JPH11307555A - Compression bonded semiconductor device - Google Patents
Compression bonded semiconductor deviceInfo
- Publication number
- JPH11307555A JPH11307555A JP11067698A JP11067698A JPH11307555A JP H11307555 A JPH11307555 A JP H11307555A JP 11067698 A JP11067698 A JP 11067698A JP 11067698 A JP11067698 A JP 11067698A JP H11307555 A JPH11307555 A JP H11307555A
- Authority
- JP
- Japan
- Prior art keywords
- guide ring
- semiconductor device
- insulating
- type semiconductor
- contact type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、電力用の圧接型
半導体装置に関し、特に、装置内における不活性ガス雰
囲気を確保する構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure contact type semiconductor device for electric power, and more particularly to a structure for securing an inert gas atmosphere in the device.
【０００２】[0002]
【従来の技術】図６は従来の圧接型半導体装置の一例を
示す断面図、図７は図６に示した圧接型半導体装置の部
分断面図である。図６、図７において、１は上主面には
陰極およびゲートが、下主面には陽極が形成されている
サイリスタ用半導体基板としてのシリコンウエハ、２は
第１の金属板としての周知の陽極熱補償板であり、シリ
コンウエハ１より大径をなし、その陽極形成面と同心状
にロー付され、シリコンウエハ１を補強している。３は
第２の金属板としての陰極熱補償板であり、シリコンウ
エハ１より小径で、シリコンウエハ１の陰極形成面に当
接されている。2. Description of the Related Art FIG. 6 is a sectional view showing an example of a conventional pressure contact type semiconductor device, and FIG. 7 is a partial sectional view of the pressure contact type semiconductor device shown in FIG. 6 and 7, reference numeral 1 denotes a silicon wafer as a thyristor semiconductor substrate having an upper main surface on which a cathode and a gate are formed, and a lower main surface on which an anode is formed, and 2 a well-known first metal plate. The anode heat compensator has a larger diameter than the silicon wafer 1 and is brazed concentrically with the anode forming surface to reinforce the silicon wafer 1. Reference numeral 3 denotes a cathode heat compensator serving as a second metal plate, which has a smaller diameter than the silicon wafer 1 and is in contact with the cathode forming surface of the silicon wafer 1.
【０００３】４は陽極熱補償板２とロー付けされたシリ
コンウエハ１の外周縁に、端面表面処理後、耐電圧性向
上のために塗布した絶縁ゴム材からなる絶縁コート部
材、５は硬質絶縁物であるセラミックからなる絶縁筒、
６は封止部材を兼ねる陽極用電極、７は、外周が絶縁筒
５の内周に、下端側内周が陽極熱補償板２の外周に、上
端側内周が陰極熱補償板３の外周にそれぞれ嵌合すると
共に、絶縁コート部材４を内包する内部空間Ｓを有し、
陽極熱補償板２および陰極熱補償板３を絶縁筒５と同心
状に位置決めする、弾性及び絶縁性を有するガイドリン
グであり、シリコンゴムからなる。８はゲートリード
線、９はガス置換のためのゲートパイプ、１０は封止部
材を兼ねる陰極用電極である。[0003] Reference numeral 4 denotes an insulating coating member made of an insulating rubber material applied to the outer peripheral edge of the silicon wafer 1 brazed to the anode heat compensating plate 2 and brazed to improve the withstand voltage after an end surface treatment, and 5 denotes a hard insulating material. An insulating cylinder made of ceramic,
Reference numeral 6 denotes an anode electrode also serving as a sealing member. Reference numeral 7 denotes an outer periphery on the inner periphery of the insulating tube 5, a lower inner periphery on the outer periphery of the anode heat compensator 2, and an upper inner periphery on the outer periphery of the cathode heat compensator 3. And has an internal space S that encloses the insulating coat member 4,
An elastic and insulating guide ring for positioning the anode heat compensating plate 2 and the cathode heat compensating plate 3 concentrically with the insulating cylinder 5 and made of silicon rubber. 8 is a gate lead wire, 9 is a gate pipe for gas replacement, and 10 is a cathode electrode also serving as a sealing member.
【０００４】次に、従来の半導体装置の組立て方法を下
記に示す。シリコンウエハ１の陽極が形成された下主面
と陽極熱補償板２を同心状にロー付し、シリコンウエハ
１の端面表面処理後に、その端面に絶縁コート部材４を
塗布する。一方、絶縁筒５の下端部と陽極用電極６の外
周部とを溶接し、陽極熱補償板２におけるシリコンウエ
ハ１をロー付されていない側が陽極用電極６と当接する
ように装着する。Next, a conventional method for assembling a semiconductor device will be described below. The lower main surface of the silicon wafer 1 on which the anode is formed and the anode heat compensator 2 are concentrically brazed. After the surface treatment of the end surface of the silicon wafer 1, an insulating coat member 4 is applied to the end surface. On the other hand, the lower end portion of the insulating tube 5 and the outer peripheral portion of the anode electrode 6 are welded, and the silicon wafer 1 of the anode heat compensator 2 is mounted such that the side of the silicon wafer 1 that is not soldered contacts the anode electrode 6.
