JPH11261308A - Inter-triplet line layer connector - Google Patents
Inter-triplet line layer connectorInfo
- Publication number
- JPH11261308A JPH11261308A JP10061838A JP6183898A JPH11261308A JP H11261308 A JPH11261308 A JP H11261308A JP 10061838 A JP10061838 A JP 10061838A JP 6183898 A JP6183898 A JP 6183898A JP H11261308 A JPH11261308 A JP H11261308A
- Authority
- JP
- Japan
- Prior art keywords
- line
- dielectric
- patch pattern
- power supply
- shield spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Waveguide Connection Structure (AREA)
- Waveguides (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ミリ波帯における
トリプレート線路の層間接続構造に関する。The present invention relates to an interlayer connection structure of a triplate line in a millimeter wave band.
【０００２】[0002]
【従来の技術】従来のトリプレート線路の層間接続構造
は、図６に示すように、第１の地導体１と第２の地導体
２の略中間に、第１の誘電体４ａ及び第２の誘電体４ｂ
に挟んだ第１の給電線路５を形成した第１の給電基板６
を配置した第１のトリプレート線路と、第２の地導体２
と第３の地導体３の略中間に、第３の誘電体７ａ及び第
４の誘電体７ｂに挟んだ第２の給電線路８を形成した第
２の給電基板９を配置した第２のトリプレート線路と
を、前記第２の地導体２に形成された第２のスロット１
４を介して電磁結合している。2. Description of the Related Art As shown in FIG. 6, a conventional interlayer connection structure of a triplate line has a first dielectric 4a and a second dielectric 4a substantially in the middle of a first ground conductor 1 and a second ground conductor 2. Dielectric 4b
First power supply substrate 6 having first power supply line 5 sandwiched between
And a second ground conductor 2
And a second power supply board 9 having a second power supply line 8 sandwiched between a third dielectric 7a and a fourth dielectric 7b, and a second power supply board 9 disposed substantially in the middle of the third ground conductor 3 and the third ground conductor 3. A second slot 1 formed in the second ground conductor 2 with a plate line;
4 via electromagnetic coupling.
【０００３】通常、第１の誘電体４ａ、第２の誘電体４
ｂ、第３の誘電体７ａ、及び第４の誘電体７ｂには、給
電線路の損失を抑えるため、比誘電率ε1≒１の低誘電
率材料が用いられる。また、第１の地導体１と第２の地
導体２の間隔、及び第２の地導体２と第３の地導体３の
間隔は、使用する周波数において線路に高次モードが発
生することを避けるため、使用する周波数の線路実効波
長（線路実効波長＝自由空間波長／誘電体の比誘電率の
平方根）の略５分の１以下に設定される。Usually, a first dielectric 4a, a second dielectric 4
For b, the third dielectric 7a, and the fourth dielectric 7b, a low dielectric constant material having a relative dielectric constant of ε 1 ≒ 1 is used in order to suppress the loss of the feed line. Further, the distance between the first ground conductor 1 and the second ground conductor 2 and the distance between the second ground conductor 2 and the third ground conductor 3 are such that a higher-order mode is generated in the line at the used frequency. In order to avoid this, it is set to be approximately one-fifth or less of the effective line wavelength (effective line wavelength = free space wavelength / square root of the dielectric constant of the dielectric) of the frequency to be used.
【０００４】また、第１の給電線路５と第２の給電線路
８とを、第２のスロット１４を介して良好に電磁結合さ
せるためには、第２のスロット１４を使用する周波数で
共振させる必要があるため、図７に示すように、第２の
スロット１４の共振器長Ｌ８を使用する周波数の線路実
効波長の略２分の１に設定すると共に、第１の給電線路
５の接続終端部と、前記第２の給電線路８の接続終端部
から、使用する周波数の線路実効波長の略４分の１とな
る線路長Ｌ７の位置に、第２のスロット１４が位置する
ように配置する必要がある。また、第２のスロット１４
の幅は、おおむね使用する周波数の線路実効波長の略１
０分の１程度とされている。In order to make the first power supply line 5 and the second power supply line 8 to be electromagnetically coupled to each other through the second slot 14, the first power supply line 5 and the second power supply line 8 are resonated at a frequency at which the second slot 14 is used. Therefore, as shown in FIG. 7, the resonator length L8 of the second slot 14 is set to approximately one half of the line effective wavelength of the frequency to be used, and the connection termination of the first feed line 5 is set. And the second slot 14 is arranged at a position of a line length L7 that is approximately one-fourth of the effective line wavelength of the frequency to be used from the connection end of the second power supply line 8 to the second slot 14. There is a need. Also, the second slot 14
Is approximately 1 times the effective line wavelength of the frequency used.
It is about 1/0.
【０００５】このように、第２のスロット１４の共振器
長Ｌ８を使用する周波数の線路実効波長の略２分の１に
設定することにより、第２のスロット１４が使用する周
波数で共振し、かつ、第１の給電線路５及び第２の給電
線路８の接続終端部からの第２のスロット１４の設定位
置Ｌ７を、使用する周波数の線路実効波長の略４分の１
に設定することにより、給電線路から第２のスロット１
４を見込んだインピーダンス整合が確保されて電力が反
射することなく伝送される。As described above, by setting the resonator length L8 of the second slot 14 to approximately one half of the effective line wavelength of the used frequency, resonance occurs at the frequency used by the second slot 14, In addition, the setting position L7 of the second slot 14 from the connection end portion of the first power supply line 5 and the second power supply line 8 is set to approximately one quarter of the line effective wavelength of the frequency to be used.
