JPH1190809A - Polishing pad - Google Patents
Polishing padInfo
- Publication number
- JPH1190809A JPH1190809A JP24670997A JP24670997A JPH1190809A JP H1190809 A JPH1190809 A JP H1190809A JP 24670997 A JP24670997 A JP 24670997A JP 24670997 A JP24670997 A JP 24670997A JP H1190809 A JPH1190809 A JP H1190809A
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- polishing
- nonwoven fabric
- fibers
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Nonwoven Fabrics (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明発明は、半導体ウエハ
ー用、液晶ガラス用、ハードディスク用等の精密研磨用
研磨パッドに関するものである。更に詳しくは、半導体
デバイスの製造工程における多層配線形成工程で用いら
れる化学的機械研磨（以下、「ＣＭＰ」という。）用の
研磨パッドに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing pad for precision polishing for a semiconductor wafer, a liquid crystal glass, a hard disk or the like. More specifically, the present invention relates to a polishing pad for chemical mechanical polishing (hereinafter, referred to as “CMP”) used in a multilayer wiring forming step in a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】従来、精密研磨用研磨パッドに関して
は、いくつかの提案がある。2. Description of the Related Art There have been several proposals for polishing pads for precision polishing.
【０００３】例えば、特開平２−２３２１７３号公報、
特開平４−１１５８７５号公報には、それぞれ半導体ウ
エハー用、板ガラス製品用の研磨パッドとしてポリウレ
タンの発泡体からなる研磨パッドが記載されている。研
磨パッドの一般的要求特性としては、研磨速度の速さ、
研磨時の安定性、研磨精度として面内均一性(平坦性)が
挙げられるが、ＣＭＰ用研磨パッドの場合、特に研磨精
度として面内均一性(平坦性)が重要となる。該平坦性を
満足するためにはパッドを硬くすることが必要とされる
ことから、従来、酸化膜のＣＭＰ用研磨パッドとして
は、硬いポリウレタン樹脂の発泡シートよりなる研磨パ
ッドが使用されている。しかしながら、該研磨パッド
は、長時間研磨していると、研磨するときに使用する研
磨剤や研磨くずが該研磨パッド表面の独立気泡の穴につ
まってしまい、数回使用するたびに該研磨パッド表面を
ダイアモンド等で削りドレッシングしなければならない
という不便があった。また、この用途には、レーヨンか
らなる不織布に合成樹脂を含浸させた研磨パッドも使用
されているが、該研磨パッドは、不織布の湿潤強度が弱
いため、長時間の使用に絶えられず、更に、硬度が低
く、半導体ウエハーの平坦性を十分に満足することはで
きなかった。一方、特開平３−５９１５７号公報には、
芳香族ポリアミド繊維からなる不織布を熱収縮硬化させ
た研磨パッドが記載されている。しかしながら、該研磨
パッドは、硬度（ＪＩＳ Ｋ６３０１ Ａ型）８２°で
あり、半導体ウエハーの平坦性を満足するには不十分で
あった。[0003] For example, Japanese Patent Application Laid-Open No. 2-232173,
JP-A-4-115875 describes a polishing pad made of a polyurethane foam as a polishing pad for a semiconductor wafer and a flat glass product, respectively. The general required characteristics of the polishing pad include high polishing rate,
In-plane uniformity (flatness) is mentioned as stability and polishing accuracy during polishing. In the case of a polishing pad for CMP, in-plane uniformity (flatness) is particularly important as polishing accuracy. Since it is necessary to harden the pad in order to satisfy the flatness, a polishing pad made of a foamed sheet of a hard polyurethane resin is conventionally used as a polishing pad for CMP of an oxide film. However, if the polishing pad is polished for a long time, the polishing agent or polishing debris used for polishing is clogged in the holes of the closed cells on the surface of the polishing pad. There was an inconvenience that the surface had to be dressed with diamond or the like. In this application, a polishing pad obtained by impregnating a synthetic resin into a nonwoven fabric made of rayon is also used.However, since the polishing pad has a low wet strength, it cannot be used for a long time. And the hardness was low, and the flatness of the semiconductor wafer could not be sufficiently satisfied. On the other hand, JP-A-3-59157 discloses that
A polishing pad in which a nonwoven fabric made of an aromatic polyamide fiber is heat-shrink-hardened is described. However, the polishing pad had a hardness (JIS K6301 A type) of 82 °, which was insufficient to satisfy the flatness of the semiconductor wafer.
