JPH1164386A - Probe card - Google Patents
Probe cardInfo
- Publication number
- JPH1164386A JPH1164386A JP22807997A JP22807997A JPH1164386A JP H1164386 A JPH1164386 A JP H1164386A JP 22807997 A JP22807997 A JP 22807997A JP 22807997 A JP22807997 A JP 22807997A JP H1164386 A JPH1164386 A JP H1164386A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- substrate
- probe needle
- card device
- probe card
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は半導体ＩＣのウエ
ハテストに用いられるプローブカード装置のプローブ針
部に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe needle portion of a probe card device used for a semiconductor IC wafer test.
【０００２】[0002]
【従来の技術】一般に、ＩＣ、ＬＳＩなどを製造する工
程の中に、ウエハ上の個々のチップが良品か不良品かを
テストするウエハテスト工程がある。このウエハテスト
は、通常プローバと呼ばれる装置にプローブカードを装
着しプローブカードのプローブ針をウエハのチップ上の
所定の電極に電気的に接触するようコンタクトさせて行
われる。図４は実開昭５７−１４６３４０号公報に示さ
れた従来のプローブカード装置における要部の概略構成
を示す平面図、図５は図４における線Ｖ−Ｖに沿った断
面図である。図において、１はプリント基板１ａ上に抵
抗、コンデンサ、リードリレー等の電子部品２が搭載さ
れてなる基板部、３は例えば基材がタングステンでなり
一端の接続部３ａがプリント基板１ａのパターンに半田
付けされ他端の先端部３ｂが被検査基板であるウエハの
電極（図示せず）と電気的に接触する複数のプローブ
針、４はプローブ針３を整列配置して保持する保持枠、
５は保持枠４を基板部１に固定するビスでこれら３ない
し５でプローブ針部６を構成する。2. Description of the Related Art Generally, in a process for manufacturing an IC, an LSI, etc., there is a wafer test process for testing whether individual chips on a wafer are good or defective. This wafer test is carried out by mounting a probe card on a device usually called a prober and bringing the probe needles of the probe card into electrical contact with predetermined electrodes on the chip of the wafer. FIG. 4 is a plan view showing a schematic configuration of a main part of a conventional probe card device disclosed in Japanese Utility Model Laid-Open No. 57-146340, and FIG. 5 is a sectional view taken along line VV in FIG. In the drawing, reference numeral 1 denotes a substrate portion on which electronic components 2 such as a resistor, a capacitor, and a reed relay are mounted on a printed substrate 1a; A plurality of probe needles 4 which are soldered and whose other end 3b is in electrical contact with an electrode (not shown) of a wafer as a substrate to be inspected; 4, a holding frame for aligning and holding the probe needles 3;
Reference numeral 5 denotes a screw for fixing the holding frame 4 to the substrate 1, and these 3 to 5 constitute a probe needle 6.
【０００３】次に動作について説明する。ウエハテスト
時にはプローブ針３はその先端部３ｂが被検査基板であ
るウエハの電極と電気的に接触するようコンタクトされ
試験信号の送受信をさせる。ここで、プローブ針３の先
端部３ｂには高導電性の他に耐摩耗性等のコンタクト性
能が要求される。Next, the operation will be described. At the time of a wafer test, the probe needle 3 is contacted so that its tip 3b is in electrical contact with the electrode of the wafer to be inspected, and transmits and receives a test signal. Here, the tip portion 3b of the probe needle 3 is required to have not only high conductivity but also contact performance such as wear resistance.
【０００４】上記のコンタクト性能の向上に対する対策
として、プローブ針先の材質を変更する。即ち、イリジ
ウム合金を使用する、また接触部のみの材質をロジウム
またはイリジウムとする等が示されているがいずれもプ
ローブ針が高価なものとなる。そこで、プローブ針の先
端部を薄膜形成法としてのドライプロセスのイオン窒化
法等により表面改質する表面改質法により耐摩耗性の向
上を図る方法も示されている。As a countermeasure against the above-mentioned improvement in contact performance, the material of the probe tip is changed. That is, the use of an iridium alloy and the use of rhodium or iridium as the material of only the contact portion are disclosed, but all of them require expensive probe needles. Therefore, a method of improving wear resistance by a surface modification method in which the tip of the probe needle is surface-modified by a dry process ion nitridation method or the like as a thin film formation method is also disclosed.
