JPH11329836A - Switch coupling film, magnetic sensor, magnetic recording head and medium - Google Patents
Switch coupling film, magnetic sensor, magnetic recording head and mediumInfo
- Publication number
- JPH11329836A JPH11329836A JP7117199A JP7117199A JPH11329836A JP H11329836 A JPH11329836 A JP H11329836A JP 7117199 A JP7117199 A JP 7117199A JP 7117199 A JP7117199 A JP 7117199A JP H11329836 A JPH11329836 A JP H11329836A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- ferromagnetic
- antiferromagnetic
- exchange coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Magnetic Heads (AREA)
- Power Engineering (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、交換結合膜、磁気
センサ、磁気記録ヘッド、及び磁気記録媒体に関する。[0001] The present invention relates to an exchange coupling film, a magnetic sensor, a magnetic recording head, and a magnetic recording medium.
【０００２】[0002]
【従来の技術】ハードディスク装置などの磁気記録装置
は、近年において急速に小型化・高密度化が進んでお
り、今後さらに高密度化されることが見込まれている。
磁気記録において高密度化を実現するには、記録トラッ
ク幅を狭くして記録トラック密度を高くするとともに、
長手方向の記録密度、即ち線記録密度を高める必要があ
る。2. Description of the Related Art In recent years, magnetic recording devices such as hard disk devices have been rapidly reduced in size and density, and it is expected that the density will be further increased in the future.
To achieve higher density in magnetic recording, the recording track width must be narrowed to increase the recording track density,
It is necessary to increase the recording density in the longitudinal direction, that is, the linear recording density.
【０００３】記録トラック幅が狭くなり、記録された磁
化の大きさが小さくなっても、十分な再生信号出力が得
られるよう、磁気抵抗効果（ＡＭＲ）を用いた磁気抵抗
効果再生ヘッドやＡＭＲ膜よりも再生感度の高い巨大磁
気抵抗効果（ＧＭＲ）を利用したスピンバルブ型再生Ｇ
ＭＲヘッドが用いられるようになり、さらに高い再生感
度の期待されるトンネル磁気抵抗効果（ＴＭＲ）膜の研
究が進められている。[0003] A magneto-resistive effect reproducing head using the magneto-resistive effect (AMR) or an AMR film so that a sufficient reproduction signal output can be obtained even when the recording track width is reduced and the magnitude of the recorded magnetization is reduced. -Valve type reproduction G using giant magnetoresistance effect (GMR) with higher reproduction sensitivity
With the use of MR heads, research on a tunnel magnetoresistive (TMR) film, which is expected to have higher reproduction sensitivity, is being conducted.
【０００４】このように再生感度の高い再生磁気ヘッド
が開発され、それらを用いることによって、ごく狭い記
録トラック幅であっても記録信号の再生が可能になって
きた。また、記録トラックの長手方向の密度である線記
録密度を高めるには、磁気再生ヘッドのギャップ長を狭
くすることが必要である。従来の磁気抵抗効果ヘッドで
は、媒体対向面に磁気抵抗効果膜が位置することから、
この膜厚分に相当するギャップ長が存在しているため、
さらなる狭ギャップ化には充分に対応できないと予測で
きる。そこで、媒体対向面の磁気ギャップ内には磁気抵
抗効果素子を後方に配置し、その分ヘッドキャップを狭
め、記録磁化からの磁束をヘッドギャップ部より取り込
み後方に配置した磁気抵抗効果素子に導く磁心（磁気ヨ
ーク）を採用したヨーク型の磁気抵抗効果型磁気ヘッド
が望まれる。このヨーク型磁気ヘッドであればヘッドギ
ャップ長をさらに狭くできるので、再生の分解能が向上
し、高い線記録密度に対応できると期待される。又、特
開平１０−１４３８２１号には、この磁気ヨークを薄膜
で構成し平面配置した磁気ヘッドが開示されている。As described above, reproducing magnetic heads having high reproducing sensitivity have been developed, and by using them, it has become possible to reproduce recorded signals even with a very narrow recording track width. Further, in order to increase the linear recording density, which is the density in the longitudinal direction of the recording track, it is necessary to reduce the gap length of the magnetic reproducing head. In the conventional magnetoresistive head, since the magnetoresistive film is located on the medium facing surface,
Since there is a gap length corresponding to this film thickness,
It can be predicted that it is not possible to sufficiently cope with further narrowing of the gap. Therefore, the magnetoresistive effect element is disposed rearward in the magnetic gap on the medium facing surface, the head cap is narrowed accordingly, and the magnetic flux from the recording magnetization is taken in from the head gap portion and guided to the magnetoresistive effect element disposed rearward. A yoke-type magnetoresistive head using (magnetic yoke) is desired. With this yoke type magnetic head, the head gap length can be further reduced, so that it is expected that the resolution of reproduction will be improved and that a higher linear recording density can be accommodated. Japanese Patent Application Laid-Open No. H10-143821 discloses a magnetic head in which the magnetic yoke is formed of a thin film and arranged in a plane.
【０００５】このヘッド構造は、それ以前の、磁気ヨー
クをギャップ膜を介して上下に積層形成したヨーク型ヘ
ッド構造と対象的に一対の磁気ヨークが平面に位置する
ことから、以下では平面ヨーク型磁気ヘッドとする。平
面ヨーク型磁気ヘッドの斜視図を図１７に示す。ＴｉＣ
基板２１上にはＡｌ2 Ｏ3 膜２２が形成され、このＡｌ
２Ｏ３膜２２の上に一対の磁気ヨーク２４が形成されて
いる。一対の磁気ヨーク２４は媒体対向面において磁気
ギャップ２５を介して対向しており、一対の磁気ヨーク
２４は磁気抵抗効果膜２７と磁気的に結合し電極３０か
らのセンス電流を受けるように構成されている。このよ
うな構成により、一対の磁気ヨーク２４の距離で決まる
ギャップ長を狭く、かつ、磁気ヨーク２４の膜厚で決ま
るトラック幅を狭くできることから、この平面ヨーク型
磁気ヘッドはさらなる高密度化に対応可能である。In this head structure, a pair of magnetic yokes are located on a plane in contrast to a yoke type head structure in which magnetic yokes are vertically stacked with a gap film interposed therebetween. It is a magnetic head. FIG. 17 is a perspective view of a plane yoke type magnetic head. TiC
An Al 2 O 3 film 22 is formed on a substrate 21.
A pair of magnetic yokes 24 are formed on the 2O3 film 22. The pair of magnetic yokes 24 oppose each other via a magnetic gap 25 on the medium facing surface, and the pair of magnetic yokes 24 are magnetically coupled to the magnetoresistive film 27 and receive a sense current from the electrode 30. ing. With such a configuration, the gap length determined by the distance between the pair of magnetic yokes 24 and the track width determined by the film thickness of the magnetic yokes 24 can be narrowed. It is possible.
【０００６】[0006]
【発明が解決しようとする課題】上述のような磁心に対
し、大きな磁壁の不可逆的移動に起因する不連続磁化変
化を低減することでバルクハウゼンノイズを低減させ、
信頼性が高く、安定した特性を示す磁心とこれを用いた
磁気センサ、磁気ヘッド、及び磁気記録媒体を得ること
が本発明の解決しようとする課題である。With respect to the above-described magnetic core, Barkhausen noise is reduced by reducing discontinuous magnetization change caused by irreversible movement of a large domain wall.
It is an object of the present invention to obtain a magnetic core having high reliability and stable characteristics, and a magnetic sensor, a magnetic head, and a magnetic recording medium using the same.
【０００７】[0007]
【課題を解決するための手段】本発明者らは、鋭意研究
の結果、反強磁性膜とその部分領域毎に交換結合した強
磁性膜を磁心として用いることで、バルクハウゼンノイ
ズを低減し高い透磁率が得られることを見出し、本発明
をなすに至ったものである。Means for Solving the Problems As a result of intensive research, the present inventors have reduced the Barkhausen noise by using an antiferromagnetic film and a ferromagnetic film exchange-coupled for each partial region as a magnetic core. The inventors have found that a magnetic permeability can be obtained, and have accomplished the present invention.
【０００８】以下に、図１７に示す、従来のヨーク型磁
気ヘッドの問題点を平面ヨーク型磁気ヘッドを例に説明
する。図１７にあるように、磁気ヨーク２４は媒体対向
面において磁気媒体から拾った信号磁界（磁化反転）を
円滑に磁気抵抗効果膜２７に伝える必要がある。理想的
な磁化反転は磁気ヨーク２４全体の磁化が一度に反転す
ることであるが、実際には、磁気ヨーク２４内を磁壁が
不可逆的に移動するため、磁壁が大きいとその大きさに
比例したノイズを生じる。従来の磁気ヨークはこのよう
なノイズを低減するために、磁気ヨーク２４を単一磁区
に保つ工夫、あるいは特開平９−２７４７１２号にある
ような磁気ヨークの長手方向とは垂直方向に磁気異方性
を付与する工夫がなされてきた。図１８は、面積が２０
０μｍ×２００μｍ程度の磁気ヨーク２４を単一磁区に
保つためのバイアス磁界を付与した膜の磁区を示す。Hereinafter, problems of the conventional yoke type magnetic head shown in FIG. 17 will be described by taking a plane yoke type magnetic head as an example. As shown in FIG. 17, it is necessary for the magnetic yoke 24 to smoothly transmit a signal magnetic field (magnetization reversal) picked up from a magnetic medium on the medium facing surface to the magnetoresistive film 27. The ideal magnetization reversal is that the magnetization of the entire magnetic yoke 24 is reversed at one time. However, in practice, the domain wall moves irreversibly in the magnetic yoke 24. Generates noise. In order to reduce such noise, a conventional magnetic yoke is designed to keep the magnetic yoke 24 in a single magnetic domain, or a magnetic anisotropy perpendicular to the longitudinal direction of the magnetic yoke as disclosed in JP-A-9-274712. Some devices have been devised to impart properties. FIG. 18 shows that the area is 20
A magnetic domain of a film to which a bias magnetic field for maintaining a magnetic yoke 24 of about 0 μm × 200 μm as a single magnetic domain is applied is shown.
