JPH11307606A - Evaluating method and device for substrate heat treatment equipment - Google Patents
Evaluating method and device for substrate heat treatment equipmentInfo
- Publication number
- JPH11307606A JPH11307606A JP10912298A JP10912298A JPH11307606A JP H11307606 A JPH11307606 A JP H11307606A JP 10912298 A JP10912298 A JP 10912298A JP 10912298 A JP10912298 A JP 10912298A JP H11307606 A JPH11307606 A JP H11307606A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- measurement
- heat treatment
- treatment apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体製造プロ
セスや液晶表示装置（ＬＣＤ）、フォトマスク、光ディ
スク等の製造プロセスなどにおいて、化学増幅型レジス
トが塗布された基板を露光後にベーク処理（ＰＥＢ処
理）したり、基板の表面にＳＯＧ材等のシリカ系被膜形
成用塗布液、フォトレジストなどの塗布液を塗布した後
に基板を熱処理したりする場合などに使用される基板熱
処理装置の熱特性を評価する方法、特に、基板を熱処理
する際の基板面における温度均一性を評価する基板熱処
理装置の評価方法、ならびに、その評価方法を実施する
ために使用される基板熱処理装置の評価装置に関する。The present invention relates to a baking process (PEB process) after exposing a substrate coated with a chemically amplified resist in a semiconductor manufacturing process or a manufacturing process of a liquid crystal display (LCD), a photomask, an optical disk or the like. Evaluation of thermal characteristics of a substrate heat treatment apparatus used when applying a coating solution for forming a silica-based film such as SOG material or a photoresist on a surface of the substrate and then performing a heat treatment on the substrate. More particularly, the present invention relates to an evaluation method of a substrate heat treatment apparatus for evaluating temperature uniformity on a substrate surface when a substrate is heat-treated, and an evaluation apparatus of a substrate heat treatment apparatus used for performing the evaluation method.
【０００２】[0002]
【従来の技術】ホットプレートを備えた基板熱処理装置
により基板、例えば半導体基板を熱処理する際の基板面
における温度均一性の評価は、従来、測温用基板を用い
て次のようにして行われていた。すなわち、熱電対や測
温抵抗体が複数位置に埋め込まれたり貼り付けられたり
した測温用基板を基板熱処理装置内に設置して、複数の
測定点におけるそれぞれの温度を測定することにより、
基板面における温度均一性を評価するようにしていた。
基板面における測定点の数としては、通常９〜１７点で
あり、３００ｍｍ程度の大型の基板では、例えば３１点
である。2. Description of the Related Art Evaluation of temperature uniformity on a substrate surface when a substrate, for example, a semiconductor substrate is heat-treated by a substrate heat treatment apparatus having a hot plate is conventionally performed using a temperature measuring substrate as follows. I was That is, by installing a temperature measuring substrate in which a thermocouple or a temperature measuring resistor is embedded or attached at a plurality of positions in a substrate heat treatment apparatus, and by measuring the respective temperatures at a plurality of measurement points,
The temperature uniformity on the substrate surface was evaluated.
The number of measurement points on the substrate surface is usually 9 to 17 points, and for a large substrate of about 300 mm, for example, 31 points.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、測温用
基板を用いた従来の評価方法では、熱電対や測温抵抗体
を計測器に接続するための電気配線が必要である。この
ため、測温用基板を熱処理装置内に設置するまでに時間
がかかるので、その間に基板面の温度が十分に安定して
しまい、その安定状態での基板の各測定点における温度
を測定して、その測定結果から基板面における温度均一
性の評価が行われていた。このように、従来は、実際に
基板が熱処理される状態での温度測定によって温度均一
性の評価が行われるのではないため、評価の結果では基
板面における温度均一性が良いのに、実際に熱処理され
て最終的に得られた基板は、レジスト膜面における回路
パターンの線幅均一性が悪い、といった矛盾を生じるこ
とになる。特に、近年、半導体デバイスの高集積化に伴
って回路パターンを高精細化する技術が求められてお
り、この要求に応えるために、化学増幅型レジストを使
用することが行われているが、この化学増幅型レジスト
が塗布された基板を露光後にベーク処理（ＰＥＢ処理）
する際には、高い温度均一性が求められるが、従来の評
価方法では、その評価結果と実際に基板を熱処理したと
きの処理結果とが対応していない、といったことがしば
しば起こる。However, the conventional evaluation method using a temperature measuring substrate requires an electric wiring for connecting a thermocouple or a temperature measuring resistor to a measuring instrument. For this reason, it takes time before the temperature measurement substrate is installed in the heat treatment apparatus, and during that time, the temperature of the substrate surface is sufficiently stabilized, and the temperature at each measurement point of the substrate in the stable state is measured. Thus, the temperature uniformity on the substrate surface was evaluated from the measurement results. As described above, conventionally, the evaluation of temperature uniformity is not performed by temperature measurement in a state where the substrate is actually heat-treated. The substrate finally obtained by the heat treatment causes inconsistency that the line width uniformity of the circuit pattern on the resist film surface is poor. In particular, in recent years, a technique for making a circuit pattern highly precise has been required in accordance with high integration of a semiconductor device, and in order to meet this demand, a chemically amplified resist has been used. Bake treatment (PEB treatment) after exposing the substrate coated with chemically amplified resist
In this case, high temperature uniformity is required, but in the conventional evaluation method, the evaluation result often does not correspond to the processing result when the substrate is actually heat-treated.
