JPH11292681A - Bridgman-type single crystal growing apparatus - Google Patents
Bridgman-type single crystal growing apparatusInfo
- Publication number
- JPH11292681A JPH11292681A JP9142798A JP9142798A JPH11292681A JP H11292681 A JPH11292681 A JP H11292681A JP 9142798 A JP9142798 A JP 9142798A JP 9142798 A JP9142798 A JP 9142798A JP H11292681 A JPH11292681 A JP H11292681A
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- Prior art keywords
- single crystal
- heating
- zone
- temperature
- crystal growing
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ブリッジマン型単
結晶育成装置に係わり、さらに詳しくは、成長させる単
結晶を均質化させることのできるブリッジマン型単結晶
育成装置に関する。The present invention relates to a Bridgman-type single crystal growing apparatus, and more particularly to a Bridgman-type single crystal growing apparatus capable of homogenizing a single crystal to be grown.
【０００２】[0002]
【従来の技術】従来のこの種のブリッジマン型単結晶育
成装置としての各別例による概要構成を図３及び図４に
示す。2. Description of the Related Art FIGS. 3 and 4 show schematic structures of different examples of a conventional Bridgman-type single crystal growing apparatus of this type.
【０００３】図３の単結晶育成装置は、中空炉心管内で
単結晶を育成するるつぼを支持台によって支持すると共
に、該支持台、ひいては、るつぼ自体を下方へ制御移動
して単結晶を育成する方式の構成であり、同図におい
て、符号１１は、上下方向に配置された中空炉心管、１
２は、該中空炉心管１１の管軸方向に設定された単結晶
育成帯域を示し、また、１４は、前記中空炉心管１１の
内部に配置されて単結晶を育成するるつぼ、１６は、る
つぼ１４を下方から支持する支持台で、図示省略した昇
降手段によって上下方向へ制御移動可能にしてある。そ
して、前記単結晶育成帯域１２には、中空炉心管１１の
外周囲にあって、上方から所定範囲に亘る高温加熱部１
２ａと、該高温加熱部１２ａとの間に所要の断熱部１２
ｂを介して同様に所定範囲の低温加熱部１２ｃとを順次
に設けてある。In the single crystal growing apparatus shown in FIG. 3, a crucible for growing a single crystal is supported by a support in a hollow core tube, and the support and the crucible itself are controlled to move downward to grow a single crystal. In the figure, reference numeral 11 denotes a hollow core tube arranged in a vertical direction, 1
Reference numeral 2 denotes a single crystal growing zone set in the tube axis direction of the hollow core tube 11, reference numeral 14 denotes a crucible which is disposed inside the hollow core tube 11 to grow a single crystal, and reference numeral 16 denotes a crucible. The support base 14 supports the unit 14 from below, and can be controlled to move in the vertical direction by lifting means (not shown). The single crystal growing zone 12 includes a high-temperature heating unit 1 that is located outside the hollow core tube 11 and extends over a predetermined range from above.
2a and the required heat insulating portion 12 between the high temperature heating portion 12a.
Similarly, a predetermined range of the low-temperature heating unit 12c is sequentially provided via the line b.
【０００４】上記図３の装置構成において、単結晶の育
成操作は、支持台１６の昇降作動により、先ず、炉心管
１１内で内部に単結晶原料１５を容納したるつぼ１４を
単結晶育成帯域１２の上方所定位置へ一旦上昇させてお
き、引続き、所定速度で徐々に下降するように制御移動
させ、高温加熱部１２ａと低温加熱部１２ｃとで所要の
温度勾配を設定した単結晶育成帯域１２を通過させる。In the apparatus configuration shown in FIG. 3, a single crystal growing operation is performed by first moving a crucible 14 containing a single crystal raw material 15 therein into a single crystal growing zone 12 by raising and lowering a support 16. The single crystal growing zone 12 in which the required temperature gradient is set between the high-temperature heating unit 12a and the low-temperature heating unit 12c is controlled by moving it up once to a predetermined position above and then gradually lowering it at a predetermined speed. Let it pass.
