JPH11335834A - Dielectric thin film forming device and formation of dielectric thin film - Google Patents
Dielectric thin film forming device and formation of dielectric thin filmInfo
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- JPH11335834A JPH11335834A JP14388798A JP14388798A JPH11335834A JP H11335834 A JPH11335834 A JP H11335834A JP 14388798 A JP14388798 A JP 14388798A JP 14388798 A JP14388798 A JP 14388798A JP H11335834 A JPH11335834 A JP H11335834A
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- thin film
- dielectric thin
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、誘電体薄膜形成装
置及び誘電体薄膜の形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric thin film forming apparatus and a dielectric thin film forming method.
【０００２】[0002]
【従来の技術】ペロブスカイト型構造を有する誘電体薄
膜は、優れた強誘電性、圧電性、焦電性及び電気光学特
性を示し、各種センサ等幅広いデバイスに有効な材料と
して注目されており、今後その利用範囲は拡大していく
と見られる。2. Description of the Related Art Dielectric thin films having a perovskite structure exhibit excellent ferroelectricity, piezoelectricity, pyroelectricity, and electro-optical properties, and are attracting attention as effective materials for a wide range of devices such as various sensors. Its use is expected to expand.
【０００３】誘電体薄膜の代表例として、ＡＢＯ3構造
を示すＰｂＴｉＯ3系薄膜は、高い焦電特性を有するこ
とから、焦電型赤外線検出素子の焦電体材料として利用
されている。焦電型赤外線検出素子は、強誘電体の焦電
効果を利用したセンサである。強誘電体は内部に一定方
向の自発分極を有しており、その表面に正及び負電荷を
発生させる。大気中における定常状態では、大気中の分
子が持つ電荷と結合して中性状態になっている。全ての
物体は温度に応じた赤外線を放出しており、赤外線検出
部に入射した赤外線量に応じた温度変化を強誘電体に生
じさせる。As a typical example of a dielectric thin film, a PbTiO 3 -based thin film having an ABO 3 structure has been used as a pyroelectric material of a pyroelectric infrared detecting element because of its high pyroelectric characteristics. The pyroelectric infrared detecting element is a sensor using a pyroelectric effect of a ferroelectric substance. The ferroelectric has spontaneous polarization in a certain direction inside, and generates positive and negative charges on its surface. In a steady state in the atmosphere, it is in a neutral state by being combined with electric charges of molecules in the atmosphere. All the objects emit infrared rays according to the temperature, and cause a temperature change in the ferroelectric substance according to the amount of infrared rays incident on the infrared ray detecting unit.
【０００４】この他にも、ＰｂＺｒＴｉＯ3系薄膜を用
いた圧電センサやアクチュエータあるいは強誘電体メモ
リ、またＳｒＴｉＯ3系薄膜を用いたＩＣのゲートキャ
パシタ等、誘電体薄膜を利用したデバイスは幅広く開発
されている。In addition, devices using dielectric thin films, such as piezoelectric sensors and actuators or ferroelectric memories using PbZrTiO 3 based thin films, and gate capacitors of ICs using SrTiO 3 based thin films, have been widely developed. ing.
【０００５】このような誘電体薄膜の形成には、一般的
に高周波スパッタ装置が用いられる。以下に、従来の誘
電体薄膜形成用のスパッタ装置について図面を参照しな
がら説明する。図５は従来の高周波マグネトロンスパッ
タ装置の構成を示すものである。図５において、１１は
真空チャンバーで、その内部に成膜したい材料の組成で
構成されたスパッタターゲット１２を下部電極（陰極）
に、そして基板設置用の基板ホルダー１３を上部電極に
有する。基板ホルダー１３には、実際に基板１４を設置
した支持体１５を基板設置面を下にして支持する。ま
た、１６は基板加熱用のヒーターであり、ヒーター１６
からの熱は輻射によってまず支持体１５を加熱し、さら
に熱伝導によって基板１４を加熱する。１７，１８は真
空チャンバー内を排気するための真空ポンプで、それぞ
れ１７は大気から〜１０-1Ｐａ程度までの粗引き用のロ
ータリーポンプ、また１８は１０-1〜１０-5Ｐａまでに
本排気するためのクライオポンプである。さらに、アル
ゴンガスボンベ１９と酸素ガスボンベ２０から各スパッ
タガスを真空チャンバー内に供給できるように配管され
ている。In forming such a dielectric thin film, a high frequency sputtering apparatus is generally used. Hereinafter, a conventional sputtering apparatus for forming a dielectric thin film will be described with reference to the drawings. FIG. 5 shows a configuration of a conventional high-frequency magnetron sputtering apparatus. In FIG. 5, reference numeral 11 denotes a vacuum chamber, in which a sputter target 12 composed of a composition of a material to be formed into a film is placed on a lower electrode (cathode).
And a substrate holder 13 for mounting the substrate on the upper electrode. The support 15 on which the substrate 14 is actually installed is supported by the substrate holder 13 with the substrate installation surface facing down. Reference numeral 16 denotes a heater for heating the substrate.
The heat from the first heats the support 15 by radiation and then heats the substrate 14 by heat conduction. Reference numerals 17 and 18 denote vacuum pumps for evacuating the inside of the vacuum chamber. Reference numeral 17 denotes a rotary pump for rough evacuation from the atmosphere to about -10 -1 Pa, and reference numeral 18 denotes a rotary pump for evacuation from 10 -1 to 10 -5 Pa. It is a cryopump for exhausting. Further, piping is provided so that each sputtering gas can be supplied from the argon gas cylinder 19 and the oxygen gas cylinder 20 into the vacuum chamber.
【０００６】以上のように構成されたスパッタ装置を用
いた誘電体薄膜の形成方法について、以下に説明する。
ガラスやシリコン等の基板１４を設置した支持体１５を
基板ホルダー１３に取り付け、排気ポンプ１７，１８に
よって真空チャンバー１１内を〜１０-5Ｐａ程度にまで
真空排気する。その後、基板１４を基板加熱用のヒータ
ー１６で加熱し、スパッタガスであるアルゴン１９等を
導入する。さらにＲＦ電源２１によって高周波を陰極に
印加することでターゲット１２からスパッタ粒子が飛び
出し、基板１４に所望の薄膜が形成できる。[0006] A method for forming a dielectric thin film using the sputtering apparatus configured as described above will be described below.
A support 15 on which a substrate 14 such as glass or silicon is placed is attached to the substrate holder 13, and the inside of the vacuum chamber 11 is evacuated to about −10 −5 Pa by the exhaust pumps 17 and 18. Thereafter, the substrate 14 is heated by a heater 16 for heating the substrate, and argon 19 or the like as a sputtering gas is introduced. Further, by applying a high frequency to the cathode by the RF power source 21, sputtered particles fly out of the target 12 and a desired thin film can be formed on the substrate 14.
【０００７】前記の薄膜の特性を向上させるためには、
いかに結晶性良くかつ緻密に薄膜を成長させるかという
事が課題となる。特にペロブスカイト型誘電体薄膜の形
成には〜６００℃というような比較的高い基板加熱温度
を要する材料が多く、しかも基板加熱温度が薄膜材料の
組成や結晶性に大きく影響を及ぼすことから、成膜条件
において加熱温度の制御が最も重要なパラメータの１つ
となる。In order to improve the characteristics of the thin film,
The problem is how to grow a thin film with good crystallinity and high density. In particular, for forming a perovskite dielectric thin film, there are many materials that require a relatively high substrate heating temperature of up to 600 ° C., and the substrate heating temperature greatly affects the composition and crystallinity of the thin film material. Control of the heating temperature is one of the most important parameters under the conditions.
【０００８】[0008]
【発明が解決しようとする課題】誘電体薄膜に関わら
ず、真空蒸着法あるいはスパッタ法やＣＶＤ（化学気相
成長）法等の真空プロセスを用いて薄膜を成長する場
合、真空チャンバー内において堆積に寄与する原子分子
の分布がいかに均一かという事や、基板加熱を行う際に
は熱分布がいかに均一かという点が非常に重要になる。
特に量産時などのように、一度に多くの基板に薄膜を堆
積するために大型装置を用いる場合などにおいては、そ
れぞれの基板間での膜質の均質性が著しく悪化する。特
にＡＢＯ3構造を有するペロブスカイト型誘電体薄膜の
形成は高い基板加熱温度が必要な場合が多く、また加熱
温度に特性が大きく左右されることが多いために、それ
ぞれの基板位置に対する温度の不均一性から、同時に多
量の基板に薄膜を形成することは困難であった。When a thin film is grown using a vacuum process such as a vacuum deposition method, a sputtering method, or a CVD (chemical vapor deposition) method, regardless of the dielectric thin film, the deposition is performed in a vacuum chamber. It is very important how the distribution of the contributing atomic molecules is uniform and how the heat distribution is uniform when heating the substrate.
In particular, when a large-scale apparatus is used to deposit thin films on many substrates at once, such as during mass production, the uniformity of film quality between the substrates is significantly deteriorated. In particular, the formation of a perovskite dielectric thin film having an ABO 3 structure often requires a high substrate heating temperature, and the characteristics are greatly influenced by the heating temperature. Therefore, it was difficult to form a thin film on a large number of substrates at the same time.
