JPH1187292A - Substrate-processing method and device - Google Patents
Substrate-processing method and deviceInfo
- Publication number
- JPH1187292A JPH1187292A JP23564597A JP23564597A JPH1187292A JP H1187292 A JPH1187292 A JP H1187292A JP 23564597 A JP23564597 A JP 23564597A JP 23564597 A JP23564597 A JP 23564597A JP H1187292 A JPH1187292 A JP H1187292A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing
- processing liquid
- pure water
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハや液
晶表示器用のガラス基板、フォトマスク用のガラス基
板、光ディスク用の基板などの基板を回転させながら、
所定の第１処理液供給時間の間第１の処理液を基板に供
給して第１の処理を行い、それに続いて所定の第２処理
液供給時間の間第２の処理液を基板に供給して第２の処
理を行う基板処理方法及びその方法を実施する基板処理
装置に関する。BACKGROUND OF THE INVENTION The present invention relates to a method for rotating a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a substrate for an optical disk.
The first processing liquid is supplied to the substrate for a predetermined first processing liquid supply time to perform the first processing, and subsequently, the second processing liquid is supplied to the substrate for a predetermined second processing liquid supply time. And a substrate processing apparatus for performing the method.
【０００２】[0002]
【従来の技術】例えば、基板の洗浄工程では、図１２に
示すように、スピンチャック１００に基板Ｗを保持して
回転させながら、所定の薬液供給時間の間フッ酸などの
薬液をノズル１０１から基板Ｗの回転中心付近に供給し
て薬液洗浄処理を行い、それに続いて所定の純水供給時
間の間純水をノズル１０２から基板Ｗの回転中心付近に
供給して、基板Ｗに残留付着している薬液を洗い落とす
リンス処理を行う洗浄処理が実施されている。2. Description of the Related Art In a substrate cleaning process, for example, as shown in FIG. 12, a chemical such as hydrofluoric acid is supplied from a nozzle 101 for a predetermined chemical liquid supply time while holding and rotating a substrate W on a spin chuck 100. The chemical solution cleaning process is performed by supplying the liquid to the vicinity of the rotation center of the substrate W, and subsequently, pure water is supplied from the nozzle 102 to the vicinity of the rotation center of the substrate W for a predetermined pure water supply time, and the residual water adheres to the substrate W. A cleaning process of performing a rinsing process for washing off a chemical solution is performed.
【０００３】この一連の処理を、従来は、図１３のタイ
ムチャートに示すように、薬液供給時間ＭＴから純水供
給時間ＰＴへの切換えタイミングでその一部を重複させ
て薬液と純水の両方を基板Ｗに供給するように実施して
いた。Conventionally, as shown in a time chart of FIG. 13, a part of this series of processes is overlapped at the timing of switching from the chemical solution supply time MT to the pure water supply time PT so that both the chemical solution and the pure water can be used. Was supplied to the substrate W.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、この従
来の処理方法には次のような問題がある。まず、薬液と
純水の両方が基板Ｗに重複して供給されている間、供給
方向の違う２液が基板Ｗ上でぶつかるため、液の跳ね返
りが多くなり、基板処理装置の天井などの構造物に液が
付着し易くなる。このように構造物に付着した液は基板
Ｗへの液ダレやボタ落ちの原因となり、処理前や処理中
の基板Ｗに液が落ちると、処理が不均一になるし、処理
を終えた基板Ｗに液が落ちると処理の仕上がり精度が悪
くなるという問題を引き起こす。さらに、結晶化する薬
液を用いている場合には、構造物に付着して結晶化した
薬液が剥がれてパーティクルを発生させ、基板Ｗの汚染
を招くことにもなる。However, this conventional processing method has the following problems. First, while both the chemical solution and the pure water are supplied to the substrate W in an overlapping manner, two liquids having different supply directions collide on the substrate W, so that the liquid rebounds more and the structure of the substrate processing apparatus such as a ceiling. The liquid easily adheres to the object. The liquid adhering to the structure in this manner causes dripping or dripping onto the substrate W, and if the liquid drops on the substrate W before or during processing, the processing becomes uneven, and the substrate after processing is finished. If the liquid falls into W, a problem that the finishing accuracy of the processing is deteriorated is caused. Further, in the case where a chemical solution that crystallizes is used, the crystallized chemical solution attached to the structure is peeled off to generate particles, thereby causing contamination of the substrate W.
【０００５】また、薬液と純水の両方が基板Ｗに重複し
て供給されている間、基板Ｗの上で薬液と純水が混ざり
合うが、基板Ｗ上に広がる薬液及び純水の混合割合が場
所によって不均一になり、図１４に示す領域Ｒ１に比べ
て領域Ｒ２の薬液の濃度が高くなるなど基板Ｗ上での薬
液濃度にバラツキが生じ、その結果、基板Ｗの処理面内
での処理の不均一を招くことになる。Further, while both the chemical solution and the pure water are supplied to the substrate W in an overlapping manner, the chemical solution and the pure water mix on the substrate W, but the mixing ratio of the chemical solution and the pure water spread on the substrate W is increased. Becomes uneven depending on the location, and the concentration of the chemical solution in the region R2 becomes higher than that in the region R1 shown in FIG. This leads to uneven processing.
【０００６】また、近年、処理に使用した薬液を再利用
のために回収する機能を備えた基板処理装置が実用化さ
れている。この種の装置は、回転状態の基板Ｗから飛散
される薬液を回収する薬液回収路と、回転状態の基板Ｗ
から飛散される純水を回収する純水回収路とを備えてい
て、これら各回収路を切り換えて薬液と純水とを分離回
収するように構成されている。In recent years, a substrate processing apparatus having a function of recovering a chemical solution used for processing for reuse has been put to practical use. This type of apparatus includes a chemical solution recovery path for collecting a chemical solution scattered from the rotating substrate W, and a rotating substrate W
And a pure water recovery path for recovering the pure water scattered from the water. The recovery paths are switched to separate and recover the chemical solution and the pure water.
【０００７】しかしながら、従来の処理方法で処理する
場合、薬液の回収効率が悪く、無駄な薬液の使用量が増
加するという問題があった。すなわち、回収する薬液に
純水が混ざると、薬液の濃度が序々に低下し、処理精度
が悪化することになる。しかしながら、従来の処理方法
では、薬液と純水の両方が基板Ｗに重複して供給される
重複タイミングがあり、この重複タイミングに供給され
た薬液は純水が混ざっているので、再利用する薬液とし
て回収することができない。また、各回収路の切換えに
は所定の切換え時間が必要であるが、純水の供給開始と
ともに薬液回収路から純水回収路に切換えを開始する
と、純水が混ざった薬液を薬液回収路で回収する可能性
があるので、薬液回収路から純水回収路への切換えを純
水の供給開始よりも早いタイミングで行っている。その
ため、純水供給開始前に供給した薬液の一部も、再利用
する薬液として回収することができないことになる。こ
のように、従来の処理方法では、基板Ｗに供給した薬液
の全てを再利用のために有効に回収することができず、
無駄な薬液の使用量が増加することになる。[0007] However, when the treatment is carried out by the conventional treatment method, there is a problem that the recovery efficiency of the chemical solution is low and the use amount of the chemical solution is increased. That is, if pure water is mixed with the chemical solution to be collected, the concentration of the chemical solution gradually decreases, and the processing accuracy deteriorates. However, in the conventional processing method, there is an overlap timing at which both the chemical solution and the pure water are supplied to the substrate W in an overlapping manner, and the chemical solution supplied at the overlap timing is mixed with the pure water. Cannot be recovered. In addition, switching of each recovery path requires a predetermined switching time, but when the supply of pure water is started and the switching from the chemical recovery path to the pure water recovery path is started, the chemical mixed with pure water is passed through the chemical recovery path. Since there is a possibility of recovery, the switching from the chemical solution recovery path to the pure water recovery path is performed at a timing earlier than the start of pure water supply. Therefore, a part of the chemical solution supplied before the start of the pure water supply cannot be recovered as a chemical solution to be reused. As described above, the conventional processing method cannot effectively collect all of the chemical solution supplied to the substrate W for reuse,
The amount of useless chemical solution is increased.
【０００８】本発明は、このような事情に鑑みてなされ
たものであって、処理の不均一や処理の仕上がり精度の
悪化、基板の汚染などの不都合の発生を抑制して２種類
の処理液を用いた基板処理を好適に行うことができると
ともに、処理に用いた後の２種類の液を好適に分離回収
することもできる基板処理方法及び基板処理装置を提供
することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is possible to suppress the occurrence of inconveniences such as non-uniformity of processing, deterioration of finishing accuracy of processing, and contamination of a substrate by using two types of processing liquids. It is an object of the present invention to provide a substrate processing method and a substrate processing apparatus capable of suitably performing a substrate processing using a substrate, and capable of suitably separating and recovering two types of liquids used in the processing.
【０００９】[0009]
【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、請求項１に記載の発明は、基板を回転させながら、
所定の第１処理液供給時間の間第１の処理液を基板に供
給して第１の処理を行い、それに続いて所定の第２処理
液供給時間の間第２の処理液を基板に供給して第２の処
理を行う基板処理方法において、前記第１処理液供給時
間と前記第２処理液供給時間との間に、所定時間基板に
第１の処理液及び第２の処理液が供給されないインター
バル時間を設けたことを特徴とするものである。The present invention has the following configuration in order to achieve the above object. That is, according to the first aspect of the present invention, while rotating the substrate,
The first processing liquid is supplied to the substrate for a predetermined first processing liquid supply time to perform the first processing, and subsequently, the second processing liquid is supplied to the substrate for a predetermined second processing liquid supply time. In the substrate processing method of performing the second processing, the first processing liquid and the second processing liquid are supplied to the substrate for a predetermined time between the first processing liquid supply time and the second processing liquid supply time. An interval time that is not set is provided.