To the second slot 1 from the feed line.
4 is ensured, and power is transmitted without reflection.
【０００６】[0006]
【発明が解決しようとする課題】しかし、図６に示す、
従来のトリプレート線路の層間接続構造では、第２のス
ロット１４の共振器長Ｌ８の長さの誤差に対する周波数
変化が大きく、かつ、第１の給電線路５及び第２の給電
線路８の接続終端部からの第２のスロット１４の設定位
置Ｌ７の誤差に対する給電線路から第２のスロット１４
を見込んだインピーダンスの変化が大きいので、周波数
特性が狭帯域となるという課題があった。However, as shown in FIG.
In the conventional interlayer connection structure of the triplate line, the frequency change with respect to the error of the length L8 of the resonator of the second slot 14 is large, and the connection termination of the first feed line 5 and the second feed line 8 is performed. From the feed line to the error of the set position L7 of the second slot 14 from the
However, there is a problem that the frequency characteristic becomes narrower because the impedance changes in anticipation of the impedance change is large.
【０００７】また、第１の給電線路５及び第２の給電線
路８と第２のスロット１４の電磁結合に伴い、第１の地
導体１と第２の地導体２の間、及び第３の地導体３と第
２の地導体２の間を横方向へ伝搬するパラレルプレート
成分が発生し、損失が増加するという課題があった。[0007] With the electromagnetic coupling between the first feed line 5 and the second feed line 8 and the second slot 14, between the first ground conductor 1 and the second ground conductor 2, and There is a problem that a parallel plate component that propagates between the ground conductor 3 and the second ground conductor 2 in the lateral direction is generated, and the loss increases.
【０００８】更に、例えば使用する周波数が７６．５Ｇ
Ｈｚ帯のように、極めて高い周波数帯で、従来のトリプ
レート線路層間接続構造を実現しようとする場合、図７
に示した第２のスロット１４の共振器長Ｌ８は、略２ｍ
ｍ程度で、幅は０．４ｍｍ程度以下と極めて微細な寸法
になるため、第２のスロット１４は、機械プレス加工等
で形成することが難しくなると共に、組立時に、第１の
給電線路５及び第２の給電線路８の接続終端部からの第
２のスロット１４の設定位置Ｌ７を、略１ｍｍ程度に高
精度で設定する必要がある等、精度の高い加工方法や組
立構造の選択が不可欠であり、コストが高くなるという
課題があった。Further, for example, when the frequency used is 76.5 G
In order to realize a conventional triplate line interlayer connection structure in an extremely high frequency band such as the Hz band, FIG.
The resonator length L8 of the second slot 14 shown in FIG.
m, the width is extremely small, about 0.4 mm or less. Therefore, it is difficult to form the second slot 14 by mechanical pressing or the like, and the first feed line 5 and the The setting position L7 of the second slot 14 from the connection terminating end of the second power supply line 8 needs to be set with high accuracy to about 1 mm, and selection of a high-precision processing method and assembly structure is indispensable. There was a problem that the cost was high.
【０００９】本発明は、損失の抑制に優れ、かつ、組立
の容易なトリプレート線路層間接続器を提供することを
目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a triplate line interlayer connector which is excellent in suppressing loss and easy to assemble.
【００１０】[0010]
【課題を解決するための手段】本発明のトリプレート線
路層間接続器は、図１に示すように、第１の地導体１と
第２の地導体２の略中間に、第１の誘電体４ａ及び第２
の誘電体４ｂに挟んだ、第１の給電線路５を形成した第
１の給電基板６を配置した第１のトリプレート線路と、
第２の地導体２と第３の地導体３の略中間に、第３の誘
電体７ａ及び第４の誘電体７ｂに挟んだ、第２の給電線
路８を形成した第２の給電基板９を配置した第２のトリ
プレート線路との電気的接続器であって、前記第１の給
電基板６の第１の給電線路５の接続終端部と、前記第２
の給電基板９の第２の給電線路８の接続終端部とに、そ
れぞれ第１のパッチパターン１２ａ、第２のパッチパタ
ーン１２ｂを形成し、その第１のパッチパターン１２ａ
の周辺部の第１の誘電体４ａ及び第２の誘電体４ｂを削
除すると共に、その削除した箇所に第１のパッチパター
ン１２ａとそれに接続した第１の給電線路５の形状より
も大きめのくりぬき部を有する第１のシールドスペーサ
１０ａ及び第２のシールドスペーサ１０ｂを設け、か
つ、前記第２のパッチパターン１２ｂの周辺部の第３の
誘電体７ａ及び第４の誘電体７ｂを削除すると共に、そ
の削除した箇所に第２のパッチパターン１２ｂとそれに
接続した第２の給電線路８の形状よりも大きめのくりぬ
き部を有する第３のシールドスペーサ１１ａ及び第４の
シールドスペーサ１１ｂを設け、さらに前記第１のパッ
チパターン１２ａ及び第２のパッチパターン１２ｂの中
間に位置する部分の前記第２の地導体２に、第１のスロ
ット１３を形成したことを特徴とする。As shown in FIG. 1, a triplate line interlayer connector according to the present invention comprises a first dielectric 1 4a and 2nd
A first triplate line, on which a first power supply substrate 6 having a first power supply line 5 formed therebetween is interposed between dielectrics 4b of
A second power supply substrate 9 having a second power supply line 8 sandwiched between a third dielectric 7a and a fourth dielectric 7b substantially in the middle of the second ground conductor 2 and the third ground conductor 3. An electrical connection with a second triplate line in which a connection termination portion of the first power supply line 5 of the first power supply board 6 is provided.