【０００５】この場合、単結晶育成帯域１２内の温度分
布については、図５に示す如く、上部側の高温加熱部１
２ａで育成結晶の融点温度よりも高くされ、かつ下部側
の低温加熱部１２ｃにかけて次第に低くされる急峻な温
度勾配を有しており、このように設定された温度分布の
単結晶育成帯域１２内を通過させることで、るつぼ１４
内の単結晶原料１５は、上部の高温領域で一旦溶融され
ると共に、該溶融に基づいて結晶成長が開始され、かつ
急峻な温度勾配の低温領域を経て次第に冷却固化され、
このようにして所期通りの結晶化がなされる。In this case, as shown in FIG. 5, the temperature distribution in the single crystal growing zone 12 is such that the upper high-temperature heater 1
2a has a steep temperature gradient that is higher than the melting point temperature of the grown crystal and gradually lowers toward the lower-temperature heating section 12c on the lower side. By passing the crucible 14
Is melted once in the upper high-temperature region, crystal growth is started based on the melting, and gradually cooled and solidified through a low-temperature region with a steep temperature gradient,
In this way, crystallization is performed as expected.
【０００６】ここで、上記単結晶の育成に際し、溶融原
料を全体に亘って一様に結晶化成長させるためには、通
常の場合、図６に示す如く、るつぼ１４の下部に種結晶
を配した上で、少なくともその一部は育成中に溶融され
ないように、炉内下部の低温領域に位置させて実施す
る。すなわち、このように配慮することで、種結晶の溶
融されていない結晶方位に一致した一様な結晶化が得ら
れるのである。Here, in growing the single crystal, in order to uniformly crystallize and grow the molten raw material over the whole, usually, a seed crystal is arranged below the crucible 14 as shown in FIG. After that, at least a part thereof is placed in a low temperature region in the lower part of the furnace so as not to be melted during the growth. That is, by taking such consideration into consideration, uniform crystallization can be obtained in accordance with the unmelted crystal orientation of the seed crystal.
【０００７】また、図４の単結晶育成装置は、前記るつ
ぼ１４の支持を前記支持台１６に代えてワイヤ１７によ
って上方から吊下する方式を適用した場合であり、上記
図３の装置構成の場合と全く同様に操作して単結晶を育
成するものである。The single crystal growing apparatus shown in FIG. 4 employs a system in which the crucible 14 is suspended from above by a wire 17 in place of the support 16 instead of the support 16. A single crystal is grown by performing the same operation as in the case.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、上記従
来構成によるブリッジマン型単結晶育成装置の場台、単
結晶育成帯域を通過するるつぼについては、先に述べた
ように、急峻な温度勾配による低温領域を経て冷却され
るため、必然的にその上下部分で該温度勾配に対応した
温度差を残しており、この結果として、成長される単結
晶自体に関しても同様な温度勾配を生じたままで冷却さ
れることから、このときの熱歪みの影響によって得られ
る単結晶の上下方向を通した均一化、均質性が損なわ
れ、これが甚しい場合には、成長された単結晶にクラッ
クを生じて全体が破損する等の好ましくない問題点があ
った。However, as described above, the base of the Bridgman-type single crystal growing apparatus having the above-mentioned conventional structure and the crucible passing through the single crystal growing zone have a low temperature due to a steep temperature gradient. Since the cooling is performed through the region, a temperature difference corresponding to the temperature gradient is inevitably left in the upper and lower portions, and as a result, the single crystal to be grown is cooled with the same temperature gradient generated. Therefore, the homogeneity and homogeneity of the single crystal obtained through the influence of thermal strain at this time in the vertical direction are impaired, and if this is severe, cracks occur in the grown single crystal and the whole There were undesired problems such as breakage.
【０００９】本発明は、従来のこのような問題点を解消
するためになされたもので、効果的な単結晶育成を常時
安定して行い得るようにしたブリッジマン型単結晶育成
装置を提供することを目的とする。The present invention has been made in order to solve such a conventional problem, and provides a Bridgman-type single crystal growing apparatus capable of constantly and stably performing effective single crystal growth. The purpose is to:
【００１０】[0010]
【課題を解決するための手段】前記目的を達成するため
に、本発明によれば、単結晶育成帯域の下方にあって、
成長される単結晶を均質化するためのアニール用加温帯
域を設けた。According to the present invention, in order to attain the above object, there is provided a semiconductor device, comprising:
A heating zone for annealing was provided to homogenize the grown single crystal.
