JPH1197405A - Method and device for washing process - Google Patents
Method and device for washing processInfo
- Publication number
- JPH1197405A JPH1197405A JP26921597A JP26921597A JPH1197405A JP H1197405 A JPH1197405 A JP H1197405A JP 26921597 A JP26921597 A JP 26921597A JP 26921597 A JP26921597 A JP 26921597A JP H1197405 A JPH1197405 A JP H1197405A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- chemical solution
- pure water
- chemical
- immersing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、例えば半導体ウ
エハやＬＣＤ用ガラス基板等の被処理体を薬液や純水等
の洗浄液に浸漬して洗浄する洗浄処理方法及び洗浄処理
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method and a cleaning apparatus for immersing an object to be processed, such as a semiconductor wafer or a glass substrate for an LCD, in a cleaning solution such as a chemical solution or pure water.
【０００２】[0002]
【従来の技術】一般に、半導体製造装置の製造工程にお
いては、半導体ウエハやＬＣＤ用ガラス等の被処理体
（以下にウエハ等という）を例えばアンモニア水（ＮＨ
4ＯＨ）やフッ化水素酸（ＨＦ）等の薬液やリンス液
（純水）等の洗浄液が貯留された洗浄槽に順次浸漬して
洗浄を行う洗浄処理装置が広く採用されている。2. Description of the Related Art Generally, in a manufacturing process of a semiconductor manufacturing apparatus, an object to be processed (hereinafter, referred to as a wafer or the like) such as a semiconductor wafer or LCD glass is made of, for example, ammonia water (NH
2. Description of the Related Art Cleaning treatment apparatuses that sequentially immerse in a cleaning tank in which a cleaning solution such as a chemical solution such as 4OH) or hydrofluoric acid (HF) or a rinsing solution (pure water) is stored for cleaning are widely used.
【０００３】従来のこの種の洗浄処理装置としては、洗
浄液を貯留すると共に洗浄液中に被処理体を浸漬してそ
の表面を洗浄する洗浄槽と、純水供給源とを接続する洗
浄液供給管に、薬液を貯留する薬液貯留容器を接続して
なり、薬液貯留容器内の薬液に搬送用不活性ガス例えば
窒素（Ｎ2）ガスを加圧して、洗浄液供給管内を流れる
純水中に薬液を注入して、所定の濃度の薬液を洗浄槽内
に供給して洗浄処理を行う構造のものが広く使用されて
いる。A conventional cleaning apparatus of this type includes a cleaning tank for storing a cleaning liquid and immersing an object in the cleaning liquid to clean the surface thereof, and a cleaning liquid supply pipe for connecting a pure water supply source. A chemical solution storage container for storing a chemical solution is connected, a carrier inert gas such as nitrogen (N2) gas is pressurized to the chemical solution in the chemical solution storage container, and the chemical solution is injected into pure water flowing through the cleaning solution supply pipe. In addition, a structure in which a chemical solution having a predetermined concentration is supplied into a cleaning tank to perform a cleaning process is widely used.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
この種の洗浄処理装置においては、薬液貯留容器内に貯
留された薬液に不活性ガス例えばＮ2ガスを加圧して薬
液を純水ライン中に注入する方式であるため、注入速度
は一定であり、また注入速度を短時間内に変化させるの
が難しいという問題があった。そのため、被処理体の状
態に対応させた適性濃度の洗浄液の供給が不十分とな
り、洗浄効率が低下すると共に、歩留まりの低下をきた
すという問題があった。However, in this type of conventional cleaning apparatus, an inert gas such as N2 gas is pressurized to a chemical solution stored in a chemical solution storage container, and the chemical solution is injected into a pure water line. Therefore, there is a problem that the injection speed is constant and it is difficult to change the injection speed within a short time. Therefore, there is a problem that the supply of the cleaning liquid having an appropriate concentration corresponding to the state of the object to be processed becomes insufficient, thereby lowering the cleaning efficiency and lowering the yield.
【０００５】この発明は上記事情に鑑みなされたもの
で、所定量の薬液を純水中に注入して所定濃度の薬液を
使用して洗浄効率の向上を図れるようにした洗浄処理方
法及び洗浄処理装置を提供することを目的とするもので
ある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a cleaning method and a cleaning process in which a predetermined amount of a chemical is injected into pure water and a cleaning solution having a predetermined concentration is used to improve the cleaning efficiency. It is intended to provide a device.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、この発明は以下のように構成する。In order to achieve the above object, the present invention is configured as follows.
【０００７】（１）請求項１記載の発明は、純水中に被
処理体を浸漬して洗浄する工程と、その後、上記純水中
に薬液を注入してなる洗浄液中に上記被処理体を浸漬し
て洗浄する工程とを有する洗浄処理方法であって、 洗
浄処理中に、上記洗浄液中の上記薬液の濃度を変化させ
ることを特徴とする。(1) The invention according to claim 1 is a step of immersing the object to be treated in pure water for cleaning, and thereafter, the object to be treated is contained in a cleaning liquid obtained by injecting a chemical solution into the pure water. And rinsing the cleaning solution, wherein the concentration of the chemical solution in the cleaning solution is changed during the cleaning process.
【０００８】（２）請求項２記載の発明は、純水中に被
処理体を浸漬して洗浄する工程と、その後、上記純水中
に薬液を注入してなる洗浄液中に上記被処理体を浸漬し
て洗浄する工程とを有する洗浄処理方法であって、 上
記洗浄液の温度に基づいて上記薬液の注入量を変化させ
ることを特徴とする。(2) The invention according to claim 2 is a step of immersing the object to be treated in pure water for cleaning, and thereafter, the object to be treated is provided in a cleaning solution obtained by injecting a chemical solution into the pure water. And cleaning the substrate by immersing the cleaning solution in the cleaning solution, wherein the injection amount of the chemical solution is changed based on the temperature of the cleaning solution.
【０００９】（３）請求項３記載の発明は、純水中に被
処理体を浸漬して洗浄する工程と、その後、上記純水中
に薬液を注入してなる洗浄液中に上記被処理体を浸漬し
て洗浄する工程とを有する洗浄処理方法であって、 一
工程中に上記薬液の注入量を多段的に変化させることを
特徴とする。(3) The invention according to claim 3 is a step of immersing the object to be treated in pure water for cleaning, and thereafter, the object to be treated is contained in a cleaning solution obtained by injecting a chemical solution into the pure water. And a step of immersing and cleaning the substrate, wherein the injection amount of the chemical solution is changed in multiple steps during one step.
【００１０】（４）請求項４記載の発明は、純水中に被
処理体を浸漬して洗浄する工程と、その後、供給される
上記純水中に薬液を注入してなる洗浄液中に上記被処理
体を浸漬して洗浄する工程とを有する洗浄処理方法であ
って、 上記純水の供給量に基づいて上記薬液の注入量
を変化させることを特徴とする。(4) The invention according to claim 4 is a step of immersing the object to be treated in pure water for cleaning, and thereafter, in the cleaning liquid obtained by injecting a chemical solution into the supplied pure water. A method of immersing and cleaning an object to be processed, wherein the injection amount of the chemical solution is changed based on the supply amount of the pure water.