【０００４】一方、実際に基板が熱処理される状態での
基板面の温度測定を行おうとすると、搬送ロボットによ
る基板のハンドリング操作が必要となるが、従来の測温
用基板には、上記したように電気配線が施されているた
め、搬送ロボットによるハンドリング操作が困難であ
る。したがって、実際に基板が熱処理される状態での基
板面の温度測定は、極めて難しく、例えそれが可能であ
るとしても、１枚のみの測温用基板の温度測定を行うこ
とができるだけであって、実際には複数枚の基板が連続
して基板熱処理装置内で熱処理されることから、１枚の
みの測温用基板の温度測定では、基板熱処理装置の評価
方法としては不十分である。On the other hand, to measure the temperature of the substrate surface while the substrate is actually subjected to a heat treatment, a handling operation of the substrate by a transfer robot is required. , Electrical handling is difficult, and handling operation by a transfer robot is difficult. Therefore, it is extremely difficult to measure the temperature of the substrate surface in a state where the substrate is actually heat-treated. Even if it is possible, it is only possible to measure the temperature of only one temperature measurement substrate. Actually, since a plurality of substrates are successively heat-treated in the substrate heat treatment apparatus, measuring the temperature of only one substrate for temperature measurement is not sufficient as an evaluation method of the substrate heat treatment apparatus.
【０００５】この発明は、以上のような事情に鑑みてな
されたものであり、基板熱処理装置により実際に基板を
熱処理する状態での基板面における温度均一性の評価を
行うことが可能であって、従来の方法に比べて、評価の
結果と実際に基板を熱処理したときの処理結果との相関
性が良好である基板熱処理装置の評価方法、ならびに、
その評価方法を好適に実施することができる基板熱処理
装置の評価装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and it is possible to evaluate temperature uniformity on a substrate surface in a state where a substrate is actually heat-treated by a substrate heat treatment apparatus. , Compared with the conventional method, the evaluation method of the substrate heat treatment apparatus having a good correlation between the evaluation result and the processing result when the substrate is actually heat-treated, and
It is an object of the present invention to provide an evaluation apparatus for a substrate heat treatment apparatus capable of suitably performing the evaluation method.
【０００６】[0006]
【課題を解決するための手段】請求項１に係る発明は、
基板熱処理装置により測温用基板の熱処理を行って前記
測温用基板上の複数の測定点の温度を測定し、その測定
結果から前記基板熱処理装置により基板を熱処理する際
の基板面における温度均一性を評価する基板熱処理装置
の評価方法であって、前記測温用基板上の複数の測定点
における温度検出信号を、前記測温用基板に設けられた
送信器と計測器に接続された受信器との間の無線通信に
より計測器へ送るようにすることを特徴とする。The invention according to claim 1 is
The substrate for heat measurement is subjected to heat treatment by a substrate heat treatment device to measure the temperature at a plurality of measurement points on the substrate for temperature measurement, and from the measurement results, the temperature uniformity on the substrate surface when the substrate is subjected to heat treatment by the substrate heat treatment device An evaluation method of a substrate heat treatment apparatus for evaluating the temperature, wherein a temperature detection signal at a plurality of measurement points on the temperature measurement substrate is received by a transmitter provided on the temperature measurement substrate and a reception device connected to the measurement device. It is characterized by transmitting to a measuring instrument by wireless communication with the measuring instrument.
【０００７】請求項２に係る発明は、基板熱処理装置に
より測温用基板の熱処理を行って前記測温用基板上の複
数の測定点の温度を測定し、その測定結果から前記基板
熱処理装置により基板を熱処理する際の基板面における
温度均一性を評価する基板熱処理装置の評価方法であっ
て、前記測温用基板上の複数の測定点における温度検出
信号のデータを、前記測温用基板に設けられたメモリ部
に記憶させ、前記測温用基板の熱処理が終了した後に、
メモリ部と計測器とを接続させて、メモリ部に記憶され
た温度検出信号のデータを取り出すようにすることを特
徴とする。According to a second aspect of the present invention, a temperature measurement substrate is heat-treated by a substrate heat treatment apparatus to measure temperatures at a plurality of measurement points on the temperature measurement substrate. A method for evaluating a substrate heat treatment apparatus for evaluating temperature uniformity on a substrate surface when heat treating a substrate, wherein data of a temperature detection signal at a plurality of measurement points on the temperature measurement substrate is transmitted to the temperature measurement substrate. After the heat treatment of the temperature measurement substrate is completed,
It is characterized in that the memory unit and the measuring device are connected to take out the data of the temperature detection signal stored in the memory unit.
【０００８】請求項３に係る発明は、複数の測定点にそ
れぞれ温度検出部が配設された測温用基板と、この測温
用基板の前記各温度検出部の温度検出信号を受けて測温
用基板上の複数の測定点の温度を計測する計測器とを備
え、基板熱処理装置により前記測温用基板の熱処理を行
ったときの測定結果から、前記基板熱処理装置により基
板を熱処理する際の基板面における温度均一性を評価す
る基板熱処理装置の評価装置であって、前記測温用基板
に、前記各温度検出部の温度検出信号をそれぞれ無線で
送信する送信器を設けるとともに、前記計測器に、前記
送信器から送られた温度検出信号を受信する受信器を接
続したことを特徴とする。According to a third aspect of the present invention, there is provided a temperature measurement substrate having a plurality of temperature detection units disposed at a plurality of measurement points, and a temperature measurement signal received from each of the temperature detection units of the temperature measurement substrate. And a measuring device for measuring the temperature of a plurality of measurement points on the substrate for warming, when the substrate is heat-treated by the substrate heat-treating device from the measurement result when the substrate for heat-treating is heat-treated by the substrate heat-treating device. An evaluation device for a substrate heat treatment apparatus for evaluating temperature uniformity on a substrate surface, wherein a transmitter for wirelessly transmitting a temperature detection signal of each of the temperature detection units is provided on the temperature measurement substrate, and the measurement is performed. And a receiver for receiving the temperature detection signal sent from the transmitter.