【００１０】請求項２に記載の発明は、基板を保持する
基板保持手段と、前記基板保持手段に保持された基板を
回転させる基板回転手段と、前記基板保持手段に保持さ
れた基板に第１の処理液を供給する第１の処理液供給手
段と、前記基板保持手段に保持された基板に第２の処理
液を供給する第２の処理液供給手段と、前記基板保持手
段に保持された基板を回転させながら、所定の第１処理
液供給時間の間、前記第１の処理液供給手段によって第
１の処理液を基板に供給して第１の処理を行わせ、前記
第１処理液供給時間の終了後、所定時間基板に第１の処
理液及び第２の処理液が供給されないインターバル時間
を経てから、所定の第２処理液供給時間の間、前記第２
の処理液供給手段によって第２の処理液を基板に供給し
て第２の処理を行わせる制御手段と、を備えたことを特
徴とするものである。According to a second aspect of the present invention, there is provided a substrate holding means for holding a substrate, a substrate rotating means for rotating the substrate held by the substrate holding means, and a first holding means provided on the substrate held by the substrate holding means. A first processing liquid supply unit for supplying a processing liquid, a second processing liquid supply unit for supplying a second processing liquid to the substrate held by the substrate holding unit, and a first processing liquid supply unit for holding the substrate holding unit. While the substrate is being rotated, the first processing liquid is supplied to the substrate by the first processing liquid supply means for a predetermined first processing liquid supply time to perform the first processing, and the first processing liquid is supplied. After an end of the supply time, after an interval time during which the first processing liquid and the second processing liquid are not supplied to the substrate for a predetermined time, the second processing liquid is supplied for a predetermined second processing liquid supply time.
And a control means for supplying the second processing liquid to the substrate by the processing liquid supply means for performing the second processing.
【００１１】請求項３に記載の発明は、上記請求項２に
記載の基板処理装置において、回転状態の基板から飛散
される第１の処理液を回収する第１の回収路と、回転状
態の基板から飛散される第２の処理液を回収する第２の
回収路と、基板からの処理液を前記第１の回収路で回収
する状態と、前記第２の回収路で回収する状態とで切り
換える切換え手段と、をさらに備え、前記制御手段は、
第１の処理に先立ち、基板からの処理液を前記第１の回
収路で回収する状態にするとともに、前記インターバル
時間の間に、基板からの処理液を前記第１の回収路で回
収する状態から前記第２の回収路で回収する状態に切り
換えるように前記切換え手段を制御することを特徴とす
るものである。According to a third aspect of the present invention, in the substrate processing apparatus of the second aspect, a first recovery path for recovering the first processing liquid scattered from the substrate in the rotating state, A second recovery path for collecting the second processing liquid scattered from the substrate, a state in which the processing liquid from the substrate is recovered in the first recovery path, and a state in which the processing liquid is recovered in the second recovery path. Switching means for switching, the control means,
Prior to the first processing, the processing liquid from the substrate is recovered in the first recovery path, and the processing liquid from the substrate is recovered in the first recovery path during the interval time. The switching means is controlled so as to switch from the state to the state of collecting in the second collection path.
【００１２】[0012]
【作用】請求項１に記載の方法発明の作用は次のとおり
である。基板を回転させながら、所定の第１処理液供給
時間の間第１の処理液を基板に供給して第１の処理を行
う。そして、第１処理液供給時間の終了後、所定時間基
板に第１の処理液及び第２の処理液が供給されないイン
ターバル時間を経てから、所定の第２処理液供給時間の
間第２の処理液を基板に供給して第２の処理を行う。The operation of the method according to the first aspect is as follows. While rotating the substrate, the first processing liquid is supplied to the substrate for a predetermined first processing liquid supply time to perform the first processing. Then, after an end of the first processing liquid supply time, after an interval time during which the first processing liquid and the second processing liquid are not supplied to the substrate for a predetermined time, the second processing is performed for a predetermined second processing liquid supply time. The second process is performed by supplying the liquid to the substrate.
【００１３】この基板処理方法によれば、第１処理液供
給時間と第２処理液供給時間との間に、所定時間基板に
第１の処理液及び第２の処理液が供給されないインター
バル時間を設けているので、基板に供給される第１の処
理液と第２の処理液とが基板上でぶつかることがない。
また、インターバル時間の間に、基板に供給された第１
の処理液は基板の外周方向へ広がり、あるいは、外周部
から飛散されているので、インターバル時間経過後に供
給される第２の処理液と、先に供給された第１の処理液
とが基板上で混ざることもない。According to this substrate processing method, an interval time during which the first processing liquid and the second processing liquid are not supplied to the substrate for a predetermined time is provided between the first processing liquid supply time and the second processing liquid supply time. Since the first processing liquid and the second processing liquid supplied to the substrate do not collide with each other on the substrate.
Also, during the interval time, the first
Since the processing liquid of (1) spreads in the outer peripheral direction of the substrate or is scattered from the outer peripheral part, the second processing liquid supplied after the elapse of the interval time and the first processing liquid supplied earlier are formed on the substrate. There is no mixing.
【００１４】請求項２に記載の装置発明は、上記請求項
１に記載の発明に係る基板処理方法を好適に実施するた
めのもので、その作用は次のとおりである。An apparatus invention according to a second aspect is for suitably executing the substrate processing method according to the first aspect of the invention, and its operation is as follows.
【００１５】基板保持手段に保持された基板を基板回転
手段によって回転させながら、以下の第１、第２の処理
を行わせる。すなわち、制御手段は、第１の処理液供給
手段を制御して所定の第１処理液供給時間の間第１の処
理液を基板に供給して第１の処理を行わせる。そして、
第１処理液供給時間の終了後、所定時間基板に第１の処
理液及び第２の処理液が供給されないインターバル時間
を経てから、制御手段は、第２の処理液供給手段を制御
して所定の第２処理液供給時間の間第２の処理液を基板
に供給して第２の処理を行わせる。While the substrate held by the substrate holding means is rotated by the substrate rotating means, the following first and second processes are performed. That is, the control unit controls the first processing liquid supply unit to supply the first processing liquid to the substrate for a predetermined first processing liquid supply time, thereby performing the first processing. And
After the end of the first processing liquid supply time, after a predetermined time interval after which the first processing liquid and the second processing liquid are not supplied to the substrate, the control means controls the second processing liquid supply means to perform the predetermined processing. During the second processing liquid supply time, the second processing liquid is supplied to the substrate to perform the second processing.
【００１６】請求項３に記載の装置発明は、上記請求項
２に記載の発明に係る基板処理装置にさらに、処理後の
第１の処理液と第２の処理液とを分離回収する機能を付
加したもので、その作用は次のとおりである。According to a third aspect of the present invention, the substrate processing apparatus according to the second aspect further includes a function of separating and recovering the first and second processing solutions after the processing. The operation is as follows.
【００１７】制御手段は、切換え手段を制御して第１の
処理に先立ち、基板からの処理液を第１の回収路で回収
する状態にする。これにより、第１処理液供給時間の間
基板に供給される第１の処理液は第１の回収路で回収さ
れることになる。そして、第１処理液供給時間の終了後
のインターバル時間の間に、切換え手段を制御して基板
からの処理液を第１の回収路で回収する状態から第２の
回収路で回収する状態に切り換える。これにより、イン
ターバル時間経過後の第２処理液供給時間の間基板に供
給される第２の処理液は第２の回収路で回収されること
になる。The control means controls the switching means so that the processing liquid from the substrate is recovered in the first recovery path prior to the first processing. As a result, the first processing liquid supplied to the substrate during the first processing liquid supply time is collected in the first recovery path. Then, during the interval time after the end of the first processing liquid supply time, the switching means is controlled to change the state in which the processing liquid from the substrate is recovered in the first recovery path to the state in which the processing liquid is recovered in the second recovery path. Switch. Accordingly, the second processing liquid supplied to the substrate during the second processing liquid supply time after the elapse of the interval time is collected in the second recovery path.
【００１８】なお、この場合のインターバル時間は、基
板からの処理液を第１の回収路で回収する状態から第２
の回収路で回収する状態に切り換えるのに要する切換え
時間よりも長く設定される。In this case, the interval time is changed from a state in which the processing liquid from the substrate is recovered in the first recovery path to a state in the second recovery time.
Is set to be longer than the switching time required to switch to the state of collection in the collection path.
【００１９】また、第１処理液供給時間の終了した時点
から、既に基板に供給された第１の処理液が基板の外周
部より飛散されるまでに若干の飛散時間が必要になる。
従って、第１処理液供給時間の終了後、その飛散時間が
経過した後に、基板からの処理液を第１の回収路で回収
する状態から第２の回収路で回収する状態に切り換えれ
ば、第１処理液供給時間の間に基板に供給された第１の
処理液の全てを第１の回収路で回収することができる。
従って、インターバル時間として、上記切換え時間に上
記飛散時間を加えた時間よりも長く設定することが好ま
しい。In addition, a short time is required from the end of the first processing liquid supply time to the time when the first processing liquid already supplied to the substrate is scattered from the outer peripheral portion of the substrate.
Therefore, after the end of the first processing liquid supply time, after the elapse of the scattering time, by switching from the state in which the processing liquid from the substrate is recovered in the first recovery path to the state in which the processing liquid is recovered in the second recovery path, All of the first processing liquid supplied to the substrate during the first processing liquid supply time can be recovered in the first recovery path.
Therefore, it is preferable that the interval time is set to be longer than the time obtained by adding the scattering time to the switching time.
【００２０】[0020]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。図１は本発明の一実施例に係る基
板処理装置の要部構成を示す正面図である。以下では、
半導体ウエハ（基板）に薬液を供給して薬液洗浄処理を
行い、それに続いて基板に純水を供給してリンス処理を
行う洗浄処理を例に説明する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a front view showing a main configuration of a substrate processing apparatus according to one embodiment of the present invention. Below,
A cleaning process in which a chemical solution is supplied to a semiconductor wafer (substrate) to perform a chemical solution cleaning process, and subsequently, a rinsing process in which pure water is supplied to the substrate to perform a rinsing process will be described as an example.
