JPH11176787A - Sheet substrate processing system - Google Patents
Sheet substrate processing systemInfo
- Publication number
- JPH11176787A JPH11176787A JP34522997A JP34522997A JPH11176787A JP H11176787 A JPH11176787 A JP H11176787A JP 34522997 A JP34522997 A JP 34522997A JP 34522997 A JP34522997 A JP 34522997A JP H11176787 A JPH11176787 A JP H11176787A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing liquid
- processing
- partition
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Coating Apparatus (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、枚葉式基板処理装
置に関し、より特定的には、基板（半導体ウエハ、液晶
表示装置用のガラス基板、フォトマスク用のガラス基
板、光ディスク用の基板等）の表面および裏面に、処理
液（薬液、純水等）をそれぞれ供給して任意の処理を行
う枚葉式基板処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer substrate processing apparatus, and more particularly, to a substrate (semiconductor wafer, glass substrate for a liquid crystal display, glass substrate for a photomask, substrate for an optical disk, etc.). The present invention relates to a single-wafer-type substrate processing apparatus that performs an arbitrary process by supplying a processing liquid (chemical solution, pure water, etc.) to the front and back surfaces of the substrate processing device.
【０００２】[0002]
【従来の技術】従来から、処理液を用いて基板の表面お
よび裏面の処理（エッチング、洗浄、フォトレジストの
塗布、現像等）を行う装置として、枚葉式基板処理装置
が存在する。この枚葉式基板処理装置とは、回転する基
板の表面および裏面に処理液をそれぞれ供給して、処理
を行う装置である。2. Description of the Related Art Conventionally, a single-wafer substrate processing apparatus has been used as an apparatus for performing processing (etching, cleaning, photoresist coating, developing, etc.) on the front and back surfaces of a substrate using a processing liquid. The single-wafer substrate processing apparatus is an apparatus that performs processing by supplying a processing liquid to the front and back surfaces of a rotating substrate, respectively.
【０００３】以下、図６〜図８を用いて、従来の枚葉式
基板処理装置の一例を説明する。図６は、従来の枚葉式
基板処理装置の縦断面図である。図７は、図６における
Ｅ方向矢視図である。図８は、図７におけるＦ方向矢視
図である。Hereinafter, an example of a conventional single-wafer substrate processing apparatus will be described with reference to FIGS. FIG. 6 is a longitudinal sectional view of a conventional single wafer processing apparatus. FIG. 7 is a view in the direction of arrow E in FIG. FIG. 8 is a view in the direction of arrow F in FIG.
【０００４】図６において、従来の枚葉式基板処理装置
は、スピンベース２と、表面用処理液供給ノズル３０
と、スプラッシュガード６０とを備える。表面用処理液
供給ノズル３０は、処理液供給口３ａから基板表面１ａ
用の処理液を供給する。スピンベース２は、処理液供給
口２ａから基板裏面１ｂ用の処理液を供給する。また、
スピンベース２は、４箇所の基板装着台２１と４つの爪
２２とを備え、基板１を保持する。さらに、スピンベー
ス２は、図示しないモータによってベルトドライブやギ
アドライブ等の方法により、処理液供給口２ａを中心に
高速回転を行う。スプラッシュガード６０は、処理後の
廃液の回収経路を構成する。In FIG. 6, a conventional single-wafer substrate processing apparatus includes a spin base 2 and a surface processing liquid supply nozzle 30.
And a splash guard 60. The surface processing liquid supply nozzle 30 is connected to the substrate surface 1a from the processing liquid supply port 3a.
Supply the processing solution. The spin base 2 supplies the processing liquid for the substrate back surface 1b from the processing liquid supply port 2a. Also,
The spin base 2 includes four substrate mounting tables 21 and four claws 22 and holds the substrate 1. Further, the spin base 2 rotates at high speed around the processing liquid supply port 2a by a method such as a belt drive or a gear drive by a motor (not shown). The splash guard 60 constitutes a recovery path for the waste liquid after the treatment.