【０００５】次に、ガイドリング７の外周と絶縁筒５の
内周部とを嵌合させると共に、下端側内周と陽極熱補償
板２の外周と嵌合させると共に、ガイドリング７の上端
側内周と陰極熱補償板３の外周部とを嵌合させ、絶縁筒
５の内周に対して陰極補熱償板３、シリコンウエハ１お
よび陽極熱補償板２を同心状に位置決めする。Next, the outer periphery of the guide ring 7 and the inner periphery of the insulating cylinder 5 are fitted together, the inner periphery of the lower end is fitted to the outer periphery of the anode heat compensator 2, and the upper end of the guide ring 7 is fitted. The inner periphery and the outer periphery of the cathode heat compensator 3 are fitted to each other, and the cathode heat compensator 3, the silicon wafer 1, and the anode heat compensator 2 are positioned concentrically with respect to the inner periphery of the insulating tube 5.
【０００６】次に、ゲートリード線８の接続を行い、更
に陰極用電極１０の外周部を絶縁筒５の上端部と溶接し
て絶縁筒５内を密閉する。次に、陽極用電極６と陰極用
電極１０との間に１〜４ｔｏｎの圧力で加圧し、陽極用
電極６と陽極熱補償板２との間、および、シリコンウエ
ハ１と、陰極熱補償板３および陰極用電極１０との間を
圧着させ、ゲートパイプ９から脱ガス、窒素等の不活性
ガス（図示せず）とのガス置換を行って密封し、圧接型
半導体装置を得る。Next, the gate lead wire 8 is connected, and the outer periphery of the cathode electrode 10 is welded to the upper end of the insulating tube 5 to seal the inside of the insulating tube 5. Next, a pressure of 1 to 4 ton is applied between the anode electrode 6 and the cathode electrode 10, and the pressure is applied between the anode electrode 6 and the anode thermal compensation plate 2, and between the silicon wafer 1 and the cathode thermal compensation plate. 3 and the cathode electrode 10 are pressed together, and the gate pipe 9 is degassed, replaced with an inert gas such as nitrogen (not shown), and sealed to obtain a pressure-contact type semiconductor device.
【０００７】[0007]
【発明が解決しようとする課題】従来の圧接型半導体装
置は、以上のように構成されているので、ガイドリング
７の内側に、半導体基板としてのシリコンウエハ１の外
周縁に塗布された絶縁コート部材４を内包する内部空間
Ｓが形成されるが、弾性を有するガイドリング７と第１
の金属板としての陽極熱補償板２および第２の金属板と
しての陰極熱補償板３との嵌合部にはクリアランスがほ
とんどなく、内部空間Ｓが密閉状態となるが、絶縁筒５
内ガスの不活性ガス（図示せず）との置換作業時に、ガ
イドリング７の内部空間Ｓ内に閉じ込められた空気を不
活性ガス（図示せず）と置換できず、後工程の熱処理作
業時に、空気中の酸素が絶縁コート部材４を通過してシ
リコンウエハ１に浸透し、シリコンウエハ１を酸化させ
てその耐電圧性能を劣化させる恐れがある等の問題点が
あった。Since the conventional pressure contact type semiconductor device is configured as described above, the insulating coating applied to the outer peripheral edge of the silicon wafer 1 as a semiconductor substrate is provided inside the guide ring 7. An internal space S containing the member 4 is formed, and the guide ring 7 having elasticity and the first space S are formed.
There is almost no clearance in the fitting portion between the anode heat compensator 2 as the metal plate and the cathode heat compensator 3 as the second metal plate, and the internal space S is in a sealed state.
At the time of replacing the internal gas with an inert gas (not shown), the air trapped in the internal space S of the guide ring 7 cannot be replaced with the inert gas (not shown). In addition, there is a problem that oxygen in the air passes through the insulating coat member 4 and penetrates into the silicon wafer 1 to oxidize the silicon wafer 1 to deteriorate its withstand voltage performance.
【０００８】この発明は、上記のような問題点を解消す
るためになされたものであり、ガイドリングにおける、
第１および第２の金属板との嵌合により形成された内部
空間の活性ガスを不活性ガスと容易に置換でき、半導体
基板の耐電圧性能劣化を防止できる圧接型半導体装置を
得ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has been made in consideration of the following problems.
An object of the present invention is to provide a press-contact type semiconductor device capable of easily replacing an active gas in an internal space formed by fitting with a first and a second metal plate with an inert gas and preventing a withstand voltage performance of a semiconductor substrate from deteriorating. And
【０００９】また、上記ガイドリングを安価に製作でき
る圧接型半導体装置を得ることを目的とする。Another object of the present invention is to provide a press-contact type semiconductor device in which the guide ring can be manufactured at low cost.
