JPH1131600A - Plasma surface treatment device - Google Patents
Plasma surface treatment deviceInfo
- Publication number
- JPH1131600A JPH1131600A JP9200893A JP20089397A JPH1131600A JP H1131600 A JPH1131600 A JP H1131600A JP 9200893 A JP9200893 A JP 9200893A JP 20089397 A JP20089397 A JP 20089397A JP H1131600 A JPH1131600 A JP H1131600A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- tray
- electrode
- cleaning
- surface treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体チップ、小
物機械電気部品等の表面に成膜、エッチング、清浄等の
プラズマを用いた各種処理を施すプラズマ表面処理装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma surface treatment apparatus for performing various processes using plasma, such as film formation, etching, and cleaning, on the surface of semiconductor chips, small mechanical electric parts, and the like.
【０００２】[0002]
【従来の技術】半導体基板や小物機械電気部品、光学プ
ラスチック部品等の表面に導体層や絶縁層を成膜・積層
したり、逆に、半導体基板の表面や積層物の表面をエッ
チングするために、プラズマを用いて処理することは現
在極めて広く行なわれている。また、近年では基板等の
表面の汚れを除去するための洗浄にも、従来のフロン等
を用いたウェット処理に代わってプラズマによるドライ
クリーニング処理が広く用いられるようになりつつあ
る。2. Description of the Related Art For forming and laminating a conductive layer or an insulating layer on the surface of a semiconductor substrate, a small mechanical electric part, an optical plastic part, or the like, and conversely, for etching the surface of a semiconductor substrate or the surface of a laminate. Processing using plasma is currently widely performed. In recent years, dry cleaning processing using plasma has been widely used instead of conventional wet processing using chlorofluorocarbon or the like for cleaning to remove stains on the surface of a substrate or the like.
【０００３】従来のプラズマ表面処理装置では、反応室
内の下方に試料載置台が、そして、それに対向するよう
に上方に平板状電極が配置されるという構造が一般的で
あった。試料載置台上に試料を載置し、真空にした反応
室内に所定圧力の反応ガスを導入した後、上部の平板状
電極から高周波電力を投入すると、接地された試料載置
台と上部電極との間で放電が生じ、両電極間に反応ガス
のプラズマが生成される。このプラズマに試料載置台上
の試料を晒すことにより成膜が行なわれ、イオンやラジ
カルが試料面に強力に衝突することによりエッチングや
洗浄が行なわれる。[0003] In a conventional plasma surface treatment apparatus, a structure in which a sample mounting table is disposed below a reaction chamber and a plate-like electrode is disposed above and opposed to the sample mounting table is generally used. After placing the sample on the sample mounting table and introducing a reaction gas at a predetermined pressure into the evacuated reaction chamber and then applying high-frequency power from the upper plate-like electrode, the grounded sample mounting table and the upper electrode A discharge occurs between the electrodes, and a plasma of the reaction gas is generated between the two electrodes. Film formation is performed by exposing the sample on the sample mounting table to this plasma, and etching and cleaning are performed by strongly colliding ions and radicals on the sample surface.
【０００４】[0004]
【発明が解決しようとする課題】半導体チップは、専ら
シリコンウェハの１面にのみ成膜、エッチング等の加工
が行なわれるだけであるが、例えばハードディスクドラ
イブ用シークヘッドは、薄い弾性金属板（通常、厚さ0.
1mm程度のステンレスシートが用いられる）の両面に絶
縁シートを介して導体膜を積層した構造を有している。
上記従来のプラズマ表面処理装置では、このような場
合、片面に成膜を行なった後、一旦処理装置を停止して
試料を反転させ、再び成膜を行なうという方法を取らざ
るを得なかった。本発明は、このような場合に一度で両
面に加工を行なうことができるプラズマ表面処理装置を
提供するものである。A semiconductor chip is formed only on one surface of a silicon wafer by a process such as film formation and etching. For example, a seek head for a hard disk drive has a thin elastic metal plate (usually a thin metal plate). , Thickness 0.
(A stainless steel sheet of about 1 mm is used)).
In such a conventional plasma surface treatment apparatus, in such a case, after forming a film on one side, it is necessary to stop the processing apparatus, invert the sample, and perform the film formation again. The present invention provides a plasma surface treatment apparatus capable of performing processing on both surfaces at once in such a case.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に成された本発明に係るプラズマ表面処理装置は、開口
を有する平板状導体である中央電極と、該中央電極の両
側に所定距離を置いて配置された第１及び第２対向電極
と、を備えることを特徴とするものである。A plasma surface treatment apparatus according to the present invention, which has been made to solve the above-mentioned problems, has a center electrode which is a flat conductor having an opening, and a predetermined distance between both sides of the center electrode. And a first and a second counter electrode placed side by side.