【０００４】[0004]
【発明が解決しようとする課題】そこで、本発明者ら
は、半導体ウエハー用、液晶ガラス用、ハードディスク
用等の精密研磨用研磨パッド、特にＣＭＰ用研磨パッド
に関して、十分な硬度と湿潤強度を有し、かつ、ダイア
モンド砥石を用いて研削をおこなうドレッシングを行わ
なくても、剛毛ブラッシング等の簡易ドレッシングのみ
で目詰まりを解消することができる研磨パッドを提供す
ることを目的に鋭意検討を重ねた結果、本発明を見出
し、精密研磨用、特にＣＭＰ用として優れた研磨パッド
を完成するに至った。Accordingly, the present inventors have developed a polishing pad for precision polishing such as a semiconductor wafer, a liquid crystal glass, and a hard disk, particularly a polishing pad for CMP, which has sufficient hardness and wet strength. In addition, the results of intensive studies aimed at providing a polishing pad that can eliminate clogging with only a simple dressing such as bristle brushing without performing dressing that performs grinding using a diamond whetstone The present invention has been found, and an excellent polishing pad for precision polishing, particularly for CMP has been completed.
【０００５】[0005]
【課題を解決するための手段】すなわち、本発明は、不
織布からなる研磨パッドにおいて、研磨パッド表面の硬
度が８５°以上９９°以下であることを特徴とする研磨
パッドである。That is, the present invention relates to a polishing pad made of a non-woven fabric, wherein the hardness of the polishing pad surface is 85 ° or more and 99 ° or less.
【０００６】[0006]
【発明の実施の形態】以下本発明について、詳細に説明
する。本発明の研磨パッドを構成する不織布は、繊維か
らなるものであれば特に限定はないが、ＣＭＰ用研磨パ
ッドに求められる平坦性を高めるために、得られる研磨
パッド表面の硬度（ＪＩＳ Ｋ６３０１ Ａ型）を８５
°以上９９°以下、好ましくは８８°以上９８°以下と
しなければならないこと、および、研磨スラリーの強酸
・強アルカリ等に耐えられる耐薬品性を必要とすること
から、合成繊維からなることが好ましく、熱融着繊維と
非熱融着繊維とからなることが特に好ましい。ここで、
用いられる合成繊維の成分としては、繊維形成性の樹脂
であれば特に限定はないが、例えば、ポリエステル、ポ
リアミド、ポリオレフィン等が挙げられる。熱融着繊維
とは、非熱融着繊維に比較して融点が低ければ特に限定
はないが、融点１８０℃以下の繊維形成性の樹脂である
ことが好ましい。また、繊維の構造としては、例えば、
繊維全体が一種類の低融点樹脂からなるものであっても
よいし、二種以上からなる芯鞘型複合繊維の構造をして
おり、その鞘の部分のみが低融点樹脂からなるものであ
ってもよい。低融点の繊維形成性樹脂としては、共重合
したポリエステルコポリマー、ポリアミドコポリマー、
ポリエチレン、ポリプロピレン等が挙げられるが、共重
合したポリエステルコポリマーを用いることが好まし
い。非熱融着繊維としては、ポリエステル繊維、ポリア
ミド繊維、ポリウレタン繊維等が挙げられるが、ポリエ
ステル繊維を用いることが好ましい。また、非熱融着繊
維として熱収縮性を有する繊維を用いることが、不織布
の密度および硬度を調整する上で好ましい。ここで、用
いる熱収縮性繊維としては、７０℃の温水中で３０％以
上９０％以下収縮する繊維であることが好ましく、３５
％以上７０％以下収縮する繊維であることが特に好まし
い。更に、ポリエステル繊維を用いる場合は、研磨剤と
の馴染みを良くするため、親水化処理を施し、吸水速度
を高めることが好ましい。不織布を構成する上で、該熱
融着繊維と該非熱融着繊維との割合は、１０〜５０重量
％：５０〜９０重量％であることが好ましい。該熱融着
繊維の割合が１０重量％より少ないと、後に行う熱処理
を行っても得られる研磨パッドの硬度が不充分となり、
該熱融着繊維の割合が５０重量％より多いと、熱処理の
際に融着が進みすぎ研磨スラリーの通液性が悪くなり、
研磨安定性が劣る。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The nonwoven fabric constituting the polishing pad of the present invention is not particularly limited as long as it is made of fiber. However, in order to enhance the flatness required for the polishing pad for CMP, the hardness of the obtained polishing pad surface (JIS K6301 A type) ) To 85
° or more and 99 ° or less, preferably 88 ° or more and 98 ° or less, and because it requires chemical resistance that can withstand the strong acid, strong alkali, etc. of the polishing slurry, it is preferable to be made of synthetic fibers It is particularly preferred that the heat-fusible fibers and the non-heat-fusible fibers are used. here,
The component of the synthetic fiber used is not particularly limited as long as it is a fiber-forming resin, and examples thereof include polyester, polyamide, and polyolefin. The heat-fused fiber is not particularly limited as long as it has a lower melting point than the non-heat-fused fiber, but is preferably a fiber-forming resin having a melting point of 180 ° C or lower. Also, as the structure of the fiber, for example,
The whole fiber may be composed of one kind of low melting point resin, or may have a structure of a core-sheath type composite fiber composed of two or more kinds, and only the sheath part is composed of the low melting point resin. You may. As the low melting point fiber-forming resin, copolymerized polyester copolymer, polyamide copolymer,
Polyethylene, polypropylene and the like are mentioned, but it is preferable to use a copolymerized polyester copolymer. Examples of the non-heat-fused fiber include polyester fiber, polyamide fiber, polyurethane fiber and the like, and it is preferable to use polyester fiber. Further, it is preferable to use a heat-shrinkable fiber as the non-heat-fused fiber in order to adjust the density and hardness of the nonwoven fabric. Here, the heat-shrinkable fiber used is preferably a fiber that shrinks by 30% or more and 90% or less in hot water at 70 ° C.
