JPS4825320B1 - - Google Patents

Info

Publication number
JPS4825320B1
JPS4825320B1 JP43093207A JP9320768A JPS4825320B1 JP S4825320 B1 JPS4825320 B1 JP S4825320B1 JP 43093207 A JP43093207 A JP 43093207A JP 9320768 A JP9320768 A JP 9320768A JP S4825320 B1 JPS4825320 B1 JP S4825320B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43093207A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4825320B1 publication Critical patent/JPS4825320B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G55/00Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/0654Oxides of the platinum group
JP43093207A 1967-12-20 1968-12-20 Pending JPS4825320B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69210867A 1967-12-20 1967-12-20

Publications (1)

Publication Number Publication Date
JPS4825320B1 true JPS4825320B1 (en) 1973-07-27

Family

ID=24779294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43093207A Pending JPS4825320B1 (en) 1967-12-20 1968-12-20

Country Status (3)

Country Link
JP (1) JPS4825320B1 (en)
FR (1) FR1597941A (en)
GB (1) GB1224527A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018043895A (en) * 2016-09-12 2018-03-22 住友金属鉱山株式会社 Ruthenium dioxide powder and production method thereof, thick film resistor paste, and thick film resistor
JP2018165222A (en) * 2017-03-28 2018-10-25 住友金属鉱山株式会社 Ruthenium acid bismuth particle containing glass, method for manufacturing the same, thick film resistor composition and thick film resistor paste

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163706A (en) * 1977-12-02 1979-08-07 Exxon Research & Engineering Co. Bi2 [M2-x Bix ]O7-y compounds wherein M is Ru, Ir or mixtures thereof, and electrochemical devices containing same (Bat-24)
FR2694400A1 (en) * 1992-07-31 1994-02-04 Inst Nat Polytech Grenoble Electrode material for a potentiometric oxygen sensor operating at a temperature below 250degree C, and method for obtaining it.
WO2013073711A1 (en) * 2011-11-18 2013-05-23 独立行政法人科学技術振興機構 Method for forming amorphous conductive oxide film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018043895A (en) * 2016-09-12 2018-03-22 住友金属鉱山株式会社 Ruthenium dioxide powder and production method thereof, thick film resistor paste, and thick film resistor
JP2018165222A (en) * 2017-03-28 2018-10-25 住友金属鉱山株式会社 Ruthenium acid bismuth particle containing glass, method for manufacturing the same, thick film resistor composition and thick film resistor paste

Also Published As

Publication number Publication date
FR1597941A (en) 1970-06-29
GB1224527A (en) 1971-03-10

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