【００１１】（５）請求項５記載の発明は、洗浄液を貯
留すると共に洗浄液中に被処理体を浸漬してその表面を
洗浄する洗浄槽と、 上記洗浄槽と純水供給源とを接続
する洗浄液供給管と、 薬液を貯留する薬液貯留容器
と、 開閉切換手段を介して上記洗浄液供給管と薬液貯
留容器とを接続する薬液供給管と、 上記洗浄液供給管
内を流れる純水中に、上記薬液貯留容器中の薬液の所定
量を注入する薬液供給手段と、 上記洗浄槽内の洗浄液
の温度を検出する温度検出手段と、 上記温度検出手段
からの検出信号に基づいて上記薬液供給手段の薬液注入
量を制御する制御手段と、を具備することを特徴とす
る。(5) According to a fifth aspect of the present invention, a cleaning tank for storing a cleaning liquid and immersing an object in the cleaning liquid to clean the surface thereof is connected to the cleaning tank and a pure water supply source. A cleaning liquid supply pipe, a chemical storage vessel for storing a chemical liquid, a chemical liquid supply pipe connecting the cleaning liquid supply pipe and the chemical storage vessel via opening / closing switching means, and a pure water flowing in the cleaning liquid supply pipe. Chemical liquid supply means for injecting a predetermined amount of the chemical liquid in the storage container, temperature detection means for detecting the temperature of the cleaning liquid in the cleaning tank, and chemical liquid injection of the chemical liquid supply means based on a detection signal from the temperature detection means Control means for controlling the amount.
【００１２】（６）請求項６記載の発明は、洗浄液を貯
留すると共に洗浄液中に被処理体を浸漬してその表面を
洗浄する洗浄槽と、 上記洗浄槽と純水供給源とを接続
する洗浄液供給管と、 薬液を貯留する薬液貯留容器
と、 開閉切換手段を介して上記洗浄液供給管と薬液貯
留容器とを接続する薬液供給管と、 上記洗浄液供給管
内を流れる純水中に、上記薬液貯留容器中の薬液の所定
量を注入する薬液供給手段と、 上記洗浄液供給管に介
設される純水流量検出手段と、 上記純水量検出手段か
らの検出信号に基づいて上記薬液供給手段の注入量を制
御する制御手段と、を具備することを特徴とする。(6) According to a sixth aspect of the present invention, a cleaning tank for storing a cleaning liquid and immersing an object in the cleaning liquid to clean the surface thereof is connected to the cleaning tank and a pure water supply source. A cleaning liquid supply pipe, a chemical storage vessel for storing a chemical liquid, a chemical liquid supply pipe connecting the cleaning liquid supply pipe and the chemical storage vessel via opening / closing switching means, and a pure water flowing in the cleaning liquid supply pipe. Chemical solution supply means for injecting a predetermined amount of the chemical solution in the storage container; pure water flow rate detection means interposed in the cleaning solution supply pipe; and injection of the chemical solution supply means based on a detection signal from the pure water amount detection means. Control means for controlling the amount.
【００１３】（７）請求項７記載の発明は、請求項５又
は６記載の洗浄処理装置において、上記洗浄槽を、洗浄
液を貯留して被処理体を浸漬する内槽と、この内槽の開
口部の外方縁部を覆う外槽とで構成し、 上記外槽の底
部と、上記内槽の内に配設される洗浄液供給部とを、循
環管路にて接続し、 上記循環管路に、循環ポンプ，温
度調整機構及びフィルタを介設してなる、ことを特徴と
する。(7) According to a seventh aspect of the present invention, in the cleaning apparatus according to the fifth or sixth aspect, the cleaning tank comprises an inner tank for storing a cleaning liquid and immersing the object to be processed, and an inner tank for the inner tank. An outer tank that covers an outer edge of the opening, and a bottom portion of the outer tank and a cleaning liquid supply unit disposed in the inner tank are connected by a circulation pipe; It is characterized in that a circulating pump, a temperature adjusting mechanism and a filter are interposed in the path.
【００１４】この発明によれば、純水中に被処理体を浸
漬して洗浄した後、純水中に薬液を注入してなる洗浄液
中に被処理体を浸漬して洗浄する際、洗浄液中の薬液の
濃度を変化させることにより、短時間内に所定濃度の洗
浄液とすることができるので、被処理体の薬液洗浄効率
の向上が図れると共に、洗浄処理全体のスループットの
向上が図れる（請求項１）。According to the invention, after the object to be processed is immersed in pure water for cleaning, the object to be processed is immersed in a cleaning solution obtained by injecting a chemical solution into pure water for cleaning. By changing the concentration of the chemical solution, a cleaning solution having a predetermined concentration can be obtained in a short time, so that the efficiency of cleaning the chemical solution of the object to be processed can be improved and the throughput of the entire cleaning process can be improved. 1).
【００１５】また、純水中に被処理体を浸漬して洗浄し
た後、純水中に薬液を注入してなる洗浄液中に被処理体
を浸漬して洗浄する際、洗浄液の温度に基づいて薬液の
注入量を変化させることにより、被処理体の環境温度に
基づいた最適濃度の洗浄液とすることができるので、被
処理体の薬液洗浄効率の向上が図れると共に、洗浄処理
全体のスループットの向上が図れる（請求項２，５）。Further, after the object to be processed is immersed in pure water for cleaning, the object to be processed is immersed in a cleaning solution obtained by injecting a chemical solution into pure water for cleaning, based on the temperature of the cleaning solution. By changing the amount of chemical solution injected, it is possible to obtain a cleaning solution with the optimum concentration based on the environmental temperature of the object to be processed, thereby improving the efficiency of cleaning the object with the chemical solution and improving the throughput of the entire cleaning process. (Claims 2 and 5).
【００１６】また、純水中に被処理体を浸漬して洗浄し
た後、純水中に薬液を注入してなる洗浄液中に被処理体
を浸漬して洗浄する工程中に、薬液の注入量を多段的に
変化させることにより、洗浄工程の初期時に薬液を多量
に注入して濃度の高い洗浄液とすることができるので、
被処理体の浸漬により希釈される洗浄液の濃度の不安定
時間を短縮することができる。したがって、洗浄効率の
向上が図れると共に、洗浄処理全体のスループットの向
上が図れる（請求項３）。Further, after the object to be treated is immersed in pure water for cleaning, the amount of the chemical solution injected during the step of immersing the object in a cleaning solution obtained by injecting a chemical solution into pure water and cleaning the same. By changing the in a multi-stage, it is possible to make a high concentration cleaning solution by injecting a large amount of chemical solution at the beginning of the cleaning process,
The unstable time of the concentration of the cleaning liquid diluted by immersion of the object can be reduced. Therefore, the cleaning efficiency can be improved, and the throughput of the entire cleaning process can be improved (claim 3).
【００１７】また、純水中に被処理体を浸漬して洗浄し
た後、純水中に薬液を注入してなる洗浄液中に被処理体
を浸漬して洗浄する際、純水の供給量に基づいて薬液の
注入量を変化させることにより、純水の供給量に基づい
た最適濃度の洗浄液とすることができるので、被処理体
の薬液洗浄効率の向上が図れると共に、洗浄処理全体の
スループットの向上が図れる（請求項４，６）。Further, after the object to be treated is immersed in pure water for washing, the object to be treated is immersed in a cleaning solution obtained by injecting a chemical solution into pure water for cleaning. By changing the injection amount of the chemical based on this, the cleaning liquid having the optimum concentration based on the supply amount of pure water can be obtained, so that the efficiency of cleaning the chemical of the object to be processed can be improved and the throughput of the entire cleaning process can be improved. Improvement can be achieved (claims 4 and 6).
【００１８】また、洗浄槽内に貯留された薬液を温度調
整機構により所定の温度に温度調整すると共に、フィル
タリングしつつ循環供給することにより、薬液の消費量
の削減が図れると共に、薬液の有効利用が図れる（請求
項７）。Further, the temperature of the chemical solution stored in the cleaning tank is adjusted to a predetermined temperature by a temperature adjusting mechanism, and the chemical solution is circulated and supplied while filtering, so that the consumption of the chemical solution can be reduced and the chemical solution can be effectively used. (Claim 7).
【００１９】[0019]
【発明の実施の形態】以下に、この発明の実施の形態を
図面に基づいて詳細に説明する。この実施形態では半導
体ウエハの洗浄処理システムに適用した場合について説
明する。Embodiments of the present invention will be described below in detail with reference to the drawings. In this embodiment, a case where the present invention is applied to a semiconductor wafer cleaning processing system will be described.
