JPH11190774A - X-ray image pick-up device - Google Patents
X-ray image pick-up deviceInfo
- Publication number
- JPH11190774A JPH11190774A JP9360675A JP36067597A JPH11190774A JP H11190774 A JPH11190774 A JP H11190774A JP 9360675 A JP9360675 A JP 9360675A JP 36067597 A JP36067597 A JP 36067597A JP H11190774 A JPH11190774 A JP H11190774A
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- charge
- ray
- semiconductor layer
- signal
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- Solid State Image Pick-Up Elements (AREA)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｘ線撮像装置に関す
る。特に被検体へのＸ線照射量を少なくするためのＸ線
診断装置に用いられ、また、同種の目的で工業用非破壊
検査装置にも用いられるＸ線撮像装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray imaging apparatus. In particular, the present invention relates to an X-ray imaging apparatus used for an X-ray diagnostic apparatus for reducing the amount of X-ray irradiation to a subject, and also used for an industrial non-destructive inspection apparatus for the same purpose.
【０００２】[0002]
【従来技術】従来の光／Ｘ線に感知するセンサは、図７
に示すようにマトリックスを構成する各素子に分かれた
電極７２と、素子に共通な半導体層７３、及び、共通な
電極７４を設け、半導体層に入射した光／Ｘ線を電荷に
変換して記憶容量７５に蓄積し、スイッチング素子７６
の駆動により読み出すというものである。また、一搬の
放射線センサも半導体層で生成される電荷をマトリック
ス状に読み出すという点では、上記センサと同様であ
る。2. Description of the Related Art A conventional light / X-ray sensor is shown in FIG.
As shown in the figure, an electrode 72 divided into each element constituting a matrix, a semiconductor layer 73 common to the elements, and a common electrode 74 are provided, and the light / X-rays incident on the semiconductor layer are converted into electric charges and stored. Stored in the capacitor 75, the switching element 76
Is read out by the drive of. Further, the portable radiation sensor is similar to the above-described sensor in that the charge generated in the semiconductor layer is read out in a matrix.
【０００３】一方、Ｘ線診断のいわゆるレントゲン撮影
装置においては、Ｘ線フィルムの前面・後面あるいは近
傍に、微小なＸ線センサを設け、このＸ線センサの信号
により、Ｘ線を発生した後、適切なＸ線量を感知した時
にＸ線の発生を中止するようにＸ線発生器を制御してい
る。これは一般にフォトタイマと呼ばれている。On the other hand, in a so-called X-ray diagnostic apparatus for X-ray diagnosis, a minute X-ray sensor is provided on the front surface, the rear surface, or near the X-ray film. The X-ray generator is controlled so that the generation of X-rays is stopped when an appropriate X-ray dose is sensed. This is generally called a phototimer.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これら
の検出器は照射され被検体を透過したＸ線についてその
画像を得ようとするだけであり、必要最小限なＸ線量を
照射するという観点はない。すなわち、Ｘ線画像は入射
するＸ線量によりその画質が影響され、一般にＸ線量が
減少すると、Ｘ線のゆらぎがフォトンノイズとなってあ
らわれ、これが画質に影響する。十分なＸ線量を照射す
るとフォトンノイズは減少するものの、被検体の被曝は
大きくなるという問題がある。特に診断用途で用いられ
る装置は、被検体への被曝を必要最小限にする必要があ
る。However, these detectors merely attempt to obtain an image of X-rays that have been radiated and transmitted through the subject, and there is no viewpoint of irradiating the required minimum amount of X-rays. . That is, the image quality of the X-ray image is affected by the incident X-ray dose. Generally, when the X-ray dose decreases, the fluctuation of the X-ray appears as photon noise, which affects the image quality. Irradiation with a sufficient X-ray dose reduces photon noise but increases the exposure of the subject. In particular, devices used for diagnostic purposes need to minimize exposure to the subject.