【０００９】本発明は前記のような問題点を解決するも
のであり、従来より大量の基板を均質に加熱するための
支持体を有する誘電体薄膜形成装置及び誘電体薄膜の形
成方法を提供することを目的とする。The present invention solves the above-mentioned problems, and provides a dielectric thin film forming apparatus and a method of forming a dielectric thin film having a support for uniformly heating a large number of substrates. The purpose is to:
【００１０】[0010]
【課題を解決するための手段】この目的を達成するため
に本発明の誘電体薄膜形成装置は、加熱ヒーター側の表
面の粗さを３〜１０μｍに加工を施した、あるいは熱吸
収用の皮膜を加熱ヒーター側の表面に塗布か蒸着した基
板設置用の支持体を有する、また、熱伝導向上用の皮膜
を基板設置面に塗布した基板設置用の支持体を有したも
のである。また、本発明の誘電体薄膜形成装置は、２段
階以上の厚みに加工した基板設置用支持体を有したもの
である。In order to achieve the above object, a dielectric thin film forming apparatus according to the present invention has a surface roughness of 3 to 10 μm on the heater side, or a film for heat absorption. Is coated or vapor-deposited on the surface on the side of the heater, and a substrate-mounting support is formed by applying a film for improving heat conduction to the substrate-mounting surface. Further, the dielectric thin film forming apparatus of the present invention has a substrate-installing support processed to a thickness of two or more steps.
【００１１】さらに、本発明の誘電体薄膜の形成方法
は、少なくともＰｂとＴｉを含むＡＢＯ3型のペロブス
カイト型誘電体薄膜を形成する工程において、基板を支
持体に設置する面に熱吸収用の皮膜を予め塗布あるいは
蒸着した後に、基板設置用の支持体に基板を設置して、
誘電体薄膜の形成を行うものである。Further, in the method of forming a dielectric thin film of the present invention, in the step of forming an ABO 3 type perovskite dielectric thin film containing at least Pb and Ti, a surface for mounting a substrate on a support is provided with a heat absorbing material. After coating or vapor-depositing the film in advance, place the substrate on the support for substrate installation,
This is for forming a dielectric thin film.
【００１２】[0012]
【発明の実施の形態】本発明の請求項１及び５記載の発
明は、表面の粗さを３〜１０μｍに加工を施すか、ある
いは熱吸収用の皮膜を基板加熱ヒーター側の面に塗布ま
たは蒸着した基板設置用の支持体を有した薄膜形成装
置、特に少なくともＰｂとＴｉを含むＡＢＯ3型のペロ
ブスカイト型誘電体薄膜を形成するための装置であり、
大量の基板を均質に加熱することでそれぞれの基板位置
に対する温度の均一性を向上させ、同時に多量の基板に
薄膜を均質に形成出来るという作用を有する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claims 1 and 5 of the present invention is characterized in that the surface is processed to a roughness of 3 to 10 μm, or a film for absorbing heat is applied to the surface on the substrate heater side. An apparatus for forming a thin film forming apparatus having a support for mounting a vapor-deposited substrate, particularly an apparatus for forming an ABO 3 type perovskite type dielectric thin film containing at least Pb and Ti,
By uniformly heating a large number of substrates, the uniformity of temperature at each substrate position is improved, and at the same time, a thin film can be uniformly formed on a large number of substrates.
【００１３】また、請求項１０及び１５記載の発明は、
熱伝導率向上用の皮膜を基板設置面に塗布するか、ある
いは２段階以上の厚みに加工した基板設置用支持体を有
した薄膜形成装置、特に少なくともＰｂとＴｉを含むＡ
ＢＯ3型のペロブスカイト型誘電体薄膜を形成するため
の装置であり、大量の基板を均質に加熱することでそれ
ぞれの基板位置に対する温度の均一性を向上させ、同時
に多量の基板に薄膜を均質に形成出来るという作用を有
する。The invention according to claims 10 and 15 is:
A film for improving thermal conductivity is applied to a substrate installation surface, or a thin film forming apparatus having a substrate installation support processed to two or more thicknesses, particularly an A containing at least Pb and Ti
This is a device for forming a BO 3 type perovskite type dielectric thin film.It heats a large number of substrates uniformly to improve the temperature uniformity for each substrate position, and at the same time, uniformly deposits a thin film on a large number of substrates. It has the effect of being able to form.
【００１４】また、請求項１７記載の発明は、少なくと
もＰｂとＴｉを含むＡＢＯ3型のペロブスカイト型誘電
体薄膜を形成する工程において、基板を支持体に設置す
る面に熱吸収用の皮膜を塗布した後に基板設置用の支持
体に基板を設置して誘電体薄膜を形成したものであり、
基板支持体から基板への熱伝導率を向上させることで、
それぞれの基板に薄膜を安定にかつ均質に形成出来ると
いう作用を有する。According to a seventeenth aspect of the present invention, in the step of forming an ABO 3 type perovskite type dielectric thin film containing at least Pb and Ti, a film for absorbing heat is applied to a surface on which the substrate is placed on a support. After that, the substrate is placed on a support for substrate placement to form a dielectric thin film,
By improving the thermal conductivity from the substrate support to the substrate,
It has an effect that a thin film can be stably and uniformly formed on each substrate.
【００１５】（実施の形態１）以下、本発明の実施の形
態１を図面とともに説明する。本実施の形態では、図５
の高周波マグネトロンスパッタを用いて、誘電体薄膜の
一例としてＡＢＯ3型のペロブスカイト型誘電体薄膜で
あるＰｂＴｉＯ3薄膜を形成した。スパッタターゲット
１２には直径１０インチの焼結した（ＰｂＴｉＯ3）0.8
（ＰｂＯ）0.2を装着し、基板加熱ヒーター１６には従
来のシーズヒーターに変えてカーボンヒーターから熱が
均質に放射するように、ヒーター一面に窒化ホウ素皮膜
をコーティングしたｐ−ＢＮヒータを用いた。また基板
１４にはペロブスカイト型酸化物薄膜の形成によく用い
られているＭｇＯ単結晶基板を用いた。さらに基板設置
用の支持体１５には高温仕様のＳＵＳ３１０Ｓを用いて
いる。Embodiment 1 Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings. In the present embodiment, FIG.
The PbTiO 3 thin film which is an ABO 3 type perovskite type dielectric thin film was formed as an example of the dielectric thin film by using the high frequency magnetron sputtering of the above. A 10-inch diameter sintered (PbTiO 3 ) 0.8
(PbO) 0.2 was mounted, and a p-BN heater coated with a boron nitride film on one side of the heater was used as the substrate heater 16 so as to uniformly radiate heat from the carbon heater instead of the conventional sheathed heater. Further, as the substrate 14, an MgO single crystal substrate which is often used for forming a perovskite oxide thin film was used. Further, SUS310S of a high temperature specification is used for the support 15 for installing the substrate.
【００１６】図６は従来の基板設置用の支持体の構成を
示す平面及び断面図である。基板支持体１５は、直径２
５０ｍｍ、厚み１０ｍｍのＳＵＳ円板に４０ｍｍ角で１
ｍｍの深さの彫り込みが２５箇所加工された構造からな
り、この彫り込み部分にＭｇＯ基板１４を設置し、基板
１４の周辺を押さえバネで固定する。基板支持体１５は
基板設置面を下にして基板ホルダー１３にセットされる
ので、基板設置面と加熱ヒーター１６によって輻射加熱
される面とは反対の面になる。従って、まず加熱ヒータ
ー１６から輻射によって基板支持体１５を加熱し、そし
て基板支持体１５からの熱伝導によって基板１４は加熱
される。FIG. 6 is a plan view and a sectional view showing the structure of a conventional support for mounting a substrate. The substrate support 15 has a diameter of 2
50mm, 10mm thick SUS disk with 40mm square 1
It has a structure in which 25 engraved portions having a depth of mm are machined, and the MgO substrate 14 is placed on the engraved portions, and the periphery of the substrate 14 is fixed with a pressing spring. Since the substrate support 15 is set on the substrate holder 13 with the substrate installation surface facing down, the substrate installation surface is opposite to the surface to be radiated and heated by the heater 16. Therefore, first, the substrate support 15 is heated by radiation from the heater 16, and the substrate 14 is heated by heat conduction from the substrate support 15.
【００１７】まず最初に、このような薄膜形成装置を用
いて、ＲＦ電力＝１２００Ｗ、基板加熱温度＝６００
℃、ガス圧＝０．１５Ｐａ、Ａｒ／Ｏ2流量比＝２５／
１のスパッタ条件にてＰｂＴｉＯ3薄膜を約２μｍ程度
形成した。ここで基板設置枚数は５枚とし、設置位置は
図６のＡ，Ｂ，Ｃ，Ｄ，Ｅの５箇所とした。さらに、形
成したＰｂＴｉＯ3薄膜の特性評価方法としては、Ｘ線
回折法によって結晶性の評価を行った。First, using such a thin film forming apparatus, RF power = 1200 W, substrate heating temperature = 600
° C, gas pressure = 0.15 Pa, Ar / O 2 flow ratio = 25 /
Under a sputtering condition of 1, a PbTiO 3 thin film was formed to a thickness of about 2 μm. Here, the number of substrates to be installed was five, and the installation positions were five locations A, B, C, D, and E in FIG. Further, as a characteristic evaluation method of the formed PbTiO 3 thin film, the crystallinity was evaluated by an X-ray diffraction method.
