JPH11233601A - Electrostatic chucking apparatus and apparatus for processing sample using the same - Google Patents
Electrostatic chucking apparatus and apparatus for processing sample using the sameInfo
- Publication number
- JPH11233601A JPH11233601A JP2805998A JP2805998A JPH11233601A JP H11233601 A JPH11233601 A JP H11233601A JP 2805998 A JP2805998 A JP 2805998A JP 2805998 A JP2805998 A JP 2805998A JP H11233601 A JPH11233601 A JP H11233601A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dielectric film
- electrostatic
- force
- wafer support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は静電吸着装置及びそ
れを用いた試料処理装置に係り、特に、半導体製造装置
内においてウエハの搬送時や処理時のウエハの固定に用
いられ、静電気力を利用したウエハの保持に好適な静電
吸着装置及びそれを用いた試料処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic attraction device and a sample processing device using the same, and more particularly to an electrostatic attraction device used for fixing a wafer at the time of transferring or processing the wafer in a semiconductor manufacturing apparatus. The present invention relates to an electrostatic suction device suitable for holding a used wafer and a sample processing apparatus using the same.
【０００２】[0002]
【従来の技術】静電気を利用して物体を保持する方法
は、特に半導体製造装置のウエハの搬送や各プロセス中
のウエハの固定に使用されている。ウエハの搬送や固定
を行う際の保持方法としては、他にクランプを用いた機
械的な保持方法等が考えられるが、静電気力を用いる方
が半導体ウエハの保持に関して有利な点が多い。例え
ば、ウエハの処理面との機械的な接触がないために摩耗
粉等によるウエハの汚染がない、ウエハ裏面全面で吸着
するのでウエハの反りを矯正できエッチング等の微細加
工の際に吸着面との接触がより確実なものとなり、熱伝
導性が改善されウエハの温度制御が容易になる等であ
る。2. Description of the Related Art A method of holding an object using static electricity is used particularly for transferring a wafer in a semiconductor manufacturing apparatus and fixing the wafer during each process. As a holding method for carrying or fixing the wafer, a mechanical holding method using a clamp or the like can be considered, but using an electrostatic force has many advantages in holding the semiconductor wafer. For example, there is no mechanical contact with the processing surface of the wafer, so there is no contamination of the wafer by abrasion powder, etc. Is more reliable, the thermal conductivity is improved, and the temperature control of the wafer becomes easier.
【０００３】以上に示すように静電吸着はウエハの保持
方法として有利な点が多いために、特にドライエッチャ
やCVDといった装置内のウエハ処理電極として広く適用
されている。しかし、静電吸着装置では誘電膜に蓄えら
れた電荷とウエハ裏面近傍で分極した電荷の静電気力に
より吸着力を発生しているために、特にウエハを引き剥
がす場合において誘電膜に蓄えられた電荷の除電時間が
長い（つまり残留吸着力が大きい）という応答性の問題
がある。応答性が悪い、すなわち除電時間が長いとウエ
ハを次の処理室へ搬送する次動作までの待ち時間が長く
なるために装置の処理能力が低下するという弊害を生じ
る。また、通常は処理終了後のウエハを電極から取り上
げるために棒状のウエハ支持体（以下プッシャと呼ぶ）
を電極内に設けた貫通穴より上下方向に稼働させて行っ
ているが、残留吸着力に逆らって無理にウエハを引き剥
がそうとするとウエハが割れてしまうという問題を生ず
る。この傾向は、素子の高集積化にともなうウエハの大
口径化が進むほど深刻となってくる。As described above, electrostatic attraction has many advantages as a method for holding a wafer, and is therefore widely applied particularly as a wafer processing electrode in an apparatus such as a dry etcher or CVD. However, in the electrostatic attraction device, since the electrostatic force of the electric charge stored in the dielectric film and the electric charge polarized near the rear surface of the wafer generates an attraction force, the electric charge stored in the dielectric film is particularly high when the wafer is peeled off. There is a problem of responsiveness that the static elimination time is long (that is, the residual adsorption force is large). If the response is poor, that is, if the charge elimination time is long, the waiting time until the next operation of transporting the wafer to the next processing chamber becomes long, which causes a problem that the processing capacity of the apparatus is reduced. Usually, a rod-shaped wafer support (hereinafter referred to as a pusher) is used to pick up the wafer after the processing from the electrode.
