JPH11340515A - Light-emitting device and display device using the same - Google Patents

Light-emitting device and display device using the same

Info

Publication number
JPH11340515A
JPH11340515A JP14187498A JP14187498A JPH11340515A JP H11340515 A JPH11340515 A JP H11340515A JP 14187498 A JP14187498 A JP 14187498A JP 14187498 A JP14187498 A JP 14187498A JP H11340515 A JPH11340515 A JP H11340515A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
package
led
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14187498A
Other languages
Japanese (ja)
Other versions
JP4536171B2 (en
Inventor
Kunihiro Izuno
訓宏 泉野
Yoshifumi Nagai
芳文 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP14187498A priority Critical patent/JP4536171B2/en
Publication of JPH11340515A publication Critical patent/JPH11340515A/en
Application granted granted Critical
Publication of JP4536171B2 publication Critical patent/JP4536171B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce unnecessary electromagnetic waves by providing a GND electrode that is electrically connected not only to a shield layer but also to a ground line arranged on the back or side surface of a package. SOLUTION: A GND electrode 102 is electrically connected to a ground line arranged on the back or side surface of a package 103 and to a shield layer 107, arranged on the front surface of the package 103 via a through-hole 108 or the like, so that currents and electromagnetic waves from outside such as static electricity, and further electromagnetic waves within, e.g. a drive circuit for driving a light-emitting device are prevented from being radiated to the outside. Furthermore, heat accompanied by irradiation with light from outside is prevented from connecting on the surface of the package 103 by allowing the heat to be released to the outside via the electrode 102 from the layer 107. As a result, various malfunctions of electronic equipment due to the electromagnetic waves from outside or electromagnetic waves within the internal drive circuit can be prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はＬＥＤチップをパッ
ケージの内部に配置させた発光装置に係わり、特に、静
電気による損傷、ＥＭＩ(electromagnetic interferenc
e)及び光照射による損傷が少なく極めて信頼性の高い発
光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device in which an LED chip is disposed inside a package, and more particularly, to damage caused by static electricity, EMI (electromagnetic interference).
e) and a highly reliable light-emitting device with little damage due to light irradiation.

【０００２】[0002]

【従来技術】今日、光の三原色に相当するＲＧＢ（赤
色、緑色、青色）の光が１０００ｍｃｄ以上にも及ぶ超
高輝度に発光可能なＬＥＤがそれぞれ開発された。この
ようなＬＥＤを用いた発光装置は半導体素子であるため
小型、軽量で信頼性が高く、かつ低消費電力である。そ
のため、バックライト、プリンタヘッドやＬＥＤディス
プレイなど種々の分野にパッケージ内部にＬＥＤを配置
させた発光装置が利用され始めている。2. Description of the Related Art Recently, LEDs capable of emitting light of RGB (red, green, blue) corresponding to the three primary colors of light with an ultra-high luminance of over 1000 mcd have been developed. Since a light emitting device using such an LED is a semiconductor element, it is small, lightweight, highly reliable, and consumes low power. For this reason, light-emitting devices having LEDs arranged inside packages have begun to be used in various fields such as backlights, printer heads and LED displays.

【０００３】図５にＬＥＤを用いた発光装置５００を利
用した例としてＬＥＤディスプレイ５１０の模式的斜視
図を示す。ＬＥＤディスプレイ５１０は複数の発光装置
５００をドットマトリックス状などに配置させ各発光装
置の点灯を制御することにより種々の情報を表示するこ
とができる。ＬＥＤディスプレイ５１０を複数接続させ
ることにより所望の大きさの画像データなどを表示させ
ることができる。具体的には、各種コンピュータ、ＶＴ
ＲやＤＶＤなど種々の情報源から表示データを転送し表
示データを各々の駆動データとして演算処理する。演算
処理されたデータに基づいて駆動回路を構成するドライ
バーをスイッチングさせる。各発光装置を所望時間点灯
させることにより、所望の画像データなどを表示するこ
とができる。これら駆動回路は、発光装置５００が配置
された発光装置配置用基板５０１に形成させても良い
し、スペースなどの都合から発光装置配置用基板５０１
の発光観測面に対して裏面側に駆動回路を配置した駆動
基板５０２を構成させても良い。発光装置配置用基板５
０１と駆動基板５０２とはピン５０５を用いて電気的に
接続させている。FIG. 5 is a schematic perspective view of an LED display 510 as an example using a light emitting device 500 using LEDs. The LED display 510 can display various information by arranging a plurality of light emitting devices 500 in a dot matrix or the like and controlling lighting of each light emitting device. By connecting a plurality of LED displays 510, image data of a desired size can be displayed. Specifically, various computers, VT
Display data is transferred from various information sources such as R and DVD, and the display data is processed as respective drive data. The driver constituting the drive circuit is switched based on the data subjected to the arithmetic processing. By lighting each light emitting device for a desired time, desired image data and the like can be displayed. These drive circuits may be formed on the light emitting device arrangement substrate 501 on which the light emitting device 500 is arranged, or the light emitting device arrangement substrate 501 may be formed for convenience of space.
A drive substrate 502 having a drive circuit disposed on the back side with respect to the light emission observation surface may be configured. Light Emitting Device Arrangement Substrate 5
01 and the drive substrate 502 are electrically connected using pins 505.

【０００４】ＬＥＤディスプレイ５１０は野外だけでな
く屋内にも配置される。特にディスプレイの大きさや設
置場所に応じて最近では比較的高い位置だけでなく人の
触れる位置にまで配置されることがある。発光装置５０
０は黒色に着色した液晶ポリマーなどからなるパッケー
ジの凹部内に外部電極と電気的に接続させたＬＥＤチッ
プを配置させる。また、パッケージの凹部を透光性エポ
キシ樹脂などで被覆して保護している。これにより発光
装置の表面に人などが当たったとしても内部に配置され
たＬＥＤチップなどが機械的に破壊されないように構成
させている。[0004] The LED display 510 is arranged not only outdoors but also indoors. Particularly, depending on the size of the display and the installation place, recently, the display may be arranged not only at a relatively high position but also at a position where a person can touch. Light emitting device 50
Reference numeral 0 indicates that an LED chip electrically connected to an external electrode is arranged in a concave portion of a package made of a liquid crystal polymer colored black. Also, the concave portion of the package is protected by covering with a translucent epoxy resin or the like. With this configuration, even if a person or the like hits the surface of the light emitting device, the LED chip and the like disposed inside are not mechanically destroyed.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、ＬＥＤ
ディスプレイ５１０に触れることにより、発光装置配置
用基板５０１上に配置された発光装置５００が絶縁層で
被覆されていたとしても内部の発光素子が破壊される場
合がある。したがって、上記構成の発光装置においては
十分ではなく更なる改良が求められている。SUMMARY OF THE INVENTION However, LEDs
By touching the display 510, even if the light emitting device 500 arranged on the light emitting device arrangement substrate 501 is covered with the insulating layer, the light emitting element inside may be broken. Therefore, the light emitting device having the above configuration is not sufficient, and further improvement is required.

【０００６】本発明者らは種々の実験の結果、発光装置
の破壊は発光装置に触れることにより人体等に帯電した
高電圧が一気に放電されること及び発光装置に設けられ
た表面のシールド層により発光素子に損傷を与えること
なく電流をパスさせることができることを見出し本発明
を成すに至った。As a result of various experiments, the inventors of the present invention have found that the destruction of the light emitting device is caused by the fact that a high voltage charged on the human body or the like is discharged at a stroke by touching the light emitting device, and the shield layer on the surface provided in the light emitting device. The present inventors have found that a current can be passed without damaging a light emitting element, and have accomplished the present invention.