【００１１】すなわち、本発明に係る請求項１に記載の
発明は、上下方向に配した中空炉心管と、該中空炉心管
の管軸方向所定範囲に設定されて、単結晶原料を溶融す
べく急峻な温度勾配に加熱制御される単結晶育成帯域と
を有し、該単結晶育成帯域内で単結晶原料を容納したる
つぼを通過させ、該単結晶原料を溶融して単結晶を成長
させるようにしたブリッジマン型単結晶育成装置におい
て、前記単結晶育成帯域の下方に、該単結晶育成帯域を
経て成長された多結晶を所定の加温温度で所定時間加温
し、かつ加温処理後に徐冷するアニール用の加温帯域を
設けたことを特徴とするものである。That is, according to the first aspect of the present invention, there is provided a hollow core tube arranged vertically, and a single core material set in a predetermined range in the axial direction of the hollow core tube to melt the single crystal raw material. A single crystal growing zone controlled to be heated to a steep temperature gradient, and a single crystal growing material is passed through a crucible containing the single crystal raw material in the single crystal growing zone, and the single crystal raw material is melted to grow a single crystal. In the Bridgman-type single crystal growing apparatus, the polycrystal grown through the single crystal growing zone is heated at a predetermined heating temperature for a predetermined time below the single crystal growing zone, and after the heating process. A heating zone for annealing for slow cooling is provided.
【００１２】請求項１の本発明の単結晶育成装置によれ
ば、単結晶育成帯域を経ることで結晶成長されるるつぼ
が、アニール用加温帯域に至って所要の均一なアニール
温度で所定時間加温された後、該アニール温度を徐冷す
ることにより、結晶成長された単結晶全休の温度が均一
化されて、単結晶育成帯域を経た時点で単結晶全休に生
じている上下方向の温度差が解消される。According to the single crystal growing apparatus of the present invention, the crucible for growing the crystal through the single crystal growing zone is heated for a predetermined time at a required uniform annealing temperature to the annealing heating zone. After being heated, the annealing temperature is gradually cooled, so that the temperature of the whole crystal grown single crystal becomes uniform, and the temperature difference in the vertical direction generated in the whole single crystal when passing through the single crystal growth zone. Is eliminated.
【００１３】本発明に係る請求項２に記載の発明は、上
記請求項１のブリッジマン型単結晶育成装置において、
前記アニール用加温帯域の設定範囲が、少なくとも成長
させる単結晶長よりも長い範囲に設定されていることを
特徴とするものである。According to a second aspect of the present invention, there is provided the Bridgman-type single crystal growing apparatus according to the first aspect,
The set range of the annealing heating zone is set to a range longer than at least the length of the single crystal to be grown.
【００１４】請求項２の本発明の単結晶育成装置によれ
ば、結晶成長された単結晶の全体がアニール用加温帯域
の範囲内に保持されることになり、結晶成長された単結
晶全体の温度の均一化が安定的になされる。According to the apparatus for growing a single crystal according to the second aspect of the present invention, the entire crystal-grown single crystal is maintained within the range of the annealing heating zone, and the entire crystal-grown single crystal is grown. Temperature is stabilized stably.
【００１５】本発明に係る請求項３に記載の発明は、上
記請求項１または２のブリッジマン型単結晶育成装置に
おいて、前記アニール用加温帯域での加温温度、加温時
間及び加温状態からの徐冷制御を、前記単結晶育成帯域
の加熱制御とは無関係に行う加温制御手段を備えること
を特徴とするものである。According to a third aspect of the present invention, there is provided the Bridgman-type single crystal growing apparatus according to the first or second aspect, wherein the heating temperature, the heating time and the heating time in the annealing heating zone. A heating control means for performing slow cooling control from the state independently of the heating control of the single crystal growing zone is provided.
