JPH11343196A - Single crystal growth equipment - Google Patents
Single crystal growth equipmentInfo
- Publication number
- JPH11343196A JPH11343196A JP15165998A JP15165998A JPH11343196A JP H11343196 A JPH11343196 A JP H11343196A JP 15165998 A JP15165998 A JP 15165998A JP 15165998 A JP15165998 A JP 15165998A JP H11343196 A JPH11343196 A JP H11343196A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- dopant
- shielding member
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体デバイスに
使用されるシリコンウエーハ等の製造に用いられる単結
晶育成装置に関し、更に詳しくは、ＣＺ法を用いた結晶
引き上げによる単結晶育成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for growing a single crystal used for manufacturing a silicon wafer or the like used for a semiconductor device, and more particularly to an apparatus for growing a single crystal by pulling a crystal using a CZ method.
【０００２】[0002]
【従来の技術】ＣＺ法によるシリコン単結晶の育成で
は、図４に示すように、チャンバー１１内の中心部に坩
堝１２を配置し、坩堝１２内に装填された塊状の多結晶
シリコンを、坩堝１２の周囲に配置されたヒータ１４に
より減圧下で溶解することにより、坩堝１２内に原料融
液４０を形成する。そして、引き上げ軸の下端に取り付
けた種結晶を原料融液４０に漬け、これを回転させなが
ら引き上げることにより、種結晶の下に単結晶を育成す
る。2. Description of the Related Art In growing a silicon single crystal by the CZ method, as shown in FIG. 4, a crucible 12 is arranged at the center of a chamber 11 and a massive polycrystalline silicon loaded in the crucible 12 is crucible. The raw material melt 40 is formed in the crucible 12 by melting under reduced pressure by the heater 14 arranged around the periphery 12. Then, the seed crystal attached to the lower end of the pulling shaft is immersed in the raw material melt 40 and pulled while rotating, thereby growing a single crystal under the seed crystal.
【０００３】このようなＣＺ法によるシリコン単結晶の
育成では、単結晶の引き上げ速度を上げるために、コー
ンと呼ばれる逆錐筒状の熱遮蔽部材２０を坩堝１２の上
方に配設するのが最近の傾向である。この熱遮蔽部材２
０は、坩堝１２内の原料融液４０から引き上げられる単
結晶を包囲し、原料融液４０からの輻射熱とヒータ１４
からの輻射熱を遮蔽して単結晶の冷却を促進することに
より、単結晶の引き上げ速度を増大させることが可能で
ある。[0003] In growing a silicon single crystal by the CZ method, an inverted conical cylindrical heat shield member 20 called a cone is recently arranged above the crucible 12 in order to increase the pulling speed of the single crystal. This is the tendency. This heat shielding member 2
0 surrounds the single crystal pulled up from the raw material melt 40 in the crucible 12 and radiates heat from the raw material melt 40 and the heater 14.
By promoting the cooling of the single crystal by shielding the radiant heat from the substrate, the pulling speed of the single crystal can be increased.
【０００４】シリコン単結晶の育成では又、単結晶の比
抵抗を調整するために、各種のドープ剤（ドーパント）
が使用される。代表的なドープ剤はリン、ボロン、アン
チモンなどである。これらのドープ剤のうちリン、ボロ
ンは、坩堝内に原料融液を形成する前、即ちヒータによ
る原料溶解の前に、塊状の多結晶シリコンと共に坩堝内
に投入され、ヒータによる加熱で多結晶シリコンと共に
溶解される。これにより、所定量のドープ剤を含んだ原
料融液が坩堝内に形成される。In growing a silicon single crystal, various dopants (dopants) are used in order to adjust the specific resistance of the single crystal.
Is used. Representative dopants are phosphorus, boron, antimony, and the like. Among these dopants, phosphorus and boron are introduced into the crucible together with the lump of polycrystalline silicon before the raw material melt is formed in the crucible, that is, before the raw material is melted by the heater, and the polycrystalline silicon is heated by the heater. Dissolved with. Thereby, a raw material melt containing a predetermined amount of the dopant is formed in the crucible.