【０００５】[0005]
【発明が解決しようとする課題】従来のプローブカード
装置は以上のように構成され、プローブ針３の先端部３
ｂの表面改質処理は各先端面に均等に精度良く薄膜形成
させることが必要であり、プローブ針３が整列配置され
た一体形状の状態で行うことが望ましい。しかし基板部
１とプローブ針部が一体化されていて基板部１の電子部
品が薄膜形成法による真空中での処理に耐えられないた
め、表面改質は各プローブ針３を単品状態で実施し表面
改質後整列配置して組み込むことが必要であった。この
ため、各プローブ針３における薄膜形成の均等および精
度に支障を生ずるという問題点があった。The conventional probe card device is constructed as described above, and the distal end 3 of the probe needle 3 is provided.
It is necessary to form a thin film uniformly and accurately on each end face of the surface modification treatment b, and it is desirable to perform the treatment in an integrated state in which the probe needles 3 are arranged and arranged. However, since the substrate part 1 and the probe needle part are integrated and the electronic components of the substrate part 1 cannot withstand the processing in a vacuum by the thin film forming method, the surface modification is performed with each probe needle 3 as a single piece. After surface modification, it was necessary to arrange and incorporate. For this reason, there is a problem that the uniformity and accuracy of the thin film formation on each probe needle 3 are hindered.
【０００６】この発明は上記のような問題点を解消する
ためになされたもので、プローブ針先端を均一に表面改
質することができるプローブカード装置を得ることを目
的とする。The present invention has been made to solve the above problems, and has as its object to provide a probe card device capable of uniformly modifying the surface of the tip of a probe needle.
【０００７】[0007]
【課題を解決するための手段】この発明の請求項１に係
るプローブカード装置は、電子部品が組み込まれてなる
基板部と、複数のプローブ針が整列配置され基板部と電
気的に接続されるプローブ針部とで形成されプローブ針
先端をウエハ電極と接触させウエハテストをするプロー
ブカード装置において、プローブ針部は基板部と着脱可
能に形成されているものである。According to a first aspect of the present invention, there is provided a probe card device in which a substrate on which electronic components are incorporated and a plurality of probe needles are arranged and electrically connected to the substrate. In a probe card device formed with a probe needle portion and performing a wafer test by bringing the tip of the probe needle into contact with a wafer electrode, the probe needle portion is formed to be detachable from the substrate portion.
【０００８】また、この発明の請求項２に係るプローブ
カード装置は、請求項１において、基板部とプローブ針
との接続は導電性ゴム部材を介して行われているもので
ある。According to a second aspect of the present invention, there is provided a probe card device according to the first aspect, wherein the connection between the substrate and the probe needle is made via a conductive rubber member.
【０００９】[0009]
実施の形態１．以下、この発明の実施の形態１を図につ
いて説明する。図１はこの発明の実施の形態１によるプ
ローブカード装置における要部の概略構成を示す平面
図、図２は図１における線ＩＩ−ＩＩに沿った断面図
で、（Ａ）に針部が基板部と接続された状態を、（Ｂ）
に針部が基板部から分離された状態を示している。図３
はプローブ針を表面改質する装置の内部の構成を示す概
略図である。図において、７はプリント基板７ａ上に抵
抗、コンデンサ、リードリレー等の電子部品８が搭載さ
れてなる基板部、９は例えば基材がタングステンでなり
一端がプリント基板７ａのパターンとの接点部９ａを他
端が被検査基板であるウエハの電極（図示せず）に接触
する先端部９ｂを形成する複数のプローブ針、１０はプ
リント基板７ａのパターンとプローブ針９の接点部９ｂ
間に介在し電気的な導通をさせる導電性ゴム部材、１１
はプローブ針９を整列配置して保持する保持枠、１２は
保持枠１１を基板部７の所定位置に固定するとともに保
持枠１１を介してプローブ針９の接点部９ａから導電性
ゴム部材１０を押圧しプリント基板７ａのパターンに圧
接させる固定用ねじで、これら９〜１２でプローブ針部
１３が構成されている。Embodiment 1 FIG. Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing a schematic configuration of a main part in a probe card device according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view taken along line II-II in FIG. (B)
3 shows a state where the needle part is separated from the substrate part. FIG.
