JPH11268281A - Fabrication of nozzle plate and method for machining silicon substrate - Google Patents
Fabrication of nozzle plate and method for machining silicon substrateInfo
- Publication number
- JPH11268281A JPH11268281A JP7102898A JP7102898A JPH11268281A JP H11268281 A JPH11268281 A JP H11268281A JP 7102898 A JP7102898 A JP 7102898A JP 7102898 A JP7102898 A JP 7102898A JP H11268281 A JPH11268281 A JP H11268281A
- Authority
- JP
- Japan
- Prior art keywords
- type silicon
- single crystal
- silicon single
- crystal substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000003754 machining Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000866 electrolytic etching Methods 0.000 claims abstract description 9
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000007743 anodising Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- -1 ethanol is added Chemical compound 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、インクジェット記
録装置に用いられるノズルプレートの製造方法およびシ
リコン基板の加工方法に関する。The present invention relates to a method for manufacturing a nozzle plate used in an ink jet recording apparatus and a method for processing a silicon substrate.
【０００２】[0002]
【従来の技術】近年、インクジェット記録装置には、ま
すます高解像度で高速な印刷が要求されている。この要
求に応えるため、フェイスイジェクト型と呼ばれるヘッ
ド基板の面部に形成されたノズルよりインク滴を吐出す
る形式が考案された。この形式は、構造上ノズルを多数
配設することができるため、高密度化が可能となり、高
解像・高速印刷の要求に応えられるものである。2. Description of the Related Art In recent years, an ink jet recording apparatus has been required to perform higher-resolution and higher-speed printing. In order to respond to this demand, a type of ejecting ink droplets from nozzles formed on the surface of the head substrate, called a face eject type, has been devised. In this type, since a large number of nozzles can be arranged on the structure, the density can be increased, and the demand for high resolution and high speed printing can be met.
【０００３】このフェイスイジェクト型インクジェット
記録装置は、印字品質確保のため、ノズルプレートのノ
ズル内部がノズルプレート面に対して垂直形状であるこ
とが要求される。このため、ノズルプレートとしてシリ
コン基板を用いた場合には、 １）半導体製造の分野で採用されているトレンチドライ
エッチング法や、２）湿式溝加工技術として「Ｐｒｏｃ
ｅｅｄｉｎｇｓ ＩＥＥＥ ＭＥＭＳ１９９６」の１頁
〜２頁の「ＦＯＲＭＡＴＩＯＮ ＯＦ ＰＯＲＯＵＳ
ＳＩＬＩＣＯＮ」に開示されているような陽極電解法を
用いることが考えられる。この陽極電解法は、光照射環
境下でｎ型シリコン基板の一面をふっ酸水溶液中で陽極
電解する方法である。In this face-ejection type ink jet recording apparatus, the inside of the nozzle of the nozzle plate is required to be perpendicular to the nozzle plate surface in order to ensure print quality. Therefore, when a silicon substrate is used as a nozzle plate, 1) a trench dry etching method used in the field of semiconductor manufacturing, and 2) “Proc” as a wet groove processing technique.
edgings IEEE MEMS 1996 ”, page 1-2,“ FORMATION OF POROUS ”
It is conceivable to use an anodic electrolysis method as disclosed in "SILICON". This anodic electrolysis is a method in which one surface of an n-type silicon substrate is subjected to anodic electrolysis in a hydrofluoric acid aqueous solution under a light irradiation environment.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これら
のうちトレンチドライエッチング法は、次のような２つ
の課題を有している。However, among these, the trench dry etching method has the following two problems.
【０００５】（１）エッチング速度が遅いため、ノズル
穴明けの加工時間が長い。 （２）枚葉処理のため、生産性が低い。(1) Since the etching rate is low, the processing time for drilling the nozzle is long. (2) Low productivity due to single wafer processing.
【０００６】一方、これらのうち陽極電解法は、多数枚
処理が可能なため、ノズルプレートの製造コストダウン
が期待される一方、ｎ型シリコン基板の一面の裏側の面
の一部分に電極を形成して電解するため、多数のノズル
穴を有するノズルプレートでは、シリコン基板の内部抵
抗勾配によって、ノズル穴の加工量がばらつくという課
題を有している。On the other hand, among these, the anodic electrolysis method is capable of processing a large number of sheets, and thus is expected to reduce the production cost of the nozzle plate. Therefore, in a nozzle plate having a large number of nozzle holes, there is a problem that the processing amount of the nozzle holes varies due to the internal resistance gradient of the silicon substrate.
