JPS50110272A - - Google Patents
Info
- Publication number
- JPS50110272A JPS50110272A JP1458274A JP1458274A JPS50110272A JP S50110272 A JPS50110272 A JP S50110272A JP 1458274 A JP1458274 A JP 1458274A JP 1458274 A JP1458274 A JP 1458274A JP S50110272 A JPS50110272 A JP S50110272A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1458274A JPS50110272A (de) | 1974-02-06 | 1974-02-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1458274A JPS50110272A (de) | 1974-02-06 | 1974-02-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50110272A true JPS50110272A (de) | 1975-08-30 |
Family
ID=11865144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1458274A Pending JPS50110272A (de) | 1974-02-06 | 1974-02-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS50110272A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52115681A (en) * | 1975-12-10 | 1977-09-28 | Shii Shii Fuan Jiyon | Method of improving crystallinity of semiconductor coating by scanning laser beam |
JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
-
1974
- 1974-02-06 JP JP1458274A patent/JPS50110272A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52115681A (en) * | 1975-12-10 | 1977-09-28 | Shii Shii Fuan Jiyon | Method of improving crystallinity of semiconductor coating by scanning laser beam |
JPS6057232B2 (ja) * | 1975-12-10 | 1985-12-13 | マサチユ−セツツ インステイチユ−ト オブ テクノロジイ | レ−ザビ−ムの走査による半導体皮膜の結晶度の改良方法及び装置 |
JPS52143755A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Laser, zone melting device |
JPS541613B2 (de) * | 1976-05-26 | 1979-01-26 |