【００１６】請求項３の本発明の単結晶育成装置によれ
ば、加温制御手段によって、アニール用加温帯域での加
温温度、加温時間及び加温状態からの徐冷制御が独立し
てなされため、単結晶育成帯域による単結晶成長に対応
した各制御が可能になる。According to the third aspect of the present invention, the heating control means independently controls the heating temperature, the heating time, and the slow cooling control from the heating state in the annealing heating zone. Therefore, each control corresponding to the single crystal growth by the single crystal growth zone can be performed.
【００１７】本発明に係る請求項４に記載の発明は、上
記請求項１乃至３のいずれか一項のブリッジマン型単結
晶育成装置において、前記アニール用加温帯域での加温
温度を、設定温度の±１０℃以内に維持する加温温度調
整手段を備えることを特徴とするものである。According to a fourth aspect of the present invention, in the Bridgman-type single crystal growing apparatus according to any one of the first to third aspects, the heating temperature in the annealing heating zone is set to: A heating temperature adjusting means for maintaining the temperature within ± 10 ° C. of the set temperature is provided.
【００１８】請求項４の本発明の単結晶育成装置によれ
ば、加温温度調整手段によって、アニール用加温帯域で
の加温温度が設定温度の±１０℃以内に維持されること
になり、可及的に安定した多結晶成長が可能になる。According to the apparatus for growing a single crystal of the present invention, the heating temperature in the heating zone for annealing is maintained within ± 10 ° C. of the set temperature by the heating temperature adjusting means. In addition, polycrystalline growth as stable as possible becomes possible.
【００１９】[0019]
【発明の実施の形態】以下、本発明に係るブリッジマン
型単結晶育成装置の好ましい実施の形態につき、図１及
び図２を参照して詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the Bridgman-type single crystal growing apparatus according to the present invention will be described below in detail with reference to FIGS.
【００２０】図１は、本発明の一実施形態例を適用した
ブリッジマン型単結晶育成装置の概要構成を模式的に示
す断面図であり、図２は、同上装置での中空炉心管内の
温度分布の態様を示す説明図である。これらの実施例各
図において、上記従来例各図と同一符号は同一または相
当部分を示している。FIG. 1 is a cross-sectional view schematically showing a schematic configuration of a Bridgman-type single crystal growing apparatus to which an embodiment of the present invention is applied, and FIG. 2 shows a temperature inside a hollow core tube in the same apparatus. It is explanatory drawing which shows the aspect of distribution. In the drawings of these embodiments, the same reference numerals as those in the above-mentioned conventional examples indicate the same or corresponding parts.
【００２１】図１に示す装置構成おいて、本実施形態例
では、上記単結晶育成帯域１２の下方にあって、該単結
晶育成帯域１２とは熱的干渉を可及的に避けた態様でア
ニール用加温帯域１３を独立して設けると共に、該加温
帯域１３における加温温度、加温時間及び加温状態から
の徐冷制御を単結晶育成帯域１２の加熱制御とは無関係
に行う加温制御手段を設けたものである。In the apparatus configuration shown in FIG. 1, in the present embodiment, in a mode below the single crystal growing zone 12, thermal interference with the single crystal growing zone 12 is avoided as much as possible. The heating zone 13 for annealing is provided independently, and the heating temperature, the heating time, and the slow cooling control from the heating state in the heating zone 13 are performed independently of the heating control in the single crystal growing zone 12. A temperature control means is provided.
【００２２】具体的に述べると、装置全体の主制御装置
２１を設け、前記単結晶育成帯域１２に対する加熱制御
を多結晶成長用温度制御装置２２によって行い、また、
アニール用加温帯域１３の加温加熱部１３ａに対して
は、アニール用温度制御装置（加温制御手段）２３によ
って加温制御し、かつアニール用加温温度調整装置（加
温温度調整手段）２４によって加温温度が設定温度の±
１０℃以内に維持されるように温度調整する。なお、図
１中、符号１８は、前記支持台１６を昇降作動させるる
つぼ昇降手段であり、２４ａは、前記加温加熱部１３ａ
の温度を検出して加温温度調整装置２４に入力する温度
センサである。More specifically, a main controller 21 for the entire apparatus is provided, and heating control for the single crystal growth zone 12 is performed by a polycrystal growth temperature controller 22.