【０００７】本発明は、以上の課題を解決するものでそ
の目的は、高精度でばらつきの少ないノズルを有する高
品質なノズルプレートを生産性よく低価格で提供するこ
とである。また、本発明の別の目的は、シリコン基板に
微細な凹部又は貫通孔を高精度にしかも生産性よく形成
することのできるシリコン基板の加工方法を提供するこ
とである。An object of the present invention is to provide a high-quality nozzle plate having nozzles with high accuracy and little variation at a low cost with high productivity. Another object of the present invention is to provide a method for processing a silicon substrate, which can form a fine concave portion or a through hole with high accuracy and high productivity in the silicon substrate.
【０００８】[0008]
【課題を解決するための手段】請求項１のノズルプレー
トの製造方法は、（ａ）ノズルプレート用基板として用
いる結晶方位（１００）のｎ型シリコン単結晶基板の一
方の面に、ノズルパターンに対応した耐エッチングマス
クを形成する工程と、（ｂ）前記ｎ型シリコン単結晶基
板の他方の面に、このｎ型シリコン単結晶基板とオーミ
ック接続が可能な光透過性導電性膜を形成する工程と、
（ｃ）前記ｎ型シリコン単結晶基板の一方の面をアルカ
リ性水溶液に接触させて前記ｎ型シリコン単結晶基板の
異方性エッチングを行い、前記ｎ型シリコン単結晶基板
の一方の面にノズルパターンに対応した未貫通孔を形成
する工程と、（ｄ）前記ｎ型シリコン単結晶基板の一方
の面をふっ酸を含む溶液に接触させた状態で、前記ｎ型
シリコン単結晶基板の他方の面の側から光を照射しなが
ら、前記光透過性導電性膜を陽極として電解エッチング
を行い、前記ｎ型シリコン基板の未貫通孔を更に深い未
貫通孔又は貫通孔にする工程と、を有することを特徴と
する。According to a first aspect of the present invention, there is provided a method of manufacturing a nozzle plate, comprising: (a) forming a nozzle pattern on one surface of an n-type silicon single crystal substrate having a crystal orientation of (100) used as a nozzle plate substrate; Forming a corresponding etching resistant mask; and (b) forming, on the other surface of the n-type silicon single crystal substrate, a light-transmitting conductive film capable of ohmic connection with the n-type silicon single crystal substrate. When,
(C) anisotropic etching of the n-type silicon single-crystal substrate by bringing one surface of the n-type silicon single-crystal substrate into contact with an alkaline aqueous solution to form a nozzle pattern on one surface of the n-type silicon single-crystal substrate; Forming a non-through hole corresponding to (d), and (d) the other surface of the n-type silicon single crystal substrate while one surface of the n-type silicon single crystal substrate is brought into contact with a solution containing hydrofluoric acid Performing an electrolytic etching using the light-transmitting conductive film as an anode while irradiating light from the side of the substrate to make the non-penetrated holes of the n-type silicon substrate into deeper non-penetrated holes or through-holes. It is characterized by.
【０００９】このように、請求項１の発明では、ｎ型シ
リコン単結晶基板の他方の面に光透過性導電性膜を形成
したので、全ノズル穴予定部分に加わる電圧を均一にす
ることができる。このため、ノズル穴加工量のばらつき
が減少し、ノズル穴の精度が向上するとともに、未貫通
のノズル穴数を減少させることができ歩留まりが向上し
た。その結果、高精度なノズルプレートを低価格で生産
することが可能となるという効果がある。As described above, according to the first aspect of the present invention, since the light-transmitting conductive film is formed on the other surface of the n-type silicon single crystal substrate, it is possible to make the voltage applied to all the planned nozzle holes uniform. it can. For this reason, the variation in the amount of processed nozzle holes is reduced, the accuracy of the nozzle holes is improved, and the number of unpenetrated nozzle holes can be reduced, thereby improving the yield. As a result, there is an effect that a highly accurate nozzle plate can be produced at a low price.