【０００５】本発明は上記課題を解決するために創案さ
れたもので、良好な画質のＸ線画像を得ることができる
とともに、被検体への被曝を最小限にすることができる
Ｘ線撮像装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and provides an X-ray imaging apparatus capable of obtaining an X-ray image of good image quality and minimizing exposure to a subject. Is to provide.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明のＸ線撮像装置は、Ｘ線のエネルギーを電荷
に変換する半導体層、またはＸ線のエネルギーを光に変
換するシンチレータとシンチレータからの光を電荷に変
換する半導体層と、前記半導体層の片面に設けられた第
１の電極と、第１の電極とは反対の面に設けられるマト
リックス状の第２の電極と、前記第２の電極とつなが
り、かつ、基板上にマトリックス状に設けられたスイッ
チング素子と、前記第１の電極に流れる電流を積算しそ
の積算量（電荷量）が、規定値に達した時に信号を発す
る制御手段とを設けたことを特徴としている。In order to achieve the above object, an X-ray imaging apparatus according to the present invention comprises a semiconductor layer for converting X-ray energy into electric charge, or a scintillator for converting X-ray energy into light. A semiconductor layer for converting light from the scintillator into electric charges, a first electrode provided on one surface of the semiconductor layer, a matrix-like second electrode provided on a surface opposite to the first electrode, A switching element connected to the second electrode and provided in a matrix on the substrate and a current flowing through the first electrode are integrated, and a signal is output when the integrated amount (charge amount) reaches a specified value. And a control means for issuing the signal.
【０００７】Ｘ線発生器により発せられるＸ線は被検体
を透過し、本撮像装置に入射する。Ｘ線は第１の電極を
透過し、その大部分が半導体層で吸収されＸ線エネルギ
ーは電荷（電子−正孔対）を作る。[0007] X-rays generated by the X-ray generator penetrate the subject and enter the imaging apparatus. X-rays penetrate the first electrode, most of which is absorbed by the semiconductor layer, and the X-ray energy creates charges (electron-hole pairs).
【０００８】あるいは、Ｘ線はシンチレータにより吸収
され蛍光を発し、その蛍光によりフォトダイオードのよ
うな半導体層により電荷を作る。Alternatively, the X-rays are absorbed by the scintillator and emit fluorescence, and the fluorescence generates charges by a semiconductor layer such as a photodiode.
【０００９】この電荷を第２の電極およびスイッチング
素子により順次走査し読み出すことでＸ線２次元画像を
得るとともに、第１の電極に流れる電荷量が規定値に達
した場合に信号を出力し、Ｘ線発生装置等に伝達してＸ
線の発生を中止させる。This charge is sequentially scanned and read by the second electrode and the switching element to obtain an X-ray two-dimensional image, and a signal is output when the amount of charge flowing to the first electrode reaches a specified value. Transmit to X-ray generator etc.
Stops line generation.
【００１０】[0010]
【実施例】本発明の実施例を図１、図２に基づいて説明
する。図１は本発明にかかるＸ線撮像装置の概要図であ
るが、マトリックスに共通な層である半導体層２及び第
１の電極１は図示していない。図２は断面から見た説明
図である。図２において上部から入射したＸ線は第１の
電極１を透過して半導体層２で吸収され、電子−正孔対
を作り電荷を生成する。生成された電荷は、半導体層２
に印加される電圧により電子と正孔はそれぞれ反対の電
極に引き寄せられ、この電荷が各キャパシタ４に蓄積さ
れる。印加する電圧は図のように第１の電極１に直流電
圧源１２によって正の電圧を印加する場合と、逆に負の
電圧を印加する場合があり、半導体層内の電子・正孔そ
れぞれの寿命や移動度で決まる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic diagram of an X-ray imaging apparatus according to the present invention, but does not show a semiconductor layer 2 and a first electrode 1 which are layers common to a matrix. FIG. 2 is an explanatory diagram viewed from a cross section. In FIG. 2, X-rays incident from above are transmitted through the first electrode 1 and absorbed by the semiconductor layer 2 to form electron-hole pairs and generate electric charges. The generated charge is applied to the semiconductor layer 2
The electrons and holes are attracted to the respective opposite electrodes by the voltage applied to the capacitor, and this charge is accumulated in each capacitor 4. The voltage to be applied may be a case where a positive voltage is applied to the first electrode 1 by the DC voltage source 12 as shown in the drawing, or a case where a negative voltage is applied to the first electrode 1. Determined by lifetime and mobility.
【００１１】信号の読み出しは、第２の電極３とキャパ
シタ４に接続され、マトリックス状に並んだスイッチン
グ素子５を順次駆動することにより、１ライン分ずつの
蓄積電荷がそれぞれ読み出しラインを通って増幅器９に
入り、マルチプレクサ１０を通ってＡ／Ｄ変換器１１で
Ａ／Ｄ変換される。The signal is read out by sequentially driving the switching elements 5 connected to the second electrode 3 and the capacitor 4 and arranged in a matrix. 9, passes through a multiplexer 10 and is A / D converted by an A / D converter 11.