【００１０】[0010]
【課題を解決するための手段】第１の発明に係わる圧接
型半導体装置は、半導体基板と、該半導体基板の両面に
それぞれ配設された第１および第２の金属板と、前記半
導体基板の外周縁を覆う絶縁コート部材と、前記半導体
基板、前記第１および第２の金属板を内挿する絶縁筒
と、外周が前記絶縁筒の内周に、一端部内周が前記第１
の金属板の外周に、他端部内周が前記第２の金属板の外
周にそれぞれ嵌合すると共に、前記絶縁コート部材を内
包する内部空間を有し、前記第１および第２の金属板を
前記絶縁筒と同心状に位置決めする絶縁性のガイドリン
グと、前記絶縁筒の両端にそれぞれ配設され、前記第１
および第２の金属板をその軸方向に押圧すると共に、少
なくとも前記半導体基板および前記ガイドリングを封止
する一対の封止部材とを備え、前記絶縁筒内に不活性ガ
スを封入した圧接型半導体装置において、前記ガイドリ
ングに、その端部の外側と前記内部空間とを連通する連
通路が形成されているものである。According to a first aspect of the present invention, there is provided a press-contact type semiconductor device, comprising: a semiconductor substrate; first and second metal plates provided on both surfaces of the semiconductor substrate; An insulating coating member for covering an outer peripheral edge; an insulating cylinder for inserting the semiconductor substrate and the first and second metal plates; an outer periphery on the inner periphery of the insulating cylinder;
The inner periphery of the other end is fitted to the outer periphery of the second metal plate, and the inner periphery of the second metal plate has an internal space that encloses the insulating coating member. An insulating guide ring that is positioned concentrically with the insulating cylinder;
And a pair of sealing members for pressing the second metal plate in the axial direction thereof and sealing at least the semiconductor substrate and the guide ring, and wherein an inert gas is sealed in the insulating cylinder. In the device, a communication path is formed in the guide ring to communicate an outside of an end of the guide ring with the internal space.
【００１１】第２の発明に係わる圧接型半導体装置は、
第１の発明に係わる圧接型半導体装置において、連通路
が、ガイドリングの端部における外周縁若しくはその近
傍と、内周縁若しくはその近傍とに形成されているもの
である。According to a second aspect of the present invention, there is provided a press contact type semiconductor device.
In the press-contact type semiconductor device according to the first invention, the communication path is formed at the outer peripheral edge or the vicinity thereof at the end of the guide ring and at the inner peripheral edge or the vicinity thereof.
【００１２】第３の発明に係わる圧接型半導体装置は、
第１または第２の発明に係わる圧接型半導体装置におい
て、ガイドリングが、外周が絶縁筒の内周に、一端部内
周が第１の金属板の外周に嵌合する第１のガイドリング
部材と、外周が前記第１のガイドリング部材の他端部内
周に、一端部内周が第２の金属板の外周に嵌合する第２
のガイドリング部材とからなるものである。A pressure contact type semiconductor device according to a third aspect of the present invention
In the press-contact type semiconductor device according to the first or second invention, the guide ring includes a first guide ring member having an outer periphery fitted to the inner periphery of the insulating cylinder and an inner periphery at one end fitted to the outer periphery of the first metal plate. The outer periphery of which fits on the inner periphery of the other end of the first guide ring member, and the inner periphery of one end fits on the outer periphery of the second metal plate.
And a guide ring member.
【００１３】第４の発明に係わる圧接型半導体装置は、
第１乃至第３の発明の少なくとも何れかに係わる圧接型
半導体装置において、ガイドリングが弾性を備えた成形
品であるものである。According to a fourth aspect of the present invention, there is provided a pressure-contact type semiconductor device.
In the press-contact type semiconductor device according to at least one of the first to third inventions, the guide ring is a molded article having elasticity.
【００１４】[0014]
【発明の実施の形態】実施の形態１．この発明の実施の
形態１を図１に基づき説明する。図１は圧接型半導体装
置の断面図、図２は図１は圧接型半導体装置の部分断面
図である。図中、従来例と同じ符号で示されたものは従
来例のそれと同一若しくは同等なものを示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Embodiment 1 of the present invention will be described with reference to FIG. FIG. 1 is a sectional view of a press-contact type semiconductor device, and FIG. 2 is a partial cross-sectional view of the press-contact type semiconductor device. In the figure, those denoted by the same reference numerals as those of the conventional example indicate the same or equivalent parts as those of the conventional example.
【００１５】図１、図２において、７０は、外周が絶縁
筒５の内周に、下端側内周が陽極熱補償板２の外周に、
上端側内周が陰極熱補償板３の外周にそれぞれ嵌合する
と共に、絶縁ゴム材からなる絶縁コート部材４を内包す
る内部空間Ｓを有し、陽極熱補償板２および陰極熱補償
板３を絶縁筒５と同心状に位置決めする弾性を有する絶
縁ゴム材からなるガイドリングであり、その上端側にお
ける外側と内部空間Ｓとを連通する連通路としての貫通
孔７０ａ、７０ｂが形成されている。1 and 2, reference numeral 70 denotes an outer periphery on the inner periphery of the insulating cylinder 5, an inner periphery on the lower end side on the outer periphery of the anode heat compensator 2,
The inner periphery of the upper end side is fitted to the outer periphery of the cathode heat compensating plate 3 respectively, and has an internal space S containing the insulating coating member 4 made of an insulating rubber material. A guide ring made of an elastic insulating rubber material that is positioned concentrically with the insulating cylinder 5 and has through holes 70a and 70b formed as communication paths for communicating the outside at the upper end and the internal space S.