Is operated in the vertical direction from the through hole provided in the electrode. However, if the wafer is forcibly peeled off against the residual suction force, the wafer will be broken. This tendency becomes more serious as the diameter of the wafer increases as the integration of devices increases.
【０００４】この様な残留吸着力による弊害に対処する
方法としては、例えば特開平6-252253号公報に開示され
ている。この開示例では、発生している残留吸着力より
弱い力を付与する脱離力付与手段と付与する脱離力の検
出手段を設け、残留吸着力が消失後直ちにウエハを脱離
する方法が示されている。A method for coping with such adverse effects due to the residual suction force is disclosed in, for example, JP-A-6-252253. In this disclosure, a method is provided in which a detaching force applying means for applying a force weaker than the generated residual suction force and a detecting means for detecting the detaching force to be applied are provided, and the wafer is detached immediately after the residual adsorption force disappears. Have been.
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記の方法で
はあらかじめ設定した値まで残留吸着力が低減した時点
でウエハを引き剥がすために、ウエハが割れたりずれた
りすることは防止することができるが、非常に大きな残
留吸着力が発生してしまった場合などは搬送までに非常
に長時間を要したり、各処理毎に発生した残留吸着力の
除電時間が異なる場合には各処理後との時間が変化して
しまうという問題がある。この様な状況では、次の処理
へ移行できなかったり、次の処理とのタイミングが合わ
ず処理効率が低下してしまうという問題が発生する。However, in the above method, the wafer is peeled off when the residual suction force has decreased to a preset value, so that the wafer can be prevented from being cracked or displaced. If a very large residual adsorption force occurs, it takes a very long time to transport, or if the residual adsorption force generated by each process is different, the There is a problem that time changes. In such a situation, there arises a problem that it is not possible to shift to the next process, or that the timing of the next process is not matched and the processing efficiency is reduced.
【０００６】本発明の目的は、ウエハ処理終了後のウエ
ハ脱離時にウエハが割れたりずれてしまうことがなく、
常にほぼ同じ除電時間でウエハの搬送が行える静電吸着
装置及びそれを用いた試料処理装置を提供することであ
る。An object of the present invention is to prevent the wafer from being broken or displaced when the wafer is detached after the wafer processing is completed.
An object of the present invention is to provide an electrostatic attraction device capable of always transferring a wafer with substantially the same static elimination time and a sample processing device using the same.
【０００７】[0007]
【課題を解決するための手段】上記の目的は、静電吸着
終了後にウエハを脱離する際にプッシャかかる力の検出
手段を備え、検出手段からの信号をもとに前記ウエハ支
持体の移動速度を制御することにより達成できる。ま
た、ウエハ積載時のウエハ外周の外の領域に、少なくと
も誘電膜表面より突出したガイドを備えることにより、
より確実にウエハのズレ防止を達成できる。さらに、ウ
エハをウエハ支持体により脱離する際に発生する力が事
前に設定した値を超えた場合には、ウエハ支持体を停止
した状態でウエハを吸着中に電極に印加したのとは極性
の異なる電圧を印加することにより達成できる。SUMMARY OF THE INVENTION The object of the present invention is to provide means for detecting a force applied by a pusher when a wafer is detached after completion of electrostatic attraction, and to move the wafer support based on a signal from the detecting means. This can be achieved by controlling the speed. Further, by providing a guide projecting from at least the surface of the dielectric film in a region outside the outer periphery of the wafer when the wafer is loaded,
Prevention of wafer displacement can be achieved more reliably. Furthermore, if the force generated when the wafer is detached by the wafer support exceeds a preset value, applying a voltage to the electrode while the wafer is being suctioned while the wafer support is stopped is a polarity. Can be achieved by applying different voltages.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施例を図にした
がって説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【０００９】図1に本発明の第一の実施例を示す。この
図は静電チャック９を積載したフランジ８が処理装置の
チャンバ壁７に固定された状態を示している。図中１２
は真空を封じきるOリングである。本実施例の静電チャ