【００１８】基板支持体１５の面内のＡからＥまでの各
位置に設置した基板１４上に形成したＰｂＴｉＯ3薄膜
の結晶性を比較してみると、Ｘ線回折パターンのＰｂＴ
ｉＯ3ピークの半値幅はＡ，Ｂ，Ｅ＝０．２３°、Ｃ＝
０．１９°、Ｄ＝０．２４°、さらにピーク強度はＡ，
Ｂ＝２３０ｋｃｐｓ、Ｃ＝２５０ｋｃｐｓ，Ｄ，Ｅ＝２
１０ｋｃｘｐｓであった。Ｘ線回折パターンでピークの
強度がより高く、しかも半値幅が小さい程膜の結晶性は
良好であるといえる。従って、この場合、Ｃ位置に設置
した基板１４上のＰｂＴｉＯ3薄膜の結晶性が最もよ
く、それ以外の場所に設置した基板１４上に形成したＰ
ｂＴｉＯ3薄膜の結晶性は半値幅で０．０４〜０．０５
°、ピーク強度で２０〜４０ｋｃｐｓ程度悪くなってい
る。A comparison of the crystallinity of the PbTiO 3 thin film formed on the substrate 14 placed at each of the positions A to E in the plane of the substrate support 15 shows that the X-ray diffraction pattern of PbT
The half width of the iO 3 peak is A, B, E = 0.23 °, C =
0.19 °, D = 0.24 °, and peak intensities A,
B = 230 kcps, C = 250 kcps, D, E = 2
It was 10 kcxps. It can be said that the higher the peak intensity in the X-ray diffraction pattern and the smaller the half width, the better the crystallinity of the film. Therefore, in this case, the PbTiO 3 thin film on the substrate 14 set at the position C has the best crystallinity, and the PbTiO 3 thin film formed on the substrate 14 set at other locations is the best.
The crystallinity of the bTiO 3 thin film has a half width of 0.04 to 0.05.
°, the peak intensity is about 20-40 kcps worse.
【００１９】基板支持体１５の面内で基板１４を設置す
る位置によって、形成した膜の結晶性が異なった原因と
しては一般的にはいくつか考えられるが、まずスパッタ
ターゲット１２から飛散するスパッタ粒子の分布による
ものや、基板加熱温度の不均一性による原因が考えられ
る。前者に関しては真空チャンバー１１に取り付けてあ
る石英ののぞき窓からプラズマの発光分布を計測するこ
とで確認を行ったが、この基板設置の範囲では大きな分
布の不均一性は確認できなかった。従って、後者の温度
の不均一性が大きな原因と考えられるが、実際の基板表
面上の温度を計測することは大変難しい。真空中である
ことや、接触式の熱電対等での計測では誤差が大きく６
００度に対して数度以下の正確な測定が困難である他、
通常の大型のスパッタ装置では、スパッタターゲット１
２から飛散するスパッタ粒子の分布を均質化するために
支持体１５は基板ホルダー１３ごと自転させる場合が多
く、定常的な基板表面の温度は不明な場合が多い。この
ように、実際には基板加熱ヒーター１６の出力、あるい
は、任意部分での温度モニタを加熱温度として制御して
いる装置がほとんどであり、たとえこれらの制御を正確
に行っていたとしても、例えば基板を設置する支持体１
５が受ける熱の吸収率や反射率、支持体１５から基板１
４に伝わる熱の伝導率等に経時変化があれば膜特性の再
現性は得られないし、これらの差が支持体１５の面内で
部分的に生じれば、先述の結果のように基板１４の設置
場所によって膜の結晶性の均一性が確保できなくなる。Although the crystallinity of the formed film may be generally different depending on the position of the substrate 14 in the plane of the substrate support 15, first, sputter particles scattered from the sputter target 12 may be considered. And the cause due to the non-uniformity of the substrate heating temperature. The former was confirmed by measuring the plasma light emission distribution through a quartz viewing window attached to the vacuum chamber 11, but no significant non-uniform distribution could be confirmed within the range of the substrate installation. Therefore, the latter non-uniformity is considered to be a major cause, but it is very difficult to measure the actual temperature on the substrate surface. The error is large when measuring in a vacuum or using a contact-type thermocouple.
In addition to the difficulty of measuring less than a few degrees to 00 degrees,
In a typical large sputtering apparatus, the sputtering target 1
In order to homogenize the distribution of sputter particles scattered from the substrate 2, the support 15 is often rotated together with the substrate holder 13, and the steady temperature of the substrate surface is often unknown. As described above, most of the devices actually control the output of the substrate heater 16 or the temperature monitor at an arbitrary portion as the heating temperature. Even if these controls are performed accurately, for example, Support 1 on which substrate is placed
Absorptivity and reflectance of the heat received by the substrate 5 and the substrate 1
If there is a change with time in the conductivity or the like of the heat transmitted to the substrate 4, the reproducibility of the film characteristics cannot be obtained. If these differences partially occur in the plane of the support 15, the substrate Depending on the installation location, uniformity of the crystallinity of the film cannot be ensured.
【００２０】本実施の形態では、誘電体薄膜の形成装置
の一つであるスパッタ装置において、表面を３〜１０μ
ｍの粗さで加工した基板設置用の支持体１５を用いた。
図１は本実施の形態の基板設置用支持体の構成を示す平
面及び断面図である。ここで、基板設置面とは反対の面
を任意の表面粗さで均質に加工してある。本実施の形態
では表面加工の手段として汎用手動式のサンドブラスト
を用いた。工程としては、支持体１５の基板設置面とは
反対の面つまり基板ホルダー１３にセットした際に加熱
ヒーター１６側となる面を、予め表面粗さ５μｍで均一
となるように３５０〜５００μｍの粒径を持つ（サンド
ブラストの粒番手は４０番）ＳｉＣ（炭化珪素）でブラ
スト加工した。この後、実際に支持体１５の表面粗さを
面内で実測してみるとＲａ＝５．０１から５．０３μｍ
とかなり均一に加工できていた。In the present embodiment, in a sputtering apparatus which is one of the apparatus for forming a dielectric thin film, the surface is 3 to 10 μm.
A substrate support 15 processed with a roughness of m was used.
FIG. 1 is a plan view and a cross-sectional view showing a configuration of a substrate-installing support according to the present embodiment. Here, the surface opposite to the substrate installation surface is uniformly processed with an arbitrary surface roughness. In this embodiment, a general-purpose manual sand blast is used as a surface processing means. As a step, the surface of the support 15 opposite to the substrate installation surface, that is, the surface on the side of the heater 16 when set on the substrate holder 13, has a particle size of 350 to 500 μm in advance so as to have a uniform surface roughness of 5 μm. Blasting was performed with SiC (silicon carbide) having a diameter (sandblast particle number is 40). Thereafter, when the surface roughness of the support 15 is actually measured in the plane, Ra = 5.01 to 5.03 μm
It was able to be processed quite uniformly.
【００２１】本実施の形態では、このような加工を施し
た支持体１５を有するスパッタ装置を用いて、誘電体薄
膜の一例であるＰｂＴｉＯ3薄膜を形成した。ここで、
各成膜条件は、ＲＦ電力＝１２００Ｗ、基板加熱温度＝
６００℃、ガス圧＝０．１５Ｐａ、Ａｒ／Ｏ2流量比＝
２５／１として、ＰｂＴｉＯ3薄膜を約２μｍ程度形成
した。また、先述の方法と同様に、基板設置枚数は５枚
とし、設置位置は図６のＡ，Ｂ，Ｃ，Ｄ，Ｅの５箇所と
した。さらに、形成したＰｂＴｉＯ3薄膜の特性評価方
法としては、Ｘ線回折法によって結晶性の評価を行っ
た。In the present embodiment, a PbTiO 3 thin film, which is an example of a dielectric thin film, is formed by using a sputtering apparatus having the support 15 subjected to such processing. here,
Each film forming condition is as follows: RF power = 1200 W, substrate heating temperature =
600 ° C., gas pressure = 0.15 Pa, Ar / O 2 flow ratio =
A PbTiO 3 thin film of about 2 μm was formed at 25/1. In addition, as in the above-described method, the number of substrates to be installed was set to five, and the installation positions were set to five positions A, B, C, D, and E in FIG. Further, as a characteristic evaluation method of the formed PbTiO 3 thin film, the crystallinity was evaluated by an X-ray diffraction method.
【００２２】基板支持体１５の面内のＡからＥまでの各
位置に設置した基板１４上に形成したＰｂＴｉＯ3薄膜
の結晶性を比較してみると、Ｘ線回折パターンのＰｂＴ
ｉＯ3ピークの半値幅はＡ，Ｂ，Ｅ＝０．２１°、Ｃ，
Ｅ＝０．１９°、さらにピーク強度はＡ，Ｂ，Ｃ，Ｄ＝
２５０ｋｃｐｓ、Ｅ＝２４０ｋｃｘｐｓであった。従っ
て上述の従来の結果と比較してみても基板１４の位置に
対する結晶性のバラツキが大幅に低減しており、本実施
の形態の支持体を有したスパッタ装置を用いてＰｂＴｉ
Ｏ3薄膜を形成した場合、支持体に加工を施さない場合
に比べて著しく結晶性の均一性の向上、さらには結晶性
自体の向上が確認できた。この結果は、従来の基板支持
体１５に比べて、本実施の形態の基板設置用の支持体１
５の面内における温度の分布がより均一化出来た結果に
よるものである。A comparison of the crystallinity of the PbTiO 3 thin film formed on the substrate 14 placed at each of the positions A to E in the plane of the substrate support 15 shows that the X-ray diffraction pattern of PbT
The half widths of the iO 3 peaks are A, B, E = 0.21 °, C,
E = 0.19 °, and the peak intensities are A, B, C, D =
250 kcps, E = 240 kcxps. Therefore, even when compared with the above-described conventional results, the variation in the crystallinity with respect to the position of the substrate 14 is greatly reduced, and the sputtering apparatus having the support of the present embodiment is used to form PbTi.
When the O 3 thin film was formed, it was confirmed that the uniformity of crystallinity was remarkably improved and the crystallinity itself was improved as compared with the case where the support was not processed. This result shows that the support 1 for mounting a substrate according to the present embodiment is compared with the conventional substrate support 15.
This is due to the result that the temperature distribution in the plane of No. 5 could be made more uniform.