【０００５】図７において、基板１は、スピンベース２
の４箇所の基板装着台２１に載置され、４つの爪２２に
より保持される。この基板１の保持は、図８に示すよう
に、回転軸２３を中心に回動可能な爪２２を、基板１側
に回動して行う。In FIG. 7, a substrate 1 comprises a spin base 2
And is held by four claws 22. As shown in FIG. 8, the holding of the substrate 1 is performed by rotating the claw 22 rotatable about the rotation shaft 23 toward the substrate 1.
【０００６】基板表面１ａの処理は、処理液供給口３ａ
から供給される処理液を用いて行い、基板裏面１ｂの処
理は、処理液供給口２ａから供給される処理液を用いて
行い、処理が終わった廃液はスプラッシュガード６０に
よって回収される。この基板表面１ａおよび基板裏面１
ｂの処理は、双方同時に行われる（純水リンスで洗浄す
る等）場合もあれば、処理工程により基板表面１ａまた
は基板裏面１ｂのどちらか一方だけ行われる（エッチン
グを行う等）場合もある。The processing of the substrate surface 1a is performed by a processing liquid supply port 3a.
The processing of the substrate back surface 1b is performed using the processing liquid supplied from the processing liquid supply port 2a, and the waste liquid after the processing is collected by the splash guard 60. The substrate front surface 1a and the substrate back surface 1
The processing of b may be performed simultaneously (such as by rinsing with pure water), or may be performed only on one of the substrate front surface 1a and the substrate back surface 1b (such as by performing etching) depending on the processing step.
【０００７】[0007]
【発明が解決しようとする課題】上記のように、従来の
枚葉式基板処理装置は、４箇所の基板装着台２１におい
て基板１を固定しているため、基板表面１ａのみの処理
を行う際には、図９に示すように、処理液が基板１の回
転により発生する複雑な気流により裏面中心方向へ吸い
込まれたり（同図矢印ｇ）、処理液がスプラッシュガー
ド６０の内壁で跳ね返ったりして（同図矢印ｈ）、基板
裏面１ｂにまで回り込んでしまう。As described above, the conventional single-wafer type substrate processing apparatus fixes the substrate 1 on the four substrate mounting tables 21, so that only the substrate surface 1a is processed. As shown in FIG. 9, the processing liquid is sucked toward the center of the rear surface by a complicated airflow generated by the rotation of the substrate 1 (arrow g in FIG. 9), or the processing liquid rebounds on the inner wall of the splash guard 60. (Arrow h in the same figure), it reaches the substrate back surface 1b.
【０００８】このように、基板裏面１ｂにまで基板表面
１ａ用の処理液が回ってしまうと、例えば、エッチング
の場合では、基板裏面１ｂに不必要なエッチング処理が
施されるという問題が発生する。この問題の対処方法と
して、基板裏面１ｂの処理液供給口２ａから純水リンス
を同時に供給するという方法が考えられるが、純水の過
大な消費や基板裏面１ｂのエッチングを完全には防げな
い等のさらなる問題が生じ、好ましくない。As described above, if the processing solution for the substrate front surface 1a reaches the substrate back surface 1b, for example, in the case of etching, there occurs a problem that unnecessary etching processing is performed on the substrate rear surface 1b. . To cope with this problem, a method of simultaneously supplying pure water rinse from the processing liquid supply port 2a of the substrate back surface 1b can be considered. However, excessive consumption of pure water and etching of the substrate back surface 1b cannot be completely prevented. The further problem described above is not preferred.
【０００９】それ故、本発明の目的は、基板表面１ａの
領域と基板裏面１ｂの領域とを分離し、一方の領域用の
処理液が他方の領域内に浸入しない枚葉式基板処理装置
を提供することである。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a single-wafer substrate processing apparatus in which a region of a substrate front surface 1a and a region of a substrate back surface 1b are separated so that a processing solution for one region does not enter the other region. To provide.