【０００９】バイアス磁界を付与するものの、膜２４内
には互いに反平行の磁化Ｍを備える磁区が形成され、磁
区間には磁壁３６が形成され、媒体からの信号磁界が加
わったときにこの磁壁３６が不可逆的に移動する。この
結果、図１９に示す膜２４の磁界（Ｈ）−磁化（Ｍ）変
化にあるような不連続な磁化変化が生じる。この不連続
な磁化変化を受けた磁気抵抗効果膜２７の再生信号には
ノイズが現れ、磁気ヘッドを実用化する上での大きな障
害となる。また、特開平９−２７４７１２号にあるよう
に、磁気ヨーク２４にじき異方性を付与する方法では磁
束を膜面内で急激に曲げることが難しく、安定して供給
することは困難であることが明らかになった。Although a bias magnetic field is applied, magnetic domains having magnetizations M which are antiparallel to each other are formed in the film 24, and a magnetic domain wall 36 is formed in the magnetic domain, and when a signal magnetic field from a medium is applied, the magnetic domain wall is formed. 36 moves irreversibly. As a result, a discontinuous change in magnetization occurs as in the change in magnetic field (H) -magnetization (M) of the film 24 shown in FIG. Noise appears in the reproduction signal of the magnetoresistive film 27 that has undergone the discontinuous change in magnetization, which is a major obstacle in putting the magnetic head into practical use. Also, as disclosed in Japanese Patent Application Laid-Open No. 9-274712, it is difficult to sharply bend the magnetic flux in the film plane and to supply the magnetic flux stably in the method of imparting anisotropy to the magnetic yoke 24. Was revealed.
【００１０】上述のバルクハウゼンノイズは磁化反転の
不連続性がノイズとして現れることから、磁気ヨークの
サイズが関係する。つまり、２００μｍ×２００μｍ程
度の面積をもつ磁気ヨークのバルクハウゼンノイズは、
磁区を小さくし大きい磁壁による不連続な移動を抑える
ことにより解決できることを本発明者らは鋭意研究の結
果、見出した。In the Barkhausen noise described above, discontinuity of magnetization reversal appears as noise, so that the size of the magnetic yoke is related. That is, Barkhausen noise of a magnetic yoke having an area of about 200 μm × 200 μm is
The present inventors have found, as a result of earnest research, that this problem can be solved by reducing the magnetic domain and suppressing discontinuous movement due to a large domain wall.
【００１１】本発明の第一は、積層形成された強磁性膜
と反強磁性膜とからなり、前記強磁性膜が磁化方向の異
なる複数の部分領域を備えることで前記強磁性膜が異方
性分散した磁化を持つことを特徴とする交換結合膜を提
供する。In the first aspect of the present invention, the ferromagnetic film is composed of a laminated ferromagnetic film and an antiferromagnetic film, and the ferromagnetic film is provided with a plurality of partial regions having different magnetization directions. Provided is an exchange-coupling film characterized by having chromatic dispersion.
【００１２】又、本発明の第二は、積層形成された強磁
性膜と反強磁性膜とからなり、前記強磁性膜が磁化方向
の異なる複数の部分領域を備えることで前記強磁性膜が
異方性分散した磁化を持つ磁心と、この磁心に磁気的に
結合した磁気抵抗効果膜とを備えることを特徴とする磁
気センサを提供する。A second aspect of the present invention is that the ferromagnetic film comprises a laminated ferromagnetic film and an antiferromagnetic film, and the ferromagnetic film includes a plurality of partial regions having different magnetization directions. A magnetic sensor comprising a magnetic core having anisotropically dispersed magnetization and a magnetoresistive film magnetically coupled to the magnetic core.
【００１３】又、本発明の第三は、磁気記録媒体に対向
する媒体対向面において磁気ギャップを介して対向する
一対の磁心であって、積層形成された強磁性膜と反強磁
性膜とからなり、前記強磁性膜が磁化方向の異なる複数
の部分領域を備えることで前記強磁性膜が異方性分散し
た磁化を持つ一対の磁心と、媒体対向面より後方に位置
し、前記磁心に電流磁界を付与するコイルとを備えるこ
とを特徴とする磁気記録ヘッドを提供する。A third aspect of the present invention is a pair of magnetic cores facing each other via a magnetic gap at a medium facing surface facing a magnetic recording medium, and includes a laminated ferromagnetic film and an antiferromagnetic film. Since the ferromagnetic film includes a plurality of partial regions having different magnetization directions, the ferromagnetic film is positioned behind a pair of magnetic cores having anisotropically dispersed magnetization and a medium facing surface. And a coil for applying a magnetic field.
【００１４】さらに、本発明の第四は、積層形成された
強磁性膜と反強磁性膜とからなり、前記強磁性膜が表面
側に位置し、前記強磁性膜が磁化方向の異なる複数の部
分領域を備えることで前記強磁性膜が異方性分散した磁
化を持つ一対の交換結合膜を備えることを特徴とする磁
気記録媒体を提供する。Further, a fourth aspect of the present invention is that a ferromagnetic film and an antiferromagnetic film are formed by lamination, wherein the ferromagnetic film is located on the front side, and the ferromagnetic film has a plurality of magnetization directions different from each other. A magnetic recording medium is provided, wherein the ferromagnetic film includes a pair of exchange-coupling films having magnetization anisotropically dispersed by providing a partial region.
【００１５】上記各発明の交換結合膜、及びこれを用い
た磁心では、磁化方向の異なる複数の部分領域を強磁性
膜が備えることで、強磁性膜全体としては、磁気異方性
が分散した等方膜となる。ここで、異方性分散とは、日
本応用磁気学会誌 vol.20,No.2 1996 P493-496 にある
ように、磁気異方性に角度、大きさ共に膜内で不均一性
を生じることをいう。In the exchange-coupling film and the magnetic core using the same, the ferromagnetic film has a plurality of partial regions having different magnetization directions, so that the magnetic anisotropy is dispersed throughout the ferromagnetic film. It becomes an isotropic film. Here, anisotropic dispersion refers to the generation of non-uniformity in magnetic anisotropy in both the angle and size in the film, as described in the Journal of the Japan Society of Applied Magnetics vol.20, No.2 1996 P493-496. Say.
【００１６】より具体的には、図１の斜視図に示す反強
磁性膜４２と強磁性膜４３が互いに積層された交換結合
膜４５の強磁性膜４３は、図２の斜視図に示すように矢
印で示す磁化（異方性磁界）の向き互いに異なる部分領
域４３ａを備え、膜全体ではその異方性磁界が略均等に
分布して結果的に異方性分散をもつこととなる。図２
中、協磁性膜４３の部分領域４３ａは対応する反強磁性
膜４２の部分領域４２ａとの交換結合により外部磁界が
０のときには矢印で示す磁化を維持することができる。
図２中、４６は部分領域を分ける境界である。More specifically, the ferromagnetic film 43 of the exchange coupling film 45 in which the antiferromagnetic film 42 and the ferromagnetic film 43 shown in the perspective view of FIG. 1 are laminated on each other is as shown in the perspective view of FIG. The partial film 43a has different directions of magnetization (anisotropic magnetic field) indicated by arrows in FIG. 3, and the anisotropic magnetic field is distributed substantially uniformly in the entire film, resulting in anisotropic dispersion. FIG.
In the middle, the partial region 43a of the co-magnetic film 43 can maintain the magnetization indicated by the arrow when the external magnetic field is 0 due to exchange coupling with the corresponding partial region 42a of the antiferromagnetic film 42.
In FIG. 2, reference numeral 46 denotes a boundary for dividing a partial area.
【００１７】尚、本発明の交換結合膜は、インダクタ
ー、Ｄ／Ｄインバーター、電源、ノイズフィルター等の
従来より強磁性膜を磁心として用いる装置に適用するこ
とができる。The exchange-coupling film of the present invention can be applied to an apparatus using a conventional ferromagnetic film as a magnetic core, such as an inductor, a D / D inverter, a power supply, and a noise filter.
【００１８】本発明の交換結合膜によれば、膜内に細か
い部分領域４３ａを備えることから、外部磁界に応じた
磁化変化は、多数の部分領域４３ａに相当する磁区の磁
化が一度に反転していた従来の膜よりも格段にスムーズ
に行われ、バルクハウゼンノイズを抑制することが可能
である。この結果、低ノイズの磁心を得ることが可能で
ある。また、部分領域４３ａは、異方性磁界の向きを分
散させることで磁心の透磁率を略等方的にすることがで
き、閉磁路を形成した場合に非常に有効である。According to the exchange-coupling film of the present invention, since a fine partial region 43a is provided in the film, the magnetization change according to the external magnetic field causes the magnetization of the magnetic domains corresponding to the large number of partial regions 43a to be reversed at a time. It is performed much more smoothly than the conventional film, and Barkhausen noise can be suppressed. As a result, it is possible to obtain a low-noise magnetic core. The partial region 43a can make the permeability of the magnetic core substantially isotropic by dispersing the direction of the anisotropic magnetic field, and is very effective when a closed magnetic circuit is formed.