The heating and heating unit 13a of the annealing heating zone 13 is controlled to be heated by an annealing temperature control device (heating control means) 23, and a heating temperature adjusting device for annealing (heating temperature adjusting means). 24 makes the heating temperature ± of the set temperature.
Adjust the temperature so that it is maintained within 10 ° C. In FIG. 1, reference numeral 18 denotes a crucible lifting / lowering means for raising / lowering the support base 16, and 24a denotes the heating / heating unit 13a.
Is a temperature sensor that detects the temperature of the temperature and inputs it to the warming temperature adjusting device 24.
【００２３】ここで、本実施形態例装置によってＬｉ2
Ｂ4 Ｏ7 単結晶を育成する場合につき、図２及び図６も
参照して述べる。この場合、前記単結晶育成帯域１２の
高温加熱部１２ａ及び低温加熱部１２ｃによる各加熱に
よって、前記るつぼ１４における原料溶融部３１は、約
９６０℃に保持され、結晶育成部分には、１０℃／cmの
急峻な温度勾配が与えられており、種結晶溶融部３２を
除いた種結晶非溶融部３３は加熱部分外に保持される。
一方、前記中空炉心管１１の温度が下方でのアニール温
度よりも低くなるだけの距離を隔ててアニール用加温加
熱部１３ａを設けてあり、該加温加熱部１３ａのアニー
ル温度は、約８００℃に設定され、かつ該アニール温度
をここでのアニール処理に比較的影響を与える恐れのな
い±１０℃以内の範囲に維持している。Here, Li 2 is used by the apparatus of this embodiment.
The case of growing a B 4 O 7 single crystal will be described with reference to FIGS. In this case, the raw material melting part 31 of the crucible 14 is maintained at about 960 ° C. by the respective heating by the high-temperature heating part 12 a and the low-temperature heating part 12 c of the single crystal growing zone 12, and the crystal growing part has a temperature of 10 ° C. / A steep temperature gradient of cm is provided, and the seed crystal non-melted portion 33 excluding the seed crystal melted portion 32 is held outside the heated portion.
On the other hand, an annealing heating unit 13a is provided at a distance such that the temperature of the hollow core tube 11 is lower than the annealing temperature at the bottom, and the annealing temperature of the heating unit 13a is about 800 ° C and the annealing temperature is maintained within a range of ± 10 ° C which does not relatively affect the annealing process.
【００２４】上記状態において、本実施形態例装置で
は、従来通りにＬｉ2 Ｂ4 Ｏ7 単結晶育成を行った上
で、下降されてくるるつぼ１４、ひいては成長された単
結晶がアニール用加温加熱部１３ａでの均熱加温領域内
に到達した時点で、該るつぼ１４の下降を一旦停止し、
その成長された単結晶を約５時間に亘ってアニール処理
した。引続き、このようにアニール処理を終了した上
で、加温加熱部１３ａを５０℃／時間の条件で徐冷して
所期通りのＬｉ2 Ｂ4 Ｏ7 単結晶を得た。このようにし
て得られるＬｉ2 Ｂ4 Ｏ7 単結晶は、従来のようにクラ
ックを発生しておらず、全体的に均一化され、かつ均質
性に擾れた良好なものであった。In the above state, in the apparatus of this embodiment, the Li 2 B 4 O 7 single crystal is grown in the conventional manner, and then the crucible 14 descending, and further, the grown single crystal is heated for annealing. When the crucible 14 reaches the uniform heating zone in the heating unit 13a, the descent of the crucible 14 is temporarily stopped,
The grown single crystal was annealed for about 5 hours. Subsequently, after the annealing treatment was completed as described above, the heating and heating unit 13a was gradually cooled under the condition of 50 ° C./hour to obtain a desired Li 2 B 4 O 7 single crystal. The Li 2 B 4 O 7 single crystal thus obtained did not have any cracks as in the prior art, was uniform throughout, and was excellent in homogeneity.