【００１０】[0010]
【課題を解決するための手段および発明の効果】第１の
発明は、回転する基板の表面および裏面に処理液を供給
してそれぞれ処理を行う枚葉式基板処理装置であって、
基板の裏面に処理液を供給する供給口を有し、基板を載
置して当該基板の表面側の空間領域と裏面側の空間領域
とを分離するとともに、当該基板と一体に回転する基板
回転手段と、基板の表面に処理液を供給する供給口を有
し、基板回転手段の上面を覆う上カバーと、基板回転手
段の下面を覆う下カバーと、上カバーと下カバーとの間
に構成され、基板の表面に供給する処理液を排出する経
路と基板の裏面に供給する処理液を排出する経路とを分
離する中仕切とを備え、基板回転手段は、中仕切に近接
する面に１または２以上のリブを周設し、中仕切は、基
板回転手段に近接する面に１または２以上のリブを周設
し、基板回転手段に形成されたリブと中仕切に形成され
たリブとが一体的にラビリンス構造を構成することで、
当該基板回転手段と当該中仕切との間に生じる隙間をシ
ールする。Means for Solving the Problems and Effects of the Invention A first invention is a single-wafer-type substrate processing apparatus for performing processing by supplying a processing liquid to the front surface and the back surface of a rotating substrate, respectively.
A substrate rotation port having a supply port for supplying a processing liquid on the back surface of the substrate, placing the substrate thereon to separate a space region on the front surface side and a space region on the back surface of the substrate, and rotating integrally with the substrate; Means, a supply port for supplying a processing liquid to the surface of the substrate, an upper cover covering the upper surface of the substrate rotating means, a lower cover covering the lower surface of the substrate rotating means, and a structure between the upper cover and the lower cover. A partition for separating a path for discharging the processing liquid to be supplied to the front surface of the substrate and a path for discharging the processing liquid to be supplied to the back surface of the substrate; Or, two or more ribs are provided in the periphery, and the partition is provided with one or two or more ribs on the surface close to the substrate rotating means, and the rib formed in the substrate rotating means and the rib formed in the middle partition are separated from each other. By forming a labyrinth structure integrally,
A gap generated between the substrate rotating means and the intermediate partition is sealed.
【００１１】上記のように、第１の発明によれば、基板
回転手段と中仕切との隙間に複数のリブで構成されるラ
ビリンスシールを設けることで、処理液の供給口から排
出口までに渡って基板表面の領域と基板裏面の領域とを
分離でき、一方の領域用の処理液が他方の領域内に浸入
することを防止できる。As described above, according to the first aspect of the present invention, the labyrinth seal composed of a plurality of ribs is provided in the gap between the substrate rotating means and the partition, so that the processing liquid is supplied from the supply port to the discharge port. The region on the front surface of the substrate and the region on the back surface of the substrate can be separated, and the treatment liquid for one region can be prevented from entering the other region.
【００１２】第２の発明は、回転する基板の表面および
裏面に処理液を供給してそれぞれ処理を行う枚葉式基板
処理装置であって、基板の裏面に処理液を供給する供給
口を有し、基板を載置して当該基板の表面側の空間領域
と裏面側の空間領域とを分離するとともに、当該基板と
一体に回転する基板回転手段と、基板の表面に処理液を
供給する供給口を有し、基板回転手段の上面を覆う上カ
バーと、基板回転手段の下面を覆う下カバーと、上カバ
ーと下カバーとの間に構成され、基板の表面に供給する
処理液を排出する経路と基板の裏面に供給する処理液を
排出する経路とを分離する中仕切とを備え、基板回転手
段と中仕切とが近接する面において、当該基板回転手段
または当該中仕切のいずれか一方の面に他方の面と接す
るパッキンを周設することで、当該基板回転手段と当該
中仕切との間に生じる隙間をシールする。A second aspect of the present invention is a single-wafer substrate processing apparatus for supplying a processing liquid to a front surface and a back surface of a rotating substrate to perform processing, respectively, and has a supply port for supplying the processing liquid to the back surface of the substrate. A substrate rotating means for mounting the substrate to separate a space region on the front surface side and a space region on the back surface of the substrate and rotating integrally with the substrate; and supplying a processing liquid to the surface of the substrate. An upper cover having an opening and covering the upper surface of the substrate rotating means, a lower cover covering the lower surface of the substrate rotating means, and being disposed between the upper cover and the lower cover, for discharging the processing liquid supplied to the surface of the substrate. A partition for separating a path and a path for discharging the processing liquid supplied to the back surface of the substrate, and on a surface where the substrate rotating unit and the partition are close to each other, one of the substrate rotating unit and the intermediate partition is provided. Peripheral packing around the other surface In Rukoto to seal the gap formed between said substrate rotating means and the intermediate partition.