【０００５】これに対し、アンチモンはリン、ボロンと
比べると融点が低く、減圧下では蒸発速度が非常に速く
なるため、リン、ボロンと同様に多結晶シリコンとの同
時溶解を行うと多量に蒸発する。このため、坩堝内で多
結晶シリコンを溶解した後、その融液にドープ剤を添加
するという手順が踏まれる。そして、熱遮蔽部材２０を
備えた単結晶育成装置では、このアンチモンは、熱遮蔽
部材２０の外側に設けられたドープ供給管３０により、
熱遮蔽部材２０の外側を通って坩堝１２内の原料融液４
０に投入されることが、例えば特開平４−２１５８５号
公報に記載されている。On the other hand, antimony has a lower melting point than phosphorus and boron, and its evaporation rate is extremely high under reduced pressure. Therefore, as in the case of phosphorus and boron, simultaneous melting with polycrystalline silicon causes a large amount of evaporation. I do. For this reason, a procedure of dissolving polycrystalline silicon in a crucible and then adding a dopant to the melt is performed. In the single crystal growing apparatus provided with the heat shielding member 20, the antimony is supplied by the dope supply pipe 30 provided outside the heat shielding member 20.
Raw material melt 4 in crucible 12 passing outside heat shield member 20
It is described in, for example, Japanese Patent Application Laid-Open No. Hei 4-21585 that it is charged to 0.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、熱遮蔽
部材２０の外側を通って坩堝１２内の原料融液４０にア
ンチモンを添加する場合には、坩堝１２内に予め原料融
液４０が形成されているとは言え、ヒータ１４からの輻
射熱、更には坩堝１２内に形成されたシリコンの原料融
液４０からの輻射熱により、アンチモンが投入中に高温
に加熱され、原料融液４０に到達する以前に多くが蒸発
するという問題がある。この問題のため、投入量に比し
て融液中のアンチモン濃度が低くなり、所定濃度を確保
しようとすると、多量のアンチモンを余分に投入するこ
とが必要となる。However, when antimony is added to the raw material melt 40 in the crucible 12 through the outside of the heat shielding member 20, the raw material melt 40 is formed in the crucible 12 in advance. However, due to the radiant heat from the heater 14 and the radiant heat from the silicon raw material melt 40 formed in the crucible 12, the antimony is heated to a high temperature during the charging and before reaching the raw material melt 40. There is a problem that many evaporate. Due to this problem, the concentration of antimony in the melt is lower than the charged amount, and it is necessary to add a large amount of extra antimony to secure a predetermined concentration.
【０００７】そこで本発明者らは、図５に示すように、
熱遮蔽部材２０の内側を通って坩堝１２内の原料融液４
０にアンチモンを添加する実験を行った。その結果、投
入中のアンチモンが熱遮蔽部材２０によって周囲の輻射
熱から効果的に遮蔽され、その蒸発が抑制されることが
判明したが、その一方ではアンチモンを添加した後の、
原料融液４０からの単結晶引き上げでは、その単結晶に
有転位化が多発することが明らかとなった。[0007] Then, the present inventors, as shown in FIG.
The raw material melt 4 in the crucible 12 passing through the inside of the heat shielding member 20
An experiment was conducted in which antimony was added to 0. As a result, it was found that the injected antimony was effectively shielded from the surrounding radiant heat by the heat shielding member 20 and its evaporation was suppressed, but on the other hand, after adding antimony,
It was clarified that dislocations occurred frequently in the single crystal when the single crystal was pulled from the raw material melt 40.
【０００８】熱遮蔽部材２０の内側を通ってアンチモン
を投入した場合に有転位化が多発する理由は、後で詳し
く述べるが、その投入に伴う原料融液４０のハネが熱遮
蔽部材２０の内面に粒状に付着し、これが後で原料融液
４０に落下して単結晶に取り込まれることにある。The reason why dislocation frequently occurs when antimony is injected through the inside of the heat shielding member 20 will be described in detail later. In the form of particles, which later fall into the raw material melt 40 and are taken into the single crystal.
【０００９】本発明の目的は、アンチモンのような蒸発
が顕著なドープ剤を原料融液に添加する場合に、そのド
ープ剤の蒸発を効果的に抑え、合わせてドープ剤の添加
に起因する有転位化を防ぐことができる単結晶育成装置
を提供することにある。An object of the present invention is to effectively suppress the evaporation of a dopant such as antimony when the dopant is added to the raw material melt, and the dopant is added to the dopant. An object of the present invention is to provide a single crystal growing apparatus capable of preventing dislocation.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明者らは、熱遮蔽部材を備えた単結晶育成装置
で、その部材内側を通って坩堝内の原料融液にアンチモ
ンを添加する場合の功罪について、詳細な調査を行っ
た。その結果、以下のことが判明し、また確認された。Means for Solving the Problems To achieve the above object, the present inventors have developed a single crystal growing apparatus provided with a heat shielding member, and pass antimony into a raw material melt in a crucible through the inside of the single crystal growing apparatus. A detailed investigation was conducted on the merits and demerits of the addition. As a result, the following was found and confirmed.
