1971-10-08 FR FR7136321A patent/FR2110326B1/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007536737A (en) * | 2004-05-06 | 2007-12-13 | マイクロン テクノロジー, インク. | Silicon-on-insulator read-write nonvolatile memory with lateral thyristor and trapping layer |
JP4915592B2 (en) * | 2004-05-06 | 2012-04-11 | マイクロン テクノロジー, インク. | Silicon-on-insulator read-write nonvolatile memory with lateral thyristor and trapping layer |
Also Published As
Publication number | Publication date |
---|---|
GB1367325A (en) | 1974-09-18 |
DE2149761B2 (en) | 1976-08-05 |
FR2110326A1 (en) | 1972-06-02 |
DE2149761A1 (en) | 1972-04-13 |
CA924420A (en) | 1973-04-10 |
AU3395971A (en) | 1973-04-05 |
FR2110326B1 (en) | 1977-04-22 |
NL7113825A (en) | 1972-04-11 |