ック９はアルミナ製の誘電膜３の内部に同芯状にタング
ステン製の外電極１と内電極２を内蔵したダイポール方
式の静電チャックである。この誘電膜３はアルミ製のブ
ロック１１上にセラミクス系の接着剤で固定されてお
り、セラミクス製の絶縁部材１０によりフランジ８と電
気的に絶縁されつつ固定されている。ウエハ４は、外電
極１と内電極２に直流電圧を印加することにより静電気
的に吸着されるが、本実施例では外電極１に対してはス
イッチ１３を介してマイナスの直流電源１７に、内電極
２に対してはスイッチ１４を介してプラスの直流電源１
８に接続している。吸着終了後にはスイッチの切り替え
により内電極と外電極に同時に接地電位を与えて誘電膜
とウエハの間に蓄えられた電荷の除電をおこなう。な
お、図中１５と１６は各電極と直流電源を接続するリー
ド線である。そして除電終了後、ウエハ支持体５の上昇
動作によりウエハ４を誘電膜３から引き剥がす。本実施
例ではウエハ支持体５は同心円上に４本、等間隔で設け
てある。このウエハ支持体は、誘電膜３とブロック１
１、絶縁部材１０を貫通し、チャンバ外の支持板１９に
固定されている。ここで、ウヘハ支持体５の昇降運動時
に真空漏れを起こさないようにベローズ２０により真空
が保たれている。この支持板１９は荷重計６を介したラ
ックギア２１に接続されており、フランジ８に据え付け
られた固定カバー３６に設けられたモータ固定台２２に
固定されたパルスモータ２３のピニオンギア２４の回転
運動により昇降運動をおこなう。なお２５は支持板１９
の昇降をスムーズにする直動軸受であり、３５はガイド
棒である。本実施例に適用した荷重計６はひずみゲージ
式のロードセルであり、出力する信号はアンプ２６によ
り増幅され、信号処理回路２７により残留吸着力に換算
される。また、本実施例では得られた値をパルスモータ
２３の回転を制御するコントローラ２８にフィードバッ
クし、ウエハ支持体５の昇降運動を制御している。以下
に具体的な制御方法を説明する。FIG. 1 shows a first embodiment of the present invention. This figure shows a state in which the flange 8 on which the electrostatic chuck 9 is mounted is fixed to the chamber wall 7 of the processing apparatus. 12 in the figure
Is an O-ring that seals the vacuum. The electrostatic chuck 9 of the present embodiment is a dipole electrostatic chuck in which an outer electrode 1 and an inner electrode 2 made of tungsten are concentrically built inside a dielectric film 3 made of alumina. The dielectric film 3 is fixed on a block 11 made of aluminum with a ceramic-based adhesive, and is fixed while being electrically insulated from the flange 8 by an insulating member 10 made of ceramics. The wafer 4 is electrostatically attracted by applying a DC voltage to the outer electrode 1 and the inner electrode 2. In this embodiment, the wafer 4 is connected to the negative DC power supply 17 via the switch 13 for the outer electrode 1. A positive DC power supply 1 is connected to the inner electrode 2 through the switch 14.
8 is connected. After the end of the suction, the switches are switched to apply a ground potential to the inner electrode and the outer electrode at the same time, thereby eliminating charges accumulated between the dielectric film and the wafer. In the drawing, reference numerals 15 and 16 denote lead wires for connecting each electrode to a DC power supply. After completion of the charge removal, the wafer 4 is peeled off from the dielectric film 3 by the raising operation of the wafer support 5. In this embodiment, four wafer supports 5 are provided on a concentric circle at equal intervals. The wafer support comprises the dielectric film 3 and the block 1
1. It penetrates the insulating member 10 and is fixed to the support plate 19 outside the chamber. Here, a vacuum is maintained by the bellows 20 so as not to cause a vacuum leak during the elevating movement of the wafer support 5. The support plate 19 is connected to the rack gear 21 via the load meter 6, and the rotational motion of the pinion gear 24 of the pulse motor 23 fixed to the motor fixing base 22 provided on the fixed cover 36 mounted on the flange 8. Performs a lifting motion. 25 is a support plate 19
Is a linear motion bearing for smoothly moving up and down, and 35 is a guide rod. The load cell 6 applied to this embodiment is a load cell of a strain gauge type, and an output signal is amplified by an amplifier 26 and converted into a residual suction force by a signal processing circuit 27. Further, in this embodiment, the obtained value is fed back to the controller 28 for controlling the rotation of the pulse motor 23 to control the vertical movement of the wafer support 5. A specific control method will be described below.