【００１１】アンチモンのような蒸発が顕著なドープ剤
を坩堝内の原料融液に添加する場合、熱遮蔽部材の外側
を通すと、その蒸発が顕著となる。この蒸発を抑制する
ためには、熱遮蔽部材の内側を通すことが有効であり、
不可欠である。しかし、熱遮蔽部材の内側を通すと、有
転位化が多発する。その原因は、図５に示すように、ド
ープ剤を投入することによる原料融液４０のハネ４１が
熱遮蔽部材２０の内面に付着して粒状のまま凝固し、こ
の粒がその後の単結晶育成中に原料融液の液面に落下し
て単結晶中に取り込まれることにある。When a doping agent such as antimony, which has a remarkable evaporation, is added to the raw material melt in the crucible, the evaporation becomes remarkable when it passes outside the heat shielding member. In order to suppress this evaporation, it is effective to pass the inside of the heat shielding member,
It is essential. However, dislocations occur frequently when passing through the inside of the heat shielding member. The cause is that, as shown in FIG. 5, the splash 41 of the raw material melt 40 due to the introduction of the doping agent adheres to the inner surface of the heat shielding member 20 and solidifies in a granular state, and this grain grows in the subsequent single crystal growth. This is to fall into the liquid surface of the raw material melt and to be taken into the single crystal.
【００１２】このハネは、熱遮蔽部材の外側を通ってド
ープ剤を投入する場合にも当然生じる。しかし、この場
合は、ハネが熱遮蔽部材の外面に付着する。外面側の雰
囲気温度は内面側より高温のため、外面に付着したハネ
は、その外面で薄く広がり、ベットリと付着した状態で
凝固する。このような状態で凝固したハネは外面から剥
離し難い。このため、その後の単結晶育成中も落下を生
じず、仮に落下しても液状のため有転位化の原因にはな
らない。This splash naturally occurs even when the dopant is introduced through the outside of the heat shielding member. However, in this case, the splash adheres to the outer surface of the heat shielding member. Since the ambient temperature on the outer surface side is higher than that on the inner surface side, the splash attached to the outer surface spreads thinly on the outer surface and solidifies in a state where it adheres to the outer surface. The splash solidified in such a state is difficult to peel off from the outer surface. For this reason, no drop occurs during the subsequent growth of the single crystal, and even if it falls, it does not cause dislocation due to the liquid state.
【００１３】これに対し、熱遮蔽部材の内面に付着した
ハネは、内面側の雰囲気温度が低いために、付着後、粒
状のまま凝固する。このため、熱遮蔽部材の内面から剥
離しやすくなり、剥離して原料融液の液面に落下したも
のは固体のまま単結晶中に取り込まれて有転位化の原因
となる。これが、熱遮蔽部材の内側を通してドープ剤を
添加した場合に有転位化が多発する原因である。実際、
ハネに起因する有転位化は、ドープ剤の添加から間のな
い引き上げ初期に多発する傾向がある。[0013] On the other hand, the spatter adhered to the inner surface of the heat shielding member solidifies in a granular state after the adhering because the ambient temperature on the inner surface side is low. For this reason, it is easy to peel off from the inner surface of the heat shielding member, and the material that peels off and falls on the liquid surface of the raw material melt is taken into the single crystal as a solid and causes dislocation. This is the reason that dislocations occur frequently when a dopant is added through the inside of the heat shielding member. In fact,
Dislocations due to splash tend to occur frequently in the early stage of pulling up shortly after the addition of the dopant.
【００１４】これらの検討結果を踏まえて、本発明者ら
は、熱遮蔽部材の内側を通って途中までドープ剤を投下
し、そのドープ剤を途中から熱遮蔽部材の外側へ導出し
て原料融液に投入することを試みた。その結果、アンチ
モンと言えども蒸発が効果的に抑制され、しかも、ハネ
による有転位化が防止されることが判明した。Based on the results of these studies, the present inventors dropped a dopant halfway through the inside of the heat shielding member, led the dopant out of the middle to the outside of the heat shielding member, and melted the raw material. Attempted to inject into the liquid. As a result, it was found that evaporation was effectively suppressed even for antimony, and that dislocation due to spatter was prevented.
【００１５】本発明の単結晶育成装置は、かかる知見に
基づいて開発されたものであり、坩堝の外側に配置され
たヒータによって坩堝内に原料融液を形成し、その原料
融液からＣＺ法によって単結晶を引き上げる育成装置本
体と、ヒータ及び原料融液からの輻射熱を遮蔽するため
に坩堝の上方に単結晶を包囲するように配設された筒状
の熱遮蔽部材と、坩堝内の原料融液にドープ剤を添加す
るために熱遮蔽部材の内側に配設され、且つ熱遮蔽部材
の中段位置より下方でドープ剤が熱遮蔽部材の外側へ導
出されて坩堝内の原料融液に投入されるように、少なく
とも下端部を熱遮蔽部材の外側に臨ませて配設されたド
ープ供給管とを具備することを構成上の特徴点としてい
る。The single crystal growing apparatus of the present invention has been developed based on such knowledge, and a raw material melt is formed in a crucible by a heater disposed outside the crucible, and the CZ method is performed from the raw material melt. A growing apparatus main body for pulling up a single crystal, a heater and a cylindrical heat shielding member arranged to surround the single crystal above the crucible to shield radiant heat from the raw material melt, and a raw material in the crucible. It is arranged inside the heat shielding member to add a dopant to the melt, and the dopant is led out of the heat shielding member below the middle position of the heat shielding member and is put into the raw material melt in the crucible. Thus, a dope supply pipe provided with at least a lower end portion facing the outside of the heat shielding member is a feature of the configuration.
【００１６】[0016]
【発明の実施の形態】以下に本発明の実施形態を図面に
基づいて説明する。図１は本発明の実施形態に係る単結
晶育成装置の縦断面図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view of a single crystal growing apparatus according to an embodiment of the present invention.
【００１７】本単結晶育成装置は、ＣＺ法によって単結
晶を引き上げる育成装置本体１０と、引き上げ速度を上
げるために育成装置本体１０の内部に設けられた熱遮蔽
部材２０と、ドープ剤を添加するために育成装置本体１
０の内部に設けられたドープ供給管３０とを備えてい
る。The present single crystal growing apparatus includes a growing apparatus main body 10 for pulling a single crystal by the CZ method, a heat shielding member 20 provided inside the growing apparatus main body 10 for increasing the pulling speed, and a dopant. Breeding equipment body 1
0, and a dope supply pipe 30 provided inside.
【００１８】育成装置本体１０は、円筒形状のメインチ
ャンバー１１を備えている。メインチャンバー１１は、
円筒部１１ａ、円筒部１１ａを載置する底板部１１ｂ
（図５参照）、及び円筒部１１ａ上に載置される天板部
１１ｃを組み合わせた構造になっている。天板部１１ｃ
の上には、図示されないプルチャンバーが載置される。
プルチャンバーは引き上げ軸やその回転昇降機構等を有
している。The breeding apparatus main body 10 has a cylindrical main chamber 11. The main chamber 11
Cylindrical portion 11a, bottom plate portion 11b on which cylindrical portion 11a is placed
(See FIG. 5) and a top plate portion 11c mounted on the cylindrical portion 11a. Top plate 11c
A pull chamber (not shown) is placed on the top.
The pull chamber has a lifting shaft, a rotary elevating mechanism, and the like.
【００１９】メインチャンバー１１内には、その中心部
に位置して坩堝１２が配置されている。坩堝１２は内側
の石英坩堝１２ａと外側の黒鉛坩堝１２ｂを組み合わせ
た二重構造になっている。この坩堝１２は、メインチャ
ンバー１１の底板部１１ｂを貫通するペディスタル１３
の上に支持されている。ペディスタル１３は、坩堝１２
の回転及び昇降を行うために周方向及び軸方向に駆動さ
れる。In the main chamber 11, a crucible 12 is disposed at the center thereof. The crucible 12 has a double structure in which an inner quartz crucible 12a and an outer graphite crucible 12b are combined. The crucible 12 has a pedestal 13 penetrating through the bottom plate 11 b of the main chamber 11.
Is supported on. The pedestal 13 is a crucible 12
It is driven in the circumferential direction and the axial direction in order to rotate and move up and down.
【００２０】坩堝１２の外側にはヒータ１４が配置され
ており、そのヒータ１４の外側には断熱材１５がメイン
チャンバー１１の円筒部１１ａ内面に沿って配置されて
いる。また、メインチャンバー１１の底板部１１ｂ上に
も同様の断熱材１６が配置されている。A heater 14 is arranged outside the crucible 12, and a heat insulating material 15 is arranged outside the heater 14 along the inner surface of the cylindrical portion 11 a of the main chamber 11. A similar heat insulating material 16 is also arranged on the bottom plate 11b of the main chamber 11.