【００１３】上記のように、第２の発明によれば、基板
回転手段と中仕切との隙間にパッキンシールを設けるこ
とで、処理液の供給口から排出口までに渡って基板表面
の領域と基板裏面の領域とを分離でき、一方の領域用の
処理液が他方の領域内に浸入することを防止できる。As described above, according to the second aspect of the present invention, by providing the packing seal in the gap between the substrate rotating means and the partition, the area of the substrate surface can be reduced from the supply liquid supply port to the discharge port. The region on the back surface of the substrate can be separated, and the treatment liquid for one region can be prevented from entering the other region.
【００１４】[0014]
【発明の実施の形態】図１は、本発明の一実施形態に係
る枚葉式基板処理装置の縦断面図である。図１におい
て、本発明の一実施形態に係る枚葉式基板処理装置は、
スピンベース２と、上カバー３と、中仕切４と、下カバ
ー５とを備える。FIG. 1 is a longitudinal sectional view of a single wafer processing apparatus according to an embodiment of the present invention. In FIG. 1, a single-wafer-type substrate processing apparatus according to an embodiment of the present invention includes:
A spin base 2, an upper cover 3, a middle partition 4, and a lower cover 5 are provided.
【００１５】上カバー３は、処理液供給口３ａから基板
表面１ａ用の処理液を供給する。スピンベース２は、処
理液供給口２ａから基板裏面１ｂ用の処理液を供給す
る。また、スピンベース２は、基板装着台２１と４つの
爪２２とを備え、基板１を保持する。さらに、スピンベ
ース２は、図示しないモータによってベルトドライブや
ギアドライブ等の方法により、処理液供給口２ａを中心
に高速回転を行う。上カバー３と中仕切４は、基板表面
１ａの処理後の廃液の排出経路３ｂを構成する。中仕切
４と下カバー５は、基板裏面１ｂの処理後の廃液の排出
経路２ｂを構成する。The upper cover 3 supplies a processing liquid for the substrate surface 1a from a processing liquid supply port 3a. The spin base 2 supplies the processing liquid for the substrate back surface 1b from the processing liquid supply port 2a. Further, the spin base 2 includes a substrate mounting table 21 and four claws 22 and holds the substrate 1. Further, the spin base 2 rotates at high speed around the processing liquid supply port 2a by a method such as a belt drive or a gear drive by a motor (not shown). The upper cover 3 and the middle partition 4 constitute a discharge path 3b for the waste liquid after the treatment of the substrate surface 1a. The middle partition 4 and the lower cover 5 constitute a discharge path 2b for the waste liquid after the processing of the substrate back surface 1b.
【００１６】以下、図２〜図４を用いて、本発明の一実
施形態に係る枚葉式基板処理装置の構造を説明する。図
２は、図１におけるＡ−Ａ要部断面図である。図３は、
図２におけるＢ−Ｂ断面を矢印Ｃ方向から見た基板装着
台２１の斜視図である。図４は、図２におけるＢ−Ｂ断
面を矢印Ｃ方向から見た中仕切４の斜視図である。The structure of a single wafer processing apparatus according to an embodiment of the present invention will be described below with reference to FIGS. FIG. 2 is a cross-sectional view of an AA main part in FIG. FIG.
FIG. 3 is a perspective view of the board mounting table 21 when a cross section taken along line BB in FIG. FIG. 4 is a perspective view of the middle partition 4 when a section taken along line BB in FIG.