A first patch pattern 12a and a second patch pattern 12b are respectively formed at the connection end of the second power supply line 8 of the power supply substrate 9 of the first power supply board 9 and the first patch pattern 12a.
Of the first dielectric 4a and the second dielectric 4b at the peripheral portion of the first patch pattern 12a and a hollow portion larger than the shape of the first patch pattern 12a and the first feeder line 5 connected to the first dielectric pattern 4a. A first shield spacer 10a and a second shield spacer 10b having a portion are provided, and the third and fourth dielectrics 7a and 7b around the second patch pattern 12b are deleted. A third shield spacer 11a and a fourth shield spacer 11b each having a hollow portion larger than the shape of the second patch pattern 12b and the second power supply line 8 connected to the second patch pattern 12b are provided at the removed portion. A first slot 13 is formed in a portion of the second ground conductor 2 located in the middle between the first patch pattern 12a and the second patch pattern 12b. And wherein the door.
【００１１】また、本発明のトリプレート線路層間接続
器は、図２に示すように、第１のパッチパターン１２ａ
及び第２のパッチパターン１２ｂの、線路接続方向の長
さＬ１を使用する周波数の自由空間波長λ0の略０．３
８倍とし、かつ第１のシールドスペーサ１０ａ、第２の
シールドスペーサ１０ｂ、第３のシールドスペーサ１１
ａ、及び第４のシールドスペーサ１１ｂのくりぬき部の
パッチ周辺部の線路接続方向における寸法Ｌ２及び第１
のスロット１３の線路接続方向における寸法Ｌ３を使用
する周波数の自由空間波長λ0の略０．６倍とすること
ができる。As shown in FIG. 2, the triplate line interlayer connector according to the present invention has a first patch pattern 12a.
And approximately 0.3 of the free space wavelength λ 0 of the frequency using the length L1 of the second patch pattern 12b in the line connection direction.
8 times, and the first shield spacer 10a, the second shield spacer 10b, and the third shield spacer 11
a and the dimension L2 and the first dimension L2 in the line connection direction around the patch of the hollow portion of the fourth shield spacer 11b.
The dimension L3 of the slot 13 in the line connection direction can be set to approximately 0.6 times the free space wavelength λ 0 of the frequency to be used.
【００１２】さらに、本発明のトリプレート線路層間接
続器は、図３に示すように、第１のパッチパターン１２
ａ及び第２のパッチパターン１２ｂの形状を円形とし、
その直径Ｌ４を、使用する周波数の自由空間波長λ0の
略０．３８倍とし、かつ第１のシールドスペーサ１０
ａ、第２のシールドスペーサ１０ｂ、第３のシールドス
ペーサ１１ａ、及び第４のシールドスペーサ１１ｂのく
りぬき部のパッチ周辺部の形状を円形としその直径Ｌ５
を使用する周波数の自由空間波長λ0の略０．６倍と
し、かつ、第１のスロット１３の形状を円形としその直
径Ｌ６を使用する周波数の自由空間波長λ0の略０．６
倍とすることもできる。Further, the triplate line interlayer connector of the present invention, as shown in FIG.
a and the shape of the second patch pattern 12b are circular,
The diameter L4 is set to approximately 0.38 times the free space wavelength λ 0 of the frequency to be used, and the first shield spacer 10
a, the shape of the periphery of the patch at the hollow portion of the second shield spacer 10b, the third shield spacer 11a, and the fourth shield spacer 11b is circular, and the diameter L5
Is approximately 0.6 times the free space wavelength λ 0 of the frequency used, and the shape of the first slot 13 is circular, and approximately 0.6 of the free space wavelength λ 0 of the frequency using the diameter L6 is used.
It can be doubled.
【００１３】（作用）本発明のトリプレート線路層間接
続器において、図１に示す、第１のパッチパターン１２
ａ及び第２のパッチパターン１２ｂは、使用する周波数
で相互に電磁結合して１つの共振器を構成する。そし
て、第１のパッチパターン１２ａ及び第２のパッチパタ
ーン１２ｂは、従来構造の共振器と比較して非常に広帯
域な特性を確保することができる。(Operation) In the triplate line interlayer connector according to the present invention, the first patch pattern 12 shown in FIG.
a and the second patch pattern 12b are electromagnetically coupled to each other at a frequency to be used to form one resonator. The first patch pattern 12a and the second patch pattern 12b can secure a very wide band characteristic as compared with a resonator having a conventional structure.
【００１４】第１のスロット１３は、このパッチ相互の
電磁結合を妨げることなく、電力が第１の給電線路５か
ら第２の給電線路８に伝送されるための窓として機能
し、従来構造のスロットのように共振するものではない
ので、第１のスロット１３の線路接続方向における共振
器長Ｌ３の長さの誤差に対する周波数変化は小さく、前
記のパッチパターンによる共振器の広帯域な特性と相ま
って、周波数特性の安定したトリプレート線路層間接続
器が構成できる。The first slot 13 functions as a window for transmitting power from the first feeder line 5 to the second feeder line 8 without hindering the electromagnetic coupling between the patches. Since it does not resonate like a slot, the frequency change with respect to the error of the length of the resonator L3 in the line connection direction of the first slot 13 is small, and in combination with the wide-band characteristics of the resonator due to the patch pattern, A triplate line interlayer connector having stable frequency characteristics can be configured.
