JPS5081481A - - Google Patents
Info
- Publication number
- JPS5081481A JPS5081481A JP48130413A JP13041373A JPS5081481A JP S5081481 A JPS5081481 A JP S5081481A JP 48130413 A JP48130413 A JP 48130413A JP 13041373 A JP13041373 A JP 13041373A JP S5081481 A JPS5081481 A JP S5081481A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48130413A JPS5081481A (en) | 1973-11-20 | 1973-11-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48130413A JPS5081481A (en) | 1973-11-20 | 1973-11-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5081481A true JPS5081481A (en) | 1975-07-02 |
Family
ID=15033656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48130413A Pending JPS5081481A (en) | 1973-11-20 | 1973-11-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5081481A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128689A (en) * | 1978-03-27 | 1979-10-05 | Intel Corp | Method of forming contact area between polycrystal sllicon layers |
| JPS56157369U (en) * | 1980-04-25 | 1981-11-24 | ||
| JPS57109354A (en) * | 1980-12-26 | 1982-07-07 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPH0590289A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |
-
1973
- 1973-11-20 JP JP48130413A patent/JPS5081481A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128689A (en) * | 1978-03-27 | 1979-10-05 | Intel Corp | Method of forming contact area between polycrystal sllicon layers |
| JPS56157369U (en) * | 1980-04-25 | 1981-11-24 | ||
| JPS57109354A (en) * | 1980-12-26 | 1982-07-07 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPH0590289A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |