JPS503586A - - Google Patents
Info
- Publication number
- JPS503586A JPS503586A JP3894674A JP3894674A JPS503586A JP S503586 A JPS503586 A JP S503586A JP 3894674 A JP3894674 A JP 3894674A JP 3894674 A JP3894674 A JP 3894674A JP S503586 A JPS503586 A JP S503586A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7313505A FR2225842B1 (en) | 1973-04-13 | 1973-04-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS503586A true JPS503586A (en) | 1975-01-14 |
Family
ID=9117952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3894674A Pending JPS503586A (en) | 1973-04-13 | 1974-04-08 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS503586A (en) |
| DE (1) | DE2417933A1 (en) |
| FR (1) | FR2225842B1 (en) |
| GB (1) | GB1468572A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225673U (en) * | 1975-08-13 | 1977-02-23 | ||
| JPS53148001U (en) * | 1977-04-25 | 1978-11-21 | ||
| JPS552435U (en) * | 1978-06-23 | 1980-01-09 | ||
| JPS58195689U (en) * | 1982-06-24 | 1983-12-26 | ジェイエスアール株式会社 | Improved cleaning head |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2399740A1 (en) * | 1977-08-02 | 1979-03-02 | Thomson Csf | HETERO-JUNCTION AVALANCHE DIODE, AND OSCILLATOR IN "TRANSIT TIME" MODE USING SUCH A DIODE |
| DE3725214A1 (en) * | 1986-09-27 | 1988-03-31 | Licentia Gmbh | IMPATT DIODE |
| CN109637930B (en) * | 2018-11-21 | 2019-11-15 | 温州大学 | Light-operated IMPATT diode of GaN/Si hetero-junctions lateral type and preparation method thereof |
-
1973
- 1973-04-13 FR FR7313505A patent/FR2225842B1/fr not_active Expired
-
1974
- 1974-04-08 JP JP3894674A patent/JPS503586A/ja active Pending
- 1974-04-09 GB GB1578074A patent/GB1468572A/en not_active Expired
- 1974-04-11 DE DE19742417933 patent/DE2417933A1/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225673U (en) * | 1975-08-13 | 1977-02-23 | ||
| JPS53148001U (en) * | 1977-04-25 | 1978-11-21 | ||
| JPS552435U (en) * | 1978-06-23 | 1980-01-09 | ||
| JPS58195689U (en) * | 1982-06-24 | 1983-12-26 | ジェイエスアール株式会社 | Improved cleaning head |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2417933A1 (en) | 1974-10-24 |
| FR2225842A1 (en) | 1974-11-08 |
| GB1468572A (en) | 1977-03-30 |
| FR2225842B1 (en) | 1977-09-02 |