【００２１】基板Ｗは、基板保持手段としての真空吸着
式のスピンチャック１に水平姿勢に保持される。スピン
チャック１は、回転軸２を介して電動モーター３と伝動
連結されていて、伝動モーター３を駆動することで、ス
ピンチャック１とともに保持された基板Ｗが鉛直方向の
軸心Ｊ周りで回転されるように構成されている。スピン
チャック１に保持された基板Ｗの上方には、斜め上方か
ら基板Ｗの上面（通常は表面）の回転中心付近に薬液を
供給する薬液ノズル４と純水を供給する純水ノズル５と
が配置されている。薬液ノズル４は、薬液の供給とその
停止とに切り換える開閉弁６が設けられた配管７を介し
て薬液供給部８に連通接続されている。一方、純水ノズ
ル５は、純水の供給とその停止とに切り換える開閉弁９
が設けられた配管１０を介して純水供給部１１に連通接
続されている。スピンチャック１による基板Ｗの保持及
びその解除の制御と、電動モーター３の駆動制御と、開
閉弁６、９の開閉制御は、制御部１２によって行われる
ように構成されている。The substrate W is held in a horizontal posture by a vacuum chuck type spin chuck 1 as a substrate holding means. The spin chuck 1 is operatively connected to an electric motor 3 via a rotating shaft 2. By driving the transmission motor 3, the substrate W held together with the spin chuck 1 is rotated around a vertical axis J. It is configured to: Above the substrate W held by the spin chuck 1, a chemical solution nozzle 4 for supplying a chemical solution and a pure water nozzle 5 for supplying pure water to the vicinity of the center of rotation of the upper surface (usually, the surface) of the substrate W from obliquely above. Are located. The chemical liquid nozzle 4 is connected to a chemical liquid supply unit 8 via a pipe 7 provided with an on-off valve 6 for switching between supply and stop of the chemical liquid. On the other hand, the pure water nozzle 5 has an on-off valve 9 for switching between pure water supply and its stop.
Is connected to a pure water supply unit 11 through a pipe 10 provided with a. The control of the control of the holding and release of the substrate W by the spin chuck 1, the control of the drive of the electric motor 3, and the control of the opening and closing of the on-off valves 6, 9 are performed by the control unit 12.
【００２２】上記構成の装置による１枚の基板Ｗに対す
る洗浄処理方法を図２、図３を参照して説明する。図２
は本発明に係る基板処理方法を示すタイムチャートであ
り、図３は動作説明図である。A method of cleaning one substrate W by the above-described apparatus will be described with reference to FIGS. FIG.
3 is a time chart showing a substrate processing method according to the present invention, and FIG. 3 is an operation explanatory diagram.
【００２３】図示しない搬送ロボットによって基板Ｗが
スピンチャック１に搬入されると、制御部１２は、スピ
ンチャック１に基板Ｗを保持させ、電動モーター３を駆
動してスピンチャック１及びそれに保持された基板Ｗを
軸心Ｊ周りに回転させる。When the substrate W is carried into the spin chuck 1 by a transfer robot (not shown), the controller 12 causes the spin chuck 1 to hold the substrate W, and drives the electric motor 3 to hold the spin chuck 1 and the spin chuck 1. The substrate W is rotated around the axis J.
【００２４】そして、開閉弁６を開にして基板Ｗへの薬
液の供給を開始し、予め決められた薬液供給時間ＭＴの
間薬液を基板Ｗに供給して薬液洗浄処理を行わせる。こ
のとき、図３（ａ）に示すように、基板Ｗに供給された
薬液ＭＱは回転状態の基板Ｗの遠心力によって基板Ｗの
回転中心から外周部へと広がり、外周部から側方に振り
切られて飛散される。Then, the supply of the chemical liquid to the substrate W is started by opening the on-off valve 6, and the chemical liquid is supplied to the substrate W for a predetermined chemical liquid supply time MT to perform the chemical liquid cleaning process. At this time, as shown in FIG. 3A, the chemical liquid MQ supplied to the substrate W spreads from the rotation center of the substrate W to the outer peripheral portion due to the centrifugal force of the rotating substrate W, and is shaken laterally from the outer peripheral portion. Scattered.
【００２５】薬液供給時間ＭＴが経過すると、制御部１
２は開閉弁６を閉にして基板Ｗへの薬液の供給を停止
し、以後、予め決められたインターバル時間ＩＴの間薬
液及び純水を基板Ｗに供給しないようにする。基板Ｗに
既に供給されている薬液ＭＱは、このインターバル時間
ＩＴの間に、図３（ｂ）に示すように、基板Ｗの回転中
心から序々に外周部へと広がり、最終的に、図３（ｃ）
に示すように、基板Ｗの外周部から側方に振り切られて
飛散されることになる。When the chemical solution supply time MT elapses, the control unit 1
2 closes the on-off valve 6 to stop the supply of the chemical solution to the substrate W, and thereafter prevents the chemical solution and pure water from being supplied to the substrate W for a predetermined interval time IT. The chemical solution MQ already supplied to the substrate W gradually spreads from the rotation center of the substrate W to the outer peripheral portion during the interval time IT as shown in FIG. (C)
As shown in (1), the substrate W is shaken sideways from the outer peripheral portion and scattered.
【００２６】インターバル間ＩＴが経過すると、制御部
１２は、開閉弁９を開にして基板Ｗへの純水の供給を開
始し、予め決められた純水供給時間ＰＴの間純水を基板
Ｗに供給してリンス処理を行わせる。このとき、図３
（ｄ）に示すように、基板Ｗに供給された純水ＰＱは回
転状態の基板Ｗの遠心力によって基板Ｗの回転中心から
外周部へと広がり、外周部から側方に振り切られて飛散
される。When the interval IT has elapsed, the control unit 12 opens the on-off valve 9 to start supplying pure water to the substrate W, and supplies the pure water to the substrate W for a predetermined pure water supply time PT. To perform a rinsing process. At this time, FIG.
As shown in (d), the pure water PQ supplied to the substrate W spreads from the rotation center of the substrate W to the outer peripheral portion due to the centrifugal force of the rotating substrate W, and is shaken off from the outer peripheral portion to the side and scattered. You.
【００２７】純水供給時間ＰＴが経過すると、制御部１
２は開閉弁９を閉にして基板Ｗへの純水の供給を停止
し、以後、予め決められた乾燥時間ＤＴの間スピンチャ
ック１の回転を継続し、基板Ｗに残留付着している純水
を基板Ｗの外周部から側方に振り切らせて基板Ｗを乾燥
させる。When the pure water supply time PT elapses, the control unit 1
2 closes the on-off valve 9 to stop the supply of pure water to the substrate W, and thereafter, the rotation of the spin chuck 1 is continued for a predetermined drying time DT, and the pure water remaining on the substrate W is removed. The substrate W is dried by sprinkling water laterally from the outer peripheral portion of the substrate W.
【００２８】乾燥時間ＤＴが経過すると、制御部１２
は、電動モーター３の駆動を停止してスピンチャック１
の回転を停止させ、スピンチャック１による基板Ｗの保
持を解除させる。そして、図示しない搬送ロボットによ
って基板Ｗがスピンチャック１から搬出され、１枚の基
板Ｗに対する洗浄処理が終了する。When the drying time DT has elapsed, the control unit 12
Stops the driving of the electric motor 3 and turns the spin chuck 1
Is stopped, and the holding of the substrate W by the spin chuck 1 is released. Then, the substrate W is unloaded from the spin chuck 1 by the transfer robot (not shown), and the cleaning process for one substrate W is completed.
【００２９】以上のように、この基板処理方法によれ
ば、薬液供給時間ＭＴと純水供給時間ＰＴとの間に、所
定時間基板Ｗに薬液及び純水が供給されないインターバ
ル時間ＩＴを設けて薬液洗浄処理及びリンス処理を行う
ようにしたので、基板Ｗに供給される薬液と純水とが基
板Ｗに同時に供給されることがなく、これら２液が基板
Ｗ上でぶつかることがなくなり、液の跳ね返りを抑制で
き、天井などの構造物に液が付着するのを抑制すること
ができる。従って、基板Ｗへの液ダレやボタ落ちを軽減
することができ、基板Ｗへの液ダレやボタ落ちに起因し
た処理の不均一や処理の仕上がり精度の悪化を軽減でき
るとともに、パーティクルの発生も抑制でき、基板Ｗの
汚染を軽減することができる。As described above, according to this substrate processing method, an interval time IT during which the chemical solution and pure water are not supplied to the substrate W for a predetermined time is provided between the chemical solution supply time MT and the pure water supply time PT. Since the cleaning process and the rinsing process are performed, the chemical solution and the pure water supplied to the substrate W are not supplied to the substrate W at the same time. Bounce can be suppressed, and adhesion of the liquid to a structure such as a ceiling can be suppressed. Therefore, liquid dripping and dripping onto the substrate W can be reduced, and non-uniform processing and deterioration in processing accuracy due to liquid dripping and dripping onto the substrate W can be reduced, and particles can also be generated. Thus, contamination of the substrate W can be reduced.
【００３０】また、インターバル時間ＩＴの間に、基板
Ｗに供給された薬液は基板Ｗの外周部から飛散されてい
るので、インターバル時間ＩＴ経過後に供給される純水
と、先に供給された薬液とが基板Ｗ上で混ざることがな
く、基板Ｗ上での薬液濃度のバラツキをなくすことがで
き、基板Ｗ上での薬液濃度のバラツキに起因した基板Ｗ
の処理面内での処理の不均一をなくすことができる。な
お、上記実施形態では、インターバル時間ＩＴとして、
基板Ｗへの薬液の供給を停止してから、基板Ｗに既に供
給されている薬液が基板Ｗの外周部より側方に振り切ら
れて飛散されるまでに要する時間より長い時間を設定し
た場合について説明しているが、例えば、図３（ｂ）の
状態で純水の供給を開始しても基板Ｗ上で薬液と純水と
が混ざるのを抑制することができる。従って、インター
バル時間ＩＴとして、基板Ｗへの薬液の供給を停止して
から、基板Ｗに既に供給されている薬液が基板Ｗの外周
部へと広がりつつある図３（ｂ）の状態までに要する時
間を設定してもよい。Since the chemical supplied to the substrate W is scattered from the outer periphery of the substrate W during the interval IT, the pure water supplied after the elapse of the interval IT and the chemical supplied earlier Are not mixed on the substrate W, the variation of the chemical solution concentration on the substrate W can be eliminated, and the substrate W caused by the variation of the chemical solution concentration on the substrate W can be eliminated.
The processing unevenness within the processing surface can be eliminated. In the above embodiment, the interval time IT is
A case in which a time longer than the time required for stopping the supply of the chemical solution to the substrate W and for the chemical solution already supplied to the substrate W to be shaken off from the outer peripheral portion of the substrate W to the side and scattered is set. Although described, for example, even when the supply of pure water is started in the state of FIG. 3B, the mixing of the chemical solution and the pure water on the substrate W can be suppressed. Therefore, as the interval time IT, it is necessary to stop the supply of the chemical solution to the substrate W and to reach the state shown in FIG. 3B in which the chemical solution already supplied to the substrate W is spreading to the outer peripheral portion of the substrate W. The time may be set.
