JPH11214612A - Power semiconductor module - Google Patents
Power semiconductor moduleInfo
- Publication number
- JPH11214612A JPH11214612A JP1228898A JP1228898A JPH11214612A JP H11214612 A JPH11214612 A JP H11214612A JP 1228898 A JP1228898 A JP 1228898A JP 1228898 A JP1228898 A JP 1228898A JP H11214612 A JPH11214612 A JP H11214612A
- Authority
- JP
- Japan
- Prior art keywords
- metal base
- insulating substrate
- power semiconductor
- semiconductor module
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、パワー半導体装置
に係り特に高耐圧パワー半導体モジュールの構造に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device and, more particularly, to a structure of a high voltage power semiconductor module.
【０００２】[0002]
【従来の技術】従来からＩＧＢＴ，ＧＴＯ，パワートラ
ンジスタなどのパワー半導体スイッチング素子が、絶縁
容器内に封入されたパワー半導体モジュールが知られて
いる。これらの素子はその耐圧や電流容量に応じて、各
種インバータ装置などに応用されている。中でもＩＧＢ
Ｔは、電圧制御素子のため制御が容易であり、大電流の
高周波動作が可能であるなどの利点を有している素子で
ある。また、モジュール使用上の簡便性の点から多くの
場合はモジュールのベース部分と電流通電部分が電気的
に絶縁された内部絶縁型の構造となっている。2. Description of the Related Art A power semiconductor module in which a power semiconductor switching element such as an IGBT, a GTO, or a power transistor is sealed in an insulating container has been known. These elements are applied to various inverter devices and the like according to their withstand voltage and current capacity. Above all, IGB
T is an element which has an advantage that it is easy to control because it is a voltage control element and that high-frequency operation with a large current is possible. In many cases, the module has an internal insulation structure in which the base portion and the current-carrying portion are electrically insulated from the viewpoint of simplicity in using the module.
【０００３】従来の構造を、製造プロセスに従って図１
０にて説明する。従来構造では、アルミナやＡＬＮセラ
ミックに銅パターンを接続した絶縁基板３上に、半導体
素子４を半田５により接合し、電極引き出しのために半
導体素子４と絶縁基板３の電極板上にＡＬワイヤー６な
どでボンディング接続される。この絶縁基板３は、モジ
ュールの冷却板である平面な金属ベース１に半田２によ
り接合されるが、この半田２は半田５よりも融点が低い
ものが使用される。モジュールの外部端子と絶縁板３上
の電極の接続は、外部端子と一体化した銅リード８及び
１２でなされ、絶縁基板電極部へ半田７により接合され
る。この半田７は半田２と同じ融点のものを使用してい
る。この外部端子は一般に端子ブロックと呼ばれる。金
属ベース１にモールド形成された樹脂ケース１０が接着
剤１１により接着される。この中にゲル９が注入硬化さ
れる。以上がＩＧＢＴモジュールの一般的製造プロセス
及び構造である。A conventional structure is shown in FIG.
0 will be described. In the conventional structure, a semiconductor element 4 is joined by solder 5 on an insulating substrate 3 in which a copper pattern is connected to alumina or ALN ceramic, and an AL wire 6 is placed on the semiconductor element 4 and an electrode plate of the insulating substrate 3 to extract electrodes. Bonding connection. The insulating substrate 3 is joined to a flat metal base 1 serving as a cooling plate of the module by solder 2, and the solder 2 having a lower melting point than the solder 5 is used. The external terminals of the module and the electrodes on the insulating plate 3 are connected by copper leads 8 and 12 integrated with the external terminals, and are joined to the electrode portions of the insulating substrate by solder 7. The solder 7 has the same melting point as the solder 2. This external terminal is generally called a terminal block. A resin case 10 molded on the metal base 1 is adhered by an adhesive 11. The gel 9 is injected and cured therein. The above is the general manufacturing process and structure of the IGBT module.
【０００４】尚、この種のモジュール構造として関連す
るものに、特願平6−243654 号公報を挙げることができ
る[0004] Japanese Patent Application No. 6-243654 discloses a module structure of this type.
【０００５】[0005]
【発明が解決しようとする課題】上記従来技術において
は次のような問題点がある。The above prior art has the following problems.