【００２３】基板設置用の支持体１５にはＳＵＳ３１０
Ｓを用いているが、通常の新品状態では加工精度よく作
られた場合、表面粗さは約１μｍ以下で均一とするのが
一般的である。この場合支持体１５の面内の基板設置位
置に対する温度のバラツキは問題とはならないが、通常
の繰り返し成膜によって支持体１５の状態も変化する。
スパッタ粒子が付着する基板１４設置面側はもちろんの
事、基板１４設置面とは反対の面も、加熱ヒーター１６
による輻射加熱によって徐々に金属光沢をなくし黒化
（酸化）していく。しかもこれらの変化は面内に対して
一様でなく、また、経時的に再現性のあるものでもな
い。従って、このような支持体１５の面の状態変化によ
ってヒーター１６からの熱の反射や吸収率が変化し、基
板上に形成する膜特性のバラツキや再現性のなさを生じ
ていると考えられる。SUS310 is used as the support 15 for substrate installation.
Although S is used, when it is made with high processing accuracy in a normal new state, the surface roughness is generally about 1 μm or less and uniform. In this case, the temperature variation with respect to the substrate installation position in the plane of the support 15 is not a problem, but the state of the support 15 is also changed by ordinary repeated film formation.
Not only the surface on which the sputtered particles are attached, but also the surface opposite to the surface on which the substrate 14 is attached, the heater 16
Radiation heating gradually removes metallic luster and blackens (oxidizes). Moreover, these changes are not uniform in the plane and are not reproducible over time. Therefore, it is considered that such a change in the state of the surface of the support 15 changes the reflection and absorptivity of the heat from the heater 16, causing variations in the characteristics of the film formed on the substrate and poor reproducibility.
【００２４】特に、本実施の形態の基板支持体１５は、
初期からの支持体表面の経時変化に対する膜特性の変化
が従来の支持体１５を用いた場合に比べて極めて小さい
ことも確認できており、再現性という観点でも有効であ
る。In particular, the substrate support 15 of the present embodiment
It has also been confirmed that the change in the film properties with respect to the temporal change of the support surface from the beginning is extremely small as compared with the case where the conventional support 15 is used, and this is also effective from the viewpoint of reproducibility.
【００２５】さらに、本実施の形態では、工程として支
持体１５の基板設置面とは反対の面つまり基板ホルダー
１３にセットした際に加熱ヒーター１６側となる面を、
予め表面粗さ５μｍで均一となるように３５０〜５００
μｍの粒径を持つ（サンドブラストの粒番手は４０番）
ＳｉＣ（炭化珪素）でブラスト加工したが、粒径で１４
９〜１７７μｍ（番手は１００番）を用いた場合表面粗
さは約３μｍ、また粒径で７１０〜１０００μｍ（番手
は２０番）を用いると約１０μｍの表面粗さで加工が可
能となり、この範囲で加工した基板支持体１５も有効と
なる。Further, in the present embodiment, the surface opposite to the substrate mounting surface of the support 15, that is, the surface facing the heater 16 when set on the substrate holder 13,
350 to 500 in advance so as to be uniform with a surface roughness of 5 μm.
With a particle size of μm (sandblast is 40th)
Blasted with SiC (silicon carbide)
When using 9 to 177 μm (number is 100), the surface roughness is about 3 μm, and when using a particle size of 710 to 1000 μm (number is 20), it is possible to process with a surface roughness of about 10 μm. The substrate support 15 processed in the step is also effective.
【００２６】本実施の形態で用いた加工手段である物理
的手法であるサンドブラストの他、強酸処理などの化学
的研磨方法による加工も同様の効果を有する。In addition to sandblasting, which is a physical method, which is a processing means used in the present embodiment, processing by a chemical polishing method such as a strong acid treatment has the same effect.
【００２７】（実施の形態２）以下、本実施の形態２を
図面とともに説明する。(Embodiment 2) Hereinafter, Embodiment 2 will be described with reference to the drawings.
【００２８】図５に示したスパッタ装置において基板加
熱の原理は、基板加熱ヒーター１６から輻射で加熱され
た基板支持体１５が、さらに基板１４に熱を伝導する事
によって行われる。輻射加熱方式はヒーター設置方式に
比べて面内分布が均一である一方、実際の基板表面に必
要な温度に対してヒーターの温度は格段に高い温度が必
要となる。例えばペロブスカイト型誘電体薄膜の一例で
あるＰｂＴｉＯ3薄膜の場合、結晶性等の膜特性から６
００℃という高温が必要となる。この温度自体、通常の
真空装置に用いているシーズヒーターでは実現不可能な
温度であるが、あくまでもこの温度は基板表面上で必要
な温度であり、基板支持体１５さらには基板加熱ヒータ
ー１６はさらに高温が必要となる。一例では６００℃の
基板表面温度を得るためには基板支持体１５は６６０℃
に加熱する必要があり、さらにその支持体１５を１０ｍ
ｍ離れた位置から輻射で加熱するためにはヒーター温度
を８４０℃にまで上げる必要があった。つまり基板表面
で必要な温度より２４０℃も高温が必要であった。特
に、基板加熱ヒーター１６から基板支持体１５を加熱す
るための１８０℃のロスは大きく、そのほとんどが支持
体１５の表面反射である。The principle of substrate heating in the sputtering apparatus shown in FIG. 5 is that the substrate support 15 heated by radiation from the substrate heater 16 further conducts heat to the substrate 14. In the radiant heating method, the in-plane distribution is more uniform than in the heater installation method, but the temperature of the heater needs to be much higher than the actual temperature required for the substrate surface. For example, in the case of a PbTiO 3 thin film, which is an example of a perovskite-type dielectric thin film, the PbTiO 3 thin film has a thickness of 6 due to film characteristics such as crystallinity.
A high temperature of 00 ° C. is required. This temperature itself is a temperature that cannot be realized by a sheathed heater used in a normal vacuum apparatus, but this temperature is a necessary temperature on the substrate surface, and the substrate support 15 and the substrate heater 16 are High temperatures are required. In one example, to obtain a substrate surface temperature of 600 ° C., the substrate support 15 needs to be 660 ° C.
It is necessary to heat the support 15 to 10 m
In order to heat by radiation from a distance of m, the heater temperature had to be raised to 840 ° C. That is, a temperature higher than that required on the substrate surface by 240 ° C. was required. In particular, the loss at 180 ° C. for heating the substrate support 15 from the substrate heater 16 is large, and most of the loss is the surface reflection of the support 15.
【００２９】そこで本実施の形態では、加熱ヒーター１
６からの熱を基板設置用の支持体１５に効率よく吸収さ
せるための皮膜を、加熱ヒーター１６側の面に蒸着した
支持体１５を有するスパッタ装置を用いた。熱吸収効率
の向上、つまりは反射率の低減に有効な皮膜はＣ，Ｃ
ｒ，Ｃｕやそれらの酸化膜及び窒化膜等があるが、これ
らの材料の選択は実際使用する温度等によって使い分け
る必要がある。Therefore, in the present embodiment, the heater 1
A sputtering apparatus having a support 15 in which a film for efficiently absorbing the heat from 6 to the support 15 for substrate installation was deposited on the surface on the side of the heater 16 was used. The films effective for improving the heat absorption efficiency, that is, for reducing the reflectance are C, C
There are r, Cu, oxide films and nitride films thereof, and the like, but it is necessary to select these materials depending on the temperature actually used.
【００３０】本実施の形態では、皮膜の一例としてＮｉ
とＣｒの混合膜をコーティングした。まず最初に、カソ
ードにＮｉとＣｒ（８：２の混合比）からなるスパッタ
ターゲット１２を装着した通常のスパッタ装置を用い
て、スパッタターゲット側に（下側に）支持体１５を本
来加熱ヒーター１６側になる面（基板設置面とは反対の
面）を向けて基板ホルダー１３に装着し、ＲＦ電力＝１
５０Ｗ、基板加熱温度＝３００℃、ガス圧＝０．１Ｐ
ａ、Ａｒ流量＝２０のスパッタ条件にてＮｉＣｒ薄膜を
約５μｍ程度形成した。図２は本実施の形態の基板設置
用支持体の構成の平面及び断面図である。ここで２２は
コーティングしたＮｉ−Ｃｒ膜である。こうして基板設
置面とは反対の面にＮｉＣｒをコーティングした支持体
１５を、図５のスパッタ装置の基板ホルダー１３に今度
は基板設置面を通常通り下にして取り付け、基板加熱し
た際の基板ヒーター１６、基板支持体１５、そして基板
１４のそれぞれの温度を測定した。In this embodiment, Ni is used as an example of the film.
And a mixed film of Cr. First, using a normal sputtering apparatus in which a sputter target 12 made of Ni and Cr (mixing ratio of 8: 2) is attached to the cathode, the support 15 is placed on the sputter target side (below), and the heater 16 is used. Side (the surface opposite to the substrate installation surface) is oriented to the substrate holder 13 and RF power = 1
50W, substrate heating temperature = 300 ° C, gas pressure = 0.1P
a, A NiCr thin film was formed to a thickness of about 5 μm under sputtering conditions with an Ar flow rate of 20. FIG. 2 is a plan view and a cross-sectional view of the configuration of the substrate-installing support of the present embodiment. Here, reference numeral 22 denotes a coated Ni-Cr film. In this way, the support 15 having the surface opposite to the substrate installation surface coated with NiCr is mounted on the substrate holder 13 of the sputtering apparatus shown in FIG. , The substrate support 15 and the substrate 14 were measured.
【００３１】本実施の形態によって、ヒーター温度を７
８０℃にした時に、基板表面温度が６００℃となり、そ
の時の基板支持体１５の温度は６６０℃であった。つま
り基板表面で必要な温度より２４０℃も高温が必要であ
った従来例に比べて、本実施の形態では１８０℃の高温
ですんでおり、６０℃程度のヒーター温度の低温化が可
能となった。According to the present embodiment, the heater temperature is set to 7
At 80 ° C., the substrate surface temperature was 600 ° C., and the temperature of the substrate support 15 at that time was 660 ° C. That is, compared to the conventional example that required a higher temperature of 240 ° C. than that required on the substrate surface, the present embodiment requires a higher temperature of 180 ° C., and the heater temperature can be reduced to about 60 ° C. .