【０００９】請求項４に係る発明は、複数の測定点にそ
れぞれ温度検出部が配設された測温用基板と、この測温
用基板の前記各温度検出部の温度検出信号を受けて測温
用基板上の複数の測定点の温度を計測する計測器とを備
え、基板熱処理装置により前記測温用基板の熱処理を行
ったときの測定結果から、前記基板熱処理装置により基
板を熱処理する際の基板面における温度均一性を評価す
る基板熱処理装置の評価装置であって、前記測温用基板
に、前記各温度検出部の温度検出信号のデータをそれぞ
れ記憶するメモリ部を設けるとともに、前記計測器に、
その計測器と前記メモリ部とを接続させてメモリ部に記
憶された温度検出信号のデータを取り出すためのコネク
タを設けたことを特徴とする。According to a fourth aspect of the present invention, there is provided a temperature measurement board having a plurality of temperature detection units disposed at a plurality of measurement points, and measuring the temperature by receiving temperature detection signals from the temperature detection units of the temperature measurement board. And a measuring device for measuring the temperature of a plurality of measurement points on the substrate for warming, when the substrate is heat-treated by the substrate heat-treating device from the measurement result when the substrate for heat-treating is heat-treated by the substrate heat-treating device. An evaluation device for a substrate heat treatment apparatus for evaluating temperature uniformity on a substrate surface, wherein a memory unit for storing data of a temperature detection signal of each of the temperature detection units is provided on the temperature measurement substrate, and the measurement is performed. In the vessel,
A connector is provided for connecting the measuring instrument to the memory unit and for extracting data of the temperature detection signal stored in the memory unit.
【００１０】請求項１に係る発明の基板熱処理装置の評
価方法においては、基板熱処理装置により測温用基板の
熱処理を行い、そのときの測温用基板上の複数の測定点
における温度検出信号を、測温用基板に設けられた送信
器から計測器に接続された受信器へ無線で送り、計測器
により測温用基板上の複数の測定点の温度が計測され
る。そして、測温用基板上の複数の測定点の温度から、
基板熱処理装置により基板を熱処理する際の基板面にお
ける温度均一性の評価が行われる。このように、この評
価方法では、測温用基板に対し、基板熱処理装置により
実際に熱処理される基板と同じ熱量が同じ状況で与えら
れて、その際の測温用基板上の測定点の温度が測定さ
れ、その測定結果から温度均一性の評価が行われるの
で、評価の結果と実際に熱処理したときの処理結果との
間に高い相関性が得られる。また、測温用基板と計測器
との間に電気配線が施されていないため、搬送ロボット
による測温用基板のハンドリング操作が可能である。し
たがって、実際に基板が熱処理される状態での基板面の
温度測定が可能であり、さらに、複数枚の基板を連続し
て熱処理する状態での基板面の温度測定も可能である。In the method for evaluating a substrate heat treatment apparatus according to the first aspect of the present invention, the substrate for heat measurement is heat-treated by the substrate heat treatment apparatus, and the temperature detection signals at a plurality of measurement points on the substrate for temperature measurement at that time are obtained. Then, the temperature is transmitted from a transmitter provided on the temperature measuring substrate to a receiver connected to the measuring device wirelessly, and the measuring device measures the temperatures at a plurality of measurement points on the temperature measuring substrate. Then, based on the temperatures at a plurality of measurement points on the temperature measurement substrate,
Evaluation of the temperature uniformity on the substrate surface when the substrate is heat-treated by the substrate heat treatment apparatus is performed. Thus, in this evaluation method, the same amount of heat as the substrate actually heat-treated by the substrate heat treatment apparatus is given to the temperature measurement substrate in the same situation, and the temperature of the measurement point on the temperature measurement substrate at that time is given. Is measured, and the temperature uniformity is evaluated from the measurement result. Therefore, a high correlation is obtained between the evaluation result and the processing result when the heat treatment is actually performed. Further, since no electric wiring is provided between the substrate for temperature measurement and the measuring instrument, the handling operation of the substrate for temperature measurement by the transfer robot is possible. Therefore, it is possible to measure the temperature of the substrate surface in a state where the substrate is actually heat-treated, and it is also possible to measure the temperature of the substrate surface in a state where a plurality of substrates are continuously heat-treated.