【０００６】金属ベース１に絶縁基板３を半田２で接合
し、この後に一体化した銅リード８を半田７で接合させ
るが、同一融点の半田のためにこの時絶縁基板３下の半
田２も再溶融される。この時金属ベース１の反りや絶縁
基板３の反り，組立の冶具などの傾きなどにより溶融し
た半田２が流れ出したり、絶縁基板３がずれたりするこ
とによる接合不良や、流れ出した半田により絶縁基板３
上にまで盛り上がり絶縁不良が発生する問題がある。[0006] An insulating substrate 3 is joined to a metal base 1 by solder 2, and then an integrated copper lead 8 is joined by solder 7. Remelted. At this time, the melted solder 2 flows out due to the warpage of the metal base 1, the warp of the insulating substrate 3, the inclination of an assembling jig, or the like, the bonding failure due to the displacement of the insulating substrate 3, or the flowing out solder, and
There is a problem that the insulation rises to the top and insulation failure occurs.
【０００７】また金属ベース１と樹脂ケース１０を接着
剤１１で接着密封するが、金属ベース１の反りによる密
着不良や、接着剤１１のケース１０内部へのはみ出した
形状によりゲル内部への亀裂（ゲルクラック）を発生さ
せ絶縁不良が発生する問題がある。The metal base 1 and the resin case 10 are bonded and sealed with an adhesive 11. However, cracks in the gel due to poor adhesion due to warpage of the metal base 1 and the shape of the adhesive 11 protruding into the case 10 ( There is a problem that gel cracks) occur and insulation failure occurs.
【０００８】金属ベースの反りを低減させるには、ベー
スを厚くして剛性を持たせる方法があるが、これでは反
り量は抑えることは出来るがベースが厚くなった分モジ
ュールの熱抵抗が大きくなり、またモジュールの重量も
増して例えば使用可能な最大損失や実装方法などが制限
されることになる。In order to reduce the warpage of the metal base, there is a method of increasing the rigidity by increasing the thickness of the base. However, with this method, the amount of warpage can be suppressed, but the thermal resistance of the module increases as the base becomes thicker. In addition, the weight of the module increases, and for example, the maximum usable loss and the mounting method are limited.
【０００９】本発明の目的は、前記課題を解決し高信頼
性なパワー半導体モジュールの構造を提供することにあ
る。An object of the present invention is to solve the above problems and to provide a highly reliable power semiconductor module structure.
【００１０】[0010]
【課題を解決するための手段】前記課題を解決し高信頼
性なパワー半導体モジュールを得るために、本発明では
次のような手段を用いた。In order to solve the above problems and obtain a highly reliable power semiconductor module, the present invention uses the following means.
【００１１】従来構造では、平面な金属ベースに半導体
素子を半田接合した絶縁基板，樹脂ケースなどを接合接
着しているのに対し、金属ベース主面上に１つ以上の凹
凸面を設けることにより、良好な絶縁基板の接着，樹脂
ケースの接着を行う手段を備えている点にある。In the conventional structure, an insulating substrate in which a semiconductor element is soldered to a flat metal base, a resin case, and the like are bonded and bonded. On the other hand, by providing at least one uneven surface on the main surface of the metal base. And a means for performing good bonding of the insulating substrate and bonding of the resin case.
【００１２】また、金属ベース反主面上に複数個の凹凸
部を設けることにより、熱放散を向上させる手段を備え
ている点にある。Another feature is that a means for improving heat dissipation is provided by providing a plurality of uneven portions on the opposite main surface of the metal base.
【００１３】本発明の前記手段により、次の作用が得ら
れる。The following effects can be obtained by the above means of the present invention.
【００１４】金属ベース主面上の絶縁基板接続面を凹
部、又は周辺部を凸部形状にすることにより、絶縁基板
がこの凹凸部で固定され、また半田流れや樹脂ケースの
接着剤の内部はみ出しも抑止される。By forming the connection surface of the insulating substrate on the main surface of the metal base into a concave portion or the peripheral portion into a convex shape, the insulating substrate is fixed by the concave and convex portions, and the solder flows and the adhesive inside the resin case protrudes. Is also deterred.
【００１５】また金属ベース主面上の樹脂ケース接着面
の厚みを他の面の厚みよりも厚くすることにより、金属
ベースの反りを抑制することができる。By making the thickness of the resin case bonding surface on the main surface of the metal base larger than the thickness of the other surfaces, the warpage of the metal base can be suppressed.
【００１６】また金属ベースの反主面上に複数個の凹凸
部を設けることにより、金属ベースの表面積が増加し熱
放散を向上することができる。By providing a plurality of concave and convex portions on the opposite main surface of the metal base, the surface area of the metal base can be increased and the heat dissipation can be improved.
