JPS49149679U - - Google Patents

Info

Publication number
JPS49149679U
JPS49149679U JP4973373U JP4973373U JPS49149679U JP S49149679 U JPS49149679 U JP S49149679U JP 4973373 U JP4973373 U JP 4973373U JP 4973373 U JP4973373 U JP 4973373U JP S49149679 U JPS49149679 U JP S49149679U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4973373U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4973373U priority Critical patent/JPS49149679U/ja
Publication of JPS49149679U publication Critical patent/JPS49149679U/ja
Pending legal-status Critical Current

Links

JP4973373U 1973-04-27 1973-04-27 Pending JPS49149679U (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4973373U JPS49149679U (ko) 1973-04-27 1973-04-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4973373U JPS49149679U (ko) 1973-04-27 1973-04-27

Publications (1)

Publication Number Publication Date
JPS49149679U true JPS49149679U (ko) 1974-12-25

Family

ID=28191991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4973373U Pending JPS49149679U (ko) 1973-04-27 1973-04-27

Country Status (1)

Country Link
JP (1) JPS49149679U (ko)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036619A (ja) * 1998-05-13 2000-02-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
WO2001091196A1 (fr) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production
JP2002026392A (ja) * 2000-06-30 2002-01-25 Toshiba Corp 半導体発光素子とその製造方法、及び半導体発光装置
JP2002246647A (ja) * 2001-02-16 2002-08-30 Stanley Electric Co Ltd 波長変換型半導体素子
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6818926B2 (en) 1999-07-27 2004-11-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2006253724A (ja) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2007221175A (ja) * 2007-06-04 2007-08-30 Toshiba Corp 半導体発光素子及び半導体発光装置
US7462867B2 (en) 2000-03-14 2008-12-09 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor devices and method for fabricating the same
US7491984B2 (en) 2000-03-31 2009-02-17 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US7560725B2 (en) 1999-12-24 2009-07-14 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1195547A (en) * 1966-11-09 1970-06-17 Siemens Ag Improvements in or relating to Luminescent Diodes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1195547A (en) * 1966-11-09 1970-06-17 Siemens Ag Improvements in or relating to Luminescent Diodes

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036619A (ja) * 1998-05-13 2000-02-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6881651B2 (en) 1999-05-21 2005-04-19 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6818926B2 (en) 1999-07-27 2004-11-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US7560725B2 (en) 1999-12-24 2009-07-14 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US7462867B2 (en) 2000-03-14 2008-12-09 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor devices and method for fabricating the same
US7491984B2 (en) 2000-03-31 2009-02-17 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
WO2001091196A1 (fr) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production
JP2001332762A (ja) * 2000-05-23 2001-11-30 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2002026392A (ja) * 2000-06-30 2002-01-25 Toshiba Corp 半導体発光素子とその製造方法、及び半導体発光装置
JP2002246647A (ja) * 2001-02-16 2002-08-30 Stanley Electric Co Ltd 波長変換型半導体素子
JP2006253724A (ja) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2007221175A (ja) * 2007-06-04 2007-08-30 Toshiba Corp 半導体発光素子及び半導体発光装置
JP4625827B2 (ja) * 2007-06-04 2011-02-02 株式会社東芝 半導体発光素子及び半導体発光装置

Similar Documents

Publication Publication Date Title
AR201758A1 (ko)
AU476761B2 (ko)
AR201235Q (ko)
AR201231Q (ko)
AU474593B2 (ko)
AU474511B2 (ko)
AU474838B2 (ko)
AU465453B2 (ko)
AU471343B2 (ko)
AU465434B2 (ko)
AU450229B2 (ko)
AU476714B2 (ko)
AR201229Q (ko)
AU466283B2 (ko)
AU476696B2 (ko)
AU472848B2 (ko)
AR199451A1 (ko)
AU477823B2 (ko)
AU477824B2 (ko)
AR197627A1 (ko)
AR193950A1 (ko)
AR200256A1 (ko)
AR200885A1 (ko)
AR201432A1 (ko)
AU476873B1 (ko)