【００１０】除電が完全に終了していれば荷重計６には
残留吸着力は観測されないが、除電時間が不十分な場合
には図２に示すような残留吸着力が観測される。図中で
ウエハ支持体が上昇開始してからと、ウエハが誘電膜か
ら引き剥がされた後も力が発生しているのは、本実施例
でウエハ支持体をベローズに取り付けているためであ
り、ベローズの弾性力によるものである。したがって、
残留吸着力はベローズの弾性力成分に重畳して観測され
ることになる。アンプで増幅された図２のような信号が
信号処理回路に送られると、この信号をもとにパルスモ
ータのコントローラを制御する。つまり、信号処理回路
２７には、予めウエハ支持体の昇降速度が残留吸着力に
応じて最適となるようプログラムがなされている。本実
施例では、図２中のレベル１までは昇降速度は６cm/s、
レベル２までは３cm/s、レベル３では１cm/sに設定して
いる。If the static elimination is completed, no residual attraction force is observed on the load cell 6, but if the static elimination time is insufficient, the residual attraction force as shown in FIG. 2 is observed. In the drawing, the force is generated even after the wafer support starts to be lifted and after the wafer is peeled off from the dielectric film, because the wafer support is attached to the bellows in this embodiment. , Due to the elastic force of the bellows. Therefore,
The residual adsorption force is observed superimposed on the elastic force component of the bellows. When a signal as shown in FIG. 2 amplified by the amplifier is sent to the signal processing circuit, the controller of the pulse motor is controlled based on this signal. That is, the signal processing circuit 27 is programmed in advance so that the elevating speed of the wafer support is optimized in accordance with the residual suction force. In this embodiment, the lifting speed is 6 cm / s up to level 1 in FIG.
Level 2 is set to 3 cm / s, and level 3 is set to 1 cm / s.
【００１１】この様に構成された静電吸着装置では残留
吸着力がある程度残った場合でも、ウエハを引き剥がす
ときの昇降速度を制御可能であるためにウエハのズレを
最小限に抑えることができ、装置の稼働率の低下を最小
限に抑えることが可能となる。In the electrostatic chuck having the above-described structure, even when the residual chucking force remains to some extent, since the elevating speed at the time of peeling the wafer can be controlled, the displacement of the wafer can be minimized. In addition, it is possible to minimize a decrease in the operation rate of the apparatus.
【００１２】本実施例で説明した静電吸着装置は直流電
圧を印加する電極を２個有するダイポール方式であった
が、必ずしもそうである必要はなく、プラズマとチャン
バを介して吸着するモノポール方式の静電吸着装置でも
同様の効果を期待することができる。また、静電吸着装
置の２個の電極に印加する直流電源の極性は反対であっ
てもよいし、いずれか一方の電極のみに直流電圧を印加
し、もう一方は接地する回路構成であってもよい。さら
に、本実施例では発生した残留吸着力の大きさを３つの
レベルにわけて、ウエハ支持体の上昇速度も３段階に制
御しているが必ずしもこの様にする必要はなく、状況に
応じて適宜調整すればよい。Although the electrostatic chuck described in this embodiment is of the dipole type having two electrodes to which a DC voltage is applied, this is not always necessary, and the monopole type in which the plasma and the chamber are adsorbed through the chamber is used. The same effect can be expected with the electrostatic suction device described above. Further, the polarity of the DC power supply applied to the two electrodes of the electrostatic chuck may be opposite, or the DC voltage may be applied to only one of the electrodes and the other may be grounded. Is also good. Further, in this embodiment, the magnitude of the generated residual suction force is divided into three levels, and the rising speed of the wafer support is controlled in three stages. It may be adjusted appropriately.
【００１３】図３、図４には本発明の第二の実施例を示
す。図３は第二の実施例の断面図であり、図４は実際に
ウエハを引き剥がしたときの斜視図である。本実施例で
は第一の実施例の静電吸着装置の誘電膜外周部分に、誘
電膜表面よりも高さのあるガイド２９を設けている。ま
た、このガイドの内筒端部のウエハの開口部分には傾斜
３０が付けられている。したがって、第一の実施例で示
したように残留吸着力が発生していた場合にウエハ支持
体によりウエハを引き剥がして若干のズレが発生した場
合であってもガイドの傾斜部でウエハのズレが矯正され
るので大きくズレてしまうことが防止できる。FIGS. 3 and 4 show a second embodiment of the present invention. FIG. 3 is a sectional view of the second embodiment, and FIG. 4 is a perspective view when the wafer is actually peeled off. In the present embodiment, a guide 29 having a height higher than the surface of the dielectric film is provided on the outer peripheral portion of the dielectric film of the electrostatic chuck of the first embodiment. An inclined portion 30 is provided at the opening of the wafer at the end of the inner cylinder of the guide. Therefore, even when the wafer is peeled off by the wafer support and a slight displacement occurs when the residual suction force is generated as shown in the first embodiment, the wafer is displaced by the inclined portion of the guide. Is corrected, so that a large deviation can be prevented.
