JPH11298185A - Transparent electromagnetic wave shielding material and its manufacture - Google Patents
Transparent electromagnetic wave shielding material and its manufactureInfo
- Publication number
- JPH11298185A JPH11298185A JP9377098A JP9377098A JPH11298185A JP H11298185 A JPH11298185 A JP H11298185A JP 9377098 A JP9377098 A JP 9377098A JP 9377098 A JP9377098 A JP 9377098A JP H11298185 A JPH11298185 A JP H11298185A
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- JP
- Japan
- Prior art keywords
- electromagnetic wave
- layer
- thin film
- wave shielding
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、各種計測機器や
ＶＤＴ、ＣＲＴ、ＰＤＰ（プラズマディスプレイパネ
ル）などディスプレイの前面に配置して、これらの機器
から放射される電磁波を遮蔽するとともに表示部を透視
することができる電磁波シールド材料とその製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of arranging various measuring instruments, VDTs, CRTs, and PDPs (plasma display panels) on the front of a display to shield electromagnetic waves radiated from these instruments and to see through a display section. The present invention relates to an electromagnetic wave shielding material that can be used and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、電磁波を遮蔽するとともに後方を
透視することができる電磁波シールド材料として、大き
く分けて次の２種類の構成のものがあった。2. Description of the Related Art Conventionally, there have been roughly divided into the following two types of electromagnetic wave shielding materials capable of shielding electromagnetic waves and allowing the rear to be seen through.
【０００３】一つは、導電性メッシュを導電部とし、透
明ガラスまたは透明樹脂板でこれを挟みこんだ繊維メッ
シュ方式と呼ばれるものである。[0003] One is a fiber mesh method in which a conductive mesh is used as a conductive portion and is sandwiched between transparent glass or a transparent resin plate.
【０００４】もう一つは、ＩＴＯ膜やＡｇ膜などの透明
性を有する導電性薄膜を、蒸着法やスパッタリング法な
どによって、ガラスなどの透明基体上に形成した薄膜方
式と呼ばれるものである。The other is a so-called thin film method in which a transparent conductive thin film such as an ITO film or an Ag film is formed on a transparent substrate such as glass by a vapor deposition method or a sputtering method.
【０００５】[0005]
【発明が解決しようとする課題】しかし、繊維メッシュ
方式は、導電性メッシュの導電性が高いため電磁波シー
ルド性は高いものであるが、導電性メッシュが目障りと
なり透視性が低いという問題点がある。However, the fiber mesh method has a high electromagnetic wave shielding property due to the high conductivity of the conductive mesh, but has a problem that the conductive mesh is obstructive and has low transparency. .
【０００６】逆に、薄膜方式は、導電性薄膜の透明性が
高いため透視性は高いが、導電性薄膜の導電性が劣るた
め電磁波シールド性は低いという問題点がある。On the other hand, the thin film method has a problem that although the transparency of the conductive thin film is high, the transparency is high, but the conductivity of the conductive thin film is inferior and the electromagnetic wave shielding property is low.
【０００７】したがって、この発明は、上記のような問
題点を解消し、電磁波シールド性と透視性とがともに優
れた透視性電磁波シールド材料とその製造方法を提供す
ることを目的とする。Accordingly, an object of the present invention is to solve the above-mentioned problems and to provide a transparent electromagnetic wave shielding material having both excellent electromagnetic wave shielding properties and excellent transparency, and a method of manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】この発明の透視性電磁波
シールド材料は、以上の目的を達成するために、つぎの
ように構成した。Means for Solving the Problems In order to achieve the above object, the transparent electromagnetic wave shielding material of the present invention is constituted as follows.
