JPH11209898A - Plating anode - Google Patents
Plating anodeInfo
- Publication number
- JPH11209898A JPH11209898A JP2639798A JP2639798A JPH11209898A JP H11209898 A JPH11209898 A JP H11209898A JP 2639798 A JP2639798 A JP 2639798A JP 2639798 A JP2639798 A JP 2639798A JP H11209898 A JPH11209898 A JP H11209898A
- Authority
- JP
- Japan
- Prior art keywords
- anode electrode
- plating
- anode
- wafer
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はウエハ等のメッキ対
象物表面にメッキを行なう際に用いるメッキ用アノード
電極に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating anode electrode used for plating a surface of a plating object such as a wafer.
【０００２】[0002]
【従来の技術】従来、ウエハの表面に電解メッキを施す
ウエハのメッキ装置は、図２に示すように、メッキ槽１
０の電解メッキ液２０中に、ウエハ１００とアノード電
極３００とを、両者の対向面が平行になるように所定距
離離間して浸漬して構成されている。2. Description of the Related Art Conventionally, a wafer plating apparatus for electroplating a wafer surface has a plating tank 1 as shown in FIG.
The wafer 100 and the anode electrode 300 are immersed in the electroplating solution 20 at a predetermined distance from each other so that their opposing surfaces are parallel to each other.
【０００３】メッキ槽１０はその外周にオーバーフロー
槽１３を設け、メッキ槽１０とオーバーフロー槽１３間
をメッキ液循環ポンプ１５を取り付けた配管１７で接続
して構成されている。[0003] The plating tank 10 is provided with an overflow tank 13 on its outer periphery, and the plating tank 10 and the overflow tank 13 are connected by a pipe 17 to which a plating solution circulation pump 15 is attached.
【０００４】ウエハ１００は略円板状であって、その外
周をウエハ保持治具４０で保持することでその一方の表
面を電解メッキ液２０中に露出せしめるように構成され
ている。The wafer 100 has a substantially disk shape, and is configured so that one surface of the wafer 100 is exposed in the electrolytic plating solution 20 by holding the outer periphery of the wafer 100 with a wafer holding jig 40.
【０００５】アノード電極３００も前記ウエハ１００と
略同一寸法の円板状に形成されており、その外周をアノ
ードホルダ５０で保持することでその一方の表面を電解
メッキ液２０中に露出せしめるように構成されている。The anode electrode 300 is also formed in a disk shape having substantially the same dimensions as the wafer 100, and the outer periphery thereof is held by the anode holder 50 so that one surface thereof is exposed in the electrolytic plating solution 20. It is configured.
【０００６】そしてメッキ液循環ポンプ１５を駆動する
ことで電解メッキ液２０はメッキ槽１０内にその下部か
ら供給されて、オーバーフロー槽１３にオーバーフロー
し循環する。By driving the plating solution circulation pump 15, the electrolytic plating solution 20 is supplied into the plating tank 10 from below, and overflows and circulates in the overflow tank 13.
【０００７】同時にウエハ１００とアノード電極３００
間に通電を行なってウエハ１００表面にメッキを行な
う。At the same time, the wafer 100 and the anode electrode 300
The surface of the wafer 100 is plated by energizing during that time.
【０００８】[0008]
【発明が解決しようとする課題】ところで従来、アノー
ド電極３００としては、溶解性アノード電極或いは不溶
解性アノード電極の何れかが用いられてきた。しかしな
がらこれらアノード電極３００には以下のような問題点
があった。Conventionally, as the anode electrode 300, either a soluble anode electrode or an insoluble anode electrode has been used. However, these anode electrodes 300 have the following problems.
【０００９】アノード電極３００として溶解性アノー
ド電極を用いた場合は、これに通電してメッキを行なう
と、該アノード電極３００のウエハ１００に対向する側
の面が電解メッキ液２０に溶解し減耗していく。アノー
ド電極３００が減った状態でさらに通電を続ければ、つ
いにはアノード電極３００に貫通孔があく場合が生じ
る。そして貫通孔があいた状態のままさらに通電する
と、ウエハ１００とアノード電極３００間に正常な電場
が形成されないため、ウエハ１００の表面にメッキ膜が
均一に形成されなくなってしまう。When a soluble anode electrode is used as the anode electrode 300, when a current is applied to the anode electrode 300 and plating is performed, the surface of the anode electrode 300 facing the wafer 100 dissolves in the electrolytic plating solution 20 and wears away. To go. If energization is further continued in a state where the anode electrode 300 is reduced, a through hole may eventually be formed in the anode electrode 300. Then, when current is further applied while the through-hole is formed, a normal electric field is not formed between the wafer 100 and the anode electrode 300, so that a plating film is not formed uniformly on the surface of the wafer 100.