【００３２】ヒーター温度の低温化は、ヒーター周辺部
品の加熱による劣化を低減するほか、基板温度を冷却す
る時間の大幅な短縮にも効果があり、１プロセスあたり
のスループットの向上にもなる。さらに、基板支持体１
５に一面の皮膜コーティングは支持体の面内における基
板表面温度のバラツキ低減に有効である事は言うまでも
ない。The lowering of the heater temperature is effective not only for reducing deterioration due to heating of the heater peripheral parts, but also for significantly shortening the time for cooling the substrate temperature, and improving the throughput per process. Further, the substrate support 1
Needless to say, the coating on one side is effective in reducing the variation in the substrate surface temperature in the plane of the support.
【００３３】（実施の形態３）以下、本実施の形態３を
図面とともに説明する。Embodiment 3 Hereinafter, Embodiment 3 will be described with reference to the drawings.
【００３４】図５に示したスパッタ装置において基板加
熱の原理については上記実施の形態２の通りであり、基
板加熱ヒーター１６から輻射で加熱された基板支持体１
５が、さらに基板１４に熱を伝導する事によって行われ
る。実施の形態２では、加熱ヒーター１６から基板支持
体１５へ効率よく熱を伝える支持体１５について説明し
た。これによって大きくヒーター温度の低温化及び支持
体１５面内の温度の均一化が可能となったが、本実施の
形態３ではさらに基板支持体１５から基板１４への熱伝
導率の向上を目的とした。The principle of substrate heating in the sputtering apparatus shown in FIG. 5 is as described in the second embodiment, and the substrate support 1 heated by radiation from the substrate heater 16 is used.
5 is performed by further conducting heat to the substrate 14. In the second embodiment, the support 15 that efficiently transfers heat from the heater 16 to the substrate support 15 has been described. As a result, the temperature of the heater can be greatly reduced and the temperature in the plane of the support 15 can be made uniform. However, in the third embodiment, the purpose is to further improve the thermal conductivity from the substrate support 15 to the substrate 14. did.
【００３５】本実施の形態では、支持体１５からの熱を
基板１４に効率よく伝導させるための皮膜を、基板を設
置する面に蒸着した支持体１５を有するスパッタ装置を
用いた。熱伝導率の向上に有効な皮膜はＣ，Ｃｒ，Ｃｕ
やそれらの酸化膜及び窒化膜等があるが、これらの材料
の選択は実際使用する温度等によって使い分ける必要が
ある。In the present embodiment, a sputtering apparatus having a support 15 in which a film for efficiently conducting heat from the support 15 to the substrate 14 is deposited on a surface on which the substrate is to be placed is used. Coatings effective for improving thermal conductivity are C, Cr, Cu
And their oxide films and nitride films, and the like, and it is necessary to select these materials depending on the actual use temperature and the like.
【００３６】本実施の形態では、皮膜の一例としてＮｉ
とＣｒの混合膜をコーティングした。まず最初に、カソ
ードにＮｉとＣｒ（８：２の混合比）からなるスパッタ
ターゲット１２を装着した通常のスパッタ装置を用い
て、スパッタターゲット側に（下側に）支持体１５を本
来基板を設置する面を向けて（基板は未装着）基板ホル
ダー１３に装着し、ＲＦ電力＝１５０Ｗ、基板加熱温度
＝３００℃、ガス圧＝０．１Ｐａ、Ａｒ流量＝２０のス
パッタ条件にてＮｉＣｒ薄膜を約５μｍ程度形成した。
本実施の形態では基板を設置する面以外の部分にも皮膜
の付着がなされたが、基板を設置する面のみにコーティ
ングを行う場合には、それ以外の部分にマスクをかける
等で簡単に可能となる。図３は本実施の形態の基板設置
用支持体の構成を示す平面及び断面図である。ここで基
板を設置する面にはＮｉＣｒ膜２２がコーティングして
ある。こうして基板を設置する面にＮｉＣｒをコーティ
ングした支持体１５を、図５のスパッタ装置の基板ホル
ダー１３に同様に基板設置面を下にして取り付け、基板
加熱した際の基板ヒーター１６、基板支持体１５、そし
て基板１４のそれぞれの温度を測定した。In the present embodiment, Ni is used as an example of the film.
And a mixed film of Cr. First, using a normal sputtering apparatus equipped with a sputter target 12 made of Ni and Cr (mixing ratio of 8: 2) on the cathode, the support 15 is placed on the sputter target side (under the substrate). The NiCr thin film was placed on the substrate holder 13 with the RF power = 150 W, the substrate heating temperature = 300 ° C., the gas pressure = 0.1 Pa, and the Ar flow rate = 20. It was formed to a thickness of about 5 μm.
In this embodiment, the coating was applied to the portion other than the surface on which the substrate is to be installed.However, when coating is performed only on the surface on which the substrate is to be installed, it is easily possible by applying a mask to the other portion. Becomes FIG. 3 is a plan view and a cross-sectional view showing the configuration of the substrate-installing support of the present embodiment. Here, the surface on which the substrate is placed is coated with a NiCr film 22. The substrate 15 on which the substrate is to be placed is coated with NiCr in this manner, and the substrate is placed on the substrate holder 13 of the sputtering apparatus shown in FIG. , And the temperature of each of the substrates 14 was measured.
【００３７】本実施の形態によって、ヒーター温度を８
２０℃にした時に、基板表面温度が６００℃となり、そ
の時の基板支持体１５の温度は６４０℃であった。コー
ティング無しの従来例では、ヒーター温度を８４０℃に
した時に、基板表面温度が６００℃となり、その時の基
板支持体１５の温度は６６０℃であったことから、従来
例に比べて、本実施の形態では２０℃程度ではあるがヒ
ーター温度の低温化が可能となった。According to the present embodiment, the heater temperature is set at 8
At 20 ° C., the substrate surface temperature was 600 ° C., and the temperature of the substrate support 15 at that time was 640 ° C. In the conventional example without coating, when the heater temperature was 840 ° C., the substrate surface temperature was 600 ° C., and the temperature of the substrate support 15 was 660 ° C. at that time. Although the temperature is about 20 ° C. in the embodiment, the heater temperature can be lowered.
【００３８】ヒーター温度の低温化は、ヒーター周辺部
品の加熱による劣化の低減、１プロセスあたりのスルー
プットの向上、さらに、支持体の面内における基板表面
温度のバラツキ低減に有効である。Lowering the heater temperature is effective for reducing deterioration due to heating of the heater peripheral parts, improving the throughput per process, and reducing the variation in the substrate surface temperature in the plane of the support.
【００３９】本実施の形態は、上記の実施の形態２の発
明と組み合わせることによってより効果を増す事は言う
までもない。It is needless to say that the present embodiment is more effective when combined with the above-described second embodiment.
【００４０】（実施の形態４）以下、本発明の実施の形
態４を図面とともに説明する。(Embodiment 4) Hereinafter, Embodiment 4 of the present invention will be described with reference to the drawings.
【００４１】図４は本発明の薄膜形成装置が有する基板
支持体１５の一実施の形態の平面及び断面図である。図
４において、基板支持体１５は、直径２５０ｍｍ、中心
部の厚み１０ｍｍのＳＵＳ円板に４０ｍｍ角で１ｍｍの
深さの彫り込みが２５箇所加工された構造からなり、こ
の彫り込み部分にＭｇＯ基板１４を設置し、基板１４の
周辺を押さえバネで固定する。ここで本実施の形態で
は、支持体１５は基板設置面とは反対の面に２段階以上
の階段状の段差を有する。図１は一例として、支持体中
心から半径６５ｍｍの部分の厚みを１０ｍｍ、それより
外周の部分の厚みを７ｍｍとした２段階の厚み形状を持
たせた支持体である。FIG. 4 is a plan view and a sectional view of an embodiment of the substrate support 15 included in the thin film forming apparatus of the present invention. In FIG. 4, the substrate support 15 has a structure in which a SUS disk having a diameter of 250 mm and a central portion having a thickness of 10 mm is formed with 25 engravings of 40 mm square and 1 mm deep, and the MgO substrate 14 is formed on the engraved portion. It is installed and the periphery of the substrate 14 is fixed with a pressing spring. Here, in the present embodiment, the support 15 has two or more steps in steps on the surface opposite to the substrate installation surface. FIG. 1 shows, as an example, a support having a two-stage thickness shape in which the thickness of a portion with a radius of 65 mm from the center of the support is 10 mm, and the thickness of an outer peripheral portion is 7 mm.
【００４２】従来の支持体１５は面内一定の厚みで構成
されており、加熱ヒーター１６から支持体１５が受ける
熱は比較的均質ではある。しかしながら、支持体１５は
最外周部で基板ホルダー１３に設置しており、支持体１
５の面内ではこの基板ホルダー１３との設置部分で熱の
損失が生じる。従って支持体１５の中心から外周部にな
る程支持体１５からの熱の逃げが大きくなり、外周部に
取り付けられた基板表面の温度が低温化する。The conventional support 15 has a constant thickness in the plane, and the heat received by the support 15 from the heater 16 is relatively uniform. However, the support 15 is installed on the substrate holder 13 at the outermost periphery, and the support 1
In the plane 5, heat loss occurs at the portion where the substrate holder 13 is installed. Accordingly, the escape of heat from the support 15 increases from the center of the support 15 to the outer periphery, and the temperature of the surface of the substrate attached to the outer periphery decreases.