【００１１】請求項２に係る発明の基板熱処理装置の評
価方法においては、基板熱処理装置により測温用基板の
熱処理を行い、そのときの測温用基板上の複数の測定点
における温度検出信号のデータを、測温用基板に設けら
れたメモリ部に記憶させ、測温用基板の熱処理が終了し
た後に、メモリ部と計測器とを接続させ、メモリ部に記
憶されたデータを取り出して計測器により熱処理中の測
温用基板上の複数の測定点の温度が計測される。そし
て、測温用基板上の複数の測定点の温度から、基板熱処
理装置により基板を熱処理する際の基板面における温度
均一性の評価が行われる。このように、この評価方法で
は、測温用基板に対し、基板熱処理装置により実際に熱
処理される基板と同じ熱量が同じ状況で与えられて、そ
の熱処理中の測温用基板上の測定点の温度が測定され、
その測定結果から温度均一性の評価が行われるので、評
価の結果と実際に熱処理したときの処理結果との間に高
い相関性が得られる。また、測温用基板と計測器との間
に電気配線が施されていないため、搬送ロボットによる
測温用基板のハンドリング操作が可能である。したがっ
て、実際に基板が熱処理される状態での基板面の温度測
定が可能であり、さらに、複数枚の基板を連続して熱処
理する状態での基板面の温度測定も可能である。In the method for evaluating a substrate heat treatment apparatus according to a second aspect of the present invention, the substrate for heat measurement is subjected to heat treatment by the substrate heat treatment apparatus, and the temperature detection signals at a plurality of measurement points on the temperature measurement substrate at that time are measured. The data is stored in a memory unit provided on the substrate for temperature measurement, and after the heat treatment of the substrate for temperature measurement is completed, the memory unit and the measuring device are connected, and the data stored in the memory unit is taken out and the measuring device Thus, the temperatures at a plurality of measurement points on the temperature measurement substrate during the heat treatment are measured. Then, based on the temperatures at a plurality of measurement points on the temperature measurement substrate, the temperature uniformity on the substrate surface when the substrate is heat-treated by the substrate heat treatment apparatus is evaluated. Thus, in this evaluation method, the same amount of heat as the substrate actually heat-treated by the substrate heat treatment apparatus is given to the temperature-measuring substrate in the same situation, and the measurement point of the measurement point on the temperature-measuring substrate during the heat treatment is given. The temperature is measured,
Since the temperature uniformity is evaluated based on the measurement result, a high correlation is obtained between the evaluation result and the processing result when the heat treatment is actually performed. Further, since no electric wiring is provided between the substrate for temperature measurement and the measuring instrument, the handling operation of the substrate for temperature measurement by the transfer robot is possible. Therefore, it is possible to measure the temperature of the substrate surface in a state where the substrate is actually heat-treated, and it is also possible to measure the temperature of the substrate surface in a state where a plurality of substrates are continuously heat-treated.
【００１２】請求項３に係る発明の評価装置を使用して
基板熱処理装置の評価を行おうとするときは、測温用基
板を基板熱処理装置内に設置し、実際に基板を熱処理す
るときと同様にして測温用基板の熱処理を行う。測温用
基板が熱処理されると、そのときの測温用基板上の複数
の測定点における温度が、測温用基板に配設された各温
度検出部によりそれぞれ検出され、その温度検出信号
が、測温用基板に設けられた送信器から計測器に接続さ
れた受信器へ無線で送られ、計測器により測温用基板上
の複数の測定点の温度が計測される。そして、測温用基
板上の複数の測定点の温度から、基板熱処理装置により
基板を熱処理する際の基板面における温度均一性の評価
を行う。このように、この評価装置を使用した場合に
は、測温用基板に対し、基板熱処理装置により実際に熱
処理される基板と同じ熱量が同じ状況で与えられて、そ
の際の測温用基板上の測定点の温度が測定され、その測
定結果から温度均一性の評価が行われるので、評価の結
果と実際に熱処理したときの処理結果との間に高い相関
性が得られる。また、測温用基板と計測器との間に電気
配線が施されていないため、搬送ロボットによる測温用
基板のハンドリング操作が可能である。したがって、実
際に基板が熱処理される状態での基板面の温度測定が可
能であり、さらに、複数枚の基板を連続して熱処理する
状態での基板面の温度測定も可能である。When the substrate heat treatment apparatus is to be evaluated using the evaluation apparatus according to the third aspect of the present invention, the temperature measurement substrate is set in the substrate heat treatment apparatus, and the temperature measurement is performed in the same manner as when the substrate is actually heat-treated. Then, the heat treatment of the temperature measurement substrate is performed. When the temperature-measuring substrate is heat-treated, the temperatures at a plurality of measurement points on the temperature-measuring substrate at that time are respectively detected by the respective temperature detecting portions provided on the temperature-measuring substrate, and the temperature detection signals are obtained. Then, the data is wirelessly transmitted from a transmitter provided on the temperature measuring substrate to a receiver connected to the measuring device, and the measuring device measures the temperatures at a plurality of measurement points on the temperature measuring substrate. Then, based on the temperatures at a plurality of measurement points on the temperature measurement substrate, the temperature uniformity on the substrate surface when the substrate is heat-treated by the substrate heat treatment apparatus is evaluated. As described above, when this evaluation device is used, the same amount of heat as that of the substrate actually heat-treated by the substrate heat treatment device is given to the temperature measurement substrate in the same situation, and the temperature measurement substrate is heated at that time. Is measured, and the temperature uniformity is evaluated from the measurement result. Therefore, a high correlation is obtained between the evaluation result and the processing result when the heat treatment is actually performed. Further, since no electric wiring is provided between the substrate for temperature measurement and the measuring instrument, the handling operation of the substrate for temperature measurement by the transfer robot is possible. Therefore, it is possible to measure the temperature of the substrate surface in a state where the substrate is actually heat-treated, and it is also possible to measure the temperature of the substrate surface in a state where a plurality of substrates are continuously heat-treated.
【００１３】請求項４に係る発明の評価装置を使用して
基板熱処理装置の評価を行おうとするときは、測温用基
板を基板熱処理装置内に設置し、実際に基板を熱処理す
るときと同様にして測温用基板の熱処理を行う。測温用
基板が熱処理されると、そのときの測温用基板上の複数
の測定点における温度が、測温用基板に配設された各温
度検出部によりそれぞれ検出され、その温度検出信号の
データが、測温用基板に設けられたメモリ部に記憶され
る。測温用基板の熱処理が終了すると、測温用基板を基
板熱処理装置内から取り出し、計測器に設けられたコネ
クタにより、測温用基板のメモリ部と計測器とを接続さ
せる。これにより、メモリ部に記憶されたデータが取り
出され、計測器によって熱処理中の測温用基板上の複数
の測定点の温度が計測される。そして、測温用基板上の
複数の測定点の温度から、基板熱処理装置により基板を
熱処理する際の基板面における温度均一性の評価を行
う。このように、この評価装置を使用した場合には、測
温用基板に対し、基板熱処理装置により実際に熱処理さ
れる基板と同じ熱量が同じ状況で与えられて、その熱処
理中の測温用基板上の測定点の温度が測定され、その測
定結果から温度均一性の評価が行われるので、評価の結
果と実際に熱処理したときの処理結果との間に高い相関
性が得られる。また、測温用基板と計測器との間に電気
配線が施されていないため、搬送ロボットによる測温用
基板のハンドリング操作が可能である。したがって、実
際に基板が熱処理される状態での基板面の温度測定が可
能であり、さらに、複数枚の基板を連続して熱処理する
状態での基板面の温度測定も可能である。When the evaluation of the substrate heat treatment apparatus is to be performed using the evaluation apparatus of the invention according to claim 4, the temperature measurement substrate is set in the substrate heat treatment apparatus, and the same as when the substrate is actually heat treated. Then, the heat treatment of the temperature measurement substrate is performed. When the substrate for temperature measurement is heat-treated, the temperatures at a plurality of measurement points on the substrate for temperature measurement at that time are detected by the respective temperature detection units disposed on the substrate for temperature measurement, and the temperature detection signal The data is stored in a memory unit provided on the temperature measurement substrate. When the heat treatment of the temperature measurement substrate is completed, the temperature measurement substrate is taken out of the substrate heat treatment apparatus, and the memory unit of the temperature measurement substrate is connected to the measurement device by a connector provided on the measurement device. As a result, the data stored in the memory section is taken out, and the measuring device measures the temperatures of a plurality of measurement points on the temperature measurement substrate during the heat treatment. Then, based on the temperatures at a plurality of measurement points on the temperature measurement substrate, the temperature uniformity on the substrate surface when the substrate is heat-treated by the substrate heat treatment apparatus is evaluated. As described above, when this evaluation apparatus is used, the same amount of heat as the substrate actually heat-treated by the substrate heat treatment apparatus is given to the temperature measurement substrate in the same situation, and the temperature measurement substrate during the heat treatment is given. Since the temperature of the above measurement point is measured and the temperature uniformity is evaluated from the measurement result, a high correlation is obtained between the evaluation result and the processing result when the heat treatment is actually performed. Further, since no electric wiring is provided between the substrate for temperature measurement and the measuring instrument, the handling operation of the substrate for temperature measurement by the transfer robot is possible. Therefore, it is possible to measure the temperature of the substrate surface in a state where the substrate is actually heat-treated, and it is also possible to measure the temperature of the substrate surface in a state where a plurality of substrates are continuously heat-treated.
【００１４】[0014]
【発明の実施の形態】以下、この発明の好適な実施形態
について図面を参照しながら説明する。Preferred embodiments of the present invention will be described below with reference to the drawings.
【００１５】図１および図２は、この発明に係る基板熱
処理装置（以下、「ベークユニット」という）の評価方
法を実施するために使用される評価装置の構成の１例を
示し、図１は、評価装置の構成要素の１つである測温用
基板の平面図であり、図２は、評価装置の全体構成を示
す概略図である。FIGS. 1 and 2 show an example of the configuration of an evaluation apparatus used to carry out an evaluation method for a substrate heat treatment apparatus (hereinafter, referred to as a "bake unit") according to the present invention. FIG. 2 is a plan view of a substrate for temperature measurement, which is one of the components of the evaluation device, and FIG. 2 is a schematic diagram showing the entire configuration of the evaluation device.
【００１６】この評価装置は、測温用基板１０と計測器
１２とを備えて構成されている。測温用基板１０上に
は、複数の測定点が基板１０の全体に適当に分散するよ
うに、それぞれの測定点に熱電対あるいは測温抵抗体か
らなる温度検出部１４が配設されている。また、測温用
基板１０上には送信器１６が設けられており、各温度検
出部１４と送信器１６とがそれぞれ配線１８によって接
続されている。一方、計測器１２には、測温用基板１０
上の送信器１６から無線で送られる信号を受信する受信
器２０が接続されている。This evaluation apparatus is provided with a temperature measuring substrate 10 and a measuring device 12. On the substrate 10 for temperature measurement, a temperature detector 14 composed of a thermocouple or a resistance thermometer is disposed at each measurement point so that a plurality of measurement points are appropriately dispersed throughout the substrate 10. . A transmitter 16 is provided on the temperature measurement substrate 10, and each of the temperature detectors 14 and the transmitter 16 are connected by a wiring 18. On the other hand, the measuring device 12 includes a substrate 10 for temperature measurement.
A receiver 20 for receiving a signal wirelessly transmitted from the upper transmitter 16 is connected.