【００１４】図５には本発明の第三の実施例を示す。本
実施例では外電極１と内電極２にそれぞれスイッチ３
１、３２を介して正負両方の極性の直流電源３３、３４
を接続している。そして、吸着中には外電極にはマイナ
ス、内電極にはプラスの電圧を印加する。吸着終了後に
は、第一の実施例と同様にウエハ支持体の上昇速度を制
御しながらウエハを引き剥がそうとするが、ウエハ裏面
に酸化膜等が付くなどして残留吸着力が大きい場合に
は、信号処理装置の命令によりウエハ支持体の上昇を停
止し、スイッチの切り替えにより吸着中とは逆の極性の
直流電圧を印加し残留吸着力を低下させウエハを引き剥
がすことができる。この様に構成された静電吸着装置で
は、残留吸着力が非常に大きい場合でもウエハを破損す
ることなく引き剥がすことができ、稼働率のよい処理装
置を提供することができる。FIG. 5 shows a third embodiment of the present invention. In this embodiment, a switch 3 is provided for each of the outer electrode 1 and the inner electrode 2.
DC power supplies 33, 34 of both positive and negative polarities via 1, 32
Are connected. During adsorption, a negative voltage is applied to the outer electrode and a positive voltage is applied to the inner electrode. After the end of the suction, the wafer is to be peeled while controlling the rising speed of the wafer support as in the first embodiment. However, when the residual suction force is large due to an oxide film or the like attached to the back surface of the wafer. Can stop the raising of the wafer support in response to a command from the signal processing device, apply a DC voltage having a polarity opposite to that during suction by switching a switch, reduce the residual suction force, and peel off the wafer. In the electrostatic suction apparatus configured as described above, even when the residual suction force is extremely large, the wafer can be peeled off without being damaged, and a processing apparatus with a high operating rate can be provided.
【００１５】[0015]
【発明の効果】ウエハ処理終了後のウエハ脱離時にウエ
ハが割れたりずれてしまうことがなく、常にほぼ同じ除
電時間でウエハの搬送が行える静電吸着装置を提供する
ことができる。According to the present invention, it is possible to provide an electrostatic chucking apparatus that can always transfer a wafer with substantially the same static elimination time without breaking or shifting the wafer when the wafer is detached after the wafer processing is completed.
【図１】本発明の静電吸着装置の一実施例を示す断面図
である。FIG. 1 is a cross-sectional view showing an embodiment of the electrostatic suction device of the present invention.
【図２】図１の装置において測定された残留吸着力の測
定例を示す図である。FIG. 2 is a diagram showing a measurement example of a residual suction force measured by the apparatus of FIG.
【図３】本発明の静電吸着装置の第二の実施例を示す断
面図である。FIG. 3 is a sectional view showing a second embodiment of the electrostatic suction device of the present invention.
【図４】図３の装置の斜視図である。FIG. 4 is a perspective view of the device of FIG. 3;
【図５】本発明の静電吸着装置の第三の実施例を示す断
面図である。FIG. 5 is a sectional view showing a third embodiment of the electrostatic suction device of the present invention.