【０００７】即ち、ＬＥＤディスプレイは発光装置の配
置数などによって種々の大きさとすることができる。人
の直前に配置させ手に触れる場所に配置することもでき
る。特に、設置スペースが制限された屋内用とすること
もできる。この場合、冬季など乾燥した雰囲気中などで
は静電気が生じやすい。したがって、屋内用などＬＥＤ
ディスプレイに触れる或いは、近づくだけで人体等から
ＬＥＤディスプレイに放電する場合がある。チップタイ
プ型ＬＥＤなどの発光装置は、発光装置の表面から発光
装置配置用基板との間隔が短く（発光装置の厚みが薄
く）、発光装置が配置される基板の導電性パターンとの
接続箇所に放電が集中することも考えられる。導電性パ
ターンへの放電は配置されているＬＥＤチップに局所的
に電流が流れることによりＬＥＤチップが静電破壊され
ると考えられる。特に、窒化物半導体を用いたＬＥＤチ
ップは静電破壊されやすい傾向にある。また、発光層を
単一量子井戸構造や多重量井戸構造など量子効果が生ず
るといわれる膜厚とすると、さらに破壊されやすい傾向
にある。[0007] That is, the LED display can have various sizes depending on the number of light emitting devices arranged. It can also be placed just before a person and in a place where it can be touched. In particular, it can be used indoors where the installation space is limited. In this case, static electricity is easily generated in a dry atmosphere such as in winter. Therefore, LED for indoor use
There is a case where a human body or the like discharges to the LED display by touching or approaching the display. Light-emitting devices such as chip-type LEDs have a short distance from the surface of the light-emitting device to the light-emitting device placement substrate (thinness of the light-emitting device is thin), and the light-emitting device is disposed at a connection position with the conductive pattern on the substrate on which the light-emitting device is placed. It is also conceivable that the discharge is concentrated. It is considered that the discharge to the conductive pattern causes the LED chip to be electrostatically destroyed due to a local current flowing through the LED chip. In particular, an LED chip using a nitride semiconductor tends to be easily damaged by electrostatic discharge. Further, when the light emitting layer has a thickness such as a single quantum well structure or a multi-well structure, which is said to have a quantum effect, the light emitting layer tends to be more easily broken.

【０００８】また、ＬＥＤディスプレイにおいては、１
秒間に６０フレーム近くの画像が走査される。また、マ
ルチカラーやフルカラー表示の場合、色の三原色に対応
するＲＧＢの発光装置を駆動させなければならない。そ
のため、大型のディスプレイにおいては数万から数十万
の各ＬＥＤチップをスイッチングして駆動させる。その
ため、発光装置の数を増やし大型化するに伴って導波周
波数が高くなる。ＬＥＤチップの駆動に伴って駆動回路
を構成する集積回路や配線などから高周波が放射される
場合がある。In an LED display, 1
Nearly 60 frames of the image are scanned per second. In the case of multi-color or full-color display, it is necessary to drive the RGB light emitting devices corresponding to the three primary colors. Therefore, in a large display, tens of thousands to hundreds of thousands of LED chips are switched and driven. Therefore, as the number of light emitting devices increases and the size of the light emitting devices increases, the waveguide frequency increases. In some cases, a high frequency is radiated from an integrated circuit, wiring, or the like that forms a driving circuit in association with driving of the LED chip.

【０００９】高周波はＬＥＤディスプレイにとって不要
であり、発光装置の誤作動だけでなく、ＬＥＤディスプ
レイから放出され他の機器に進入することにより誤作動
等を生じさせることが考えられる。屋内などより密閉し
た空間において電子機器の多数が配置される環境以下に
おいては電磁波による不具合としてＥＭＩ対策が極めて
重要になってくる。本発明のシールド層はこのような不
要な電磁波を低減させることもできる。The high frequency is unnecessary for the LED display, and it is conceivable that not only the malfunction of the light emitting device but also the malfunction of the light emitting device caused by the emission from the LED display and entry into other devices is caused. In an environment where a large number of electronic devices are arranged in a closed space such as an indoor space, EMI countermeasures become extremely important as a problem due to electromagnetic waves. The shield layer of the present invention can also reduce such unnecessary electromagnetic waves.

【００１０】[0010]

【課題を解決するための手段】本発明の発光装置は絶縁
性を有するパッケージの凹部内に配置されたＬＥＤと、
ＬＥＤと接続されパッケージ凹部内と外部とを電気的に
接続される外部電極と、パッケージの凹部周辺の表面上
に設けられたシールド層と、シールド層と電気的に接続
されると共に少なくともパッケージ裏面或いは側面に設
けられた接地線に接続用のＧＮＤ電極とを有する。これ
により、人などが触れる発光装置においてもＬＥＤチッ
プの破壊等がない発光装置とすることができる。また、
外部からの電磁波による画像の乱れや内部駆動回路から
の電磁波を外部に放出することがない発光装置とするこ
とができる。According to the present invention, there is provided a light emitting device comprising: an LED disposed in a concave portion of an insulating package;
An external electrode that is connected to the LED and electrically connects the inside of the package recess and the outside; a shield layer provided on the surface around the recess of the package; A ground wire provided on the side surface has a connection GND electrode. This makes it possible to provide a light-emitting device that does not break the LED chip or the like even in a light-emitting device touched by a person or the like. Also,
It is possible to provide a light emitting device that does not disturb the image due to the electromagnetic wave from the outside and does not emit the electromagnetic wave from the internal driving circuit to the outside.

【００１１】請求項２に記載の発光装置はシールド層上
に光吸収層を有する。これにより外来光を受けてもコン
トラスト比の高い発光装置とすることもできる。[0011] The light emitting device according to claim 2 has a light absorbing layer on the shield layer. Thus, a light-emitting device having a high contrast ratio even when receiving external light can be obtained.

【００１２】請求項３に記載の発光装置は、シールド層
はパッケージに対して熱伝導性の高いが金属或いは合金
であると共に前記パッケージの主材料が硝子エポキシ樹
脂であるシールド層が金属であると共にパッケージが硝
子エポキシ樹脂である。これにより、光照射によって半
田付け等する場合における硝子エポキシ樹脂の剥離など
に起因する発光装置の損傷を低減させることができる。
特に光吸収層が設けられた表面側は特に温度上昇が著し
くなるため本発明の効果が顕著に現れることとなる。According to a third aspect of the present invention, in the light emitting device, the shield layer is a metal or an alloy having high thermal conductivity to the package, and the main material of the package is a glass epoxy resin, and the shield layer is a metal. The package is a glass epoxy resin. This can reduce damage to the light emitting device due to peeling of the glass epoxy resin or the like when soldering or the like by light irradiation.
In particular, the temperature of the surface on which the light-absorbing layer is provided significantly increases, so that the effects of the present invention are remarkably exhibited.

【００１３】請求項４に記載の発光装置はＧＮＤ電極に
接続されるシールド層はＬＥＤと電気的に接続される外
部電極と電気的に独立している。これにより、信頼性の
より高い発光装置とすることができる。In the light emitting device according to the fourth aspect, the shield layer connected to the GND electrode is electrically independent of the external electrode electrically connected to the LED. Thus, a light emitting device with higher reliability can be obtained.