【００１２】ところで、第１の電極に流れる電流を測定
・積算し、電荷量を検出する検出手段６を設ける。この
検出手段は計測分野においてよく知られており、特に計
測用オペアンプを用いるものが一般的であるが、これに
限るものではない。この出力を、コンパレータ回路８に
入力し、一方、規定値（閾値）を設定する回路７からの
信号と比較することにより、この第１の電極に流れる電
荷量が規定値に達した場合に信号をコンパレータ回路８
から出力する。By the way, a detecting means 6 for measuring and integrating the current flowing through the first electrode and detecting the amount of electric charge is provided. This detecting means is well known in the field of measurement, and generally employs an operational amplifier for measurement, but is not limited to this. This output is input to a comparator circuit 8, and is compared with a signal from a circuit 7 for setting a specified value (threshold). When the amount of charge flowing through the first electrode reaches a specified value, a signal To the comparator circuit 8
Output from
【００１３】本発明の製造方法について説明する。The manufacturing method of the present invention will be described.
【００１４】液晶ディスプレイなどの家電製品に用いら
れている薄膜技術により、基板上にマトリックス状に設
けられたスイッチング素子と第２の電極が作製される。
この技術により、各素子ごとに分かれたＴＦＴやＭＩＭ
構造のスイッチング素子と、このスイッチング素子につ
ながった第２の電極（これも各素子ごとに分割されてい
る）と、スイッチング素子を駆動する駆動ライン（例え
ば列方向）と、スイッチング素子を通って電荷が流れる
データライン（例えば行方向）が作られている。一般に
は、スイッチング素子はアモルファスシリコンやポリシ
リコンで作製され、絶縁物には窒化膜、酸化膜、ポリイ
ミドなどの化学材料、金属材料には、クロム・タンタル
・アルミ・銅など種々の材料がすでに使用されている。A switching element and a second electrode provided in a matrix on a substrate are manufactured by a thin film technique used for home electric appliances such as a liquid crystal display.
With this technology, TFTs and MIMs divided for each element
A switching element having a structure, a second electrode connected to the switching element (also divided for each element), a drive line for driving the switching element (for example, in a column direction), and a charge passing through the switching element. Are formed (for example, in the row direction). Generally, switching elements are made of amorphous silicon or polysilicon, and various materials such as chromium, tantalum, aluminum, and copper are already used for insulating materials such as nitride, oxide, and polyimide. Have been.
【００１５】第２電極の上には半導体層が、センサ全体
にわたって設けられる。この層はひとつの連続層であっ
ても良いし、マトリックス状・マトリックスをいくつか
合わせた複数に分割された層などいくつかに分割されて
いても良い。この材料は、セレンなどのカルコゲナイド
系材料を蒸着により成膜したり、シリコンやテルル化カ
ドミウム合金をＣＶＤで作ることが可能である。十分に
Ｘ線を吸収するにはこれらの半導体層の厚みは厚い程良
く、シリコンのように密度の低いものでは１〜５ｍｍ、
セレンでは３００〜１０００μｍ、テルル化カドミウム
合金では１００〜３００μｍである。On the second electrode, a semiconductor layer is provided over the entire sensor. This layer may be a single continuous layer, or may be divided into a plurality of layers, such as a matrix and a plurality of layers obtained by combining several matrices. As this material, a chalcogenide-based material such as selenium can be formed into a film by vapor deposition, or silicon or a cadmium telluride alloy can be formed by CVD. In order to absorb X-rays sufficiently, the thickness of these semiconductor layers is preferably as large as possible.
It is 300 to 1000 μm for selenium, and 100 to 300 μm for cadmium telluride alloy.
【００１６】Ｘ線をシンチレータにより蛍光に変換した
後電荷に変える場合には、Ｘ線の大部分をシンチレータ
で吸収される。例えばタリウムやナトリウムをドープし
たヨウ化セシウムのシンチレータではその厚みは３００
〜７００μｍであり、タングステン酸カドミウムでは２
００〜５００μｍが望ましい。シンチレータにはこの他
種々の材料が知られている。When X-rays are converted into electric charges after being converted into fluorescent light by the scintillator, most of the X-rays are absorbed by the scintillator. For example, a scintillator of cesium iodide doped with thallium or sodium has a thickness of 300
７００700 μm, 2 for cadmium tungstate.