% Or more and 70% or less is particularly preferable. Further, when polyester fibers are used, it is preferable to increase the water absorption rate by performing a hydrophilic treatment in order to improve the compatibility with the abrasive. In forming the nonwoven fabric, the ratio between the heat-fused fibers and the non-heat-fused fibers is preferably 10 to 50% by weight: 50 to 90% by weight. When the proportion of the heat-fused fiber is less than 10% by weight, the hardness of the polishing pad obtained even after heat treatment performed later becomes insufficient,
If the proportion of the heat-fused fiber is more than 50% by weight, the fusion will proceed too much during the heat treatment, and the liquid permeability of the polishing slurry will deteriorate,
Poor polishing stability.
【０００７】上記繊維から不織布を作成する方法は、例
えば、ニードルパンチ法、スパンボンド法、スパンレー
ス法，ケミカルボンド法等、従来公知の方法が用いられ
る。例えば、上記熱融着繊維と非熱融着繊維とからなる
不織布を作成するには、この２種類の繊維を適当な長さ
にカットした短繊維を混綿し、ローラーカード，フラッ
トカード等を使用して開綿し、紡出した繊維を機械的に
積層するか、空気流を使って積層する。その後、ニード
ルロッカー等によりバーブ付針でパンチングするか、高
圧水流を利用して絡合処理し、不織布を得る。かかる不
織布の見掛け密度は、０．２５以上０．５以下であるこ
とが好ましく、０．３以上０．４以下であることが特に
好ましい。不織布の見掛け密度が０．２５より小さいと
得られた不織布の硬度が低くなり、０．５より大きいと
得られた不織布の目がつまりすぎて通液性が悪くなり、
スラリーの保持あるいは放液が悪くなる。ここで、見掛
け密度とは、不織布の目付(単位面積当たりの重量)を厚
さで除して算出する。As a method for producing a nonwoven fabric from the above fibers, a conventionally known method such as a needle punch method, a spun bond method, a spun lace method, a chemical bond method and the like are used. For example, in order to prepare a nonwoven fabric composed of the above-mentioned heat-fused fibers and non-heat-fused fibers, short fibers obtained by cutting these two types of fibers into appropriate lengths are mixed, and a roller card, a flat card, or the like is used. Then, the spun fibers are laminated mechanically or using an air stream. Thereafter, punching is performed with a needle with a barb using a needle rocker or the like, or entanglement treatment is performed using a high-pressure water stream to obtain a nonwoven fabric. The apparent density of such a nonwoven fabric is preferably from 0.25 to 0.5, particularly preferably from 0.3 to 0.4. If the apparent density of the nonwoven fabric is less than 0.25, the hardness of the obtained nonwoven fabric is low, and if it is more than 0.5, the eyes of the obtained nonwoven fabric are too clogged and the liquid permeability is poor,
Poor retention or discharge of slurry. Here, the apparent density is calculated by dividing the basis weight (weight per unit area) of the nonwoven fabric by the thickness.
【０００８】次いで、得られた不織布に熱処理を施す。
熱処理は、プレス機あるいは熱ローラー等で圧力を加え
る方法、あるいは不織布を加熱した後、ローラーで加圧
する方法等が用いられる。不織布の表面および内部を適
当な温度で熱加圧することにより、用途に応じた所望の
基布を得ることが可能となる。熱処理温度は、例えば、
７０〜２００℃が好ましく、１００〜１８０℃が特に好
ましい。熱処理時間は、３０秒〜５分間程度である。か
かる熱処理は、一段で行っても、二段以上の多段で行っ
てもよい。Next, the obtained nonwoven fabric is subjected to a heat treatment.
For the heat treatment, a method of applying pressure with a press or a heat roller or the like, or a method of heating the nonwoven fabric and then pressing with a roller is used. By subjecting the surface and the inside of the nonwoven fabric to heat and pressure at an appropriate temperature, it is possible to obtain a desired base fabric according to the application. The heat treatment temperature is, for example,
70-200 ° C is preferable, and 100-180 ° C is particularly preferable. The heat treatment time is about 30 seconds to 5 minutes. Such heat treatment may be performed in one stage or in two or more stages.