【００１７】上記した構成を有する評価装置を使用して
ベークユニットの評価を行うには、測温用基板１０をベ
ークユニット内に設置して加熱する。この加熱処理は、
実際に基板を熱処理するときと同様に通常の操作に従っ
て行えばよく、例えば９０℃〜１１０℃程度の温度で基
板を加熱する。測温用基板１０が加熱されると、そのと
きの測温用基板１０上の複数の測定点における温度が各
温度検出部１４によりそれぞれ検出され、その温度検出
信号が、測温用基板１０上の送信器１６から計測器１２
に接続された受信器２０へ無線で送られる。そして、計
測器１２に温度検出信号が入力されて、計測器１２によ
り測温用基板１０上の複数の測定点の温度が計測され、
測温用基板１０上の複数の測定点の温度から、ベークユ
ニットにより基板を熱処理する際の基板面における温度
均一性の評価を行い、その測定結果から、最終的に得ら
れる基板における回路パターンの線幅均一性を把握する
ことが可能になる。In order to evaluate the bake unit using the evaluation apparatus having the above-described configuration, the temperature measurement substrate 10 is placed in the bake unit and heated. This heat treatment
What is necessary is just to follow a normal operation similarly to the case of actually heat-treating a board | substrate, for example, heating a board | substrate at the temperature of about 90-110 degreeC. When the temperature measurement substrate 10 is heated, the temperatures at a plurality of measurement points on the temperature measurement substrate 10 at that time are respectively detected by the temperature detection units 14, and the temperature detection signals are transmitted to the temperature measurement substrate 10. From the transmitter 16 to the measuring instrument 12
Is wirelessly transmitted to the receiver 20 connected to. Then, a temperature detection signal is input to the measuring device 12, and the measuring device 12 measures the temperatures of a plurality of measurement points on the temperature measurement substrate 10,
From the temperatures at a plurality of measurement points on the temperature measurement substrate 10, the temperature uniformity on the substrate surface when the substrate is heat-treated by the bake unit is evaluated, and from the measurement result, the circuit pattern of the substrate finally obtained is obtained. It is possible to grasp the line width uniformity.
【００１８】次に、図３および図４は、評価装置の別の
構成例を示し、図３は、その構成要素の１つである測温
用基板の平面図であり、図４は、その全体構成を示す概
略図である。Next, FIGS. 3 and 4 show another example of the configuration of the evaluation apparatus. FIG. 3 is a plan view of a temperature measuring substrate which is one of the components, and FIG. It is the schematic which shows the whole structure.
【００１９】図３および図４に示した評価装置も、測温
用基板２２と計測器２４とを備えて構成されており、測
温用基板２２上には、熱電対あるいは測温抵抗体からな
る温度検出部２６が配設された複数の測定点が、測温用
基板２２の全体に適当に分散するように配置されてい
る。また、測温用基板２２上にはメモリ部２８が設けら
れており、各温度検出部２６とメモリ部２８とがそれぞ
れ配線３０によって接続されている。そして、各温度検
出部２６によって検出された温度検出信号のデータがそ
れぞれメモリ部２８に記憶されるようになっている。一
方、計測器２４にはコネクタ３４が設けられており、そ
のコネクタ３４を、測温用基板２２のメモリ部２８に設
けられたコネクタ差込み口３２に差し込むことにより、
計測器２４とメモリ部２８とが接続されて、メモリ部２
８に記憶された温度検出信号のデータが取り出されるよ
うになっている。図４は、メモリ部２８から温度検出信
号のデータを取り出している状態を示している。The evaluation device shown in FIGS. 3 and 4 is also provided with a temperature measuring substrate 22 and a measuring instrument 24. On the temperature measuring substrate 22, a thermocouple or a temperature measuring resistor is provided. The plurality of measurement points on which the temperature detectors 26 are disposed are arranged so as to be appropriately dispersed throughout the temperature measurement substrate 22. Further, a memory unit 28 is provided on the temperature measurement substrate 22, and each of the temperature detection units 26 and the memory unit 28 are connected by a wiring 30. Then, the data of the temperature detection signal detected by each temperature detection unit 26 is stored in the memory unit 28, respectively. On the other hand, the measuring instrument 24 is provided with a connector 34, and the connector 34 is inserted into a connector insertion port 32 provided in the memory unit 28 of the temperature measurement substrate 22.
The measuring unit 24 and the memory unit 28 are connected, and the memory unit 2
The data of the temperature detection signal stored in 8 is taken out. FIG. 4 shows a state in which the data of the temperature detection signal is extracted from the memory unit 28.
【００２０】図３および図４に示した構成を有する評価
装置を使用してベークユニットの評価を行うには、図１
および図２に示した評価装置を使用する場合と同様にし
て、測温用基板２２をベークユニット内に設置して加熱
する。測温用基板２２が加熱されると、そのときの測温
用基板２２上の複数の測定点における温度が各温度検出
部２６によりそれぞれ検出され、その温度検出信号のデ
ータが、測温用基板１０上のメモリ部２８に記憶され
る。そして、測温用基板２２の加熱を終了させてから、
測温用基板２２をベークユニット内から取り出し、図４
に示すように、計測器２４に設けられたコネクタ３４を
メモリ部２８のコネクタ差込み口３２に差し込んで、計
測器２４とメモリ部２８とを接続させる。これにより、
メモリ部２８に記憶された温度検出信号のデータが取り
出され、計測器２４によって加熱中の測温用基板２２上
の複数の測定点の温度が計測される。そして、測温用基
板２２上の複数の測定点の温度から、ベークユニットに
より基板を熱処理する際の基板面における温度均一性の
評価を行う。In order to evaluate the bake unit using the evaluation apparatus having the structure shown in FIGS. 3 and 4, FIG.