【００１７】図３において、基板装着台２１は、スピン
ベース２上に円形状に立設形成される。基板１は、基板
装着台２１の段差２１ｃ上に載置される。さらに、基板
１は、上記従来の基板装着台２１と同様に、４つの爪２
２により固定的に保持される（図８を参照）。もちろ
ん、段差２１ｃと基板裏面１ｂとの接触面は、完全にシ
ールされている。このシールは、例えば、段差２１ｃ面
を樹脂等で構成し、基板１を爪２２で圧接することで行
えばよい。また、基板表面１ａ用の処理液の排出能力を
高めるため、基板装着台２１の高さＤは、基板１の厚さ
と同じ高さ、若しくは基板１が脱落しない範囲で基板１
の厚さと同じ高さ以下になるように形成する。そして、
基板装着台２１は、全周に基板裏面１ｂ用の処理液を排
出するために複数の排液穴２１ａを設けている。さら
に、基板装着台２１は、外壁（中仕切４と近接する面）
にリブ２１ｂを周設している。図４において、中仕切４
は、内壁（基板装着台２１に近接する面）にリブ４１ａ
および４１ｂを周設している。In FIG. 3, the substrate mounting table 21 is formed on the spin base 2 in a circular shape. The substrate 1 is placed on a step 21c of the substrate mounting table 21. Further, the board 1 has four claws 2 in the same manner as the above-described conventional board mounting table 21.
2 is fixedly held (see FIG. 8). Of course, the contact surface between the step 21c and the substrate back surface 1b is completely sealed. This sealing may be performed, for example, by forming the surface of the step 21c with a resin or the like and pressing the substrate 1 against the claw 22 with pressure. Further, in order to increase the discharge capacity of the processing liquid for the substrate surface 1a, the height D of the substrate mounting table 21 is set to the same height as the thickness of the substrate 1 or within a range where the substrate 1 does not fall off.
Is formed so as to have a height equal to or less than the thickness of the substrate. And
The substrate mounting table 21 is provided with a plurality of drain holes 21a around the entire periphery for discharging the processing liquid for the substrate back surface 1b. Further, the substrate mounting table 21 is provided on an outer wall (a surface close to the middle partition 4).
Is provided with ribs 21b. In FIG.
Are ribs 41a on the inner wall (the surface close to the substrate mounting table 21).
And 41b are provided around.
【００１８】基板装着台２１のリブ２１ｂは、中仕切４
のリブ４１ａとリブ４１ｂとの間に非接触の形で挿入さ
れ、ラビリンス構造を構成する（図１を参照）。このラ
ビリンス構造は、処理液流入に対する抵抗となり、基板
表面１ａの処理液の基板裏面１ｂへの浸入を防ぐシール
の役割を果たす。The rib 21b of the board mounting table 21 is
Are inserted in a non-contact manner between the ribs 41a and 41b to form a labyrinth structure (see FIG. 1). The labyrinth structure serves as a resistance against the inflow of the processing liquid and serves as a seal for preventing the processing liquid on the substrate front surface 1a from entering the substrate back surface 1b.
【００１９】上記構造により、基板表面１ａの処理は、
処理液供給口３ａから供給される処理液を用いて行い、
処理が終わった廃液は上記ラビリンス構造のシール部に
より基板裏面１ｂ側へ浸入することなく、排出経路３ｂ
を通して順に排出される。一方、基板裏面１ｂの処理
は、処理液供給口２ａから供給される処理液を用いて行
い、処理が終わった廃液は（上記ラビリンス構造のシー
ル部により基板表面１ａ側へ浸入することなく）、排液
穴２１ａおよび排出経路２ｂを通して順に排出される。With the above structure, the treatment of the substrate surface 1a
Performed using the processing liquid supplied from the processing liquid supply port 3a,
The waste liquid after the treatment does not enter the substrate back surface 1b side by the seal portion of the labyrinth structure, and is discharged to the discharge path 3b.
Are sequentially discharged through On the other hand, the processing of the substrate back surface 1b is performed using the processing liquid supplied from the processing liquid supply port 2a, and the waste liquid after the processing is performed (without infiltration into the substrate surface 1a side by the labyrinth structure sealing portion). The liquid is sequentially discharged through the drain hole 21a and the discharge path 2b.
【００２０】以上のように、本発明の一実施形態に係る
枚葉式基板処理装置は、スピンベース２と中仕切４との
隙間に複数のリブからなるラビリンス構造のシール部を
設けることで、基板表面１ａの領域と基板裏面１ｂの領
域とを分離でき、一方の領域用の処理液が他方の領域内
に浸入することを防止できる。As described above, the single-wafer substrate processing apparatus according to one embodiment of the present invention provides a labyrinth-structured seal portion including a plurality of ribs in the gap between the spin base 2 and the partition 4. The region of the substrate front surface 1a and the region of the substrate back surface 1b can be separated, and the treatment liquid for one region can be prevented from entering the other region.