【００２１】熱遮蔽部材２０は坩堝１２の上方に同心状
に配置された、コーンと呼ばれる円筒体である。この円
筒体は下方に向かって徐々に縮径した逆台錐形で、メイ
ンチャンバー１１の天板部１１ｃに取り付けられてい
る。The heat shielding member 20 is a cylindrical body called a cone which is arranged concentrically above the crucible 12. The cylindrical body has an inverted truncated cone shape whose diameter gradually decreases downward, and is attached to a top plate 11 c of the main chamber 11.
【００２２】ドープ供給管３０は、熱遮蔽部材２０の内
面にその傾斜に沿って取り付けられた漏斗管である。そ
の下端部は、熱遮蔽部材２０の下部を貫通して熱遮蔽部
材２０の外側に臨んでいる。また、ドープ供給管３０の
上端部は、メインチャンバー１１の外側に設けられたド
ープ剤添加用の治具３１と接続されている。この治具３
１としては、例えば特開平９−２２７２７５号公報に記
載されているドープ剤添加装置を使用することかでき
る。The dope supply tube 30 is a funnel tube attached to the inner surface of the heat shielding member 20 along the inclination thereof. The lower end portion penetrates the lower part of the heat shielding member 20 and faces the outside of the heat shielding member 20. Further, the upper end of the dope supply pipe 30 is connected to a jig 31 for doping agent addition provided outside the main chamber 11. This jig 3
As 1, for example, a doping agent adding device described in JP-A-9-227275 can be used.
【００２３】次に、本単結晶育成装置を使用して、アン
チモンがドープされたシリコン単結晶を製造する場合の
手順について説明する。Next, a procedure for producing a silicon single crystal doped with antimony using the present single crystal growing apparatus will be described.
【００２４】坩堝１２内に塊状の多結晶シリコンを充填
する。メインチャンバー１１内を所定の真空度に排気す
る。ヒータ１３により坩堝１２内の多結晶シリコンを溶
解し、坩堝１２内にシリコン融液４０を形成する。The crucible 12 is filled with massive polycrystalline silicon. The inside of the main chamber 11 is evacuated to a predetermined degree of vacuum. The polycrystalline silicon in the crucible 12 is melted by the heater 13 to form a silicon melt 40 in the crucible 12.
【００２５】坩堝１２内にシリコン融液４０が形成され
ると、メインチャンバー１１の外側に設けられたドープ
剤添加装置により、所定量のアンチモンをドープ供給管
３０に投入する。ここで、ドープ供給管３０は基本的に
熱遮蔽部材２０の内側に配設されており、その下端部の
みが熱遮蔽部材２０の下部を貫通して熱遮蔽部材２０の
外側に臨んでいる。このため、ドープ供給管３０に導入
されたアンチモンは、熱遮蔽部材２０の下部レベルに達
するまでは熱遮蔽部材２０の内側を通り、その後は熱遮
蔽部材２０の外側に導出されて、その外側で坩堝１２内
のシリコン融液４０に投入される。When the silicon melt 40 is formed in the crucible 12, a predetermined amount of antimony is introduced into the dope supply pipe 30 by a doping agent adding device provided outside the main chamber 11. Here, the dope supply pipe 30 is basically disposed inside the heat shield member 20, and only the lower end portion thereof penetrates the lower part of the heat shield member 20 and faces the outside of the heat shield member 20. For this reason, the antimony introduced into the dope supply pipe 30 passes through the inside of the heat shielding member 20 until reaching the lower level of the heat shielding member 20, and thereafter, is led out of the heat shielding member 20, and is led out of the outside. It is put into the silicon melt 40 in the crucible 12.
【００２６】熱遮蔽部材２０の内側は外側より低温であ
るので、ドープ供給管３０内を通過するアンチモンの蒸
発が抑制される。最終的には、熱遮蔽部材２０の外側で
シリコン融液４０へのアンチモン投入が行われるので、
その投入に伴うハネは熱遮蔽部材２０の外面に付着す
る。しかし、そのハネは、熱遮蔽部材２０の外面で薄く
広がりベッタリと付着した状態で凝固するので、落下し
難く、有転位化の原因にはならない。Since the inside of the heat shielding member 20 is lower in temperature than the outside, the evaporation of antimony passing through the dope supply pipe 30 is suppressed. Finally, since antimony is injected into the silicon melt 40 outside the heat shielding member 20,
Splashes resulting from the introduction adhere to the outer surface of the heat shielding member 20. However, since the splash spreads thinly on the outer surface of the heat shielding member 20 and solidifies in a state where it adheres to the bottom, it hardly falls and does not cause dislocation.