【００３１】基板Ｗ上で薬液と純水とが混ざるのを抑制
するために、インターバル時間ＩＴとしては、少なくと
も０．３秒以上の時間を設定することが好ましい。一
方、インターバル時間ＩＴが長すぎると、リンス処理前
の僅かな薬液が残留付着したまま基板Ｗが乾燥され、以
後、基板Ｗに純水を供給しても薬液の洗い落としが不完
全になったり、基板Ｗ上からパーティクルが発生するな
どの不都合が起き易くなる。従って、このような不都合
を防止するために、インターバル時間ＩＴは、長くても
１５秒以下に設定することが好ましい。In order to prevent the chemical solution and the pure water from being mixed on the substrate W, it is preferable to set the interval time IT to at least 0.3 seconds or more. On the other hand, if the interval time IT is too long, the substrate W is dried while a small amount of the chemical before the rinsing treatment remains adhered thereto, and thereafter, even if pure water is supplied to the substrate W, the cleaning of the chemical is incomplete, Inconveniences such as generation of particles on the substrate W are likely to occur. Therefore, in order to prevent such inconvenience, it is preferable to set the interval time IT to 15 seconds or less at the longest.
【００３２】また、この基板処理方法によれば、薬液と
純水とが基板Ｗ上で混ざることがないので、後で詳述す
るように、基板Ｗに供給した薬液と純水とを好適に分離
回収することができる。また、インターバル時間ＩＴを
設けているので、このインターバル時間ＩＴの間に回収
路の切換えを行うことで、回収路の切換え中に薬液、純
水の有効回収ができなくなるなどの不都合も解消でき
る。Further, according to this substrate processing method, since the chemical solution and the pure water do not mix on the substrate W, the chemical solution and the pure water supplied to the substrate W can be preferably used as described later in detail. It can be separated and collected. In addition, since the interval time IT is provided, by switching the recovery path during the interval time IT, it is possible to solve the inconvenience that the chemical solution and the pure water cannot be effectively recovered during the switching of the recovery path.
【００３３】ところで、薬液供給時間ＭＴは基板Ｗに実
際に薬液が供給される時間であり、純水供給時間ＰＴは
基板Ｗに実際に純水が供給される時間、インターバル時
間ＩＴは薬液及び純水が実際に基板に供給されない時間
である。上記実施形態では、開閉弁６、９の開、閉のタ
イミングと、基板Ｗへ薬液、純水が実際に供給されたタ
イミング、基板Ｗへの薬液、純水の供給が実際に停止さ
れたタイミングとを同じとして説明しているが、これら
タイミングにタイムラグがある場合には、制御部１２は
開閉弁６、９の開閉を図４に示すように制御すればよ
い。なお、図中のＴＲＡは開閉弁６の開のタイミングと
基板Ｗへ薬液が実際に供給されるタイミングとの間のタ
イムラグであり、ＴＲＢは開閉弁６の閉のタイミングと
基板Ｗへの薬液の供給が実際に停止されたタイミングと
の間のタイムラグ、ＴＲＣ、ＴＲＤは開閉弁９の開、閉
のタイミングと基板Ｗへの純水の実際の供給、停止タイ
ミングとの間のタイムラグである。The chemical solution supply time MT is the time when the chemical solution is actually supplied to the substrate W, the pure water supply time PT is the time when the pure water is actually supplied to the substrate W, and the interval time IT is the chemical solution and the pure water. This is the time when water is not actually supplied to the substrate. In the above embodiment, the timing of opening and closing the on-off valves 6 and 9, the timing when the chemical solution and pure water are actually supplied to the substrate W, and the timing when the supply of the chemical solution and pure water to the substrate W are actually stopped However, when there is a time lag in these timings, the control unit 12 may control the opening and closing of the on-off valves 6 and 9 as shown in FIG. TRA in the figure is a time lag between the timing of opening the on-off valve 6 and the timing at which the chemical solution is actually supplied to the substrate W, and TRB is the timing of closing the on-off valve 6 and the timing of the chemical solution on the substrate W. The time lag between the timing when the supply is actually stopped and TRC and TRD are the time lag between the timing of opening and closing the on-off valve 9 and the timing of the actual supply and stop of the pure water to the substrate W.
【００３４】次に、本発明に係る基板処理方法を適用で
きるその他の実施形態装置の構成例を図５、図６を参照
して説明する。Next, a configuration example of an apparatus according to another embodiment to which the substrate processing method according to the present invention can be applied will be described with reference to FIGS.
【００３５】図５に示す装置は、メカニカル式のスピン
チャック１３で基板Ｗを保持するように構成されてい
る。このスピンチャック１３は、回転軸２の上端に一体
回転可能に取り付けられた回転部１３ａから３本以上の
アーム１３ｂが延出されたスピンベース１３ｃを備えて
いる。そして、各アーム１３ｂの先端部に基板Ｗの外周
部を載置保持する基板保持部材１４が立設され、基板Ｗ
の外周部を３箇所以上で保持するように構成されてい
る。また、その装置には、斜め下方から、保持された基
板Ｗの下面（通常は裏面）の回転中心付近に薬液を供給
する薬液ノズル４と純水を供給する純水ノズル５とが備
えられ、基板Ｗの上面または／および下面に対する洗浄
処理が行えるように構成されている。基板Ｗの上面につ
いては、図２（図４）に示す方法で処理することで上記
実施形態と同様の効果を得ることができる。基板Ｗの下
面に対する洗浄処理も、上面に対する処理と同様の方法
で行うことにより、上面の場合と同様の効果を得ること
ができる。The apparatus shown in FIG. 5 is configured to hold a substrate W with a mechanical spin chuck 13. The spin chuck 13 includes a spin base 13c in which three or more arms 13b extend from a rotating part 13a attached to the upper end of the rotating shaft 2 so as to be integrally rotatable. Then, a substrate holding member 14 for mounting and holding the outer peripheral portion of the substrate W is provided upright at the tip of each arm 13b.
Is held at three or more locations. In addition, the apparatus is provided with a chemical solution nozzle 4 for supplying a chemical solution and a pure water nozzle 5 for supplying pure water near the rotation center of the lower surface (usually, the back surface) of the held substrate W from obliquely below, The upper surface and / or the lower surface of the substrate W can be cleaned. By treating the upper surface of the substrate W by the method shown in FIG. 2 (FIG. 4), the same effect as in the above embodiment can be obtained. The same effect as in the case of the upper surface can be obtained by performing the cleaning process for the lower surface of the substrate W in the same manner as the process for the upper surface.
【００３６】図６に示す装置では、円板状のスピンベー
ス１５ａの周縁に沿って、３個以上の基板保持部材１４
が等間隔に立設されたメカニカル式のスピンチャック１
５を備えている。また、回転軸２、スピンベース１５ａ
を貫通して処理液供給管１６が貫通され、その先端の処
理液供給部１６ａから、保持された基板Ｗの下面の回転
中心付近に薬液と純水とを選択的に切換え供給できるよ
うに構成されている。この装置構成によっても、基板Ｗ
の上面または／および下面の洗浄処理において、上記実
施形態と同様の効果を得ることができる。In the apparatus shown in FIG. 6, three or more substrate holding members 14 are provided along the periphery of the disk-shaped spin base 15a.
Mechanical spin chuck 1 with erected at equal intervals
5 is provided. Also, the rotating shaft 2, the spin base 15a
And a processing liquid supply pipe 16 is penetrated therethrough, and a chemical liquid and pure water can be selectively switched and supplied to the vicinity of the rotation center of the lower surface of the held substrate W from the processing liquid supply section 16a at the tip thereof. Have been. The substrate W
In the cleaning process of the upper surface and / or lower surface of the second embodiment, the same effect as in the above embodiment can be obtained.
【００３７】なお、図５、図６の装置において、各基板
保持部材１４は、基板Ｗの外周部を下方から支持する基
板支持部１４ａと基板支持部１４ａに支持された基板Ｗ
の外周端面を押圧して基板Ｗを保持する基板保持部１４
ｂとを備えていて、スピンベース１３ｃ、１５ａの上面
から離間させて基板Ｗを水平姿勢で保持するように構成
されている。各基板保持部材１４は、基板保持部１４ｂ
が基板Ｗの外周端面を押圧する保持状態と、基板保持部
１４ｂが基板Ｗの外周端面から離れる非保持状態とで切
換え可能に構成されている。この保持状態と非保持状態
との切り換えは、例えば、特公平３−９６０７号公報に
開示されたリンク機構などによって実現されている。In the apparatus shown in FIGS. 5 and 6, each substrate holding member 14 has a substrate supporting portion 14a for supporting the outer peripheral portion of the substrate W from below and the substrate W supported on the substrate supporting portion 14a.
Holding part 14 for holding the substrate W by pressing the outer peripheral end face of
b, and is configured to hold the substrate W in a horizontal posture while being separated from the upper surfaces of the spin bases 13c and 15a. Each substrate holding member 14 is provided with a substrate holding portion 14b.
Can be switched between a holding state in which the outer peripheral end surface of the substrate W is pressed and a non-holding state in which the substrate holding portion 14b is separated from the outer peripheral end surface of the substrate W. The switching between the holding state and the non-holding state is realized by, for example, a link mechanism disclosed in Japanese Patent Publication No. 3-9607.
【００３８】次に、薬液と純水とを分離回収する機能を
備えた実施形態を図７を参照して説明する。図７は、薬
液と純水とを分離回収する機能を備えた実施形態に係る
基板処理装置の一例の構成を示す縦断面図である。な
お、上記各実施形態と共通する部材は、図１、図５、図
６と同一符号を付してその詳述は省略する。Next, an embodiment having a function of separating and recovering a chemical solution and pure water will be described with reference to FIG. FIG. 7 is a longitudinal sectional view illustrating a configuration of an example of a substrate processing apparatus according to an embodiment having a function of separating and recovering a chemical solution and pure water. Members common to the above embodiments are denoted by the same reference numerals as in FIGS. 1, 5, and 6, and detailed descriptions thereof are omitted.
【００３９】スピンチャック１５は処理室２０内に収容
されている。処理室２０は、処理カップ２１と、処理カ
ップ２１に対して昇降可能な案内部材２２とによって形
成されている。処理カップ２１の底面の中央部を貫通す
るように回転軸２が配設されている。なお、図７では、
図面が煩雑になることを避けるために、１個の基板保持
部材１４のみを示している。The spin chuck 15 is housed in a processing chamber 20. The processing chamber 20 is formed by a processing cup 21 and a guide member 22 that can move up and down with respect to the processing cup 21. The rotating shaft 2 is provided so as to penetrate the center of the bottom surface of the processing cup 21. In FIG. 7,
In order to avoid complicating the drawing, only one substrate holding member 14 is shown.