【００２１】なお、上記シール部は、上記実施形態で説
明したリブ２１ｂ，４１ａおよび４１ｂからなるラビリ
ンス構造に限られず、例えば、同様のラビリンス構造に
あっては、図５（ａ）に示すように、リブの数を任意に
増加させることができる。このリブの部分は、上記実施
形態で説明したように、それぞれ基板装着台２１および
中仕切４と一体成形で周設してもよいし、樹脂等の材料
で個別に形成して基板装着台２１および中仕切４に周設
するようにしてもよい。さらに、リブは、基板装着台２
１および中仕切４ともに同数周設してもよいし、中仕切
４より基板装着台２１に周設する数を多くしてもよい。The above-mentioned sealing portion is not limited to the labyrinth structure composed of the ribs 21b, 41a and 41b described in the above embodiment. For example, in a similar labyrinth structure, as shown in FIG. , The number of ribs can be arbitrarily increased. As described in the above embodiment, the rib portions may be formed integrally with the board mounting base 21 and the partition 4, respectively, or may be individually formed of a material such as resin to form the board mounting base 21. And around the middle partition 4. Further, the rib is mounted on the board mounting table 2.
One and the middle partition 4 may be provided with the same number of circumferences, or the number of the circumferences provided on the board mounting table 21 may be larger than that of the middle partition 4.
【００２２】また、上記シール部は、上記ラビリンス構
造以外に、図５（ｂ）に示すように、Ｖ形状パッキン５
１を用いることも可能である。この場合、Ｖ形状パッキ
ン５１は、基板装着台２１または中仕切４の一方の壁面
に固定的に周設され、他方の壁面に接触させてシールす
る。このＶ形状パッキンは、樹脂等の材料で形成すれば
よい。In addition to the above-mentioned labyrinth structure, the above-mentioned sealing portion is provided with a V-shaped packing 5 as shown in FIG.
It is also possible to use 1. In this case, the V-shaped packing 51 is fixedly provided on one wall surface of the substrate mounting table 21 or the partition 4, and is brought into contact with the other wall surface for sealing. The V-shaped packing may be formed of a material such as a resin.
【００２３】さらに、基板１を保持するための基板装着
台２１の爪２２は、上記実施形態で説明した４箇所に限
られず、必要に応じて任意の数を設けることができる。Further, the number of the claws 22 of the substrate mounting table 21 for holding the substrate 1 is not limited to the four positions described in the above embodiment, and any number can be provided as needed.
【図１】本発明の一実施形態に係る枚葉式基板処理装置
の縦断面図である。FIG. 1 is a longitudinal sectional view of a single wafer type substrate processing apparatus according to an embodiment of the present invention.
【図２】図１のＡ−Ａ要部断面図である。FIG. 2 is a cross-sectional view of an AA main part of FIG.
【図３】図２のＢ−Ｂ断面を矢印Ｃ方向から見た基板装
着台２１の斜視図である。FIG. 3 is a perspective view of the board mounting base 21 when a cross section taken along line BB of FIG.
【図４】図２のＢ−Ｂ断面を矢印Ｃ方向から見た中仕切
４の斜視図である。FIG. 4 is a perspective view of a middle partition 4 when a cross section taken along line BB of FIG.
【図５】シール部の他の構成例を示す図である。FIG. 5 is a diagram showing another example of the configuration of the seal portion.
【図６】従来の枚葉式基板処理装置の縦断面図である。FIG. 6 is a longitudinal sectional view of a conventional single-wafer substrate processing apparatus.
【図７】図６のＥ方向矢視図である。7 is a view as seen in the direction of arrow E in FIG. 6;
【図８】図７のＦ方向矢視図である。FIG. 8 is a view as viewed in the direction of arrow F in FIG. 7;
【図９】従来の枚葉式基板処理装置の問題点を示す図で
ある。FIG. 9 is a diagram showing a problem of a conventional single-wafer substrate processing apparatus.