【０００９】つまり、この発明の透視性電磁波シールド
材料は、透明基体上に、金属酸化物または金属硫化物か
らなる黒色層と、金属薄膜層とが電磁波シールドパター
ン形状に少なくとも順次積層されるように構成した。In other words, the transparent electromagnetic wave shielding material of the present invention is such that a black layer made of a metal oxide or a metal sulfide and a metal thin film layer are at least sequentially laminated in an electromagnetic wave shielding pattern on a transparent substrate. Configured.
【００１０】また、上記の発明において、金属薄膜層上
に、防錆層が形成されるように構成してもよい。[0010] In the above invention, a rust prevention layer may be formed on the metal thin film layer.
【００１１】また、この発明の透視性電磁波シールド材
料の製造方法は、透明基体上に、電磁波シールドパター
ン形状と逆パターンのレジスト層を形成し、次いで金属
酸化物または金属硫化物からなる黒色層を全面的に形成
し、次いでその上に金属薄膜層を全面的に形成し、次い
でレジスト層をその上に積層された黒色層と金属薄膜層
とともに除去するように構成した。The method for producing a see-through electromagnetic wave shielding material according to the present invention comprises forming a resist layer having a pattern opposite to the electromagnetic wave shield pattern shape on a transparent substrate, and then forming a black layer made of a metal oxide or a metal sulfide. The entire surface was formed, then a metal thin film layer was entirely formed thereon, and then the resist layer was removed together with the black layer and the metal thin film layer laminated thereon.
【００１２】また、上記の発明において、レジスト層を
剥離した後にクロメート処理をするように構成してもよ
い。In the above invention, a chromate treatment may be performed after removing the resist layer.
【００１３】[0013]
【発明の実施の形態】図面を参照しながらこの発明の実
施の形態について詳しく説明する。Embodiments of the present invention will be described in detail with reference to the drawings.
【００１４】図１はこの発明の電磁波シールド材料の一
実施例を示す断面図、図２〜４はこの発明の電磁波シー
ルド材料の製造工程を示す断面図である。図中、１は透
明基体、２は黒色層、３は金属薄膜層、４はレジスト層
である。FIG. 1 is a cross-sectional view showing one embodiment of the electromagnetic wave shielding material of the present invention, and FIGS. 2 to 4 are cross-sectional views showing steps of manufacturing the electromagnetic wave shielding material of the present invention. In the figure, 1 is a transparent substrate, 2 is a black layer, 3 is a metal thin film layer, and 4 is a resist layer.
【００１５】この発明の透視性電磁波シールド材料は、
透明基体１上に、金属酸化物または金属硫化物からなる
黒色層２と、金属薄膜層３とが電磁波シールドパターン
形状に少なくとも順次積層されたものである（図１参
照）。[0015] The transparent electromagnetic wave shielding material of the present invention comprises:
A black layer 2 made of a metal oxide or a metal sulfide and a metal thin film layer 3 are at least sequentially laminated on a transparent substrate 1 in an electromagnetic shield pattern shape (see FIG. 1).
【００１６】このような構成の透視性電磁波シールド材
料を得るには、次のようにするとよい。In order to obtain a see-through electromagnetic wave shielding material having such a configuration, the following may be performed.
【００１７】まず、透明基体１上に、電磁波シールドパ
ターン形状と逆パターンのレジスト層４を形成する。First, a resist layer 4 having a pattern opposite to that of the electromagnetic wave shield pattern is formed on the transparent substrate 1.
【００１８】透明基体１としては、ガラス、アクリル樹
脂、ポリカーボネイト、ポリエチレン、ＡＳ樹脂、酢酸
ビニル樹脂、ポリスチレン、ポリプロピレン、ポリエス
テル、ポリサルホン、ポリ塩化ビニルなどの透明なもの
を用いるとよい。As the transparent substrate 1, a transparent material such as glass, acrylic resin, polycarbonate, polyethylene, AS resin, vinyl acetate resin, polystyrene, polypropylene, polyester, polysulfone, or polyvinyl chloride may be used.