【００１４】請求項５に記載の発光装置はＬＥＤが窒化
物半導体からなる。特に静電気などに対して弱い窒化物
半導体を利用した場合においても、信頼性のより高い発
光装置とすることができる。In the light emitting device according to the fifth aspect, the LED is made of a nitride semiconductor. In particular, even when a nitride semiconductor which is weak against static electricity or the like is used, a highly reliable light emitting device can be provided.

【００１５】請求項６に記載のＬＥＤ表示装置は、絶縁
性を有するパッケージの凹部内に配置されたＬＥＤと、
ＬＥＤと接続されパッケージ凹部内と外部とを電気的に
接続される外部電極と、パッケージの凹部周辺の表面上
に設けられたシールド層と電気的に接続されると共に接
地線に接続用のＧＮＤ電極が設けられた発光装置を複数
配置する発光装置配置用基板と、発光装置配置用基板の
発光観測面に対して裏面側に発光装置を各々駆動させる
駆動回路が配置された駆動基板とを有し、前記発光装置
配置用基板及び駆動基板は多層基板であると共に各基板
中に表面シールド層と電気的に接続されたＧＮＤ層を有
する。これにより比較的簡単な構成で静電気による損傷
やＥＭＩ対策、さらにはリペア時の損傷を防止しうるこ
とができる。According to a sixth aspect of the present invention, there is provided an LED display device comprising: an LED disposed in a concave portion of an insulating package;
An external electrode that is connected to the LED and electrically connects the inside and the outside of the package concave portion; and a GND electrode that is electrically connected to a shield layer provided on a surface around the concave portion of the package and is connected to a ground line. A light emitting device disposing substrate for disposing a plurality of light emitting devices provided with a light emitting device, and a driving substrate on which a driving circuit for driving each light emitting device is disposed on the back side with respect to the light emission observing surface of the light emitting device disposing substrate. The light emitting device arrangement substrate and the driving substrate are multilayer substrates and each substrate has a GND layer electrically connected to a surface shield layer. This makes it possible to prevent damage due to static electricity and EMI as well as damage during repair with a relatively simple configuration.

【００１６】[0016]

【発明の実施の形態】以下、本発明の一例を図３及び図
４に示す。基板上に図３の如きＲＧＢがそれぞれ発光可
能なＬＥＤチップ３０５を内部に有する発光装置３００
を配置させた。半田４０８により基板４０１上の導電パ
ターンの電極と、発光装置３００の各電極とを電気的に
接続させると共に固定させる。基板上には発光装置が１
６×１６のドットマトリックス状に配置させてある。次
に、発光装置３００が形成された発光装置配置用基板４
０１の裏面側に、この基板と各発光装置を駆動させる駆
動ドライバとしてＣＰＵなどを配置させてた駆動基板４
０２とをピン４０５を用いて図４の如き電気的に接続さ
せてある。FIG. 3 and FIG. 4 show an example of the present invention. A light emitting device 300 having an LED chip 305 capable of emitting each of RGB as shown in FIG.
Was placed. The electrodes of the conductive pattern on the substrate 401 and the respective electrodes of the light emitting device 300 are electrically connected and fixed by the solder 408. One light emitting device on the substrate
They are arranged in a 6 × 16 dot matrix. Next, the light emitting device arrangement substrate 4 on which the light emitting device 300 is formed
01, a drive board 4 on which a CPU and the like are arranged as a drive driver for driving this board and each light emitting device.
02 is electrically connected using pins 405 as shown in FIG.

【００１７】発光装置３００のパッケージ３０３は、ア
ルミナを主原料とするセラミック焼成前のグリーンシー
トを利用してある。グリーンシートを多層に積層させる
と共に焼成後に発光装置３００内の導電性パターンとし
て働く金属層をタングステン含有の樹脂を所望のパター
ンに印刷させることにより形成させる。ＬＥＤチップが
配置されるパッケージ３０３の開口部は、予め穴のあい
たグリーンシートをタングステンで導電性パターンが形
成されたグリーンシート上に積層させることにより形成
させる。The package 303 of the light emitting device 300 uses a green sheet of alumina as a main material before ceramic firing. A metal layer serving as a conductive pattern in the light emitting device 300 after the green sheets are stacked in multiple layers and fired is formed by printing a resin containing tungsten in a desired pattern. The opening of the package 303 in which the LED chips are arranged is formed by laminating a green sheet having holes in advance on a green sheet on which a conductive pattern is formed with tungsten.

【００１８】本発明ではグリーンシートの最表面側に、
後でシールド層３０１として働く酸化ルテニウムを樹脂
と共に塗布する。グリーンシートを焼成するとセラミッ
クは白色となるが、酸化ルテニウムは暗色系となる。ま
た、表面に印刷させた酸化ルテニウムはグリーンシート
の状態で裏面側と貫通孔３０８を利用して電気的に接続
させてある。裏面側では、ＬＥＤチップと電気的に接続
させ固定させるための電極の他に、表面の酸化ルテニウ
ムと接続された電極３０２が設けられている。In the present invention, on the outermost surface side of the green sheet,
Ruthenium oxide serving as the shield layer 301 is applied later together with the resin. When the green sheet is fired, the ceramic becomes white, but ruthenium oxide becomes dark. Further, the ruthenium oxide printed on the front surface is electrically connected to the back surface side in the state of a green sheet using the through holes 308. On the rear surface side, an electrode 302 connected to ruthenium oxide on the front surface is provided in addition to an electrode for electrically connecting and fixing the LED chip.

【００１９】こうして積層したグリーンシートを炉によ
り焼成させると、内部に開口部を有し開口部底面から裏
面に電気的に接続された種々の電極３０２、３０６が形
成されることとなる。焼成により形成されたセラミック
パッケージ３０３の開口部周辺に設けられた表面層は、
シールド層兼光吸収層３０１として働き発光装置のコン
トラスト比を向上させることができる。When the green sheets thus laminated are fired in a furnace, various electrodes 302 and 306 having an opening therein and electrically connected from the bottom surface of the opening to the back surface are formed. The surface layer provided around the opening of the ceramic package 303 formed by firing is:
The light-emitting device can serve as a shield layer and a light-absorbing layer 301 to improve the contrast ratio of the light-emitting device.

【００２０】また、酸化ルテニウムが形成されたシール
ド層はＬＥＤチップを駆動させる電極とは独立に裏面側
において電極３０２、３０６が形成されている。このた
め、シールド層３０１の表面側から静電気など大電圧が
掛かったとしてもＬＥＤチップとは独立した電極を介し
て接地線（ground）に電流が放出されることとなる。特
に、発光装置の最表面側にシールド層３０１があること
から優先的に電流が流れ内部に配置されたＬＥＤチップ
を損傷することが極めて少なくなる。In the shield layer on which ruthenium oxide is formed, electrodes 302 and 306 are formed on the back side independently of the electrodes for driving the LED chip. Therefore, even if a large voltage such as static electricity is applied from the surface side of the shield layer 301, a current is discharged to the ground line (ground) via an electrode independent of the LED chip. In particular, since the shield layer 301 is provided on the outermost surface side of the light emitting device, current flows preferentially and damage to the LED chip disposed inside is extremely reduced.

