JPS4874190A - - Google Patents
Info
- Publication number
- JPS4874190A JPS4874190A JP47127773A JP12777372A JPS4874190A JP S4874190 A JPS4874190 A JP S4874190A JP 47127773 A JP47127773 A JP 47127773A JP 12777372 A JP12777372 A JP 12777372A JP S4874190 A JPS4874190 A JP S4874190A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1091—Substrate region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21151471A | 1971-12-23 | 1971-12-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4874190A true JPS4874190A (en) | 1973-10-05 |
JPS5547506B2 JPS5547506B2 (en) | 1980-12-01 |
Family
ID=22787238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12777372A Expired JPS5547506B2 (en) | 1971-12-23 | 1972-12-21 |
Country Status (13)
Country | Link |
---|---|
JP (1) | JPS5547506B2 (en) |
AT (1) | AT326741B (en) |
BE (1) | BE793094A (en) |
CA (1) | CA970864A (en) |
CH (1) | CH551693A (en) |
DE (1) | DE2262047C2 (en) |
ES (1) | ES410300A1 (en) |
FR (1) | FR2164912B1 (en) |
GB (1) | GB1385282A (en) |
IL (1) | IL41127A (en) |
IT (1) | IT974046B (en) |
NL (1) | NL7217547A (en) |
SE (1) | SE386045B (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4949579A (en) * | 1972-09-14 | 1974-05-14 | ||
JPS5046033A (en) * | 1973-08-28 | 1975-04-24 | ||
JPS5129844A (en) * | 1974-01-24 | 1976-03-13 | Commissariat Energie Atomique | DENKAKETSU GOSOCHI |
JPS52119830A (en) * | 1976-03-30 | 1977-10-07 | Philips Nv | Charge coupled circuit disposition and device |
JPS537121A (en) * | 1976-07-09 | 1978-01-23 | Toshiba Corp | Electric charge transfer unit |
JPS5726481A (en) * | 1980-07-23 | 1982-02-12 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60173239A (en) * | 1984-02-16 | 1985-09-06 | 日鐵建材工業株式会社 | Deck plate for synthetic floor |
EP0246287A4 (en) * | 1985-11-26 | 1990-12-27 | Jabali Pty. Ltd. | Photo-electric imaging device |
EP0950264A4 (en) * | 1996-11-01 | 2000-04-26 | Lawrence Berkeley Lab | Low-resistivity photon-transparent window attached to photo-sensitive silicon detector |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3700932A (en) * | 1970-02-16 | 1972-10-24 | Bell Telephone Labor Inc | Charge coupled devices |
-
0
- BE BE793094D patent/BE793094A/en not_active IP Right Cessation
-
1972
- 1972-07-06 CA CA146,498A patent/CA970864A/en not_active Expired
- 1972-12-02 ES ES410300A patent/ES410300A1/en not_active Expired
- 1972-12-13 IT IT54683/72A patent/IT974046B/en active
- 1972-12-13 SE SE7216277A patent/SE386045B/en unknown
- 1972-12-19 DE DE2262047A patent/DE2262047C2/en not_active Expired
- 1972-12-20 IL IL41127A patent/IL41127A/en unknown
- 1972-12-21 GB GB5901672A patent/GB1385282A/en not_active Expired
- 1972-12-21 JP JP12777372A patent/JPS5547506B2/ja not_active Expired
- 1972-12-22 CH CH1882672A patent/CH551693A/en not_active IP Right Cessation
- 1972-12-22 FR FR7246007A patent/FR2164912B1/fr not_active Expired
- 1972-12-22 NL NL7217547A patent/NL7217547A/xx not_active Application Discontinuation
- 1972-12-22 AT AT1099772A patent/AT326741B/en not_active IP Right Cessation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4949579A (en) * | 1972-09-14 | 1974-05-14 | ||
JPS5046033A (en) * | 1973-08-28 | 1975-04-24 | ||
JPS5129844A (en) * | 1974-01-24 | 1976-03-13 | Commissariat Energie Atomique | DENKAKETSU GOSOCHI |
JPS5921183B2 (en) * | 1974-01-24 | 1984-05-18 | コミツサリア タ レネルギ− アトミ−ク | charge coupled device |
JPS52119830A (en) * | 1976-03-30 | 1977-10-07 | Philips Nv | Charge coupled circuit disposition and device |
JPS5928110B2 (en) * | 1976-03-30 | 1984-07-10 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Infrared image sensor circuit layout |
JPS537121A (en) * | 1976-07-09 | 1978-01-23 | Toshiba Corp | Electric charge transfer unit |
JPS5755268B2 (en) * | 1976-07-09 | 1982-11-22 | ||
JPS5726481A (en) * | 1980-07-23 | 1982-02-12 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
Also Published As
Publication number | Publication date |
---|---|
GB1385282A (en) | 1975-02-26 |
IT974046B (en) | 1974-06-20 |
SE386045B (en) | 1976-07-26 |
ATA1099772A (en) | 1975-03-15 |
JPS5547506B2 (en) | 1980-12-01 |
NL7217547A (en) | 1973-06-26 |
DE2262047A1 (en) | 1973-07-05 |
FR2164912A1 (en) | 1973-08-03 |
IL41127A0 (en) | 1973-02-28 |
DE2262047C2 (en) | 1983-03-17 |
CH551693A (en) | 1974-07-15 |
BE793094A (en) | 1973-04-16 |
ES410300A1 (en) | 1975-12-01 |
IL41127A (en) | 1976-03-31 |
CA970864A (en) | 1975-07-08 |
FR2164912B1 (en) | 1977-04-08 |
AT326741B (en) | 1975-12-29 |