【００１６】即ち、ガイドリング７０の内側には絶縁コ
ート部材４を内包する内部空間Ｓが形成されているが、
ガイドリング７０の上端側における外周部に、即ち、絶
縁筒５の内周との嵌合面の上端部に、上端外周部と連な
る円筒部の一部をくり抜くように貫通孔７０ａを形成
し、ガイドリング７０の上端側内周部寄りに、即ち、陰
極熱補償板３の外周との嵌合面の近傍に貫通孔７０ｂを
形成している。従って、ガイドリング７０の内部空間Ｓ
内は、最初は空気が充満され、酸素雰囲気にあるが、貫
通孔７０ａ、７０ｂを通して外部へ強制排出し、窒素等
の不活性ガス（図示せず）と完全に置換することができ
る。That is, an inner space S containing the insulating coat member 4 is formed inside the guide ring 70,
A through-hole 70a is formed in the outer peripheral portion on the upper end side of the guide ring 70, that is, in the upper end portion of the fitting surface with the inner periphery of the insulating cylinder 5 so as to hollow out a part of the cylindrical portion connected to the upper end outer peripheral portion, A through hole 70 b is formed near the inner peripheral portion on the upper end side of the guide ring 70, that is, near the fitting surface with the outer periphery of the cathode heat compensator 3. Therefore, the internal space S of the guide ring 70
The inside is initially filled with air and is in an oxygen atmosphere, but can be forcibly discharged to the outside through the through holes 70a and 70b and completely replaced with an inert gas (not shown) such as nitrogen.
【００１７】なお、ガイドリング７０の上端側外周部に
貫通孔７０ａを、内周部寄りに貫通孔７０ｂを形成して
いるので、盛上がった絶縁コート部材４により内部空間
Ｓが分断されても、分断された両方の内部空間Ｓ内を不
活性ガス（図示せず）で確実に置換することができる。Since the through hole 70a is formed in the outer peripheral portion on the upper end side of the guide ring 70 and the through hole 70b is formed near the inner peripheral portion, even if the inner space S is divided by the raised insulating coat member 4, The inside of both divided internal spaces S can be reliably replaced with an inert gas (not shown).
【００１８】この結果として、内部空間Ｓが酸素雰囲気
のままに放置されず、不活性ガス雰囲気に保持され、従
って、酸素ガス等の活性ガス（図示せず）が絶縁コート
部材４を貫通してシリコンウエハ１の周端部表面が酸化
され、耐電圧性能が劣化する等の恐れがなく、高信頼性
のものが得られる。As a result, the internal space S is not left in an oxygen atmosphere, but is maintained in an inert gas atmosphere. Therefore, an active gas (not shown) such as an oxygen gas penetrates the insulating coat member 4. There is no fear that the peripheral end surface of the silicon wafer 1 is oxidized and the withstand voltage performance is degraded, so that a highly reliable one can be obtained.
【００１９】なお、貫通孔７０ａ、７０ｂは、ガイドリ
ング７０の成形金型を、ガイドリング７０に貫通孔７０
ａ、７０ｂが形成されるように加工しておくことによ
り、ガイドリング７０の成形加工時に貫通孔７０ａ、７
０ｂを同時に形成できる。従って、ガイドリング７０
は、貫通孔７０ａ、７０ｂが形成されたにもかかわら
ず、低コストで製造できる。The through-holes 70a and 70b are formed by inserting a molding die for the guide ring 70 into the guide ring 70.
a, 70b are formed so that the through holes 70a, 7
0b can be formed simultaneously. Therefore, the guide ring 70
Can be manufactured at low cost despite the formation of the through holes 70a and 70b.
【００２０】実施の形態２．図３は、この発明の実施の
形態２としての圧接型半導体装置におけるガイドリング
の部分断面図である。圧接型半導体装置におけるその他
の構成部品については実施の形態１に示したものと同一
である。Embodiment 2 FIG. 3 is a partial sectional view of a guide ring in a press-contact type semiconductor device according to a second embodiment of the present invention. Other components in the press contact type semiconductor device are the same as those shown in the first embodiment.
【００２１】図において、７１は、外周が絶縁筒５の内
周に、下端側内周が陽極熱補償板２の外周に、上端側内
周が陰極熱補償板３の外周にそれぞれ嵌合すると共に、
絶縁コート部材４１を内包する内部空間Ｓを有し、陽極
熱補償板２および陰極熱補償板３を絶縁筒５と同心状に
位置決めする絶縁ゴム製のガイドリングであり、その上
端側における外側と内部空間Ｓとを連通する貫通孔７１
ａが形成されている。In the figure, reference numeral 71 denotes an outer periphery fitted to the inner periphery of the insulating tube 5, a lower inner periphery fitted to the outer periphery of the anode heat compensator 2, and an upper inner periphery fitted to the outer periphery of the cathode heat compensator 3. Along with
A guide ring made of insulating rubber having an internal space S containing the insulating coating member 41 and positioning the anode heat compensating plate 2 and the cathode heat compensating plate 3 concentrically with the insulating cylinder 5; Through hole 71 communicating with internal space S
a is formed.
【００２２】即ち、ガイドリング７１の内側には絶縁コ
ート部材４１を内包する内部空間Ｓが形成されている
が、ガイドリング７１の上端側における外側と内部空間
Ｓとを貫通する所定の内径を有する貫通孔７１ａが形成
されている。従って、実施の形態１の場合と同様に、ガ
イドリング７１の内部空間Ｓ内は、貫通孔７１ａを通し
て窒素等の不活性ガス（図示せず）と置換することがで
きる。That is, an inner space S containing the insulating coating member 41 is formed inside the guide ring 71, and has a predetermined inner diameter penetrating the outer space at the upper end side of the guide ring 71 and the inner space S. A through hole 71a is formed. Therefore, similarly to the case of the first embodiment, the interior space S of the guide ring 71 can be replaced with an inert gas (not shown) such as nitrogen through the through hole 71a.