【００４３】本実施の形態は、基板設置用の支持体１５
の基板設置とは反対の面に少なくとも２段階の厚みを設
け、特に熱の逃げが最も大きい外周部の厚みを薄くする
ことで、支持体１５面内の温度を均一化する。In this embodiment, a support 15 for mounting a substrate is used.
By providing at least two levels of thickness on the surface opposite to the substrate installation, and particularly by reducing the thickness of the outer peripheral portion where heat escapes most, the temperature in the surface of the support 15 is made uniform.
【００４４】実際にＳＵＳ３１０Ｓの材質で加工して初
めて加熱する支持体１５の場合、厚み一定の従来の支持
体１５では６００℃のヒーター加熱に対して外周部と中
心部では７℃の差があったが、本実施の形態の支持体１
５では６００℃のヒーター加熱に対して外周部と中心部
の差は４℃と３℃程度低減した。In the case of the support 15 which is actually processed for the first time after being processed with the material of SUS310S, there is a difference of 7 ° C. between the outer peripheral portion and the central portion of the conventional support 15 having a constant thickness with respect to the heating of 600 ° C. However, the support 1 of the present embodiment
In No. 5, the difference between the outer peripheral portion and the central portion was reduced by about 4 ° C. and about 3 ° C. with respect to the heater heating at 600 ° C.
【００４５】この効果は、支持体１５の厚みを変化させ
る段階数を上げることでより効果を発する。This effect is more effective by increasing the number of steps for changing the thickness of the support 15.
【００４６】（実施の形態５）以下、本発明の実施の形
態５を図面とともに説明する。Embodiment 5 Hereinafter, Embodiment 5 of the present invention will be described with reference to the drawings.
【００４７】本実施の形態５では、図５の高周波マグネ
トロンスパッタを用いて、誘電体薄膜の一例としてＡＢ
Ｏ3型のペロブスカイト型誘電体薄膜であるＰｂＴｉＯ3
薄膜を形成した。スパッタターゲット１２には直径１０
インチの焼結した（ＰｂＴｉＯ3）0.8（ＰｂＯ）0.2を
装着し、基板加熱ヒーター１６には従来のシーズヒータ
ーに変えてカーボンヒーターから熱が均質に放射するよ
うに、ヒーター一面に窒化ホウ素皮膜をコーティングし
たｐ−ＢＮヒータを用いた。また基板１４にはペロブス
カイト型酸化物薄膜の形成によく用いられているＭｇＯ
単結晶基板を用いた。さらに基板設置用の支持体１５に
は高温仕様のＳＵＳ３１０Ｓを用いている。In the fifth embodiment, the high frequency magnetron sputtering shown in FIG.
PbTiO 3 which is an O 3 type perovskite type dielectric thin film
A thin film was formed. The sputter target 12 has a diameter of 10
Inch sintered (PbTiO 3 ) 0.8 (PbO) 0.2 was mounted, and a boron nitride film was applied to the entire surface of the substrate heater 16 so that heat was uniformly radiated from the carbon heater instead of the conventional sheath heater. A coated p-BN heater was used. The substrate 14 is made of MgO which is often used for forming a perovskite oxide thin film.
A single crystal substrate was used. Further, SUS310S of a high temperature specification is used for the support 15 for installing the substrate.
【００４８】図６は従来の基板設置用の支持体の表面及
び断面図である。基板支持体１５は、直径２５０ｍｍ、
厚み１０ｍｍのＳＵＳ円板に４０ｍｍ角で１ｍｍの深さ
の彫り込みが２５箇所加工された構造からなり、この彫
り込み部分にＭｇＯ基板１４を設置し、基板１４の周辺
を押さえバネで固定する。基板支持体１５は基板設置面
を下にして基板ホルダー１３にセットされるので、基板
設置面と加熱ヒーター１６によって輻射加熱される面と
は反対の面になる。従って、まず加熱ヒーター１６から
輻射によって基板支持体１５を加熱し、そして基板支持
体１５からの熱伝導によって基板１４は加熱される。FIG. 6 is a surface and cross-sectional view of a conventional support for mounting a substrate. The substrate support 15 has a diameter of 250 mm,
The SUS disk having a thickness of 10 mm has a structure in which 25 engravings of 40 mm square and 1 mm depth are machined at 25 locations. The MgO substrate 14 is placed in the engraved portion, and the periphery of the substrate 14 is fixed by a pressing spring. Since the substrate support 15 is set on the substrate holder 13 with the substrate installation surface facing down, the substrate installation surface is opposite to the surface to be radiated and heated by the heater 16. Therefore, first, the substrate support 15 is heated by radiation from the heater 16, and the substrate 14 is heated by heat conduction from the substrate support 15.
【００４９】まず最初に、このような薄膜形成装置を用
いて、ＲＦ電力＝１２００Ｗ、基板加熱温度＝６００
℃、ガス圧＝０．１５Ｐａ、Ａｒ／Ｏ2流量比＝２５／
１のスパッタ条件にてＰｂＴｉＯ3薄膜を約２μｍ程度
形成した。ここで基板は２５枚設置した。さらに、形成
したＰｂＴｉＯ3薄膜の特性評価方法としては、Ｘ線回
折法によって結晶性の評価を行った。First, using such a thin film forming apparatus, RF power = 1200 W, substrate heating temperature = 600
° C, gas pressure = 0.15 Pa, Ar / O 2 flow ratio = 25 /
Under a sputtering condition of 1, a PbTiO 3 thin film was formed to a thickness of about 2 μm. Here, 25 substrates were installed. Further, as a characteristic evaluation method of the formed PbTiO 3 thin film, the crystallinity was evaluated by an X-ray diffraction method.
【００５０】基板支持体１５の面内の各位置に設置した
基板１４上に形成したＰｂＴｉＯ3薄膜の結晶性を比較
してみると、２５枚中２２枚の基板上のＰｂＴｉＯ3薄
膜のＸ線回折パターンのＰｂＴｉＯ3ピークの半値幅は
バラツキはあるものの０．１９°〜０．２４°程度で、
さらにピーク強度は約２５０ｋｃｐｓ程度であった。し
かしながら２５枚中３枚の基板上のＰｂＴｉＯ3薄膜の
ＰｂＴｉＯ3ピークの半値幅は０．３５°で、さらにピ
ーク強度は約１８０ｋｃｐｓと他に比べて悪い結晶性と
なっていた。A comparison of the crystallinity of the PbTiO 3 thin film formed on the substrate 14 placed at each position in the plane of the substrate support 15 shows that the X-ray of the PbTiO 3 thin film on 22 out of 25 substrates The half width of the PbTiO 3 peak in the diffraction pattern is about 0.19 ° to 0.24 °, although there is variation,
Further, the peak intensity was about 250 kcps. However, the half width of the PbTiO 3 peak of the PbTiO 3 thin film on three of the 25 substrates was 0.35 °, and the peak intensity was about 180 kcps, which was worse than the others.
【００５１】基板１４を支持体１５にセットする際に、
基板１４を支持体１５の基板設置面に押さえつけるため
のばねの締め付け方が緩すぎる場合がまれにある。この
場合、支持体１５を加熱して支持体１５が局所的にそり
を生じた時に、基板１４との間に微少な浮きを生じてし
まう。この微少な浮きによって基板１４が充分に加熱さ
れなくなって、この位置にセットされた基板上の膜の特
性のみ悪くなる。この現象により、基板支持体１５の面
内で３枚のみ、形成した膜の結晶性が異なり悪くなった
と考えられる。When the substrate 14 is set on the support 15,
There are rare cases where the springs for pressing the substrate 14 against the substrate mounting surface of the support 15 are too loosely tightened. In this case, when the support 15 is heated and the support 15 is locally warped, a slight lift is generated between the support 15 and the substrate 14. The substrate 14 is not sufficiently heated by the minute floating, and only the characteristics of the film on the substrate set at this position deteriorate. It is considered that, due to this phenomenon, the crystallinity of the formed films was different and deteriorated only in three in the plane of the substrate support 15.
【００５２】そこで、仮に上記のような微少な浮きが生
じた場合にも、基板１４が受ける熱の損失を最小限にす
るために、基板１４を支持体１５に設置する面に予め皮
膜を形成した。これによって基板１４と支持体１５の間
に微少な空間が出来て、加熱が熱伝導から輻射加熱的に
なったとしても基板１４表面で反射する熱を最小限にで
きる。In order to minimize the loss of heat applied to the substrate 14 even if the above-mentioned minute floating occurs, a film is formed in advance on the surface on which the substrate 14 is mounted on the support 15. did. As a result, a minute space is formed between the substrate 14 and the support 15, and even if the heating is changed from heat conduction to radiation heating, heat reflected on the surface of the substrate 14 can be minimized.
【００５３】本実施の形態では、ＰｂＴｉＯ3薄膜を形
成する工程において、基板１４を支持体に設置する面に
皮膜を予め塗布または蒸着した後に、基板設置用の支持
体１５に基板１４を設置した。支持体１５からの熱を基
板１４に効率よく伝導させるための皮膜はＣ，Ｃｒ，Ｃ
ｕやそれらの酸化膜及び窒化膜等があるが、その材料選
択は実際使用する温度等によって使い分ける必要があ
る。In the present embodiment, in the step of forming a PbTiO 3 thin film, a film is applied or vapor-deposited in advance on a surface on which the substrate 14 is to be mounted on a support, and then the substrate 14 is mounted on the support 15 for mounting the substrate. . The film for efficiently conducting the heat from the support 15 to the substrate 14 is C, Cr, C
u, their oxide films and nitride films, etc., but the material selection must be properly selected depending on the actual use temperature and the like.