【００１９】本発明の第二乃び第三に関る磁気センサ、
及び磁気抵抗効果型磁気ヘッドによれば、磁気ヨークと
して、本発明の第一の交換結合膜を用いているので、強
磁性膜の磁化が拘束され、これによって強磁性膜の磁壁
移動を抑制することができる。このため、磁壁が不可逆
的移動することに原因する大きなバルクハウゼンノイズ
を抑制することができる。この結果、ヘッドギャップを
十分に小さくできるヨーク型の磁気抵抗効果型磁気ヘッ
ドの信号対雑音比が向上し、高い線記録密度に対応でき
る。また、高透磁率を誇ることから、記録効率に優れた
磁気記録ヘッドを提供することができる。A magnetic sensor according to the second and third aspects of the present invention;
According to the magnetoresistive head, since the first exchange-coupling film of the present invention is used as the magnetic yoke, the magnetization of the ferromagnetic film is constrained, thereby suppressing the domain wall movement of the ferromagnetic film. be able to. Therefore, large Barkhausen noise caused by irreversible movement of the domain wall can be suppressed. As a result, the signal-to-noise ratio of the yoke-type magnetoresistive head capable of sufficiently reducing the head gap is improved, and high linear recording density can be accommodated. Further, since the magnetic recording head boasts a high magnetic permeability, a magnetic recording head having excellent recording efficiency can be provided.
【００２０】本発明の第四の磁気記録媒体では、記録層
のヘッド対向面とは反対側の記録層裏面に本発明の第一
の等方的で軟磁性の交換結合膜を備えることで記録ヘッ
ドからの記録磁束を効率よく収束することが可能とな
る。In the fourth magnetic recording medium of the present invention, recording is performed by providing the first isotropic soft magnetic exchange coupling film of the present invention on the back surface of the recording layer opposite to the head-facing surface of the recording layer. It is possible to efficiently converge the recording magnetic flux from the head.
【００２１】尚、上記本発明の第一乃至第四の交換結合
膜において下記の形態とすることが好ましい。 １）強磁性膜の一表面の全面積を１００とすると、部分
領域の面積は１０以下である。より好ましくは、２００
μｍ×２００μｍ程度の面積を備える交換結合膜におい
て、部分領域の磁区の大きさを５μｍ×５μｍ程度また
はそれ以下に微細化すること。The first to fourth exchange coupling membranes of the present invention preferably have the following forms. 1) Assuming that the total area of one surface of the ferromagnetic film is 100, the area of the partial region is 10 or less. More preferably, 200
In an exchange-coupling film having an area of about 200 μm × 200 μm, the size of the magnetic domain in the partial region is reduced to about 5 μm × 5 μm or less.
【００２２】２）交換結合膜の透磁率の方向に依存した
変化率は±１０％以内であること。 ３）強磁性膜は、軟磁性膜、非晶質Ｃｏ系膜、軟磁性微
結晶膜、グラニュラー軟磁性膜、及び軟磁性フェライト
膜のいずれかを含むこと。2) The rate of change depending on the direction of the magnetic permeability of the exchange coupling film is within ± 10%. 3) The ferromagnetic film includes any of a soft magnetic film, an amorphous Co-based film, a soft magnetic microcrystalline film, a granular soft magnetic film, and a soft magnetic ferrite film.
【００２３】４）反強磁性膜はＩｒＭｎ、ＰｄＭｎ、Ｐ
ｔＭｎ、ＮｉＭｎ、ＮｉＯ、アモルファスＦｅ2 Ｏ3 の
いずれかを含むこと。 ５）強磁性膜はＮｉＦｅあるいはＣｏＺｒＮｂを含み、
反強磁性膜はＩｒＭｎ，ＰｔＭｎあるいはＮｉＭｎを含
むこと。4) The antiferromagnetic film is made of IrMn, PdMn, P
Including any of tMn, NiMn, NiO, and amorphous Fe 2 O 3 . 5) The ferromagnetic film contains NiFe or CoZrNb,
The antiferromagnetic film contains IrMn, PtMn or NiMn.
【００２４】６）強磁性膜は軟磁性グラニュラー材料、
あるいは軟磁性フェライトを含み、反強磁性膜はアモル
ファスＦｅ2 Ｏ3 を含むこと。 ７）反強磁性膜は第二の強磁性膜を備え、反強磁性膜は
二つの強磁性膜の間に位置する。6) The ferromagnetic film is a soft magnetic granular material,
Alternatively, soft magnetic ferrite is contained, and the antiferromagnetic film contains amorphous Fe 2 O 3 . 7) The antiferromagnetic film includes a second ferromagnetic film, and the antiferromagnetic film is located between the two ferromagnetic films.
【００２５】８）交換結合膜は互い違いに積層形成され
た複数の強磁性膜と反強磁性膜を備える。 ９）強磁性膜と反強磁性膜とが組をなし、別の強磁性膜
と反強磁性膜からなる組と非磁性膜を介して隣接してい
ること。8) The exchange coupling film includes a plurality of ferromagnetic films and antiferromagnetic films alternately formed. 9) A ferromagnetic film and an antiferromagnetic film form a set, and are adjacent to another set of a ferromagnetic film and an antiferromagnetic film via a nonmagnetic film.
【００２６】１０）強磁性膜は良好な軟磁気特性（以
下、軟磁性とする。）を示すものが好ましく、例えば、
ＮｉＦｅ，ＦｅＡｌＳｉ、ＣｏＺｒＮｂ等のＣｏ系アモ
ルファス材料、ＦｅＺｒＮ等の微結晶軟磁性膜、ＣｏＦ
ｅＡｌＯ等のグラニュラー軟磁性膜、ＭｎＺｎフェライ
ト等の軟磁性フェライト膜がある。10) The ferromagnetic film preferably has good soft magnetic properties (hereinafter referred to as soft magnetism).
Co-based amorphous material such as NiFe, FeAlSi, CoZrNb, microcrystalline soft magnetic film such as FeZrN, CoF
There are granular soft magnetic films such as eAlO and soft magnetic ferrite films such as MnZn ferrite.
【００２７】１１）反強磁性膜としては、ＦｅＭｎ、Ｉ
ｒＭｎ、ＰｔＭｎ、ＮｉＭｎ、ＮｉＯ、アモルファスＦ
ｅ2 Ｏ3 等を用いることができる。 １２）反強磁性膜と強磁性膜の好ましい組み合わせとし
ては、交換結合力の大きいＩｒＭｎ、ＰｔＭｎ，ＮｉＭ
ｎと優れた軟磁性を持ち、磁気異方性を導入しやすいＮ
ｉＦｅ，ＣｏＺｒＮｂがよい。11) FeMn, I
rMn, PtMn, NiMn, NiO, amorphous F
e 2 O 3 or the like can be used. 12) As a preferable combination of the antiferromagnetic film and the ferromagnetic film, IrMn, PtMn, NiM
N with excellent soft magnetism and easy to introduce magnetic anisotropy
iFe and CoZrNb are preferred.
【００２８】１３）高飽和磁束密度が望まれる場合に
は、上述の交換結合力の高い反強磁性膜とＦｅＺｒＮあ
るいはＣｏＦｅＡｌＯの強磁性膜との組み合わせが好ま
しい。 １４）さらに、高周波特性が望まれる場合には、交換結
合力の大きい反強磁性膜とＣｏＦｅＡｌＯ等のグラニュ
ラー軟磁性膜やＭｎＺｎフェライト等の軟磁性フェライ
ト膜を組み合わせるとよい。その際、反強磁性膜として
ＮｉＯ、アモルファスＦｅ2 Ｏ3 等を用いれば高周波特
性はさらに改善される。13) When a high saturation magnetic flux density is desired, a combination of the above-described antiferromagnetic film having a high exchange coupling force and a ferromagnetic film of FeZrN or CoFeAlO is preferable. 14) When high frequency characteristics are desired, an antiferromagnetic film having a large exchange coupling force may be combined with a granular soft magnetic film such as CoFeAlO or a soft magnetic ferrite film such as MnZn ferrite. At this time, if NiO, amorphous Fe 2 O 3 or the like is used as the antiferromagnetic film, the high frequency characteristics are further improved.
【００２９】また、本発明の磁気センサ及び磁気抵抗効
果型再生ヘッドにおいて、下記の形態をとることが好ま
しい。 １）磁気ギャップは、前記磁気ヨークおよび前記磁気抵
抗効果素子が形成される基板面に対して略垂直方向に配
置されているとともに、磁気ヨークは前記基板面に対し
て略平行な平面を有し、かつ磁気抵抗効果素子が平面に
沿って形成されてなるものとする。The magnetic sensor and the magnetoresistive read head of the present invention preferably have the following configurations. 1) The magnetic gap is arranged in a direction substantially perpendicular to the substrate surface on which the magnetic yoke and the magnetoresistive element are formed, and the magnetic yoke has a plane substantially parallel to the substrate surface. The magnetoresistive element is formed along a plane.
【００３０】２）磁気抵抗効果素子としては、ＡＭＲ膜
を用いるＡＭＲ素子、ＧＭＲ膜を用いるＧＭＲ素子及び
ＴＭＲ膜を用いるＴＭＲ素子のいずれもが使用できる。
中でも高い再生感度を持つＧＭＲ素子、ＴＭＲ素子が好
ましい。2) As the magnetoresistance effect element, any of an AMR element using an AMR film, a GMR element using a GMR film, and a TMR element using a TMR film can be used.
Among them, GMR elements and TMR elements having high reproduction sensitivity are preferable.
【００３１】本発明の第一乃至第四に関る交換結合膜
は、基板上に反強磁性膜と強磁性膜上とを積層して成膜
することにより反強磁性膜と強磁性膜とが交換結合を有
する多層膜を製造する交換結合膜の製造方法において、
積層成膜を時間的に変化する磁場中にて行うことで製造
することができる。ここで基板上に反強磁性膜と強磁性
膜上とを成膜する順序は反強磁性膜を先に成膜し、これ
に強磁性膜を成膜する順序で行ってもよいし、強磁性膜
を先に成膜し、これに反強磁性膜を成膜する順序で行っ
てもよい。The exchange coupling film according to the first to fourth aspects of the present invention is formed by stacking an antiferromagnetic film and a ferromagnetic film on a substrate to form an antiferromagnetic film and a ferromagnetic film. In a method for producing an exchange coupling film for producing a multilayer film having exchange coupling,
It can be manufactured by performing layered film formation in a time-varying magnetic field. Here, the order of forming the antiferromagnetic film and the ferromagnetic film on the substrate may be such that the antiferromagnetic film is formed first, and the ferromagnetic film is formed thereon. The magnetic film may be formed first, and the antiferromagnetic film may be formed thereon in this order.