【００２０】図１はこの発明に係る洗浄処理装置を適用
した洗浄処理システムの一例を示す概略平面図、図２は
図１の一部の概略側面図である。FIG. 1 is a schematic plan view showing an example of a cleaning system to which the cleaning apparatus according to the present invention is applied, and FIG. 2 is a schematic side view of a part of FIG.
【００２１】上記洗浄処理システムは、被処理体である
半導体ウエハＷ（以下にウエハという）を水平状態に収
納する容器例えばキャリア１を搬入、搬出するための搬
送部２と、ウエハＷを薬液、洗浄液等の液処理すると共
に乾燥処理する処理部３と、搬送部２と処理部３との間
に位置してウエハＷの受渡し、位置調整及び姿勢変換等
を行うインターフェース部４とで主に構成されている。The cleaning system includes a transfer section 2 for loading and unloading a container, for example, a carrier 1 for horizontally storing a semiconductor wafer W (hereinafter, referred to as a wafer) as an object to be processed, It mainly includes a processing unit 3 that performs a liquid process such as a cleaning liquid and a drying process, and an interface unit 4 that is located between the transfer unit 2 and the processing unit 3 and that performs transfer of the wafer W, position adjustment, and posture change. Have been.
【００２２】上記搬送部２は、洗浄処理システムの一側
端部に併設して設けられる搬入部５と搬出部６とで構成
されている。また、搬入部５は、上部搬送機構７からキ
ャリア１を受け取る受取り部５ａと、この受取り部５ａ
から水平に搬送されるキャリア１を載置する受渡し部５
ｂとからなり、受渡し部５ｂには、キャリア１を上部位
置とインターフェース部４の搬入口（図示せず）との間
で搬送するキャリアリフタ８が配設されている。また、
搬出部６には、キャリア１をインターフェース部４の搬
出口（図示せず）と上部との間で搬送するキャリアリフ
タ８が配設され、これらキャリアリフタ８によって搬入
部５間又は搬出部６間でのキャリア１の搬送を行うこと
ができると共に、空のキャリア１をインターフェース部
４の上方に設けられたキャリア待機部９への受け渡し及
びキャリア待機部９からの受け取りを行うことができる
ように構成されている（図２参照）。The transport section 2 includes a carry-in section 5 and a carry-out section 6 which are provided alongside one end of the cleaning system. The loading unit 5 includes a receiving unit 5a that receives the carrier 1 from the upper transport mechanism 7, and a receiving unit 5a.
Transfer section 5 on which carrier 1 is transported horizontally from
b, a carrier lifter 8 for transporting the carrier 1 between an upper position and a carry-in port (not shown) of the interface unit 4 is provided in the delivery unit 5b. Also,
A carrier lifter 8 for transporting the carrier 1 between a carry-out port (not shown) of the interface unit 4 and an upper portion is provided in the carry-out unit 6, and the carrier lifter 8 allows the carrier lifter 8 to carry the carrier 1 between the carry-in unit 5 and the carry-out unit 6. So that the carrier 1 can be transferred to the carrier standby unit 9 provided above the interface unit 4 and the empty carrier 1 can be received from the carrier standby unit 9. (See FIG. 2).
【００２３】上記インターフェース部４は、区画壁４ｃ
によって区画される搬送部２に隣接する第１の室４ａ
と、処理部３に隣接する第２の室４ｂとで構成されてい
る。そして、第１の室４ａ内には、搬入部５（具体的に
は受渡し部５ｂ）のキャリア１から複数枚のウエハＷを
取り出して搬送する水平方向（Ｘ，Ｙ方向），垂直方向
（Ｚ方向）及び回転（θ方向）可能なウエハ取出しアー
ム１０と、ウエハＷに設けられたノッチを揃えるノッチ
アライナー１１と、ウエハ取出しアーム１０によって取
り出された複数枚のウエハＷの間隔を調整する間隔調整
機構（図示せず）を具備すると共に、水平状態のウエハ
Ｗを垂直状態に変換する第１の姿勢変換装置１２が配設
されている。The interface section 4 has a partition wall 4c.
First chamber 4a adjacent to the transport section 2 partitioned by
And a second chamber 4b adjacent to the processing unit 3. Then, in the first chamber 4a, a plurality of wafers W are taken out of the carrier 1 of the loading unit 5 (specifically, the transfer unit 5b) and are transferred and transferred in the horizontal direction (X, Y direction) and the vertical direction (Z direction). Direction) and a wafer unloading arm 10 that can be rotated (θ direction), a notch aligner 11 that aligns notches provided on the wafer W, and an interval adjustment that adjusts an interval between a plurality of wafers W unloaded by the wafer unloading arm 10. A first attitude conversion device 12 that includes a mechanism (not shown) and converts a horizontal state of the wafer W to a vertical state is provided.
【００２４】また、第２の室４ｂ内には、処理済みの複
数枚のウエハＷを処理部３から垂直状態のまま搬送する
後述するウエハ搬送チャック２３から受け取ったウエハ
Ｗを垂直状態から水平状態に変換する第２の姿勢変換装
置１３と、この第２の姿勢変換装置１３によって水平状
態に変換された複数枚のウエハＷを受け取ってウエハ受
取り部１４に搬送された空のキャリア１内に収納する水
平方向（Ｘ，Ｙ方向），垂直方向（Ｚ方向）及び回転
（θ方向）可能なウエハ収納アーム１５が配設されてい
る。なお、ウエハ受取り部１４には、ウエハ受取り部１
４とキャリア待機部９との間でキャリアを搬送するキャ
リアリフタ８が配設されている。また、キャリア待機部
９には、ウエハ受渡し部５ｂによってウエハＷを受渡し
た後の空のキャリア１やウエハ受取り部１４でキャリア
１内にウエハＷを収容したキャリタ１を所定の待機位置
あるいはウエハ受取り部１４からキャリア待機部９に搬
送されたウエハＷを収納したキャリア１を搬出部６の上
方へ移動するキャリア搬送ロボット１６が配設されてい
る。In the second chamber 4b, a plurality of processed wafers W are transported from the processing section 3 in a vertical state. And a plurality of wafers W that have been converted to a horizontal state by the second attitude conversion device 13 are received and stored in the empty carrier 1 transported to the wafer receiving unit 14. A horizontal (X, Y direction), vertical (Z direction) and rotatable (θ direction) wafer storage arm 15 is provided. The wafer receiving unit 14 includes the wafer receiving unit 1
A carrier lifter 8 for transporting the carrier between the carrier waiting unit 9 and the carrier waiting unit 9 is provided. Further, the carrier waiting section 9 places the empty carrier 1 after the wafer W has been delivered by the wafer delivery section 5b or the carriage 1 containing the wafer W in the carrier 1 by the wafer receiving section 14 at a predetermined waiting position or wafer reception. A carrier transfer robot 16 that moves the carrier 1 containing the wafer W transferred from the unit 14 to the carrier standby unit 9 above the unloading unit 6 is provided.