【０００９】得られた不織布には、親水性を付与するこ
とが好ましい。ＣＭＰは、研磨スラリーを用いるため水
に濡れた状態で行われ、不織布と研磨スラリーとの馴染
みを良くするため不織布の吸水速度を挙げることが好ま
しい。ここで、不織布の吸水速度を挙げるため、用いら
れる不織布に親水性処理を行うが、用いられる親水性処
理剤としては、例えば、被研磨物であるウエハーを金属
汚染しないノニオン性のもの等が挙げられる。具体的に
は、アルキルおよびアリルポリオキシエチレンエ−テ
ル、アルキルアリルホルムアルデヒド縮合ポリオキシエ
チレンエ−テル、ポリオキシエチレンポリオキシプロピ
ルアルキルエ−テル、グリセリンエステルのポリオキシ
エチレンエ−テル、ポリエチレングリコ−ル脂肪酸エス
テル、ジメチルポリシロキサン−ポリオキシアルキレン
共重合体等が好ましく挙げられる。不織布に該処理を施
す方法としては、例えば、不織布を親水性処理剤に含浸
し、次いでニップロールで絞る方法、あるいは不織布に
メッシュロールで親水性処理剤を塗布する方法等が好ま
しく用いられる。該処理を行った後の不織布の吸水速度
は、パッド表面に研磨スラリーを１ミリリットル落とし
た場合の吸収時間が１秒以上６０秒以内であることが好
ましく、１５秒以上３０秒以内であることが特に好まし
い。一般的な研磨工程では、研磨スラリーをパッド上に
流しはじめてから約１分以内に研磨が開始されるので、
吸収時間は早いほど好ましい。It is preferable to impart hydrophilicity to the obtained nonwoven fabric. The CMP is performed in a state of being wet with water because a polishing slurry is used, and it is preferable to increase the water absorption rate of the nonwoven fabric in order to improve the familiarity between the nonwoven fabric and the polishing slurry. Here, in order to increase the water absorption rate of the nonwoven fabric, the nonwoven fabric used is subjected to hydrophilic treatment. Examples of the hydrophilic treatment agent used include nonionic materials that do not contaminate the wafer to be polished. Can be Specifically, alkyl and allyl polyoxyethylene ethers, alkyl allyl formaldehyde condensed polyoxyethylene ethers, polyoxyethylene polyoxypropyl alkyl ethers, polyoxyethylene ethers of glycerin esters, polyethylene glycol- Fatty acid esters, dimethylpolysiloxane-polyoxyalkylene copolymers, and the like. As a method of applying the treatment to the nonwoven fabric, for example, a method of impregnating the nonwoven fabric with a hydrophilic treatment agent and then squeezing with a nip roll, or a method of applying the hydrophilic treatment agent to the nonwoven fabric with a mesh roll is preferably used. The water absorption rate of the nonwoven fabric after the treatment is preferably such that the absorption time when the polishing slurry is dropped on the pad surface by 1 milliliter is preferably 1 second to 60 seconds, and more preferably 15 seconds to 30 seconds. Particularly preferred. In a general polishing process, polishing is started within about one minute after the polishing slurry starts flowing on the pad.
The faster the absorption time, the better.
【００１０】更に、本発明の不織布は、湿潤状態での長
時間の使用に耐えるため、湿潤強度の優れたものである
ことが好ましい。Furthermore, the nonwoven fabric of the present invention preferably has excellent wet strength in order to withstand long-term use in a wet state.
【００１１】また、本発明では、不織布表面にロ−ルと
の滑りを良くする、あるいは研磨パッドの面平滑性を良
くする等の目的のため、ポリマ−溶液をメッシュロ−ル
等で塗布しても良い。 本発明は、上記不織布を用い
て、裏面への粘着剤テープの積層や、所定の円板サイズ
に裁断する等の後加工を行い、研磨パッドとする。ここ
で、得られた研磨パッド表面の硬度（ＪＩＳ Ｋ６３０
１ Ａ型）は８５°以上９９°以下、好ましくは８８°
以上９８°以下である。また、該研磨パッドは、その製
造工程の途中、例えば、不織布を構成する繊維の段階、
あるいは不織布を製造した段階等で、親水化処理を施
し、得られた研磨パッドの吸水速度を、１秒／ｍｌ〜６
０秒／ｍｌとすることが好ましく、１５秒／ｍｌ〜４０
秒／ｍｌとすることが特に好ましい。In the present invention, a polymer solution is applied with a mesh roll or the like for the purpose of improving the slip with the roll on the surface of the nonwoven fabric or improving the surface smoothness of the polishing pad. Is also good. In the present invention, a polishing pad is obtained by performing post-processing such as lamination of an adhesive tape on the back surface or cutting into a predetermined disc size using the nonwoven fabric. Here, the hardness of the obtained polishing pad surface (JIS K630)
1A type) is 85 ° or more and 99 ° or less, preferably 88 °
Not less than 98 °. Further, the polishing pad is in the middle of the manufacturing process, for example, the stage of the fiber constituting the nonwoven fabric,
Alternatively, a hydrophilic treatment is performed at the stage of manufacturing the nonwoven fabric or the like, and the water absorption rate of the obtained polishing pad is 1 second / ml to 6 seconds.