【００３２】また、本発明の第一乃至第四に関る交換結
合膜の他の製造方法として、基板上に反強磁性膜と強磁
性膜上とを積層して成膜することにより反強磁性膜と強
磁性膜とが交換結合を有する多層膜を製造する工程と、
多層膜を製造した後に時間的に変化する磁場中で熱処理
を行う方法がある。この製造方法によれば、多層膜の異
方性磁界の向きを略均等にすることができ、磁心の透磁
率が略等方的であるため、磁気ヘッドの磁路形成に適し
た磁心を製造することができる。Further, as another method of manufacturing the exchange coupling film according to the first to fourth aspects of the present invention, an antiferromagnetic film and a ferromagnetic film are laminated on a substrate to form a film. A step of manufacturing a multilayer film having a magnetic film and a ferromagnetic film having exchange coupling,
There is a method of performing a heat treatment in a time-varying magnetic field after manufacturing a multilayer film. According to this manufacturing method, the direction of the anisotropic magnetic field of the multilayer film can be made substantially uniform, and the magnetic permeability of the magnetic core is substantially isotropic, so that a magnetic core suitable for forming the magnetic path of the magnetic head can be manufactured. can do.
【００３３】さらに、交換結合膜の成膜時または熱処理
時に例えば回転磁界を用いれば、強磁性膜と交換結合す
る反強磁性膜の異方性磁界の方向を略均等に分布させる
ことができ、その結果、強磁性膜の受ける異方性磁界の
方向を略均等に分布させることができる。こうして強磁
性膜の受ける異方性磁界の方向を略均等に分布させるこ
とによって、交換結合膜は透磁率が略等方的となる。そ
の結果、この交換結合膜を用いれば、磁気ヘッドなどに
おける磁気回路形成が容易となる。Further, if a rotating magnetic field is used, for example, during the formation of the exchange coupling film or during the heat treatment, the direction of the anisotropic magnetic field of the antiferromagnetic film exchange-coupled with the ferromagnetic film can be substantially uniformly distributed. As a result, the direction of the anisotropic magnetic field received by the ferromagnetic film can be distributed substantially uniformly. By thus distributing the directions of the anisotropic magnetic field applied to the ferromagnetic film substantially uniformly, the exchange coupling film has a substantially isotropic magnetic permeability. As a result, the use of this exchange coupling film facilitates the formation of a magnetic circuit in a magnetic head or the like.
【００３４】[0034]
【発明の実施の形態】（実施の形態１）まず、交換結合
膜について本発明の実施の形態を図面に基づき具体的に
説明する。(Embodiment 1) First, an embodiment of the present invention for an exchange coupling film will be specifically described with reference to the drawings.
【００３５】図１及び２は実施の形態１を説明するため
の斜視図である。図１に示すように、反強磁性膜４２と
強磁性膜４３は図示せぬ基板上に積層形成され強磁性膜
４３の部分領域と反強磁性膜４２の部分領域とが互いに
交換結合し、図２に示すように、強磁性膜４３の各部分
領域４３ａは異なる磁気異方性を備え、その部分領域４
３ａの外縁は部分領域４３ａに対応する反強磁性膜４２
ａの交換結合磁界によって固着されることから、外部磁
界が０では、図２に示す磁気異方性をもって固着され
る。FIGS. 1 and 2 are perspective views for explaining the first embodiment. As shown in FIG. 1, the antiferromagnetic film 42 and the ferromagnetic film 43 are laminated on a substrate (not shown), and a partial region of the ferromagnetic film 43 and a partial region of the antiferromagnetic film 42 are exchange-coupled to each other. As shown in FIG. 2, each partial region 43a of the ferromagnetic film 43 has a different magnetic anisotropy.
The outer edge of 3a is the antiferromagnetic film 42 corresponding to the partial region 43a.
Since it is fixed by the exchange coupling magnetic field a, when the external magnetic field is 0, it is fixed with the magnetic anisotropy shown in FIG.
【００３６】反強磁性膜には各種の材料を用いることが
できる。例えば、ＩｒＭｎ膜、またはＦｅＭｎ膜を好適
に用いることができる。それぞれの膜の厚さについて
は、強磁性膜に対し異方性磁界を付与できる範囲の厚さ
であれば特に制限されず、夫々例えば５ｎｍ〜５００ｎ
ｍとすることができる。Various materials can be used for the antiferromagnetic film. For example, an IrMn film or a FeMn film can be suitably used. The thickness of each film is not particularly limited as long as the thickness is within a range where an anisotropic magnetic field can be applied to the ferromagnetic film.
m.
【００３７】強磁性膜としては各種高透磁率材料が使用
でき、例えばＮｉＦｅ膜、又、はＣｏＦｅ膜を好適に使
用することができる。そして異方性磁界の大きさは強磁
性膜の厚さが厚くなれば小さくなり、厚さが薄くなれば
大きくなるが、強磁性膜が適切な透磁率を有し、バルク
ハウゼンノイズが防止されていればよく、特に制限され
るものではない。例えば強磁性膜の厚さを１０〜５００
ｎｍとすることができる。As the ferromagnetic film, various high-permeability materials can be used. For example, a NiFe film or a CoFe film can be suitably used. The magnitude of the anisotropic magnetic field decreases as the thickness of the ferromagnetic film increases, and increases as the thickness decreases. However, the ferromagnetic film has an appropriate magnetic permeability and Barkhausen noise is prevented. And it is not particularly limited. For example, when the thickness of the ferromagnetic film is 10 to 500
nm.
【００３８】本実施の形態の強磁性膜４３における外部
磁界（Ｈ）−磁化（Ｍ）の関係を図３に示す。強磁性膜
４３は正負の飽和磁化±ＭにわたるＭ−Ｈカーブにおい
て、不連続な磁化変化が外部磁場Ｈ１において生じるて
いるが、その大きさは（Ｍｂ２−Ｍｂ１）であり、Ｍの
総変化量（＋Ｍ−（−Ｍ）＝２Ｍ）との比（（Ｍｂ２−
Ｍｂ１）／２Ｍ）は１０％以下である。従来の交換結合
膜では、図１９に示すように、（Ｍｂ１−Ｍｂ２）は磁
化の総変化量２Ｍの２０％程度存在する。FIG. 3 shows the relationship between the external magnetic field (H) and the magnetization (M) in the ferromagnetic film 43 of this embodiment. In the ferromagnetic film 43, a discontinuous magnetization change occurs in the external magnetic field H1 in the MH curve over the positive and negative saturation magnetization ± M, and the magnitude is (Mb2−Mb1), and the total change amount of M (+ M-(-M) = 2M) ((Mb2-
Mb1) / 2M) is 10% or less. In the conventional exchange coupling film, as shown in FIG. 19, (Mb1−Mb2) exists about 20% of the total change in magnetization 2M.
【００３９】次に、本発明の応用例を図４及び図５を用
いて説明する。図４に模式的に示した断面図のように基
板５１上に反強磁性膜５２と強磁性膜５３の積層、又、
は図５に模式的に示した断面図のように強磁性膜５３と
反強磁性膜５２の積層を繰り返すことによって、多層膜
５５とすることができる。Next, an application example of the present invention will be described with reference to FIGS. As shown in the sectional view schematically shown in FIG. 4, an antiferromagnetic film 52 and a ferromagnetic film 53 are stacked on a substrate 51, and
The multilayer film 55 can be formed by repeating the lamination of the ferromagnetic film 53 and the antiferromagnetic film 52 as shown in the sectional view schematically shown in FIG.
【００４０】強磁性膜の受ける異方性磁界の大きさは強
磁性膜の厚さに反比例するので、単に強磁性膜一層の厚
さを厚くしたのでは部分領域の異方性磁界の大きさは維
持できないが、多層膜の膜厚を厚くする場合には、積層
することで強磁性膜の部分領域の受ける異方性磁界の大
きさを確保しつつ多層膜の膜厚を厚くすることができ
る。Since the magnitude of the anisotropic magnetic field received by the ferromagnetic film is inversely proportional to the thickness of the ferromagnetic film, simply increasing the thickness of one ferromagnetic film does not increase the magnitude of the anisotropic magnetic field in the partial region. Can not be maintained, but when increasing the thickness of the multilayer film, it is possible to increase the thickness of the multilayer film while securing the magnitude of the anisotropic magnetic field received by the partial region of the ferromagnetic film by stacking. it can.
【００４１】さらに、図６及び図７に模式的に示した断
面図のように、反強磁性膜６２と強磁性膜６３の積層、
又は強磁性膜６３と反強磁性膜６２の組を順に繰り返
し、各組の間に非磁性層６４、例えばＴａ層を設けて交
換結合膜６５とすることができる。こうすることによっ
て、強磁性体膜６３はその片方の面からのみ、異方性磁
界を受けることができる。Further, as shown in the sectional views schematically shown in FIGS. 6 and 7, the antiferromagnetic film 62 and the ferromagnetic film 63 are laminated.
Alternatively, a pair of the ferromagnetic film 63 and the antiferromagnetic film 62 is sequentially repeated, and a nonmagnetic layer 64, for example, a Ta layer is provided between each pair to form the exchange coupling film 65. By doing so, the ferromagnetic film 63 can receive an anisotropic magnetic field only from one surface thereof.