FIG. 2 is a schematic diagram showing an internal configuration of a device for modifying the surface of a probe needle. In the figure, reference numeral 7 denotes a substrate portion on which electronic components 8 such as a resistor, a capacitor, and a reed relay are mounted on a printed circuit board 7a; A plurality of probe needles forming a tip 9b whose other end contacts an electrode (not shown) of a wafer to be inspected, and a contact portion 9b of the pattern of the printed board 7a and the probe needle 9
A conductive rubber member interposed between the conductive rubber members to make electrical conduction, 11
Denotes a holding frame for aligning and holding the probe needles 9, 12 denotes fixing the holding frame 11 to a predetermined position on the substrate unit 7, and connecting the conductive rubber member 10 from the contact portion 9 a of the probe needle 9 via the holding frame 11. The probe needle portion 13 is composed of fixing screws 9 to 12 which are pressed and pressed against the pattern of the printed circuit board 7a.
【００１０】次に動作について説明する。基板部７のプ
リント基板７ａのパターンとプローブ針部１３のプロー
ブ針９の接点部９ｂ間に介在した導電性ゴム部材１０が
プローブ針９とプリント基板７ａの接続が接離可能なも
のとして、固定用ねじ１２をゆるめ保持枠１１を取り外
すことによりプローブ針部１３を基板部７と容易に分離
させることができ、以下に説明するプローブ針９、先端
部９ｂの耐摩耗性向上対策としての表面改質処理が基板
部７に影響をおよぼすことなく実施できる。Next, the operation will be described. A conductive rubber member 10 interposed between the pattern of the printed circuit board 7a of the substrate section 7 and the contact portion 9b of the probe needle 9 of the probe needle section 13 is fixed so that the connection between the probe needle 9 and the printed circuit board 7a can be connected and separated. By loosening the screw 12 and removing the holding frame 11, the probe needle 13 can be easily separated from the substrate 7, and the surface modification as a measure for improving the wear resistance of the probe needle 9 and the tip 9b described below. Quality processing can be performed without affecting the substrate unit 7.
【００１１】以下、ここで実施する表面改質処理につい
て説明する。摩擦摩耗特性の向上を目的とした表面改質
法としてイオン窒化法がある。イオン窒化は０．１〜１
ＫＰａの低い圧力の窒素と水素の混合ガス中でプローブ
針９を陰極として直流電圧を加え、グロー放電によって
生成した窒素イオンをプローブ針９の先端部９ｂの表面
に衝突させて表面改質させる方法である。なお、窒化法
には、この他にガス窒化法、液体窒化法があるが、プロ
ーブカード装置では、公害問題が無く、プローブ針の加
熱の省略が可能であるこのイオン窒化法が好ましい。Hereinafter, the surface modification treatment performed here will be described. There is an ion nitriding method as a surface modification method for improving friction and wear characteristics. 0.1 to 1 for ion nitriding
A method in which a DC voltage is applied using a probe needle 9 as a cathode in a mixed gas of nitrogen and hydrogen at a low pressure of KPa, and nitrogen ions generated by glow discharge are caused to collide with the surface of the tip 9b of the probe needle 9 to modify the surface. It is. In addition, the nitriding method includes a gas nitriding method and a liquid nitriding method. However, in the probe card device, the ion nitriding method which has no pollution problem and can omit the heating of the probe needle is preferable.