【０００６】[0006]
【発明の実施の形態】中央電極の開口に、処理対象であ
る試料を固定する。試料は導体又は半導体をベースとし
たものとし、電気的に中央電極に接続される。中央電極
を接地し、第１及び第２対向電極をそれぞれ高周波電源
に接続する。処理室を一旦真空にした後、必要な処理ガ
スを処理室に導入し、所定の圧力となるように調整す
る。その後、第１及び第２対向電極に高周波電力を投入
すると、第１対向電極と試料の間、及び第２対向電極と
試料との間にそれぞれプラズマが生成し、試料は両面か
らイオン及びラジカルの照射を受けて成膜、エッチン
グ、洗浄等の処理が行なわれる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A sample to be processed is fixed in an opening of a center electrode. The sample is based on a conductor or semiconductor and is electrically connected to the central electrode. The center electrode is grounded, and the first and second counter electrodes are respectively connected to a high frequency power supply. After the processing chamber is once evacuated, a necessary processing gas is introduced into the processing chamber and adjusted to a predetermined pressure. Thereafter, when high-frequency power is applied to the first and second counter electrodes, plasma is generated between the first counter electrode and the sample, and between the second counter electrode and the sample, respectively, and the sample forms ions and radicals from both surfaces. Upon irradiation, processes such as film formation, etching, and cleaning are performed.
【０００７】上記では高周波プラズマにより説明を行な
ったが、本発明は単に試料の上下面でプラズマを発生さ
せる方法を提供するものであるため、直流プラズマ、マ
イクロ波プラズマ等、その他各種プラズマ処理装置に対
しても同様に適用することができる。Although the above description has been made with reference to high-frequency plasma, the present invention merely provides a method for generating plasma on the upper and lower surfaces of a sample. The same can be applied to this.
【０００８】[0008]
【実施例】本発明の一実施例であるプラズマドライクリ
ーナーを図１〜図３により説明する。図１に示すよう
に、本実施例のプラズマドライクリーナー１０は直方体
形状を有する反応室１１と、それと同一の筐体内に設け
られた制御部１２とから成る。反応室１１の内壁の両側
面には後述のトレイ２０を挿入するためのレール１３が
複数段設けられており、内壁の後面には４列のブスバー
１４、１５が設けられている。４列のブスバー１４、１
５は中央側の２列が高周波側１４、外側の２列が接地側
１５となっており、各ブスバー１４、１５にはレール１
３の高さに合わせた位置にトレイの端子を挿入するため
の挿入口１４１、１５１（図２）が設けられている。各
挿入口１４１、１５１の中には、後述のトレイ側端子が
挿入されたときに接触を確実にするため、弾性保持手段
が設けられている。DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma dry cleaner according to an embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 1, the plasma dry cleaner 10 of the present embodiment includes a reaction chamber 11 having a rectangular parallelepiped shape, and a control unit 12 provided in the same housing as the reaction chamber. On both sides of the inner wall of the reaction chamber 11, there are provided a plurality of rails 13 for inserting trays 20, which will be described later. Four bus bars 14 and 15 are provided on the rear surface of the inner wall. Four rows of busbars 14, 1
5 is a high-frequency side 14 in the center two rows and a ground side 15 in the outer two rows.
3, insertion holes 141 and 151 (FIG. 2) for inserting terminals of the tray are provided at positions corresponding to the height of the tray. An elastic holding means is provided in each of the insertion openings 141 and 151 to ensure contact when a tray-side terminal described later is inserted.
【０００９】制御部１２には、高周波側端子にプラズマ
発生用高周波電力（通常、１３．５６ＭＨｚ）を供給す
るための高周波ユニットや、本クリーナー全体の動作を
制御するための制御回路が納められている。The control unit 12 contains a high-frequency unit for supplying high-frequency power for plasma generation (generally 13.56 MHz) to a high-frequency terminal and a control circuit for controlling the operation of the entire cleaner. I have.