【符号の説明】 １…外電極、２…内電極、３…誘電膜、４…ウエハ、５
…ウエハ支持体、６…荷重計、７…チャンバ壁、８…フ
ランジ、９…静電チャック、１０…絶縁部材、１１…ブ
ロック、１２…Oリング、１３…スイッチ、１４…スイ
ッチ、１５…リード線、１６…リード線、１７…マイナ
ス直流電源、１８…プラス直流電源、１９…支持板、２
０…ベローズ、２１…ラックギア、２２…モータ固定
台、２３…パルスモータ、２４…ピニオンギア、２５…
直動軸受、２６…アンプ、２７…信号処理回路、２８…
コントローラ、２９…ガイド、３０…傾斜、３１…スイ
ッチ、３２…スイッチ、３３…直流電源、３４…直流電
源、３５…ガイド棒、３６…固定カバー。[Description of Signs] 1 ... Outer electrode, 2 ... Inner electrode, 3 ... Dielectric film, 4 ... Wafer, 5
... Wafer support, 6 ... Load cell, 7 ... Chamber wall, 8 ... Flange, 9 ... Electrostatic chuck, 10 ... Insulating member, 11 ... Block, 12 ... O-ring, 13 ... Switch, 14 ... Switch, 15 ... Lead Wire, 16 lead wire, 17 minus DC power supply, 18 plus DC power supply, 19 support plate, 2
0: bellows, 21: rack gear, 22: motor fixing stand, 23: pulse motor, 24: pinion gear, 25 ...
Linear bearings, 26 amplifier, 27 signal processing circuit, 28
Controller, 29: Guide, 30: Incline, 31: Switch, 32: Switch, 33: DC power supply, 34: DC power supply, 35: Guide rod, 36: Fixed cover.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 金井 三郎 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 高橋 主人 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Saburo Kanai 794, Higashi-Toyoi, Katsumatsu-shi, Kamamatsu-shi, Yamaguchi Prefecture Inside the Kasado Plant of Hitachi, Ltd. Inside the Kasado Plant of Hitachi, Ltd.
Claims (4)
積層させた誘電膜とを有し、該誘電膜とウエハとの間に
電界を発生させ、静電気力によって前記ウエハを吸着固
定するとともに、前記電極および前記誘電膜に設けられ
た貫通穴に沿って移動可能な少なくとも３本以上のウエ
ハ支持体を備え、該ウエハ支持体により前記ウエハを前
記誘電膜表面への配置及び脱離をおこなう静電吸着装置
において、前記ウエハ支持体には前記ウエハを脱離させ
る際にかかる力の検出手段を備え、該検出手段からの信
号をもとに前記ウエハ支持体の移動速度を制御する手段
を設けたことを特徴とする静電吸着装置。An electrode made of a conductive material and a dielectric film laminated on the surface of the electrode, an electric field is generated between the dielectric film and the wafer, and the wafer is attracted and fixed by electrostatic force. And at least three or more wafer supports movable along through-holes provided in the electrodes and the dielectric film, and the wafer support allows the wafer to be disposed on and separated from the surface of the dielectric film. In the electrostatic chuck, the wafer support is provided with a means for detecting a force applied when the wafer is detached, and a means for controlling a moving speed of the wafer support based on a signal from the detection means. An electrostatic attraction device characterized by comprising:
前記ウエハ配置時のウエハ外周の外の領域に、少なくと
も誘電膜表面より突出したガイドを備えたことを特徴と
する静電吸着装置。2. The electrostatic attraction device according to claim 1, wherein
An electrostatic attraction device comprising a guide protruding from at least the surface of the dielectric film in a region outside the outer periphery of the wafer when the wafer is arranged.
前記ウエハを前記ウエハ支持体により脱離する際に発生
する力が事前に設定した値を超えた場合には、前記ウエ
ハ支持体を停止した状態で前記ウエハを吸着中に電極に
印加したのとは極性の異なる電圧を印加しウエハを脱離
することを特徴とする静電吸着装置。3. The electrostatic attraction device according to claim 1, wherein
When the force generated when the wafer is detached by the wafer support exceeds a preset value, the wafer support is stopped and the wafer is applied to the electrode during suction. Is a device for applying a voltage having a different polarity to detach a wafer.