【００２５】なお、以上の実施形態においては、Ｌｉ2
Ｂ4 Ｏ7 単結晶を得る場合について述べたが、同種の単
結晶を得る場台にも同様に適用することが可能である。In the above embodiment, Li 2
Although the case of obtaining a B 4 O 7 single crystal has been described, the present invention can be similarly applied to a stage for obtaining a single crystal of the same kind.
【００２６】[0026]
【発明の効果】以上、実施形態例によって詳述したよう
に、本発明装置によれば、単結晶育成帯域の下方にアニ
ール用加温帯域を設け、該加温帯域での加温温度制御、
加温時間制御及び徐冷制御を所期通りに行うだけの簡単
な手段によるのみで、成長される単結晶の熱歪み等を容
易に除去でき、常に安定して単結晶を育成し得るという
優れた特長がある。As described above in detail with the embodiment, according to the apparatus of the present invention, a heating zone for annealing is provided below the single crystal growing zone, and the heating temperature control in the heating zone is performed.
By simply performing the heating time control and the slow cooling control only as intended, thermal strain of the grown single crystal can be easily removed, and the single crystal can always be stably grown. There are features.
【図１】本発明によるブリッジマン型単結晶育成装置の
主要部構成の概要を模式的に示す断面図。FIG. 1 is a cross-sectional view schematically showing an outline of a main configuration of a Bridgman-type single crystal growing apparatus according to the present invention.
【図２】本発明によるブリッジマン型単結晶育成装置で
の炉心管内の温度分布の態様を示す説明図。FIG. 2 is an explanatory diagram showing an aspect of a temperature distribution in a furnace tube in the Bridgman-type single crystal growing apparatus according to the present invention.
【図３】従来のブリッジマン型単結晶育成装置の一例に
よる主要部構成の概要を模式的に示す断面図。FIG. 3 is a cross-sectional view schematically showing an outline of a main part configuration of an example of a conventional Bridgman single crystal growing apparatus.
【図４】従来のブリッジマン型単結晶育成装置の他例に
よる主要部構成の概要を横式的に示す断面図。FIG. 4 is a cross-sectional view schematically showing the outline of the main part configuration of another example of the conventional Bridgman-type single crystal growing apparatus.
【図５】図３の一例によるブリッジマン型単結晶育成装
置での炉心管内の温度分布の態様を示す説明図。FIG. 5 is an explanatory view showing a mode of a temperature distribution in a core tube in the Bridgman-type single crystal growing apparatus according to the example of FIG. 3;
【図６】図３の一例によるブリッジマン型単結晶育成装
置における育成開始時の種結晶及び単結晶原料の溶融状
態を示す説明図。FIG. 6 is an explanatory diagram showing a molten state of a seed crystal and a single crystal raw material at the start of growth in a Bridgman-type single crystal growth apparatus according to an example of FIG. 3;
１１…炉心管 １２…単結晶育成帯域 １２ａ…高温加熱部 １２ｂ…断熱部 １２ｃ…低温加熱部 １３…アニール用加温帯域 １３ａ…加温加熱部 １４…るつぼ １５…単結晶育成原料 １６…支持台 １７…ワイヤ １８…るつぼ昇降手段 ２１…主制御装置 ２２…多結晶成長用温度制御装置 ２３…アニール用温度制御装置（加温制御手段） ２４…アニール用加温温度調整装置（加温温度調整手
段） ２４ａ…温度センサ ３１…原料溶融部 ３２…種結晶溶融部 ３３…種結晶非溶融部DESCRIPTION OF SYMBOLS 11 ... Furnace tube 12 ... Single crystal growing zone 12a ... High temperature heating part 12b ... Heat insulating part 12c ... Low temperature heating part 13 ... Heating zone for annealing 13a ... Heating heating part 14 ... Crucible 15 ... Single crystal growing raw material 16 ... Support base DESCRIPTION OF SYMBOLS 17 ... Wire 18 ... Crucible raising / lowering means 21 ... Main controller 22 ... Temperature control apparatus for polycrystal growth 23 ... Temperature control apparatus for annealing (heating control means) 24 ... Heating temperature adjustment apparatus for annealing (heating temperature adjusting means) 24a: temperature sensor 31: raw material melting part 32: seed crystal melting part 33: seed crystal non-melting part
Claims (4)
炉心管の管軸方向所定範囲に設定されて、単結晶原料を