【００２１】開口部内部に、Ｂ（青色系）が発光可能な
ＬＥＤチップ３０５としてサファイア基板上に低温で成
膜させたＧａＮのバッファ層、ｎ型ＧａＮであるコンタ
クト層兼クラッド層、ＧａＮ層とＩｎＧａＮ層の多重量
子井戸構造とされる活性層、ｐ型ＡｌＧａＮであるクラ
ッド層、ｐ型ＧａＮであるコンタクト層を積層した構成
としてある。各コンタクト層を露出させ電極を形成させ
た後、ダイボンド機器を用いて形成されたＬＥＤチップ
をエポキシ樹脂であるマウント部材によりパッケージの
開口部内に配置させる。マウント部材を硬化後、ＬＥＤ
チップの各電極と、開口部内に露出したパッケージ表面
上の電極とを金線を用いてワイヤボンディングさせる。
この後、パッケージの開口部内にエポキシ樹脂を透光性
モールド部材３０４として充填しＬＥＤ及びワイヤを外
力、塵芥や水分などから保護する。Inside the opening, a GaN buffer layer formed at a low temperature on a sapphire substrate as an LED chip 305 capable of emitting B (blue) light, a contact layer / cladding layer of n-type GaN, and a GaN layer The active layer has a multiple quantum well structure of an InGaN layer, a cladding layer of p-type AlGaN, and a contact layer of p-type GaN. After exposing each contact layer to form an electrode, the LED chip formed by using a die bonding device is arranged in the opening of the package by a mount member made of epoxy resin. After curing the mounting member, LED
Each electrode of the chip and the electrode on the package surface exposed in the opening are wire-bonded using a gold wire.
Thereafter, an epoxy resin is filled into the opening of the package as a light-transmitting mold member 304 to protect the LED and the wire from external force, dust, moisture, and the like.

【００２２】セラミックパッケージ３０３の裏面側に設
けられた外部電極３０６に電流を供給することによりＬ
ＥＤチップ３０５を発光させることができる。また、シ
ールド層３０１とパッケージ３０３の貫通孔３０８を通
して裏面側に設けられたＧＮＤ電極３０２は、ＬＥＤチ
ップ３０５と電気的に接続される外部電極３０６とは別
に電気的に独立して接地線に専用に接続される。以下、
本発明の各構成について詳述する。By supplying a current to an external electrode 306 provided on the back side of the ceramic package 303,
The ED chip 305 can emit light. In addition, the GND electrode 302 provided on the back surface side through the shield layer 301 and the through hole 308 of the package 303 is dedicated to the ground line independently of the external electrode 306 electrically connected to the LED chip 305. Connected to. Less than,
Each configuration of the present invention will be described in detail.

【００２３】（シールド層１０１、３０１）シールド層
１０１はパッケージ１０３の発光観測面側表面に設けら
れるものであり、外部からの静電気など不要な電流をＬ
ＥＤチップ１０５に損傷を与えることなく放出させるこ
とができるものである。或いは、ＬＥＤチップ１０５を
発光／非発光を制御させることなどに伴う駆動回路から
の電磁波を吸収することもできる。さらに、パッケージ
表面に照射された光により生ずる熱を効率よく外部に放
出することが好適にできるものである。したがって、電
気伝導性、熱伝導性の高いことものが好ましい。シール
ド層１０１の材料としては、パッケージ１０３の主部材
によって種々のものを選択することができるが、具体的
には銅、金、銀などの各種金属膜、パラジウム、タング
ステンなどの高融点金属やこれらの金属酸化物、各種金
属リードなどを好適に利用することができる。(Shield Layers 101 and 301) The shield layer 101 is provided on the surface of the package 103 on the light emission observing surface side.
The ED chip 105 can be released without damaging it. Alternatively, it is also possible to absorb an electromagnetic wave from a driving circuit accompanying the control of light emission / non-light emission of the LED chip 105. Further, the heat generated by the light applied to the package surface can be efficiently released to the outside efficiently. Therefore, those having high electric conductivity and high heat conductivity are preferable. Various materials can be selected as the material of the shield layer 101 depending on the main member of the package 103. Specifically, various metal films such as copper, gold, and silver; Metal oxides, various metal leads and the like can be suitably used.

【００２４】（光吸収層１０７）光吸収層１０７はシー
ルド層１０１上に好適に用いられるものである。シール
ド層１０１は電気的伝導性の良いものが用いられるた
め、種々の金属などが利用することができる。この場
合、金属光沢を持ったものは外来光を反射するため発光
装置のコントラスト比が低下する傾向にある。そのた
め、暗色系の塗料などを少なくとも発光装置１００の非
発光部であるパッケージ１０３の表面側に光吸収層１０
７として形成させる。光吸収層１０７により発光装置１
００の発光／非発光時におけるコントラスト比を向上さ
せることができる。光吸収層１０７が絶縁性である場合
は、外部からの静電気などを効率よく通電することがで
きない。電流はＬＥＤチップなどが駆動用の電極を介し
て流れ、破壊されやすくなる。そのため光吸収層１０７
自体も導電性が高いことが好ましい。光吸収層１０７と
して具体的には、酸化銀や酸化鉄などの金属酸化物、カ
ーボンや黒や紺色など暗色系の着色染料を含有させた各
種導電性ペーストなどが好適に挙げられる。光吸収層１
０７の導電性がよい場合はシールド層１０１と光吸収層
１０７を兼用することもできる。(Light Absorbing Layer 107) The light absorbing layer 107 is preferably used on the shield layer 101. Since a material having good electric conductivity is used for the shield layer 101, various metals and the like can be used. In this case, since a material having metallic luster reflects extraneous light, the contrast ratio of the light emitting device tends to decrease. Therefore, at least the light absorbing layer 10 is coated on the surface of the package 103 which is a non-light emitting portion of the light emitting device 100 with a dark color paint or the like.
7 is formed. Light emitting device 1 by light absorbing layer 107
The contrast ratio at the time of light emission / non-light emission of 00 can be improved. When the light absorption layer 107 is insulative, external static electricity or the like cannot be efficiently supplied. An electric current flows through a driving electrode of an LED chip or the like, and the LED chip is easily broken. Therefore, the light absorbing layer 107
It is also preferable that the conductivity itself is high. As the light absorbing layer 107, specifically, a metal oxide such as silver oxide or iron oxide, various conductive pastes containing carbon, or a dark coloring dye such as black or dark blue are preferably used. Light absorbing layer 1
In the case where the electrical conductivity of the layer 07 is good, the shield layer 101 and the light absorbing layer 107 can be used together.

【００２５】（ＧＮＤ電極１０２、３０２）ＧＮＤ電極
１０２は、パッケージ１０３裏面や側面に設けられ接地
線などと接続されるものである。ＧＮＤ電極１０３はパ
ッケージ１０３の表面側に設けられたシールド層１０７
とスルーホール１０８などを介して電気的に接続され静
電気など外部からの電流、電磁波さらには発光装置を駆
動させる駆動回路等からの電磁波を外部に放射するのを
防ぐことができる。また、外部の光照射に伴う熱をパッ
ケージ１０３表面に留めることなくシールド層１０７か
らＧＮＤ電極１０２を介して外部放出させることもでき
る。(GND Electrodes 102, 302) The GND electrodes 102 are provided on the back and side surfaces of the package 103 and are connected to a ground line or the like. The GND electrode 103 is a shield layer 107 provided on the surface side of the package 103.
And through a through-hole 108 or the like, it is possible to prevent external current such as static electricity, electromagnetic waves, and electromagnetic waves from a driving circuit or the like for driving the light emitting device from being radiated to the outside. Further, heat accompanying external light irradiation can be released from the shield layer 107 to the outside via the GND electrode 102 without remaining on the surface of the package 103.