【００５４】本実施の形態では、皮膜の一例としてＮｉ
とＣｒの混合膜をコーティングした。まず最初に、カソ
ードにＮｉとＣｒ（８：２の混合比）からなるスパッタ
ターゲット１２を装着した通常のスパッタ装置を用い
て、基板１４を取り付けた支持体１５を基板ホルダー１
３に装着し、ＲＦ電力＝１５０Ｗ、基板加熱温度＝３０
０℃、ガス圧＝０．１Ｐａ、Ａｒ流量＝２０のスパッタ
条件にてＮｉＣｒ薄膜を約５μｍ程度形成した。こうし
てＮｉＣｒをコーティングした基板１４を取り出し、今
度はＮｉ−Ｃｒコーティング面を支持体１５の基板設置
面に向けてセットする。そして、支持体１５を、図５の
スパッタ装置の基板ホルダー１３に同様に基板設置面を
下にして取り付け、ＰｂＴｉＯ3薄膜を形成した。In the present embodiment, Ni is used as an example of the film.
And a mixed film of Cr. First, the support 15 on which the substrate 14 is mounted is placed on the substrate holder 1 by using a normal sputtering apparatus in which a sputtering target 12 made of Ni and Cr (mixing ratio of 8: 2) is mounted on the cathode.
3, RF power = 150 W, substrate heating temperature = 30
A NiCr thin film of about 5 μm was formed under sputtering conditions of 0 ° C., gas pressure = 0.1 Pa, and Ar flow rate = 20. The substrate 14 coated with NiCr in this manner is taken out, and this time, the Ni-Cr coated surface is set to face the substrate mounting surface of the support 15. Then, the support 15 was similarly attached to the substrate holder 13 of the sputtering apparatus shown in FIG. 5 with the substrate installation surface facing down to form a PbTiO 3 thin film.
【００５５】スパッタ条件はそれぞれ、ＲＦ電力＝１２
００Ｗ、基板加熱温度＝６００℃、ガス圧＝０．１５Ｐ
ａ、Ａｒ／Ｏ2流量比＝２５／１とし、基板１４は２５
枚セットした。さらに、形成したＰｂＴｉＯ3薄膜の特
性評価方法としては、Ｘ線回折法によって結晶性の評価
を行った。The sputtering conditions were RF power = 12, respectively.
00W, substrate heating temperature = 600 ° C, gas pressure = 0.15P
a, Ar / O 2 flow ratio = 25/1,
Set. Further, as a characteristic evaluation method of the formed PbTiO 3 thin film, the crystallinity was evaluated by an X-ray diffraction method.
【００５６】基板支持体１５の面内の各位置に設置した
基板１４上に形成したＰｂＴｉＯ3薄膜の結晶性を比較
してみると、２５枚全ての基板上のＰｂＴｉＯ3薄膜の
Ｘ線回折パターンのＰｂＴｉＯ3ピークの半値幅は０．
２０〜０．２１°程度で、さらにピーク強度は約２５０
ｋｃｐｓ程度であった。特に基板１４を支持体１５に押
さえつけるバネの強度を故意に変化させてみた場合に
も、同様の特性が得られた。A comparison of the crystallinity of the PbTiO 3 thin films formed on the substrate 14 placed at each position in the plane of the substrate support 15 shows that the X-ray diffraction patterns of the PbTiO 3 thin films on all 25 substrates The PbTiO 3 peak has a half width of 0.1.
About 20 to 0.21 °, and a peak intensity of about 250
It was about kcps. In particular, similar characteristics were obtained when the strength of the spring for pressing the substrate 14 against the support 15 was intentionally changed.
【００５７】この効果は、基板１４を支持体１５に設置
する面に予め皮膜を形成することで、基板１４と支持体
１５の間に微少な空間がある場合にも基板１４表面で反
射する熱を最小限に押さえつけられたことによるもので
ある。This effect is obtained by forming a film on the surface on which the substrate 14 is placed on the support 15 in advance, so that even if there is a small space between the substrate 14 and the support 15, the heat reflected on the surface of the substrate 14 can be obtained. This is due to minimization of
【００５８】[0058]
【発明の効果】以上説明した通り、本発明によれば、加
熱ヒーター側の表面の粗さを３〜１０μｍに加工を施し
た、あるいは熱吸収用の皮膜を基板加熱ヒーター側の表
面に塗布か蒸着した基板設置用の支持体を有する、ま
た、熱伝導率向上用の皮膜を基板設置面に塗布した基板
設置用の支持体を有した薄膜形成装置を実現したこと
で、加熱ヒーター自体の低温化を可能とし、さらに大面
積で均質に薄膜の加熱ができる。As described above, according to the present invention, the surface of the heater is processed to have a roughness of 3 to 10 μm, or a heat absorbing film is applied to the surface of the substrate heater. By realizing a thin film forming device that has a support for substrate installation with a vapor-deposited support for substrate installation and a substrate for substrate installation with a coating for improving thermal conductivity applied to the substrate installation surface, the temperature of the heater itself can be reduced. In addition, the thin film can be uniformly heated over a large area.
【００５９】また、本発明によれば、２段階以上の厚み
に加工した基板設置用支持体を有した薄膜形成装置を実
現したことで、従来より大面積で均質に薄膜の加熱がで
きる。Further, according to the present invention, a thin film forming apparatus having a substrate mounting support processed into two or more steps of thickness can be realized, so that a thin film can be more uniformly heated in a larger area than in the prior art.
【００６０】さらに、少なくともＰｂとＴｉを含むＡＢ
Ｏ3型のペロブスカイト型誘電体薄膜を形成する工程に
おいて、基板を支持体に設置する面に熱吸収用の皮膜を
予め塗布あるいは蒸着した後に、基板設置用の支持体に
基板を設置して、誘電体薄膜の形成を行ったものであ
り、従来より安定で均質な薄膜の加熱ができる。Further, AB containing at least Pb and Ti
In the step of forming an O 3 type perovskite dielectric thin film, after applying or vapor-depositing a film for heat absorption on the surface on which the substrate is to be placed on the support, the substrate is placed on the support for placing the substrate, The dielectric thin film is formed, and a stable and uniform thin film can be heated as compared with the related art.
【図１】本発明の実施の形態１の基板設置用支持体の構
成を示す図FIG. 1 is a diagram showing a configuration of a substrate installation support according to a first embodiment of the present invention.
【図２】本発明の実施の形態２の基板設置用支持体の構
成を示す図FIG. 2 is a diagram showing a configuration of a substrate installation support according to a second embodiment of the present invention.
【図３】本発明の実施の形態３の基板設置用支持体の構
成を示す図FIG. 3 is a diagram showing a configuration of a substrate installation support according to a third embodiment of the present invention.
【図４】本発明の実施の形態４の基板設置用支持体の構
成を示す図FIG. 4 is a diagram showing a configuration of a substrate installation support according to a fourth embodiment of the present invention.
【図５】従来の高周波マグネトロンスパッタ装置の基本
構成図FIG. 5 is a basic configuration diagram of a conventional high-frequency magnetron sputtering apparatus.
【図６】従来の基板設置用支持体の構成を示す図FIG. 6 is a diagram showing a configuration of a conventional support for mounting a substrate.
１１ 真空チャンバー １２ スパッタターゲット １３ 基板ホルダー １４ 基板 １５ 支持体 １６ 加熱用ヒーター １７ ロータリーポンプ １８ クライオポンプ １９ アルゴンガスボンベ ２０ 酸素ガスボンベ ２１ ＲＦ電源 ２２ ＮｉＣｒ膜 DESCRIPTION OF SYMBOLS 11 Vacuum chamber 12 Sputter target 13 Substrate holder 14 Substrate 15 Support 16 Heating heater 17 Rotary pump 18 Cryopump 19 Argon gas cylinder 20 Oxygen gas cylinder 21 RF power supply 22 NiCr film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｂ 3/00 Ｈ０１Ｂ 3/00 Ｈ 3/12 ３０２ 3/12 ３０２ (72)発明者 増谷 武 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 野村 幸治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI H01B 3/00 H01B 3/00 H 3/12 302 3/12 302 (72) Inventor Takeshi Masutani 1006 Kadoma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Koji Nomura, Inventor 1006 Oji Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.
Claims (21)
のペロブスカイト型誘電体薄膜を形成するための薄膜形
成装置において、表面の粗さを３〜１０μｍに加工した
基板設置用の支持体を有する誘電体薄膜形成装置。1. A thin film forming apparatus for forming an ABO 3 type perovskite type dielectric thin film containing at least Pb and Ti, comprising a substrate support having a surface roughness processed to 3 to 10 μm. Body thin film forming equipment.
面のみを３〜１０μｍの粗さで加工した請求項１記載の
誘電体薄膜形成装置。2. The dielectric thin film forming apparatus according to claim 1, wherein only the surface of the support for mounting the substrate on the heater side is processed to have a roughness of 3 to 10 μm.
ドブラストを用い、均一に所望の表面粗さとした基板設
置用の支持体を有した請求項１または２記載の誘電体薄
膜形成装置。3. The dielectric thin film forming apparatus according to claim 1, wherein sandblasting is used as a means for processing the surface of the support, and the support for substrate installation has a uniform surface roughness.
径を３５０〜５００μｍとして表面を加工した、基板設
置用の支持体を有する請求項３記載の誘電体薄膜形成装
置。4. The apparatus for forming a dielectric thin film according to claim 3, further comprising a support for setting a substrate, the surface of which is processed by setting the diameter of blast particles used for sandblasting to 350 to 500 μm.