【００２５】一方、上記処理部３には、ウエハＷに付着
するパーティクルや有機物汚染を除去する第１の処理ユ
ニット１９と、ウエハＷに付着する金属汚染を除去する
第２の処理ユニット１８と、ウエハＷに付着する酸化膜
を除去する第３の処理ユニット１７及びチャック洗浄ユ
ニット２０が直線状に配列されている。なお、第３の処
理ユニット１７の上方には乾燥処理ユニット２１が配設
されている。なおこの場合、第３の処理ユニット１７に
この発明に係る洗浄処理装置が適用されている。また、
これら各ユニット１７〜２０と対向する位置から上記イ
ンターフェース部４に延在して設けられた搬送路２２
に、Ｘ，Ｙ方向（水平方向）、Ｚ方向（垂直方向）及び
回転（θ）可能なウエハ搬送チャック２３が配設されて
いる。On the other hand, the processing section 3 includes a first processing unit 19 for removing particles and organic contaminants adhering to the wafer W, a second processing unit 18 for removing metal contaminants adhering to the wafer W, A third processing unit 17 for removing an oxide film adhered to the wafer W and a chuck cleaning unit 20 are linearly arranged. Note that a drying processing unit 21 is provided above the third processing unit 17. In this case, the cleaning processing apparatus according to the present invention is applied to the third processing unit 17. Also,
A transport path 22 provided to extend to the interface unit 4 from a position facing each of these units 17 to 20.
A wafer transfer chuck 23 that can rotate in the X and Y directions (horizontal direction), the Z direction (vertical direction), and rotate (θ) is provided.
【００２６】次に、この発明に係る洗浄処理装置につい
て説明する。 ◎第一実施形態 図３はこの発明に係る洗浄処理装置の第一実施形態を示
す概略構成図である。Next, a cleaning apparatus according to the present invention will be described. First Embodiment FIG. 3 is a schematic configuration diagram showing a first embodiment of the cleaning apparatus according to the present invention.
【００２７】上記洗浄処理装置１７は、薬液例えばフッ
化水素酸（ＨＦ）の希釈液（ＤＨＦ）やリンス液例えば
純水等の洗浄液を貯留すると共に洗浄液中に被処理体例
えば半導体ウエハＷ（以下にウエハという）を浸漬して
その表面を洗浄する洗浄槽３０と、この洗浄槽３０と純
水供給源３１とを接続すべく洗浄槽３０内に配設される
洗浄液供給ノズル３２と純水供給源３１とを接続する洗
浄液供給管３３と、薬液例えばフッ化水素酸（ＨＦ）を
貯留する薬液貯留容器３４と、注入開閉切換弁３５（開
閉切換手段）を介して洗浄液供給管３３と薬液貯留容器
３４とを接続する薬液供給管３６と、薬液供給管３６に
介設される薬液供給手段例えばダイヤフラムポンプ３７
とを具備してなる。The cleaning apparatus 17 stores a cleaning solution such as a chemical solution such as a diluting solution (DHF) of hydrofluoric acid (HF) or a rinsing solution such as pure water, and stores an object to be processed such as a semiconductor wafer W (hereinafter referred to as a semiconductor wafer W). A cleaning tank 30 for immersing a wafer in the cleaning tank 30 to clean the surface thereof, a cleaning liquid supply nozzle 32 provided in the cleaning tank 30 for connecting the cleaning tank 30 and a pure water supply source 31, and a pure water supply A cleaning liquid supply pipe 33 that connects to the source 31, a chemical liquid storage container 34 that stores a chemical such as hydrofluoric acid (HF), and a cleaning liquid supply pipe 33 and a chemical liquid storage via an injection opening / closing switching valve 35 (opening / closing switching means). A chemical solution supply pipe 36 connecting the container 34 and a chemical solution supply means such as a diaphragm pump 37 interposed in the chemical solution supply pipe 36.
And
【００２８】この場合、洗浄槽３０は、ウエハＷの複数
枚例えば５０枚を保持する保持部材３０ａを配設する内
槽３０ｂと、この内槽３０ｂの開口部の外方縁部を覆
い、内槽３０ｂからオーバーフローする洗浄液を受け止
める外槽３０ｃとで構成されている。なお、内槽３０ｂ
の底部にはドレン弁３０ｄを介設したドレン管３０ｅが
接続され、外槽３０ｃの底部には開閉弁３０ｇを介設し
た排水管３０ｆが接続されている。In this case, the cleaning tank 30 covers an inner tank 30b provided with a holding member 30a for holding a plurality of wafers W, for example, 50 wafers, and an outer edge of an opening of the inner tank 30b. And an outer tank 30c for receiving the cleaning liquid overflowing from the tank 30b. In addition, the inner tank 30b
Is connected to a drain pipe 30e provided with a drain valve 30d, and a drain pipe 30f provided with an open / close valve 30g is connected to the bottom of the outer tank 30c.
【００２９】また、薬液供給管３６におけるダイヤフラ
ムポンプ３７の吐出側と薬液貯留容器３４とに循環管路
３８が接続され、この循環管路３８には、ポンプ吐出側
から薬液貯留容器３４側に向かって開閉弁３９及びフィ
ルタ４０が介設されている。このように、ポンプ吐出側
と薬液貯留容器側とを循環管路３９にて接続し、この循
環管路３９に開閉弁３９とフィルタ４０を介設すること
により、薬液の純水への注入を停止している待機状態に
おいて、薬液貯留容器３４内に貯留された薬液例えばＨ
Ｆを濾過（フィルタリング）しつつ循環することができ
る。したがって、待機中の薬液を常時循環すると共にフ
ィルタリングして、薬液注入の円滑化及び注入量の定量
化を図ることができる。なお、薬液貯留容器３４の外側
には、容器３４内の薬液の液面を検出するレベルセンサ
４１が配設されており、このレベルセンサ４１によって
検出された信号は図示しない制御手段に伝達され、制御
手段からの制御信号に基づいて薬液供給用開閉弁４２が
開放されて薬液供給源４３から薬液が容器３４内に供給
されるように構成されている。なお、薬液貯留容器３４
の頂部には空気抜き孔が設けられ、この空気抜き孔を介
して空気抜き部３４ａに接続されている。A circulation line 38 is connected to the discharge side of the diaphragm pump 37 in the chemical supply pipe 36 and the chemical storage container 34, and the circulation line 38 is connected from the pump discharge side to the chemical storage container 34 side. An opening / closing valve 39 and a filter 40 are interposed. In this way, the pump discharge side and the chemical solution storage container side are connected by the circulation pipe 39, and the circulation pipe 39 is provided with the on-off valve 39 and the filter 40, so that the injection of the drug solution into pure water is performed. In the stopped standby state, the chemical solution stored in the chemical solution storage container 34, for example, H
F can be circulated while being filtered. Therefore, it is possible to constantly circulate and filter the waiting chemical solution, thereby facilitating the injection of the chemical solution and quantifying the injection amount. A level sensor 41 for detecting the level of the chemical in the container 34 is provided outside the chemical storage container 34, and a signal detected by the level sensor 41 is transmitted to control means (not shown). Based on a control signal from the control means, the chemical liquid supply opening / closing valve 42 is opened, and the chemical liquid is supplied from the chemical liquid supply source 43 into the container 34. Note that the drug solution storage container 34
Is provided with an air vent hole at the top, and is connected to the air vent portion 34a via the air vent hole.
【００３０】また、上記洗浄槽３０には洗浄槽３０内の
洗浄液の温度を検出する温度センサ４４が配設されてお
り、この温度センサ４４によって検出された温度信号が
制御手段例えばＣＰＵ４５（中央演算処理装置）に伝達
され、ＣＰＵ４５に予め記憶された情報と演算処理され
た制御信号に基づいて上記ダイヤフラムポンプ３７のコ
ントローラ３７Ａが制御されて、薬液の所定量が洗浄液
供給管３３中を流れる純水中に注入されるように構成さ
れている。The cleaning tank 30 is provided with a temperature sensor 44 for detecting the temperature of the cleaning liquid in the cleaning tank 30. A temperature signal detected by the temperature sensor 44 is supplied to a control means such as a CPU 45 (central processing unit). The controller 37A of the diaphragm pump 37 is controlled based on the information stored in the CPU 45 and the control signal that has been subjected to the arithmetic processing, so that a predetermined amount of the chemical solution is supplied to the pure water flowing through the cleaning solution supply pipe 33. It is configured to be injected into.