【００１０】反応室１１内に装入するトレイ２０には、
構造及び機能の異なる複数の種類が備えられている。ま
ず、使用される電極の極性により、高周波側トレイ２１
と接地側トレイ２２の２種類に分けられる。図２（ａ）
（ｂ）に示すように、両者は全体の大きさが同じであ
り、双方とも反応室１１のいずれの段のレール１３にも
区別なく差し込むことができるが、後方の辺に設けられ
た端子２４、２５の突出位置が異なる。すなわち、高周
波側トレイ２１の端子２４は高周波側ブスバー１４の挿
入口１４１に適合するように中央寄りに設けられてお
り、接地側トレイ２２の端子２５は接地側ブスバー１５
の挿入口１５１に適合するように外側寄りに設けられて
いる。従って、高周波側トレイ２１を反応室１１のレー
ル１３に沿って押し込んだとき、トレイ２１の端子２４
は必ず高周波側ブスバー１４の挿入口１４１に入り、決
して接地側ブスバー１５の挿入口１５１に入ることはな
い。逆に、接地側トレイ２２を装入したときは、その端
子２５は必ず接地側ブスバー１５の挿入口１５１に入
り、決して高周波側ブスバー１４の挿入口１４１に入る
ことはない。The tray 20 charged in the reaction chamber 11 includes:
A plurality of types having different structures and functions are provided. First, depending on the polarity of the electrode used, the high frequency side tray 21
And a ground-side tray 22. FIG. 2 (a)
As shown in (b), both have the same overall size, and both can be inserted into the rails 13 of any stage of the reaction chamber 11 without distinction, but the terminals 24 provided on the rear side are provided. , 25 have different projection positions. That is, the terminal 24 of the high frequency side tray 21 is provided near the center so as to fit the insertion port 141 of the high frequency side bus bar 14, and the terminal 25 of the ground side tray 22 is connected to the ground side bus bar 15.
Is provided on the outer side so as to be fitted to the insertion opening 151. Therefore, when the high frequency side tray 21 is pushed along the rail 13 of the reaction chamber 11, the terminal 24 of the tray 21
Always enters the insertion port 141 of the high-frequency busbar 14 and never enters the insertion port 151 of the ground-side busbar 15. Conversely, when the ground side tray 22 is inserted, the terminal 25 always enters the insertion port 151 of the ground side bus bar 15 and never enters the insertion port 141 of the high frequency side bus bar 14.
【００１１】反応室１１の筐体は接地されているため、
高周波側トレイ２１は、レール１３に接触するフレーム
２１１と、絶縁部材２１２を介してフレーム２１１の内
部に固定された被洗浄物載置板２１３から成る（図２
（ａ））。この被洗浄物載置板２１３がプラズマ生成の
ための高周波側電極となるものであり、高周波側ブスバ
ー１４に挿入されるトレイ端子２４はこの被洗浄物載置
板２１３から後方に突出している。なお、接地側トレイ
２２は電気的に浮遊させる必要はなく、電気的に一体の
金属体で構成することができる（図２（ｂ））。Since the housing of the reaction chamber 11 is grounded,
The high-frequency side tray 21 includes a frame 211 that contacts the rail 13 and an object-to-be-cleaned mounting plate 213 fixed inside the frame 211 via an insulating member 212 (FIG. 2).
(A)). The object-to-be-cleaned mounting plate 213 serves as a high-frequency side electrode for plasma generation, and the tray terminal 24 inserted into the high-frequency side bus bar 14 protrudes rearward from the object-to-be-cleaned object mounting plate 213. The ground side tray 22 does not need to be electrically floated, and can be made of an electrically integrated metal body (FIG. 2B).
【００１２】トレイは、形状面からは、単純な平板状の
トレイ、グリッド状のトレイ、そして中央に開口を有す
る開口トレイに分けられる。The trays are divided into simple flat trays, grid-shaped trays, and open trays having an opening at the center in terms of shape.
【００１３】これら各種トレイを適宜組み合わせること
により、多様な種類の物品を各種モードで洗浄すること
ができるが、ここでは開口トレイを用いた両面洗浄モー
ドについて説明する。By appropriately combining these various trays, various types of articles can be cleaned in various modes. Here, a double-sided cleaning mode using an opening tray will be described.