１…基板 １ａ…基板表面 １ｂ…基板裏面 ２…スピンベース ２ａ、３ａ…処理液供給口 ２ｂ、３ｂ…排出経路 ３…上カバー ４…中仕切 ５…下カバー ２１…基板装着台 ２１ａ…排液穴 ２１ｂ、４１ａ、４１ｂ…リブ ２１ｃ…段差 ２２…爪 ２３…回転軸 ３０…表面用処理液供給ノズル ５１…Ｖ形状パッキン ６０…スプラッシュガード DESCRIPTION OF SYMBOLS 1 ... Substrate 1a ... Substrate surface 1b ... Substrate back surface 2 ... Spin base 2a, 3a ... Processing liquid supply port 2b, 3b ... Discharge path 3 ... Upper cover 4 ... Middle partition 5 ... Lower cover 21 ... Substrate mounting base 21a ... Drainage Hole 21b, 41a, 41b Rib 21c Step 22 Claw 23 Rotating shaft 30 Surface treatment liquid supply nozzle 51 V-shaped packing 60 Splash guard
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/306 Ｊ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/306 E
Claims (2)
を供給してそれぞれ処理を行う枚葉式基板処理装置であ
って、 前記基板の裏面に処理液を供給する供給口を有し、前記
基板を載置して当該基板の表面側の空間領域と裏面側の
空間領域とを分離するとともに、当該基板と一体に回転
する基板回転手段と、 前記基板の表面に処理液を供給する供給口を有し、前記
基板回転手段の上面を覆う上カバーと、 前記基板回転手段の下面を覆う下カバーと、 前記上カバーと前記下カバーとの間に構成され、前記基
板の表面に供給する処理液を排出する経路と前記基板の
裏面に供給する処理液を排出する経路とを分離する中仕
切とを備え、 前記基板回転手段は、前記中仕切に近接する面に１また
は２以上のリブを周設し、前記中仕切は、前記基板回転
手段に近接する面に１または２以上のリブを周設し、 前記基板回転手段に形成されたリブと前記中仕切に形成
されたリブとが一体的にラビリンス構造を構成すること
で、当該基板回転手段と当該中仕切との間に生じる隙間
をシールする、枚葉式基板処理装置。1. A single-wafer substrate processing apparatus for supplying a processing liquid to a front surface and a back surface of a rotating substrate to perform processing, respectively, comprising a supply port for supplying a processing liquid to the back surface of the substrate, A substrate rotating unit that mounts the substrate and separates a space region on the front surface side and a space region on the back surface of the substrate, and rotates integrally with the substrate; and a supply port that supplies a processing liquid to the surface of the substrate. An upper cover that covers an upper surface of the substrate rotating unit; a lower cover that covers a lower surface of the substrate rotating unit; and a process that is configured between the upper cover and the lower cover and supplies the surface to the surface of the substrate. A partition for separating a path for discharging the liquid and a path for discharging the processing liquid supplied to the back surface of the substrate, wherein the substrate rotating means includes one or more ribs on a surface adjacent to the partition. Peripherally, the partition is the substrate rotation One or two or more ribs are provided on the surface close to the step, and the rib formed on the substrate rotating means and the rib formed on the partition integrally form a labyrinth structure, whereby the substrate is formed. A single-wafer substrate processing apparatus for sealing a gap generated between a rotating unit and the intermediate partition.