【００１７】[0017]
【発明の実施の形態】以下本発明の実施例を図面を用い
て説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１８】図１は本発明を適用したＩＧＢＴモジュー
ルに適用した断面構造図、図２は金属ベースを上から見
た平面図である。図１０の従来構造と同一符号は同一要
素を示す。ＡＬＮセラミックに銅パターンを接続した絶
縁基板３上に、ＩＧＢＴチップ４を半田５により接合
し、電極引き出しのためにＩＧＢＴチップ４と絶縁基板
３の電極板上にＡＬワイヤー６でボンディング接続され
る。この絶縁基板３は、モジュールの冷却板である金属
ベース１０１に半田２により接続される。本実施例で
は、この絶縁基板３を２枚並列接続している。この金属
ベース１０１には、絶縁基板３が半田付けされる面１０
１ａ面が他の面よりも凹面となっており、絶縁基板３が
この凹面１０１ａに半田接続される。この凹面１０１ａ
は、絶縁基板３の形状に合わせ形成される。絶縁基板３
の接合に使用する半田２は、ＩＧＢＴチップ４を半田５
よりも融点の低いものが使用される。モジュールの外部
端子と絶縁基板３上の電極の接続は、外部端子と一体化
した銅リード８、及び１２でなされ絶縁基板電極部へ半
田７により並列接続される。この半田７は半田２と同じ
融点のものを使用している。金属ベース１０１にモール
ド形成された樹脂ケース１０が接着剤１１により接着さ
れる。この中にゲル９が注入硬化され密封封止される構
造となっている。上記で説明したＩＧＢＴモジュールに
おいては、金属ベース１０１に絶縁基板３が接続される
面１０１ａ面を凹面に形成しているが、この凹面により
絶縁基板３が固定されるため半田流れや、絶縁基板のず
れが抑止され良好な接合を形成することができる。また
絶縁基板３の接合面が他の面よりも薄くなっているた
め、熱抵抗も小さくなり冷却効率が向上する。組立面に
おいても、従来絶縁基板３と金属ベース１を接合する場
合、カーボンなどの材質で作られた組立用冶具を使用し
ていたがこの金属ベース１０１を使用することにより凹
部が冶具の代用となり組立用冶具が不要となる。FIG. 1 is a sectional structural view applied to an IGBT module to which the present invention is applied, and FIG. 2 is a plan view of a metal base as viewed from above. The same reference numerals as those in the conventional structure in FIG. 10 indicate the same elements. An IGBT chip 4 is bonded by solder 5 on an insulating substrate 3 in which a copper pattern is connected to an ALN ceramic, and is bonded to an IGBT chip 4 and an electrode plate of the insulating substrate 3 with an AL wire 6 for extracting electrodes. This insulating substrate 3 is connected to a metal base 101 which is a cooling plate of the module by solder 2. In this embodiment, two insulating substrates 3 are connected in parallel. The metal base 101 has a surface 10 to which the insulating substrate 3 is soldered.
The surface 1a is more concave than the other surfaces, and the insulating substrate 3 is soldered to the concave surface 101a. This concave surface 101a
Is formed according to the shape of the insulating substrate 3. Insulating substrate 3
IGBT chip 4 is solder 5
Those having a lower melting point are used. The connection between the external terminals of the module and the electrodes on the insulating substrate 3 is made by copper leads 8 and 12 integrated with the external terminals, and connected in parallel to the electrode portions of the insulating substrate by solder 7. The solder 7 has the same melting point as the solder 2. A resin case 10 molded on a metal base 101 is adhered by an adhesive 11. The structure is such that the gel 9 is injected and cured therein, and hermetically sealed. In the IGBT module described above, the surface 101a of the metal base 101 to which the insulating substrate 3 is connected is formed as a concave surface. Displacement is suppressed, and a good junction can be formed. Further, since the bonding surface of the insulating substrate 3 is thinner than the other surfaces, the thermal resistance is reduced and the cooling efficiency is improved. Also on the assembly side, when the insulating substrate 3 and the metal base 1 are conventionally joined together, an assembling jig made of a material such as carbon has been used. However, by using the metal base 101, the concave portion becomes a substitute for the jig. Eliminates the need for assembly jigs.
