JPH1126414A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove contamination between conductors or on a sidewall of a wiring, and prevent the re-attachment of the contamination in a cleaning step, after the wiring is formed on a semiconductor substrate. SOLUTION: A wafer is fixed in a chamber 7, pure water is fed from the upper side and sucked forcibly from the surrounding parts of the wafer, while the wafer is not rotate. After that, isopropyl alcohol is dropped and dried under reduced pressure. The pure water is fed from a nozzle 8 above the wafer, while holes 9 for sucking the pure water are provided around a stage 12 that fixes the wafer. The wafer is cleaned using a given quantity of the pure water in accordance with the suction force. After a cleaning step for a fixed time, the isopropyl alcohol of 3 to 5 cc is dropped through a nozzle 10. The pure water on the wafer is pushed to the outer boundary part of the wafer through the force caused by a difference of surface tension between the pure water and the alcohol, and thereby the inside of the chamber 7 is put under a reduced pressure. Then the face of the wafer is dried under reduced pressure and a drying step is finished in a given time.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体基板配線形
成後の半導体装置の製造工程における異物除去を目的と
する洗浄方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method for removing foreign substances in a semiconductor device manufacturing process after a semiconductor substrate wiring is formed.

【０００２】[0002]

【従来の技術】配線加工後のウエハには、側壁保護膜の
残渣や装置からの異物等が付着している。図１は、上述
した異物除去を行う際の処理装置を示す構成図である。2. Description of the Related Art Residues of side wall protective films and foreign substances from equipment adhere to a wafer after wiring processing. FIG. 1 is a configuration diagram showing a processing apparatus for performing the above-described foreign matter removal.

【０００３】一定排気のチャンバー内１で、モーター６
によりウエハ２を回転させながらウエハ上部のノズル３
から純水を供給し異物を除去する。また、純水供給と同
時にブラシ４の回転や純水への超音波５を付加する事に
より、純水だけでは除去しきれない異物を物理的な力で
除去する方法が選択されてきた。ブラシや超音波のよう
な物理的な力を利用する事で、配線上部や配線側壁に付
着した異物は除去され、ウエハの高速回転により最終の
乾燥を行い異物除去が終了する。[0003] In a constant exhaust chamber 1, a motor 6
The nozzle 3 above the wafer is rotated while rotating the wafer 2
To supply foreign water to remove foreign matter. In addition, a method has been selected in which a foreign substance that cannot be completely removed by pure water alone is removed by physical force by rotating the brush 4 and adding ultrasonic waves 5 to the pure water simultaneously with the supply of pure water. By using a physical force such as a brush or an ultrasonic wave, the foreign matter adhering to the upper part of the wiring and the wiring side wall is removed, and the wafer is finally dried by high-speed rotation to complete the foreign matter removal.

【０００４】[0004]

【発明が解決しようとする課題】上述したように、従来
の半導体基板の配線形成工程において、配線加工時に発
生する側壁保護膜の残渣は、浸漬方式による薬液の化学
的除去では、配線材料及び配線直下の材料をエッチング
するため濃度や温度の制御が困難になってきている。ま
た、浸漬時に異物がウエハへ再付着するため異物除去効
果が低下する。スクラバーのような純水のみによる異物
除去方法においては、ウエハの回転により、供給された
純水が配線間及び配線側壁に充分に入り込めず、配線間
及び側壁部の異物が充分除去できない。ブラシの回転
や、純水への超音波付加による物理的な力を利用した異
物除去方法では、配線材料の欠損や損傷が発生する。ま
た、ブラシの消耗や回転装置の劣化による異物の再付着
があり配線の信頼性劣化を招くという問題点を有してい
た。As described above, in the conventional wiring formation process for semiconductor substrates, the residue of the sidewall protective film generated at the time of wiring processing is reduced by the removal of the wiring material and wiring by chemical removal of a chemical solution by an immersion method. Since the material immediately below is etched, it is becoming difficult to control the concentration and temperature. In addition, the foreign matter reattaches to the wafer during immersion, so that the foreign matter removing effect is reduced. In the foreign matter removing method using only pure water such as a scrubber, the supplied pure water cannot sufficiently enter between the wirings and the side walls of the wiring due to the rotation of the wafer, and the foreign matter between the wirings and the side wall cannot be sufficiently removed. In the foreign matter removing method using the physical force of the rotation of the brush or the application of the ultrasonic wave to the pure water, the wiring material is damaged or damaged. In addition, there is a problem that foreign matter is reattached due to wear of the brush or deterioration of the rotating device, which causes deterioration in reliability of wiring.

【０００５】[0005]

【課題を解決するための手段】本発明は、半導体基板の
配線形成後の異物除去する半導体装置の製造方法におい
て、密閉されたチャンバ７内にウエハ１２を固定し、ウ
エハを回転させずにウエハ上部から供給された純水８を
ウエハ外周から強制的に純水を吸引９する。純水供給
後、イソプロピルアルコール１０を滴下し、水分をアル
コールで置換後減圧下で乾燥を終了する。物理的な除去
装置を使用しないため、配線材料の欠損、損傷及び、ウ
エハへの異物再付着が無い異物除去を特徴とする半導体
装置の製造方法である。According to the present invention, there is provided a method of manufacturing a semiconductor device for removing foreign matter after wiring of a semiconductor substrate is formed, wherein a wafer is fixed in a sealed chamber and the wafer is rotated without rotating the wafer. Pure water 8 supplied from above is forcibly sucked 9 from the outer periphery of the wafer. After the supply of pure water, isopropyl alcohol 10 is added dropwise, the water is replaced with alcohol, and the drying is completed under reduced pressure. This is a method for manufacturing a semiconductor device, characterized by using a physical removal device, and removing foreign matter without causing loss or damage of the wiring material and reattachment of foreign matter to the wafer.