【００２６】ＧＮＤ電極１０２はＬＥＤチップ１０５を
駆動させるための外部電極１０６と共通に用いることも
できるし、電気的に独立して利用することもできる。外
部からの静電気等をＬＥＤチップ１０５に損傷を与える
ことなく流すためには外部電極１０６と電気的に独立し
て配置させることが好ましい。ＧＮＤ電極１０２とシー
ルド層１０１とはパッケージ１０３に設けた孔に導電性
部材を形成させたスルーホール１０８やパッケージ外部
に設けた配線を利用して導通を取ることができる。ＧＮ
Ｄ電極１０２の具体的材料としては、硝子エポキシを用
いたパッケージの孔に設けられた銅箔やセラミックを用
いたパッケージに形成されるタングステンなどが好適に
挙げあれる。The GND electrode 102 can be used in common with the external electrode 106 for driving the LED chip 105, or can be used electrically independently. In order to allow external static electricity or the like to flow without damaging the LED chip 105, it is preferable to arrange the LED chip 105 electrically independent of the external electrode 106. The GND electrode 102 and the shield layer 101 can be electrically connected to each other by using a through hole 108 in which a conductive member is formed in a hole provided in the package 103 or a wiring provided outside the package. GN
Preferable examples of the material of the D electrode 102 include a copper foil provided in a hole of a package using glass epoxy, and tungsten formed in a package using ceramic.

【００２７】（パッケージ１０３）本発明に用いられる
パッケージ１０３は、内部に発光素子としてＬＥＤチッ
プ１０５が配置されるものであり外部環境の外力等から
ＬＥＤチップ１０５などを保護するためのものである。
パッケージ１３内には種々のＬＥＤチップ１０５を配置
させることができ、ＬＥＤチップの数も所望に応じて複
数配置させることができる。パッケージ１０３は凹部が
形成されており、凹部底面にはＬＥＤチップの各電極と
電気的に接続可能な配線が露出してある。また、パッケ
ージ１０３に露出したこの配線はパッケージ１０３の裏
面側の電極と電気的に接続されており外部電極として機
能する。ＬＥＤチップ１０５の損傷を少なくするために
パッケージ１０３開口部内に透光性樹脂１０６を封入す
ることもできる。このようなパッケージ１０３は外力に
強く耐光性が高いものとしてアクリル樹脂や液晶ポリマ
ーを用いたもの、硝子エポキシ樹脂を用いたもの、セラ
ミック材料を利用したものなど種々のものを好適に利用
することができる。(Package 103) The package 103 used in the present invention has an LED chip 105 disposed therein as a light emitting element, and protects the LED chip 105 and the like from external force of an external environment.
Various LED chips 105 can be arranged in the package 13, and a plurality of LED chips can be arranged as desired. A recess is formed in the package 103, and a wiring that can be electrically connected to each electrode of the LED chip is exposed at the bottom of the recess. The wiring exposed on the package 103 is electrically connected to an electrode on the back side of the package 103 and functions as an external electrode. In order to reduce damage to the LED chip 105, a translucent resin 106 may be sealed in the opening of the package 103. As such a package 103, various ones such as one using an acrylic resin or a liquid crystal polymer, one using a glass epoxy resin, one using a ceramic material, and the like, which are strong against external force and high in light resistance, can be suitably used. it can.

【００２８】（ＬＥＤ１０５、３０５）ＬＥＤ１０５、
３０５は半導体発光素子として種々のものを利用するこ
とができる。具体的には、ＲＧＢ（赤色、緑色、青色）
が単色性発光可能なＬＥＤだけでなく、Ｙ（黄色）が発
光可能なＬＥＤ等も挙げあれる。また、ＬＥＤ１０５か
ら放出された発光波長を種々の蛍光物質を利用すること
により色変換させて発光させるＬＥＤを利用することも
できる。このような、ＬＥＤとして具体的には発光層に
ＩｎＮ、ＧａＮ、ＡｌＮ、ＧａＰ、ＩｎＧａＮ、ＡｌＩ
ｎＮ、ＡｌＧａＮ、ＩｎＡｌＧａＮ、ＧａＡｌＡｓ、Ｇ
ａＡｓＰやＡｌＩｎＧａＰなど種々の材料を用いたもの
が挙げられる。また、発光層はＭＯＣＶＤ法、ＭＢＥ法
及びＣＶＤ法など種々のものを用いたものが挙げられ
る。ＬＥＤの構造もＭＩＳ接合、ＰＩＮ接合、ｐｎ接合
を用いたホモ構造、ヘテロ構造やダブルへテロ構造など
種々選択することができる。また、単一量子井戸構造や
多重量子井戸構造とすることもできる。(LED105, 305) LED105,
Various devices 305 can be used as the semiconductor light emitting device. Specifically, RGB (red, green, blue)
Are not only LEDs capable of emitting monochromatic light, but also LEDs capable of emitting Y (yellow). Further, an LED that emits light by converting the emission wavelength emitted from the LED 105 by using various fluorescent substances and emitting light can also be used. Specifically, as the LED, InN, GaN, AlN, GaP, InGaN, AlI
nN, AlGaN, InAlGaN, GaAlAs, G
A material using various materials such as aAsP and AlInGaP can be used. Further, as the light emitting layer, those using various materials such as MOCVD method, MBE method and CVD method can be used. The structure of the LED can be variously selected from a homostructure using a MIS junction, a PIN junction, and a pn junction, a heterostructure, and a double heterostructure. Further, a single quantum well structure or a multiple quantum well structure can be employed.

【００２９】（外部電極１０６、３０６）外部電極１０
６はパッケージ１０３内部に配置させたＬＥＤチップ１
０５と接続させると共に不示図の外部電源と接続させる
ために設けられる。したがって、パッケージ１０３裏面
側や側面側などに形成することができるものであるか
ら、パッケージ１０３を構成する主部材との密着性が高
く導電性がよいことが望まれる。外部電極１０６を構成
する材料は、パッケージの主部材によって種々のものを
選択することができるが、硝子エポキシ樹脂をパッケー
ジの主部材に利用した場合は銅箔、セラミックをパッケ
ージの主部材に利用した場合は、タングステンなどの高
融点金属、液晶ポリマーなどの耐熱性樹脂をパッケージ
の主部材に利用した場合は銀メッキなど施した鉄などの
金属リードなどを好適に利用することができる。(External electrodes 106 and 306) External electrode 10
6 is an LED chip 1 arranged inside the package 103
05 and an external power supply (not shown). Therefore, since it can be formed on the back surface side or side surface side of the package 103, it is desired that the adhesion to the main member constituting the package 103 is high and the conductivity is good. Various materials can be selected for the material forming the external electrode 106 depending on the main member of the package. However, when glass epoxy resin is used for the main member of the package, copper foil or ceramic is used for the main member of the package. In this case, when a high-melting point metal such as tungsten or a heat-resistant resin such as a liquid crystal polymer is used for the main member of the package, a metal lead such as silver-plated iron can be suitably used.