【００１５】第１のシールドスペーサ１０ａ、第２のシ
ールドスペーサ１０ｂ、第３のシールドスペーサ１１ａ
及び第４のシールドスペーサ１１ｂは、第１のパッチパ
ターン１２ａ及び第２のパッチパターン１２ｂの周囲
に、距離を隔てて金属壁を形成するもので、パラレルプ
レート成分が発生することなく、第１のパッチパターン
１２ａの電力が全て第２のパッチパターン１２ｂに伝送
され、低損失特性が実現できる。First shield spacer 10a, second shield spacer 10b, third shield spacer 11a
The fourth shield spacer 11b forms a metal wall around the first patch pattern 12a and the second patch pattern 12b at a distance, and the first shield spacer 11b does not generate a parallel plate component. All the power of the patch pattern 12a is transmitted to the second patch pattern 12b, and low loss characteristics can be realized.
【００１６】また、第１のシールドスペーサ１０ａ、、
第２のシールドスペーサ１０ｂ、第３のシールドスペー
サ１１ａ及び第４のシールドスペーサ１１ｂは、第１の
給電基板６及び第２の給電基板９を、それぞれ第１の地
導体１と第２の地導体２及び第２の地導体２と第３の地
導体３の略中間に安定に保持するスペーサとして機能
し、第１のパッチパターン１２ａ及び第２のパッチパタ
ーン１２ｂ相互の距離を安定に維持することでパッチ相
互の電磁結合を常に安定に保つことができる。Also, the first shield spacers 10a,.
The second shield spacer 10b, the third shield spacer 11a, and the fourth shield spacer 11b connect the first power supply substrate 6 and the second power supply substrate 9 to the first ground conductor 1 and the second ground conductor, respectively. The first and second patch patterns 12a and 12b function as spacers for stably holding them substantially at the middle between the second and third ground conductors 2 and 3, and maintain a stable distance between the first patch pattern 12a and the second patch pattern 12b. Thus, the electromagnetic coupling between the patches can always be kept stable.
【００１７】第１のパッチパターン１２ａ、第２のパッ
チパターン１２ｂ及び第１のスロット１３の形状は、図
２に示すように正方形であるのが一般的であるが、幅方
向の寸法は、共振周波数に対する影響が小さいため、必
要に応じて長方形であっても良く、また、図３に示すよ
うに円形であっても同様に作用する。また、例えば第１
のパッチパターン１２ａと第１の給電線路５の接続部
は、第１のパッチパターン１２ａの端部のインピーダン
スと第１の給電線路５のインピーダンスを整合させるた
めに、図４（ａ）に示すように、使用する周波数の線路
実効波長の略４分の１の線路長のトランス線路１０１で
接続するのが一般的であるが、図４（ｂ）に示すよう
に、パッチ内部の整合点１０２で直接整合させる給電
や、図４（ｃ）に示すように、僅かなギャップ１０３を
介して容量結合させることもできる。The first patch pattern 12a, the second patch pattern 12b, and the first slot 13 generally have a square shape as shown in FIG. Since the influence on the frequency is small, a rectangular shape may be used if necessary, and a circular shape as shown in FIG. Also, for example, the first
FIG. 4A shows the connection between the patch pattern 12a and the first feed line 5 in order to match the impedance of the end of the first patch pattern 12a with the impedance of the first feed line 5. In general, connection is made with a transformer line 101 having a line length approximately one-fourth the line effective wavelength of the frequency to be used. However, as shown in FIG. Power supply for direct matching or capacitive coupling via a small gap 103 as shown in FIG.
【００１８】[0018]
【実施例】実施例１ 第１の地導体１及び第３の地導体３には、厚さ１ｍｍの
アルミ板を用い、第１の誘電体４ａ、第２の誘電体４
ｂ、第３の誘電体７ａ、及び第４の誘電体７ｂには、厚
さ０．３ｍｍで比誘電率約１．１の発泡ポリエチレンフ
ォームを用い、第１の給電基板６には、ポリイミドフィ
ルムに銅箔を貼り合わせたフレキシブル基板を用い、不
要な銅箔をエッチングで除去して、第１の給電線路５と
第１のパッチパターン１２ａを形成したものを用い、第
２の給電基板９にも第１の給電基板と同じ、ポリイミド
フィルムに銅箔を貼り合わせたフレキシブル基板を用
い、不要な銅箔をエッチングで除去して、第２の給電線
路８と第２のパッチパターン１２ｂを形成したものを用
い、第２の地導体２には、厚さ０．７ｍｍのアルミ板に
機械プレスで第１のスロット１３を打ち抜き加工したも
のを用い、第１のシールドスペーサ１０ａ、第２のシー
ルドスペーサ１０ｂ、第３のシールドスペーサ１１ａ、
及び第４のシールドスペーサ１１ｂには、厚さ０．３ｍ
ｍのアルミ板を機械プレスで打ち抜き加工したものを用
いた。第１のパッチパターン１２ａ及び第２のパッチパ
ターン１２ｂにおいては、図２（ｂ）に示すＬ１が、使
用する周波数７６ＧＨｚの自由空間波長（λ0＝３．９
５ｍｍ）の約０．３８倍となる１．５ｍｍとし、形状を
正方形とした。また、第１のスロット１３の寸法Ｌ３
は、使用する周波数７６ＧＨｚの自由空間波長（λ0＝
３．９５ｍｍ）の約０．５８倍となる２．３ｍｍとし、
形状を正方形とした。第１のシールドスペーサ１０ａ、
第２のシールドスペーサ１０ｂ、第３のシールドスペー
サ１１ａ、及び第４のシールドスペーサ１１ｂの寸法Ｌ
２は、第１のスロット１３の寸法Ｌ３と同じ寸法とし
た。さらに、第１の給電線路５と第１のパッチパターン
１２ａの接続部には、使用する周波数７６ＧＨｚの自由
空間波長（λ0＝３．９５ｍｍ）の約０．２４倍の長さ
のトランス線路１０１を形成し、第２の給電線路８と第
２のパッチパターン１２ｂの接続部にも同じトランス線
路１０１を形成して整合させた。以上の各部材を図２
（ａ）に示すように、順次重ねてトリプレート線路層間
接続器を構成し、第１の給電線路５及び第２の給電線路
８に計測器を接続して電力を給電すると共に、第１の給
電線路５の端部における反射損失及び第１の給電線路５
から第２の給電線路８の端面へ電力が通過する際の通過
損失を測定した結果、図５に示すように７６ＧＨｚを中
心に、±２ＧＨｚの範囲で反射損失−１５ｄＢ以下で、
通過損失も１ｄＢ以下という、良好な特性が実現でき
た。EXAMPLE 1 An aluminum plate having a thickness of 1 mm was used for a first ground conductor 1 and a third ground conductor 3, and a first dielectric 4a and a second dielectric 4 were used.