【００１９】この金属ベース１０１の材質としては、Ｃ
ｕ板，Ｍｏ板および複合材，ＡＬ．ＳＩＣなどがあげら
れるが、Ｃｕ板，Ｍｏ板ではこの凹面は機械加工やプレ
ス等で行わなければならず、特にＭｏ板では硬度が高い
ために機械加工が困難とされる。このため、ＡＬ．ＳＩ
ＣやＣｕ．ＳＩＣなどの鋳造で形成される材料が望まし
い。これらの材料であれば、金型の成形により凹部形成
は金属ベース形成時に一体成形されるため、機械加工が
不要となり容易に製作が可能である。The material of the metal base 101 is C
u plate, Mo plate and composite material, AL. SIC and the like can be mentioned, but in the case of a Cu plate or a Mo plate, this concave surface must be formed by machining or pressing, and the machining is difficult particularly in the case of a Mo plate because of its high hardness. For this reason, AL. SI
C and Cu. A material formed by casting such as SIC is desirable. If these materials are used, the concave portion is formed integrally with the metal base when the metal base is formed, so that machining is not required and the production can be easily performed.
【００２０】図３，図４は第２の実施例を示したもので
ある。図３中、図１と同一符号は同一要素を示す。図３
はその部分断面構造図、図４は金属ベースを上から見た
平面図である。本実施例では、金属ベース１０２の主面
上で絶縁基板３の周辺部に凸部１０２ａが形成されてい
る。この凸部１０２ａにより、絶縁基板３が固定され半
田接合時の絶縁基板３のずれや、半田流れを抑止でき良
好な接合を形成することができる。凸部１０２ａは金属
ベースの梁の効果もあり、金属ベース自体の剛性を増し
反りの抑制を図ることができる。またこの凸部１０２ａ
は、樹脂ケース１０の接着される周辺に形成されている
ため、この部分により接着剤１１のケース内部へのはみ
出しも抑止される。このため、従来構造で発生していた
接着剤１１のケース内部への接着剤１１のはみ出し形状
に起因して起こるゲルクラックも防止でき絶縁性も向上
できる。FIGS. 3 and 4 show a second embodiment. 3, the same symbols as those in FIG. 1 indicate the same elements. FIG.
Is a partial cross-sectional structural view, and FIG. 4 is a plan view of the metal base as viewed from above. In the present embodiment, a protrusion 102 a is formed on the main surface of the metal base 102 at the periphery of the insulating substrate 3. The convex portion 102a fixes the insulating substrate 3 and suppresses the displacement of the insulating substrate 3 at the time of solder bonding and the flow of solder, thereby forming a good bonding. The protruding portion 102a also has the effect of a metal-based beam, and can increase the rigidity of the metal base itself and suppress warpage. Also, this convex portion 102a
Is formed around the resin case 10 to which the resin case 10 is bonded, so that the adhesive 11 is prevented from protruding into the case. For this reason, gel cracks caused by the adhesive 11 protruding into the case inside the adhesive 11 which occur in the conventional structure can be prevented, and the insulation properties can be improved.
【００２１】図５，図６は第３の実施例を示したもので
ある。図５中、図１と同一符号は同一要素を示す。図５
はその部分断面構造図、図６は金属ベースを上から見た
平面図である。本実施例では、金属ベース１０３の主面
上で樹脂ケースが接着される金属ベース周辺部１０３ａ
部の厚みが他の面よりも厚くなっている。この103a部に
より金属ベース１０３に剛性を持たせ金属ベース１０３
の反りを抑制することができる。このため、樹脂ケース
１０と金属ベース１０３の良好な接着状態を施すことが
可能となる。FIGS. 5 and 6 show a third embodiment. 5, the same symbols as those in FIG. 1 indicate the same elements. FIG.
Is a partial cross-sectional structural view, and FIG. 6 is a plan view of the metal base as viewed from above. In this embodiment, a metal base peripheral portion 103a to which a resin case is bonded on the main surface of the metal base 103
The thickness of the part is thicker than other surfaces. The 103a portion gives the metal base 103 rigidity and makes the metal base 103
Warpage can be suppressed. For this reason, it is possible to provide a good adhesion state between the resin case 10 and the metal base 103.