【００４２】次に本実施の形態の交換結合膜の製造方法
について具体的に述べる。反強磁性膜４２、５２、６２
及び強磁性膜４３、５３，６３は夫々スパッタ法、蒸着
法等公知の成膜技術を用いて成膜する。成膜する下地は
Ａｌ2 Ｏ3 ・ＴｉＣ等の非磁性基板や、基板表面に形成
されたＡｌ2 Ｏ3 膜、ＳｉＯx膜、Ｔａ膜、Ｔｉ膜等の
アモルファス材料や結晶材料を用いることができる。Next, a method for manufacturing the exchange coupling film of the present embodiment will be specifically described. Antiferromagnetic films 42, 52, 62
The ferromagnetic films 43, 53 and 63 are formed using a known film forming technique such as a sputtering method and a vapor deposition method. Base for deposition or non-magnetic substrate such as Al 2 O 3 · TiC, Al 2 O 3 film formed on the substrate surface, SiO x film, Ta film, the use of amorphous materials and crystalline materials Ti film or the like it can.
【００４３】ここで、部分領域を導入する方法として、
強磁性膜４３、５３、６３の成膜中に、経時変化する磁
界であって強磁性膜４３、５３、６３の異方性磁界より
も最大値の大きい変化磁界、例えば回転磁場を与える。
これにより各部分領域の異方性磁界を略均等に分散させ
ることができ、透磁率が略等方的な交換結合膜が得られ
る。Here, as a method of introducing a partial region,
During the formation of the ferromagnetic films 43, 53, and 63, a changing magnetic field that changes with time and has a maximum value larger than the anisotropic magnetic field of the ferromagnetic films 43, 53, and 63, for example, a rotating magnetic field is applied.
As a result, the anisotropic magnetic field of each partial region can be substantially uniformly dispersed, and an exchange coupling film having a magnetic permeability of approximately isotropic can be obtained.
【００４４】部分領域を導入する他の方法として、多層
膜を成膜した後、反強磁性膜４２、５２、６２が異方性
を失う温度であるブロッキンク温度あるいはそれ以上ま
で加熱し、冷却する方法がある。異方性分散を確実に得
るためには、冷却する際に経時的に変化する磁界、例え
ば回転磁場を与えることができる。As another method for introducing a partial region, after forming a multilayer film, the antiferromagnetic films 42, 52, and 62 are heated to a blocking temperature at which the anisotropy loses anisotropy or higher, and cooled. There is a way. In order to reliably obtain anisotropic dispersion, a magnetic field that changes with time during cooling, for example, a rotating magnetic field can be applied.
【００４５】（実施の形態２）次に、本発明の交換結合
膜の異方性分散に関する測定方法を図８に断面図を示す
交換結合膜を用いて説明する。(Embodiment 2) Next, a method for measuring the anisotropic dispersion of an exchange coupling film of the present invention will be described with reference to an exchange coupling film whose sectional view is shown in FIG.
【００４６】まず、本実施の形態の異方性分散した交換
結合膜の製造方法を説明する。図８の断面図に示すよう
に、基板６１上に１００ｎｍＮｉＦｅ膜６３／５ｎｍＩ
ｒＭｎ膜６２／１００ｎｍＮｉＦｅ膜６３を６０回転／
分で回転する３００Ｏｅの磁界にて、基板を２００℃に
加熱しながら成膜し、φ５ｎｍに加工して交換結合膜を
製造した。First, a method for manufacturing an exchange-coupled film having anisotropic dispersion according to the present embodiment will be described. As shown in the sectional view of FIG. 8, a 100 nm NiFe film 63/5 nm I
The rMn film 62/100 nm NiFe film 63 is rotated 60 times /
The substrate was formed by heating the substrate to 200 ° C. in a magnetic field of 300 Oe rotating per minute, and processed to φ5 nm to produce an exchange coupling film.
【００４７】この交換結合膜について測定のために設け
た膜主面に存在する基準軸に対して、０，１５，３０，
４５，６０，７５，９０度の各方向に±４０Ｏｅの磁界
を印加した場合の磁界（Ｍ）−磁界（Ｈ）曲線を測定
し、いずれもΔＭｂ／ΔＭが１０％以下であることが確
認できた。尚、基準軸及び各測定方向は図面の紙面とは
垂直な面内である。ΔＭｂ／ΔＭが１０％以下は、各強
磁性膜６３の異方性は良好に分散していることがわか
る。同様に、各方向の磁束密度（Ｂ）−磁界（Ｈ）曲線
を測定し初透磁率、最大透磁率を測定したところ、各値
の変化は±１０％以下であった。With respect to a reference axis existing on the main surface of the film provided for measurement with respect to the exchange coupling film, 0, 15, 30,
A magnetic field (M) -magnetic field (H) curve was measured when a magnetic field of ± 40 Oe was applied in each direction of 45, 60, 75, and 90 degrees, and it was confirmed that ΔMb / ΔM was 10% or less in all cases. Was. The reference axis and each measurement direction are in a plane perpendicular to the plane of the drawing. It can be seen that when ΔMb / ΔM is 10% or less, the anisotropy of each ferromagnetic film 63 is well dispersed. Similarly, when a magnetic flux density (B) -magnetic field (H) curve in each direction was measured to measure the initial magnetic permeability and the maximum magnetic permeability, the change of each value was ± 10% or less.
【００４８】（実施の形態３）次に、本発明の交換結合
膜の他の実施の形態を図９及び図１０を用いて以下に説
明する。(Embodiment 3) Next, another embodiment of the exchange coupling film of the present invention will be described below with reference to FIGS.
【００４９】まず、異方性分散した交換結合膜の製造方
法を説明する。２０ｎｍＰｔＭｎ膜／３００ｎｍＮｉＦ
ｅ膜の積層膜を成膜し、５ｋＯｅの回転する磁場中で基
板温度を３００℃に保持して１０時間の熱処理を施し
た。その後、図９の上面図に示す平面形状をもつ膜９４
を２つ形成した。そのうちの一つには、図１０の上面図
に示すように、硬質磁性膜である３００ｎｍのＣｏＰｔ
膜９５を両脇に形成し、図１０の矢印の方向に着磁し
た。尚、ＣｏＰｔ膜の下地には、図示せぬＴａ膜を用い
た。残る一つには、硬質磁性膜を付加せず、図９の平面
形状のままとした。First, a method for producing an exchange coupling film in which anisotropic dispersion is performed will be described. 20 nm PtMn film / 300 nm NiF
An e-layered film was formed, and a heat treatment was performed for 10 hours while maintaining the substrate temperature at 300 ° C. in a rotating magnetic field of 5 kOe. Thereafter, a film 94 having a planar shape shown in the top view of FIG.
Were formed. One of them is a hard magnetic film of 300 nm CoPt, as shown in the top view of FIG.
Films 95 were formed on both sides and magnetized in the direction of the arrow in FIG. Note that a Ta film (not shown) was used as a base of the CoPt film. In the other one, a hard magnetic film was not added and the plane shape of FIG. 9 was kept.
【００５０】この二つの交換結合膜の磁区観察を磁気カ
ー効果により行ったところ、図９に示す交換結合膜では
還流磁区を形成し、一方の図１０に示す交換結合膜では
還流磁区は形成されないことが確認された。還流磁区が
形成されるとその大きな磁区の磁壁がスムーズに移動し
ないため、透磁率が低下したり、バルクハウゼンノイズ
が発生する。従って、図１０に示すような硬質磁性膜を
隣りに備える硬質磁性膜が透磁率の確保、及びバルクハ
ウゼンノイズを抑制するために好ましいことがわかる。
尚、硬質磁性膜は隣接配置することが好ましいが、その
もれ磁界が還流磁区抑制のために実質的に効果が得られ
る程度に離間させてもよい。When the magnetic domains of the two exchange-coupling films were observed by the magnetic Kerr effect, a return magnetic domain was formed in the exchange-coupling film shown in FIG. 9 and no return magnetic domain was formed in the exchange-coupling film shown in FIG. It was confirmed that. When the return magnetic domain is formed, the domain wall of the large magnetic domain does not move smoothly, so that the magnetic permeability decreases and Barkhausen noise occurs. Therefore, it can be seen that a hard magnetic film having a hard magnetic film adjacent thereto as shown in FIG. 10 is preferable for securing magnetic permeability and suppressing Barkhausen noise.
The hard magnetic films are preferably arranged adjacent to each other, but may be separated to such an extent that the leakage magnetic field is substantially effective for suppressing the return magnetic domains.
【００５１】（実施の形態４）次に、本発明の磁気セン
サに関る磁気抵抗効果型磁気ヘッドについて図１１を用
いて説明する。(Embodiment 4) Next, a magnetoresistive head according to a magnetic sensor of the present invention will be described with reference to FIG.
【００５２】図１１に模式的に示した斜視図のように、
強磁性膜７３と反強磁性膜７２が積層された交換結合膜
を磁気ヨーク７４に用い、磁気記録媒体対向面から後退
した位置に磁気抵抗効果素子７６とこれに接続する電極
７７を配置して磁気抵抗効果型磁気ヘッドを構成するこ
とができる。As shown in the perspective view schematically in FIG.
An exchange coupling film in which a ferromagnetic film 73 and an antiferromagnetic film 72 are laminated is used for a magnetic yoke 74, and a magnetoresistive effect element 76 and an electrode 77 connected to the magnetoresistive effect element 76 are arranged at a position retracted from a surface facing a magnetic recording medium. A magnetoresistive head can be configured.
【００５３】この構成によって、紙面手前側の媒体対向
面で一対の磁気ヨーク７４が対向する距離（ギャップ
長）を十分に小さくすることができ、高い線記録密度に
対応できる。ここで、磁気ヨークに異方性が分散した強
磁性膜を用いているので、強磁性膜の複数の部分領域を
囲む大きな磁壁移動を抑制することができ大きな磁壁の
不可逆的移動に原因するバルクハウゼンノイズを防止す
ることが可能である。これは、実効的に２５μｍ2 以下
の微細な磁区を形成できたことによるものと考えられ
る。With this configuration, the distance (gap length) at which the pair of magnetic yokes 74 face each other on the medium facing surface on the front side of the drawing can be sufficiently reduced, and a high linear recording density can be accommodated. Here, since the magnetic yoke is made of a ferromagnetic film having anisotropy dispersed therein, large domain wall motion surrounding a plurality of partial regions of the ferromagnetic film can be suppressed, and bulk caused by irreversible large domain wall motion can be suppressed. It is possible to prevent Hausen noise. This is considered to be because fine magnetic domains of 25 μm 2 or less were effectively formed.