を供給してそれぞれ処理を行う枚葉式基板処理装置であ
って、 前記基板の裏面に処理液を供給する供給口を有し、前記
基板を載置して当該基板の表面側の空間領域と裏面側の
空間領域とを分離するとともに、当該基板と一体に回転
する基板回転手段と、 前記基板の表面に処理液を供給する供給口を有し、前記
基板回転手段の上面を覆う上カバーと、 前記基板回転手段の下面を覆う下カバーと、 前記上カバーと前記下カバーとの間に構成され、前記基
板の表面に供給する処理液を排出する経路と前記基板の
裏面に供給する処理液を排出する経路とを分離する中仕
切とを備え、 前記基板回転手段と前記中仕切とが近接する面におい
て、当該基板回転手段または当該中仕切のいずれか一方
の面に他方の面と接するパッキンを周設することで、当
該基板回転手段と当該中仕切との間に生じる隙間をシー
ルする、枚葉式基板処理装置。2. A single-wafer substrate processing apparatus for supplying a processing liquid to a front surface and a back surface of a rotating substrate to perform processing, respectively, comprising a supply port for supplying a processing liquid to a back surface of the substrate, A substrate rotating unit that mounts the substrate and separates a space region on the front surface side and a space region on the back surface of the substrate, and rotates integrally with the substrate; and a supply port that supplies a processing liquid to the surface of the substrate. An upper cover that covers an upper surface of the substrate rotating unit; a lower cover that covers a lower surface of the substrate rotating unit; and a process that is configured between the upper cover and the lower cover and supplies the surface to the surface of the substrate. A partition for separating a path for discharging the liquid and a path for discharging the processing liquid to be supplied to the back surface of the substrate, wherein the substrate rotating means and the substrate rotating means or One of the partitions Other by circumferentially provided a packing in contact with the surface, to seal the gap formed between said substrate rotating means and the intermediate partition, single wafer substrate processing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34522997A JP3512322B2 (en) | 1997-12-15 | 1997-12-15 | Single wafer substrate processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34522997A JP3512322B2 (en) | 1997-12-15 | 1997-12-15 | Single wafer substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11176787A true JPH11176787A (en) | 1999-07-02 |
| JP3512322B2 JP3512322B2 (en) | 2004-03-29 |
Family
ID=18375179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34522997A Expired - Fee Related JP3512322B2 (en) | 1997-12-15 | 1997-12-15 | Single wafer substrate processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3512322B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004056006A (en) * | 2002-07-23 | 2004-02-19 | Dainippon Screen Mfg Co Ltd | Device and method for treating substrate |
| JP2004515053A (en) * | 2000-06-26 | 2004-05-20 | アプライド マテリアルズ インコーポレイテッド | Wafer cleaning method and apparatus |
| JP2009206485A (en) * | 2008-01-31 | 2009-09-10 | Dainippon Screen Mfg Co Ltd | Substrate treatment apparatus, and substrate support to be used for the apparatus |
| CN101794089A (en) * | 2010-04-12 | 2010-08-04 | 常州瑞择微电子科技有限公司 | Resist removing method of electron beam resist optical mask plate and device thereof |
| JP2014022563A (en) * | 2012-07-18 | 2014-02-03 | Mitsubishi Electric Corp | Solar cell manufacturing apparatus and manufacturing method for solar cell using the same |
| US9136151B2 (en) | 2010-06-29 | 2015-09-15 | Asml Netherlands B.V. | Actuator |
| US9472441B2 (en) | 2012-04-25 | 2016-10-18 | Ebara Corporation | Substrate processing apparatus |
-
1997
- 1997-12-15 JP JP34522997A patent/JP3512322B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004515053A (en) * | 2000-06-26 | 2004-05-20 | アプライド マテリアルズ インコーポレイテッド | Wafer cleaning method and apparatus |
| JP2004056006A (en) * | 2002-07-23 | 2004-02-19 | Dainippon Screen Mfg Co Ltd | Device and method for treating substrate |
| JP2009206485A (en) * | 2008-01-31 | 2009-09-10 | Dainippon Screen Mfg Co Ltd | Substrate treatment apparatus, and substrate support to be used for the apparatus |
| US9401283B2 (en) | 2008-01-31 | 2016-07-26 | SCREEN Holdings Co., Ltd. | Substrate treatment method |
| CN101794089A (en) * | 2010-04-12 | 2010-08-04 | 常州瑞择微电子科技有限公司 | Resist removing method of electron beam resist optical mask plate and device thereof |
| US9136151B2 (en) | 2010-06-29 | 2015-09-15 | Asml Netherlands B.V. | Actuator |
| US9472441B2 (en) | 2012-04-25 | 2016-10-18 | Ebara Corporation | Substrate processing apparatus |
| JP2014022563A (en) * | 2012-07-18 | 2014-02-03 | Mitsubishi Electric Corp | Solar cell manufacturing apparatus and manufacturing method for solar cell using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3512322B2 (en) | 2004-03-29 |
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