【００１２】次に、タングステン製のプローブ針９の先
端表面の垂直方向から例えば窒素元素を進入させて表面
改質させるイオン窒化の具体的な条件を、容器の密閉度
０．５〜１０Ｔｏｒｒ、ガス雰囲気Ｈ2＋Ｎ2、またはＮ
Ｈ3、陰極は非処理物であるプローブ針、陽極は密閉容
器、電圧１００〜１５００Ｖとして、この時発生するイ
オン化窒素をプローブ針９の先端面に対して垂直方向か
ら衝突させて、この衝突エネルギで加熱反応し窒化させ
る。図３はこの状態を模式したもので、１４は処理容器
である密閉容器、１５はイオン化窒素が放出されるブロ
ー放電発生部を示している。なお、この条件のイオン窒
化によってプローブ針９の先端部９ｂの硬さは、窒化前
のビッカース硬さは５００Ｈｖから窒化後のビッカース
硬さ８００Ｈｖに向上し耐摩耗性が改善された。Next, the specific conditions of the ion nitriding for modifying the surface by, for example, injecting nitrogen element from the vertical direction of the tip surface of the tungsten probe needle 9 are set as follows. Atmosphere H 2 + N 2 or N
H 3 , the cathode is a probe needle which is an unprocessed material, the anode is a sealed container, and the voltage is 100 to 1500 V. The ionized nitrogen generated at this time is caused to collide with the tip surface of the probe needle 9 in a vertical direction, and the collision energy And a nitriding reaction is performed. FIG. 3 schematically illustrates this state, in which reference numeral 14 denotes a closed container which is a processing container, and reference numeral 15 denotes a blow discharge generating section from which ionized nitrogen is released. The hardness of the tip portion 9b of the probe needle 9 was increased from 500 Hv before nitriding to 800 Hv after nitriding by nitriding under the above conditions, and the wear resistance was improved.
【００１３】このようにプローブ針９とプリント基板７
ａとの接続を導電性ゴム部材１０にすることによりプロ
ーブ針部１３と基板部７とを簡単に着脱できるようにし
たので、プローブ針９の各先端部９ｂを均等に表面改質
処理することができる。As described above, the probe needle 9 and the printed board 7
Since the probe needle portion 13 and the substrate portion 7 can be easily attached and detached by using a conductive rubber member 10 for connection with a, the tip 9b of the probe needle 9 can be uniformly surface-modified. Can be.
【００１４】また、プローブ針部１３を基板部７と分離
しプローブ針部１３のみで表面改質するようにしたの
で、処理時の安全性を高めることができる。Further, since the probe needle section 13 is separated from the substrate section 7 and the surface is modified only by the probe needle section 13, safety during processing can be enhanced.
【００１５】なお、上記実施の形態１の説明ではプロー
ブ針部１３のプローブ針９の先端部９ｂの表面改質法と
して薄膜形成法をイオン窒化法としたが、ＰＶＤ法ある
いはＣＶＤ法による薄膜形成法での表面改質を実施する
場合、このプローブカード装置の構成であれば同様の効
果が得られることはいうまでもない。In the description of the first embodiment, the thin film forming method is the ion nitriding method as the surface modification method of the tip 9b of the probe needle 9 of the probe needle section 13. However, the thin film forming method by the PVD method or the CVD method. It is needless to say that the same effect can be obtained when the surface is modified by the method using the structure of the probe card device.
【００１６】[0016]
【発明の効果】以上のようにこの発明の請求項１によれ
ば、電子部品が組み込まれてなる基板部と、複数のプロ
ーブ針が整列配置され基板部と電気的に接続されるプロ
ーブ針部とで形成されプローブ針先端をウエハ電極と接
触させウエハテストをするプローブカード装置におい
て、プローブ針部は基板部と着脱可能に形成されている
ので、プローブ針の各先端部を均等に表面改質したプロ
ーブカード装置が得られる効果がある。As described above, according to the first aspect of the present invention, a substrate portion in which electronic components are incorporated, and a probe needle portion in which a plurality of probe needles are arranged and electrically connected to the substrate portion. In the probe card device that performs the wafer test by bringing the tip of the probe needle into contact with the wafer electrode, the probe needle is formed to be detachable from the substrate, so that each tip of the probe needle is evenly surface-modified. Thus, there is an effect that a probe card device having the above configuration can be obtained.