【００４０】処理カップ２１は、略有底円筒形状の容器
であり、底面には円筒状の仕切り部材３０が上方に向け
て突出して形成されている。これにより、仕切り部材３
０と処理カップ２１の側壁２１ａとの間に平面視でドー
ナツ形状の薬液回収槽３１が形成され、仕切り部材３０
の内側に略円筒状の純水回収槽３２が形成されている。
薬液回収槽３１は、処理に使用された後の薬液を回収す
るための槽であって、その底面には薬液回収管３３に連
通接続された薬液回収口３４が形成されている。薬液回
収管３３は、薬液供給部８内の図示しない薬液タンクに
連通接続されていて、回収した薬液をその薬液タンクに
貯留して再利用するように構成されている。また、純水
回収槽３２は、処理に使用された後の純水のように廃棄
すべき廃液を回収するための槽であって、その底面には
純水回収口３５が形成されている。純水回収口３５には
純水廃棄配管３６が連通接続されていて、この純水廃棄
配管３６を介して回収された純水が廃棄されるようにな
っている。The processing cup 21 is a substantially cylindrical container having a bottom, and a cylindrical partition member 30 is formed on the bottom surface so as to protrude upward. Thereby, the partition member 3
0 and a side wall 21 a of the processing cup 21, a donut-shaped chemical liquid recovery tank 31 is formed in a plan view, and the partition member 30 is formed.
, A substantially cylindrical pure water recovery tank 32 is formed.
The chemical liquid recovery tank 31 is a tank for collecting a chemical liquid used for processing, and has a chemical liquid recovery port 34 connected to a chemical liquid recovery pipe 33 at a bottom surface thereof. The chemical liquid collecting pipe 33 is connected to a chemical liquid tank (not shown) in the chemical liquid supply unit 8, and is configured to store the collected chemical liquid in the chemical liquid tank for reuse. The pure water recovery tank 32 is a tank for collecting a waste liquid to be discarded like pure water used for processing, and has a pure water recovery port 35 formed on the bottom surface thereof. A pure water disposal pipe 36 is connected to the pure water recovery port 35 so that the pure water collected through the pure water disposal pipe 36 is discarded.
【００４１】案内部材２２は、軸芯Ｊに対して略回転対
称な形状を有している。そして、処理カップ２１を包囲
する円筒状の支持部材４０に取り付けられている。この
円筒状の支持部材４０は、昇降駆動機構２３によって昇
降されるように構成されていて、これにより、案内部材
２２がスピンチャック１５に対して昇降できるようにな
っている。The guide member 22 has a substantially rotationally symmetric shape with respect to the axis J. Then, it is attached to a cylindrical support member 40 surrounding the processing cup 21. The cylindrical support member 40 is configured to be moved up and down by a lifting drive mechanism 23, so that the guide member 22 can be moved up and down with respect to the spin chuck 15.
【００４２】案内部材２２は、回転軸２に対して回転対
称な形状を有する内壁面２２ａを有している。この内壁
面２２ａには、その下端から上方に所定距離だけ離間し
た位置に、スピンチャック１５に向かって内方に突出し
た横向き凸部５０が形成されている。この横向き凸部５
０は案内部材２２の内壁面２２ａを、下方側の薬液案内
部５１と上方側の純水案内部５２とに二分している。換
言すれば、横向き凸部５０は、薬液案内部５１と純水案
内部５２との境界部に形成されている。薬液案内部５１
は、再利用のために回収すべき薬液を薬液回収槽３１に
導くための部位であり、純水案内部５２は、廃棄するた
めに回収すべき純水を純水回収槽３２に導くための部位
である。The guide member 22 has an inner wall surface 22a having a shape rotationally symmetric with respect to the rotation shaft 2. On the inner wall surface 22a, a lateral protrusion 50 protruding inward toward the spin chuck 15 is formed at a position separated from the lower end by a predetermined distance upward. This horizontal projection 5
Numeral 0 divides the inner wall surface 22a of the guide member 22 into a chemical solution guide portion 51 on the lower side and a pure water guide portion 52 on the upper side. In other words, the lateral protrusion 50 is formed at the boundary between the chemical liquid guide 51 and the pure water guide 52. Chemical guide 51
Is a part for guiding the chemical solution to be recovered for reuse to the chemical solution recovery tank 31, and the pure water guide unit 52 is for guiding the pure water to be recovered for disposal to the pure water recovery tank 32. Part.
【００４３】横向き凸部５０の先端部（スピンチャック
１５に最も近接した部位）には、下方に垂れ下がった舌
部５０ａが形成されている。これにより、薬液案内部５
１には、結果として、上方に窪み、かつ、下方に開放し
た下向き凹部５３が形成されている。この下向き凹部５
３の天面５３ａは、上方に向かうほど径が小さくなるよ
うに形成された傾斜面とされている。この天面５３ａの
下方側には、垂直な円筒面５３ｂが連なっている。A tongue portion 50a that hangs downward is formed at the tip of the lateral protrusion 50 (the portion closest to the spin chuck 15). As a result, the chemical solution guide 5
As a result, a downward recessed portion 53 which is depressed upward and opened downward is formed in 1. This downward recess 5
The third top surface 53a is an inclined surface formed such that the diameter decreases as going upward. A vertical cylindrical surface 53b is continued below the top surface 53a.
【００４４】一方、純水案内部５２の上方側の部位に
は、上方に向かうほど径が小さくなるように形成された
傾斜面からなる天面５４ａが形成されており、この天面
５４ａの下方側には、垂直な円筒面５４ｂが連なってい
る。従って、天面５４ａ、円筒面５４ｂ、および横向き
凸部５０の上面とによって、スピンチャック１５から離
反する方向に向かって窪み、かつ、スピンチャック１５
の方向に開放した横向き凹部５４が形成されている。ま
た、横向き凹部５４の天面５４ａの上端側から連なるよ
うに、さらに上方に延びて、垂直な円筒内壁面を有する
上向き凸部５５が形成されている。On the other hand, a top surface 54a is formed at an upper portion of the pure water guide portion 52. The top surface 54a is formed of an inclined surface whose diameter decreases as going upward. On the side, a vertical cylindrical surface 54b continues. Therefore, the top surface 54a, the cylindrical surface 54b, and the upper surface of the lateral protrusion 50 depress in a direction away from the spin chuck 15, and
Are formed in the horizontal direction. Further, an upward convex portion 55 extending vertically upward and having a vertical cylindrical inner wall surface is formed so as to continue from the upper end side of the top surface 54a of the lateral concave portion 54.
【００４５】なお、薬液案内部５１、薬液回収槽３１、
薬液回収口３４、薬液回収管３３と、純水案内部５２、
純水回収槽３２、純水回収口３５、純水廃棄配管３６と
は、それぞれ本発明における第１の回収路と第２回収路
に相当する。The chemical liquid guide 51, the chemical liquid recovery tank 31,
The chemical liquid recovery port 34, the chemical liquid recovery pipe 33, the pure water guide 52,
The pure water recovery tank 32, the pure water recovery port 35, and the pure water disposal pipe 36 correspond to a first recovery path and a second recovery path in the present invention, respectively.
【００４６】この実施形態に係る装置においては、スピ
ンチャック１５の上下方向位置は常に一定に保たれる一
方で、案内部材２２及び処理カップ２１が必要に応じて
昇降されるようになっている。具体的には、案内部材２
２は、スピンチャック１５に保持されて回転される基板
Ｗから側方に飛散される薬液を薬液案内部５１で受け止
める第１の高さ（Ｈ１）と、同じくスピンチャック１５
に保持されて回転される基板Ｗから側方に飛散される純
水を純水案内部５２で受け止める第２の高さ（Ｈ２）
と、案内部材２２の上端２２ｂがスピンチャック１５に
おける基板保持高さ（ＨＷ）よりも下に位置する第３の
高さ（Ｈ３）との３段階の高さに選択的に制御される。
また、処理カップ２１は、スピンチャック１５における
基板保持高さ（ＨＷ）と略同じ高さに上端２１ｂが位置
する処理高さ（ＨＰ）と、案内部材２２が上記第３の高
さ（Ｈ３）に位置するときに、この案内部材２２との干
渉を避けることができる退避高さ（ＨＲ）とに選択的に
制御される。In the apparatus according to this embodiment, the vertical position of the spin chuck 15 is always kept constant, while the guide member 22 and the processing cup 21 are raised and lowered as necessary. Specifically, the guide member 2
Reference numeral 2 denotes a first height (H1) at which a chemical solution scattered laterally from the substrate W held and rotated by the spin chuck 15 is received by the chemical solution guide portion 51;
Height (H2) for receiving pure water scattered laterally from the substrate W held and rotated by the pure water guide portion 52
And a third height (H3) in which the upper end 22b of the guide member 22 is located lower than the substrate holding height (HW) of the spin chuck 15 is selectively controlled.
The processing cup 21 has a processing height (HP) where the upper end 21b is located at substantially the same height as the substrate holding height (HW) of the spin chuck 15, and the guide member 22 has the third height (H3). Is controlled selectively to the retreat height (HR) that can avoid the interference with the guide member 22.
【００４７】案内部材２２及び処理カップ２１の上記昇
降移動は、切換え手段としての昇降駆動機構２３によっ
て行われるようになっている。昇降駆動機構２３は、ボ
ールネジなどの周知の１軸方向駆動機構（図示せず）を
備えていて、この１軸方向駆動機構で支持部材４０を昇
降させることで、案内部材２２を第１高さ（Ｈ１）〜第
３の高さ（Ｈ３）の間で昇降させるように構成されてい
る。また、処理カップ２１の昇降も同様に、昇降駆動機
構２３に備えられた図示しない周知の１軸方向駆動機構
によって、処理カップ２１を支持する図示しない支持部
材を昇降させることで、処理カップ２１を処理高さ（Ｈ
Ｐ）と退避高さ（ＨＲ）との間で昇降させるように構成
されている。なお、この装置には、案内部材２２が各高
さ（Ｈ１、Ｈ２、Ｈ３）に位置したことを検知するセン
サと、処理カップ２１が各高さ（ＨＰ、ＨＲ）に位置し
たことを検知するセンサ（いずれも図示せず）を備えて
いる。The elevating movement of the guide member 22 and the processing cup 21 is performed by an elevating drive mechanism 23 as a switching means. The elevating drive mechanism 23 includes a well-known one-axis drive mechanism (not shown) such as a ball screw. The support member 40 is moved up and down by the one-axis drive mechanism to move the guide member 22 to the first height. It is configured to move up and down between (H1) and a third height (H3). Similarly, when the processing cup 21 is moved up and down by a well-known uniaxial driving mechanism (not shown) provided in the elevating drive mechanism 23, the processing cup 21 is moved up and down. Processing height (H
P) and the retreat height (HR). In this apparatus, a sensor for detecting that the guide member 22 is located at each height (H1, H2, H3) and a sensor for detecting that the processing cup 21 is located at each height (HP, HR). A sensor (neither is shown) is provided.