【００２３】なお、ガイドリング７１の成形金型を、貫
通孔７１ａが形成されるように加工しておくことによ
り、ガイドリング７１の成形加工時に貫通孔７１ａを同
時に形成でき、加工穴数が少なくて済み、その分、成形
加工が容易である。ガイドリング７１は実施の形態１に
おける絶縁コート部材４に比較して絶縁コート部材４１
の盛上りが小さく、内部空間Ｓを分断しない場合に適し
た構造である。By forming the forming die of the guide ring 71 so that the through hole 71a is formed, the through hole 71a can be formed at the same time when the guide ring 71 is formed, and the number of processing holes is reduced. The molding process is easy. The guide ring 71 is made of an insulating coat member 41 compared to the insulating coat member 4 in the first embodiment.
This structure is suitable when the internal space S is not divided due to a small swell.
【００２４】実施の形態３．図４は、この発明の実施の
形態３としての圧接型半導体装置におけるガイドリング
の部分断面図である。図において、２２は陽極熱補償板
であり、シリコンウエハ１と陽極熱補償板２２とはロー
付されてなく、いわゆるアロイフリーの構成をなす。４
２は、図１〜図３に示した絶縁コート部材４と同じ絶縁
ゴム材からなるシリコンウエハ１の外周縁に塗布された
絶縁コート部材であるが、陽極熱補償板２２の中段外周
面２２ａと嵌合する内周面４２ａが形成されている。Embodiment 3 FIG. FIG. 4 is a partial sectional view of a guide ring in a press-contact type semiconductor device according to Embodiment 3 of the present invention. In the figure, reference numeral 22 denotes an anode heat compensating plate, and the silicon wafer 1 and the anode heat compensating plate 22 are not soldered and have a so-called alloy-free configuration. 4
Reference numeral 2 denotes an insulating coating member applied to the outer peripheral edge of the silicon wafer 1 made of the same insulating rubber material as the insulating coating member 4 shown in FIGS. An inner peripheral surface 42a to be fitted is formed.
【００２５】７２は、外周が絶縁筒５の内周に、下端側
内周が陽極熱補償板２の下段の外周に、上端側内周が陰
極熱補償板３の外周にそれぞれ嵌合すると共に、絶縁コ
ート部材４２を内包する内部空間ＳＡを有し、陽極熱補
償板２２および陰極熱補償板３を絶縁筒５と同心状に位
置決めする絶縁ゴム製のガイドリングであり、その上端
側における外周部の外側と内部空間ＳＡとを連通する貫
通孔７２ａと、陰極熱補償板３の外周部との嵌合面に連
通溝７２ｂが形成されている。Reference numeral 72 denotes an outer periphery fitted to the inner periphery of the insulating tube 5, a lower end inner periphery fitted to the lower periphery of the anode heat compensator 2, and an upper end inner periphery fitted to the outer periphery of the cathode heat compensator 3. And a guide ring made of insulating rubber having an internal space SA containing the insulating coating member 42 and positioning the anode heat compensating plate 22 and the cathode heat compensating plate 3 concentrically with the insulating cylinder 5. A communication groove 72b is formed in a fitting surface between the through hole 72a that communicates the outside of the portion with the internal space SA and the outer peripheral portion of the cathode heat compensator 3.
【００２６】即ち、ガイドリング７２が下端側内周にて
陽極熱補償板２２の下段外周に、上端側内周にて陰極熱
補償板３の外周にそれぞれ嵌合し、絶縁コート部材４２
の内周面４２ａと陽極熱補償板２２の中段の外周面２２
ａとが嵌合することにより、シリコンウエハ１、陽極熱
補償板２２および陰極熱補償板３は、アロイフリータイ
プであっても絶縁筒５の内周と同心状に、容易に位置決
めできる。That is, the guide ring 72 is fitted to the lower outer periphery of the anode heat compensator 22 at the lower inner periphery and to the outer periphery of the cathode heat compensator 3 at the upper inner periphery.
Inner peripheral surface 42a and middle outer peripheral surface 22 of anode heat compensator 22
By fitting with a, the silicon wafer 1, the anode heat compensating plate 22 and the cathode heat compensating plate 3 can be easily positioned concentrically with the inner periphery of the insulating cylinder 5 even if it is an alloy-free type.
【００２７】そして、絶縁コート部材４２を内包するガ
イドリング７２に形成された内部空間ＳＡは、ガイドリ
ング７２の上端側に形成された貫通孔７２ａおよび連通
溝７２ｂにて外部、即ち、絶縁筒５の内部空間と連通さ
れているので、連通路の形成場所として最適であり、実
施の形態１の場合と同様に、盛上がった絶縁コート部材
４により内部空間ＳＡが分断されても、分断された両方
の内部空間ＳＡ内を不活性ガス（図示せず）で確実に置
換することができる。The inner space SA formed in the guide ring 72 enclosing the insulating coat member 42 is formed outside through the through hole 72a and the communication groove 72b formed on the upper end side of the guide ring 72, that is, the insulating cylinder 5 is formed. Since the internal space SA is communicated with the internal space SA, it is most suitable as a place where the communication passage is formed. As in the case of the first embodiment, even if the internal space SA is divided by the raised insulating coat member 4, the internal space SA is divided. Both interior spaces SA can be reliably replaced with an inert gas (not shown).