0 sec / ml, preferably 15 sec / ml to 40 sec.
It is particularly preferred that the rate be set to seconds / ml.
【００１２】該研磨パッドは、更に必要に応じてパッド
表面にパンチング(穴あけ)加工、グルービング(溝切り)
加工等の２次加工を施してもよい。The polishing pad may be further subjected to punching (drilling) and grooving (grooving) on the pad surface as necessary.
Secondary processing such as processing may be performed.
【００１３】該研磨パッドは、それ単独でも充分な研磨
速度を達成することができるが、更に高速の研磨速度を
達成するために、特開平６−２１０２８号公報、特開平
６−７７１８５号公報に記載されているように、基材の
下層に弾性層を積層して研磨パッドを作成してもよい。
弾性層を積層することは、被研磨物および研磨液膜を介
して、研磨パッドに伝わる研磨圧力を圧接面内におい
て、垂直かつ等分に伝え、研磨パッド自体の圧力変形を
できるだけ小さく、かつ、均一に起こすことができると
いう点で、多くの研磨量を達成し、ウエハーの面ダレお
よびフチダレを防ぐのに好ましい。ここで用いられる弾
性層としては、ウレタンフォーム材料、不織布、ウレタ
ンを含浸させた不織布等が好ましく用いられる。Although the polishing pad alone can achieve a sufficient polishing rate by itself, it has been disclosed in Japanese Patent Application Laid-Open Nos. 6-21028 and 6-77185 in order to achieve a higher polishing rate. As described, the polishing pad may be made by laminating an elastic layer below the substrate.
By laminating the elastic layer, the polishing pressure transmitted to the polishing pad is vertically and equally transmitted within the pressure contact surface through the polishing object and the polishing liquid film, and the pressure deformation of the polishing pad itself is minimized, and It is preferable to achieve a large amount of polishing and to prevent the wafer from sagging and marginal in that it can be uniformly generated. As the elastic layer used here, a urethane foam material, a nonwoven fabric, a nonwoven fabric impregnated with urethane, or the like is preferably used.
【００１４】[0014]
【実施例】以下に実施例を示し、本発明を説明するが、
本発明はこれらの実施例に限定されるものではない。な
お、実施例中以下の値は、下記測定方法によって求め
た。 （１）不織布の見掛け密度 不織布の目付(単位面積あたりの重量)を厚さを除して算
出した。 （２）研磨パッドの硬度 スプリング式硬さ試験Ａ型を用いて、研磨パッド１枚を
用いて測定する以外はＪＩＳ Ｋー６３０１に準拠して
行った。 （３）湿潤強度 用意したサンプルを１分間水道水につけた後、ＪＩＳ
Ｋ−６５５０に準拠して引っ張り強度を測定した。 （４）吸水速度 研磨パッドの表面に、水１ｍｌを落としたときの吸水時
間を測定した。The present invention will be described below with reference to examples.
The present invention is not limited to these examples. In the examples, the following values were determined by the following measurement methods. (1) Apparent density of nonwoven fabric The basis weight (weight per unit area) of the nonwoven fabric was calculated by dividing the thickness. (2) Hardness of polishing pad A spring-type hardness test was performed in accordance with JIS K-6301 except that measurement was performed using one polishing pad using a type A spring test. (3) Wet strength After immersing the prepared sample in tap water for 1 minute, JIS
The tensile strength was measured according to K-6550. (4) Water Absorption Rate The water absorption time when 1 ml of water was dropped on the surface of the polishing pad was measured.
【００１５】［実施例１］ ・熱融着繊維 イソフタル酸成分を３５モル％共重合させた融点１３０
℃のポリエチレンテレフタレート共重合体を鞘部、固有
粘度０．６のポリエチレンテレフタレートを芯部とした
単糸繊度４デニール、繊維長５１ｍｍの芯鞘型複合繊維
を、熱融着繊維として使用した。Example 1 Heat-fused fiber Melting point 130 obtained by copolymerizing 35% by mole of isophthalic acid component
A core-sheath type composite fiber having a denier of 4 denier and a fiber length of 51 mm, having a sheath made of polyethylene terephthalate copolymer at ℃ and a core made of polyethylene terephthalate having an intrinsic viscosity of 0.6, was used as the heat-fused fiber.