【００２７】このようにしてアンチモンの投入が行われ
ることにより、坩堝１２内には、アンチモンが所定濃度
にドープされたシリコン融液４０が形成される。By introducing antimony in this manner, a silicon melt 40 doped with antimony at a predetermined concentration is formed in the crucible 12.
【００２８】シリコン融液４０の形成が終わると、引き
上げ軸の下端に装着された種結晶をシリコン融液４０に
漬け、この状態から引き上げ軸を回転させながら引き上
げる。これにより、種結晶の下方に、アンチモンがドー
プされたシリコン単結晶が育成される。育成結晶は熱遮
蔽部材２０の内側を通り、プルチャンバー内に引き込ま
れる。このとき、坩堝１２は逆方向に回転する。また、
単結晶の引き上げに伴う坩堝１２内の液面低下を相殺す
るべく上昇する。When the formation of the silicon melt 40 is completed, the seed crystal mounted on the lower end of the pulling shaft is immersed in the silicon melt 40, and from this state, the seed crystal is pulled while rotating the pulling shaft. As a result, a silicon single crystal doped with antimony is grown below the seed crystal. The grown crystal passes through the inside of the heat shielding member 20 and is drawn into the pull chamber. At this time, the crucible 12 rotates in the opposite direction. Also,
It rises to offset the drop in the liquid level in crucible 12 due to the pulling of the single crystal.
【００２９】アンチモン投入後の単結晶育成では、熱遮
蔽部材２０からのハネの落下がなく、有転位化が防止さ
れる。In the growth of the single crystal after the injection of antimony, there is no drop of the splash from the heat shielding member 20 and the dislocation is prevented.
【００３０】[0030]
【実施例】次に、本発明の実施例を示し、比較例と対比
することにより、本発明の効果を明らかにする。Next, the effects of the present invention will be clarified by showing examples of the present invention and comparing them with comparative examples.
【００３１】本発明の実施例として、図１に示された単
結晶育成装置を使用して、アンチモンがドープされたシ
リコン単結晶を育成した。坩堝の内径は石英坩堝の内径
で１６インチとした。多結晶シリコンの充填量は３５ｋ
ｇ、アンチモンの投入量は３００ｇとした。育成結晶の
直径は５インチ、結晶方位は＜１００＞である。As an example of the present invention, a silicon single crystal doped with antimony was grown using the single crystal growing apparatus shown in FIG. The inner diameter of the crucible was 16 inches as the inner diameter of the quartz crucible. 35k polycrystalline silicon filling
g and the amount of antimony added were 300 g. The diameter of the grown crystal is 5 inches, and the crystal orientation is <100>.
【００３２】比較例１として、図４に示された単結晶育
成装置を使用し、坩堝内のシリコン融液にアンチモンを
投入する際に、その投入を熱遮蔽部材の外側で行った。
それ以外は実施例と同じである。As Comparative Example 1, when the single crystal growing apparatus shown in FIG. 4 was used, when charging antimony into the silicon melt in the crucible, the charging was performed outside the heat shielding member.
Other than that is the same as the embodiment.
【００３３】比較例２として、図５に示された単結晶育
成装置を使用し、坩堝内のシリコン融液にアンチモンを
投入する際に、その投入を熱遮蔽部材の内側で行った。
それ以外は実施例と同じである。As Comparative Example 2, when the single crystal growing apparatus shown in FIG. 5 was used and antimony was injected into the silicon melt in the crucible, the injection was performed inside the heat shielding member.
Other than that is the same as the embodiment.
【００３４】それぞれの場合につき引き上げを４０回実
施した。引き上げ歩留りを、実施例及び比較例２の場合
について調査した。その結果を図２に示す。また、全長
引き上げが可能であった単結晶の比抵抗を、実施例及び
比較例１の場合について調査した。その結果を図３に示
す。The lifting was carried out 40 times in each case. The pulling yield was investigated for Examples and Comparative Example 2. The result is shown in FIG. In addition, the specific resistance of the single crystal whose entire length was able to be increased was investigated in the case of Example and Comparative Example 1. The result is shown in FIG.
【００３５】図２及び図３から分かるように、本発明の
実施例では、全長引き上げが可能な操業回数は全操業回
数の５０％を超え、全長引き上げに近い操業を加えると
７０％近くに達する。育成結晶の比抵抗は３００ｇのア
ンチモン使用で約０．０１４Ω・ｃｍを得た。As can be seen from FIGS. 2 and 3, in the embodiment of the present invention, the number of operations capable of raising the full length exceeds 50% of the total number of operations, and reaches nearly 70% when an operation close to the total length is added. . The specific resistance of the grown crystal was about 0.014 Ω · cm using 300 g of antimony.