【００１０】一方アノード電極３００として不溶解性
アノード電極を用いた場合は、貫通孔が生じる恐れはな
いが、アノード電極３００が溶解しないので、電解メッ
キ液２０中の金属成分がメッキによって消耗していった
場合に、その分の金属成分を電解メッキ液２０中に供給
できず、このため頻繁に電解メッキ液の調整・交換が必
要になってしまう。On the other hand, when an insoluble anode electrode is used as the anode electrode 300, there is no possibility that a through hole is formed, but since the anode electrode 300 is not dissolved, metal components in the electrolytic plating solution 20 are consumed by plating. In such a case, the metal component cannot be supplied to the electrolytic plating solution 20, which requires frequent adjustment and replacement of the electrolytic plating solution.
【００１１】本発明は上述の点に鑑みてなされたもので
ありその目的は、アノード電極が溶解しても常に正常な
電場が形成でき、また電解メッキ液の調整・交換の頻度
を少なくできるメッキ用アノード電極を提供することに
ある。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has as its object the purpose of always forming a normal electric field even if the anode electrode is dissolved, and reducing the frequency of adjustment and replacement of the electrolytic plating solution. To provide an anode electrode for use.
【００１２】[0012]
【課題を解決するための手段】上記問題点を解決するた
め本発明は、電解メッキ液中に、メッキ対象物と、メッ
キ対象物から所定距離離間してメッキ対象物と対向する
ように設置されるアノード電極とを浸漬し、メッキ対象
物とアノード電極間に通電することでメッキ対象物表面
にメッキを行なうメッキ装置において、前記アノード電
極を、板状の溶解性アノード電極と不溶解性アノード電
極とを重ね合わせるとともに、メッキ対象物側に溶解性
アノード電極の露出面を対向せしめるように配置して構
成することとした。また前記不溶解性アノード電極は、
これを浸漬する電解メッキ液の成分金属からなる材料で
形成されていることが好適である。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides an electroplating solution in which an object to be plated is installed at a predetermined distance from the object to be plated and faces the object to be plated. In a plating apparatus in which an anode electrode is immersed and a current is passed between the plating object and the anode electrode, plating is performed on the surface of the plating object, the anode electrode is formed of a plate-shaped soluble anode electrode and an insoluble anode electrode. Are overlapped, and the exposed surface of the soluble anode electrode is arranged to face the plating object side. Further, the insoluble anode electrode,
It is preferable that it is formed of a material made of a component metal of an electrolytic plating solution into which the material is immersed.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて詳細に説明する。図１は本発明の一実施形態に
かかるアノード電極３０及びアノードホルダ５０の拡大
側断面概略図である。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is an enlarged schematic side sectional view of an anode 30 and an anode holder 50 according to an embodiment of the present invention.
【００１４】同図に示すように本実施形態にかかるアノ
ード電極３０は、前記ウエハ１００と略同一寸法の円板
状に形成された溶解性アノード電極３１及び不溶解性ア
ノード電極３３を重ね合わせるとともに、その外周をア
ノードホルダ５０で保持する際に溶解性アノード電極３
１の方を電解メッキ液２０中に露出せしめるようにして
構成されている。As shown in FIG. 1, an anode electrode 30 according to the present embodiment is formed by superposing a soluble anode electrode 31 and an insoluble anode electrode 33 which are formed in a disk shape having substantially the same dimensions as the wafer 100. When the outer periphery is held by the anode holder 50, the soluble anode electrode 3
1 is exposed in the electrolytic plating solution 20.
【００１５】そして該アノード電極３０は、図２に示す
電解メッキ液２０中に浸漬されるが、その際、ウエハ１
００面側に溶解性アノード電極３１の露出面が対向する
ように配置される。The anode electrode 30 is immersed in the electrolytic plating solution 20 shown in FIG.