えたことを特徴とする試料処理装置。4. A sample processing apparatus comprising the electrostatic adsorption device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2805998A JPH11233601A (en) | 1998-02-10 | 1998-02-10 | Electrostatic chucking apparatus and apparatus for processing sample using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2805998A JPH11233601A (en) | 1998-02-10 | 1998-02-10 | Electrostatic chucking apparatus and apparatus for processing sample using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11233601A true JPH11233601A (en) | 1999-08-27 |
Family
ID=12238199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2805998A Pending JPH11233601A (en) | 1998-02-10 | 1998-02-10 | Electrostatic chucking apparatus and apparatus for processing sample using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11233601A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001257252A (en) * | 2000-03-09 | 2001-09-21 | Matsushita Electric Ind Co Ltd | Vacuum treater and method of controlling removal of substrate therein |
| KR100376879B1 (en) * | 2000-11-01 | 2003-03-19 | 주식회사 하이닉스반도체 | Sticking free electrostatic chuck |
| WO2003100849A1 (en) * | 2002-05-28 | 2003-12-04 | Tokyo Electron Limited | Semiconductor processor |
| JP2004531883A (en) * | 2001-03-30 | 2004-10-14 | ラム リサーチ コーポレーション | Semiconductor wafer lifting device and mounting method thereof |
| JP2004343110A (en) * | 2003-05-09 | 2004-12-02 | Asml Netherlands Bv | Lithography apparatus, manufacturing method of device, and device manufactured by it |
| KR100856152B1 (en) | 2005-11-21 | 2008-09-03 | 도쿄엘렉트론가부시키가이샤 | Unloading method of object, program storage medium, and mounting mechanism |
| CN100423224C (en) * | 2005-12-09 | 2008-10-01 | 北京圆合电子技术有限责任公司 | Wafer lifting device and lifting method |
| JP2014104572A (en) * | 2012-11-30 | 2014-06-09 | Nabeya Co Ltd | Magnetic attraction device |
| CN105171480A (en) * | 2015-09-16 | 2015-12-23 | 竹昌精密冲压件(上海)有限公司 | Vacuum detection device |
| JP2019087605A (en) * | 2017-11-06 | 2019-06-06 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate delivery system and substrate delivery method |
| WO2019137497A1 (en) * | 2018-01-12 | 2019-07-18 | 上海微电子装备（集团）股份有限公司 | Substrate transfer mechanism, photoetching machine and substrate transfer method |
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-
1998
- 1998-02-10 JP JP2805998A patent/JPH11233601A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001257252A (en) * | 2000-03-09 | 2001-09-21 | Matsushita Electric Ind Co Ltd | Vacuum treater and method of controlling removal of substrate therein |
| KR100376879B1 (en) * | 2000-11-01 | 2003-03-19 | 주식회사 하이닉스반도체 | Sticking free electrostatic chuck |
| JP2004531883A (en) * | 2001-03-30 | 2004-10-14 | ラム リサーチ コーポレーション | Semiconductor wafer lifting device and mounting method thereof |
| WO2003100849A1 (en) * | 2002-05-28 | 2003-12-04 | Tokyo Electron Limited | Semiconductor processor |
| JP4667433B2 (en) * | 2003-05-09 | 2011-04-13 | エーエスエムエル ネザーランズ ビー．ブイ． | Lithographic apparatus and device manufacturing method |
| JP2004343110A (en) * | 2003-05-09 | 2004-12-02 | Asml Netherlands Bv | Lithography apparatus, manufacturing method of device, and device manufactured by it |
| JP2008010886A (en) * | 2003-05-09 | 2008-01-17 | Asml Netherlands Bv | Lithographic equipment, and device manufacturing method |
| US7327438B2 (en) | 2003-05-09 | 2008-02-05 | Asml Netherlands B.V. | Lithographic apparatus and method of a manufacturing device |
| KR100856152B1 (en) | 2005-11-21 | 2008-09-03 | 도쿄엘렉트론가부시키가이샤 | Unloading method of object, program storage medium, and mounting mechanism |
| CN100423224C (en) * | 2005-12-09 | 2008-10-01 | 北京圆合电子技术有限责任公司 | Wafer lifting device and lifting method |
| JP2014104572A (en) * | 2012-11-30 | 2014-06-09 | Nabeya Co Ltd | Magnetic attraction device |
| CN103846708A (en) * | 2012-11-30 | 2014-06-11 | 株式会社锅屋 | Magnetic adsorption device |
| CN105171480A (en) * | 2015-09-16 | 2015-12-23 | 竹昌精密冲压件(上海)有限公司 | Vacuum detection device |
| JP2019087605A (en) * | 2017-11-06 | 2019-06-06 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate delivery system and substrate delivery method |
| WO2019137497A1 (en) * | 2018-01-12 | 2019-07-18 | 上海微电子装备（集团）股份有限公司 | Substrate transfer mechanism, photoetching machine and substrate transfer method |
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