【００１９】レジスト層４は、ポジ型もしくはネガ型レ
ジスト液を透明基体１上に塗布し乾燥させ、パターン露
光し、現像することにより得ることができる（図２参
照）。レジストパターン形状は、得ようとする電磁波シ
ールドパターン形状と逆パターンにする。すなわち、得
ようとする電磁波シールドパターン形状をポジとすれ
ば、このポジに対応するネガとなっている。電磁波シー
ルドパターン形状としては、導電層の線幅10〜50μｍ、
線間ピッチ50〜500μｍの格子状パターンなどとすると
よい。線幅および線間ピッチを決めるには、電磁波シー
ルド材料の電磁波シールドレベルおよび光透過レベルを
考慮するとよい。すなわち、電磁波シールドレベルを高
くかつ光透過レベルも高くするには、線幅および線間ピ
ッチの両方を小さくするとよい。The resist layer 4 can be obtained by applying a positive type or negative type resist solution on the transparent substrate 1, drying, pattern-exposing, and developing (see FIG. 2). The shape of the resist pattern is the reverse of the shape of the electromagnetic wave shield pattern to be obtained. That is, if the shape of the electromagnetic wave shield pattern to be obtained is positive, it is a negative corresponding to this positive. As the electromagnetic wave shield pattern shape, the line width of the conductive layer is 10 to 50 μm,
It is preferable to use a grid pattern having a line pitch of 50 to 500 μm. In order to determine the line width and the line pitch, the electromagnetic wave shielding level and the light transmission level of the electromagnetic wave shielding material may be considered. That is, in order to increase the electromagnetic wave shielding level and the light transmission level, it is preferable to reduce both the line width and the line pitch.
【００２０】次いで、金属酸化物または金属硫化物から
なる黒色層２を全面的に形成する（図３参照）。黒色層
２は、蒸着法、スパッタリング法、イオンプレーティン
グ法などで形成するとよい。黒色層２はこれらの真空成
膜法により形成すると、密着強度および耐久性に優れた
ものとなる。黒色層２は、金属酸化物または金属硫化物
からなるものである。具体的には、金属酸化物として
は、ＩＴＯ、酸化クロム、酸化スズ、酸化銀、酸化コバ
ルト、酸化水銀、酸化金、酸化イリジウムなどを用いる
とよい。また、金属硫化物としては、硫化クロム、硫化
パラジウム、硫化ニッケル、硫化銅、硫化コバルト、硫
化鉄、硫化タンタル、硫化チタンなどを用いるとよい。
黒色層２の厚みは、0.05〜1.0μｍが適当である。Next, a black layer 2 made of a metal oxide or a metal sulfide is entirely formed (see FIG. 3). The black layer 2 may be formed by an evaporation method, a sputtering method, an ion plating method, or the like. When the black layer 2 is formed by these vacuum film forming methods, the black layer 2 has excellent adhesion strength and durability. The black layer 2 is made of a metal oxide or a metal sulfide. Specifically, as the metal oxide, ITO, chromium oxide, tin oxide, silver oxide, cobalt oxide, mercury oxide, gold oxide, iridium oxide, or the like may be used. As the metal sulfide, chromium sulfide, palladium sulfide, nickel sulfide, copper sulfide, cobalt sulfide, iron sulfide, tantalum sulfide, titanium sulfide, or the like may be used.
The thickness of the black layer 2 is suitably 0.05 to 1.0 μm.