【００３０】（発光装置配置用基板４０１）発光装置配
置用基板４０１は本発明の発光装置３００を配置させる
基板である。ＬＥＤユニットなどとして利用させる場合
はドットマトリックス状など所望の数及び配置とさせる
ことができるものである。本発明においては、発光装置
３００がＬＥＤチップの駆動用とは別に独立したＧＮＤ
電極を持つ場合がある。この場合、発光装置配置用基板
４０１自体にもＬＥＤチップに電力を供給させる導電性
パターンとは別に接地線と接続される接地専用の導電性
パターンを形成させていることが望ましい。このような
接地線用の導線性パターンは大電流が流れても損傷しが
たいようにＧＮＤ層４０４として形成させることが望ま
しい。(Light Emitting Device Arrangement Substrate 401) The light emitting device arrangement substrate 401 is a substrate on which the light emitting device 300 of the present invention is arranged. When used as an LED unit or the like, a desired number and arrangement such as a dot matrix shape can be used. In the present invention, the light emitting device 300 has a separate GND for driving the LED chip.
May have electrodes. In this case, it is desirable that the light emitting device arrangement substrate 401 itself is formed with a grounding-only conductive pattern connected to a ground line, separately from the conductive pattern for supplying power to the LED chip. Such a conductive pattern for the ground line is preferably formed as the GND layer 404 so that it is difficult to be damaged even when a large current flows.

【００３１】（駆動基板４０２）駆動基板４０２は発光
装置３００を所望に点灯等させるために好適に用いられ
るものである。駆動基板４０２はＣＰＵや各種メモリー
を利用して外部からの入力されたデータ等により各発光
装置の各ＬＥＤチップをどのくらい点灯させるかによっ
て所望の画像データを表示させることができる。具体的
には、外部からの影像データを演算したのち演算結果に
よりドライバーを駆動させる。ドライバーをスイッチン
グさせることによりＬＥＤチップに供給する電流を制御
する。流れる電流の時間や電流量を種々制御することに
よりそれぞれのＬＥＤチップを発光させることができ
る。各ＬＥＤチップが光の３原色であるＲＧＢ（赤色、
緑色、青色）である場合、それぞれの混色発光を利用す
ることによりフルカラー表示することができる。ＬＥＤ
ディスプレイにおいては発光装置がドットマトリックス
状に配置させた発光装置用基板の裏面側にほぼ同一の大
きさで形成させることができる。これを複数接続させる
ことにより所望の大きさのディスプレイを比較的簡単に
構成することができる。発光装置配置用基板と同様、駆
動回路にもＧＮＤ層４０６を形成させていることが好ま
しい。(Drive Substrate 402) The drive substrate 402 is suitably used for lighting the light emitting device 300 as desired. The drive substrate 402 can display desired image data by how much each LED chip of each light emitting device is turned on by data input from the outside using a CPU or various memories. Specifically, after calculating image data from the outside, the driver is driven based on the calculation result. The current supplied to the LED chip is controlled by switching the driver. Each LED chip can emit light by variously controlling the time and amount of current flowing. Each LED chip has three primary colors of light, RGB (red,
(Green, blue), full-color display can be achieved by utilizing the mixed color emission. LED
In a display, the light emitting devices can be formed in substantially the same size on the back surface side of the light emitting device substrate arranged in a dot matrix shape. By connecting a plurality of these, a display having a desired size can be relatively easily configured. It is preferable that the GND layer 406 be formed in the driver circuit as well as the light emitting device arrangement substrate.

【００３２】（ＧＮＤ層４０４、４０６）ＧＮＤ層４０
４、４０６は駆動基板４０２や発光装置配置用基板４０
１の内部に好適に形成することができるものである。多
層積層基板の内部に形成された導電性パターンを利用す
ることにより例えば１６×１６個の各発光装置のシール
ド層と、ＧＮＤ層４０４において一か所で接続させるこ
とができる。多層積層基板中のＧＮＤ層４０４はスルー
ホールを利用することにより各発光装置３００のシール
ド層と比較的簡単に接続させることができる。以下、本
発明の実施例について詳述する。(GND layers 404 and 406) GND layer 40
Reference numerals 4 and 406 denote a driving substrate 402 and a light emitting device arranging substrate 40.
1 can be suitably formed inside. By using the conductive pattern formed inside the multilayer laminated substrate, for example, 16 × 16 shield layers of each light emitting device can be connected at one place in the GND layer 404. The GND layer 404 in the multilayer laminated substrate can be relatively easily connected to the shield layer of each light emitting device 300 by using a through hole. Hereinafter, examples of the present invention will be described in detail.

【００３３】[0033]

【実施例】（実施例１）硝子エポキシ樹脂基板を利用し
て発光装置のパッケージを形成させた。パッケージは両
面に銅箔が所望のパターンに形成された硝子エポキシ樹
脂を２層張り合わせて形成させてある。発光観測面側と
なる表面側の硝子エポキシ樹脂はＬＥＤチップを配置さ
せる開口部をドットマトリクス状に１６×１６箇所開け
てある。また、開口部周辺の硝子エポキシ樹脂の最表面
には、開口部を除いて後に各発光装置の大きさとなる矩
形状全面に渡って厚さ２０μｍの銅箔が形成されてい
る。この銅箔がシールド層として働く。銅箔上にはコン
トラスト比を向上させるために光吸収層として暗色の酸
化鉄をエポキシ樹脂中に含有させたものを厚さ約３０μ
の薄膜状に塗布させてある。Example 1 A light emitting device package was formed using a glass epoxy resin substrate. The package is formed by bonding two layers of glass epoxy resin having copper foil formed in a desired pattern on both sides. The glass epoxy resin on the front side, which is the emission observation surface side, has 16 × 16 openings in the dot matrix form for disposing LED chips. Further, on the outermost surface of the glass epoxy resin around the opening, a copper foil having a thickness of 20 μm is formed over the entire rectangular surface which becomes the size of each light emitting device later excluding the opening. This copper foil functions as a shield layer. An epoxy resin containing dark iron oxide as a light absorbing layer to improve the contrast ratio on the copper foil has a thickness of about 30 μm.
In the form of a thin film.

【００３４】ＬＥＤチップが搭載される硝子エポキシ樹
脂は各開口部単位で開口部表面から裏面側に設けられた
外部電極（銅箔のパターン）までを接続させてある。具
体的には硝子エポキシ樹脂を利用したパッケージを貫通
した孔の表面に銅箔とその上に形成された金メッキから
なるスルーホールを介して電気的に接続させてある。同
様に、裏面側には外部電極の他にシールド層とスルーホ
ールを介して電気的に接続させたＧＮＤ電極を銅箔を利
用して形成させてある。なお、ＬＥＤチップが後に配置
される開口部ごとに矩形状に分離し各発光装置とすべく
硝子エポキシ樹脂の両面側から切り込みを入れてある。The glass epoxy resin on which the LED chip is mounted is connected from the opening surface to the external electrode (copper foil pattern) provided on the back surface side for each opening unit. Specifically, it is electrically connected to the surface of a hole penetrating a package using a glass epoxy resin via a copper foil and a through hole made of gold plating formed thereon. Similarly, a GND electrode electrically connected to a shield layer via a through hole in addition to the external electrode is formed on the rear surface side using a copper foil. It should be noted that the LED chips are separated into rectangular shapes for each of the openings to be disposed later, and cut out from both sides of the glass epoxy resin so as to form each light emitting device.