【００１０】また、請求項１の発明は、電解エッチング
を行うのに先立ってアルカリ性水溶液を用いて異方性エ
ッチングを行うため、ノズル穴予定部分にエッチングピ
ラミッドが形成される。このため、光照射によって発生
した正孔がこのエッチングピラミッド先端に集中し、そ
の結果、電解エッチングの促進及びノズル穴内部の垂直
性の改善を図ることができるという効果もある。According to the first aspect of the present invention, since anisotropic etching is performed using an alkaline aqueous solution prior to performing electrolytic etching, an etching pyramid is formed at a portion where a nozzle hole is to be formed. For this reason, the holes generated by the light irradiation are concentrated at the tip of the etching pyramid, and as a result, there is an effect that the electrolytic etching can be promoted and the verticality inside the nozzle hole can be improved.
【００１１】請求項１の発明の（ｂ）工程で形成される
光透過性導電性膜とは、ｎ型シリコン単結晶基板に対し
オーミック接合が可能であるとともに光を透過する膜で
あれば良く、例えば酸化錫、インジウム・錫酸化物（Ｉ
ＴＯ）などが挙げられる。この光透過性導電性膜は、
（ｄ）工程における電界エッチングが均一に行われるよ
うな範囲に形成されるが、工程を単純にする観点からい
えば、ｎ型シリコン単結晶基板の他方の面の実質的に全
面に形成されるのが好ましい。The light-transmitting conductive film formed in the step (b) of the first aspect of the present invention may be a film that can form an ohmic junction with an n-type silicon single crystal substrate and transmits light. For example, tin oxide, indium tin oxide (I
TO) and the like. This light-transmitting conductive film is
(D) It is formed in a range where the electric field etching in the step is performed uniformly, but from the viewpoint of simplifying the step, it is formed on substantially the entire other surface of the n-type silicon single crystal substrate. Is preferred.
【００１２】請求項１の発明の（ｄ）工程で用いる電解
液はふっ酸を含む溶液であるが、エタノール等のアルコ
ールを添加すればさらにノズル穴内部の垂直性が改善さ
れる。The electrolytic solution used in the step (d) of the first aspect of the present invention is a solution containing hydrofluoric acid. However, if an alcohol such as ethanol is added, the verticality inside the nozzle hole is further improved.
【００１３】請求項１の発明の（ａ）工程で形成する耐
エッチングマスクの材料としては、ふっ酸に対して溶解
しにくい窒化シリコンや有機膜を用いることができる
が、ふっ酸に溶解する性質をもつ酸化シリコンであって
も、十分な膜厚を有するものであれば用いることができ
る。なお、窒化シリコンや酸化シリコンの形成方法は、
熱処理、ＣＶＤ、スパッタ、蒸着または焼結法などがあ
る。As a material of the etching resistant mask formed in the step (a) of the first aspect of the present invention, silicon nitride or an organic film which is hardly soluble in hydrofluoric acid can be used. Can be used as long as it has a sufficient film thickness. The method for forming silicon nitride and silicon oxide is as follows.
There are a heat treatment, a CVD, a sputtering, a vapor deposition or a sintering method.
【００１４】なお、請求項１の発明のノズルプレートの
製造方法においては、（ｂ）の光透過性導電性膜を形成
する工程を実施した後に（ｃ）の異方性エッチングを行
う工程を実施することもできるし、（ｃ）の異方性エッ
チングを行う工程を実施した後に（ｂ）の光透過性導電
性膜を形成する工程を実施することもできる。In the method of manufacturing a nozzle plate according to the first aspect of the present invention, the step (b) of forming a light-transmitting conductive film is performed, and then the step (c) of performing anisotropic etching is performed. Alternatively, after the step (c) of performing anisotropic etching, the step (b) of forming a light-transmitting conductive film can be performed.