【０００６】[0006]

【作用】本発明は、配線形成後の異物除去において、ウ
エハ上に供給された純水を、ウエハを回転させずにウエ
ハ外周からの強制吸引により移動させるため、配線間及
び配線側壁に純水が入り込み、配線間及び側壁部の異物
が純水の移動エネルギーを充分に受けることが可能とな
る。すなわち、配線間に存在する異物に対して従来の上
方向からの物理的な作用と違い、横方向の力が発生する
ため異物に作用する力は大きくなり除去効果の向上が図
られる。また、ブラシによる回転や、超音波を使用しな
いため配線材料の欠損及び損傷はなく、異物の再付着も
発生しない。純水供給後、イソプロピルアルコールを滴
下し、水分をアルコールで置換後減圧下で乾燥する。し
たがって、ウエハ表面の異物を効率よく除去することが
できる。According to the present invention, pure water supplied onto a wafer is moved by forced suction from the outer periphery of the wafer without rotating the wafer in removing foreign matter after forming the wiring. And foreign matter between the wirings and on the side wall can sufficiently receive the transfer energy of pure water. That is, unlike the conventional physical action from above in the foreign matter existing between the wirings, a lateral force is generated, so that the force acting on the foreign matter is increased and the removal effect is improved. Further, since rotation by a brush and ultrasonic waves are not used, there is no loss or damage to the wiring material, and no reattachment of foreign matter occurs. After supplying pure water, isopropyl alcohol is added dropwise, the water is replaced with alcohol, and then dried under reduced pressure. Therefore, foreign substances on the wafer surface can be efficiently removed.

【０００７】[0007]

【発明の実施の形態】以下、図面を参照してこの発明を
説明する。図２は、この発明の実施例による異物除去装
置を示す構成図である。ウエハ上部のノズル８から純水
を供給し、ウエハを固定するステージ１２の外周部には
純水を吸引する孔が四方に設けられている。純水の吸引
能力に合わせた純水供給量でウエハ洗浄を行い異物除去
を行う。一定時間の洗浄を終えた後、ノズル１０よりイ
ソプロピルアルコールを３〜５ｃｃ滴下する。純水とア
ルコールの表面張力の違いからウエハ上の純水はウエハ
外周方向へ押し出されその間、チャンバ内は減圧状態と
なるためウエハ表面は減圧乾燥に移行され一定時間の乾
燥後処理を終了する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 2 is a configuration diagram showing a foreign matter removing device according to an embodiment of the present invention. Pure water is supplied from a nozzle 8 above the wafer, and holes for sucking the pure water are provided on all sides of a stage 12 for fixing the wafer. Wafer cleaning is performed with a pure water supply amount corresponding to the pure water suction capacity to remove foreign matter. After the cleaning for a certain period of time, 3 to 5 cc of isopropyl alcohol is dropped from the nozzle 10. Due to the difference in surface tension between pure water and alcohol, pure water on the wafer is extruded in the outer peripheral direction of the wafer, and during that time, the inside of the chamber is depressurized.

【０００８】[0008]

【発明の効果】本発明により、半導体基板配線形成後の
異物除去において、配線材料へのダメージ低減と、異物
の再付着を防止する事が可能となる。According to the present invention, it is possible to reduce the damage to the wiring material and to prevent the foreign substances from re-adhering in removing foreign substances after forming the semiconductor substrate wiring.

【図面の簡単な説明】[Brief description of the drawings]

【図１】従来の異物除去装置の構成図である。FIG. 1 is a configuration diagram of a conventional foreign matter removing device.

【図２】本発明の異物除去装置の実施例を示す構成図で
ある。FIG. 2 is a configuration diagram showing an embodiment of a foreign matter removing device of the present invention.

【符号の説明】[Explanation of symbols]

１．処理チャンバー ２．ウエハ ３．純水供給ライン ４．回転ブラシ ５．超音波純水供給ライン ６．回転モーター ７．処理チャンバー ８．純水供給ライン ９．純水吸引孔 １０．イソプロピルアルコール供給ライン １１．強制吸引ライン １２．ウエハ 1. Processing chamber 2. Wafer 3. Pure water supply line 4. Rotating brush 5. Ultrasonic pure water supply line 6. Rotating motor 7. Processing chamber 8. Pure water supply line 9. Pure water suction hole 10. Isopropyl alcohol supply line 11. Forced suction line 12. Wafer

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】半導体基板配線形成後の異物除去工程にお
いて、配線材料へのダメージの低減と、異物の再付着を
防止することを特徴とする半導体装置の製造方法。1. A method of manufacturing a semiconductor device, comprising: in a foreign matter removing step after forming a semiconductor substrate wiring, reducing damage to a wiring material and preventing reattachment of foreign matter.