【００３５】ＩｎＧａＮを発光層とする厚さ３ｎｍの単
一量子井戸構造とされるＬＥＤチップを利用した。Ｉｎ
の組成を変えて青色（主発光波長４７０ｎｍ）と緑色
（主発光波長５５５ｎｍ）のＬＥＤチップを形成させて
ある。他方、赤色のＬＥＤチップとしてＡｌＧａＩｎＰ
を発光層に用いたものを利用してある。結晶性の良いＩ
ｎＧａＮを形成させるために窒化物半導体を利用したＬ
ＥＤチップは、サファイア基板上に形成させているため
サファイア上の窒化物半導体に一対の電極を形成させて
ある。An LED chip having a single quantum well structure with a thickness of 3 nm and a light emitting layer of InGaN was used. In
Are changed to form blue (main emission wavelength 470 nm) and green (main emission wavelength 555 nm) LED chips. On the other hand, AlGaInP is used as a red LED chip.
Is used for the light emitting layer. I with good crystallinity
L using nitride semiconductor to form nGaN
Since the ED chip is formed on a sapphire substrate, a pair of electrodes is formed on a nitride semiconductor on sapphire.

【００３６】パッケージ開口部にダイボンド機器を利用
してＡｇペーストを利用して各ＬＥＤチップを開口部底
面に配置させた。Ａｇペーストを硬化させることにより
ＬＥＤチップを固定させた。赤色のＬＥＤチップはＬＥ
Ｄチップを構成する基板自体が導電性を持つため、パッ
ケージ開口部底面の銅箔パターン上に配置すると共にＬ
ＥＤチップの一方の電極を電気的に接続させることがで
きる。他方、窒化物半導体を用いたＬＥＤチップは、サ
ファイアが絶縁性であるためＡｇペーストで固定させた
だけでは導通を取ることができない。そのため、ＬＥＤ
チップの各電極と開口部に露出した銅箔パターン上に金
線を用いてワイヤボンディングさせた。これによって、
各ＬＥＤチップとパッケージの外部電極とを電気的に接
続させることができる。各ＬＥＤチップが発光できるこ
とを確認した後、開口部内にエポキシ樹脂を塗布、硬化
させＬＥＤチップなどを保護するモールドを形成させ
た。硝子エポキシ樹脂を開口部ごとに予め設けられた切
り込みに沿って外力を掛けることにより個々の発光装置
を形成させる。Each LED chip was arranged on the bottom of the opening of the package by using an Ag paste by using a die bonding apparatus. The LED chip was fixed by curing the Ag paste. The red LED chip is LE
Since the substrate itself constituting the D chip has conductivity, it is arranged on the copper foil pattern on the bottom surface of the package opening and L
One electrode of the ED chip can be electrically connected. On the other hand, in an LED chip using a nitride semiconductor, sapphire is insulative, so that continuity cannot be achieved only by fixing it with an Ag paste. Therefore, LED
Wire bonding was performed using gold wires on each electrode of the chip and the copper foil pattern exposed at the opening. by this,
Each LED chip and the external electrode of the package can be electrically connected. After confirming that each LED chip could emit light, an epoxy resin was applied and cured in the opening to form a mold for protecting the LED chip and the like. Each light emitting device is formed by applying an external force to the glass epoxy resin along a notch provided in advance for each opening.

【００３７】形成された発光装置をドットマトリックス
状に発光装置搭載用基板に半田を用いて配置させる。発
光装置がドットマトリックス状に配置可能に予め形成さ
れた銅箔パターンを形成させた硝子エポキシ基板を利用
した。搭載用基板上には発光装置の各外部電極及びＧＮ
Ｄ電極と接続される銅箔面以外を予めレジストで被覆さ
せてある。搭載用基板上に各発光装置を配置させ、上か
ら型を利用して固定させた後フロー半田装置に通すこと
によって導通及び固定を行った。搭載用基板も多層基板
となっており、搭載用基板中にＧＮＤ電極とのみ接続さ
れるＧＮＤ層が設けられている。ＧＮＤ層を介して各発
光装置のシールド層と全て接続されている。The light emitting device thus formed is arranged in a dot matrix on a light emitting device mounting substrate by using solder. A glass epoxy substrate having a copper foil pattern formed in advance so that the light emitting device can be arranged in a dot matrix was used. On the mounting substrate, each external electrode of the light emitting device and GN
The surface other than the copper foil surface connected to the D electrode is coated with a resist in advance. Each light emitting device was placed on the mounting substrate, fixed using a mold from above, and then passed through a flow soldering device to conduct and fix. The mounting substrate is also a multilayer substrate, and a GND layer connected only to the GND electrode is provided in the mounting substrate. All are connected to the shield layer of each light emitting device via the GND layer.

【００３８】また、各発光装置を駆動させるドライバー
を搭載させた駆動基板を発光装置搭載用基板とほぼ同じ
大きさとさせ接続ピンを利用して発光装置搭載用基板と
駆動基板とを接続及び固定を行った。接続ピンの一つを
各発光装置のシールド層と接続され搭載用基板のＧＮＤ
層を介して駆動基板のＧＮＤ層に接続させる。駆動基板
のＧＮＤ層は各ＬＥＤチップとは電気的に独立してアー
スと接続されている。これにより、発光装置の表面側に
静電気を持った人などが接触してもＬＥＤチップを破壊
することなく発光装置を駆動させることができる。ま
た、裏面側に配置された駆動基板からの電磁波を発光装
置の表面に設けられたシールド層が吸収する。或いは外
部からの電磁波を駆動回路に悪影響を生じさせることな
く吸収させることでＥＭＩの影響が極めて少ないＬＥＤ
ディスプレイとすることができる。Further, the driving substrate on which the driver for driving each light emitting device is mounted is made substantially the same size as the light emitting device mounting substrate, and the light emitting device mounting substrate and the driving substrate are connected and fixed using connection pins. went. One of the connection pins is connected to the shield layer of each light emitting device and the GND of the mounting substrate
It connects to the GND layer of the drive substrate via the layer. The GND layer of the drive board is electrically connected to the ground independently of each LED chip. Thus, even if a person having static electricity contacts the surface of the light emitting device, the light emitting device can be driven without breaking the LED chip. Also, the shield layer provided on the front surface of the light emitting device absorbs the electromagnetic waves from the drive substrate disposed on the back surface side. Alternatively, an LED that has very little EMI effect by absorbing external electromagnetic waves without causing adverse effects on the drive circuit
It can be a display.

【００３９】（実施例２）さらに、ドットマトリックス
状に配置された発光装置の一つを光ビームにより照射し
半田を溶融させることにより取り出した。発光装置が部
分的に取り出された基板の電極上に半田ペーストを塗布
した後、新たな発光装置を配置させ光ビームを照射し
た。照射に伴い半田が溶融し基板上に発光装置を配置さ
せることができる。(Example 2) Further, one of the light emitting devices arranged in a dot matrix was irradiated with a light beam to take out the solder by melting it. After applying the solder paste on the electrodes of the substrate from which the light emitting device was partially removed, a new light emitting device was arranged and irradiated with a light beam. With the irradiation, the solder melts and the light emitting device can be arranged on the substrate.

【００４０】（比較例１）シールド層が設けられていな
い以外は実施例２とほぼ同様にして発光装置を部分的に
入れ替えてリペアさせた。リペアされた発光装置の硝子
エポキシ樹脂からなるパッケージ及び酸化銀で被覆した
エポキシ樹脂からなるレジスト膜が光ビーム照射時の熱
により変形し部分的に剥離を生じていた。このため、表
面レジスト損傷によるコントラスト比低下だけでなくＬ
ＥＤチップが不灯になるものもある。Comparative Example 1 A light emitting device was partially replaced and repaired in substantially the same manner as in Example 2 except that no shield layer was provided. In the repaired light emitting device, the package made of the glass epoxy resin and the resist film made of the epoxy resin coated with silver oxide were deformed by heat at the time of light beam irradiation, and partially peeled off. Therefore, not only is the contrast ratio lowered due to surface resist damage, but also L
Some ED chips are not lit.