【００２１】次いで、金属薄膜層３を黒色層２の上に全
面的に形成する（図４参照）。金属薄膜層３は、蒸着
法、スパッタリング法、イオンプレーティング法などで
形成するとよい。金属薄膜層３はこれらの真空成膜法に
より形成すると、密着強度および耐久性に優れたものと
なる。また、金属薄膜層３としては、銅、銀、金、ニッ
ケルなどを用いるとよい。なお、金属薄膜層３として使
用する金属の種類は、黒色層２として使用する金属酸化
物または金属硫化物の種類と特に関係なく選択すること
ができる。金属薄膜層３の厚みは、0.1〜5.0μｍが適当
である。Next, a metal thin film layer 3 is formed entirely on the black layer 2 (see FIG. 4). The metal thin film layer 3 may be formed by an evaporation method, a sputtering method, an ion plating method, or the like. When the metal thin film layer 3 is formed by these vacuum film forming methods, it becomes excellent in adhesion strength and durability. Further, as the metal thin film layer 3, copper, silver, gold, nickel, or the like may be used. The type of metal used as the metal thin film layer 3 can be selected regardless of the type of metal oxide or metal sulfide used as the black layer 2. The appropriate thickness of the metal thin film layer 3 is 0.1 to 5.0 μm.
【００２２】次いで、レジスト層４をその上に積層され
た黒色層２と金属薄膜層３とともに除去する。Next, the resist layer 4 is removed together with the black layer 2 and the metal thin film layer 3 laminated thereon.
【００２３】その後、レジスト層４とともに、その上に
積層された黒色層２と金属薄膜層３を除去する（図１参
照）。レジスト層４を除去するには、水酸化ナトリウム
水溶液などの剥離液を用いるとよい。レジスト層４上に
形成された黒色層２と金属薄膜層３は、被覆状態が不完
全であり、レジスト層４の縁で黒色層２および金属薄膜
層３に割れ目が生じ、剥離液が浸入してレジスト層４を
膨潤、溶解させる。Thereafter, the black layer 2 and the metal thin film layer 3 laminated thereon are removed together with the resist layer 4 (see FIG. 1). In order to remove the resist layer 4, a stripping solution such as an aqueous solution of sodium hydroxide may be used. The black layer 2 and the metal thin film layer 3 formed on the resist layer 4 are incompletely covered, and cracks are formed in the black layer 2 and the metal thin film layer 3 at the edges of the resist layer 4, and the stripping liquid enters. Then, the resist layer 4 is swollen and dissolved.
【００２４】このようにして、透視性電磁波シールド材
料を得ることができる。Thus, a transparent electromagnetic wave shielding material can be obtained.
【００２５】なお、透視性電磁波シールド材料は、金属
薄膜層３上に防錆層が形成されたものであってもよい。
防錆層としては、たとえば金属薄膜層３が銅からなるも
のである場合、ニッケルめっき層を厚さ0.2〜1.0μｍで
形成するとよい。The transparent electromagnetic wave shielding material may be a material in which a rust prevention layer is formed on the metal thin film layer 3.
When the metal thin film layer 3 is made of copper, for example, as the rust-preventive layer, a nickel plating layer having a thickness of 0.2 to 1.0 μm may be formed.
【００２６】また、防錆層を形成するために、レジスト
層４を剥離した後にクロメート処理をしてもよい。クロ
メート処理としては、たとえばリン酸・クロム酸処理法
と呼ばれる酸性クロメート処理がある。リン酸・クロム
酸塩を主成分とする水溶液中に浸漬して40℃にて１〜２
分間処理することにより防錆層を形成することができ
る。Further, in order to form a rust preventive layer, a chromate treatment may be performed after the resist layer 4 is peeled off. As the chromate treatment, for example, there is an acidic chromate treatment called a phosphoric acid / chromic acid treatment method. Immerse in an aqueous solution containing phosphoric acid and chromate as the main component,
The rust-proof layer can be formed by treating for minutes.
【００２７】[0027]
【実施例】実施例１ 厚さ３ｍｍ、300ｍｍ角のガラス板上に電磁波シールド
パターン形状とは逆パターンにレジスト部をスクリーン
印刷法により形成し、80℃で30分間乾燥した。EXAMPLES Example 1 A resist portion was formed on a glass plate having a thickness of 3 mm and a square of 300 mm in a pattern opposite to the electromagnetic wave shield pattern by a screen printing method, and dried at 80 ° C. for 30 minutes.