溶融すべく急峻な温度勾配に加熱制御される単結晶育成
帯域とを有し、該単結晶育成帯域内で単結晶原料を容納
したるつぼを通過させ、該単結晶原料を溶融して単結晶
を成長させるブリッジマン型単結晶育成装置において、 前記単結晶育成帯域の下方に、該単結晶育成帯域を経て
成長された多結晶を所定の加温温度で所定時間加温し、
かつ加温処理後に徐冷するアニール用の加温帯域を設け
たことを特徴とするブリッジマン型単結晶育成装置。1. A hollow core tube arranged in a vertical direction, and a single crystal growing zone set in a predetermined range in a tube axis direction of the hollow core tube and heated and controlled to a steep temperature gradient to melt a single crystal raw material. In a Bridgman-type single crystal growing apparatus that passes a crucible containing a single crystal raw material in the single crystal growing zone and melts the single crystal raw material to grow a single crystal, the single crystal growing zone Below, the polycrystal grown through the single crystal growth zone is heated at a predetermined heating temperature for a predetermined time,
A Bridgman-type single crystal growing apparatus, wherein a heating zone for annealing for gradually cooling after the heating treatment is provided.
少なくとも成長させる単結晶長よりも長い範囲に設定さ
れていることを特徴とする請求項１記載のブリッジマン
型単結晶育成装置。2. The setting range of the annealing heating zone is as follows:
2. The apparatus for growing a Bridgman single crystal according to claim 1, wherein the length is set to be at least longer than the length of the single crystal to be grown.
加温時間及び加温状態からの徐冷制御を、前記単結晶育
成帯域の加熱制御とは無関係に行う加温制御手段を備え
ることを特徴とする請求項１または２記載のブリッジマ
ン型単結晶育成装置。3. A heating temperature in the annealing heating zone,
The Bridgman-type single crystal according to claim 1 or 2, further comprising heating control means for performing a heating time and a slow cooling control from a heating state independently of the heating control of the single crystal growing zone. Breeding equipment.
設定温度の±１０℃以内に維持する加温温度調整手段を
備えることを特徴とする請求項１乃至３のいずれか一項
記載のブリッジマン型単結晶育成装置。4. A heating temperature of the heating zone for annealing is:
The Bridgman-type single crystal growing apparatus according to any one of claims 1 to 3, further comprising a heating temperature adjusting unit that maintains the temperature within ± 10 ° C of the set temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9142798A JPH11292681A (en) | 1998-04-03 | 1998-04-03 | Bridgman-type single crystal growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9142798A JPH11292681A (en) | 1998-04-03 | 1998-04-03 | Bridgman-type single crystal growing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11292681A true JPH11292681A (en) | 1999-10-26 |
Family
ID=14026084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9142798A Pending JPH11292681A (en) | 1998-04-03 | 1998-04-03 | Bridgman-type single crystal growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11292681A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007217199A (en) * | 2006-02-14 | 2007-08-30 | Daiichi Kiden:Kk | Method and apparatus for manufacturing single crystal |
| CN103114335A (en) * | 2011-11-17 | 2013-05-22 | 通用电气公司 | Method for producing cadmium telluride or cadmium zinc telluride single crystal |
-
1998
- 1998-04-03 JP JP9142798A patent/JPH11292681A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007217199A (en) * | 2006-02-14 | 2007-08-30 | Daiichi Kiden:Kk | Method and apparatus for manufacturing single crystal |
| CN103114335A (en) * | 2011-11-17 | 2013-05-22 | 通用电气公司 | Method for producing cadmium telluride or cadmium zinc telluride single crystal |
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