【００３１】一方、上記洗浄液供給管３３には、上記注
入開閉切換弁３５の他に、純水供給源３１側から順に純
水量検出手段例えばフローメータ４６と開閉弁４７が介
設されている。そして、フローメータ４６によって検出
された純水量の信号が上記ＣＰＵ４５に伝達され、ＣＰ
Ｕ４５に予め記憶された情報と演算処理された制御信号
に基づいて上記ダイヤフラムポンプ３７のコントローラ
３７Ａが制御されて、薬液の所定量が洗浄液供給管３３
中を流れる純水中に注入されるように構成されている。On the other hand, in addition to the injection opening / closing switching valve 35, a pure water supply detecting means, for example, a flow meter 46 and an opening / closing valve 47 are provided in the cleaning liquid supply pipe 33 in order from the pure water supply source 31 side. Then, the signal of the pure water amount detected by the flow meter 46 is transmitted to the CPU 45, and the CP 45
The controller 37A of the diaphragm pump 37 is controlled based on the information stored in advance in U45 and the control signal that has been subjected to the arithmetic processing, so that a predetermined amount of the chemical liquid is supplied to the cleaning liquid supply pipe 33.
It is configured to be injected into pure water flowing through it.
【００３２】上記のように構成される洗浄処理装置にお
いて、注入開閉切換弁３５を操作して純水供給源３１と
洗浄槽３０とを連通状態にすることにより、純水供給源
３１から洗浄液供給管３３及び洗浄液供給ノズル３２を
介して純水が洗浄槽３０内に貯留されると共に、オーバ
ーフローして洗浄槽３０内に収容される複数枚例えば５
０枚のウエハＷの洗浄を行うことができる。In the cleaning apparatus constructed as described above, the cleaning liquid supply from the pure water supply source 31 is performed by operating the injection opening / closing switching valve 35 to make the pure water supply source 31 and the cleaning tank 30 communicate with each other. Pure water is stored in the cleaning tank 30 via the pipe 33 and the cleaning liquid supply nozzle 32, and a plurality of, for example, 5
Cleaning of zero wafers W can be performed.
【００３３】また、注入開閉切換弁３５を操作して純水
供給源３１からの純水を流通させた状態で薬液供給管３
６側を開放状態とし、この状態で、ダイヤフラムポンプ
３７を駆動することにより、薬液貯留容器３４内から薬
液例えばフッ化水素酸（ＨＦ）の所定量が薬液供給管３
６を介して洗浄液供給管３３内に流れ、純水によって希
釈されて所定濃度の薬液すなわち希釈フッ化水素酸（Ｄ
ＨＦ）が洗浄槽３０内に供給される。この際、ＨＦの注
入量を適宜調整することにより、図４に示すように、Ｄ
ＨＦの濃度を短時間（Ｔ1）内に一定にすることができ
る。これにより、予めシュミレータ等によって設定され
た所定濃度のＤＨＦが洗浄槽３０内に貯留されると共
に、オーバーフローして洗浄槽３０内に収容されたウエ
ハＷの表面に付着するパーティクルや酸化膜等を除去す
ることができる。この場合、一般に反応速度は、 ｖ＝Ａ×ｅαＴ…（１） で表わされる。ここで、ｖ：反応速度(Å/min)，Ａ：濃
度（重量％），Ｔ：温度である。したがって、図６に示
すように、薬液濃度を高くすることにより反応速度を速
くすることができ、洗浄効率の向上を図ることができ
る。The chemical supply pipe 3 is operated while the pure water from the pure water supply source 31 is circulated by operating the injection open / close switching valve 35.
By opening the diaphragm pump 37 in this state, a predetermined amount of a chemical such as hydrofluoric acid (HF) is supplied from the chemical storage container 34 into the chemical supply pipe 3.
6, and flows into the cleaning liquid supply pipe 33 and is diluted with pure water to have a predetermined concentration of a chemical solution, ie, diluted hydrofluoric acid (D
HF) is supplied into the cleaning tank 30. At this time, by appropriately adjusting the injection amount of HF, as shown in FIG.
The concentration of HF can be kept constant within a short time (T1). As a result, DHF having a predetermined concentration set in advance by a simulator or the like is stored in the cleaning tank 30, and particles, oxide films, and the like that overflow and adhere to the surface of the wafer W accommodated in the cleaning tank 30 are removed. can do. In this case, the reaction rate is generally expressed as follows: v = A × e αT (1) Here, v: reaction rate (Å / min), A: concentration (% by weight), and T: temperature. Therefore, as shown in FIG. 6, the reaction rate can be increased by increasing the concentration of the chemical solution, and the cleaning efficiency can be improved.
【００３４】また、薬液による洗浄工程中に、ＨＦの注
入量を段階的に変化させることが可能であるので、例え
ば図５に示すように、洗浄処理の初期時においてＨＦの
注入量を多くすることにより、ＤＨＦの濃度を更に短時
間（Ｔ2；Ｔ2＜Ｔ1）内に所定濃度にすることができ、
更に洗浄効率の短縮を図ることができる。Further, during the cleaning step using a chemical solution, the injection amount of HF can be changed stepwise. For example, as shown in FIG. 5, the injection amount of HF is increased at the beginning of the cleaning process. Thereby, the concentration of DHF can be brought to a predetermined concentration within a shorter time (T2; T2 <T1),
Further, the cleaning efficiency can be reduced.
【００３５】また、洗浄槽３０内の洗浄液の温度を温度
センサ４４によって検出し、その温度信号をＣＰＵ４５
に伝達して、ＣＰＵ４５に予め記憶された情報と演算処
理された制御信号に基づいて上記ダイヤフラムポンプ３
７のコントローラ３７Ａを制御することにより、ＨＦの
所定量を洗浄液供給管３３中を流れる純水中に注入する
ことができるので、洗浄効率の向上を図ることができ
る。この場合、 ｖ＝Ａ×ｅαＴ…（１） であるから、温度Ｔが減少した分、濃度Ａを増加させ反
応速度ｖを一定に保つようコントロールする。したがっ
て、図７に示すように、薬液温度を高くすることにより
反応速度を一定に保つことができ、洗浄効率の向上と精
度の向上を図ることができる。The temperature of the cleaning liquid in the cleaning tank 30 is detected by a temperature sensor 44, and the temperature signal is sent to a CPU 45.
To the diaphragm pump 3 based on the information stored in the CPU 45 in advance and the control signal subjected to the arithmetic processing.
By controlling the controller 37A of No. 7, a predetermined amount of HF can be injected into the pure water flowing through the cleaning liquid supply pipe 33, so that the cleaning efficiency can be improved. In this case, since v = A × e αT (1), the control is performed so that the concentration A is increased and the reaction rate v is kept constant as the temperature T decreases. Therefore, as shown in FIG. 7, the reaction speed can be kept constant by increasing the temperature of the chemical solution, and the cleaning efficiency and the accuracy can be improved.
【００３６】上記のようにして薬液処理を行った後、注
入開閉切換弁３５を操作して、再び純水供給源３１と洗
浄槽３０とを連通状態にする一方、薬液供給管３６との
連通を閉じて、洗浄槽３０内に純水を供給してＤＨＦを
純水に置換し、純水内にウエハＷを浸漬すると共に、純
水をオーバーフローしてウエハＷに付着する薬液すなわ
ちＨＦを除去することができる。After the chemical solution treatment is performed as described above, the injection opening / closing switching valve 35 is operated to bring the pure water supply source 31 and the cleaning tank 30 into communication again, while the communication with the chemical supply pipe 36 is established. Is closed, pure water is supplied into the cleaning tank 30 to replace the DHF with pure water, and the wafer W is immersed in the pure water, and the pure water overflows to remove a chemical solution, that is, HF that adheres to the wafer W. can do.