【００５４】これまでには、磁気抵抗効果素子あるいは
コイル部に磁気記録媒体からの磁化情報を引き込み、伝
達する目的で使用される薄膜磁性体において、その磁区
の大きさをほぼ全面にわたって２５μｍ2 以下とするこ
とができず、微細磁区の効果を確認した例はなく、その
効果も確かではなかった。Heretofore, in a thin-film magnetic material used for attracting and transmitting magnetization information from a magnetic recording medium to a magnetoresistive element or a coil portion, the size of the magnetic domain has been reduced to 25 μm 2 or less over almost the entire surface. The effect of the fine magnetic domain was not confirmed, and the effect was not certain.
【００５５】磁区の大きさが約２５μｍ2 付近で、磁束
密度と磁界との関係に不連続移動が観察されなくなり、
５μｍ2 以下で皆無となった。これに反し、５０μｍ2
近辺では不連続の曲線となった。特に、交換結合膜の大
きさが１００μｍ2 以下の場合、磁区の大きさが１μｍ
2 以下で効果は大となった。さらにコイルを鎖交する１
００μｍ2 のリング状閉磁路を形成し、そのインダクタ
ンスを測定すると、磁区の大きさが１μｍ2 以下でイン
ダクタンスは急激に大きくなり、磁束が急激に曲りやす
くなってなっていることが確認できた。When the size of the magnetic domain is about 25 μm 2 , discontinuous movement is no longer observed in the relationship between the magnetic flux density and the magnetic field.
Nothing was found below 5 μm 2 . On the contrary, 50 μm 2
In the vicinity, the curve was discontinuous. In particular, when the size of the exchange coupling film is 100 μm 2 or less, the size of the magnetic domain is 1 μm 2
The effect was significant below 2 . Linking the coil 1
When a ring-shaped closed magnetic path of 00 μm 2 was formed and the inductance thereof was measured, it was confirmed that the inductance increased rapidly when the size of the magnetic domain was 1 μm 2 or less, and the magnetic flux was easily sharply bent.
【００５６】（実施の形態５）図１２は本発明の他の磁
気抵抗効果型ヘッドを説明するための模式的斜視図であ
る。図１２に示すように、反強磁性膜８２と強磁性膜８
３の積層された交換結合膜を磁気ヨーク８４に用い、媒
体対向面に存在する磁気ギャップ８８を磁気ヨーク８４
及び磁気抵抗効果素子８６が形成される基板８１の主面
に対して略垂直方向に配置した磁気抵抗効果型ヘッドが
得られる。尚８９は後部ギャップである。磁気ヨーク８
４は前記基板８１の主面に平行に平面的に広がってお
り、磁気抵抗効果素子８６もその平面に沿って形成する
ことができ、安定した特性のヘッドを提供可能である。(Embodiment 5) FIG. 12 is a schematic perspective view for explaining another magnetoresistive head according to the present invention. As shown in FIG. 12, the antiferromagnetic film 82 and the ferromagnetic film 8
3 is used for the magnetic yoke 84, and the magnetic gap 88 existing on the medium facing surface is
In addition, a magnetoresistive head arranged substantially perpendicular to the main surface of the substrate 81 on which the magnetoresistive element 86 is formed can be obtained. Reference numeral 89 denotes a rear gap. Magnetic yoke 8
Numeral 4 extends in a plane parallel to the main surface of the substrate 81, and the magnetoresistive element 86 can also be formed along the plane, so that a head having stable characteristics can be provided.
【００５７】次に、本発明の磁気記録ヘッドについて、
その実施の形態について具体的に述べる。 （実施の形態６）図１３は、本実施形態のコイル型磁気
記録ヘッドを示す模式的斜視図である。Next, regarding the magnetic recording head of the present invention,
The embodiment will be specifically described. (Embodiment 6) FIG. 13 is a schematic perspective view showing a coil type magnetic recording head of this embodiment.
【００５８】このコイル型磁気記録ヘッドでは、磁気記
録媒体対向面に磁気ギャップ１０３を介して対向配置さ
れた交換結合膜からなる磁気ヨーク１０１と、媒体対向
面よりも後方にて磁気ヨーク１０１に巻回されたコイル
１０２を有する。磁気ヨーク１０１は本発明の交換結合
膜を備えることから、透磁率も高く、バルクハウゼンノ
イズの少ない、所望の記録特性を得ることができる。
尚、磁気ギャップ１０３は、基板１０５の主面１０４に
平行に平面的に広がる磁気ヨーク１０１と略垂直方向に
長手方向を備える。In this coil type magnetic recording head, a magnetic yoke 101 composed of an exchange coupling film is disposed opposite to a magnetic recording medium facing surface via a magnetic gap 103, and is wound around the magnetic yoke 101 behind the medium facing surface. It has a turned coil 102. Since the magnetic yoke 101 includes the exchange coupling film of the present invention, it is possible to obtain desired recording characteristics having high magnetic permeability and low Barkhausen noise.
The magnetic gap 103 has a longitudinal direction substantially perpendicular to the magnetic yoke 101 extending in a plane parallel to the main surface 104 of the substrate 105.
【００５９】本発明の磁気ヘッドは、磁極を有する磁心
として反強磁性膜と交換結合を有する強磁性膜交換結合
膜を用いており、強磁性膜の部分領域は反強磁性膜との
結合によって拘束できるので、これによって強磁性膜の
大きな磁壁移動を抑制することができ、大きなバルクハ
ウゼンノイズを抑制可能である。The magnetic head of the present invention uses a ferromagnetic film exchange coupling film having exchange coupling with an antiferromagnetic film as a magnetic core having a magnetic pole, and a partial region of the ferromagnetic film is formed by coupling with the antiferromagnetic film. As a result, large domain wall motion of the ferromagnetic film can be suppressed, and large Barkhausen noise can be suppressed.
【００６０】（実施の形態７）図１４は、ハードディス
クドライブの記録再生分離型の磁気ヘッドを示す平面図
である。(Embodiment 7) FIG. 14 is a plan view showing a recording / reproducing separation type magnetic head of a hard disk drive.
【００６１】基板１１６上には、１００ｎｍＮｉＦｅ膜
／５ｎｍＩｒＭｎ膜／１００ｎｍＮｉＦｅ膜の交換結合
膜からなる磁気ヨーク１１１、１１２が備えられ、記録
ヘッドのヨーク１１１にはこのヨークに磁界を付与する
コイル１１３が巻き付けられている。また、磁気抵抗効
果型再生ヘッドのヨーク１１２には、このヨークに磁気
的に結合した磁気抵抗効果膜１１４と、この磁気抵抗効
果膜１１４にセンス電流を供給する電極１１５が備えら
れている。磁気ヨーク１１１，１１２は、媒体対向面
（ＡＢＳ）にてギャップを介して対向しており、このギ
ャップによって記録媒体の信号磁界を拾う。On the substrate 116, there are provided magnetic yokes 111 and 112 each composed of an exchange-coupling film of 100 nm NiFe film / 5 nm IrMn film / 100 nm NiFe film. Have been. The yoke 112 of the magnetoresistive read head includes a magnetoresistive film 114 magnetically coupled to the yoke and an electrode 115 for supplying a sense current to the magnetoresistive film 114. The magnetic yokes 111 and 112 face each other via a gap at a medium facing surface (ABS), and pick up a signal magnetic field of the recording medium by the gap.
【００６２】まず、磁気ヨーク１１２を構成する交換結
合膜の強磁性膜及び反強磁性膜は、順次、６０回転／分
で回転する３００Ｏｅの磁場中にて基板１１６を２００
℃に加熱しながら成膜し、図１４に示す形状に加工し
た。次に、ＣｏＦｅ／Ｃｕ／ＣｏＦｅ／ＩｒＭｎの積層
膜からなる磁気抵抗効果膜１１４を磁気ヨーク１１２と
磁気的に結合するように形成し、さらにこの磁気抵抗効
果膜１１４の両端に接続する電極Ｔａ／Ｃｕ／Ｔａを積
層形成して、磁気抵抗効果型再生ヘッドを形成した。次
に、同一基板１１６上に磁気抵抗効果型再生ヘッドとわ
ずかに離れて１０ｎｍＦｅＣｏ膜／５ｎｍＩｒＭｎ膜／
１００ｎｍＦｅＣｏ膜からなる積層膜を、６０回転／分
にて回転する３００Ｏｅの磁場中にて基板を２００℃に
加熱しながら成膜した。この成膜の後、この積層膜を図
１４に示す磁気記録ヘッドの磁気ヨーク１１１形状に加
工し、励起用コイル１１３を形成した。励起コイル１１
３は磁気ヨーク１１１に巻きつけられるように形成する
が、これは従来知られた方法で行うことができるので、
ここでの詳細な説明は省略する。First, the ferromagnetic film and the antiferromagnetic film of the exchange-coupling film constituting the magnetic yoke 112 are formed by rotating the substrate 116 in the magnetic field of 300 Oe rotating at 60 revolutions / minute.