【００２８】次に、スパッタリング法により、酸化銅、
銅を順にそれぞれ0.3μｍの厚みで全面的に積層して黒
色層と金属薄膜層とを形成した。Next, copper oxide,
Copper was sequentially laminated over the entire surface with a thickness of 0.3 μm to form a black layer and a metal thin film layer.
【００２９】次に、５％の水酸化ナトリウム水溶液を剥
離液として用い、レジスト層およびその上の黒色層と金
属薄膜層とを除去した。Next, using a 5% aqueous sodium hydroxide solution as a stripping solution, the resist layer and the black layer and the metal thin film layer thereon were removed.
【００３０】次に、クロメート処理により金属薄膜層の
表面に防錆加工を施し、線幅30μｍ、線間ピッチ125μ
ｍの格子状パターンの導電部が形成された透視性電磁波
シールド材料を得た。Next, the surface of the metal thin film layer is subjected to a rust-proofing process by chromate treatment, and the line width is 30 μm and the line pitch is 125 μm.
Thus, a see-through electromagnetic wave shielding material having a conductive portion having a lattice pattern of m was obtained.
【００３１】このようにして得られた透視性電磁波シー
ルド材料は導電性が高く、透明基体側から見たとき、パ
ターン状の導電部分は黒色部によって黒く見えるため、
金属反射が生じず透視しやすいものであった。The see-through electromagnetic wave shielding material thus obtained has high conductivity, and when viewed from the transparent substrate side, the pattern-like conductive portions appear black due to the black portions.
It was easy to see through without metal reflection.
【００３２】実施例２ 厚さ0.1ｍｍ、100ｍｍ角のポリエステルフィルム上にレ
ジスト層をスクリーン印刷法により全面的に形成し、そ
の後電磁波シールドパターン形状とは逆パターンのマス
クで露光、現像をしてレジスト層をパターン化した。Example 2 A resist layer was entirely formed on a polyester film having a thickness of 0.1 mm and a square of 100 mm by a screen printing method. The layers were patterned.
【００３３】次に、イオンプレーティング法により、酸
化銀、銀の順にそれぞれ0.2μｍの厚みで黒色層と金属
薄膜層とを形成した。Next, a black layer and a metal thin film layer were formed to a thickness of 0.2 μm each in the order of silver oxide and silver by ion plating.
【００３４】次に、５％の水酸化ナトリウム水溶液を剥
離液として用い、レジスト層およびその上の黒色層と金
属薄膜層とを除去し、線幅20μｍ、線間ピッチ100μｍ
の格子状パターンの導電部が形成された透視性電磁波シ
ールド材料を得た。Next, using a 5% aqueous solution of sodium hydroxide as a stripping solution, the resist layer, the black layer and the metal thin film layer thereon were removed, and the line width was 20 μm and the line pitch was 100 μm.
The transparent electromagnetic wave shielding material on which the conductive portion of the lattice pattern was formed was obtained.
【００３５】このようにして得られた透視性電磁波シー
ルド材料は導電性が高く、透明基体側から見たとき、パ
ターン状の導電部分は黒色部によって黒く見えるため、
金属反射が生じず透視しやすいものであった。The transparent electromagnetic wave shielding material thus obtained has a high conductivity, and when viewed from the transparent substrate side, the conductive portion in a pattern looks black due to the black portion.
It was easy to see through without metal reflection.
【００３６】[0036]
【発明の効果】この発明は、前記した構成からなるの
で、次のような効果を有する。Since the present invention has the above-described structure, it has the following effects.