【００１７】また、この発明の請求項２によれば、請求
項１において、基板部とプローブ針との接続は導電性ゴ
ム部材を介して行われているので、プローブ針の各先端
部を均等に表面改質したプローブカード装置が得られる
効果がある。According to a second aspect of the present invention, in the first aspect, since the connection between the substrate and the probe needle is made via a conductive rubber member, each tip of the probe needle can be evenly distributed. Thus, there is an effect that a probe card device whose surface is modified can be obtained.
【図１】 この発明の実施の形態１によるプローブカー
ド装置における要部の概略構成を示す平面図である。FIG. 1 is a plan view showing a schematic configuration of a main part in a probe card device according to a first embodiment of the present invention.
【図２】 図１における線ＩＩ−ＩＩに沿った断面を示
し、（Ａ）に針部が基板部と接続された状態を、（Ｂ）
に針部が基板部から分離された状態をそれぞれ示す断面
図である。FIG. 2 shows a cross section taken along line II-II in FIG. 1, and FIG. 2 (A) shows a state where a needle portion is connected to a substrate portion, and FIG.
FIG. 3 is a cross-sectional view showing a state where a needle portion is separated from a substrate portion.
【図３】 この発明の実施の形態１によるプローブカー
ド装置におけるプローブ針を表面改質する装置の内部構
成を示す概略図である。FIG. 3 is a schematic diagram showing an internal configuration of an apparatus for modifying the surface of a probe needle in the probe card device according to the first embodiment of the present invention.
【図４】 従来のプローブカード装置における要部の概
略構成を示す平面図である。FIG. 4 is a plan view showing a schematic configuration of a main part in a conventional probe card device.
【図５】 図４における線Ｖ−Ｖに沿った断面図であ
る。FIG. 5 is a sectional view taken along line VV in FIG. 4;
７ 基板部、８ 電子部品、９ プローブ針、９ｂ 先
端部、１０ 導電性ゴム部材、１３ プローブ針部。7 substrate part, 8 electronic parts, 9 probe needle, 9b tip part, 10 conductive rubber member, 13 probe needle part.
Claims (2)
複数のプローブ針が整列配置され上記基板部と電気的に
接続されるプローブ針部とで形成され上記プローブ針先
端をウエハ電極と接触させウエハテストをするプローブ
カード装置において、上記プローブ針部は上記基板部と
着脱可能に形成されていることを特徴とするプローブカ
ード装置。1. A substrate part on which an electronic component is incorporated,
In a probe card device in which a plurality of probe needles are arranged and arranged and a probe needle portion electrically connected to the substrate portion and a tip of the probe needle is brought into contact with a wafer electrode to perform a wafer test, the probe needle portion is configured as described above. A probe card device which is formed so as to be detachable from a substrate part.
ム部材を介して行われていることを特徴とする請求項１
に記載のプローブカード装置。2. The connection between the substrate and the probe needle is made via a conductive rubber member.
The probe card device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22807997A JPH1164386A (en) | 1997-08-25 | 1997-08-25 | Probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22807997A JPH1164386A (en) | 1997-08-25 | 1997-08-25 | Probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1164386A true JPH1164386A (en) | 1999-03-05 |
Family
ID=16870870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22807997A Pending JPH1164386A (en) | 1997-08-25 | 1997-08-25 | Probe card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1164386A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6799976B1 (en) * | 1999-07-28 | 2004-10-05 | Nanonexus, Inc. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
| JP2013015474A (en) * | 2011-07-06 | 2013-01-24 | Hioki Ee Corp | Probe unit, inspection apparatus and probe unit attaching/detaching method |
-
1997
- 1997-08-25 JP JP22807997A patent/JPH1164386A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6799976B1 (en) * | 1999-07-28 | 2004-10-05 | Nanonexus, Inc. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
| JP2013015474A (en) * | 2011-07-06 | 2013-01-24 | Hioki Ee Corp | Probe unit, inspection apparatus and probe unit attaching/detaching method |
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