【００１５】請求項１の（ｄ）工程で未貫通孔を形成す
る場合には、必要に応じて、このｎ型シリコン単結晶基
板全体を他方の面側から薄板化したり、この単結晶基板
のノズル穴予定位置近傍を他方の面側からエッチングし
たりして未貫通孔を貫通させ所望のノズル穴にする。In the case where a non-through hole is formed in the step (d) of claim 1, if necessary, the entire n-type silicon single crystal substrate may be made thinner from the other surface side, or the single crystal substrate may be formed. The desired nozzle hole is made by penetrating the non-through hole by etching the vicinity of the nozzle hole expected position from the other surface side.
【００１６】請求項２のシリコン基板の加工方法は、
（ａ）結晶方位（１００）のｎ型シリコン単結晶基板の
一方の面に、耐エッチング膜からなるパターンマスクを
形成する工程と、（ｂ）前記ｎ型シリコン単結晶基板の
他方の面に、このｎ型シリコン単結晶基板とオーミック
接続が可能な光透過性導電性膜を形成する工程と、
（ｃ）前記ｎ型シリコン単結晶基板の一方の面をアルカ
リ性水溶液に接触させて前記ｎ型シリコン単結晶基板の
異方性エッチングを行い、前記ｎ型シリコン単結晶基板
の一方の面に凹部を形成する工程と、（ｄ）前記ｎ型シ
リコン単結晶基板の一方の面をふっ酸を含む溶液に接触
させた状態で、前記ｎ型シリコン単結晶基板の他方の面
の側から光を照射しながら、前記光透過性導電性膜を陽
極として電解エッチングを行い、前記ｎ型シリコン基板
の凹部を更に深い凹部にする工程と、を有することを特
徴とする。A method for processing a silicon substrate according to claim 2 is as follows.
(A) forming a pattern mask made of an etching-resistant film on one surface of an n-type silicon single crystal substrate having a crystal orientation of (100); and (b) forming a pattern mask on the other surface of the n-type silicon single crystal substrate. Forming a light-transmitting conductive film capable of ohmic connection with the n-type silicon single crystal substrate;
(C) anisotropically etching the n-type silicon single-crystal substrate by bringing one surface of the n-type silicon single-crystal substrate into contact with an alkaline aqueous solution to form a recess on one surface of the n-type silicon single-crystal substrate; Forming; and (d) irradiating light from the other surface side of the n-type silicon single crystal substrate while one surface of the n-type silicon single crystal substrate is in contact with a solution containing hydrofluoric acid. A step of performing electrolytic etching using the light-transmitting conductive film as an anode to make the concave portion of the n-type silicon substrate a deeper concave portion.
【００１７】このように構成したので、請求項２のシリ
コン基板の加工方法は、請求項１のノズルプレートの製
造方法と同様に、シリコン基板全面にわたって電界強度
を均一にすることができるので、形成される凹部又は貫
通孔の精度が向上する。その結果、シリコン基板に微細
な凹部又は貫通孔を高精度にしかも生産性よく形成する
ことのできるという効果がある。With this configuration, the method of processing a silicon substrate according to the second aspect of the present invention can make the electric field intensity uniform over the entire surface of the silicon substrate, similarly to the method of manufacturing the nozzle plate of the first aspect. The accuracy of the recess or through hole to be formed is improved. As a result, there is an effect that fine concave portions or through holes can be formed with high accuracy and high productivity in the silicon substrate.
【００１８】また、請求項２の発明は、電解エッチング
を行うのに先立ってアルカリ性水溶液を用いて異方性エ
ッチングを行うため、凹部の部分にはエッチングピラミ
ッドが形成される。このため、光照射によって発生した
正孔がこのエッチングピラミッド先端に集中し、その結
果、電解エッチングの促進及び凹部の垂直性の改善を図
ることができるという効果もある。According to the second aspect of the present invention, since anisotropic etching is performed using an alkaline aqueous solution prior to performing electrolytic etching, an etching pyramid is formed in a concave portion. For this reason, the holes generated by the light irradiation are concentrated at the tip of the etching pyramid, and as a result, there is an effect that the electrolytic etching can be promoted and the verticality of the concave portion can be improved.
【００１９】[0019]
【発明の実施の形態】以下本発明の実施の形態につい
て、詳細に説明する。Embodiments of the present invention will be described below in detail.