It is preferably from 00 to 500 µm. Various other materials are known for scintillators.
【００１７】さらに、半導体層の上に、第１の電極を設
ける。この材料には、入射線が光の場合はＩＴＯ（イン
ジウム・錫・オキサイド）がもっとも有名であるが、Ｘ
線の場合にはＸ線の透過力が高いため、種々の薄膜の金
属層や合金層でもよい。Further, a first electrode is provided on the semiconductor layer. For this material, ITO (indium tin oxide) is most famous when the incident light is light.
In the case of a wire, since the X-ray penetrating power is high, a metal layer or an alloy layer of various thin films may be used.
【００１８】第１の電極１は、いくつかの部分に分かれ
ており、その例を図３から図５に示す。図３は第１の電
極が分割されていない例であり、図４、図５は第１の電
極１を適当な形状に分割した例である。The first electrode 1 is divided into several parts, examples of which are shown in FIGS. FIG. 3 shows an example in which the first electrode is not divided, and FIGS. 4 and 5 show examples in which the first electrode 1 is divided into an appropriate shape.
【００１９】図６は、図４や図５のように第１の電極が
分割されている場合のＸ線撮像装置の構成例であり、所
望の形状に第１の電極を分割しそれぞれの電極の電荷量
によりコンパレータ回路２１から信号を出力するもので
ある。これには、各々の分割された電極ごとに電荷量を
検出する検出手段２２を設けて電荷量を検出してそれぞ
れコンパレータ回路２１に入力したり、また分割された
複数の電極をいくつかにまとめて検出する方法がある。FIG. 6 shows an example of the configuration of an X-ray imaging apparatus in which the first electrode is divided as shown in FIGS. 4 and 5, and the first electrode is divided into a desired shape and each electrode is divided. A signal is output from the comparator circuit 21 in accordance with the amount of charge. For this purpose, a detecting means 22 for detecting the amount of electric charge is provided for each of the divided electrodes, and the amount of electric charge is detected and input to the comparator circuit 21, respectively. There is a method to detect.
【００２０】また、電荷量を検出する検出手段の数に対
応して、複数の設定値を規定値（閾値）の設定回路２３
でもち、それぞれについて比較することや信号をＡ／Ｄ
変換回路でデジタル信号として扱うこともできる。A plurality of set values are set in accordance with the number of the detecting means for detecting the charge amount.
However, comparing each signal and A / D
It can be handled as a digital signal by the conversion circuit.
【００２１】この信号をＸ線発生装置の動作を中止する
信号として、Ｘ線管球や高電圧発生装置等で構成される
Ｘ線発生装置に伝達し、Ｘ線の発生を中止すれば被曝を
少なくしつつ、良好なＸ線画像を得ることができる。This signal is transmitted as a signal for stopping the operation of the X-ray generator to an X-ray generator comprising an X-ray tube, a high-voltage generator, and the like. A good X-ray image can be obtained while reducing the amount.
【００２２】通常のＸ線発生装置は、Ｘ線のオン・オフ
信号をその内部に持っているため、この信号と上の信号
を重ね合わす簡単な論理回路により、容易にＸ線の停止
を実現できる。Since an ordinary X-ray generator has an X-ray on / off signal therein, the X-ray can be easily stopped by a simple logic circuit which superimposes this signal and the above signal. it can.
【００２３】[0023]
【発明の効果】本発明にかかるＸ線撮像装置によれば、
被検体を透過したＸ線強度を測定しながら、Ｘ線の発生
を制御できるため、適切なＸ線量に達したときにＸ線発
生を中止できるので、被検体への被曝を最小限にでき、
かつ、良好な画質のＸ線画像を得ることができる。また
装置の操作者は、Ｘ線発生装置の条件設定が簡便にな
る。According to the X-ray imaging apparatus of the present invention,
Since the generation of X-rays can be controlled while measuring the X-ray intensity transmitted through the subject, X-ray generation can be stopped when an appropriate X-ray dose is reached, so that exposure to the subject can be minimized,
In addition, an X-ray image with good image quality can be obtained. Further, the operator of the apparatus can easily set the conditions of the X-ray generator.
【図１】本発明にかかるＸ線撮像装置の概略構成を示す
図である。FIG. 1 is a diagram showing a schematic configuration of an X-ray imaging apparatus according to the present invention.