【００３６】これに対し、坩堝内のシリコン融液にアン
チモンを投入する際に、その投入を熱遮蔽部材の外側で
行った比較例１では、引き上げ歩留りは本発明の実施例
と同程度であったが、育成結晶の比抵抗は、３００ｇの
アンチモン使用では約０．０１５５Ω・ｃｍまでしか低
下しなかった。これは、使用されたアンチモンの多くが
融液に投入されるまでの間に蒸発し、融液のドープ剤濃
度上昇に有効に寄与しなかったことを意味する。On the other hand, in the comparative example 1 in which antimony was charged into the silicon melt in the crucible outside the heat shielding member, the yield was as high as that of the embodiment of the present invention. However, the specific resistance of the grown crystal was reduced only to about 0.0155 Ω · cm when 300 g of antimony was used. This means that most of the used antimony evaporated before being put into the melt, and did not effectively contribute to increasing the dopant concentration in the melt.
【００３７】ちなみに、本発明の実施例と同じ０．０１
４Ω・ｃｍレベルまで比抵抗を下げるためには約３６０
ｇのアンチモンが必要となり、その使用量は本発明の実
施例の１．２倍になる。Incidentally, the same as the embodiment of the present invention, 0.01
Approximately 360 to lower the specific resistance to 4Ωcm level
g of antimony is required, and the amount used is 1.2 times that of the embodiment of the present invention.
【００３８】一方、アンチモン投入を熱遮蔽部材の内側
で行った比較例２では、比抵抗、即ちアンチモンの必要
量は本発明の実施例と同じであった。しかし、引き上げ
初期に有転位化が多発し、全長引き上げが可能な操業は
全操業回数の２０％に過ぎなかった。これは、アンチモ
ンの投入に伴うハネが有転位化の原因につながったため
である。On the other hand, in Comparative Example 2 in which antimony was charged inside the heat shielding member, the specific resistance, that is, the required amount of antimony was the same as that of the example of the present invention. However, dislocations occurred frequently in the early stage of the lifting, and only 20% of the total number of operations could be increased. This is because the splash caused by the introduction of antimony led to the cause of dislocation.
【００３９】このように、本発明の実施例では、使用し
たドープ剤が有効に活用され、且つドープ剤の添加に伴
う有転位化が防止される。As described above, in the embodiment of the present invention, the used dopant is effectively used, and dislocation due to the addition of the dopant is prevented.
【００４０】なお、上述の例ではドープ剤としてアンチ
モンを使用したが、アンチモン以外の蒸発が顕著なドー
プ剤、例えば砒素（Ａｓ）等の添加にも本発明は有効で
ある。Although antimony is used as a dopant in the above-described example, the present invention is also effective for adding a dopant other than antimony, such as arsenic (As), which is remarkably evaporated.
【００４１】本発明でのドープ剤の投下経路、即ちドー
プ供給管の配設経路は、上述の例では熱遮蔽部材の下部
でドープ剤を熱遮蔽部材の内側から外側へ導出するもの
となっているが、ドープ剤の種類や雰囲気温度等によっ
ては熱遮蔽部材の中段部でこの導出を行ってもよく、更
には熱遮蔽部材の下方を迂回して投入を行うことも可能
である。In the above-mentioned embodiment, the doping route of the dopant, that is, the disposing route of the dope supply pipe in the present invention is such that the dopant is led from the inside of the heat shielding member to the outside at the lower portion of the heat shielding member. However, depending on the type of the doping agent, the ambient temperature, and the like, this extraction may be performed at the middle stage of the heat shielding member, and it is also possible to bypass the lower part of the heat shielding member and perform the introduction.
【００４２】[0042]
【発明の効果】以上の説明から明らかなように、本発明
の単結晶育成装置は、坩堝内に形成された原料融液にド
ープ剤を投入する際に、途中まで熱遮蔽部材の内側を通
すように構成されているので、投入途中におけるドープ
剤の蒸発を抑え、その使用量を低減することができる。
また、最終的には熱遮蔽部材の外側で原料融液への投入
を行うように構成されているので、その投入に伴う有転
位化を防止することができ、ドープ剤の節減と合わせ
て、単結晶の育成コストを大幅に低減することができ
る。As is apparent from the above description, the single crystal growing apparatus according to the present invention allows the dope to be introduced into the raw material melt formed in the crucible while passing through the inside of the heat shielding member halfway. With such a configuration, the evaporation of the dopant during the charging can be suppressed, and the amount of the dopant can be reduced.