【００２０】図１は、本発明におけるノズルプレートを
用いたインクジェット記録装置の斜視図である。このイ
ンクジェット記録装置は、第一プレート１とノズルプレ
ート２とが接合された構造を有している。この第１プレ
ートは、インクの供給部３と、ＰＺＴなどの振動により
インクを吐出する圧力室４と、インクが通過する流路５
と、が形成されており、このノズルプレートは、流路５
と垂直方向にノズル穴６が形成されている。インクは、
インク供給管（図示せず）からインク供給部３へ供給さ
れ、最終的にインク滴としてノズル穴６から吐出され
る。FIG. 1 is a perspective view of an ink jet recording apparatus using a nozzle plate according to the present invention. This ink jet recording apparatus has a structure in which a first plate 1 and a nozzle plate 2 are joined. The first plate includes an ink supply unit 3, a pressure chamber 4 that discharges ink by vibration of PZT or the like, and a flow path 5 through which ink passes.
Are formed, and the nozzle plate is provided with the flow path 5.
The nozzle hole 6 is formed in the vertical direction. The ink is
The ink is supplied from an ink supply pipe (not shown) to the ink supply unit 3, and is finally ejected from the nozzle hole 6 as an ink droplet.
【００２１】図２は、本発明におけるノズルプレートの
製造工程別断面図である。まず、ノズルプレートとなる
板厚２００μｍの（１００）面方位のｎ型単結晶シリコ
ン基板１１に、耐エッチング被膜として０．３μｍ厚の
窒化シリコン膜１３、１４をＣＶＤ装置で形成する（図
２（ａ））。ついで、窒化シリコン膜１４をドライエッ
チング法によって除去後、窒化シリコン膜１３にフォト
エッチングを施し、直径２０μｍのノズル穴に対応する
部分１２の窒化シリコン膜を２００ヶ所エッチングした
（図２（ｂ））。次に、窒化シリコン膜１３をマスクと
して、水酸化カリウム水溶液を用いた異方性エッチング
法によって、ｎ型単結晶シリコン基板１１へＶ溝形状の
エッチングピラミッド１５を加工し、窒化シリコン膜１
３が形成された面の裏側へインジウム・錫酸化膜（ＩＴ
Ｏ膜）１６を約０．２μｍ形成した（図２（ｃ））。続
いて、上記窒化シリコン膜１３が形成された面が電解液
に接するように電解セルを組み立て、表１の条件で窒化
シリコン膜１３が形成された面の裏側より光を照射しな
がら、２００μｍの深さのノズル穴１７を加工した（図
２（ｄ））。FIG. 2 is a cross-sectional view of the nozzle plate according to the present invention in each manufacturing process. First, 0.3 μm-thick silicon nitride films 13 and 14 having a thickness of 0.3 μm are formed as an etching-resistant film on a 200 μm-thick (100) plane n-type single crystal silicon substrate 11 serving as a nozzle plate by a CVD apparatus (FIG. a)). Next, after removing the silicon nitride film 14 by a dry etching method, the silicon nitride film 13 was subjected to photoetching, and the silicon nitride film in the portion 12 corresponding to the nozzle hole having a diameter of 20 μm was etched at 200 places (FIG. 2B). . Next, using the silicon nitride film 13 as a mask, a V-groove-shaped etching pyramid 15 is formed on the n-type single-crystal silicon substrate 11 by an anisotropic etching method using an aqueous potassium hydroxide solution.
Indium tin oxide film (IT
An O film 16 was formed to a thickness of about 0.2 μm (FIG. 2C). Subsequently, the electrolytic cell was assembled so that the surface on which the silicon nitride film 13 was formed was in contact with the electrolytic solution, and while being irradiated with light from the back side of the surface on which the silicon nitride film 13 was formed under the conditions shown in Table 1, a 200 μm The nozzle hole 17 having a depth was machined (FIG. 2D).
【００２２】[0022]
【表１】 [Table 1]
【００２３】最後に、窒化シリコン膜１３及びインジウ
ム・錫酸化膜１６を研磨法によって除去し（図２
（ｅ））、ノズルプレートの形状に切断した。Finally, the silicon nitride film 13 and the indium / tin oxide film 16 are removed by a polishing method (FIG. 2).
(E)), cut into the shape of a nozzle plate.