【図２】本発明にかかるＸ線撮像装置の断面を示す図で
ある。FIG. 2 is a diagram showing a cross section of the X-ray imaging apparatus according to the present invention.
【図３】本発明のＸ線撮像装置の第１の電極の一実施例
を示す図である。FIG. 3 is a diagram showing one embodiment of a first electrode of the X-ray imaging apparatus of the present invention.
【図４】本発明のＸ線撮像装置の第１の電極の一実施例
を示す図である。FIG. 4 is a diagram showing one embodiment of a first electrode of the X-ray imaging apparatus of the present invention.
【図５】本発明のＸ線撮像装置の第１の電極の一実施例
を示す図である。FIG. 5 is a diagram showing one embodiment of a first electrode of the X-ray imaging apparatus of the present invention.
【図６】本発明のＸ線撮像装置の変形実施例を示す図で
ある。FIG. 6 is a diagram showing a modified embodiment of the X-ray imaging apparatus of the present invention.
【図７】従来のＸ線撮像装置の構成を示す図である。FIG. 7 is a diagram illustrating a configuration of a conventional X-ray imaging apparatus.
１ 第１の電極 ２ 半導体層 ３ 第２の電極 ４ キャパシタ ５ スイッチング素子 ６ 電荷量を検出する検出手段 ７ 規定値（閾値）を設定する回路 ８ コンパレータ回路 ９ 増幅器 １０ マルチプレクサ １１ Ａ／Ｄ変換器 １２ 直流電圧源 ２１ コンパレータ回路 ２２ 規定値（閾値）を設定する回路 ２３ 電荷量を検出する検出手段 ７２ 電極 ７３ 半導体層 ７４ 共通電極 ７５ 記憶容量 ７６ スイッチング素子 REFERENCE SIGNS LIST 1 first electrode 2 semiconductor layer 3 second electrode 4 capacitor 5 switching element 6 detecting means for detecting charge amount 7 circuit for setting prescribed value (threshold) 8 comparator circuit 9 amplifier 10 multiplexer 11 A / D converter 12 DC voltage source 21 Comparator circuit 22 Circuit for setting prescribed value (threshold) 23 Detecting means for detecting charge amount 72 Electrode 73 Semiconductor layer 74 Common electrode 75 Storage capacity 76 Switching element
Claims (1)
体層、またはＸ線のエネルギーを光に変換するシンチレ
ータとシンチレータからの光を電荷に変換する半導体層
と、前記半導体層の片面に設けられた第１の電極と、第
１の電極とは反対の面に設けられるマトリックス状の第
２の電極と、前記第２の電極とつながり、かつ、基板上
にマトリックス状に設けられたスイッチング素子と、前
記第１の電極に流れる電流を積算しその積算量（電荷
量）が、規定値に達した時に信号を発する制御手段とを
設けたことを特徴とするＸ線撮像装置。1. A semiconductor layer for converting X-ray energy to electric charge, a scintillator for converting X-ray energy to light, and a semiconductor layer for converting light from the scintillator to electric charge, provided on one surface of the semiconductor layer. A first electrode, a matrix-shaped second electrode provided on a surface opposite to the first electrode, and a switching element connected to the second electrode and provided in a matrix on the substrate. An X-ray imaging apparatus, further comprising control means for integrating a current flowing through the first electrode and generating a signal when the integrated amount (charge amount) reaches a specified value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36067597A JP3707924B2 (en) | 1997-12-26 | 1997-12-26 | X-ray imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36067597A JP3707924B2 (en) | 1997-12-26 | 1997-12-26 | X-ray imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11190774A true JPH11190774A (en) | 1999-07-13 |
| JP3707924B2 JP3707924B2 (en) | 2005-10-19 |
Family
ID=18470434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36067597A Expired - Fee Related JP3707924B2 (en) | 1997-12-26 | 1997-12-26 | X-ray imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3707924B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7956433B2 (en) | 2006-12-20 | 2011-06-07 | Fujifilm Corporation | Image detector and radiation detecting system with separation of metal layers for bias, scan and data lines |
-
1997
- 1997-12-26 JP JP36067597A patent/JP3707924B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7956433B2 (en) | 2006-12-20 | 2011-06-07 | Fujifilm Corporation | Image detector and radiation detecting system with separation of metal layers for bias, scan and data lines |
| EP2696367A2 (en) | 2006-12-20 | 2014-02-12 | Fujifilm Corporation | Image detector and radiation detecting system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3707924B2 (en) | 2005-10-19 |
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