In the same manner as in the case where the evaluation device shown in FIG. 2 is used, the temperature measurement substrate 22 is placed in the bake unit and heated. When the temperature measurement substrate 22 is heated, the temperatures at a plurality of measurement points on the temperature measurement substrate 22 at that time are detected by the respective temperature detection units 26, and the data of the temperature detection signals are transmitted to the temperature measurement substrate 22. The data is stored in the memory unit 28 on the memory 10. After the heating of the temperature measurement substrate 22 is completed,
The substrate 22 for temperature measurement is taken out from the baking unit, and FIG.
As shown in (1), the connector 34 provided on the measuring instrument 24 is inserted into the connector insertion port 32 of the memory section 28, and the measuring instrument 24 and the memory section 28 are connected. This allows
The data of the temperature detection signal stored in the memory unit 28 is extracted, and the measuring device 24 measures the temperatures of a plurality of measurement points on the temperature measurement substrate 22 during heating. Then, based on the temperatures at a plurality of measurement points on the temperature measurement substrate 22, the temperature uniformity on the substrate surface when the substrate is heat-treated by the bake unit is evaluated.
【００２１】なお、図１および図２や図３および図４に
それぞれ示したような測温用基板１０、２２を複数枚用
意しておいて、搬送ロボットにより測温用基板１０、２
２をベークユニット内に搬入し、測温用基板１０、２２
を加熱処理した後、測温用基板１０、２２をベークユニ
ット内から搬出し、この操作を複数枚の測温用基板１
０、２２について繰り返しながら、上記した測温用基板
１０、２２上の測定点の温度測定を順次行うことによ
り、複数枚の基板を連続して熱処理する状態での基板面
における温度均一性の評価を行うこともできる。A plurality of temperature measuring substrates 10 and 22 as shown in FIGS. 1 and 2 and FIGS. 3 and 4 are prepared, and the temperature measuring substrates 10 and 2 are transferred by a transfer robot.
2 into the baking unit, and the temperature measurement substrates 10 and 22
After the heat treatment, the temperature measurement substrates 10 and 22 are unloaded from the baking unit, and this operation is performed on a plurality of temperature measurement substrates 1.
Evaluation of temperature uniformity on the substrate surface in a state where a plurality of substrates are continuously heat-treated by sequentially performing the temperature measurement of the measurement points on the temperature measurement substrates 10 and 22 while repeating steps 0 and 22. Can also be performed.
【００２２】[0022]
【発明の効果】請求項１および請求項２に係る各発明の
評価方法によるとそれぞれ、基板熱処理装置により実際
に基板を熱処理する状態での基板面における温度均一性
の評価を行うことが可能であり、また、複数枚の基板を
連続して熱処理する状態での基板面における温度均一性
の評価を行うことも可能であるため、従来の方法に比べ
て、評価の結果と実際に基板を熱処理したときの処理結
果との相関性が極めて良好である。According to the evaluation methods of the first and second aspects of the present invention, it is possible to evaluate the temperature uniformity on the substrate surface in a state where the substrate is actually heat-treated by the substrate heat treatment apparatus. Yes, and it is also possible to evaluate the temperature uniformity on the substrate surface in a state where a plurality of substrates are continuously heat-treated. The correlation with the processing result at the time of performing is very good.
【００２３】請求項３および請求項４に係る各発明の評
価装置を使用すると、請求項１および請求項２に係る各
発明の評価方法を好適に実施することができる。The use of the evaluation device of each of the inventions according to claims 3 and 4 enables the evaluation method of each invention of claims 1 and 2 to be suitably implemented.
【図１】この発明に係る基板熱処理装置の評価方法を実
施するために使用される評価装置の構成の１例を示し、
評価装置の構成要素の１つである測温用基板の平面図で
ある。FIG. 1 shows an example of a configuration of an evaluation apparatus used for carrying out an evaluation method of a substrate heat treatment apparatus according to the present invention;
FIG. 3 is a plan view of a temperature measurement substrate that is one of the components of the evaluation device.
【図２】図１に測温用基板を示した評価装置の全体構成
を示す概略図である。FIG. 2 is a schematic diagram showing an entire configuration of an evaluation apparatus in which a temperature measurement substrate is shown in FIG.
【図３】この発明に係る基板熱処理装置の評価方法を実
施するために使用される評価装置の別の構成例を示し、
評価装置の構成要素の１つである測温用基板の平面図で
ある。FIG. 3 shows another example of the configuration of an evaluation apparatus used to carry out the evaluation method of the substrate heat treatment apparatus according to the present invention;
FIG. 3 is a plan view of a temperature measurement substrate that is one of the components of the evaluation device.
【図４】図３に測温用基板を示した評価装置の全体構成
を示す概略図である。FIG. 4 is a schematic diagram showing an overall configuration of an evaluation device showing a temperature measurement substrate in FIG. 3;
１０、２２ 測温用基板 １２、２４ 計測器 １４、２６ 温度検出部 １６ 送信器 １８、３０ 配線 ２０ 受信器 ２８ メモリ部 ３２ コネクタ差込み口 ３４ コネクタ 10, 22 Temperature measuring board 12, 24 Measuring instrument 14, 26 Temperature detecting section 16 Transmitter 18, 30 Wiring 20 Receiver 28 Memory section 32 Connector insertion port 34 Connector
Claims (4)
理を行って前記測温用基板上の複数の測定点の温度を測
定し、その測定結果から前記基板熱処理装置により基板
を熱処理する際の基板面における温度均一性を評価する
基板熱処理装置の評価方法であって、 前記測温用基板上の複数の測定点における温度検出信号
を、前記測温用基板に設けられた送信器と計測器に接続
された受信器との間の無線通信により計測器へ送るよう
にすることを特徴とする基板熱処理装置の評価方法。1. A method for performing a heat treatment on a substrate for temperature measurement by a substrate heat treatment apparatus to measure the temperature of a plurality of measurement points on the substrate for temperature measurement, and using the measurement result to heat-treat the substrate by the substrate heat treatment apparatus. A method for evaluating a substrate heat treatment apparatus for evaluating temperature uniformity on a substrate surface, comprising: a temperature detection signal at a plurality of measurement points on the temperature measurement substrate; a transmitter and a measurement device provided on the temperature measurement substrate A method for evaluating a substrate heat treatment apparatus, comprising: transmitting a signal to a measuring instrument by wireless communication with a receiver connected to the measuring apparatus.