【００１４】図３（ｂ）に示すように、上下に接地側ト
レイ４１、４３を配置し、その間に高周波側とした開口
トレイ４２を挿入して、その開口部４２１に金属ベース
の被洗浄物４２２を載置する。金属ベースの被洗浄物４
２２の一例としては、ハードディスクドライブ用シーク
ヘッドを挙げることができる。これは、ステンレスの薄
いシート４２６をベースとし、その両面にポリイミドフ
ィルム４２７を介して電極層４２８が形成された構造を
有する。多数のシークヘッドが２次元的に配列されたシ
ートを開口トレイ４２の開口部４２１に置き、ベースと
なるステンレスシート４２６と開口トレイ４２とを電気
的に接続させる。As shown in FIG. 3B, ground-side trays 41 and 43 are arranged above and below, and an opening tray 42 on the high-frequency side is inserted between the trays, and a metal-based object to be cleaned is inserted into the opening 421. 422 is placed. Metal-based cleaning object 4
An example of 22 is a seek head for a hard disk drive. This has a structure in which an electrode layer 428 is formed on both sides of a thin stainless steel sheet 426 via a polyimide film 427. A sheet in which a number of seek heads are two-dimensionally arranged is placed in the opening 421 of the opening tray 42, and the stainless sheet 426 serving as a base and the opening tray 42 are electrically connected.
【００１５】このように被洗浄物４２２を開口部４２１
に固定した開口トレイ４２をレール１３に沿って反応室
１１に装入し、トレイ４２の端子４２４を高周波側ブス
バー１４の挿入口１４１に挿入する。反応室１１の扉を
閉め、内部を一旦真空にした後、アルゴンＡｒ、窒素Ｎ
2等の洗浄ガスを所定の圧力となるまで反応室１１内に
導入する。高周波側ブスバー１４を介して開口トレイ４
２に１３．５６ＭＨｚの高周波電力を投入すると、上下
の接地側トレイ４１、４３と被洗浄物４２２との間で放
電が生じ、被洗浄物４２２の両面で洗浄ガスのプラズマ
が生成される。これらは上下面からそれぞれ被洗浄物４
２２の表面に照射され、被洗浄物４２２の表面の汚れを
物理的及び化学的に除去する。このように、本実施例の
プラズマドライクリーナーでは両面の洗浄が一挙に行な
われるため、被洗浄物４２２を置き換えるための真空引
き等の時間を考慮すると、従来のように片面ずつ洗浄し
ていた場合と比較して洗浄時間を半分以下に低減するこ
とができる。As described above, the object to be cleaned 422 is placed in the opening 421.
The tray 42 is inserted into the reaction chamber 11 along the rail 13 and the terminal 424 of the tray 42 is inserted into the insertion port 141 of the high-frequency bus bar 14. After closing the door of the reaction chamber 11 and once evacuating the inside, argon Ar, nitrogen N
A cleaning gas such as 2 is introduced into the reaction chamber 11 until a predetermined pressure is reached. Opening tray 4 via high-frequency busbar 14
When a high frequency power of 13.56 MHz is applied to 2, discharge occurs between the upper and lower ground-side trays 41 and 43 and the object 422 to be cleaned, and a plasma of a cleaning gas is generated on both surfaces of the object 422 to be cleaned. These are to be cleaned 4
Irradiation is performed on the surface of the cleaning object 22 to physically and chemically remove dirt on the surface of the cleaning object 422. As described above, in the plasma dry cleaner of this embodiment, since both surfaces are cleaned at a time, when the time for evacuation or the like for replacing the object to be cleaned 422 is taken into consideration, the cleaning is performed one by one as in the related art. The cleaning time can be reduced to half or less as compared with the case of FIG.
【００１６】ここでは洗浄装置の例を挙げて説明した
が、本発明は半導体や光学レンズ等の洗浄にとどまら
ず、半導体チップ上への導体層や絶縁層の成膜・積層、
半導体製造の際のパターンエッチング、強力なエッチン
グ作用によるマイクロマシーニング等、従来行なわれて
いたあらゆるプラズマ表面処理装置に対して適用するこ
とが可能である。また、当業者であれば容易に理解でき
る通り、本発明は単に試料の上下面でプラズマを発生さ
せる方法を提供するものであるため、上記のような高周
波プラズマのみならず、直流プラズマ、マイクロ波プラ
ズマ等、各種プラズマ処理装置に対して適用することが
できる。Although the present invention has been described with reference to an example of a cleaning apparatus, the present invention is not limited to cleaning semiconductors and optical lenses, but also forms and laminates a conductive layer and an insulating layer on a semiconductor chip.
The present invention can be applied to any conventional plasma surface treatment apparatus, such as pattern etching during semiconductor manufacturing and micromachining by a strong etching action. In addition, as can be easily understood by those skilled in the art, the present invention merely provides a method for generating plasma on the upper and lower surfaces of a sample. The present invention can be applied to various plasma processing apparatuses such as plasma.