b, a foamed polyethylene foam having a thickness of 0.3 mm and a relative dielectric constant of about 1.1 is used for the third dielectric 7a and the fourth dielectric 7b, and a polyimide film is used for the first power supply substrate 6. Using a flexible substrate in which a copper foil is adhered to the first power supply line 9 and a first power supply line 5 and a first patch pattern 12a formed by removing unnecessary copper foil by etching, The second power supply line 8 and the second patch pattern 12b were formed by using the same flexible substrate as the first power supply substrate, in which a copper foil was bonded to a polyimide film, and unnecessary copper foil was removed by etching. For the second ground conductor 2, an aluminum plate having a thickness of 0.7 mm and a first slot 13 punched out by a mechanical press is used, and a first shield spacer 10a and a second shield spacer are used. 10b Third shield spacer 11a,
And the fourth shield spacer 11b has a thickness of 0.3 m.
An aluminum plate of m m was punched out by a mechanical press. In the first patch pattern 12a and the second patch pattern 12b, L1 shown in FIG. 2B is a free space wavelength (λ 0 = 3.9) at a frequency of 76 GHz to be used.
5 mm), which is 1.5 mm, which is about 0.38 times the size, and a square shape. Also, the dimension L3 of the first slot 13
Is the free space wavelength (λ 0 =
2.35 mm, which is approximately 0.58 times 3.95 mm)
The shape was square. A first shield spacer 10a,
Dimension L of second shield spacer 10b, third shield spacer 11a, and fourth shield spacer 11b
2 has the same size as the size L3 of the first slot 13. Further, a connecting portion between the first feeding line 5 and the first patch pattern 12a has a transformer line 101 having a length of about 0.24 times the free space wavelength (λ 0 = 3.95 mm) of a frequency of 76 GHz to be used. Was formed, and the same transformer line 101 was also formed at the connection between the second power supply line 8 and the second patch pattern 12b for matching. Fig. 2
As shown in (a), a triplate line interlayer connection device is sequentially superposed, a measuring instrument is connected to the first feed line 5 and the second feed line 8 to supply power, and the first feed line 5 and the second feed line 8 are fed with power. Reflection Loss at End of Feeding Line 5 and First Feeding Line 5
As a result, as shown in FIG. 5, the reflection loss was −15 dB or less in a range of ± 2 GHz around 76 GHz as shown in FIG.
Good characteristics such as a passing loss of 1 dB or less were realized.