【００３７】◎第二実施形態 図８はこの発明に係る洗浄処理装置の第二実施形態を示
す概略構成図である。Second Embodiment FIG. 8 is a schematic configuration diagram showing a second embodiment of the cleaning apparatus according to the present invention.
【００３８】第二実施形態は、薬液の消費量を削減する
と共に、薬液の有効利用を図れるようにした場合であ
る。すなわち、上記洗浄槽３０を構成する外槽３０ｃの
底部に設けられた排出口と、洗浄槽３０内に配設される
洗浄液供給ノズル３２（洗浄液供給部）とを循環管路５
０にて接続すると共に、この循環管路５０に、排出口側
から洗浄液供給ノズル３２側に向かって順に、開閉弁５
１，循環ポンプ５２，温度調整機構５３及びフィルタ５
４を介設して、洗浄槽３０内に貯留された薬液例えばア
ンモニア水等を循環供給してウエハＷの表面に付着する
金属汚染物や有機物を除去するようにした場合である。The second embodiment is a case where the consumption of the chemical solution is reduced and the chemical solution can be effectively used. That is, a discharge port provided at the bottom of the outer tank 30c constituting the cleaning tank 30 and a cleaning liquid supply nozzle 32 (cleaning liquid supply unit) provided in the cleaning tank 30 are connected to the circulation line 5.
0, and the open / close valve 5 is sequentially connected to the circulation line 50 from the discharge port side toward the cleaning liquid supply nozzle 32 side.
1, circulation pump 52, temperature adjustment mechanism 53, and filter 5
In this case, a chemical solution stored in the cleaning tank 30 such as ammonia water is circulated and supplied to remove metal contaminants and organic substances attached to the surface of the wafer W.
【００３９】上記第二実施形態において、その他の部分
は上記第一実施形態と同じであるので、同一部分には同
一符号を付して、その説明は省略する。In the second embodiment, the other parts are the same as those in the first embodiment. Therefore, the same parts are denoted by the same reference numerals and description thereof will be omitted.
【００４０】上記のように構成される洗浄処理装置にお
いて、洗浄槽３０内に貯留される薬液例えばＤＨＦをオ
ーバーフローして洗浄槽３０内に収容されたウエハＷの
表面に付着する金属汚染物や酸化膜等を除去した後、注
入開閉切換弁３５及び開閉弁４７を閉じて、循環管路５
０の開閉弁５１を開放すると共に、循環ポンプ５２を駆
動することにより、洗浄槽３０内に貯留されたＤＨＦ
を、温度調整機構５３により所定温度に温調すると共
に、フィルタ５４によってフィルタリングして循環供給
し、ＤＨＦ中に浸漬されるウエハＷ表面に付着する金属
汚染物あるいは酸化膜の除去を続行する。In the cleaning apparatus configured as described above, the chemical solution, for example, DHF stored in the cleaning tank 30 overflows, and metal contaminants and oxidation adhere to the surface of the wafer W stored in the cleaning tank 30 by overflowing. After removing the membrane and the like, the injection on / off switching valve 35 and the on / off valve 47 are closed, and the circulation line 5 is closed.
The DHF stored in the cleaning tank 30 is opened by opening the on-off valve 51 and driving the circulation pump 52.
Is adjusted to a predetermined temperature by the temperature adjusting mechanism 53, and is filtered and circulated and supplied by the filter 54 to continue removing metal contaminants or oxide films attached to the surface of the wafer W immersed in DHF.
【００４１】このようにして薬液処理を行った後、開閉
弁４７を開放して、再び純水供給源３１と洗浄槽３０と
を連通状態にする一方、注入開閉切換弁３５を閉じたま
まにして薬液供給管３６との連通を閉じて、洗浄槽３０
内に純水を供給してＤＨＦを純水に置換し、純水内にウ
エハＷを浸漬すると共に、純水をオーバーフローしてウ
エハＷに付着する薬液すなわちＨＦを除去する。After performing the chemical treatment in this manner, the on-off valve 47 is opened to bring the pure water supply source 31 and the washing tank 30 into communication again, while the injection on-off switching valve 35 is kept closed. To close the communication with the chemical supply pipe 36,
Pure water is supplied to the inside to replace DHF with pure water, and the wafer W is immersed in the pure water, and at the same time, the pure water overflows to remove a chemical solution, that is, HF attached to the wafer W.
【００４２】上記のように、洗浄槽３０で純水をオーバ
ーフローさせてウエハＷを洗浄した後、洗浄槽３０に連
続して供給される純水中に所定の濃度に希釈される薬液
例えばＤＨＦをオーバーフローさせてウエハＷを洗浄
し、その後、ＤＨＦの供給を停止して、洗浄槽３０内に
貯留されたＤＨＦを温調すると共にフィルタリングしつ
つ循環供給して洗浄し、再び洗浄槽３０で純水をオーバ
ーフローさせてウエハＷに付着するＨＦを洗浄すること
により、純水からＤＨＦに置換される際にウエハＷの面
内均一性が低下するが、再びＤＨＦから純水に置換する
ことで、均一性が修復されるので、高いエッチング均一
性が得られ、洗浄効率の向上を図ることができる。ま
た、洗浄槽３０内に貯留された薬液例えばＤＨＦを温調
すると共にフィルタリングしつつ循環供給することで、
ＤＨＦの消費量を低減することができると共に、ＤＨＦ
の有効利用を図ることができる。As described above, after the wafer W is cleaned by overflowing the pure water in the cleaning tank 30, the chemical solution diluted to a predetermined concentration, for example, DHF is added to the pure water continuously supplied to the cleaning tank 30. The wafer W is overflowed to wash the wafer W. Thereafter, the supply of DHF is stopped, and the DHF stored in the washing tank 30 is cleaned while being circulated and supplied while controlling the temperature and filtering. To clean the HF adhering to the wafer W by overflowing the wafer W, the in-plane uniformity of the wafer W is reduced when the pure water is replaced with the DHF, but the uniformity is reduced by replacing the DHF with the pure water again. Since the properties are restored, high etching uniformity can be obtained, and the cleaning efficiency can be improved. In addition, by controlling the temperature of a chemical solution such as DHF stored in the cleaning tank 30 and circulating the solution while filtering,
DHF consumption can be reduced, and DHF
Can be effectively used.
【００４３】◎その他の実施形態 なお、上記実施形態では、薬液供給手段がダイヤフラム
ポンプ３７にて形成される場合について説明したが、薬
液供給手段は必しもダイヤフラムポンプである必要はな
く、例えばべローズポンプ等の往復駆動式ポンプを用い
てもよい。また、上記ポンプに代えて不活性ガス例えば
Ｎ2ガスの所定量を薬液貯留容器３４内の薬液に供給し
て薬液の所定量を供給することも可能である。Other Embodiments In the above embodiment, the case where the chemical solution supply means is formed by the diaphragm pump 37 has been described. However, the chemical solution supply means does not necessarily need to be a diaphragm pump. A reciprocating pump such as a rose pump may be used. Further, instead of the pump, a predetermined amount of an inert gas such as N2 gas can be supplied to the chemical in the chemical storage container 34 to supply a predetermined amount of the chemical.
【００４４】また、上記実施形態では、この発明に係る
洗浄処理装置が第３の処理ユニット１７に適用される場
合について説明したが、第１又は第２の処理ユニット１
９，１８にも適用できることは勿論である。In the above embodiment, the case where the cleaning apparatus according to the present invention is applied to the third processing unit 17 has been described.
Needless to say, the present invention can be applied to 9 and 18.
【００４５】また、上記実施形態では、この発明の洗浄
処理装置及び洗浄処理方法を半導体ウエハの洗浄処理シ
ステムに適用した場合について説明したが、半導体ウエ
ハ以外のＬＣＤ用ガラス基板等にも適用できることは勿
論である。In the above embodiment, the case where the cleaning apparatus and the cleaning method of the present invention are applied to a semiconductor wafer cleaning processing system has been described. However, the present invention is also applicable to LCD glass substrates other than semiconductor wafers. Of course.