【００４８】図８は、本装置の制御系の構成を示すブロ
ック図である。制御部１２は、上記実施形態で説明した
スピンチャック１５による基板Ｗの保持及びその解除の
制御、電動モーター３の駆動制御、各開閉弁６、９、の
開閉制御以外に、昇降駆動機構２３による処理カップ２
１及び案内部材２２の昇降制御も行う。制御部１２に
は、案内部材２２が各高さ（Ｈ１、Ｈ２、Ｈ３）に位置
したことを検知するセンサＳ１〜Ｓ３と、処理カップ２
１が各高さ（ＨＰ、ＨＲ）に位置したことを検知するセ
ンサＳ４、Ｓ５からの出力信号が与えられており、これ
らセンサの出力に基づいて、制御部１２は昇降駆動機構
２３を制御して、案内部材２２を所望の高さ（Ｈ１、Ｈ
２、Ｈ３）に位置させるとともに、処理カップ２１を所
望の高さ（ＨＰ、ＨＲ）に位置させるように制御する。FIG. 8 is a block diagram showing the configuration of the control system of the present apparatus. The control unit 12 controls the holding and release of the substrate W by the spin chuck 15 described in the above embodiment, the drive control of the electric motor 3, and the open / close control of each of the on-off valves 6 and 9. Processing cup 2
1 and the control of the guide member 22 are also performed. The control unit 12 includes sensors S1 to S3 for detecting that the guide member 22 is positioned at each height (H1, H2, H3), and the processing cup 2
Output signals from the sensors S4 and S5 for detecting that 1 is located at each height (HP, HR) are given. Based on the outputs of these sensors, the control unit 12 controls the elevation drive mechanism 23. The guide member 22 to a desired height (H1, H
2, H3) and the processing cup 21 is controlled to be positioned at a desired height (HP, HR).
【００４９】次に、本装置の動作を図９ないし図１１を
参照して説明する。図９は基板の搬入／搬出時の状態を
示し、図１０は薬液洗浄処理時の状態を示し、図１１は
リンス処理及び乾燥処理時の状態を示している。Next, the operation of the present apparatus will be described with reference to FIGS. 9 shows a state at the time of carrying in / out the substrate, FIG. 10 shows a state at the time of the chemical solution cleaning processing, and FIG. 11 shows a state at the time of the rinsing processing and the drying processing.
【００５０】制御部１２は、まず、図９に示すように、
処理カップ２１を退避高さＨＲに位置させるとともに、
案内部材２２を最も低い第３の高さＨ３に位置させ、ス
ピンチャック１５における基板保持高さ（ＨＷ）を案内
部材２２の上端２２ｂより上方に位置させる。この状態
で、図示しない搬送ロボットによってスピンチャック１
５に対して基板Ｗが搬入される。スピンチャック１５に
基板Ｗが搬入されると、制御部１２はスピンチャック１
５に基板Ｗを保持させる。The control unit 12 firstly, as shown in FIG.
While the processing cup 21 is located at the retreat height HR,
The guide member 22 is positioned at the lowest third height H3, and the substrate holding height (HW) of the spin chuck 15 is positioned above the upper end 22b of the guide member 22. In this state, the spin chuck 1 is moved by a transfer robot (not shown).
The substrate W is loaded into the substrate 5. When the substrate W is loaded into the spin chuck 15, the control unit 12
5 holds the substrate W.
【００５１】そして、制御部１２は、図９の状態から図
１０に示すように、案内部材２２を最も高い第１の高さ
Ｈ１に上昇させるとともに、処理カップ２１を退避高さ
ＨＲより高い処理高さＨＰに上昇させる。この状態で基
板Ｗに薬液が供給されて薬液洗浄処理が行われる。この
状態では、薬液案内部５１が基板Ｗの側方に位置されて
いる。従って、回転状態の基板Ｗから飛散された薬液
は、薬液案内部５１で受け止められ、薬液回収槽３１に
導かれ、薬液回収口３４、薬液回収管３３を経て薬液タ
ンクに貯留される。このとき、横向き凸部５０は薬液が
純水案内部５２に流出することを防止する。特に、この
実施形態では、舌部５０ａが横向き凸部５０の先端に形
成されていて、薬液案内部５１の上部に下向き凹部５３
が形成されているので、薬液案内部５１で受け止めた薬
液が純水案内部５２に流出するおそれはない。Then, the control unit 12 raises the guide member 22 from the state of FIG. 9 to the highest first height H1 and moves the processing cup 21 to a position higher than the retreat height HR, as shown in FIG. Raise to the height HP. In this state, a chemical solution is supplied to the substrate W and a chemical solution cleaning process is performed. In this state, the chemical liquid guide 51 is located on the side of the substrate W. Therefore, the chemical liquid scattered from the rotating substrate W is received by the chemical liquid guide 51, guided to the chemical liquid recovery tank 31, and stored in the chemical liquid tank via the chemical liquid recovery port 34 and the chemical liquid recovery pipe 33. At this time, the lateral projection 50 prevents the chemical solution from flowing out to the pure water guide 52. In particular, in this embodiment, the tongue 50 a is formed at the tip of the lateral protrusion 50, and the downward recess 53 is formed above the chemical solution guide 51.
Is formed, there is no possibility that the chemical solution received by the chemical solution guide portion 51 flows out to the pure water guide portion 52.
【００５２】薬液供給時間ＭＴが経過すると、制御部１
２は薬液の供給を停止する。そして、基板Ｗへの薬液の
供給を停止してから、基板Ｗに既に供給された薬液が基
板Ｗの外周部より飛散されるまでに要する飛散時間ＨＴ
（秒）経過するのを待って、図１０の状態から図１１に
示すように、処理カップ２１を処理高さＨＰのままと
し、案内部材２２を第１の高さＨ１より低い第２の高さ
Ｈ２に下降させ、純水案内部５２を基板Ｗの側方に位置
させる。このように動作させることで、基板Ｗへの薬液
の供給を停止した後に、基板Ｗに残留している薬液も薬
液案内部５１で受け止めて薬液タンクに回収することが
できる。なお、案内部材２２を第１の高さＨ１から第２
の高さＨ２に下降させるのに要する時間は約１秒である
ので、インターバル時間ＩＴとしては、（ＨＴ＋１）秒
に設定される。When the chemical solution supply time MT elapses, the control unit 1
2 stops the supply of the chemical solution. Then, the scattering time HT required after the supply of the chemical solution to the substrate W is stopped until the chemical solution already supplied to the substrate W is scattered from the outer peripheral portion of the substrate W.
(Seconds), the processing cup 21 is kept at the processing height HP from the state of FIG. 10, and the guide member 22 is kept at the second height lower than the first height H1, as shown in FIG. The pure water guide 52 is positioned on the side of the substrate W. With this operation, after the supply of the chemical solution to the substrate W is stopped, the chemical solution remaining on the substrate W can also be received by the chemical solution guiding unit 51 and collected in the chemical solution tank. Note that the guide member 22 is moved from the first height H1 to the second height H1.
Is about 1 second, and the interval time IT is set to (HT + 1) seconds.
【００５３】インターバル時間ＩＴが経過すると、基板
Ｗに純水が供給されてリンス処理が行われる。この状態
では、基板Ｗの外周部から側方に飛散された純水は、純
水案内部５２で受け止められ、純水回収槽３２に導か
れ、純水回収口３５、純水廃棄配管３６を経て廃棄され
る。After the elapse of the interval time IT, pure water is supplied to the substrate W to perform a rinsing process. In this state, the pure water scattered laterally from the outer peripheral portion of the substrate W is received by the pure water guide portion 52, guided to the pure water recovery tank 32, and connected to the pure water recovery port 35 and the pure water disposal pipe 36. After being discarded.
【００５４】図１１の状態では、薬液回収槽３１と純水
回収槽３２とを仕切る仕切り部材３０の先端は、薬液案
内部５１に形成された下向き凹部５３に入り込んでいる
ので、純水案内部５２で受け止められた純水が、薬液回
収槽３１に導かれることはない。このとき、純水案内部
５２に形成された横向き凹部５４は、純水案内部５２で
受け止めた処理液が装置外部に飛び出すことを防止す
る。また、横向き凸部５０の先端に下向きに形成された
舌部５０ａは、純水案内部５２からの処理液を、その下
方の純水回収槽３２にスムーズに導く。さらに、純水案
内部５２の上方に形成された上向き凸部５５は、基板Ｗ
からの処理液の飛沫が装置外に飛び出すとこを防止す
る。この点については、案内部材２２が第１の高さＨ１
にある場合も同様である。In the state shown in FIG. 11, the leading end of the partition member 30 for partitioning the chemical solution recovery tank 31 and the pure water recovery tank 32 enters the downward recess 53 formed in the chemical solution guide section 51. The pure water received at 52 is not guided to the chemical solution recovery tank 31. At this time, the lateral recess 54 formed in the pure water guide 52 prevents the processing liquid received by the pure water guide 52 from jumping out of the apparatus. Further, the tongue 50 a formed downward at the tip of the lateral projection 50 smoothly guides the treatment liquid from the pure water guide 52 to the pure water recovery tank 32 below the treatment liquid. Further, the upward convex portion 55 formed above the pure water guide portion 52 is
This prevents droplets of the processing liquid from jumping out of the apparatus. In this regard, the guide member 22 has a first height H1.
The same applies to the case where
【００５５】純水供給時間ＰＴが経過すると、制御部１
２は純水の供給を停止する。そして、案内部材２２の位
置を図１１の状態に維持して、基板Ｗの回転を継続して
基板Ｗの乾燥処理を行う。このとき、回転状態の基板Ｗ
の外周部から基板Ｗに残留していた純水が飛散される
が、この純水も純水案内部５２で受け止めて廃棄するこ
とができる。When the pure water supply time PT has elapsed, the control unit 1
2 stops the supply of pure water. Then, while the position of the guide member 22 is maintained in the state shown in FIG. 11, the rotation of the substrate W is continued to perform the drying process of the substrate W. At this time, the rotating substrate W
The pure water remaining on the substrate W is scattered from the outer peripheral portion of the substrate W. The pure water can be received by the pure water guide 52 and discarded.