【００２４】比較例１として、ノズル穴の加工をドライ
エッチングによって行った。この比較例１の場合、エッ
チング速度が１時間当たり約１μｍであるため、２００
μｍ加工に２００時間を要した。得られた資料を比較試
料１とした。As Comparative Example 1, the processing of the nozzle hole was performed by dry etching. In the case of Comparative Example 1, the etching rate was about 1 μm per hour,
It took 200 hours for μm processing. The obtained data was used as Comparative Sample 1.
【００２５】また、比較例２として、シリコン基板の裏
側外周の一部部分に金属膜を０．１μｍ形成し、試料１
の陽極処理条件と同様の条件でノズル穴の加工を行っ
た。得られた試料を比較試料２とした。As Comparative Example 2, a metal film was formed to a thickness of 0.1 μm on a part of the outer periphery on the back side of the silicon substrate.
Nozzle holes were machined under the same conditions as in the anodizing process. The obtained sample was used as Comparative Sample 2.
【００２６】以上のようにして製造されたノズルプレー
トを用いて、フェースイジェクト型インクジェット記録
装置を製造した。表２は、試料１〜６及び比較試料１〜
２のノズルプレートにおいて、ノズル穴の貫通性および
ノズル穴の垂直性を評価した結果である。ノズル穴の貫
通性の「良好」は全ノズル貫通、「不良」は１ノズル以
上未貫通であり、ノズル穴断面の垂直性の「良好」は、
ノズル面と断面の成す角度が９０±１度未満、「不良」
はノズル面と断面の成す角度が９０±１度以上、「最
良」はノズル面と断面の成す角度が９０±０．５度以内
である。Using the nozzle plate manufactured as described above, a face eject type ink jet recording apparatus was manufactured. Table 2 shows samples 1 to 6 and comparative samples 1 to
2 shows the results of evaluating the penetrability of the nozzle holes and the perpendicularity of the nozzle holes in the second nozzle plate. “Good” for the nozzle hole penetration is “no good” for all nozzles, “poor” for one or more nozzles, and “good” for the perpendicularity of the nozzle hole cross-section.
The angle between the nozzle surface and the cross section is less than 90 ± 1 degree, "bad"
Indicates that the angle formed between the nozzle surface and the cross section is 90 ± 1 ° or more, and “Best” indicates that the angle formed between the nozzle surface and the cross section is within 90 ± 0.5 degrees.
【００２７】[0027]
【表２】 [Table 2]
【００２８】この表の通り、本発明の試料１から試料６
及び比較試料１のノズルプレートは、ノズル穴の貫通性
および垂直性が良好で、中でも試料２の陽極処理条件
が、ノズル穴の垂直性が最良であった。またノズルプレ
ートの製造コストでは、本発明の試料１〜試料６が、複
数の基板を同時に処理可能なため、２００時間を要した
比較試料１に比べ製造コストを低減することができた。As shown in the table, Samples 1 to 6 of the present invention were used.
The nozzle plate of Comparative Sample 1 had good penetration and verticality of the nozzle hole, and particularly, the anodizing condition of Sample 2 was the best in the verticality of the nozzle hole. In the manufacturing cost of the nozzle plate, since the samples 1 to 6 of the present invention can simultaneously process a plurality of substrates, the manufacturing cost could be reduced as compared with the comparative sample 1 which required 200 hours.
【００２９】一方、比較試料２はノズル穴の加工ばらつ
きが発生したため、インク吐出可能な２００個のノズル
穴を有するインクジェット記録装置を製造することがで
きなかった。On the other hand, since the processing variation of the nozzle holes occurred in Comparative Sample 2, an ink jet recording apparatus having 200 nozzle holes capable of discharging ink could not be manufactured.
【００３０】なお、試料１〜６は本発明の一部であり、
濃度、電圧等陽極処理条件が本試料範囲外においても、
印字特性は良好であった。さらに本実施の形態ではイン
クジェット装置のノズルプレートについて説明をした
が、シリコン基材であれば垂直性の良好な穴の加工が可
能であった。Samples 1 to 6 are part of the present invention,
Even when the anodizing conditions such as concentration and voltage are out of the range of this sample,
The printing characteristics were good. Further, in the present embodiment, the nozzle plate of the ink jet device has been described, but a hole with good perpendicularity can be formed by using a silicon base material.