【００４６】[0046]
【発明の効果】以上に説明したように、この発明によれ
ば、上記のように構成されているので、以下のような優
れた効果が得られる。As described above, according to the present invention, because of the above-described configuration, the following excellent effects can be obtained.
【００４７】（１）請求項１記載の発明によれば、純水
中に被処理体を浸漬して洗浄した後、純水中に薬液を注
入してなる洗浄液中に被処理体を浸漬して洗浄する際、
洗浄液中の薬液の濃度を変化させることにより、短時間
内に所定濃度の洗浄液とすることができるので、被処理
体の薬液洗浄効率の向上が図れると共に、洗浄処理全体
のスループットの向上が図れる。(1) According to the first aspect of the present invention, after the object to be processed is immersed in pure water for cleaning, the object to be processed is immersed in a cleaning solution obtained by injecting a chemical solution into pure water. When cleaning
By changing the concentration of the chemical solution in the cleaning solution, the cleaning solution having a predetermined concentration can be obtained in a short time, so that the efficiency of cleaning the chemical solution of the object to be processed can be improved and the throughput of the entire cleaning process can be improved.
【００４８】（２）請求項２又は５記載の発明によれ
ば、純水中に被処理体を浸漬して洗浄した後、純水中に
薬液を注入してなる洗浄液中に被処理体を浸漬して洗浄
する際、洗浄液の温度に基づいて薬液の注入量を変化さ
せることにより、被処理体の環境温度に基づいた最適濃
度の洗浄液とすることができるので、被処理体の薬液洗
浄効率の向上が図れると共に、洗浄処理全体のスループ
ットの向上が図れる。(2) According to the second or fifth aspect of the present invention, after the object to be processed is immersed in pure water and washed, the object to be processed is poured into a cleaning solution obtained by injecting a chemical solution into pure water. When immersing and cleaning, by changing the injection amount of the chemical based on the temperature of the cleaning liquid, it is possible to obtain a cleaning liquid having an optimum concentration based on the environmental temperature of the object to be processed. And the throughput of the entire cleaning process can be improved.
【００４９】（３）請求項３記載の発明によれば、純水
中に被処理体を浸漬して洗浄した後、純水中に薬液を注
入してなる洗浄液中に被処理体を浸漬して洗浄する工程
中に、薬液の注入量を多段的に変化させることにより、
洗浄工程の初期時に薬液を多量に注入して濃度の高い洗
浄液とすることができるので、被処理体の浸漬により希
釈される洗浄液の濃度の不安定時間を短縮することがで
きると共に、洗浄効率の向上を図ることができる。(3) According to the third aspect of the present invention, after the object to be processed is immersed in pure water for cleaning, the object to be processed is immersed in a cleaning solution obtained by injecting a chemical solution into pure water. By changing the injection amount of the chemical solution in multiple steps during the cleaning process,
At the beginning of the cleaning process, a large amount of a chemical solution can be injected into the cleaning solution to make the cleaning solution highly concentrated, so that the unstable time of the concentration of the cleaning solution diluted by immersing the object to be processed can be shortened, and the cleaning efficiency can be improved. Improvement can be achieved.
【００５０】（４）請求項４又は６記載の発明によれ
ば、純水中に被処理体を浸漬して洗浄した後、純水中に
薬液を注入してなる洗浄液中に被処理体を浸漬して洗浄
する際、純水の供給量に基づいて薬液の注入量を変化さ
せることにより、純水の供給量に基づいた最適濃度の洗
浄液とすることができるので、被処理体の薬液洗浄効率
の向上が図れると共に、洗浄処理全体のスループットの
向上が図れる。(4) According to the invention as set forth in claim 4 or 6, after the object to be processed is immersed in pure water and washed, the object to be processed is poured into a cleaning solution obtained by injecting a chemical solution into pure water. When immersing and cleaning, by changing the injection amount of the chemical based on the supply amount of pure water, it is possible to obtain a cleaning liquid having an optimum concentration based on the supply amount of pure water. The efficiency can be improved, and the throughput of the entire cleaning process can be improved.
【００５１】（５）請求項７記載の発明によれば、洗浄
槽内に貯留された薬液を温度調整機構により所定の温度
に温度調整すると共に、フィルタリングしつつ循環供給
することができるので、上記（１）に加えて薬液の消費
量の削減が図れると共に、薬液の有効利用が図れる。(5) According to the seventh aspect of the present invention, the temperature of the chemical solution stored in the cleaning tank can be adjusted to a predetermined temperature by the temperature adjusting mechanism and can be circulated and supplied while filtering. In addition to (1), it is possible to reduce the consumption amount of the chemical solution and to effectively use the chemical solution.
【図１】この発明の洗浄処理装置を適用した洗浄処理シ
ステムの概略平面図である。FIG. 1 is a schematic plan view of a cleaning system to which a cleaning apparatus of the present invention is applied.
【図２】上記洗浄処理システムの一部の概略側面図であ
る。FIG. 2 is a schematic side view of a part of the cleaning processing system.
【図３】この発明の洗浄処理装置の第一実施形態を示す
概略構成図である。FIG. 3 is a schematic configuration diagram showing a first embodiment of the cleaning apparatus of the present invention.
【図４】この発明の洗浄処理方法における薬液の濃度と
注入量との関係を示すタイムチャートである。FIG. 4 is a time chart showing the relationship between the concentration of the chemical solution and the injection amount in the cleaning treatment method of the present invention.
【図５】この発明の洗浄処理方法における別の薬液の濃
度と注入量との関係を示すタイムチャートである。FIG. 5 is a time chart showing the relationship between the concentration of another chemical solution and the injection amount in the cleaning treatment method of the present invention.
【図６】反応速度と薬液濃度との関係を示すグラフであ
る。FIG. 6 is a graph showing a relationship between a reaction rate and a drug solution concentration.
【図７】反応速度と処理温度との関係を示すグラフであ
る。FIG. 7 is a graph showing a relationship between a reaction rate and a processing temperature.
【図８】この発明に係る洗浄処理装置の第二実施形態を
示す概略構成図である。FIG. 8 is a schematic configuration diagram showing a second embodiment of the cleaning apparatus according to the present invention.
Ｗ 半導体ウエハ（被処理体） ３０ 洗浄槽 ３０ｂ 内槽 ３０ｃ 外槽 ３１ 純水供給源 ３２ 洗浄液供給ノズル（洗浄液供給部） ３３ 洗浄液供給管 ３４ 薬液貯留容器 ３５ 注入開閉切換弁（開閉切換手段） ３６ 薬液供給管 ３７ ダイヤフラムポンプ（薬液供給手段） ４４ 温度センサ（温度検出手段） ４５ ＣＰＵ（制御手段） ４６ フローメータ（純水量検出手段） ５０ 循環管路 ５１ 開閉弁 ５２ 循環ポンプ ５３ 温度調整機構 ５４ フィルタ W Semiconductor wafer (processed object) 30 Cleaning tank 30b Inner tank 30c Outer tank 31 Pure water supply source 32 Cleaning liquid supply nozzle (cleaning liquid supply unit) 33 Cleaning liquid supply pipe 34 Chemical storage container 35 Injection opening / closing switching valve (opening / closing switching means) 36 Chemical solution supply pipe 37 Diaphragm pump (chemical solution supply means) 44 Temperature sensor (temperature detection means) 45 CPU (control means) 46 Flow meter (pure water amount detection means) 50 Circulation line 51 Open / close valve 52 Circulation pump 53 Temperature adjustment mechanism 54 Filter
Claims (7)
程と、その後、上記純水中に薬液を注入してなる洗浄液
中に上記被処理体を浸漬して洗浄する工程とを有する洗
浄処理方法であって、 洗浄処理中に、上記洗浄液中の上記薬液の濃度を変化さ
せることを特徴とする洗浄処理方法。1. A step of immersing an object in pure water for cleaning, and thereafter, a step of immersing the object in a cleaning liquid obtained by injecting a chemical solution into the pure water to wash the object. A cleaning method comprising: changing a concentration of the chemical solution in the cleaning solution during the cleaning process.
