JPS50159288A - - Google Patents
Info
- Publication number
- JPS50159288A JPS50159288A JP49066733A JP6673374A JPS50159288A JP S50159288 A JPS50159288 A JP S50159288A JP 49066733 A JP49066733 A JP 49066733A JP 6673374 A JP6673374 A JP 6673374A JP S50159288 A JPS50159288 A JP S50159288A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/108—Melt back
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/955—Melt-back
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49066733A JPS50159288A (ja) | 1974-06-11 | 1974-06-11 | |
US05/584,405 US3983510A (en) | 1974-06-11 | 1975-06-06 | Semiconductor double heterostructure laser device and method of making the same |
GB2508175A GB1476118A (en) | 1974-06-11 | 1975-06-11 | Semiconductor laser device and method of manufacture |
DE2526118A DE2526118C3 (de) | 1974-06-11 | 1975-06-11 | Verfahren zur Herstellung von Halbleiterlasern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49066733A JPS50159288A (ja) | 1974-06-11 | 1974-06-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50159288A true JPS50159288A (ja) | 1975-12-23 |
Family
ID=13324370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49066733A Pending JPS50159288A (ja) | 1974-06-11 | 1974-06-11 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3983510A (ja) |
JP (1) | JPS50159288A (ja) |
DE (1) | DE2526118C3 (ja) |
GB (1) | GB1476118A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5324791A (en) * | 1976-08-20 | 1978-03-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
JPS5338280A (en) * | 1976-09-21 | 1978-04-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4121177A (en) * | 1973-05-28 | 1978-10-17 | Hitachi, Ltd. | Semiconductor device and a method of fabricating the same |
US4213805A (en) * | 1973-05-28 | 1980-07-22 | Hitachi, Ltd. | Liquid phase epitaxy method of forming a filimentary laser device |
US4028147A (en) * | 1974-12-06 | 1977-06-07 | Hughes Aircraft Company | Liquid phase epitaxial process for growing semi-insulating GaAs layers |
JPS5286093A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Striped semiconductor laser |
JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
NL7607299A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Injektielaser. |
GB1557072A (en) * | 1976-10-13 | 1979-12-05 | Standard Telephones Cables Ltd | Stripe lears |
US4099305A (en) * | 1977-03-14 | 1978-07-11 | Bell Telephone Laboratories, Incorporated | Fabrication of mesa devices by MBE growth over channeled substrates |
US4194933A (en) * | 1977-05-06 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method for fabricating junction lasers having lateral current confinement |
FR2396419A1 (fr) * | 1977-06-27 | 1979-01-26 | Thomson Csf | Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement |
US4287485A (en) * | 1977-07-18 | 1981-09-01 | Massachusetts Institute Of Technology | GaInAsP/InP Double-heterostructure lasers |
US4190813A (en) * | 1977-12-28 | 1980-02-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
US4215319A (en) * | 1979-01-17 | 1980-07-29 | Rca Corporation | Single filament semiconductor laser |
US4216036A (en) * | 1978-08-28 | 1980-08-05 | Bell Telephone Laboratories, Incorporated | Self-terminating thermal oxidation of Al-containing group III-V compound layers |
US4372791A (en) * | 1979-04-30 | 1983-02-08 | Massachusetts Institute Of Technology | Method for fabricating DH lasers |
US4347486A (en) * | 1979-10-12 | 1982-08-31 | Rca Corporation | Single filament semiconductor laser with large emitting area |
US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
US4427714A (en) * | 1981-01-16 | 1984-01-24 | Pa Management Consultants Limited | Thin films of compounds and alloy compounds of Group III and Group V elements |
DE3105786A1 (de) * | 1981-02-17 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche |
US4421576A (en) * | 1981-09-14 | 1983-12-20 | Rca Corporation | Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate |
US4484332A (en) * | 1982-06-02 | 1984-11-20 | The United States Of America As Represented By The Secretary Of The Air Force | Multiple double heterojunction buried laser device |
US4784722A (en) * | 1985-01-22 | 1988-11-15 | Massachusetts Institute Of Technology | Method forming surface emitting diode laser |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4924084A (ja) * | 1972-06-26 | 1974-03-04 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3833435A (en) * | 1972-09-25 | 1974-09-03 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
-
1974
- 1974-06-11 JP JP49066733A patent/JPS50159288A/ja active Pending
-
1975
- 1975-06-06 US US05/584,405 patent/US3983510A/en not_active Expired - Lifetime
- 1975-06-11 GB GB2508175A patent/GB1476118A/en not_active Expired
- 1975-06-11 DE DE2526118A patent/DE2526118C3/de not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4924084A (ja) * | 1972-06-26 | 1974-03-04 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5324791A (en) * | 1976-08-20 | 1978-03-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
JPS5338280A (en) * | 1976-09-21 | 1978-04-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
Also Published As
Publication number | Publication date |
---|---|
DE2526118A1 (de) | 1976-01-02 |
DE2526118B2 (de) | 1979-05-23 |
US3983510A (en) | 1976-09-28 |
GB1476118A (en) | 1977-06-10 |
DE2526118C3 (de) | 1980-01-24 |