The dissolvable anode electrode 31 is arranged so that the exposed surface faces the 00 surface.
【００１６】ここでこの実施形態として例えばウエハ１
００に半田メッキを施すこととする場合は、例えば溶解
性アノード電極３１としてスズと鉛の合金を用い、また
電解メッキ液２０も少なくともスズと鉛の成分金属を有
する液体で構成し、さらに不溶解性アノード電極３３と
して二酸化鉛を用いることとする。In this embodiment, for example, a wafer 1
When the solder plating is to be performed on the metal layer 00, for example, an alloy of tin and lead is used as the dissolvable anode electrode 31, and the electrolytic plating solution 20 is also composed of a liquid having at least a component metal of tin and lead. Lead oxide is used as the conductive anode electrode 33.
【００１７】そして図２に示すメッキ液循環ポンプ１５
を駆動するとともに、ウエハ１００とアノード電極３０
間に通電を行なうことによってアノード電極３０とウエ
ハ１００間に所望の電場を形成し、ウエハ１００表面に
メッキを行なう。The plating solution circulation pump 15 shown in FIG.
And the wafer 100 and the anode 30
A desired electric field is formed between the anode electrode 30 and the wafer 100 by applying a current between them, and the surface of the wafer 100 is plated.
【００１８】これによって溶解性アノード電極３１のウ
エハ１００に対向する側の面が電解メッキ液２０中に溶
解し減耗していく。そしてさらに通電を続けて行けばつ
いには溶解性アノード電極３１に貫通孔があく場合が生
じる。図３はその時の溶解性アノード電極３１を示す斜
視図である。As a result, the surface of the soluble anode electrode 31 on the side facing the wafer 100 is dissolved in the electrolytic plating solution 20 and depleted. If the current is further supplied, a through hole may eventually be formed in the soluble anode electrode 31. FIG. 3 is a perspective view showing the dissolvable anode electrode 31 at that time.
【００１９】しかしながら本発明の場合、図４に示すよ
うに、溶解性アノード電極３１に貫通孔があいても、背
後の不溶解性アノード電極３３は溶解性アノード電極３
１と等電位なので、ウエハ１００とアノード電極３０間
の電場は、溶解性アノード電極３１に貫通孔が形成され
る前とほとんど同じ電場の状態を維持できる。従ってウ
エハ１００の表面には常にメッキ膜が均一に形成される
ことになる。However, in the case of the present invention, as shown in FIG. 4, even if a through hole is formed in the soluble anode electrode 31, the insoluble anode electrode 33 on the
Since the electric potential is equal to 1, the electric field between the wafer 100 and the anode electrode 30 can maintain almost the same electric field state as before the through hole is formed in the soluble anode electrode 31. Therefore, a plating film is always formed uniformly on the surface of the wafer 100.
【００２０】ここで前記不溶解性アノード電極３３を、
これを浸漬する電解メッキ液２０の成分金属からなる材
料で形成しておけば、即ち上記実施形態のように電解メ
ッキ液２０の成分金属である鉛からなる材料で形成して
おけば、以下のように好適である。Here, the insoluble anode electrode 33 is
If it is formed of a material made of a component metal of the electrolytic plating solution 20 into which it is immersed, that is, if it is made of a material made of lead which is a component metal of the electrolytic plating solution 20 as in the above embodiment, the following It is suitable.
【００２１】即ち通常、不溶解性アノード電極３３とし
て用いられる二酸化鉛や金やチタンは全く溶解しない。
しかしながらこの材料に不純物などが混入している場合
等においては、微量ではあるが該金属が電解メッキ液２
０中に溶出する恐れがないとはいえない。そこで上記実
施形態のように不溶解性アノード電極３３を電解メッキ
液２０の成分金属からなる材料で形成しておけば、例え
不溶解性アノード電極３３を構成する金属が溶出したと
しても電解メッキ液２０の成分に不純物が混入すること
がなく、ウエハ１００に形成されるメッキ膜の純度を保
つことができる。即ち上記実施形態の場合は不溶解性ア
ノード電極３３から例え金属が溶出してもそれは鉛であ
り、何ら問題ない。That is, normally, lead dioxide, gold or titanium used as the insoluble anode electrode 33 does not dissolve at all.