【００１９】実施例２ 実施例１と同様に、第１の地導体１及び第３の地導体３
には、厚さ１ｍｍのアルミ板を用い、第１の誘電体４
ａ、第２の誘電体４ｂ、第３の誘電体７ａ、及び第４の
誘電体７ｂには、厚さ０．３ｍｍで比誘電率約１．１の
発泡ポリエチレンフォームを用い、第１の給電基板６に
は、ポリイミドフィルムに銅箔を貼り合わせたフレキシ
ブル基板を用い、不要な銅箔をエッチングで除去して、
第１の給電線路５と第１のパッチパターン１２ａを形成
したものを用い、第２の給電基板にも、第１の給電基板
と同様に、ポリイミドフィルムに銅箔を貼り合わせたフ
レキシブル基板を用い、不要な銅箔をエッチングで除去
して、第２の給電線路８と第２のパッチパターン１２ｂ
を形成したものを用い、第２の地導体２には、厚さ０．
７ｍｍのアルミ板に機械プレスで第１のスロット１３を
打ち抜き加工したものを用い、第１のシールドスペーサ
１０ａ、第２のシールドスペーサ１０ｂ、第３のシール
ドスペーサ１１ａ、及び第４のシールドスペーサ１１ｂ
には、厚さ０．３ｍｍのアルミ板を機械プレスで打ち抜
き加工したものを用いた。第１のパッチパターン１２ａ
及び第２のパッチパターン１２ｂにおいては、図３
（ｂ）に示す直径Ｌ４が、使用する周波数７６ＧＨｚの
自由空間波長（λ0＝３．９５ｍｍ）の約０．３８倍と
なる１．５ｍｍとし、形状を円形とした。また、スロッ
ト寸法Ｌ６は、使用する周波数７６ＧＨｚの自由空間波
長（λ0＝３．９５ｍｍ）の約０．５８倍となる直径
２．３ｍｍとし、形状を円形とし、第１のシールドスペ
ーサ１０ａ、第２のシールドスペーサ１０ｂ、第３のシ
ールドスペーサ１１ａ、及び第４のシールドスペーサ１
１ｂの寸法Ｌ５は、スロット寸法と同じ寸法とし、形状
を円形とした。さらに、第１の給電線路５と第１のパッ
チパターン１２ａの接続部に、使用する周波数７６ＧＨ
ｚの自由空間波長（λ0＝３．９５ｍｍ）の約０．２４
倍の長さのトランス線路１０１を形成し、第２の給電線
路８と第２のパッチパターン１２ｂの接続部も同じトラ
ンス線路１０１を形成して整合させた。以上の各部材を
図３（ａ）に示すように、順次重ねてトリプレート線路
層間接続器を構成し、第１の給電線路５及び第２の給電
線路８に計測器を接続して電力を給電すると共に、第１
の給電線路５の端部における反射損失及び第１の給電線
路５から第２の給電線路８の端面へ電力が通過する際の
通過損失を測定した結果、実施例１と同等の良好な特性
が実現できた。Embodiment 2 As in Embodiment 1, a first ground conductor 1 and a third ground conductor 3
1 mm thick aluminum plate, the first dielectric 4
a, a foamed polyethylene foam having a thickness of 0.3 mm and a relative dielectric constant of about 1.1 is used for the second dielectric 4b, the third dielectric 7a, and the fourth dielectric 7b. For the substrate 6, using a flexible substrate in which a copper foil is bonded to a polyimide film, unnecessary copper foil is removed by etching,
The first power supply line 5 and the first patch pattern 12a are used, and a flexible substrate in which a copper foil is bonded to a polyimide film is used for the second power supply substrate, similarly to the first power supply substrate. The unnecessary copper foil is removed by etching, and the second feed line 8 and the second patch pattern 12b are removed.
Is formed, and the second ground conductor 2 has a thickness of 0.1 mm.
The first shield spacer 10a, the second shield spacer 10b, the third shield spacer 11a, and the fourth shield spacer 11b are obtained by punching a first slot 13 by mechanical press into a 7 mm aluminum plate.
Was used in which a 0.3 mm thick aluminum plate was punched by a mechanical press. First patch pattern 12a
And the second patch pattern 12b, FIG.
The diameter L4 shown in (b) is 1.5 mm, which is about 0.38 times the free space wavelength (λ 0 = 3.95 mm) of the used frequency of 76 GHz, and the shape is circular. The slot dimension L6 is 2.3 mm in diameter, which is about 0.58 times the free space wavelength (λ 0 = 3.95 mm) of the used frequency of 76 GHz, the shape is circular, the first shield spacer 10a, 2nd shield spacer 10b, 3rd shield spacer 11a, and 4th shield spacer 1
The dimension L5 of 1b was the same as the slot dimension, and the shape was circular. Further, the connecting portion between the first power supply line 5 and the first patch pattern 12a has a frequency of 76 GHz used.
about 0.24 of the free-space wavelength of z (λ 0 = 3.95 mm)
The transformer line 101 having twice the length was formed, and the connection between the second feed line 8 and the second patch pattern 12b was also formed by the same transformer line 101 and matched. As shown in FIG. 3A, the above members are sequentially stacked to form a triplate line interlayer connector, and a measuring instrument is connected to the first feed line 5 and the second feed line 8 to supply electric power. Power and the first
As a result of measuring the reflection loss at the end of the feed line 5 and the passing loss when power passes from the first feed line 5 to the end face of the second feed line 8, good characteristics equivalent to those of the first embodiment are obtained. I realized it.
【００２０】[0020]
【発明の効果】以上に説明したように、本発明のトリプ
レート線路層間接続器によって、広帯域で周波数特性の
安定した低損失なトリプレート線路層間接続器が構成で
き、かつ、組立誤差による特性変化も少ない安価なトリ
プレート線路層間接続器を提供することができる。As described above, the triplate line interlayer connector of the present invention can form a low loss triplate line interlayer connector having stable frequency characteristics over a wide band, and a characteristic change due to an assembly error. It is also possible to provide an inexpensive triplate line interlayer connector with a small number.
【図１】本発明の一実施例を示す分解斜視図である。FIG. 1 is an exploded perspective view showing one embodiment of the present invention.
【図２】（ａ）は本発明の一実施例を示す断面図であ
り、（ｂ）は本発明の一実施例の要部平面図であり、
（ｃ）は本発明の一実施例の他の要部平面図である。FIG. 2A is a cross-sectional view illustrating an embodiment of the present invention, and FIG. 2B is a plan view of a main part of the embodiment of the present invention;
(C) is another main part plan view of an embodiment of the present invention.
【図３】（ａ）は本発明の他の実施例を示す断面図であ
り、（ｂ）は本発明の他の実施例の要部平面図であり、
（ｃ）は本発明の他の実施例の他の要部平面図である。FIG. 3A is a cross-sectional view illustrating another embodiment of the present invention, and FIG. 3B is a plan view of a main part of another embodiment of the present invention;
(C) is another main part plan view of another embodiment of the present invention.