【００４１】[0041]

【発明の効果】本発明は発光装置の表面上に電気伝導性
のあるシールド層を設けることにより屋内など人が直接
触れることができるような発光装置においても静電気等
によるＬＥＤの損傷を回避することができると共に外部
から電磁波或いは内部駆動回路からの電磁波による各種
電子機器の誤作動などを防止しうるものである。According to the present invention, by providing an electrically conductive shield layer on the surface of a light emitting device, even in a light emitting device that can be directly touched by a person such as indoors, damage of an LED due to static electricity or the like can be avoided. In addition, malfunctions of various electronic devices due to electromagnetic waves from the outside or electromagnetic waves from the internal drive circuit can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 図１は本発明の発光装置の模式的平面図を示
す。FIG. 1 is a schematic plan view of a light emitting device of the present invention.

【図２】 図２は図１におけるＡＡ断面を示す。FIG. 2 shows an AA cross section in FIG.

【図３】 図３は本発明の別の発光装置の模式的平面図
を示す。FIG. 3 is a schematic plan view of another light emitting device of the present invention.

【図４】 図４は本発明の発光装置を利用したＬＥＤデ
ィスプレイの部分断面図を示す。FIG. 4 is a partial sectional view of an LED display using the light emitting device of the present invention.

【図５】 図５はＬＥＤディスプレイの一部を構成する
模式的斜視図を示す。FIG. 5 is a schematic perspective view showing a part of an LED display.

【符号の説明】[Explanation of symbols]

１００、３００・・・発光装置 １０１、３０１・・・シールド層 １０２、３０２・・・ＧＮＤ電極 １０３、３０３・・・パッケージ １０４、３０４・・・モールド部材 １０５、３０５・・・ＬＥＤ １０６、３０６・・・外部電極 １０７・・・光吸収層 １０８・・・ピンホール ４０１・・・発光装置搭載用基板 ４０２・・・駆動基板 ４０３・・・ＧＮＤ電極とＧＮＤ層を接続させる導電性
パターン ４０４・・・発光装置搭載用基板のＧＮＤ層 ４０５・・・ピン ４０６・・・駆動基板用のＧＮＤ層 ４０７・・・駆動基板に搭載されたＣＰＵ ４０８・・・半田 ５００・・・発光装置 ５０１・・・発光装置配置用基板 ５０２・・・駆動基板 ５０５・・・ ５１０・・・ＬＥＤディスプレイ100, 300 ... Light emitting device 101, 301 ... Shield layer 102, 302 ... GND electrode 103, 303 ... Package 104, 304 ... Mold member 105, 305 ... LED 106, 306 ..External electrode 107 ... Light absorbing layer 108 ... Pin hole 401 ... Light emitting device mounting substrate 402 ... Drive substrate 403 ... Conductivity pattern 404 connecting GND electrode and GND layer. · GND layer 405 of the light emitting device mounting substrate 405 ··· Pin 406 ··· GND layer 407 for the driving substrate 407 ··· CPU mounted on the driving substrate 408 ··· Solder 500 ··· Light emitting device 501 ··· Substrate for arranging light emitting device 502 ・ ・ ・ Drive substrate 505 ・ ・ ・ 510 ・ ・ ・ LED display

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 絶縁性を有するパッケージ(103)の凹部
内に配置されたＬＥＤ(105)と、該ＬＥＤ(105)と接続さ
れパッケージ凹部内と外部とを電気的に接続される外部
電極(106)と、パッケージ(103)の凹部周辺の表面上に設
けられたシールド層(101)と、該シールド層(101)と電気
的に接続されると共に少なくともパッケージ(103)裏面
或いは側面に設けられた接地線に接続用のＧＮＤ電極(1
02)とを有する発光装置。An LED (105) arranged in a concave portion of a package (103) having an insulating property, and an external electrode connected to the LED (105) and electrically connecting the inside of the package concave portion to the outside. 106), a shield layer (101) provided on the surface around the concave portion of the package (103), and electrically connected to the shield layer (101) and provided at least on the back surface or side surface of the package (103). GND electrode (1
02). 【請求項２】 前記シールド層(101)上に光吸収層(107)
を有する請求項１記載の発光装置。2. A light absorbing layer (107) on the shield layer (101).
The light emitting device according to claim 1, comprising: 【請求項３】 前記シールド層(101)はパッケージ(103)
に対して熱伝導性の高いが金属或いは合金であると共に
前記パッケージ(103)の主材料が硝子エポキシ樹脂であ
る請求項２記載の発光装置。3. The package according to claim 1, wherein said shield layer is a package.
The light emitting device according to claim 2, wherein the package (103) is made of a glass epoxy resin, and is made of a metal or an alloy having high thermal conductivity. 【請求項４】 前記ＧＮＤ電極(102)に接続されるシー
ルド層(101)はＬＥＤ(105)と電気的に接続される外部電
極(106)と電気的に独立している請求項１記載の発光装
置。4. The method according to claim 1, wherein the shield layer connected to the GND electrode is electrically independent of an external electrode electrically connected to the LED. Light emitting device. 【請求項５】 前記ＬＥＤ(105)が窒化物半導体からな
る請求項１記載の発光装置。5. The light emitting device according to claim 1, wherein said LED (105) is made of a nitride semiconductor. 【請求項６】 絶縁性を有するパッケージ(103)の凹部
内に配置されたＬＥＤ(105)と、該ＬＥＤ(105)と接続さ
れパッケージ凹部内と外部とを電気的に接続される外部
電極(106)と、パッケージ(103)の凹部周辺の表面上に設
けられたシールド層(101)と電気的に接続されると共に
接地線に接続用のＧＮＤ電極(102)が設けられた発光装
置(100)を複数配置する発光装置配置用基板(401)と、該
発光装置配置用基板(401)の発光観測面に対して裏面側
に前記発光装置(100)を各々駆動させる駆動回路が配置
された駆動基板(302)とを有し、前記発光装置配置用基
板(401)及び駆動基板(402)は多層基板であると共に前記
各基板中に表面シールド層(101)と電気的に接続された
ＧＮＤ層(404)、(406)を有することを特徴とするＬＥＤ
表示装置。6. An LED (105) disposed in a concave portion of a package (103) having an insulating property, and an external electrode connected to the LED (105) and electrically connecting the inside of the package concave portion to the outside. 106) and a light emitting device (100) electrically connected to a shield layer (101) provided on the surface around the concave portion of the package (103) and provided with a GND electrode (102) for connection to a ground line. A plurality of light emitting device arranging substrates (401) are arranged, and a driving circuit for driving each of the light emitting devices (100) is arranged on the back surface side with respect to the luminescence observation surface of the light emitting device arranging substrate (401). A driving substrate (302), wherein the light emitting device disposing substrate (401) and the driving substrate (402) are multilayer substrates, and a GND electrically connected to the surface shield layer (101) in each of the substrates. LED having layers (404) and (406)
Display device.
JP14187498A 1998-05-22 1998-05-22 LED display device Expired - Lifetime JP4536171B2 (en)

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