【００３７】この発明の電磁波シールド材料は、導電性
に優れた電磁波シールドパターン形状の金属薄膜層によ
って電磁波を遮蔽するので、電磁波シールド性が高いも
のである。また、金属薄膜層の下側には黒色層が積層さ
れているので、導電部分の透明基板側が黒色を呈してお
り、金属反射が生じず透視性にも優れたものである。The electromagnetic wave shielding material of the present invention has a high electromagnetic wave shielding property because the electromagnetic wave is shielded by the metal thin film layer having the electromagnetic wave shielding pattern shape having excellent conductivity. In addition, since the black layer is laminated below the metal thin film layer, the transparent portion of the conductive portion on the transparent substrate side has a black color, and there is no metal reflection and excellent transparency.
【００３８】また、この発明の電磁波シールド材料の製
造方法は、電磁波シールド性に優れ、透視性が良好な上
記の構成の電磁波シールド材料を容易に得ることができ
るものである。特に、フォトエッチングプロセスと比較
するとエッチング工程が省略でき工程短縮が可能とな
る。また、黒色層および金属薄膜層の厚みにかかわらず
電磁波シールドパターン形状に形成できるので、微細な
電磁波シールドパターン形状であっても容易に製造する
ことができる。Further, the method for manufacturing an electromagnetic wave shielding material of the present invention is capable of easily obtaining an electromagnetic wave shielding material having the above-mentioned structure, which has excellent electromagnetic wave shielding properties and good transparency. In particular, as compared with the photo etching process, the etching step can be omitted, and the process can be shortened. In addition, since it can be formed in an electromagnetic wave shield pattern shape regardless of the thickness of the black layer and the metal thin film layer, it can be easily manufactured even in a fine electromagnetic wave shield pattern shape.
【図１】この発明の電磁波シールド材料の一実施例を示
す断面図である。FIG. 1 is a sectional view showing one embodiment of an electromagnetic wave shielding material of the present invention.
【図２】この発明の電磁波シールド材料の製造工程を示
す断面図である。FIG. 2 is a cross-sectional view illustrating a manufacturing process of the electromagnetic wave shielding material of the present invention.
【図３】この発明の電磁波シールド材料の製造工程を示
す断面図である。FIG. 3 is a cross-sectional view showing a manufacturing process of the electromagnetic wave shielding material of the present invention.
【図４】この発明の電磁波シールド材料の製造工程を示
す断面図である。FIG. 4 is a cross-sectional view showing a manufacturing process of the electromagnetic wave shielding material of the present invention.
１ 透明基体 ２ 黒色層 ３ 金属薄膜層 ４ レジスト層 Reference Signs List 1 transparent substrate 2 black layer 3 metal thin film layer 4 resist layer
Claims (4)
化物からなる黒色層と、金属薄膜層とが電磁波シールド
パターン形状に少なくとも順次積層されていることを特
徴とする透視性電磁波シールド材料。1. A transparent electromagnetic wave shielding material comprising a transparent substrate and a black layer made of a metal oxide or metal sulfide and a metal thin film layer laminated at least sequentially in an electromagnetic wave shielding pattern shape.
る請求項１に記載の透視性電磁波シールド材料。2. The see-through electromagnetic wave shielding material according to claim 1, wherein a rust prevention layer is formed on the metal thin film layer.
形状と逆パターンのレジスト層を形成し、次いで金属酸
化物または金属硫化物からなる黒色層を全面的に形成
し、次いでその上に金属薄膜層を全面的に形成し、次い
でレジスト層をその上に積層された黒色層と金属薄膜層
とともに除去することを特徴とする透視性電磁波シール
ド材料の製造方法。3. A resist layer having a pattern opposite to that of an electromagnetic wave shield pattern is formed on a transparent substrate, a black layer made of a metal oxide or a metal sulfide is entirely formed, and a metal thin film layer is formed thereon. , And then removing the resist layer together with the black layer and the metal thin film layer laminated thereon.