The film was formed while being heated to ° C., and processed into the shape shown in FIG. Next, a magnetoresistive film 114 made of a laminated film of CoFe / Cu / CoFe / IrMn is formed so as to be magnetically coupled to the magnetic yoke 112, and electrodes Ta / are connected to both ends of the magnetoresistive film 114. Cu / Ta was laminated to form a magnetoresistive read head. Next, on the same substrate 116, a 10 nm FeCo film / 5 nm IrMn film /
A laminated film composed of a 100 nm FeCo film was formed while heating the substrate to 200 ° C. in a 300 Oe magnetic field rotating at 60 rpm. After this film formation, the laminated film was processed into the shape of the magnetic yoke 111 of the magnetic recording head shown in FIG. Excitation coil 11
3 is formed so as to be wound around the magnetic yoke 111, since this can be performed by a conventionally known method.
Detailed description here is omitted.
【００６３】この後、磁気抵抗効果型再生ヘッドと磁気
記録ヘッドとを一体としてヘッドスライダとして加工し
てハードディスクドライブに組み込んだ。このハードデ
ィスクドライブのトラック幅はヘッドに用いた本発明の
積層膜の膜厚と一致し、２００ｎｍという非常に狭いト
ラック幅を実現できた。Thereafter, the magnetoresistive read head and the magnetic recording head were integrally processed as a head slider and incorporated into a hard disk drive. The track width of this hard disk drive coincided with the thickness of the laminated film of the present invention used for the head, and a very narrow track width of 200 nm was realized.
【００６４】（実施の形態８）図１５は本実施の形態の
垂直磁気記録媒体を説明するための断面図である。図１
５に示すように、１００ｎｍＮｉＦｅ膜１２１／５ｎｍ
ＩｒＭｎ膜１２２／１００ｎｍＮｉＦｅ膜１２３を順
次、６０回転／分で回転する３００Ｏｅの磁場中にて基
板１２６を２００℃に加熱しながら成膜した。そして、
この上記ＮｉＦｅ膜１２１／ＩｒＭｎ膜積層膜１２２／
ＮｉＦｅ膜１２３からなる裏打ち層１２０の上に１００
ｎｍＣｏＣｒ記録層１２５を積層した後、図示せぬ保護
膜を付着して垂直磁気記録媒体が完成する。この実施の
形態では、裏打ち層１２０が異方性分散を持つことか
ら、高記録密度に適した垂直磁気記録媒体が得られた。(Embodiment 8) FIG. 15 is a sectional view for explaining a perpendicular magnetic recording medium of the present embodiment. FIG.
As shown in FIG. 5, a 100 nm NiFe film 121/5 nm
An IrMn film 122/100 nm NiFe film 123 was sequentially formed while heating the substrate 126 to 200 ° C. in a 300 Oe magnetic field rotating at 60 rpm. And
This NiFe film 121 / IrMn film laminated film 122 /
On the backing layer 120 made of the NiFe film 123, 100
After laminating the nmCoCr recording layer 125, a protective film (not shown) is attached to complete the perpendicular magnetic recording medium. In this embodiment, since the backing layer 120 has anisotropic dispersion, a perpendicular magnetic recording medium suitable for high recording density was obtained.
【００６５】（実施の形態９）図１６は実施の形態９に
関る磁気抵抗効果型再生ヘッドを説明するための斜視図
である。表面にＡｌ2 Ｏ3 膜等の非磁性膜が形成された
ＴｉＣ基板１３０上には、一対の磁気ヨーク１３１が形
成され、この磁気ヨーク１３１に磁気的に結合する磁気
抵抗効果膜１３２が形成され、さらのこの磁気抵抗効果
膜１３２の両端には一対の電極１３４が形成され、磁気
抵抗効果膜にセンス電流を付与する。一対の磁気ヨーク
１３１はＡＢＳにて磁気ギャップ１３３を介して対向し
ている。この実施の形態の磁気ヨーク１３１は、本発明
の交換結合膜よりなる異方性が分散した磁気ヨーク１３
１であり、バルクハウゼンノイズの発生率が低く、また
透磁率の高い磁気ヨーク１３１を用いていることから優
れた再生特性を備える。(Embodiment 9) FIG. 16 is a perspective view for explaining a magnetoresistive read head according to Embodiment 9 of the present invention. A pair of magnetic yokes 131 are formed on a TiC substrate 130 having a nonmagnetic film such as an Al 2 O 3 film formed on the surface, and a magnetoresistive film 132 magnetically coupled to the magnetic yokes 131 is formed. Further, a pair of electrodes 134 are formed at both ends of the magnetoresistive film 132 to apply a sense current to the magnetoresistive film. The pair of magnetic yokes 131 face each other via the magnetic gap 133 at the ABS. The magnetic yoke 131 according to the present embodiment is a magnetic yoke 13 having an anisotropic dispersion composed of the exchange coupling film of the present invention.
1, since the magnetic yoke 131 having a low generation rate of Barkhausen noise and a high magnetic permeability is used, it has excellent reproduction characteristics.
【００６６】[0066]
【発明の効果】本発明によれば、交換結合膜において、
磁壁が大きな不可逆的移動することに原因する大きなバ
ルクハウゼンノイズを防止することができる。又、交換
結合膜の異方性磁界の向きを略均等に分布させることが
でき、これによって透磁率を略等方的にすることができ
る。According to the present invention, in an exchange coupling membrane,
Large Barkhausen noise caused by large irreversible movement of the domain wall can be prevented. In addition, the direction of the anisotropic magnetic field of the exchange coupling film can be distributed substantially uniformly, whereby the magnetic permeability can be made substantially isotropic.
【００６７】そしてこの交換結合膜を磁気ヨークとして
使用すれば、磁気抵抗効果素子を磁気記録媒体対向面か
ら後退した位置に配置した磁気抵抗効果型磁気ヘッドの
低ノイズ化が得られるので、高密度記録をさらに進める
ことができる。If this exchange coupling film is used as a magnetic yoke, the noise of the magnetoresistive effect type magnetic head in which the magnetoresistive element is disposed at a position retracted from the surface facing the magnetic recording medium can be reduced, so that the high density can be achieved. Recording can proceed further.
【図１】 本発明の実施の形態１を説明するための図で
ある。FIG. 1 is a diagram for explaining Embodiment 1 of the present invention.
【図２】 本発明の実施の形態１を説明するための図で
ある。FIG. 2 is a diagram for describing Embodiment 1 of the present invention.
【図３】 本発明の実施の形態１を説明するための図で
ある。FIG. 3 is a diagram for explaining Embodiment 1 of the present invention.
【図４】 本発明の実施の形態１の応用例を説明するた
めの図である。FIG. 4 is a diagram for describing an application example of the first embodiment of the present invention.
【図５】 本発明の実施の形態１の応用例を説明するた
めの図である。FIG. 5 is a diagram for describing an application example of the first embodiment of the present invention.
【図６】 本発明の実施の形態１の他の応用例を説明す
るための図である。FIG. 6 is a diagram for explaining another application example of the first embodiment of the present invention.
【図７】 本発明の実施の形態１の他の応用例を説明す
るための図である。FIG. 7 is a diagram for explaining another application example of the first embodiment of the present invention.
【図８】 本発明の実施の形態２を説明するための図で
ある。FIG. 8 is a diagram for explaining Embodiment 2 of the present invention.
【図９】 本発明の実施の形態３を説明するための図で
ある。FIG. 9 is a diagram for explaining Embodiment 3 of the present invention.
【図１０】 本発明の実施の形態３を説明するための図
である。FIG. 10 is a diagram for explaining Embodiment 3 of the present invention.
【図１１】 本発明の実施の形態４を説明するための図
である。FIG. 11 is a diagram for explaining Embodiment 4 of the present invention.
【図１２】 本発明の実施の形態５を説明するための図
である。FIG. 12 is a diagram for describing Embodiment 5 of the present invention.
【図１３】 本発明の実施の形態６を説明するための図
である。FIG. 13 is a diagram for explaining Embodiment 6 of the present invention.
【図１４】 本発明の実施の形態７を説明するための図
である。FIG. 14 is a diagram for explaining Embodiment 7 of the present invention.
【図１５】 本発明の実施の形態８を説明するための図
である。FIG. 15 is a diagram for explaining Embodiment 8 of the present invention.
【図１６】 本発明の実施の形態９を説明するための図
である。FIG. 16 is a diagram for explaining Embodiment 9 of the present invention.
【図１７】 従来の技術を説明するための図である。FIG. 17 is a diagram for explaining a conventional technique.
【図１８】 従来の技術を説明するための図である。FIG. 18 is a diagram for explaining a conventional technique.
【図１９】 従来の技術を説明するための図である。FIG. 19 is a diagram for explaining a conventional technique.
１、５１、６１…基板 ２、４２、５２、６２…反強磁性膜 ３、４３、５３、６３…強磁性膜 ４、６４…非磁性体層 ２４、４５、５５、６５、９４…交換結合膜 ２４、７６、８６、１１４、１３２…磁気抵抗効果素子 ３０、７７、１１５、１３４…電極 ２５、８８、１０３、１３３…磁気ギャップ 1, 51, 61: substrate 2, 42, 52, 62: antiferromagnetic film 3, 43, 53, 63: ferromagnetic film 4, 64: nonmagnetic layer 24, 45, 55, 65, 94: exchange coupling Films 24, 76, 86, 114, 132: Magnetoresistance effect elements 30, 77, 115, 134: Electrodes 25, 88, 103, 133: Magnetic gap
───────────────────────────────────────────────────── フロントページの続き (72)発明者 船山 知己 神奈川県川崎市幸区堀川町72番地 株式会 社東芝川崎事業所内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Tomomi Funayama 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Inside the Toshiba Kawasaki Plant
Claims (15)
らなり、前記強磁性膜内に磁化方向の異なる複数の部分
領域を備えることで前記強磁性膜の磁化が異方性分散し
てなることを特徴とする交換結合膜。1. A ferromagnetic film and an antiferromagnetic film which are formed by lamination and comprising a plurality of partial regions having different magnetization directions in the ferromagnetic film, whereby the magnetization of the ferromagnetic film is anisotropically dispersed. An exchange-coupling membrane characterized by the fact that:
すると、前記部分領域の面積は１０以下であることを特
徴とする請求項１記載の交換結合膜。2. The exchange coupling film according to claim 1, wherein the total area of one surface of said ferromagnetic film is 100, and the area of said partial region is 10 or less.
