JPS49107176A - - Google Patents
Info
- Publication number
- JPS49107176A JPS49107176A JP1708073A JP1708073A JPS49107176A JP S49107176 A JPS49107176 A JP S49107176A JP 1708073 A JP1708073 A JP 1708073A JP 1708073 A JP1708073 A JP 1708073A JP S49107176 A JPS49107176 A JP S49107176A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1708073A JPS49107176A (de) | 1973-02-13 | 1973-02-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1708073A JPS49107176A (de) | 1973-02-13 | 1973-02-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS49107176A true JPS49107176A (de) | 1974-10-11 |
Family
ID=11933986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1708073A Pending JPS49107176A (de) | 1973-02-13 | 1973-02-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS49107176A (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676538A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
| JPS5739582A (en) * | 1980-08-20 | 1982-03-04 | Sumitomo Electric Ind Ltd | Manufacture of inversion type insulated gate field effect transistor |
| JPS62166529A (ja) * | 1986-01-20 | 1987-07-23 | Nec Corp | 薄膜の形成方法 |
-
1973
- 1973-02-13 JP JP1708073A patent/JPS49107176A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676538A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
| JPS5739582A (en) * | 1980-08-20 | 1982-03-04 | Sumitomo Electric Ind Ltd | Manufacture of inversion type insulated gate field effect transistor |
| JPS62166529A (ja) * | 1986-01-20 | 1987-07-23 | Nec Corp | 薄膜の形成方法 |