【００１６】・非熱融着繊維 固有粘度０．６のポリエチレンテレフタレートを２９０
℃で溶融紡糸して得た未延伸糸を、６３℃の温水溶中で
２．３倍に延伸し、次いで油剤を付与した後、押込型捲
縮機によってクリンプをかけ、得られた単糸繊度２．０
デニールの繊維を繊維長５１ｍｍにカットした。得られ
た繊維は、７０℃の温水浴中に２分間浸漬したところ収
縮率５０％であった。この繊維を非熱融着繊維として使
用した。Non-heat-fused fiber: 290 polyethylene terephthalate having an intrinsic viscosity of 0.6
The undrawn yarn obtained by melt-spinning at a temperature of 63 ° C. is drawn 2.3 times in a warm water solution of 63 ° C., and after applying an oil agent, it is crimped by a press-type crimping machine. Fineness 2.0
The denier fiber was cut to a fiber length of 51 mm. When the obtained fiber was immersed in a 70 ° C. warm water bath for 2 minutes, the shrinkage was 50%. This fiber was used as a non-fusible fiber.
【００１７】・不織布の製造 上記熱融着繊維と非熱融着繊維とを３３／６７の重量比
率で混合し、ローラーカードにかけて、ウエブとなし、
キックアップバーブを９個有する針を装着したニードル
ロッカールームで、８００本／ｃｍ2の打ち込み数でパ
ンチングした。続いて、６９℃の温水に１分間浸漬し、
１６０℃の加熱ロールを２分間加熱し、目付６００ｇ／
ｍ2、見掛密度０．３４の緻密な不織布を得た。Production of non-woven fabric The above-mentioned heat-fusible fibers and non-heat-fusible fibers are mixed at a weight ratio of 33/67, and are rolled to form a web.
In a needle locker room equipped with a needle having nine kick-up barbs, punching was performed at a rate of 800 needles / cm 2 . Subsequently, it was immersed in hot water of 69 ° C. for 1 minute,
A heating roll at 160 ° C. was heated for 2 minutes, and a basis weight of 600 g /
A dense nonwoven fabric having m 2 and an apparent density of 0.34 was obtained.
【００１８】・研磨パッドの製造 得られた不織布に、ポリウレタン樹脂と親水性ポリシリ
コンオイル溶液とをメッシュロールにて塗布し、該表面
を１６０℃に加熱したロールに接触して２分間加熱処理
を行った後、両面粘着テープを裏面に積層して研磨パッ
ドを得た。該表面の硬度は９２°、吸水速度３０秒／ｍ
ｌ、湿潤強度は２２．４ｋｇ／ｃｍであった。該研磨パ
ッドを用いて、半導体ウエハーのＣＭＰを行ったとこ
ろ、従来の発泡硬質ポリウレタンの研磨パッドに比べ
て、研磨速度は、１．５倍であった。また、研磨パッド
表面をダイアモンドで研削するドレッシングは不要で、
ナイロン剛毛糸によるブラッシングのみで安定した研磨
加工を継続できた。更に、被研磨物である半導体ウエハ
ーの研磨平坦性も良好であり、研磨パッドの寿命も十分
であった。Preparation of Polishing Pad A polyurethane resin and a hydrophilic polysilicon oil solution are applied to the obtained nonwoven fabric with a mesh roll, and the surface is brought into contact with a roll heated to 160 ° C. to perform a heat treatment for 2 minutes. After that, a double-sided adhesive tape was laminated on the back surface to obtain a polishing pad. The surface has a hardness of 92 ° and a water absorption rate of 30 seconds / m.
1, wet strength was 22.4 kg / cm. When a semiconductor wafer was subjected to CMP using the polishing pad, the polishing rate was 1.5 times that of a conventional polishing pad made of foamed hard polyurethane. Also, dressing to grind the polishing pad surface with diamond is unnecessary,
Stable polishing could be continued only by brushing with nylon bristle yarn. Furthermore, the polishing flatness of the semiconductor wafer to be polished was good, and the life of the polishing pad was sufficient.
