JPS4880276A - - Google Patents

Info

Publication number
JPS4880276A
JPS4880276A JP1064572A JP1064572A JPS4880276A JP S4880276 A JPS4880276 A JP S4880276A JP 1064572 A JP1064572 A JP 1064572A JP 1064572 A JP1064572 A JP 1064572A JP S4880276 A JPS4880276 A JP S4880276A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1064572A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1064572A priority Critical patent/JPS4880276A/ja
Priority to US05/322,522 priority patent/US3933538A/en
Publication of JPS4880276A publication Critical patent/JPS4880276A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1064572A 1972-01-18 1972-01-28 Pending JPS4880276A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1064572A JPS4880276A (en) 1972-01-28 1972-01-28
US05/322,522 US3933538A (en) 1972-01-18 1973-01-10 Method and apparatus for production of liquid phase epitaxial layers of semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1064572A JPS4880276A (en) 1972-01-28 1972-01-28

Publications (1)

Publication Number Publication Date
JPS4880276A true JPS4880276A (en) 1973-10-27

Family

ID=11755939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1064572A Pending JPS4880276A (en) 1972-01-18 1972-01-28

Country Status (1)

Country Link
JP (1) JPS4880276A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515956A (en) * 1974-07-04 1976-01-19 Nippon Telegraph & Telephone
JPS5166773A (en) * 1974-12-05 1976-06-09 Fujitsu Ltd
JPS51114067A (en) * 1975-04-01 1976-10-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth towards the top of alxga1-xas base
JPS51114384A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial crystal growth
JPS56129319A (en) * 1980-03-14 1981-10-09 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515956A (en) * 1974-07-04 1976-01-19 Nippon Telegraph & Telephone
JPS5638054B2 (en) * 1974-07-04 1981-09-03
JPS5166773A (en) * 1974-12-05 1976-06-09 Fujitsu Ltd
JPS5720703B2 (en) * 1974-12-05 1982-04-30
JPS51114067A (en) * 1975-04-01 1976-10-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth towards the top of alxga1-xas base
JPS51114384A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial crystal growth
JPS5441389B2 (en) * 1975-04-01 1979-12-07
JPS5516530B2 (en) * 1975-04-01 1980-05-02
JPS56129319A (en) * 1980-03-14 1981-10-09 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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