変化率は±１０％以内であることを特徴とする請求項１
記載の交換結合膜。3. The exchange coupling film according to claim 1, wherein the rate of change depending on the direction of the magnetic permeability is within ± 10%.
An exchange coupling membrane as described.
膜、軟磁性微結晶膜、グラニュラー軟磁性膜、及び軟磁
性フェライト膜のいずれかを含むことを特徴とする請求
項１記載の交換結合膜。4. The ferromagnetic film includes one of a soft magnetic film, an amorphous Co-based film, a soft magnetic microcrystalline film, a granular soft magnetic film, and a soft magnetic ferrite film. 2. The exchange coupling membrane according to 1.
ｔＭｎ、ＮｉＭｎ、ＮｉＯ、アモルファスＦｅ2 Ｏ3 の
いずれかを含むことを特徴とする請求項１記載の交換結
合膜。5. The antiferromagnetic film is made of IrMn, PdMn, P
tMn, NiMn, NiO, exchange coupling film according to claim 1, characterized in that it comprises one of amorphous Fe 2 O 3.
Ｎｂを含み、前記反強磁性膜はＩｒＭｎ，ＰｔＭｎある
いはＮｉＭｎを含むことを特徴とする請求項１記載の交
換結合膜。6. The ferromagnetic film is made of NiFe or CoZr.
2. The exchange coupling film according to claim 1, wherein the exchange coupling film contains Nb, and the antiferromagnetic film contains IrMn, PtMn, or NiMn.
あるいは軟磁性フェライトを含み、前記反強磁性膜はア
モルファスＦｅ2 Ｏ3 を含むことを特徴とする請求項１
記載の交換結合膜。7. The ferromagnetic film is a soft magnetic granular material,
2. A method according to claim 1, wherein said antiferromagnetic film contains soft magnetic ferrite, and said antiferromagnetic film contains amorphous Fe 2 O 3.
An exchange coupling membrane as described.
前記反強磁性膜は前記二つの強磁性膜の間に位置するこ
とを特徴とする請求項１記載の交換結合膜。8. The exchange coupling film includes a second ferromagnetic film,
The exchange coupling film according to claim 1, wherein the antiferromagnetic film is located between the two ferromagnetic films.
た複数の前記強磁性膜と複数の前記反強磁性膜を備える
ことを特徴とする請求項１記載の交換結合膜。9. The exchange-coupling film according to claim 1, wherein said exchange-coupling film includes a plurality of said ferromagnetic films and a plurality of said antiferromagnetic films which are alternately stacked.
なし、別の前記強磁性膜と前記反強磁性膜からなる前記
組と非磁性膜を介して隣接していることを特徴とする請
求項１記載の交換結合膜。10. A method according to claim 1, wherein said ferromagnetic film and said antiferromagnetic film form a set and are adjacent to another set of said ferromagnetic film and said antiferromagnetic film via a nonmagnetic film. The exchange coupling membrane according to claim 1, wherein
からなり、前記強磁性膜が磁化方向の異なる複数の部分
領域を備えることで前記強磁性膜の磁化が異方性分散し
てなる交換結合膜を備える磁心と、 前記磁心に磁気的に結合した磁気抵抗効果膜とを備える
ことを特徴とする磁気センサ。11. A ferromagnetic film and an antiferromagnetic film which are formed in a stacked manner, wherein the ferromagnetic film includes a plurality of partial regions having different magnetization directions, whereby the magnetization of the ferromagnetic film is anisotropically dispersed. A magnetic sensor comprising: a magnetic core including an exchange coupling film; and a magnetoresistive film magnetically coupled to the magnetic core.
果膜、トンネル磁気抵抗効果膜、グラニュラー磁気抵抗
効果膜のいずれかよりなることを特徴とする請求項１１
記載の磁気センサ。12. The magnetoresistive film according to claim 11, wherein said magnetoresistive film is made of one of a giant magnetoresistive film, a tunnel magnetoresistive film, and a granular magnetoresistive film.
A magnetic sensor as described.
いて磁気ギャップを介して対向する一対の磁心であっ
て、積層形成された強磁性膜と反強磁性膜を備え、前記
強磁性膜が磁化方向の異なる複数の部分領域を備えるこ
とで前記強磁性膜の磁化が異方性分散した交換結合膜を
備える一対の磁心と、 前記媒体対向面より後方に位置し、前記磁心に電流磁界
を付与するコイルとを備えることを特徴とする磁気記録
ヘッド。13. A pair of magnetic cores facing each other via a magnetic gap on a medium facing surface facing a magnetic recording medium, comprising: a laminated ferromagnetic film and an antiferromagnetic film; By providing a plurality of partial regions having different directions, a pair of magnetic cores having an exchange coupling film in which the magnetization of the ferromagnetic film is anisotropically dispersed, and a current magnetic field is applied to the magnetic cores located rearward from the medium facing surface. A magnetic recording head comprising:
と接して、あるいは近くに配置されあたバイアス付与膜
よりバイアス磁界が与えられることを特徴とする請求項
１３記載の磁気記録ヘッド。14. The magnetic recording head according to claim 13, wherein a bias magnetic field is applied to an end of said exchange coupling film from a bias applying film disposed in contact with or near said exchange coupling film. .
からなり、前記強磁性膜が前記反強磁性膜よりも表面側
に位置し、前記強磁性膜が磁化方向の異なる複数の部分
領域を備えることで前記強磁性膜が異方性分散した磁化
を備える一対の交換結合膜を備えることを特徴とする磁
気記録媒体。15. A ferromagnetic film and an antiferromagnetic film formed in a stacked manner, wherein the ferromagnetic film is located on the surface side of the antiferromagnetic film, and the ferromagnetic film has a plurality of magnetization directions different from each other. A magnetic recording medium comprising a pair of exchange-coupling films provided with partial regions so that the ferromagnetic film has anisotropically dispersed magnetization.
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|---|---|---|---|
| JP07117199A JP4263802B2 (en) | 1998-03-17 | 1999-03-17 | Magnetic core, magnetic sensor, and magnetic recording head |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-67077 | 1998-03-17 | ||
| JP6707798 | 1998-03-17 | ||
| JP07117199A JP4263802B2 (en) | 1998-03-17 | 1999-03-17 | Magnetic core, magnetic sensor, and magnetic recording head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11329836A true JPH11329836A (en) | 1999-11-30 |
| JP4263802B2 JP4263802B2 (en) | 2009-05-13 |
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ID=26408272
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|---|---|---|---|
| JP07117199A Expired - Fee Related JP4263802B2 (en) | 1998-03-17 | 1999-03-17 | Magnetic core, magnetic sensor, and magnetic recording head |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1168308A3 (en) * | 2000-06-06 | 2002-01-30 | Matsushita Electric Industrial Co., Ltd. | Magnetic recording medium and magnetic recording apparatus using the same |
| EP1187104A2 (en) * | 2000-08-31 | 2002-03-13 | Kabushiki Kaisha Toshiba | A magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus |
| WO2001073762A3 (en) * | 2000-03-27 | 2002-04-04 | Ibm | Magnetic recording medium |
| KR20030074076A (en) * | 2002-03-06 | 2003-09-19 | 후지쯔 가부시끼가이샤 | Magnetic recording medium and magnetic storage apparatus |
| JP2008227024A (en) * | 2007-03-09 | 2008-09-25 | Taiyo Yuden Co Ltd | High-frequency magnetic thin-film, and high-frequency magnetic device using same magnetic thin-film |
| JP4591806B2 (en) * | 2001-05-14 | 2010-12-01 | 富士電機デバイステクノロジー株式会社 | Perpendicular magnetic recording medium and manufacturing method thereof |
| US9750312B2 (en) | 2012-10-09 | 2017-09-05 | 3M Innovative Properties Company | Fastener member |
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1999
- 1999-03-17 JP JP07117199A patent/JP4263802B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001073762A3 (en) * | 2000-03-27 | 2002-04-04 | Ibm | Magnetic recording medium |
| CN100373458C (en) * | 2000-03-27 | 2008-03-05 | 日立环球储存科技荷兰有限公司 | Magnetic recording medium |
| EP1168308A3 (en) * | 2000-06-06 | 2002-01-30 | Matsushita Electric Industrial Co., Ltd. | Magnetic recording medium and magnetic recording apparatus using the same |
| EP1187104A2 (en) * | 2000-08-31 | 2002-03-13 | Kabushiki Kaisha Toshiba | A magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus |
| EP1187104A3 (en) * | 2000-08-31 | 2003-04-02 | Kabushiki Kaisha Toshiba | A magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus |
| US7126795B2 (en) | 2000-08-31 | 2006-10-24 | Kabushiki Kaisha Toshiba | Magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus |
| KR100804915B1 (en) * | 2000-08-31 | 2008-02-20 | 가부시끼가이샤 도시바 | A Horizontal Yoke Type Magnetic Reproducing Head and a Magnetic Reproducing Apparatus |
| JP4591806B2 (en) * | 2001-05-14 | 2010-12-01 | 富士電機デバイステクノロジー株式会社 | Perpendicular magnetic recording medium and manufacturing method thereof |
| KR20030074076A (en) * | 2002-03-06 | 2003-09-19 | 후지쯔 가부시끼가이샤 | Magnetic recording medium and magnetic storage apparatus |
| JP2008227024A (en) * | 2007-03-09 | 2008-09-25 | Taiyo Yuden Co Ltd | High-frequency magnetic thin-film, and high-frequency magnetic device using same magnetic thin-film |
| US9750312B2 (en) | 2012-10-09 | 2017-09-05 | 3M Innovative Properties Company | Fastener member |
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