【００５６】乾燥時間ＤＴが経過すると、制御部１２は
スピンチャック１５の回転を停止させる。そして、図１
１の状態から図９の状態に処理カップ２１及び案内部材
２２を下降させ、スピンチャック１５による基板Ｗの保
持を解除させる。この状態で、搬送ロボットによって基
板Ｗが装置外に搬出される。After the elapse of the drying time DT, the controller 12 stops the rotation of the spin chuck 15. And FIG.
The processing cup 21 and the guide member 22 are lowered from the state of FIG. 1 to the state of FIG. 9, and the holding of the substrate W by the spin chuck 15 is released. In this state, the substrate W is carried out of the apparatus by the transfer robot.
【００５７】以上のように、本実施形態によれば、処理
に使用した後の薬液と純水とを良好に分離回収すること
ができる。As described above, according to the present embodiment, it is possible to satisfactorily separate and recover the chemical solution and the pure water after use in the treatment.
【００５８】また、本実施形態装置で従来の処理方法に
より洗浄処理を行うと、以下のような欠点がある。すな
わち、従来の処理方法では、薬液洗浄処理の開始からリ
ンス処理の終了まで、薬液または／および純水が基板Ｗ
に連続して供給されているので、この間常に基板Ｗの外
周部からは薬液または／および純水が飛散されることに
なる。従って、薬液回収と純水回収とを切り換えるため
に案内部材２２を第１の高さＨ１から第２の高さＨ２へ
下降させる途中、横向き凸部５０が基板Ｗの側方を通過
する際に、基板Ｗの外周部から飛散された液が、横向き
凸部５０で跳ね返って純水案内部５２の天面５４ａや上
向き凸部５５の円筒内壁面などに付着し、基板Ｗへの液
ダレやボタ落ちの原因となり、処理前や処理中に基板Ｗ
に液が落ちると処理が不均一になるし、乾燥処理を終え
た基板Ｗに液が落ちると処理の仕上がり精度が悪くな
る。これに対して、本実施形態の方法では、案内部材２
２を第１の高さＨ１から第２の高さＨ２へ下降させる動
作を、インターバル時間ＩＴの間、特に基板Ｗからの薬
液の飛散を終えた後に行っているので、上記のような不
都合を回避することができる。Further, when the cleaning process is performed by the conventional processing method in the apparatus of the present embodiment, there are the following disadvantages. That is, in the conventional processing method, the chemical solution and / or pure water is supplied to the substrate W from the start of the chemical cleaning process to the end of the rinsing process.
During this time, the chemical solution and / or pure water is constantly scattered from the outer peripheral portion of the substrate W. Accordingly, when the guide member 22 is lowered from the first height H1 to the second height H2 in order to switch between the chemical solution recovery and the pure water recovery, when the lateral protrusion 50 passes the side of the substrate W, The liquid scattered from the outer peripheral portion of the substrate W rebounds at the lateral convex portion 50 and adheres to the top surface 54a of the pure water guide portion 52 and the inner wall surface of the cylinder of the upward convex portion 55. The substrate W may be dropped before or during processing
If the liquid drops on the substrate W after the drying process, the processing becomes uneven. In contrast, in the method of the present embodiment, the guide member 2
2 is performed from the first height H1 to the second height H2 during the interval time IT, particularly after the chemical solution has been scattered from the substrate W. Can be avoided.
【００５９】なお、上記の実施形態では、案内部材２２
を昇降させることによって基板からの処理液を所定の案
内部で受け止めるようにしているが、スピンチャック１
５を昇降させることによって、案内部材２２の所定の案
内部で処理液を受け止めるようにしてもよい。但し、ス
ピンチャック１５の昇降を行わない上記の実施形態の構
成の方が、スピンチャック１５に関連する駆動機構のシ
ールが容易である。In the above embodiment, the guide member 22
The processing liquid from the substrate is received by a predetermined guide portion by raising and lowering the spin chuck.
The processing liquid may be received by a predetermined guide portion of the guide member 22 by raising and lowering the processing liquid 5. However, the configuration of the above-described embodiment in which the spin chuck 15 is not moved up and down is easier to seal the drive mechanism related to the spin chuck 15.
【００６０】また、上記の実施形態では、分離回収した
一方の液を再利用し、他方の液を廃棄する場合を例にし
たが、上記実施形態の構成によれば、分離回収した２液
を個別に廃棄したり、例えば、２種類の薬液を用いた処
理で分離回収した２液をそれぞれ再利用したりする場合
にも適用することができる。Further, in the above embodiment, the case where one of the separated and collected liquids is reused and the other liquid is discarded has been described as an example. However, according to the configuration of the above embodiment, the separated and collected two liquids are used. The present invention can also be applied to the case where the two liquids separated and recovered by the treatment using two kinds of chemical liquids are individually reused or reused.
【００６１】なお、上記の各実施形態では、基板Ｗに薬
液洗浄処理とリンス処理を含む洗浄処理を行う方法及び
装置を例に採り説明したが、その他の第１の処理液、第
２の処理液の組み合わせによる一連の第１、第２の処理
を行う基板処理にも本発明は同様に適用することができ
る。In each of the above embodiments, the method and apparatus for performing the cleaning process including the chemical cleaning process and the rinsing process on the substrate W have been described as an example. The present invention can be similarly applied to a substrate processing for performing a series of first and second processing by a combination of liquids.
【００６２】また、本発明は２工程の処理を行う場合に
限らず、３工程以上の処理を行う場合にも同様に適用す
ることができる。例えば、処理液Ａを基板に供給して処
理Ａを行い、それに続いて処理液Ｂを基板に供給して処
理Ｂを行い、それに続いて処理液Ｃを基板に供給して処
理Ｃを行う場合には、処理Ａ、処理Ｂについては処理Ａ
を第１の処理、処理Ｂを第２の処理とし、処理Ｂ、処理
Ｃについては処理Ｂを第１の処理、処理Ｃを第２の処理
とするように、互いに相前後する２工程の処理を第１、
第２の処理として本発明を適用すればよい。The present invention can be applied not only to the case of performing two-step processing but also to the case of performing three or more steps. For example, when processing A is performed by supplying the processing liquid A to the substrate, processing B is then performed by supplying the processing liquid B to the substrate, and processing C is subsequently performed by supplying the processing liquid C to the substrate. Process A and process B for process A
Are the first process, the process B is the second process, and the processes B and C are two-step processes that are successive to each other such that the process B is the first process and the process C is the second process. The first,
The present invention may be applied as the second processing.
【００６３】さらに、３種類以上の処理液を用いる場合
には、３つ以上の回収路を切換え可能に備えれば、３種
類以上の処理液を分離回収することができる。Further, when three or more types of processing liquids are used, three or more types of processing liquids can be separated and recovered if three or more recovery paths are provided so as to be switchable.
【００６４】また、上記の各実施形態では、半導体ウエ
ハに対して処理を施す装置を例にしたが、本発明は液晶
表示器用のガラス基板などの他の基板に対して処理を施
すための装置にも同様に適用することができる。In each of the above embodiments, an apparatus for performing processing on a semiconductor wafer is described as an example. However, the present invention relates to an apparatus for performing processing on another substrate such as a glass substrate for a liquid crystal display. The same can be applied to.
【００６５】[0065]
【発明の効果】以上の説明から明らかなように、請求項
１に記載の発明に係る基板処理方法によれば、第１処理
液供給時間と第２処理液供給時間との間に、所定時間基
板に第１の処理液及び第２の処理液が供給されないイン
ターバル時間を設けて第１、第２の処理を行うようにし
たので、基板に供給される第１の処理液と第２の処理液
とが基板上に同時に供給されることがなく、２液が基板
上でぶつかることがなくなり、液の跳ね返りを抑制で
き、天井などの構造物に液が付着するのを抑制すること
ができる。従って、基板への液ダレやボタ落ちを軽減す
ることができ、基板への液ダレやボタ落ちに起因した処
理の不均一や処理の仕上がり精度の悪化を軽減できると
ともに、パーティクルの発生も抑制でき、基板の汚染を
軽減することができる。As is apparent from the above description, according to the substrate processing method according to the first aspect of the present invention, the predetermined time is provided between the first processing liquid supply time and the second processing liquid supply time. Since the first and second treatments are performed with an interval time during which the first treatment liquid and the second treatment liquid are not supplied to the substrate, the first treatment liquid supplied to the substrate and the second treatment are performed. The liquid and the liquid are not simultaneously supplied onto the substrate, so that the two liquids do not collide with each other on the substrate, so that the liquid can be prevented from rebounding and the liquid can be prevented from adhering to a structure such as a ceiling. Therefore, liquid dripping and dripping onto the substrate can be reduced, and uneven processing and deterioration in processing accuracy due to liquid dripping and dripping onto the substrate can be reduced, and generation of particles can be suppressed. Accordingly, contamination of the substrate can be reduced.
【００６６】また、インターバル時間の間に、基板に供
給された第１の処理液は基板の外周方向へ広がり、ある
いは、外周部から飛散されているので、インターバル時
間経過後に供給される第２の処理液と第１の処理液とが
基板上で混ざることがなく、基板上での処理液濃度のバ
ラツキをなくすことができ、基板上での処理液濃度のバ
ラツキに起因した基板の処理面内での処理の不均一をな
くすことができる。During the interval time, the first processing liquid supplied to the substrate spreads in the outer peripheral direction of the substrate or is scattered from the outer peripheral portion. The processing liquid and the first processing liquid are not mixed on the substrate, so that the dispersion of the concentration of the processing liquid on the substrate can be eliminated, and the processing surface of the substrate caused by the fluctuation of the concentration of the processing liquid on the substrate can be eliminated. Unevenness in the process can be eliminated.