However, when impurities or the like are mixed in this material, the metal is deposited in the electrolytic plating solution 2 in a small amount.
It cannot be said that there is no risk of elution in 0. Therefore, if the insoluble anode electrode 33 is formed of a material made of a component metal of the electrolytic plating solution 20 as in the above embodiment, even if the metal constituting the insoluble anode electrode 33 elutes, the electrolytic plating solution No impurities are mixed into the 20 components, and the purity of the plating film formed on the wafer 100 can be maintained. That is, in the case of the above embodiment, even if the metal is eluted from the insoluble anode electrode 33, it is lead and there is no problem at all.
【００２２】なおメッキを行なうのはウエハに限定され
ず他の種々のメッキ対象物であっても良い。またメッキ
対象物やアノード電極の形状は種々の変形が可能であ
る。It should be noted that the plating is not limited to the wafer, but may be other various plating objects. The shape of the plating object and the anode electrode can be variously modified.
【００２３】[0023]
【発明の効果】以上詳細に説明したように本発明によれ
ば溶解性アノード電極と不溶解性アノード電極を重ね合
わせ、溶解性アノード電極をメッキ対象物側に配置した
ので、たとえ溶解性アノード電極が減耗してその形状が
変わって孔などが形成されたとしても、不溶解性アノー
ド電極がメッキ対象物側に露出するので、常に正常な電
場が維持でき、メッキ対象物に常に均一なメッキ膜が形
成でき、メッキ膜厚を均一にできる。As described in detail above, according to the present invention, a soluble anode electrode and an insoluble anode electrode are overlapped and the soluble anode electrode is arranged on the side of the object to be plated. The insoluble anode electrode is exposed to the plating object side even if the hole is worn out and its shape changes, so that a normal electric field can always be maintained and the plating object is always uniform on the plating object. Can be formed, and the plating film thickness can be made uniform.
【００２４】また不溶解性アノード電極を、電解メッキ
液の成分金属からなる材料で形成した場合は、例え不溶
解性アノード電極を構成する金属が溶出したとしても電
解メッキ液の成分に不純物が混入することがなく、メッ
キ対象物に形成されるメッキ膜の純度を保つことができ
る。Further, when the insoluble anode electrode is formed of a material composed of a component metal of the electrolytic plating solution, even if the metal constituting the insoluble anode electrode elutes, impurities are mixed into the components of the electrolytic plating solution. Therefore, the purity of the plating film formed on the plating object can be maintained.
【図１】本発明の一実施形態にかかるアノード電極３０
の拡大側断面概略図である。FIG. 1 shows an anode 30 according to an embodiment of the present invention.
FIG.
【図２】ウエハのメッキ装置の全体概略図である。FIG. 2 is an overall schematic diagram of a wafer plating apparatus.
【図３】減耗した溶解性アノード電極３１を示す斜視図
である。FIG. 3 is a perspective view showing a depleted soluble anode electrode 31;
【図４】減耗した溶解性アノード電極３１を具備するア
ノード電極３０の拡大側断面概略図である。FIG. 4 is an enlarged side sectional schematic view of an anode electrode 30 having a worn-out soluble anode electrode 31;
１０ メッキ槽 ２０ 電解メッキ液 ３０ アノード電極 ３１ 溶解性アノード電極 ３３ 不溶解性アノード電極 ４０ ウエハ保持治具 ５０ アノードホルダ １００ ウエハ（メッキ対象物） DESCRIPTION OF SYMBOLS 10 Plating tank 20 Electrolytic plating liquid 30 Anode electrode 31 Soluble anode electrode 33 Insoluble anode electrode 40 Wafer holding jig 50 Anode holder 100 Wafer (object to be plated)
Claims (2)
ッキ対象物から所定距離離間してメッキ対象物と対向す
るように設置されるアノード電極とを浸漬し、メッキ対
象物とアノード電極間に通電することでメッキ対象物表
面にメッキを行なうメッキ装置において、 前記アノード電極は、板状の溶解性アノード電極と不溶
解性アノード電極とを重ね合わせるとともに、メッキ対
象物側に溶解性アノード電極の露出面を対向せしめるよ
うに配置して構成されていることを特徴とするメッキ用
アノード電極。1. An object to be plated and an anode electrode provided to be spaced apart from the object by a predetermined distance so as to face the object to be plated are immersed in an electrolytic plating solution, and the distance between the object to be plated and the anode electrode is reduced. A plating apparatus that performs plating on the surface of an object to be plated by energizing the plate, wherein the anode electrode overlaps a plate-shaped soluble anode electrode and an insoluble anode electrode and forms a soluble anode electrode on the side of the object to be plated. An anode electrode for plating, wherein the anode surface is arranged so that the exposed surfaces of the electrodes face each other.