【図４】（ａ）、（ｂ）及び（ｃ）はそれぞれ本発明の
実施例に用いたパッチパターンと給電線路の接続形態を
示す平面図である。FIGS. 4A, 4B, and 4C are plan views each showing a connection pattern between a patch pattern and a feed line used in an embodiment of the present invention.
【図５】本発明の一実施例の反射損失と通過損失の周波
数特性を示す線図である。FIG. 5 is a diagram showing frequency characteristics of reflection loss and passage loss according to one embodiment of the present invention.
【図６】従来例を示す分解斜視図である。FIG. 6 is an exploded perspective view showing a conventional example.
【図７】従来例の課題を説明するための平面図である。FIG. 7 is a plan view for explaining a problem of a conventional example.
１．第１の地導体 ２．第２の地導
体 ３．第３の地導体 ４ａ．第１の誘電体 ４ｂ．第２の誘
電体 ７ａ．第３の誘電体 ７ｂ．第４の誘
電体 ５．第１の給電線路 ８．第２の給電
線路 ６．第１の給電基板 ９．第２の給電
基板 １０ａ．第１のシールドスペーサ １０ｂ．第２の
シールドスペーサ １１ａ．第３のシールドスペーサ １１ｂ．第４の
シールドスペーサ １２ａ．第１のパッチパターン １２ｂ．第２の
パッチパターン １３．第１のスロット １４．第２のス
ロット １０１．トランス線路 １０２．整合点 １０３．ギャップ1. 1. First ground conductor Second ground conductor 3. Third ground conductor 4a. First dielectric 4b. Second dielectric 7a. Third dielectric 7b. Fourth dielectric 5. 7. First feed line Second power supply line 6. First power supply board 9. Second power supply board 10a. First shield spacer 10b. Second shield spacer 11a. Third shield spacer 11b. Fourth shield spacer 12a. First patch pattern 12b. Second patch pattern 13. First slot 14. Second slot 101. Transformer line 102. Match point 103. gap
───────────────────────────────────────────────────── フロントページの続き (72)発明者 道坂 岳央 茨城県下館市大字五所宮1150番地 日立化 成工業株式会社五所宮工場内 (72)発明者 金丸 喜一 茨城県下館市大字五所宮1150番地 日立化 成工業株式会社五所宮工場内 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Takeo Michisaka 1150 Goshomiya, Oaza, Shimodate, Ibaraki Pref.Hitachi Chemical Industry Co., Ltd. Inside the Goshonomiya factory of Hitachi Chemical Co., Ltd.
Claims (3)
の略中間に、第１の誘電体（４ａ）及び第２の誘電体
（４ｂ）に挟んだ、第１の給電線路（５）を形成した第
１の給電基板（６）を配置した第１のトリプレート線路
と、第２の地導体（２）と第３の地導体（３）の略中間
に、第３の誘電体（７ａ）及び第４の誘電体（７ｂ）に
挟んだ、第２の給電線路（８）を形成した第２の給電基
板（９）を配置した第２のトリプレート線路との電気的
接続構造であって、前記第１の給電基板（６）の第１の
給電線路（５）の接続終端部と、前記第２の給電基板
（９）の第２の給電線路（８）の接続終端部とに、それ
ぞれ第１のパッチパターン（１２ａ）、第２のパッチパ
ターン（１２ｂ）を形成し、その第１のパッチパターン
（１２ａ）の周辺部の第１の誘電体（４ａ）及び第２の
誘電体（４ｂ）を削除すると共に、その削除した箇所に
第１のパッチパターン（１２ａ）とそれに接続した第１
の給電線路（５）の形状よりも大きめのくりぬき部を有
する第１のシールドスペーサ（１０ａ）及び第２のシー
ルドスペーサ（１０ｂ）を設け、かつ、前記第２のパッ
チパターン（１２ｂ）の周辺部の第３の誘電体（７ａ）
及び第４の誘電体（７ｂ）を削除すると共に、その削除
した箇所に第２のパッチパターン（１２ｂ）とそれに接
続した第２の給電線路（８）の形状よりも大きめのくり
ぬき部を有する第３のシールドスペーサ（１１ａ）及び
第４のシールドスペーサ（１１ｂ）を設け、さらに前記
第１のパッチパターン（１２ａ）及び第２のパッチパタ
ーン（１２ｂ）の中間に位置する部分の前記第２の地導
体（２）に、第１のスロット（１３）を形成したことを
特徴とするトリプレート線路層間接続器。1. A first ground conductor (1) and a second ground conductor (2).
A first power supply substrate (6) having a first power supply line (5) formed between the first dielectric (4a) and the second dielectric (4b) is disposed substantially in the middle of the first power supply substrate (6). , And a third dielectric (7a) and a fourth dielectric (7b) sandwiched between a third dielectric (7a) and a fourth dielectric (7b) approximately in the middle between the second ground conductor (2) and the third ground conductor (3). An electrical connection structure with a second triplate line on which a second power supply board (9) having two power supply lines (8) formed therein is disposed, wherein the first power supply board (6) has a first power supply board (6). A first patch pattern (12a) and a second patch are provided at the connection end of the power supply line (5) and at the connection end of the second power supply line (8) of the second power supply board (9), respectively. A pattern (12b) is formed, and the first dielectric (4a) and the second dielectric (4b) around the first patch pattern (12a) are deleted. Rutotomoni, first connected with its first patch pattern (12a) on the deleted portion
A first shield spacer (10a) and a second shield spacer (10b) each having a hollow portion larger than the shape of the feed line (5), and a peripheral portion of the second patch pattern (12b). Third dielectric (7a)
And the fourth dielectric (7b) having a cut-out portion larger than the shape of the second patch pattern (12b) and the second feeder line (8) connected to the second patch pattern (12b) at the deleted position. A third shield spacer (11a) and a fourth shield spacer (11b), and a portion of the second ground located in the middle between the first patch pattern (12a) and the second patch pattern (12b). A triplate line interlayer connector, wherein a first slot (13) is formed in a conductor (2).