理をする請求項３に記載の透視性電磁波シールド材料の
製造方法。4. The method for producing a see-through electromagnetic wave shielding material according to claim 3, wherein a chromate treatment is performed after removing the resist layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10093770A JP2979021B2 (en) | 1998-04-07 | 1998-04-07 | Transparent electromagnetic wave shielding material and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10093770A JP2979021B2 (en) | 1998-04-07 | 1998-04-07 | Transparent electromagnetic wave shielding material and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11298185A true JPH11298185A (en) | 1999-10-29 |
| JP2979021B2 JP2979021B2 (en) | 1999-11-15 |
Family
ID=14091673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10093770A Expired - Lifetime JP2979021B2 (en) | 1998-04-07 | 1998-04-07 | Transparent electromagnetic wave shielding material and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2979021B2 (en) |
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| JP2001331116A (en) * | 2000-05-18 | 2001-11-30 | Bridgestone Corp | Display panel |
| EP1215705A2 (en) * | 2000-12-12 | 2002-06-19 | Nisshinbo Industries, Inc. | Transparent electromagnetic radiation shielding material |
| JP2002198688A (en) * | 2000-10-19 | 2002-07-12 | Nisshinbo Ind Inc | See-through electromagnetic wave shield and near infrared ray cut material and method for manufacturing the same |
| JP2002341780A (en) * | 2001-05-16 | 2002-11-29 | Bridgestone Corp | Light transmitting window material with shielding property against electromagnetic wave |
| JP2002374093A (en) * | 2001-06-13 | 2002-12-26 | Bridgestone Corp | Electromagnetic wave shielding light transmitting window material and its producing method |
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| JP2006140220A (en) * | 2004-11-10 | 2006-06-01 | Bridgestone Corp | Low-reflectivity conductive film, electromagnetic wave shielding film, and electromagnetic wave shielding translucent window material |
| JP2006140205A (en) * | 2004-11-10 | 2006-06-01 | Toppan Printing Co Ltd | Electromagnetic wave shielding material, its manufacturing method and display film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001331116A (en) * | 2000-05-18 | 2001-11-30 | Bridgestone Corp | Display panel |
| JP2002198688A (en) * | 2000-10-19 | 2002-07-12 | Nisshinbo Ind Inc | See-through electromagnetic wave shield and near infrared ray cut material and method for manufacturing the same |
| EP1215705A2 (en) * | 2000-12-12 | 2002-06-19 | Nisshinbo Industries, Inc. | Transparent electromagnetic radiation shielding material |
| EP1215705A3 (en) * | 2000-12-12 | 2003-05-21 | Nisshinbo Industries, Inc. | Transparent electromagnetic radiation shielding material |
| JP2002341780A (en) * | 2001-05-16 | 2002-11-29 | Bridgestone Corp | Light transmitting window material with shielding property against electromagnetic wave |
| JP2002374093A (en) * | 2001-06-13 | 2002-12-26 | Bridgestone Corp | Electromagnetic wave shielding light transmitting window material and its producing method |
| CN100438738C (en) * | 2002-08-08 | 2008-11-26 | 大日本印刷株式会社 | Electromagnetic wave shielding sheet |
| WO2004039137A1 (en) * | 2002-10-25 | 2004-05-06 | Nikko Materials Co., Ltd. | Plasma display panel-use copper foil and production method therefor |
| JP2006140220A (en) * | 2004-11-10 | 2006-06-01 | Bridgestone Corp | Low-reflectivity conductive film, electromagnetic wave shielding film, and electromagnetic wave shielding translucent window material |
| JP2006140205A (en) * | 2004-11-10 | 2006-06-01 | Toppan Printing Co Ltd | Electromagnetic wave shielding material, its manufacturing method and display film |
| WO2006112535A1 (en) * | 2005-04-18 | 2006-10-26 | Seiren Co., Ltd. | Transparent electrically conductive film and process for producing the same |
| US7883837B2 (en) | 2005-04-18 | 2011-02-08 | Seiren Co., Ltd. | Transparent electrically conductive film and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2979021B2 (en) | 1999-11-15 |
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