程と、その後、上記純水中に薬液を注入してなる洗浄液
中に上記被処理体を浸漬して洗浄する工程とを有する洗
浄処理方法であって、 上記洗浄液の温度に基づいて上記薬液の注入量を変化さ
せることを特徴とする洗浄処理方法。2. A step of immersing the object in pure water for cleaning, and thereafter, a step of immersing the object in a cleaning liquid obtained by injecting a chemical solution into the pure water to clean the object. A cleaning method comprising: changing an injection amount of the chemical solution based on a temperature of the cleaning solution.
程と、その後、供給される上記純水中に薬液を注入して
なる洗浄液中に上記被処理体を浸漬して洗浄する工程と
を有する洗浄処理方法であって、 一工程中に上記薬液の注入量を多段的に変化させること
を特徴とする洗浄処理方法。3. A step of immersing the object in pure water for cleaning, and thereafter immersing the object in a cleaning liquid obtained by injecting a chemical solution into the supplied pure water for cleaning. And a step of changing the injection amount of the chemical solution in one step in one step.
程と、その後、上記純水中に薬液を注入してなる洗浄液
中に上記被処理体を浸漬して洗浄する工程とを有する洗
浄処理方法であって、 上記純水の供給量に基づいて上記薬液の注入量を変化さ
せることを特徴とする洗浄処理方法。4. A step of immersing the object in pure water for cleaning, and thereafter, a step of immersing the object in a cleaning solution obtained by injecting a chemical solution into the pure water to clean the object. A cleaning method comprising: changing an injection amount of the chemical solution based on a supply amount of the pure water.
理体を浸漬してその表面を洗浄する洗浄槽と、 上記洗浄槽と純水供給源とを接続する洗浄液供給管と、 薬液を貯留する薬液貯留容器と、 開閉切換手段を介して上記洗浄液供給管と薬液貯留容器
とを接続する薬液供給管と、 上記洗浄液供給管内を流れる純水中に、上記薬液貯留容
器中の薬液の所定量を注入する薬液供給手段と、 上記洗浄槽内の洗浄液の温度を検出する温度検出手段
と、 上記温度検出手段からの検出信号に基づいて上記薬液供
給手段の薬液注入量を制御する制御手段と、を具備する
ことを特徴とする洗浄処理装置。5. A cleaning tank for storing a cleaning liquid and immersing an object in the cleaning liquid to clean the surface thereof, a cleaning liquid supply pipe connecting the cleaning tank and a pure water supply source, and storing a chemical liquid. A chemical solution storage container, a chemical solution supply tube for connecting the cleaning solution supply tube and the chemical solution storage container via opening / closing switching means, and a pure water flowing through the cleaning solution supply tube, a predetermined amount of the chemical solution in the chemical solution storage container. A liquid supply means for injecting, a temperature detection means for detecting a temperature of the cleaning liquid in the cleaning tank, and a control means for controlling a liquid injection amount of the liquid supply means based on a detection signal from the temperature detection means. A cleaning treatment device comprising:
理体を浸漬してその表面を洗浄する洗浄槽と、 上記洗浄槽と純水供給源とを接続する洗浄液供給管と、 薬液を貯留する薬液貯留容器と、 開閉切換手段を介して上記洗浄液供給管と薬液貯留容器
とを接続する薬液供給管と、 上記洗浄液供給管内を流れる純水中に、上記薬液貯留容
器中の薬液の所定量を注入する薬液供給手段と、 上記洗浄液供給管に介設される純水流量検出手段と、 上記純水量検出手段からの検出信号に基づいて上記薬液
供給手段の注入量を制御する制御手段と、を具備するこ
とを特徴とする洗浄処理装置。6. A cleaning tank for storing a cleaning liquid and immersing the object in the cleaning liquid to clean the surface thereof, a cleaning liquid supply pipe connecting the cleaning tank and a pure water supply source, and storing a chemical liquid. A chemical solution storage container, a chemical solution supply tube for connecting the cleaning solution supply tube and the chemical solution storage container via opening / closing switching means, and a pure water flowing through the cleaning solution supply tube, a predetermined amount of the chemical solution in the chemical solution storage container. A chemical solution supply means to be injected, a pure water flow rate detection means interposed in the cleaning liquid supply pipe, and a control means for controlling an injection amount of the chemical solution supply means based on a detection signal from the pure water amount detection means. A cleaning treatment device comprising:
いて、 上記洗浄槽を、洗浄液を貯留して被処理体を浸漬する内
槽と、この内槽の開口部の外方縁部を覆う外槽とで構成
し、 上記外槽の底部と、上記内槽の内に配設される洗浄液供
給部とを、循環管路にて接続し、 上記循環管路に、循環ポンプ，温度調整機構及びフィル
タを介設してなる、ことを特徴とする洗浄処理装置。7. The cleaning apparatus according to claim 5, wherein the cleaning tank covers an inner tank for storing a cleaning liquid and immersing the object to be processed, and an outer edge of an opening of the inner tank. A bottom portion of the outer tub and a cleaning liquid supply unit disposed in the inner tub are connected by a circulation pipe, and a circulation pump and a temperature adjusting mechanism are connected to the circulation pipe. And a filter provided with a filter.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26921597A JP3451567B2 (en) | 1997-09-17 | 1997-09-17 | Cleaning equipment |
| DE19840989A DE19840989A1 (en) | 1997-09-09 | 1998-09-08 | Object wet cleaning method for e.g. semiconductor wafer |
| US09/149,852 US6158447A (en) | 1997-09-09 | 1998-09-08 | Cleaning method and cleaning equipment |
| KR10-1998-0037119A KR100455904B1 (en) | 1997-09-09 | 1998-09-09 | Cleaning process and cleaning plant |
| US09/689,408 US6592678B1 (en) | 1997-09-09 | 2000-10-12 | Cleaning method and cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26921597A JP3451567B2 (en) | 1997-09-17 | 1997-09-17 | Cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1197405A true JPH1197405A (en) | 1999-04-09 |
| JP3451567B2 JP3451567B2 (en) | 2003-09-29 |
Family
ID=17469282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26921597A Expired - Fee Related JP3451567B2 (en) | 1997-09-09 | 1997-09-17 | Cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3451567B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001060573A (en) * | 1999-04-27 | 2001-03-06 | Applied Materials Inc | Semiconductor substrate cleaning system |
| CN116995003A (en) * | 2023-09-28 | 2023-11-03 | 威海奥牧智能科技有限公司 | Air pump-based chip etching cleaning solution internal circulation control system and method |
-
1997
- 1997-09-17 JP JP26921597A patent/JP3451567B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001060573A (en) * | 1999-04-27 | 2001-03-06 | Applied Materials Inc | Semiconductor substrate cleaning system |
| JP2010010718A (en) * | 1999-04-27 | 2010-01-14 | Applied Materials Inc | Semiconductor substrate cleaning system |
| CN116995003A (en) * | 2023-09-28 | 2023-11-03 | 威海奥牧智能科技有限公司 | Air pump-based chip etching cleaning solution internal circulation control system and method |
| CN116995003B (en) * | 2023-09-28 | 2023-12-15 | 威海奥牧智能科技有限公司 | Air pump-based chip etching cleaning solution internal circulation control system and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3451567B2 (en) | 2003-09-29 |
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