【００２８】しかも、連通路としての一方を連通溝７２
ｂとしたので、ガイドリング７２の成形と同時加工する
場合において、連通溝７２ｂの形成のための成形金型の
製作が容易である効果がある。In addition, one of the communication passages is connected to the communication groove 72.
In the case where the guide ring 72 is formed simultaneously with the formation of the guide ring 72, there is an effect that it is easy to manufacture a forming die for forming the communication groove 72b.
【００２９】実施の形態４．図５は、この発明の実施の
形態４としての圧接型半導体装置におけるガイドリング
の部分断面図である。図において、２３は陽極熱補償板
であり、シリコンウエハ１と陽極熱補償板２３とはロー
付されてなく、いわゆるアロイフリーの構成をなす。４
３は、図１〜図５に示した絶縁コート部材４、４２と同
じ絶縁ゴム材からなるシリコンウエハ１の外周縁に塗布
された絶縁コート部材であるが、陽極熱補償板２３、陰
極熱補償板３の外周面２３ａ、３ａとそれぞれ嵌合する
内周面４３ａ、４４ｂが形成されている。Embodiment 4 FIG. 5 is a partial sectional view of a guide ring in a press-contact type semiconductor device according to Embodiment 4 of the present invention. In the drawing, reference numeral 23 denotes an anode heat compensating plate, and the silicon wafer 1 and the anode heat compensating plate 23 are not soldered, and have a so-called alloy-free structure. 4
Reference numeral 3 denotes an insulating coating member applied to the outer peripheral edge of the silicon wafer 1 made of the same insulating rubber material as the insulating coating members 4 and 42 shown in FIGS. Inner peripheral surfaces 43a and 44b are formed to be fitted with the outer peripheral surfaces 23a and 3a of the plate 3, respectively.
【００３０】７３Ａは、外周が絶縁筒５の内周に、下端
側内周が陽極熱補償板２３の外周に嵌合する絶縁ゴム製
のガイドリング部材、７３Ｂは、外周がガイドリング部
材７３Ａの上端側内周に、上端側内周が陽極熱補償板２
３の外周に嵌合する絶縁ゴム製のガイドリング部材であ
り、ガイドリング部材７３Ａ、７３Ｂにてガイドリング
７３を構成する。Reference numeral 73A denotes a guide ring member made of insulating rubber whose outer periphery fits into the inner periphery of the insulating cylinder 5 and its lower end side fits into the outer periphery of the anode heat compensator 23. 73B denotes an outer periphery of the guide ring member 73A. Anode heat compensator 2 at the upper end side inner circumference
3 is a guide ring member made of insulating rubber fitted to the outer circumference of the guide ring 3, and the guide ring 73 is formed by the guide ring members 73 </ b> A and 73 </ b> B.
【００３１】ガイドリング７３を構成するガイドリング
部材７３Ａ、７３Ｂにて絶縁コート部材４３を内包する
内部空間ＳＢを形成し、陽極熱補償板２３および陰極熱
補償板３を絶縁筒５と同心状に位置決めする。そして、
ガイドリング部材７３Ｂの上端側において、外側と内部
空間ＳＢとを連通する連通路としての貫通孔７３ａが形
成されている。The guide ring members 73A and 73B constituting the guide ring 73 form an internal space SB containing the insulating coat member 43, and the anode heat compensating plate 23 and the cathode heat compensating plate 3 are concentric with the insulating cylinder 5. Position. And
On the upper end side of the guide ring member 73B, a through-hole 73a is formed as a communication path for communicating the outside with the internal space SB.
【００３２】即ち、ガイドリング７３をガイドリング部
材７３Ａ、７３Ｂにて構成し、軸方向に分割可能とした
ので、シリコンウエハ１の外径が陽極熱補償板２３およ
び陰極熱補償板３の外径よりも大きい場合において、し
かも、シリコンウエハ１と陽極熱補償板２３とがロー付
けされていないアロイフリータイプであっても、シリコ
ンウエハ１、陽極熱補償板２３および陰極熱補償板３を
絶縁筒５の内周と同心状に位置決めできる。That is, since the guide ring 73 is constituted by the guide ring members 73A and 73B and can be divided in the axial direction, the outer diameter of the silicon wafer 1 is smaller than that of the anode heat compensator 23 and the cathode heat compensator 3. When the silicon wafer 1, the anode heat compensator 23, and the cathode heat compensator 3 are insulated cylinders even if the silicon wafer 1, the anode heat compensator 23 5 can be positioned concentrically with the inner circumference.
【００３３】そして、内部空間ＳＢは、貫通孔７３ａに
て外部、即ち、絶縁筒５の内部空間と連通されているの
で、窒素等の不活性ガス（図示せず）との置換を容易に
行うことができる。Since the internal space SB is communicated with the outside through the through hole 73a, that is, with the internal space of the insulating cylinder 5, the internal space SB can be easily replaced with an inert gas such as nitrogen (not shown). be able to.
【００３４】以上のように、実施の形態１〜実施の形態
４としての圧接型半導体装置においては、ガイドリング
７０〜７３の上端側に、連通路としての貫通孔７０ａ〜
７３ａや連通溝７２ｂを形成したので、ガイドリング内
の内部空間Ｓ、ＳＡ、ＳＢのガスを窒素等の不活性ガス
（図示せず）と完全に置換でき、長期間、安定した高信
頼性の圧接型半導体装置を得る事ができる。As described above, in the press-contact type semiconductor device according to the first to fourth embodiments, the through holes 70a to 70h as communication paths are formed at the upper ends of the guide rings 70 to 73.