【００２２】図７，図８，図９は第４の実施例を示した
ものである。図７中、図１と同一符号は同一要素を示
す。図７はその部分断面構造図、図８，図９は金属ベー
スを下から見た下面図である。本実施例では、金属ベー
ス１０４の反主面上に凸部104a及び１０４ｂが複数個形
成されている。金属ベースの反主面側は、モジュールが
取り付けられる冷却フィンなどとの接触面となる。本実
施例では、冷却フィン側にも同様の凹凸部分を形成した
フィンが必要となるが、この凹凸部により金属ベースの
冷却面積が拡大し熱放散が大幅に向上される。FIGS. 7, 8, and 9 show a fourth embodiment. 7, the same symbols as those in FIG. 1 indicate the same elements. FIG. 7 is a partial cross-sectional structural view, and FIGS. 8 and 9 are bottom views of the metal base viewed from below. In this embodiment, a plurality of convex portions 104a and 104b are formed on the opposite main surface of the metal base 104. The opposite main surface side of the metal base is a contact surface with a cooling fin or the like to which the module is attached. In the present embodiment, a fin having similar irregularities is required also on the cooling fin side, but the irregularities increase the cooling area of the metal base and greatly improve heat dissipation.
【００２３】上記実施例では、ＩＧＢＴモジュールを例
にして説明したがこれに限定されるものでは無く、他の
パワートランジスタ，ＧＴＯサイリスタ等でも良いこと
は勿論である。In the above embodiment, an IGBT module has been described as an example. However, the present invention is not limited to this, and it is a matter of course that another power transistor, a GTO thyristor, or the like may be used.
【００２４】[0024]
【発明の効果】本発明によれば、金属ベースに凹凸部を
形成することにより絶縁基板の接合の安定化及び、金属
ベースの反り抑制による樹脂ケースの密着安定化及び熱
放散に優れた高信頼性なパワー半導体モジュールを提供
できる。As described above, according to the present invention, the unevenness is formed on the metal base to stabilize the bonding of the insulating substrate, and the warp of the metal base is suppressed to stabilize the adhesion of the resin case and to provide excellent heat dissipation. Power semiconductor module can be provided.
【図１】本発明の第１の実施例を示す断面図。FIG. 1 is a sectional view showing a first embodiment of the present invention.
【図２】図１に示す本発明の平面図。FIG. 2 is a plan view of the present invention shown in FIG.
【図３】本発明の第２の実施例を示す断面図。FIG. 3 is a sectional view showing a second embodiment of the present invention.
【図４】図３に示す本発明の平面図。FIG. 4 is a plan view of the present invention shown in FIG. 3;
【図５】本発明の第３の実施例を示す断面図。FIG. 5 is a sectional view showing a third embodiment of the present invention.
【図６】図５に示す本発明の平面図。FIG. 6 is a plan view of the present invention shown in FIG. 5;
【図７】本発明の第４の実施例を示す断面図。FIG. 7 is a sectional view showing a fourth embodiment of the present invention.
【図８】図７に示す本発明の下面図。8 is a bottom view of the present invention shown in FIG.
【図９】図７に示す本発明の下面図。FIG. 9 is a bottom view of the present invention shown in FIG. 7;
【図１０】従来構造を示す断面図。FIG. 10 is a sectional view showing a conventional structure.
１，１０１，１０２，１０３，１０４…金属ベース、
２，５，７…半田、３…絶縁基板、４…ＩＧＢＴチッ
プ、６…ＡＬワイヤー、８，１２…銅リード、９…ゲ
ル、１０…樹脂ケース、１１…接着剤。1, 101, 102, 103, 104 ... metal base,
2, 5, 7 solder, 3 insulating board, 4 IGBT chip, 6 AL wire, 8, 12 copper lead, 9 gel, 10 resin case, 11 adhesive.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 齋藤 隆一 茨城県日立市大みか町七丁目１番１号 株 式会社日立製作所日立研究所内 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Ryuichi Saito, Inventor Hitachi, Ltd. Hitachi 1-1, Omika-cho, Ibaraki Pref.
Claims (5)
どの材質からなる放熱を兼ねた金属ベースと、この金属
ベースの主面上に複数個の半導体素子が接合された絶縁
基板が接合され、この半導体素子を外雰囲気より遮断す
るための樹脂ケースで覆われたパワー半導体モジュール
において前記金属ベースの主面上に、１つ以上の凹凸面
があることを特徴としたパワー半導体モジュール。1. A copper plate, an MO plate, a composite material or an AL. A metal base made of a material such as SIC and also serving as a heat radiator, and an insulating substrate on which a plurality of semiconductor elements are bonded on a main surface of the metal base. A resin case for shielding the semiconductor elements from the outside atmosphere. A power semiconductor module, wherein the power semiconductor module has at least one uneven surface on the main surface of the metal base.
て、前記金属ベースの主面上に、絶縁基板が接続される
面が他の面よりも凹部であることを特徴としたパワー半
導体モジュール。2. The power semiconductor module according to claim 1, wherein the surface to which the insulating substrate is connected is more concave than the other surface on the main surface of the metal base.
