JPS4826077A - - Google Patents
Info
- Publication number
- JPS4826077A JPS4826077A JP5903071A JP5903071A JPS4826077A JP S4826077 A JPS4826077 A JP S4826077A JP 5903071 A JP5903071 A JP 5903071A JP 5903071 A JP5903071 A JP 5903071A JP S4826077 A JPS4826077 A JP S4826077A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5903071A JPS4826077A (ja) | 1971-08-06 | 1971-08-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5903071A JPS4826077A (ja) | 1971-08-06 | 1971-08-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4826077A true JPS4826077A (ja) | 1973-04-05 |
Family
ID=13101468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5903071A Pending JPS4826077A (ja) | 1971-08-06 | 1971-08-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4826077A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830156A (ja) * | 1981-08-17 | 1983-02-22 | Nec Corp | 半導体集積回路 |
JPS59217359A (ja) * | 1983-05-26 | 1984-12-07 | Hitachi Ltd | 高耐圧プレ−ナ型半導体装置 |
JPH11288949A (ja) * | 1998-02-24 | 1999-10-19 | Samsung Electronics Co Ltd | 半絶縁ポリシリコン(sipos)を用いた電力半導体装置及びその製造方法 |
-
1971
- 1971-08-06 JP JP5903071A patent/JPS4826077A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830156A (ja) * | 1981-08-17 | 1983-02-22 | Nec Corp | 半導体集積回路 |
JPS59217359A (ja) * | 1983-05-26 | 1984-12-07 | Hitachi Ltd | 高耐圧プレ−ナ型半導体装置 |
JPH11288949A (ja) * | 1998-02-24 | 1999-10-19 | Samsung Electronics Co Ltd | 半絶縁ポリシリコン(sipos)を用いた電力半導体装置及びその製造方法 |
JP4607266B2 (ja) * | 1998-02-24 | 2011-01-05 | フェアチャイルドコリア半導體株式会社 | 半絶縁ポリシリコン(sipos)を用いた電力半導体装置及びその製造方法 |