【００１９】［実施例２］実施例１で用いたポリウレタ
ン樹脂と親水性ポリシリコンオイルを塗布した不織布
を、プレス面温度１１０℃に調節された平板プレス機に
て４０ｋｇf／ｃｍ2の圧力で、９０秒間加熱加圧処理を
行い、表面の硬度９５°、吸水速度３５秒／ｍｌ、湿潤
強度２４．２ｋｇ／ｃｍである研磨パッドを得た。得ら
れた研磨パッドを用いて半導体ウエハーのＣＭＰを行っ
たところ、従来の発泡硬質ポリウレタンの研磨パッドに
比べて、研磨速度は、１．７倍であった。また、研磨パ
ッド表面を研削するドレッシングは不要で、ナイロン剛
毛糸によるブラッシングのみで安定した研磨加工を継続
できた。被研磨物である半導体ウエハーの研磨平坦性も
良好であった。Example 2 The nonwoven fabric coated with the polyurethane resin and the hydrophilic polysilicon oil used in Example 1 was pressed at a pressure of 40 kgf / cm 2 by a flat plate press adjusted to a press surface temperature of 110 ° C. Heat and pressure treatment was performed for 90 seconds to obtain a polishing pad having a surface hardness of 95 °, a water absorption rate of 35 seconds / ml, and a wet strength of 24.2 kg / cm. When a semiconductor wafer was subjected to CMP using the obtained polishing pad, the polishing rate was 1.7 times higher than that of the conventional foamed hard polyurethane polishing pad. In addition, dressing for grinding the polishing pad surface was unnecessary, and stable polishing could be continued only by brushing with nylon bristle yarn. The polishing flatness of the semiconductor wafer to be polished was also good.
【００２０】［比較例１］実施例１で用いたポリウレタ
ン樹脂と親水性ポリシリコンオイルを塗布した不織布
を、表面を６０℃に加熱したロールにして２分間加熱処
理を行い、表面の硬度が８０°、吸水速度４０秒／ｍ
ｌ、湿潤強度２０．５ｋｇ／ｃｍである研磨パッドを得
た。得られた研磨パッドを用いて、半導体ウエハーのＣ
ＭＰを行ってみると、従来の発泡硬質ポリウレタンの研
磨パッドに比べて、研磨速度は、０．４倍であった。[Comparative Example 1] The nonwoven fabric coated with the polyurethane resin and hydrophilic polysilicon oil used in Example 1 was subjected to a heat treatment for 2 minutes using a roll whose surface was heated to 60 ° C, and the surface hardness was 80%. °, water absorption speed 40 sec / m
1) A polishing pad having a wet strength of 20.5 kg / cm was obtained. Using the obtained polishing pad, C of the semiconductor wafer
When the MP was performed, the polishing rate was 0.4 times higher than that of a conventional polishing pad made of foamed hard polyurethane.
【００２１】［比較例２］レーヨンからなる不織布に合
成樹脂を含浸させた、表面の硬度が７９°、吸水速度６
４秒／ｍｌ、湿潤強度０．１８ｋｇ／ｃｍの研磨パッド
を用いて、半導体ウエハーのＣＭＰを行った。その結
果、ウエハー５０枚の研磨で破れ、パッドの寿命が実用
上の要求に耐えられないものでありことがわかった。Comparative Example 2 A nonwoven fabric made of rayon was impregnated with a synthetic resin, the surface hardness was 79 °, and the water absorption rate was 6
The semiconductor wafer was subjected to CMP using a polishing pad having a wet strength of 0.18 kg / cm for 4 seconds / ml. As a result, it was found that the pad was broken by polishing 50 wafers, and the life of the pad was not enough to meet practical requirements.
【００２２】[0022]
【発明の効果】本発明によれば、半導体ウエハー用、液
晶ガラス用、ハードディスク用等の精密研磨用、特にＣ
ＭＰ用研磨パッドとして十分な硬度と湿潤強度を有し、
かつ、簡易ドレッシングを行うことによって簡単に目詰
まりを解消することが可能な優れた研磨パッドを提供す
ることができる。According to the present invention, precision polishing for semiconductor wafers, liquid crystal glass, hard disks, etc.,
Having sufficient hardness and wet strength as a polishing pad for MP,
In addition, it is possible to provide an excellent polishing pad capable of easily eliminating clogging by performing simple dressing.
Claims (8)
磨パッド表面の硬度が８５°以上９９°以下であること
を特徴とする研磨パッド。1. A polishing pad comprising a nonwoven fabric, wherein the hardness of the polishing pad surface is 85 ° or more and 99 ° or less.
からなる不織布である請求項１記載の研磨パッド。2. The polishing pad according to claim 1, wherein the non-woven fabric is a non-woven fabric comprising heat-fused fibers and non-heat-fused fibers.
繊維との割合が、１０〜５０重量％：５０〜９０重量％
である請求項２記載の研磨パッド。3. The ratio of the heat-fusible fibers and the non-heat-fusible fibers constituting the nonwoven fabric is 10 to 50% by weight: 50 to 90% by weight.
The polishing pad according to claim 2, which is:
％以上９０％以下収縮する繊維である請求項２または３
記載の研磨パッド。4. The method according to claim 1, wherein the non-heat-fused fibers are in a hot water at 70 ° C.
% Or more and 90% or less.