【００３１】[0031]
【発明の効果】以上のように、本発明のノズルプレート
の製造方法は、高精度でばらつきの少ないノズルを有す
る高品質なノズルプレートを生産性よく低価格で提供す
ることができる。また、本発明のシリコン基板の製造方
法は、シリコン基板に微細な凹部又は貫通孔を高精度に
しかも生産性よく形成することができる。As described above, the method of manufacturing a nozzle plate according to the present invention can provide a high-quality nozzle plate having nozzles with high precision and little variation at high productivity and at a low price. Further, according to the method for manufacturing a silicon substrate of the present invention, fine concave portions or through holes can be formed on a silicon substrate with high accuracy and high productivity.
【図１】 本発明におけるインクジェット記録装置の斜
視図。FIG. 1 is a perspective view of an ink jet recording apparatus according to the present invention.
【図２】 本発明におけるノズルプレートの製造工程別
断面図。FIG. 2 is a cross-sectional view of the nozzle plate according to the present invention in each manufacturing process.
１ 第一プレート ２ ノズルプレート ３ 供給部 ４ 圧力室 ５ 流路 ６ ノズル穴 １１ ｎ型単結晶シリコン基板 １２ ノズル穴に対応する部分 １３ 窒化シリコン膜 １４ 窒化シリコン膜 １５ エッチングピラミッド １６ インジウム・錫酸化物 １７ ノズル穴 DESCRIPTION OF SYMBOLS 1 1st plate 2 nozzle plate 3 supply part 4 pressure chamber 5 flow path 6 nozzle hole 11 n-type single crystal silicon substrate 12 part corresponding to a nozzle hole 13 silicon nitride film 14 silicon nitride film 15 etching pyramid 16 indium tin oxide 17 Nozzle hole
Claims (2)
結晶方位（１００）のｎ型シリコン単結晶基板の一方の
面に、ノズルパターンに対応した耐エッチングマスクを
形成する工程と、 （ｂ）前記ｎ型シリコン単結晶基板の他方の面に、この
ｎ型シリコン単結晶基板とオーミック接続が可能な光透
過性導電性膜を形成する工程と、 （ｃ）前記ｎ型シリコン単結晶基板の一方の面をアルカ
リ性水溶液に接触させて前記ｎ型シリコン単結晶基板の
異方性エッチングを行い、前記ｎ型シリコン単結晶基板
の一方の面にノズルパターンに対応した未貫通孔を形成
する工程と、 （ｄ）前記ｎ型シリコン単結晶基板の一方の面をふっ酸
を含む溶液に接触させた状態で、前記ｎ型シリコン単結
晶基板の他方の面の側から光を照射しながら、前記光透
過性導電性膜を陽極として電解エッチングを行い、前記
ｎ型シリコン基板の未貫通孔を更に深い未貫通孔又は貫
通孔にする工程と、を有することを特徴とするノズルプ
レートの製造方法。(A) forming an etching-resistant mask corresponding to a nozzle pattern on one surface of an n-type silicon single crystal substrate having a crystal orientation of (100) used as a nozzle plate substrate; forming a light-transmitting conductive film capable of ohmic connection with the n-type silicon single crystal substrate on the other surface of the n-type silicon single crystal substrate; and (c) one of the n-type silicon single crystal substrates. Contacting the surface with an alkaline aqueous solution to perform anisotropic etching of the n-type silicon single crystal substrate to form a non-through hole corresponding to a nozzle pattern on one surface of the n-type silicon single crystal substrate; d) While irradiating light from the other surface of the n-type silicon single crystal substrate with one surface of the n-type silicon single crystal substrate in contact with a solution containing hydrofluoric acid, Guidance Sex film subjected to electrolytic etching as an anode, the manufacturing method of the nozzle plate, characterized in that and a step of the deeper blind holes or through-holes of the non-through hole of the n-type silicon substrate.