理を行って前記測温用基板上の複数の測定点の温度を測
定し、その測定結果から前記基板熱処理装置により基板
を熱処理する際の基板面における温度均一性を評価する
基板熱処理装置の評価方法であって、 前記測温用基板上の複数の測定点における温度検出信号
のデータを、前記測温用基板に設けられたメモリ部に記
憶させ、前記測温用基板の熱処理が終了した後に、メモ
リ部と計測器とを接続させて、メモリ部に記憶された温
度検出信号のデータを取り出すようにすることを特徴と
する基板熱処理装置の評価方法。2. A method for performing a heat treatment on a substrate for temperature measurement by a substrate heat treatment apparatus to measure temperatures at a plurality of measurement points on the substrate for temperature measurement, and using the measurement result to heat-treat the substrate by the substrate heat treatment apparatus. A method for evaluating a substrate heat treatment apparatus for evaluating temperature uniformity on a substrate surface, wherein data of a temperature detection signal at a plurality of measurement points on the substrate for temperature measurement is stored in a memory unit provided on the substrate for temperature measurement. A substrate heat treatment apparatus, wherein after the heat treatment of the temperature measurement substrate is completed, the memory section and the measuring instrument are connected to take out the data of the temperature detection signal stored in the memory section. Evaluation method.
設された測温用基板と、 この測温用基板の前記各温度検出部の温度検出信号を受
けて測温用基板上の複数の測定点の温度を計測する計測
器とを備え、 基板熱処理装置により前記測温用基板の熱処理を行った
ときの測定結果から、前記基板熱処理装置により基板を
熱処理する際の基板面における温度均一性を評価する基
板熱処理装置の評価装置であって、 前記測温用基板に、前記各温度検出部の温度検出信号を
それぞれ無線で送信する送信器を設けるとともに、 前記計測器に、前記送信器から送られた温度検出信号を
受信する受信器を接続したことを特徴とする基板熱処理
装置の評価装置。3. A substrate for temperature measurement in which a temperature detection unit is provided at each of a plurality of measurement points, and a plurality of substrates on the substrate for temperature measurement in response to a temperature detection signal of each of the temperature detection units of the substrate for temperature measurement. And a measuring device for measuring the temperature at the measurement point. From the measurement results obtained by performing the heat treatment on the substrate for temperature measurement by the substrate heat treatment apparatus, the temperature uniformity on the substrate surface when the substrate is heat treated by the substrate heat treatment apparatus is obtained. An evaluation device for a substrate heat treatment apparatus for evaluating the performance, wherein a transmitter for wirelessly transmitting a temperature detection signal of each of the temperature detection units is provided on the substrate for temperature measurement, and the transmitter for the measuring device is provided. An evaluation apparatus for a substrate heat treatment apparatus, wherein a receiver for receiving a temperature detection signal sent from the apparatus is connected.
設された測温用基板と、 この測温用基板の前記各温度検出部の温度検出信号を受
けて測温用基板上の複数の測定点の温度を計測する計測
器とを備え、 基板熱処理装置により前記測温用基板の熱処理を行った
ときの測定結果から、前記基板熱処理装置により基板を
熱処理する際の基板面における温度均一性を評価する基
板熱処理装置の評価装置であって、 前記測温用基板に、前記各温度検出部の温度検出信号の
データをそれぞれ記憶するメモリ部を設けるとともに、 前記計測器に、その計測器と前記メモリ部とを接続させ
てメモリ部に記憶された温度検出信号のデータを取り出
すためのコネクタを設けたことを特徴とする基板熱処理
装置の評価装置。4. A temperature measuring board having a temperature detecting section disposed at each of a plurality of measuring points, and a plurality of temperature measuring boards on the temperature measuring board receiving temperature detection signals from the temperature detecting sections of the temperature measuring board. And a measuring device for measuring the temperature at the measurement point. From the measurement results obtained by performing the heat treatment on the substrate for temperature measurement by the substrate heat treatment apparatus, the temperature uniformity on the substrate surface when the substrate is heat treated by the substrate heat treatment apparatus is obtained. An evaluation device for a substrate heat treatment apparatus for evaluating performance, wherein the temperature measurement substrate is provided with a memory unit for storing data of a temperature detection signal of each of the temperature detection units, and the measurement device is provided with a measurement device. An evaluation device for a substrate heat treatment apparatus, further comprising a connector for connecting the memory and the memory unit to extract data of a temperature detection signal stored in the memory unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10912298A JPH11307606A (en) | 1998-04-20 | 1998-04-20 | Evaluating method and device for substrate heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10912298A JPH11307606A (en) | 1998-04-20 | 1998-04-20 | Evaluating method and device for substrate heat treatment equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11307606A true JPH11307606A (en) | 1999-11-05 |
Family
ID=14502125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10912298A Pending JPH11307606A (en) | 1998-04-20 | 1998-04-20 | Evaluating method and device for substrate heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11307606A (en) |
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