In addition, since it is configured to be finally charged into the raw material melt outside the heat shielding member, dislocations accompanying the charging can be prevented, and together with the saving of the dopant, The cost of growing a single crystal can be greatly reduced.
【図１】本発明の実施形態に係る単結晶育成装置の縦断
面図である。FIG. 1 is a longitudinal sectional view of a single crystal growing apparatus according to an embodiment of the present invention.
【図２】本発明の効果を引き上げ歩留りにより示すグラ
フである。FIG. 2 is a graph showing the effect of the present invention by raising the yield.
【図３】本発明の効果を単結晶の比抵抗により示すグラ
フである。FIG. 3 is a graph showing the effect of the present invention based on the specific resistance of a single crystal.
【図４】従来の単結晶育成装置の縦断面図である。FIG. 4 is a longitudinal sectional view of a conventional single crystal growing apparatus.
【図５】比較例として挙げた単結晶育成装置の縦断面図
である。FIG. 5 is a longitudinal sectional view of a single crystal growing apparatus described as a comparative example.
【符号の説明】 １０ 育成装置本体 １１ メインチャンバー １２ 坩堝 １３ ペディスタル １４ ヒータ １５，１６ 断熱材 ２０ 熱遮蔽部材 ３０ ドープ供給管 ４０ シリコン融液（原料融液）[Description of Signs] 10 Growing apparatus main body 11 Main chamber 12 Crucible 13 Pedestal 14 Heater 15, 16 Heat insulating material 20 Heat shielding member 30 Dope supply pipe 40 Silicon melt (raw material melt)
フロントページの続き (72)発明者 田辺 博之 佐賀県杵島郡江北町大字上小田2201番地 住友シチックス株式会社内Continuing on the front page (72) Inventor Hiroyuki Tanabe 2201 Kamidada, Oita, Kihoku-gun, Kishima-gun, Saga Prefecture Sumitomo Sitix Corporation
Claims (1)
坩堝内に原料融液を形成し、その原料融液からＣＺ法に
よって単結晶を引き上げる育成装置本体と、ヒータ及び
原料融液からの輻射熱を遮蔽するために坩堝の上方に単
結晶を包囲するように配設された筒状の熱遮蔽部材と、
坩堝内の原料融液にドープ剤を添加するために熱遮蔽部
材の内側に配設され、且つ熱遮蔽部材の中段位置より下
方でドープ剤が熱遮蔽部材の外側へ導出されて坩堝内の
原料融液に投入されるように、少なくとも下端部を熱遮
蔽部材の外側に臨ませて配設されたドープ供給管とを具
備することを特徴とする単結晶育成装置。1. A raw material melt is formed in a crucible by a heater disposed outside the crucible, and a growth apparatus body for pulling a single crystal from the raw material melt by a CZ method, and radiant heat from the heater and the raw material melt. A tubular heat shield member arranged to surround the single crystal above the crucible to shield,
The dope is disposed inside the heat shielding member to add the dopant to the raw material melt in the crucible, and the dopant is led out of the heat shielding member below the middle position of the heat shielding member and the raw material in the crucible is removed. A dope supply pipe disposed so that at least the lower end thereof faces the outside of the heat shielding member so as to be charged into the melt, and a single crystal growing apparatus characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15165998A JP4075136B2 (en) | 1998-06-01 | 1998-06-01 | Single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15165998A JP4075136B2 (en) | 1998-06-01 | 1998-06-01 | Single crystal growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11343196A true JPH11343196A (en) | 1999-12-14 |
| JP4075136B2 JP4075136B2 (en) | 2008-04-16 |
Family
ID=15523418
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15165998A Expired - Lifetime JP4075136B2 (en) | 1998-06-01 | 1998-06-01 | Single crystal growth equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105369346A (en) * | 2015-12-09 | 2016-03-02 | 天津市环欧半导体材料技术有限公司 | Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals |
| DE112021005690T5 (en) | 2020-10-28 | 2023-08-10 | Sumco Corporation | DEVICE FOR THE PRODUCTION OF MONOCRYSTALS |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010125960A1 (en) | 2009-04-28 | 2010-11-04 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Method for converting program code of program running in multithreaded environment to program code having fewer lock conflicts, and computer program and computer system therefor |
-
1998
- 1998-06-01 JP JP15165998A patent/JP4075136B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105369346A (en) * | 2015-12-09 | 2016-03-02 | 天津市环欧半导体材料技术有限公司 | Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals |
| DE112021005690T5 (en) | 2020-10-28 | 2023-08-10 | Sumco Corporation | DEVICE FOR THE PRODUCTION OF MONOCRYSTALS |
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