単結晶基板の一方の面に、耐エッチング膜からなるパタ
ーンマスクを形成する工程と、 （ｂ）前記ｎ型シリコン単結晶基板の他方の面に、この
ｎ型シリコン単結晶基板とオーミック接続が可能な光透
過性導電性膜を形成する工程と、 （ｃ）前記ｎ型シリコン単結晶基板の一方の面をアルカ
リ性水溶液に接触させて前記ｎ型シリコン単結晶基板の
異方性エッチングを行い、前記ｎ型シリコン単結晶基板
の一方の面に凹部を形成する工程と、 （ｄ）前記ｎ型シリコン単結晶基板の一方の面をふっ酸
を含む溶液に接触させた状態で、前記ｎ型シリコン単結
晶基板の他方の面の側から光を照射しながら、前記光透
過性導電性膜を陽極として電解エッチングを行い、前記
ｎ型シリコン基板の凹部を更に深い凹部又は貫通孔にす
る工程と、を有することを特徴とするシリコン基板の加
工方法。2. A step of (a) forming a pattern mask made of an etching resistant film on one surface of an n-type silicon single crystal substrate having a crystal orientation of (100); and (b) forming a pattern mask of the n-type silicon single crystal substrate. Forming a light-transmitting conductive film capable of ohmic connection with the n-type silicon single crystal substrate on the other surface; and (c) bringing one surface of the n-type silicon single crystal substrate into contact with an alkaline aqueous solution. Performing anisotropic etching of the n-type silicon single crystal substrate to form a concave portion on one surface of the n-type silicon single crystal substrate, and (d) removing one surface of the n-type silicon single crystal substrate. While in contact with a solution containing hydrofluoric acid, while irradiating light from the other surface side of the n-type silicon single crystal substrate, electrolytic etching is performed using the light-transmitting conductive film as an anode, and the n-type Silicon substrate recess Method for processing a silicon substrate, characterized in that and a step of the deeper recesses or through-holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7102898A JP3570209B2 (en) | 1998-03-19 | 1998-03-19 | Nozzle plate manufacturing method and silicon substrate processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7102898A JP3570209B2 (en) | 1998-03-19 | 1998-03-19 | Nozzle plate manufacturing method and silicon substrate processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11268281A true JPH11268281A (en) | 1999-10-05 |
| JP3570209B2 JP3570209B2 (en) | 2004-09-29 |
Family
ID=13448673
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7102898A Expired - Fee Related JP3570209B2 (en) | 1998-03-19 | 1998-03-19 | Nozzle plate manufacturing method and silicon substrate processing method |
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| Country | Link |
|---|---|
| JP (1) | JP3570209B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086591A (en) * | 2001-09-12 | 2003-03-20 | Fujikura Ltd | Method for manufacturing through electrode and the electrode |
| US7718254B2 (en) | 2004-11-09 | 2010-05-18 | Sharp Kabushiki Kaisha | Method of forming pores in crystal substrate, and crystal substrate containing pores formed by the same |
| EP2439766A1 (en) | 2010-10-08 | 2012-04-11 | Wakom Semiconductor Corporation | Method of forming micro-pore structures or trench structures on surface of silicon wafer substrate |
| KR101972665B1 (en) * | 2017-10-31 | 2019-04-25 | 인하대학교 산학협력단 | Metal foil hole processing method using electrolytic processing |
-
1998
- 1998-03-19 JP JP7102898A patent/JP3570209B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086591A (en) * | 2001-09-12 | 2003-03-20 | Fujikura Ltd | Method for manufacturing through electrode and the electrode |
| JP4717290B2 (en) * | 2001-09-12 | 2011-07-06 | 株式会社フジクラ | Manufacturing method of through electrode |
| US7718254B2 (en) | 2004-11-09 | 2010-05-18 | Sharp Kabushiki Kaisha | Method of forming pores in crystal substrate, and crystal substrate containing pores formed by the same |
| EP2439766A1 (en) | 2010-10-08 | 2012-04-11 | Wakom Semiconductor Corporation | Method of forming micro-pore structures or trench structures on surface of silicon wafer substrate |
| KR101972665B1 (en) * | 2017-10-31 | 2019-04-25 | 인하대학교 산학협력단 | Metal foil hole processing method using electrolytic processing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3570209B2 (en) | 2004-09-29 |
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