漬する電解メッキ液の成分金属からなる材料で形成され
ていることを特徴とする請求項１記載のメッキ用アノー
ド電極。2. The plating anode electrode according to claim 1, wherein the insoluble anode electrode is formed of a material composed of a component metal of an electrolytic plating solution into which the insoluble anode electrode is immersed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2639798A JPH11209898A (en) | 1998-01-23 | 1998-01-23 | Plating anode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2639798A JPH11209898A (en) | 1998-01-23 | 1998-01-23 | Plating anode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11209898A true JPH11209898A (en) | 1999-08-03 |
Family
ID=12192431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2639798A Pending JPH11209898A (en) | 1998-01-23 | 1998-01-23 | Plating anode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11209898A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008057011A (en) * | 2006-08-31 | 2008-03-13 | National Univ Corp Shizuoka Univ | Apparatus and method for depositing film |
| JP2008202065A (en) * | 2007-02-16 | 2008-09-04 | Mitsubishi Materials Corp | Anode electrode attachment structure for electroplating |
| JP2010185122A (en) * | 2009-02-13 | 2010-08-26 | Ebara Corp | Member for passing electric current to anode holder, and anode holder |
| JP2012107343A (en) * | 2007-08-20 | 2012-06-07 | Ebara Corp | Anode holder, and plating apparatus |
| JP2014185371A (en) * | 2013-03-25 | 2014-10-02 | Toyota Motor Corp | Film formation apparatus for metal film and film formation method |
| WO2015050192A1 (en) * | 2013-10-03 | 2015-04-09 | トヨタ自動車株式会社 | Nickel solution for forming film and film-forming method using same |
-
1998
- 1998-01-23 JP JP2639798A patent/JPH11209898A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008057011A (en) * | 2006-08-31 | 2008-03-13 | National Univ Corp Shizuoka Univ | Apparatus and method for depositing film |
| JP2008202065A (en) * | 2007-02-16 | 2008-09-04 | Mitsubishi Materials Corp | Anode electrode attachment structure for electroplating |
| JP2012107343A (en) * | 2007-08-20 | 2012-06-07 | Ebara Corp | Anode holder, and plating apparatus |
| JP2010185122A (en) * | 2009-02-13 | 2010-08-26 | Ebara Corp | Member for passing electric current to anode holder, and anode holder |
| JP2014185371A (en) * | 2013-03-25 | 2014-10-02 | Toyota Motor Corp | Film formation apparatus for metal film and film formation method |
| WO2014156310A1 (en) * | 2013-03-25 | 2014-10-02 | トヨタ自動車株式会社 | Apparatus and method for forming metal coating film film |
| CN105102691A (en) * | 2013-03-25 | 2015-11-25 | 丰田自动车株式会社 | Film formation apparatus for metal film and film formation method |
| EP2980281A4 (en) * | 2013-03-25 | 2016-02-03 | Toyota Motor Co Ltd | Apparatus and method for forming metal coating film |
| US20160076162A1 (en) * | 2013-03-25 | 2016-03-17 | Toyota Jidosha Kabushiki Kaisha | Film formation apparatus and film formation method for forming metal film |
| US9677185B2 (en) * | 2013-03-25 | 2017-06-13 | Toyota Jidosha Kabushiki Kaisha | Film formation apparatus and film formation method for forming metal film |
| WO2015050192A1 (en) * | 2013-10-03 | 2015-04-09 | トヨタ自動車株式会社 | Nickel solution for forming film and film-forming method using same |
| JP2015092012A (en) * | 2013-10-03 | 2015-05-14 | トヨタ自動車株式会社 | Nickel solution for film formation and film formation method using the same |
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