Since the communication groove 73a and the communication groove 72b are formed, the gas in the internal spaces S, SA, and SB in the guide ring can be completely replaced with an inert gas (not shown) such as nitrogen. A press-contact type semiconductor device can be obtained.
【００３５】また、実施の形態１〜実施の形態４として
の圧接型半導体装置においては、ガイドリング７０〜７
３を、絶縁ゴム材にて成形したので、ガイドリング７０
〜７３の成形時に貫通孔７０ａ〜７３ａや連通溝７２ｂ
を同時に形成でき、高信頼性の圧接型半導体装置を安価
に製造できる。In the press-contact type semiconductor device according to the first to fourth embodiments, guide rings 70 to 7 are provided.
3 was formed from an insulating rubber material.
Through holes 70a-73a and communication grooves 72b
Can be formed at the same time, and a highly reliable pressure contact type semiconductor device can be manufactured at low cost.
【００３６】[0036]
【発明の効果】第１の発明によれば、第１および第２の
金属板を同心状に位置決めする絶縁性のガイドリングの
一端部若しくは他端部の少なくとも何れかにおけるその
外側と絶縁コート部材を内包する内部空間とを連通する
連通路を形成したので、内部空間における活性ガスを連
通路を介して不活性ガスと容易に置換でき、半導体基板
の酸化による劣化を防止できる高信頼性のものが得られ
る効果がある。According to the first aspect of the present invention, the outer side of at least one of one end and the other end of the insulating guide ring for concentrically positioning the first and second metal plates and the insulating coating member. A high-reliability one that can easily replace the active gas in the internal space with an inert gas through the communication path and prevents deterioration due to oxidation of the semiconductor substrate because a communication path communicating with the internal space containing The effect is obtained.
【００３７】また、第２の発明によれば、連通路とし
て、ガイドリングの端部における外周縁若しくはその近
傍と内周縁若しくはその近傍とにそれぞれ形成したの
で、内部空間に内包された絶縁コート部材により内部空
間が分断されても内部空間に不活性ガスを容易に充填で
きるものが得られる効果がある。According to the second aspect of the present invention, since the communication path is formed at the outer peripheral edge or the vicinity thereof at the end of the guide ring and at the inner peripheral edge or the vicinity thereof, the insulating coat member contained in the internal space is provided. Thus, even if the internal space is divided, there is an effect that an inert gas can be easily filled in the internal space.
【００３８】また、第３の発明によれば、ガイドリング
を、その外周が絶縁筒の内周に、一端部内周が第１の金
属板の外周に嵌合する第１のガイドリングと、外周が前
記第１のガイドリングの他端部内周に、一端部内周が第
２の金属板の外周に嵌合する第２のガイドリングとから
分割可能に構成し、かつ、第１のガイドリングおよび第
２のガイドリングの少なくとも何れかの端部に絶縁コー
ト部材を内包する内部空間と外部とを連通する連通路を
形成したので、第１の金属板および第２の金属板の外径
が共に半導体基板の外径より小径であっても、第１およ
び第２の金属板を前記絶縁筒と同心状に位置決めできる
と共に、内部空間に不活性ガスを容易に充填できるもの
が得られる効果がある。According to the third aspect of the present invention, the guide ring has an outer periphery fitted to the inner periphery of the insulating cylinder, and an inner periphery at one end fitted to the outer periphery of the first metal plate. Is configured so as to be separable from the inner circumference of the other end of the first guide ring and the second guide ring whose inner circumference at the one end is fitted to the outer circumference of the second metal plate. At least one end of the second guide ring is provided with a communication passage for communicating the internal space containing the insulating coat member with the outside, so that the outer diameters of the first metal plate and the second metal plate are both equal. Even if the diameter is smaller than the outer diameter of the semiconductor substrate, the first and second metal plates can be positioned concentrically with the insulating cylinder, and the inner space can be easily filled with an inert gas. .
【００３９】また、第４発明によれば、ガイドリングを
弾性を備えた成形品で構成したので、連通路を成形時に
同時に形成でき、低コストのものが得られる効果があ
る。According to the fourth aspect of the present invention, since the guide ring is formed of a molded product having elasticity, the communication passage can be formed at the same time as molding, and there is an effect that a low-cost one can be obtained.
【図１】 この発明の実施の形態１としての圧接型半導
体装置の断面図である。FIG. 1 is a sectional view of a press-contact type semiconductor device according to a first embodiment of the present invention;
【図２】 図１は圧接型半導体装置の部分断面図であ
る。FIG. 1 is a partial sectional view of a press-contact type semiconductor device.
【図３】 この発明の実施の形態２としての圧接型半導
体装置の部分断面図である。FIG. 3 is a partial sectional view of a press-contact type semiconductor device as a second embodiment of the present invention;
【図４】 この発明の実施の形態３としての圧接型半導
体装置の部分断面図である。FIG. 4 is a partial sectional view of a press-contact type semiconductor device as a third embodiment of the present invention;
【図５】 この発明の実施の形態４としての圧接型半導
体装置の部分断面図である。FIG. 5 is a partial sectional view of a press-contact type semiconductor device as a fourth embodiment of the present invention;
【図６】 従来の圧接型半導体装置の一例を示す断面図
である。FIG. 6 is a cross-sectional view illustrating an example of a conventional pressure contact type semiconductor device.