【００６７】さらに、第１の処理液と第２の処理液とが
基板上で混ざることがないので、基板に供給した第１の
処理液と第２の処理液とを好適に分離回収することが可
能となる。また、インターバル時間を設けているので、
このインターバル時間の間に回収路の切換えを行うこと
ができ、回収路の切換え中に第１、第２の処理液が回収
できないなどの不都合も解消できる。Further, since the first processing liquid and the second processing liquid are not mixed on the substrate, the first processing liquid and the second processing liquid supplied to the substrate are preferably separated and recovered. Becomes possible. Also, because there is an interval time,
The recovery path can be switched during this interval time, and the inconvenience that the first and second processing liquids cannot be recovered during the switching of the recovery path can be solved.
【００６８】請求項２に記載の発明によれば、上記請求
項１に記載の発明に係る基板処理方法を好適に実施し得
る基板処理装置を実現することができる。According to the second aspect of the present invention, it is possible to realize a substrate processing apparatus capable of suitably executing the substrate processing method according to the first aspect of the present invention.
【００６９】請求項３に記載の発明によれば、第１の処
理液を回収する第１の回収路と第２の処理液を回収する
第２の回収路とを備え、インターバル時間中に、第１の
回収路から第２回収路への切換えを行うように構成して
いるので、第１の処理液と第２の処理液を好適に分離回
収することができる基板処理装置を実現することができ
る。According to the third aspect of the present invention, there is provided the first recovery path for recovering the first processing liquid and the second recovery path for recovering the second processing liquid, and during the interval time, Since the switching from the first recovery path to the second recovery path is performed, a substrate processing apparatus capable of suitably separating and recovering the first processing liquid and the second processing liquid is realized. Can be.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の一実施例に係る基板処理装置の要部構
成を示す正面図である。FIG. 1 is a front view showing a main configuration of a substrate processing apparatus according to an embodiment of the present invention.
【図２】本発明に係る基板処理方法を示すタイムチャー
トである。FIG. 2 is a time chart illustrating a substrate processing method according to the present invention.
【図３】実施形態に係る装置による洗浄処理を説明する
ための動作説明図である。FIG. 3 is an operation explanatory diagram for explaining a cleaning process by the apparatus according to the embodiment;
【図４】開閉弁の開閉タイミングと基板への処理液の実
際の供給、停止タイミングとにタイムラグがある場合の
制御方法を示すタイムチャートである。FIG. 4 is a time chart showing a control method when there is a time lag between the opening / closing timing of the on-off valve and the actual supply / stop timing of the processing liquid to the substrate.
【図５】本発明の別の実施形態に係る基板処理装置の要
部構成を示す正面図とスピンチャックの平面図である。FIG. 5 is a front view showing a main configuration of a substrate processing apparatus according to another embodiment of the present invention, and a plan view of a spin chuck.
【図６】本発明のさらに別の実施形態に係る基板処理装
置の要部構成を示す正面図とスピンチャックの平面図で
ある。FIG. 6 is a front view showing a main configuration of a substrate processing apparatus according to still another embodiment of the present invention, and a plan view of a spin chuck.
【図７】薬液と純水とを分離回収する機能を備えた実施
形態に係る基板処理装置の一例の構成を示す縦断面図で
ある。FIG. 7 is a longitudinal sectional view illustrating a configuration of an example of a substrate processing apparatus according to an embodiment having a function of separating and recovering a chemical solution and pure water.
【図８】図７の装置の制御系の構成を示すブロック図で
ある。8 is a block diagram showing a configuration of a control system of the device shown in FIG.
【図９】図７の装置の基板の搬入／搬出時の状態を示す
図である。FIG. 9 is a view showing a state of loading / unloading a substrate in the apparatus of FIG. 7;
【図１０】図７の装置の薬液洗浄処理時の状態を示す図
である。FIG. 10 is a view showing a state of the apparatus shown in FIG. 7 at the time of a chemical solution cleaning process.
【図１１】図７の装置のリンス処理及び乾燥処理時の状
態を示す図である。11 is a diagram showing a state of the apparatus of FIG. 7 during a rinsing process and a drying process.
【図１２】従来装置の要部構成を示す図である。FIG. 12 is a diagram showing a main configuration of a conventional device.
【図１３】従来の処理方法を示すタイムチャートであ
る。FIG. 13 is a time chart showing a conventional processing method.
【図１４】従来方法の問題点を説明するための図であ
る。FIG. 14 is a diagram for explaining a problem of the conventional method.
１、１４、１５：スピンチャック ３：電動モーター ４：薬液ノズル ５：純水ノズル １２：制御部 １６ａ：処理液供給部 ２１：処理カップ ２２：案内部材 ２３：昇降駆動機構 ３１：薬液回収槽 ３２：純水回収槽 ３３：薬液回収管 ３４：薬液回収口 ３５：純水回収口 ３６：純水廃棄配管 ５１：薬液案内部 ５２：純水案内部 Ｗ：基板 ＭＴ：薬液供給時間 ＰＴ：純水供給時間 ＩＴ：インターバル時間 1, 14, 15: Spin chuck 3: Electric motor 4: Chemical liquid nozzle 5: Pure water nozzle 12: Control unit 16a: Processing liquid supply unit 21: Processing cup 22: Guide member 23: Elevating drive mechanism 31: Chemical liquid recovery tank 32 : Pure water recovery tank 33: Chemical recovery pipe 34: Chemical recovery port 35: Pure water recovery port 36: Pure water disposal pipe 51: Chemical liquid guide 52: Pure water guide W: Substrate MT: Chemical supply time PT: Pure water Supply time IT: Interval time
Claims (3)
液供給時間の間第１の処理液を基板に供給して第１の処
理を行い、それに続いて所定の第２処理液供給時間の間
第２の処理液を基板に供給して第２の処理を行う基板処
理方法において、 前記第１処理液供給時間と前記第２処理液供給時間との
間に、所定時間基板に第１の処理液及び第２の処理液が
供給されないインターバル時間を設けたことを特徴とす
る基板処理方法。1. A first processing liquid is supplied to a substrate for a predetermined first processing liquid supply time while rotating the substrate to perform a first processing, followed by a predetermined second processing liquid supply time. A second processing liquid being supplied to the substrate during the second processing, wherein the first processing liquid is supplied to the substrate for a predetermined time between the first processing liquid supply time and the second processing liquid supply time. A substrate processing method, wherein an interval time during which the processing liquid and the second processing liquid are not supplied is provided.
転手段と、 前記基板保持手段に保持された基板に第１の処理液を供
給する第１の処理液供給手段と、 前記基板保持手段に保持された基板に第２の処理液を供
給する第２の処理液供給手段と、 前記基板保持手段に保持された基板を回転させながら、
所定の第１処理液供給時間の間、前記第１の処理液供給
手段によって第１の処理液を基板に供給して第１の処理
を行わせ、前記第１処理液供給時間の終了後、所定時間
基板に第１の処理液及び第２の処理液が供給されないイ
ンターバル時間を経てから、所定の第２処理液供給時間
の間、前記第２の処理液供給手段によって第２の処理液
を基板に供給して第２の処理を行わせる制御手段と、 を備えたことを特徴とする基板処理装置。2. A substrate holding means for holding a substrate, a substrate rotating means for rotating a substrate held by the substrate holding means, and a first processing liquid for supplying a first processing liquid to the substrate held by the substrate holding means. 1 processing liquid supply means, second processing liquid supply means for supplying a second processing liquid to the substrate held by the substrate holding means, and while rotating the substrate held by the substrate holding means,
During a predetermined first processing liquid supply time, the first processing liquid is supplied to the substrate by the first processing liquid supply means to perform the first processing, and after the first processing liquid supply time ends, After an interval time during which the first processing liquid and the second processing liquid are not supplied to the substrate for a predetermined time, the second processing liquid is supplied by the second processing liquid supply means for a predetermined second processing liquid supply time. Control means for supplying the substrate to the substrate to perform the second processing.
て、 回転状態の基板から飛散される第１の処理液を回収する
第１の回収路と、 回転状態の基板から飛散される第２の処理液を回収する
第２の回収路と、 基板からの処理液を前記第１の回収路で回収する状態
と、前記第２の回収路で回収する状態とで切り換える切
換え手段と、 をさらに備え、 前記制御手段は、第１の処理に先立ち、基板からの処理
液を前記第１の回収路で回収する状態にするとともに、
前記インターバル時間の間に、基板からの処理液を前記
第１の回収路で回収する状態から前記第２の回収路で回
収する状態に切り換えるように前記切換え手段を制御す
ることを特徴とする基板処理装置。3. The substrate processing apparatus according to claim 2, wherein a first recovery path for recovering the first processing liquid scattered from the rotating substrate, and a second recovery path scattered from the rotating substrate. A second recovery path for recovering the processing liquid; and switching means for switching between a state in which the processing liquid from the substrate is recovered in the first recovery path and a state in which the processing liquid is recovered in the second recovery path. The control means sets a state in which the processing liquid from the substrate is recovered in the first recovery path prior to the first processing,
Wherein the switching means is controlled so as to switch from a state in which the processing liquid from the substrate is recovered in the first recovery path to a state in which the processing liquid is recovered in the second recovery path during the interval time. Processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23564597A JP3785478B2 (en) | 1997-09-01 | 1997-09-01 | Substrate processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23564597A JP3785478B2 (en) | 1997-09-01 | 1997-09-01 | Substrate processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1187292A true JPH1187292A (en) | 1999-03-30 |
| JP3785478B2 JP3785478B2 (en) | 2006-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23564597A Expired - Fee Related JP3785478B2 (en) | 1997-09-01 | 1997-09-01 | Substrate processing method |
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| Country | Link |
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| JP (1) | JP3785478B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7767026B2 (en) | 2005-03-29 | 2010-08-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
| WO2017082064A1 (en) * | 2015-11-10 | 2017-05-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Film processing unit and substrate processing device |
| KR20180012215A (en) * | 2016-07-26 | 2018-02-05 | 가부시키가이샤 스크린 홀딩스 | Substrate processing method and substrate processing apparatus |
-
1997
- 1997-09-01 JP JP23564597A patent/JP3785478B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7767026B2 (en) | 2005-03-29 | 2010-08-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
| WO2017082064A1 (en) * | 2015-11-10 | 2017-05-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Film processing unit and substrate processing device |
| US11004702B2 (en) | 2015-11-10 | 2021-05-11 | SCREEN Holdings Co., Ltd. | Film processing unit and substrate processing apparatus |
| KR20180012215A (en) * | 2016-07-26 | 2018-02-05 | 가부시키가이샤 스크린 홀딩스 | Substrate processing method and substrate processing apparatus |
| US10786836B2 (en) | 2016-07-26 | 2020-09-29 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3785478B2 (en) | 2006-06-14 |
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