【００１７】[0017]
【発明の効果】本発明に係るプラズマ表面処理装置で
は、両面の処理を一度に行なうことができるため、従来
のように片面ずつ処理を行なう場合と比較すると、処理
時間は少なくとも半分に低減することができる。さら
に、片面を処理した後、一旦真空を破り、被処理物を反
転させて再度真空引きを行なって処理を行なうという手
動作業を行なう場合には、処理時間の低減効果はより大
きなものとなる。もちろん、真空を破ることなく、この
ような反転作業をマニピュレータ等で自動的に行なうこ
とも可能であるが、装置のコストが大幅に上昇する上、
反転時間も考慮しなければならないため、本発明に係る
装置は依然大きな優位に立つ。According to the plasma surface treatment apparatus of the present invention, since the treatment on both surfaces can be performed at once, the treatment time can be reduced by at least half as compared with the conventional case where the treatment is performed on one surface at a time. Can be. Further, in the case of performing a manual operation of once breaking the vacuum after processing one side, inverting the object to be processed, and performing vacuum evacuation and performing the processing again, the effect of reducing the processing time becomes greater. Of course, such a reversing operation can be automatically performed by a manipulator or the like without breaking the vacuum, but the cost of the apparatus increases significantly.
Since the reversal time must also be taken into account, the device according to the invention still has a great advantage.
【図１】 本発明の一実施例であるプラズマドライクリ
ーナーの一部断面斜視図。FIG. 1 is a partial cross-sectional perspective view of a plasma dry cleaner according to one embodiment of the present invention.
【図２】 高周波側トレイ（ａ）及び接地側トレイ
（ｂ）とブスバーの関係を示す斜視図。FIG. 2 is a perspective view showing a relationship between a high frequency side tray (a) and a ground side tray (b) and a bus bar.
【図３】 開口トレイの斜視図（ａ）と使用時の反応室
の断面図（ｂ）。FIG. 3A is a perspective view of an open tray, and FIG. 3B is a cross-sectional view of a reaction chamber in use.
１０…プラズマドライクリーナー １１…反応室 １２…制御部 １３…レール ２０、２１、２２、４１、４３…トレイ ４２…開口トレイ ４２１…開口部 ４２４…端子 ４２２…被洗浄物（ハードディスクドライブ用シークヘ
ッド） ４２６…ステンレスベースシート ４２７…ポリイミドフィルム ４２８…電極層DESCRIPTION OF SYMBOLS 10 ... Plasma dry cleaner 11 ... Reaction chamber 12 ... Control part 13 ... Rail 20,21,22,41,43 ... Tray 42 ... Opening tray 421 ... Opening 424 ... Terminal 422 ... Washed thing (seek head for hard disk drive) 426: stainless steel base sheet 427: polyimide film 428: electrode layer
フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/304 ３４１ Ｈ０１Ｌ 21/302 Ｂ Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/304 341 H01L 21/302 B
Claims (1)
と、該中央電極の両側に所定距離を置いて配置された第
１及び第２対向電極と、を備えることを特徴とするプラ
ズマ表面処理装置。1. A plasma surface treatment comprising: a central electrode which is a plate-shaped conductor having an opening; and first and second opposing electrodes disposed at a predetermined distance on both sides of the central electrode. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20089397A JP3813313B2 (en) | 1997-07-09 | 1997-07-09 | Plasma surface treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20089397A JP3813313B2 (en) | 1997-07-09 | 1997-07-09 | Plasma surface treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1131600A true JPH1131600A (en) | 1999-02-02 |
| JP3813313B2 JP3813313B2 (en) | 2006-08-23 |
Family
ID=16432014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20089397A Expired - Lifetime JP3813313B2 (en) | 1997-07-09 | 1997-07-09 | Plasma surface treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3813313B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100462772B1 (en) * | 2002-12-02 | 2004-12-23 | 에이치아이티 주식회사 | Cleaning apparatus using plasma |
| JP2012507172A (en) * | 2008-10-31 | 2012-03-22 | コミサリヤ・ア・レネルジ・アトミク・エ・オ・エネルジ・アルテルナテイブ | Method for forming a single crystal film in the field of microelectronics |
-
1997
- 1997-07-09 JP JP20089397A patent/JP3813313B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100462772B1 (en) * | 2002-12-02 | 2004-12-23 | 에이치아이티 주식회사 | Cleaning apparatus using plasma |
| JP2012507172A (en) * | 2008-10-31 | 2012-03-22 | コミサリヤ・ア・レネルジ・アトミク・エ・オ・エネルジ・アルテルナテイブ | Method for forming a single crystal film in the field of microelectronics |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3813313B2 (en) | 2006-08-23 |
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