て、前記金属ベース主面上に凸部が前記絶縁基板周辺に
形成されたことを特徴としたパワー半導体モジュール。3. The power semiconductor module according to claim 1, wherein a protrusion is formed on the metal base main surface around the insulating substrate.
て、前記金属ベース主面上の樹脂ケース接着面の厚みが
他の面の厚みよりも厚くしたことを特徴としたパワー半
導体モジュール。4. The power semiconductor module according to claim 1, wherein the thickness of the resin case bonding surface on the main surface of the metal base is larger than the thickness of the other surface.
て、前記金属ベースの反主面上に複数個の凹凸部が形成
されたことを特徴としたパワー半導体モジュール。5. The power semiconductor module according to claim 1, wherein a plurality of uneven portions are formed on the opposite main surface of said metal base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1228898A JPH11214612A (en) | 1998-01-26 | 1998-01-26 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1228898A JPH11214612A (en) | 1998-01-26 | 1998-01-26 | Power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11214612A true JPH11214612A (en) | 1999-08-06 |
Family
ID=11801174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1228898A Pending JPH11214612A (en) | 1998-01-26 | 1998-01-26 | Power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11214612A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013098450A (en) * | 2011-11-04 | 2013-05-20 | Sumitomo Electric Ind Ltd | Semiconductor module and method of manufacturing semiconductor module |
| CN103137576A (en) * | 2011-11-30 | 2013-06-05 | 株式会社日立制作所 | Power semiconductor device |
| JP2015198227A (en) * | 2014-04-03 | 2015-11-09 | 富士電機株式会社 | semiconductor device |
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| WO2017090267A1 (en) * | 2015-11-27 | 2017-06-01 | 三菱電機株式会社 | Power semiconductor device |
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-
1998
- 1998-01-26 JP JP1228898A patent/JPH11214612A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013098450A (en) * | 2011-11-04 | 2013-05-20 | Sumitomo Electric Ind Ltd | Semiconductor module and method of manufacturing semiconductor module |
| CN103137576A (en) * | 2011-11-30 | 2013-06-05 | 株式会社日立制作所 | Power semiconductor device |
| EP2600399A2 (en) | 2011-11-30 | 2013-06-05 | Hitachi Ltd. | Power semiconductor device |
| JP2013115297A (en) * | 2011-11-30 | 2013-06-10 | Hitachi Ltd | Power semiconductor device |
| US9013877B2 (en) | 2011-11-30 | 2015-04-21 | Hitachi Power Semiconductor Device, Ltd. | Power semiconductor device |
| JP2015198227A (en) * | 2014-04-03 | 2015-11-09 | 富士電機株式会社 | semiconductor device |
| EP3166140A4 (en) * | 2014-07-04 | 2018-03-07 | Mitsubishi Materials Corporation | Substrate unit for power modules, and power module |
| WO2016016985A1 (en) * | 2014-07-31 | 2016-02-04 | 三菱電機株式会社 | Semiconductor device |
| WO2016103436A1 (en) * | 2014-12-26 | 2016-06-30 | 三菱電機株式会社 | Semiconductor module |
| JPWO2016103436A1 (en) * | 2014-12-26 | 2017-04-27 | 三菱電機株式会社 | Semiconductor module |
| CN107112316A (en) * | 2014-12-26 | 2017-08-29 | 三菱电机株式会社 | Semiconductor module |
| US10211122B2 (en) | 2014-12-26 | 2019-02-19 | Mitsubishi Electric Corporation | Semiconductor module including a case and base board |
| DE112014007285B4 (en) | 2014-12-26 | 2024-01-18 | Mitsubishi Electric Corporation | SEMICONDUCTOR MODULE |
| JP2016036048A (en) * | 2015-11-05 | 2016-03-17 | 住友電気工業株式会社 | Semiconductor module |
| WO2017090267A1 (en) * | 2015-11-27 | 2017-06-01 | 三菱電機株式会社 | Power semiconductor device |
| JPWO2017090267A1 (en) * | 2015-11-27 | 2018-08-30 | 三菱電機株式会社 | Power semiconductor device |
| DE112016007241T5 (en) | 2016-09-20 | 2019-07-04 | Mitsubishi Electric Corporation | Semiconductor device |
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| JP2020184561A (en) * | 2019-05-07 | 2020-11-12 | 住友電気工業株式会社 | Semiconductor device |
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