【図７】 図６に示した圧接型半導体装置の部分断面図
である。FIG. 7 is a partial cross-sectional view of the press contact type semiconductor device shown in FIG.
１ シリコンウエハ、２ 陽極熱補償板、３ 陰極熱補
償板、４、４１、４２、４３ 絶縁コート部材、５ 絶
縁筒、６ 陽極用電極、８ ゲートリード線、９ゲート
パイプ、１０ 陰極用電極、７０、７１、７２、７３
ガイドリング、７０ａ、７０ｂ、７１ａ、７２ａ、７３
ａ 貫通孔、７２ｂ 連通溝。Reference Signs List 1 silicon wafer, 2 anode heat compensator, 3 cathode heat compensator, 4, 41, 42, 43 insulating coating member, 5 insulating cylinder, 6 anode electrode, 8 gate lead wire, 9 gate pipe, 10 cathode electrode, 70, 71, 72, 73
Guide ring, 70a, 70b, 71a, 72a, 73
a Through hole, 72b Communication groove.
Claims (4)
れぞれ配設された第１および第２の金属板と、前記半導
体基板の外周縁を覆う絶縁コート部材と、前記半導体基
板、前記第１および第２の金属板を内挿する絶縁筒と、
外周が前記絶縁筒の内周に、一端部内周が前記第１の金
属板の外周に、他端部内周が前記第２の金属板の外周に
それぞれ嵌合すると共に、前記絶縁コート部材を内包す
る内部空間を有し、前記第１および第２の金属板を前記
絶縁筒と同心状に位置決めする絶縁性のガイドリング
と、前記絶縁筒の両端にそれぞれ配設され、前記第１お
よび第２の金属板をその軸方向に押圧すると共に、少な
くとも前記半導体基板および前記ガイドリングを封止す
る一対の封止部材とを備え、前記絶縁筒内に不活性ガス
を封入した圧接型半導体装置において、前記ガイドリン
グは、その端部の外側と前記内部空間とを連通する連通
路が形成されていることを特徴とする圧接型半導体装
置。A semiconductor substrate; first and second metal plates disposed on both surfaces of the semiconductor substrate; an insulating coating member covering an outer peripheral edge of the semiconductor substrate; And an insulating cylinder for inserting the second metal plate,
The outer circumference fits into the inner circumference of the insulating cylinder, the inner circumference at one end fits the outer circumference of the first metal plate, the inner circumference at the other end fits the outer circumference of the second metal plate, and the insulating coating member is included. An insulative guide ring for positioning the first and second metal plates concentrically with the insulating tube, and disposed at both ends of the insulating tube, And a pair of sealing members for sealing at least the semiconductor substrate and the guide ring while pressing the metal plate in the axial direction, and a pressure-contact type semiconductor device in which an inert gas is sealed in the insulating cylinder. A pressure-contact type semiconductor device, wherein the guide ring has a communication path communicating an outside of an end of the guide ring with the internal space.
て、連通路は、ガイドリングの端部における外周縁若し
くはその近傍と、内周縁若しくはその近傍とに形成され
ていることを特徴とする圧接型半導体装置。2. The pressure-contact type semiconductor device according to claim 1, wherein the communication path is formed at an outer peripheral edge at or near an end of the guide ring and at an inner peripheral edge or near the inner peripheral edge. Type semiconductor device.
置において、ガイドリングは、外周が絶縁筒の内周に、
一端部内周が第１の金属板の外周に嵌合する第１のガイ
ドリング部材と、外周が前記第１のガイドリング部材の
他端部内周に、一端部内周が第２の金属板の外周に嵌合
する第２のガイドリング部材とからなることを特徴とす
る圧接型半導体装置。3. The pressure-contact type semiconductor device according to claim 1, wherein the outer periphery of the guide ring is provided on the inner periphery of the insulating cylinder.
A first guide ring member having an inner periphery at one end fitted to the outer periphery of the first metal plate; an outer periphery at an inner periphery at the other end of the first guide ring member; and an inner periphery at one end at an outer periphery of the second metal plate. And a second guide ring member that fits into the pressure contact type semiconductor device.
圧接型半導体装置において、ガイドリングは弾性を備え
た成形品であることを特徴とする圧接型半導体装置。4. The pressure contact type semiconductor device according to claim 1, wherein the guide ring is a molded product having elasticity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11067698A JP3684834B2 (en) | 1998-04-21 | 1998-04-21 | Pressure contact type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11067698A JP3684834B2 (en) | 1998-04-21 | 1998-04-21 | Pressure contact type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11307555A true JPH11307555A (en) | 1999-11-05 |
| JP3684834B2 JP3684834B2 (en) | 2005-08-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11067698A Expired - Fee Related JP3684834B2 (en) | 1998-04-21 | 1998-04-21 | Pressure contact type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3684834B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019116736A1 (en) * | 2017-12-12 | 2019-06-20 | 三菱電機株式会社 | Pressure-contact type semiconductor device and method for producing pressure-contact type semiconductor device |
-
1998
- 1998-04-21 JP JP11067698A patent/JP3684834B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019116736A1 (en) * | 2017-12-12 | 2019-06-20 | 三菱電機株式会社 | Pressure-contact type semiconductor device and method for producing pressure-contact type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3684834B2 (en) | 2005-08-17 |
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