のパッチパターン（１２ｂ）の、線路接続方向の長さＬ
１を使用する周波数の自由空間波長λ0の略０．３８倍
とし、かつ第１のシールドスペーサ（１０ａ）、第２の
シールドスペーサ（１０ｂ）、第３のシールドスペーサ
（１１ａ）、及び第４のシールドスペーサ（１１ｂ）の
くりぬき部のパッチ周辺部の線路接続方向における寸法
Ｌ２及び第１のスロット（１３）の線路接続方向におけ
る寸法Ｌ３を使用する周波数の自由空間波長λ0の略
０．６倍としたことを特徴とする請求項１に記載のトリ
プレート線路層間接続器。2. A first patch pattern (12a) and a second patch pattern (12a).
L of the patch pattern (12b) in the line connection direction
1 is approximately 0.38 times the free space wavelength λ 0 of the frequency used, and the first shield spacer (10a), the second shield spacer (10b), the third shield spacer (11a), and the fourth Of the free space wavelength λ 0 of the frequency using the dimension L2 in the line connection direction of the periphery of the patch of the hollow portion of the shield spacer (11b) and the dimension L3 in the line connection direction of the first slot (13). 2. The triplate line interlayer connector according to claim 1, wherein the number is doubled.
のパッチパターン（１２ｂ）の形状を円形とし、その直
径Ｌ４を、使用する周波数の自由空間波長λ0の略０．
３８倍とし、かつ第１のシールドスペーサ（１０ａ）、
第２のシールドスペーサ（１０ｂ）、第３のシールドス
ペーサ（１１ａ）、及び第４のシールドスペーサ（１１
ｂ）のくりぬき部のパッチ周辺部の形状を円形としその
直径Ｌ５を使用する周波数の自由空間波長λ0の略０．
６倍とし、かつ、第１のスロット（１３）の形状を円形
としその直径Ｌ６を使用する周波数の自由空間波長λ0
の略０．６倍としたことを特徴とする請求項１に記載の
トリプレート線路層間接続器。3. A first patch pattern (12a) and a second patch pattern (12a).
The shape of the patch pattern (12b) is circular, its diameter L4, substantially 0 of the free space wavelength lambda 0 of the frequencies used.
38 times, and a first shield spacer (10a),
The second shield spacer (10b), the third shield spacer (11a), and the fourth shield spacer (11
b) The shape of the periphery of the patch in the hollow portion is circular, and the free space wavelength λ 0 of the frequency using the diameter L5 is approximately 0.
The free space wavelength λ 0 of the frequency using the first slot (13) having a circular shape and the diameter L6 is used.
2. The triplate line interlayer connector according to claim 1, wherein the value is approximately 0.6 times as large as .times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06183898A JP3965762B2 (en) | 1998-03-13 | 1998-03-13 | Triplate line interlayer connector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06183898A JP3965762B2 (en) | 1998-03-13 | 1998-03-13 | Triplate line interlayer connector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11261308A true JPH11261308A (en) | 1999-09-24 |
| JP3965762B2 JP3965762B2 (en) | 2007-08-29 |
Family
ID=13182646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06183898A Expired - Fee Related JP3965762B2 (en) | 1998-03-13 | 1998-03-13 | Triplate line interlayer connector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3965762B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269708A (en) * | 1999-03-15 | 2000-09-29 | Sharp Corp | Electromagnetic field coupling structure and electric circuit device using the same |
| US6545572B1 (en) | 2000-09-07 | 2003-04-08 | Hitachi Chemical Co., Ltd. | Multi-layer line interfacial connector using shielded patch elements |
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| JP2000269708A (en) * | 1999-03-15 | 2000-09-29 | Sharp Corp | Electromagnetic field coupling structure and electric circuit device using the same |
| US6545572B1 (en) | 2000-09-07 | 2003-04-08 | Hitachi Chemical Co., Ltd. | Multi-layer line interfacial connector using shielded patch elements |
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| JP2010068405A (en) * | 2008-09-12 | 2010-03-25 | New Japan Radio Co Ltd | High-frequency transmission device |
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| JP2011073012A (en) * | 2009-09-29 | 2011-04-14 | Hitachi Chem Co Ltd | Punching die, punching method, and antenna |
| WO2012108084A1 (en) * | 2011-02-08 | 2012-08-16 | 日立化成工業株式会社 | Electromagnetic coupling structure, multilayered transmission line plate, method for producing electromagnetic coupling structure, and method for producing multilayered transmission line plate |
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| JP2013005296A (en) * | 2011-06-17 | 2013-01-07 | Hitachi Chem Co Ltd | Line interlayer connector, planar array antenna having line interlayer connector and planar array antenna module |
| JP2018050239A (en) * | 2016-09-23 | 2018-03-29 | 日本ピラー工業株式会社 | Power converter and antenna device |
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