のペロブスカイト型誘電体薄膜を形成するための薄膜形
成装置において、加熱ヒーターからの熱を基板設置用支
持体に効率良く吸収させるための皮膜を、加熱ヒーター
側の面に塗布または蒸着した基板設置用の支持体を有す
る誘電体薄膜形成装置。5. A thin film forming apparatus for forming an ABO 3 type perovskite type dielectric thin film containing at least Pb and Ti, wherein a film for efficiently absorbing heat from a heater to a substrate support is provided. And a dielectric thin film forming apparatus having a support for mounting a substrate, which is applied or deposited on the surface on the side of the heater.
体に効率良く吸収させるための皮膜として、Ｃｕ，Ｎ
ｉ，Ｃｒ，Ｔｉ，Ｃまたはこれらの混合膜を加熱ヒータ
ー側の面に蒸着した基板設置用の支持体を有する請求項
５記載の誘電体薄膜形成装置。6. A film for efficiently absorbing heat from a heater to a support for mounting a substrate,
6. The dielectric thin film forming apparatus according to claim 5, further comprising a substrate support for depositing i, Cr, Ti, C or a mixed film thereof on the surface of the heater.
体に効率良く吸収させるための皮膜として、Ｃｕ，Ｎ
ｉ，Ｃｒ，Ｔｉ，Ｃ，Ｂの酸化膜あるいは窒化膜を加熱
ヒーター側の面に蒸着した基板設置用の支持体を有する
請求項５記載の誘電体薄膜形成装置。7. A film for efficiently absorbing heat from a heater to a substrate-mounting support, such as Cu, N
6. The dielectric thin film forming apparatus according to claim 5, further comprising a support for mounting a substrate, wherein an oxide film or a nitride film of i, Cr, Ti, C, B is deposited on a surface on a heater side.
体に効率良く吸収させるための皮膜として特に、Ｎｉと
Ｃｒの混合膜を加熱ヒーター側の面に蒸着した基板設置
用の支持体を有する請求項５記載の誘電体薄膜形成装
置。8. A film for efficiently absorbing heat from the heater to the substrate-mounting support, particularly a substrate-mounting support having a mixed film of Ni and Cr deposited on the heater-side surface. An apparatus for forming a dielectric thin film according to claim 5.
に蒸着した基板設置用の支持体を有する請求項８記載の
誘電体薄膜形成装置。9. The apparatus for forming a dielectric thin film according to claim 8, further comprising a support for mounting the substrate, which is vapor-deposited on the surface at a mixing ratio of Ni and Cr of 8: 2.
型のペロブスカイト型誘電体薄膜を形成するための誘電
体薄膜形成装置において、基板設置用支持体から基板へ
の熱伝導率を向上させるために、基板設置面に皮膜を塗
布または蒸着した支持体を有する誘電体薄膜形成装置。10. ABO 3 containing at least Pb and Ti
In a dielectric thin film forming apparatus for forming a perovskite type dielectric thin film of a type, in order to improve the thermal conductivity from the support for substrate installation to the substrate, a support on which a film is applied or vapor-deposited on the substrate installation surface is used. And a dielectric thin film forming apparatus.
率を向上させるための皮膜として、Ｃｕ，Ｎｉ，Ｃｒ，
Ｔｉ，Ｃまたはこれらの混合膜を基板設置面に蒸着した
基板設置用の支持体を有する請求項１０記載の誘電体薄
膜形成装置。11. A film for improving thermal conductivity from a substrate for supporting a substrate to a substrate, wherein Cu, Ni, Cr,
The dielectric thin film forming apparatus according to claim 10, further comprising: a support for mounting the substrate on which a film of Ti, C, or a mixture thereof is vapor-deposited.
率を向上させるための皮膜として、Ｃｕ，Ｎｉ，Ｃｒ，
Ｔｉ，Ｃ，Ｂの酸化膜あるいは窒化膜を基板設置面に蒸
着した基板設置用の支持体を有する請求項１０記載の誘
電体薄膜形成装置。12. A film for improving the thermal conductivity from the substrate support to the substrate, wherein Cu, Ni, Cr,
The dielectric thin film forming apparatus according to claim 10, further comprising a substrate support for depositing an oxide film or a nitride film of Ti, C, or B on the substrate installation surface.
率を向上させるための皮膜として特に、ＮｉとＣｒの混
合膜を基板設置面に蒸着した基板設置用の支持体を有す
る請求項１０記載の誘電体薄膜形成装置。13. A substrate for mounting a substrate, wherein a mixed film of Ni and Cr is vapor-deposited on the substrate mounting surface as a film for improving the thermal conductivity from the substrate mounting support to the substrate. The dielectric thin film forming apparatus according to the above.
板設置面に蒸着した基板設置用の支持体を有する請求項
１３記載の誘電体薄膜形成装置。14. The dielectric thin film forming apparatus according to claim 13, further comprising a support for mounting the substrate, which is deposited on the substrate mounting surface at a mixing ratio of Ni and Cr of 8: 2.
型のペロブスカイト型誘電体薄膜を形成するための薄膜
形成装置において、厚みを２段階以上とした基板設置用
支持体を有する誘電体薄膜形成装置。15. ABO 3 containing at least Pb and Ti
A thin film forming apparatus for forming a perovskite-type dielectric thin film, comprising: a substrate-installing support having two or more thicknesses.
中心から外周に向かうに従い段階的に厚みが薄くなった
基板設置用支持体を有する請求項１５記載の誘電体薄膜
形成装置。16. The apparatus for forming a dielectric thin film according to claim 15, wherein the substrate installation support has a substrate installation support whose thickness decreases stepwise from the center to the outer periphery of the support.
型のペロブスカイト型誘電体薄膜を形成する工程におい
て、基板設置用支持体から基板への熱伝導率を向上させ
るために、基板を支持体に設置する面に皮膜を予め塗布
または蒸着した後に、基板設置用の支持体に基板を設置
する事からなる誘電体薄膜の形成方法。17. ABO 3 containing at least Pb and Ti
In the step of forming a perovskite-type dielectric thin film of the mold, in order to improve the thermal conductivity from the support for substrate installation to the substrate, after previously applying or vapor-depositing a film on the surface on which the substrate is installed on the support, the substrate A method for forming a dielectric thin film, which comprises mounting a substrate on a mounting support.
率を向上させるための皮膜として、基板を支持体に設置
する面にＣｕ，Ｎｉ，Ｃｒ，Ｔｉ，Ｃまたはこれらの混
合膜を予め蒸着した後に、基板設置用の支持体に基板を
設置する事からなる請求項１７記載の誘電体薄膜の形成
方法。18. A film for improving the thermal conductivity from the substrate-mounting support to the substrate, wherein Cu, Ni, Cr, Ti, C or a mixed film thereof is previously coated on the surface on which the substrate is to be mounted on the support. 18. The method for forming a dielectric thin film according to claim 17, wherein the substrate is placed on a support for placing the substrate after the vapor deposition.
率を向上させるための皮膜として、基板を支持体に設置
する面にＣｕ，Ｎｉ，Ｃｒ，Ｔｉ，Ｃ，Ｂの酸化膜ある
いは窒化膜を予め蒸着した後に、基板設置用の支持体に
基板を設置する事からなる請求項１７記載の誘電体薄膜
の形成方法。19. A film for improving the thermal conductivity from the support for substrate installation to the substrate, an oxide film or a nitride of Cu, Ni, Cr, Ti, C, B on the surface on which the substrate is installed on the support. 18. The method for forming a dielectric thin film according to claim 17, comprising, after depositing the film in advance, mounting the substrate on a support for mounting the substrate.
率を向上させるための皮膜として特に、基板を支持体に
設置する面にＮｉとＣｒの混合膜を予め蒸着した後に、
基板設置用の支持体に基板を設置する事からなる請求項
１７記載の誘電体薄膜の形成方法。20. A film for improving the thermal conductivity from the substrate-mounting support to the substrate, in particular, after previously depositing a mixed film of Ni and Cr on the surface where the substrate is to be mounted on the support,
18. The method for forming a dielectric thin film according to claim 17, comprising mounting the substrate on a support for mounting the substrate.
板を支持体に設置する面に予め蒸着した後に、基板設置
用の支持体に基板を設置する事からなる請求項２０記載
の誘電体薄膜の形成方法。21. The dielectric according to claim 20, wherein the substrate is placed on a support for mounting the substrate after vapor deposition is previously performed on the surface on which the substrate is placed on the support with the mixture ratio of Ni and Cr being 8: 2. Method of forming body thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14388798A JPH11335834A (en) | 1998-05-26 | 1998-05-26 | Dielectric thin film forming device and formation of dielectric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14388798A JPH11335834A (en) | 1998-05-26 | 1998-05-26 | Dielectric thin film forming device and formation of dielectric thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11335834A true JPH11335834A (en) | 1999-12-07 |
Family
ID=15349350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14388798A Withdrawn JPH11335834A (en) | 1998-05-26 | 1998-05-26 | Dielectric thin film forming device and formation of dielectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11335834A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009155722A (en) * | 2007-12-05 | 2009-07-16 | Hitachi Metals Ltd | Ni-W BASED SINTERED TARGET MATERIAL |
| JP2011144422A (en) * | 2010-01-14 | 2011-07-28 | Showa Denko Kk | Sputtering apparatus, and method for manufacturing semi-conductor light emitting element |
-
1998
- 1998-05-26 JP JP14388798A patent/JPH11335834A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009155722A (en) * | 2007-12-05 | 2009-07-16 | Hitachi Metals Ltd | Ni-W BASED SINTERED TARGET MATERIAL |
| JP2011144422A (en) * | 2010-01-14 | 2011-07-28 | Showa Denko Kk | Sputtering apparatus, and method for manufacturing semi-conductor light emitting element |
| US8882971B2 (en) | 2010-01-14 | 2014-11-11 | Toyoda Gosei Co., Ltd. | Sputtering apparatus and manufacturing method of semiconductor light-emitting element |
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