The polishing pad as described.
０．５以下である請求項１〜４いずれか１項記載の研磨
パッド。5. The polishing pad according to claim 1, wherein the apparent density of the nonwoven fabric is 0.25 or more and 0.5 or less.
６０秒／ｍｌである請求項１〜５いずれか１項記載の研
磨パッド。6. The polishing pad has a water absorption rate of 1 second / ml or more.
The polishing pad according to any one of claims 1 to 5, wherein the polishing rate is 60 seconds / ml.
１〜６いずれか１項記載の研磨パッド。7. The polishing pad according to claim 1, wherein the polishing pad is for precision polishing.
る請求項１〜７いずれか１項記載の研磨パッド。8. The polishing pad according to claim 1, wherein said fine polishing is for chemical mechanical polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24670997A JP3953150B2 (en) | 1997-09-11 | 1997-09-11 | Polishing pad manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24670997A JP3953150B2 (en) | 1997-09-11 | 1997-09-11 | Polishing pad manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1190809A true JPH1190809A (en) | 1999-04-06 |
| JP3953150B2 JP3953150B2 (en) | 2007-08-08 |
Family
ID=17152482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24670997A Expired - Fee Related JP3953150B2 (en) | 1997-09-11 | 1997-09-11 | Polishing pad manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3953150B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001045899A1 (en) * | 1999-12-22 | 2001-06-28 | Toray Industries, Inc. | Polishing pad, and method and apparatus for polishing |
| JP2001232554A (en) * | 2000-02-22 | 2001-08-28 | Toyobo Co Ltd | Polishing pad and method for manufacturing thereof |
| JP2006231437A (en) * | 2005-02-23 | 2006-09-07 | Nitta Haas Inc | Polishing cloth and its manufacturing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8546260B2 (en) * | 2008-09-04 | 2013-10-01 | Innopad, Inc. | Fabric containing non-crimped fibers and methods of manufacture |
-
1997
- 1997-09-11 JP JP24670997A patent/JP3953150B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001045899A1 (en) * | 1999-12-22 | 2001-06-28 | Toray Industries, Inc. | Polishing pad, and method and apparatus for polishing |
| US6953388B2 (en) | 1999-12-22 | 2005-10-11 | Toray Industries, Inc. | Polishing pad, and method and apparatus for polishing |
| JP2001232554A (en) * | 2000-02-22 | 2001-08-28 | Toyobo Co Ltd | Polishing pad and method for manufacturing thereof |
| JP4591980B2 (en) * | 2000-02-22 | 2010-12-01 | 東洋ゴム工業株式会社 | Polishing pad and manufacturing method thereof |
| JP2006231437A (en) * | 2005-02-23 | 2006-09-07 | Nitta Haas Inc | Polishing cloth and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3953150B2 (en) | 2007-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5877152B2 (en) | Polishing pad | |
| KR101146966B1 (en) | Polishing pad and process for production of polishing pad | |
| TWI293911B (en) | Polishing pad | |
| JP5143518B2 (en) | Fiber composite polishing pad | |
| US20020013984A1 (en) | Abrasive sheet for texturing and method of producing same | |
| EP2316614A1 (en) | Polishing pad and method for manufacturing the polishing pad | |
| JPWO2011052173A1 (en) | Polishing pad and chemical mechanical polishing method | |
| KR20150116876A (en) | Rigid sheet and process for manufacturing rigid sheet | |
| WO2007040103A1 (en) | Abrasive cloth and process for production thereof | |
| JPH1199479A (en) | Polishing pad | |
| JP2010064153A (en) | Polishing pad | |
| JP7111609B2 (en) | Fiber composite polishing pad and method for polishing glass-based substrate using the same | |
| JP3953150B2 (en) | Polishing pad manufacturing method | |
| TWI296297B (en) | Leather-like sheets and method for producing them | |
| JP2008144287A (en) | Polishing cloth and method for producing the same | |
| JPH0356870B2 (en) | ||
| JP2002079472A (en) | Abrasive sheet for working texture and manufacturing method for the same | |
| JP4455161B2 (en) | Nonwoven fabric for polishing pad and polishing pad | |
| JP5421628B2 (en) | Abrasive cloth and method for producing abrasive cloth | |
| JPH1199480A (en) | Polishing pad | |
| JP2013169627A (en) | Polishing pad substrate | |
| JPH0959395A (en) | Polishing pad | |
| JP4423922B2 (en) | Polishing cloth | |
| JP2003266298A (en) | Sheet for polishing | |
| JP6405654B2 (en) | Sheet material and method for producing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20040528 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040601 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20040528 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050816 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050823 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051020 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061003 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061130 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070403 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070424 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100511 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110511 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110511 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120511 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130511 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130511 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140511 Year of fee payment: 7 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |