JPH11165253A - Abrasive slurry, polishing device for substrate and polishing method of substrate - Google Patents
Abrasive slurry, polishing device for substrate and polishing method of substrateInfo
- Publication number
- JPH11165253A JPH11165253A JP33255297A JP33255297A JPH11165253A JP H11165253 A JPH11165253 A JP H11165253A JP 33255297 A JP33255297 A JP 33255297A JP 33255297 A JP33255297 A JP 33255297A JP H11165253 A JPH11165253 A JP H11165253A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- metal
- film
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する分野】本発明は、半導体装置の製造プロ
セスにおける埋め込み配線の形成工程で行なわれる化学
機械研磨に用いられる、研磨スラリー、基板の研磨装置
及び基板の研磨方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing slurry, a substrate polishing apparatus and a substrate polishing method used for chemical mechanical polishing performed in a step of forming embedded wiring in a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】近年、半導体基板上に埋め込み配線（プ
ラグも含む）を形成する手法としては、半導体基板上に
形成された酸化膜等の絶縁膜に配線用凹状溝又はプラグ
用凹部よりなる凹状部を形成した後、凹状部を含む絶縁
膜の上に全面に亘って銅等よりなる導電膜を堆積し、そ
の後、絶縁膜の上に堆積されている導電膜（凹状部内を
除く導電膜）を化学機械研磨により除去することによっ
て、凹状部に埋め込み配線を形成する方法が提案されて
いる。2. Description of the Related Art In recent years, as a method of forming an embedded wiring (including a plug) on a semiconductor substrate, an insulating film such as an oxide film formed on the semiconductor substrate has a concave shape formed by a concave groove for wiring or a concave portion for plug. After forming the portion, a conductive film made of copper or the like is deposited over the entire surface of the insulating film including the concave portion, and thereafter, the conductive film deposited on the insulating film (conductive film excluding the inside of the concave portion) Has been proposed in which a buried wiring is formed in a concave portion by removing the metal by chemical mechanical polishing.
【０００３】以下、従来の埋め込み配線の形成方法を、
図１４〜図１６を参照しながら銅の埋め込み配線を形成
する場合を例にとって説明する。[0003] Hereinafter, a conventional method for forming a buried interconnect will be described.
A case where a copper embedded wiring is formed will be described as an example with reference to FIGS.
【０００４】図１４は従来の化学機械研磨装置の概略構
成を示しており、図１４に示すように、回転運動をする
定盤１０１の上に研磨パッド１０２が設けられており、
該研磨パッド１０２の上方に、研磨パッド１０２の上に
研磨スラリー１０３を供給する研磨スラリー供給管１０
４が設けられている。また、研磨パッド１０２の上方に
は、被研磨基板１０５を保持すると共に保持した被研磨
基板１０５を研磨パッド１０２に押し付ける基板保持ヘ
ッド１０６が上下動可能に設けられている。FIG. 14 shows a schematic configuration of a conventional chemical mechanical polishing apparatus. As shown in FIG. 14, a polishing pad 102 is provided on a rotating platen 101,
A polishing slurry supply pipe 10 for supplying a polishing slurry 103 onto the polishing pad 102 above the polishing pad 102.
4 are provided. Above the polishing pad 102, a substrate holding head 106 that holds the substrate to be polished 105 and presses the held substrate to be polished 105 against the polishing pad 102 is provided to be vertically movable.
【０００５】従来の化学機械研磨装置においては、定盤
１０１の回転に伴って回転運動をする研磨パッド１０２
の上に研磨スラリー１０３を供給しながら、基板保持ヘ
ッド１０６により被研磨基板１０５を研磨パッド１０２
に押し付けると、被研磨基板１０５の表面に堆積された
銅等の金属膜は化学機械研磨されて平坦になる。In a conventional chemical mechanical polishing apparatus, a polishing pad 102 which rotates with the rotation of a platen 101 is provided.
The substrate to be polished 105 is polished by the substrate holding head 106 while the polishing slurry 103 is supplied onto the polishing pad 102.
, The metal film such as copper deposited on the surface of the substrate to be polished 105 is subjected to chemical mechanical polishing to become flat.
【０００６】図１５は、銅等の金属膜を研磨するための
研磨スラリー１０３の成分を模式的に示しており、研磨
スラリー１０３は、水１１０にアルミナ又はシリカ等の
砥粒１１１及び過酸化水素等の酸化剤１１２が含有され
てなる。この研磨スラリー１０３は、酸化剤１１２によ
り金属膜を酸化させると共に酸化した金属膜を砥粒１１
１により研磨して除去することにより、金属膜を平坦化
するものである。FIG. 15 schematically shows the components of a polishing slurry 103 for polishing a metal film such as copper. The polishing slurry 103 is composed of water 110 containing abrasive grains 111 such as alumina or silica and hydrogen peroxide. And the like. The polishing slurry 103 oxidizes the metal film with the oxidizing agent 112 and removes the oxidized metal film from the abrasive grains 11.
The metal film is planarized by polishing and removing the metal film 1.
【０００７】以下、前記の化学機械研磨装置及び研磨ス
ラリーを用いて、銅の埋め込み配線を形成する方法につ
いて、図１６（ａ）〜（ｃ）を参照しながら説明する。Hereinafter, a method for forming a copper embedded wiring using the above-described chemical mechanical polishing apparatus and polishing slurry will be described with reference to FIGS. 16 (a) to 16 (c).
【０００８】まず、図１６（ａ）に示すように、図示し
ない半導体基板上に形成された絶縁膜１２０に、信号線
等の細幅の埋め込み配線を形成するための細幅の配線用
凹状溝１２１、及び電圧電源線、検査用電極又は外部接
続用電極等の広幅の埋め込み配線を形成するための広幅
の配線用凹状溝１２２を形成した後、絶縁膜１２０の上
に全面に亘って例えばＴｉＮよりなるバリア層１２３を
堆積し、その後、バリア層１２３の上に全面に亘って銅
膜１２４を堆積する。尚、図１６（ａ）において、溝パ
ターン密集領域とは細幅の埋め込み配線ひいては細幅の
配線用凹状溝１２１が密集している領域を示し、溝幅の
大きいパターン領域とは、電圧電源線、検査用電極又は
外部用電極等の広幅の埋め込み配線ひいては広幅の配線
用凹状溝１２２が形成される領域を示している。First, as shown in FIG. 16A, a narrow wiring concave groove for forming a narrow embedded wiring such as a signal line is formed in an insulating film 120 formed on a semiconductor substrate (not shown). 121, and a wide wiring recessed groove 122 for forming a wide buried wiring such as a voltage power supply line, an inspection electrode or an external connection electrode, and then, over the entire surface of the insulating film 120, for example, TiN Then, a copper film 124 is deposited over the entire surface of the barrier layer 123. In FIG. 16 (a), the groove pattern dense region indicates a region where the narrow embedded wirings and, consequently, the narrow concave trenches 121 for wiring are densely arranged. The figure shows a region where a wide buried wiring such as an inspection electrode or an external electrode and a wide wiring concave groove 122 are formed.
【０００９】次に、銅膜１２４に対して熱処理を施して
リフローすることにより、図１６（ｂ）に示すように、
銅膜１２４を細幅の配線用凹状溝１２１及び広幅の配線
用凹状溝１２２の底部の隅にまで確実に充填する。Next, by performing a heat treatment on the copper film 124 and performing reflow, as shown in FIG.
The copper film 124 is surely filled to the bottom corners of the narrow wiring concave groove 121 and the wide wiring concave groove 122.
【００１０】次に、前記の研磨スラリー１０３を用いて
銅膜１２４に対して化学機械研磨を施すと、図１６
（ｃ）に示すように、銅膜１２４よりなる通常の埋め込
み配線１２５及び広幅の埋め込み配線１２６が形成され
る。Next, when the copper film 124 is subjected to chemical mechanical polishing using the polishing slurry 103, FIG.
As shown in (c), a normal buried wiring 125 made of a copper film 124 and a wide buried wiring 126 are formed.
【００１１】[0011]
【発明が解決しようとする課題】ところが、前記のよう
にして化学機械研磨を行なうと、図１６（ｃ）に示すよ
うに、溝幅の大きいパターン領域においては、広幅の埋
め込み配線１２５の中央部の膜厚が減少する、いわゆる
ディッシングが起きると共に、溝パターン密集領域にお
いては、細幅の埋め込み配線１２５の高さが所定値に対
して減少する、いわゆるエロージョンが起きる。However, when the chemical mechanical polishing is performed as described above, as shown in FIG. 16C, in the pattern region where the groove width is large, the central portion of the wide buried wiring 125 is formed. In addition, so-called dishing occurs, and so-called erosion occurs in the dense groove pattern region, in which the height of the narrow embedded wiring 125 decreases with respect to a predetermined value.
【００１２】このように、エロージョン又はディッシン
グが起きると、埋め込み配線の高さが低減して配線抵抗
が増大するので、埋め込み配線の信頼性が低下するとい
う問題がある。As described above, when erosion or dishing occurs, the height of the embedded wiring is reduced and the wiring resistance is increased, so that there is a problem that the reliability of the embedded wiring is reduced.
【００１３】また、埋め込み配線に表面段差があると、
リソグラフィの焦点深度の問題から、パターン形成に不
具合が生じてしまう。Further, if the embedded wiring has a surface step,
The problem of the depth of focus of lithography causes a problem in pattern formation.
【００１４】前記に鑑み、本発明は、埋め込み配線が密
集している領域に生じるエロージョン、及び埋め込み配
線の配線幅が広い領域に生じるディッシングを抑制し
て、埋め込み配線の表面高さを均一化し、これにより、
埋め込み配線の信頼性を向上させると共にリソグラフィ
の焦点深度のマージンを確保することを目的とする。In view of the above, the present invention suppresses erosion that occurs in a region where embedded wirings are densely formed and dishing that occurs in a region where the wiring width of the embedded wirings is wide, and makes the surface height of the embedded wirings uniform. This allows
It is an object of the present invention to improve the reliability of embedded wiring and to secure a margin for the depth of focus of lithography.
【００１５】[0015]
【課題を解決するための手段】前記の目的を達成するた
め、本発明に係る研磨スラリーは、金属膜を化学機械研
磨法によって研磨する際に用いられる研磨スラリーを対
象とし、金属膜を構成する金属と同種の金属のイオンが
含有されている。In order to achieve the above object, a polishing slurry according to the present invention is intended for a polishing slurry used when polishing a metal film by a chemical mechanical polishing method, and forms a metal film. Contains ions of the same metal as the metal.
【００１６】本発明の研磨スラリーによると、金属膜を
構成する金属と同種の金属のイオンが含有されているた
め、金属膜に金属のイオンと逆極性の電圧を印加するこ
とにより、金属膜の表面に研磨スラリーに含有されてい
る金属のイオンよりなるメッキ層を形成することができ
る。According to the polishing slurry of the present invention, since ions of the same kind of metal as the metal constituting the metal film are contained, by applying a voltage having a polarity opposite to that of the metal ions to the metal film, A plating layer made of ions of the metal contained in the polishing slurry can be formed on the surface.
【００１７】本発明に係る基板の研磨装置は、平面運動
をする定盤の上に設けられた研磨パッドと、化学機械研
磨される金属膜を構成する金属と同種の金属のイオンが
含有されている研磨スラリーを研磨パッドの上に供給す
る研磨スラリー供給管と、表面に金属膜が形成された基
板を保持し、保持した基板の金属膜を研磨パッドに押し
付ける基板保持ヘッドと、基板保持ヘッドにおける、保
持した基板の金属膜と接触する部位に設けられたヘッド
導電部と、ヘッド導電部に金属のイオンと逆極性の電圧
を印加する逆極性電圧供給源とを備えている。A polishing apparatus for a substrate according to the present invention includes a polishing pad provided on a surface plate that moves in a plane, and ions of the same kind of metal as the metal constituting the metal film to be chemically and mechanically polished. A polishing slurry supply pipe for supplying a polishing slurry to a polishing pad, a substrate holding head for holding a substrate having a metal film formed on its surface, and pressing the metal film of the held substrate against the polishing pad; A head conductive portion provided at a portion in contact with the metal film of the held substrate; and a reverse polarity voltage supply for applying a voltage having a polarity opposite to that of metal ions to the head conductive portion.
【００１８】本発明の基板の研磨装置によると、研磨ス
ラリー供給管から研磨パッドの上に供給される研磨スラ
リーに金属膜を構成する金属と同種の金属のイオンが含
有されていると共に、逆極性電圧供給源により、基板保
持ヘッドにおける基板の金属膜と接触する部位に設けら
れたヘッド導電部に金属のイオンと逆極性の電圧を印加
することができるため、金属膜の表面に研磨スラリーに
含有されている金属のイオンよりなるメッキ層を形成す
ることができる。According to the apparatus for polishing a substrate of the present invention, the polishing slurry supplied from the polishing slurry supply pipe onto the polishing pad contains ions of the same kind of metal as the metal constituting the metal film and has the opposite polarity. Since the voltage supply source can apply a voltage having a polarity opposite to that of metal ions to the head conductive portion provided at a portion of the substrate holding head which comes into contact with the metal film, the polishing slurry is contained on the surface of the metal film. It is possible to form a plating layer made of the ions of the metal being used.
【００１９】本発明の基板の研磨装置は、研磨スラリー
供給管における研磨スラリーと接触する部位に設けられ
た供給管導電部と、供給管導電部に金属のイオンと同極
性の電圧を印加する同極性電圧供給源とをさらに備えて
いることが好ましい。The polishing apparatus for a substrate according to the present invention includes a supply pipe conductive portion provided at a portion of the polishing slurry supply pipe in contact with the polishing slurry, and a voltage having the same polarity as that of metal ions applied to the supply pipe conductive portion. Preferably, a polar voltage supply is further provided.
【００２０】本発明の基板の研磨装置は、研磨スラリー
供給管と研磨パッドとの間に、研磨スラリー供給管から
研磨パッドの上に流下する研磨スラリーと接触するよう
に設けられた導電部材と、導電部材に金属のイオンと同
極性の電圧を印加する同極性電圧供給源とをさらに備え
ていることが好ましい。The polishing apparatus for a substrate according to the present invention comprises: a conductive member provided between a polishing slurry supply pipe and a polishing pad so as to come into contact with a polishing slurry flowing down from the polishing slurry supply pipe onto the polishing pad; It is preferable to further include a voltage source having the same polarity that applies a voltage having the same polarity as the metal ions to the conductive member.
【００２１】本発明の基板の研磨装置は、研磨パッドの
上に該研磨パッド上に拡がる研磨スラリーと接触するよ
うに設けられた導電部材と、導電部材に金属のイオンと
同極性の電圧を印加する同極性電圧供給源とをさらに備
えていることが好ましい。According to the substrate polishing apparatus of the present invention, a conductive member provided on a polishing pad so as to come into contact with a polishing slurry spread on the polishing pad, and a voltage having the same polarity as that of metal ions is applied to the conductive member. It is preferable that the power supply further includes a same-polarity voltage supply source.
【００２２】本発明の基板の研磨装置は、基板保持ヘッ
ドの表面に、ヘッド導電部と絶縁され且つ研磨パッド上
に拡がる研磨スラリーと接触するように設けられた導電
性被膜と、導電性被膜に金属のイオンと同極性の電圧を
印加する同極性電圧供給源とをさらに備えていることが
好ましい。A polishing apparatus for a substrate according to the present invention comprises: a conductive film provided on a surface of a substrate holding head so as to be in contact with a polishing slurry insulated from a conductive portion of a head and spread on a polishing pad; It is preferable to further include a same polarity voltage supply source for applying a voltage having the same polarity as the metal ions.
【００２３】本発明の基板の研磨装置において、研磨パ
ッドは導電性材料よりなり、研磨パッドに金属のイオン
と同極性の電圧を印加する同極性電圧供給源をさらに備
えていることが好ましい。In the apparatus for polishing a substrate according to the present invention, it is preferable that the polishing pad is made of a conductive material and that the polishing pad further includes a same-polarity voltage supply source for applying a voltage of the same polarity as metal ions to the polishing pad.
【００２４】この場合、研磨パッドは、導電性材料より
なる多数の微粒子体と、該多数の微粒子体を一体化する
炭素の重合体とからなることが好ましい。In this case, it is preferable that the polishing pad is composed of a large number of fine particles made of a conductive material and a carbon polymer that integrates the large number of fine particles.
【００２５】本発明に係る基板の研磨方法は、平面運動
をする研磨パッドの上に、研磨される金属膜を構成する
金属と同種の金属のイオンが含有されている研磨スラリ
ーを供給するスラリー供給工程と、金属膜を研磨パッド
に押し付けて、研磨パッドの上に拡がる研磨スラリーに
より金属膜の表面を化学機械研磨する研磨工程と、金属
膜に金属のイオンと逆極性の電圧を印加することによ
り、金属膜の表面に研磨スラリーに含有されている金属
のイオンよりなるメッキ層を形成するメッキ工程とを備
えている。In the method of polishing a substrate according to the present invention, a slurry supply for supplying a polishing slurry containing ions of the same kind of metal as a metal constituting a metal film to be polished on a polishing pad which moves in a plane. By pressing the metal film against the polishing pad and polishing the surface of the metal film with a polishing slurry that spreads on the polishing pad by chemical mechanical polishing, and by applying a voltage having a polarity opposite to that of metal ions to the metal film. A plating step of forming a plating layer made of metal ions contained in the polishing slurry on the surface of the metal film.
【００２６】本発明の基板の研磨方法によると、研磨工
程において金属膜の表面が化学機械研磨されるため金属
膜の膜厚は薄くなるが、メッキ工程において金属膜の表
面にメッキ層が形成される。この場合、金属膜の凸状部
においてはメッキ層は速やかに研磨される一方、金属膜
の凹状部においてはメッキ層は研磨され難いので、埋め
込み配線が密集していたり又は埋め込み配線の配線幅が
広いために金属膜が凹状になり易い領域に選択的にメッ
キ層が形成される。従って、埋め込み配線が密集してい
る領域に生じるエロージョン及び埋め込み配線の配線幅
が広い領域に生じるディッシングが抑制される。According to the substrate polishing method of the present invention, the surface of the metal film is chemically and mechanically polished in the polishing step, so that the thickness of the metal film is reduced. However, a plating layer is formed on the surface of the metal film in the plating step. You. In this case, the plating layer is quickly polished in the convex portion of the metal film, while the plating layer is hard to be polished in the concave portion of the metal film, so that the embedded wirings are densely packed or the wiring width of the embedded wiring is reduced. A plating layer is selectively formed in a region where the metal film is likely to be concave because of its large size. Therefore, erosion occurring in a region where the embedded wirings are densely formed and dishing occurring in a region where the wiring width of the embedded wirings is wide are suppressed.
【００２７】本発明の基板の研磨方法は、金属膜に流れ
る電流の電流値又は金属膜の抵抗値の変化量を測定し、
測定された電流値又は抵抗値の変化量に基づいて、研磨
工程の終点検出を行なう終点検出工程をさらに備えてい
ることが好ましい。In the method of polishing a substrate according to the present invention, a current value of a current flowing through a metal film or a change amount of a resistance value of the metal film is measured.
It is preferable that the method further includes an end point detecting step of detecting an end point of the polishing step based on the measured change amount of the current value or the resistance value.
【００２８】本発明の基板の研磨方法において、メッキ
工程は、研磨工程において金属膜の膜厚が初期膜厚の８
０％〜１０％になったときに開始することが好ましい。In the method of polishing a substrate according to the present invention, in the plating step, the thickness of the metal film in the polishing step is 8 times the initial film thickness.
It is preferred to start when it is between 0% and 10%.
【００２９】本発明の基板の研磨方法において、メッキ
工程は、研磨工程において金属膜の膜厚が初期膜厚の１
００％〜８０％になったときに開始することが好まし
い。In the method of polishing a substrate according to the present invention, in the plating step, the thickness of the metal film in the polishing step is one of the initial film thickness.
It is preferable to start when it becomes 00% to 80%.
【００３０】[0030]
【発明の実施の形態】（第１の実施形態）図１は本発明
の第１の実施形態に係る研磨スラリー１０の成分を模式
的に示しており、第１の実施形態に係る研磨スラリー１
０は、水１１にアルミナ又はシリカ等の砥粒１２、過酸
化水素等の酸化剤１３、及び被研磨膜を構成する金属と
同種の金属のイオン１４が含有されてなる。金属イオン
１４としては、被研磨膜が銅膜の場合には、銅イオン
（Ｃｕ2+）が挙げられる。(First Embodiment) FIG. 1 schematically shows the components of a polishing slurry 10 according to a first embodiment of the present invention, and a polishing slurry 1 according to the first embodiment.
Numeral 0 indicates that water 11 contains abrasive grains 12 such as alumina or silica, an oxidizing agent 13 such as hydrogen peroxide, and ions 14 of the same kind of metal as the metal constituting the film to be polished. When the film to be polished is a copper film, the metal ions 14 include copper ions (Cu 2+ ).
【００３１】研磨スラリー１０に銅イオンを含有させる
方法としては、研磨スラリー１０に硫酸銅（ＣｕＳ
Ｏ4 ）を混合し、混合された硫酸銅をイオン化させてＣ
ｕ2+及びＳＯ4 2-を生じさせる。As a method for causing the polishing slurry 10 to contain copper ions, copper sulfate (CuS
O 4 ) and ionize the mixed copper sulfate to form C 4
This produces u 2+ and SO 4 2- .
【００３２】（第２の実施形態）図２は本発明の第２の
実施形態に係る基板の研磨装置の概略構成を示してお
り、図３は図２における一点鎖線の部分を拡大して示し
ている。(Second Embodiment) FIG. 2 shows a schematic configuration of a substrate polishing apparatus according to a second embodiment of the present invention, and FIG. 3 is an enlarged view of a dashed line in FIG. ing.
【００３３】図２に示すように、回転運動をする定盤２
０の上に研磨パッド２１が設けられており、該研磨パッ
ド２１の上方に、研磨パッド２１の上に第１の実施形態
に係る研磨スラリー１０を供給する研磨スラリー供給管
２３が設けられている。また、研磨パッド２１の上方に
は、被研磨基板２４を保持すると共に保持した被研磨基
板２４の被研磨膜を研磨パッド２１に押し付ける基板保
持ヘッド２５が上下動可能に設けられている。As shown in FIG.
0, a polishing pad 21 is provided. Above the polishing pad 21, a polishing slurry supply pipe 23 for supplying the polishing slurry 10 according to the first embodiment onto the polishing pad 21 is provided. . Above the polishing pad 21, a substrate holding head 25 that holds the substrate 24 to be polished and presses the film to be polished of the substrate 24 to be polished against the polishing pad 21 is provided to be vertically movable.
【００３４】第２の実施形態の特徴として、研磨スラリ
ー供給管２３と基板保持ヘッド２５との間に直流電圧源
２６及び電流計２７が直列に接続されており、直流電圧
源２６、研磨スラリー供給管２３、研磨スラリー１０、
銅膜３３、基板保持ヘッド２５及び電流計２７の間で閉
回路が形成されている。As a feature of the second embodiment, a DC voltage source 26 and an ammeter 27 are connected in series between the polishing slurry supply pipe 23 and the substrate holding head 25. Tube 23, polishing slurry 10,
A closed circuit is formed between the copper film 33, the substrate holding head 25, and the ammeter 27.
【００３５】また、図３に示すように、被研磨基板２４
は、シリコンウェハ３０と、該シリコンウェハ３０の上
に順次堆積されてなる絶縁膜３１、ＴｉＮ層よりなるバ
リア層３２及び銅膜３３とからなる。この場合、シリコ
ンウェハ３０の側面は丸みを持っているため、銅膜３３
はシリコンウェハ３０の厚さ方向のほぼ中央部まで延び
るように形成されている。Further, as shown in FIG.
Is composed of a silicon wafer 30, an insulating film 31 sequentially deposited on the silicon wafer 30, a barrier layer 32 made of a TiN layer, and a copper film 33. In this case, since the side surface of the silicon wafer 30 is rounded, the copper film 33
Are formed so as to extend almost to the center in the thickness direction of the silicon wafer 30.
【００３６】また、基板保持ヘッド２５は導電性材料に
より構成されていると共に、基板保持ヘッド２５におけ
る研磨パッド２１と対向する部位には絶縁体３５が取り
付けられている。The substrate holding head 25 is made of a conductive material, and an insulator 35 is attached to a portion of the substrate holding head 25 facing the polishing pad 21.
【００３７】これらによって、銅膜３３はその周縁部
（ヘッド導電部）において基板保持ヘッド２５と電気的
に接続されていると共に、基板保持ヘッド２５と研磨パ
ッド２１ひいては研磨パッド２１上の研磨スラリー１０
とは電気的に絶縁されている。As a result, the copper film 33 is electrically connected to the substrate holding head 25 at the periphery (head conductive portion), and the polishing slurry 10 on the polishing pad 21 and the substrate holding head 25 and the polishing pad 21.
And are electrically insulated.
【００３８】（第１の基板の研磨方法）以下、第２の実
施形態に係る基板の研磨装置を用いて行なう、第１の基
板の研磨方法について図４（ａ）〜（ｄ）を参照しなが
ら説明する。(First Substrate Polishing Method) Hereinafter, a first substrate polishing method performed by using the substrate polishing apparatus according to the second embodiment will be described with reference to FIGS. 4 (a) to 4 (d). I will explain it.
【００３９】まず、図４（ａ）に示すように、シリコン
ウェハ３０（図４（ａ）〜（ｄ）においては図示を省略
している。）の上に形成された絶縁膜３１に、信号線等
の細幅の埋め込み配線を形成するための細幅の配線用凹
状溝４１、及び電圧電源線、検査用電極又は外部接続用
電極等の広幅の埋め込み配線を形成するための広幅の配
線用凹状溝４２を形成した後、絶縁膜３１の上に全面に
亘って例えばＴｉＮよりなるバリア層３２を堆積し、そ
の後、バリア層３２の上に全面に亘って銅膜３３を堆積
する。尚、溝パターン密集領域及び溝幅の大きいパター
ン領域の意味については、図１６（ａ）に示した従来の
基板の研磨方法と同様である。First, as shown in FIG. 4A, a signal is applied to an insulating film 31 formed on a silicon wafer 30 (not shown in FIGS. 4A to 4D). For forming a narrow wiring concave groove 41 for forming a narrow embedded wiring such as a line, and for a wide wiring for forming a wide embedded wiring such as a voltage power supply line, an inspection electrode or an external connection electrode. After the formation of the concave groove 42, a barrier layer 32 made of, for example, TiN is deposited on the entire surface of the insulating film 31, and then a copper film 33 is deposited on the entire surface of the barrier layer 32. The meanings of the dense groove pattern area and the pattern area having a large groove width are the same as those of the conventional substrate polishing method shown in FIG.
【００４０】次に、銅膜３３に対して熱処理を施してリ
フローすることにより、図４（ｂ）に示すように、銅膜
３３を細幅の配線用凹状溝４１及び広幅の配線用凹状溝
４２の底部の隅にまで充填する。Next, by subjecting the copper film 33 to heat treatment and reflow, the copper film 33 is formed into a narrow wiring concave groove 41 and a wide wiring concave groove as shown in FIG. Fill to the bottom corner of 42.
【００４１】次に、定盤２０を回転して研磨パッド２１
を回転しながら、研磨スラリー供給管２３から第１の実
施形態に係る研磨スラリー１０を研磨パッド２１の上に
供給すると共に、基板保持ヘッド２５を降下させて、銅
膜３３に対して化学機械研磨を施す。Next, the platen 20 is rotated to rotate the polishing pad 21.
While rotating, the polishing slurry 10 according to the first embodiment is supplied onto the polishing pad 21 from the polishing slurry supply pipe 23, and the substrate holding head 25 is lowered to perform chemical mechanical polishing on the copper film 33. Is applied.
【００４２】そして、銅膜３３に対する化学機械研磨が
或る程度まで進行した段階で、銅膜３３に対する化学機
械研磨を続けながら、直流電圧源２６から研磨スラリー
供給管２３に正の電圧を印加する一方、基板保持ヘッド
２５に負の電圧を印加する。When the chemical mechanical polishing of the copper film 33 has progressed to a certain extent, a positive voltage is applied from the DC voltage source 26 to the polishing slurry supply pipe 23 while the chemical mechanical polishing of the copper film 33 is continued. On the other hand, a negative voltage is applied to the substrate holding head 25.
【００４３】このようにすると、研磨スラリー１０に含
まれている銅の正イオン（Ｃｕ2+）は、基板保持ヘッド
２５を介して負の電圧が印加されている銅膜３３に引き
寄せられると共に銅膜３３から電子を貰って、銅膜３３
の表面に銅原子として付着する。すなわち、図４（ｃ）
に示すように、銅膜３３は化学機械研磨によって膜厚が
薄くなるが、銅膜３３の表面に銅の電解メッキが施され
るため、銅膜３３の表面に銅のメッキ層４３が形成され
る。この場合、銅膜３３の表面にはほぼ等しい膜厚のメ
ッキ層４３が成長するが、絶縁膜３１の凸部３１ａの上
の銅膜３３に付着するメッキ層４３は化学機械研磨によ
って速やかに除去されるので、細幅の配線用凹状溝４１
に堆積されている銅膜３３の表面高さと絶縁膜３１の凸
部３１ａの表面高さとはほぼ等しくなる。また、広幅の
配線用凹状溝４２に堆積されている銅膜３３の表面高さ
は、絶縁膜３１の凸部３１ａの表面高さよりも若干低い
が、銅の電解メッキを行なわない場合に比べて高くなる
ので、つまり絶縁膜３１の凸部３１ａの表面高さに接近
するので、銅膜３３の表面の段差は緩和される。In this way, the positive ions (Cu 2+ ) of copper contained in the polishing slurry 10 are attracted to the copper film 33 to which the negative voltage is applied via the substrate holding head 25 and the copper Electrons are received from the film 33 and the copper film 33
Adheres to the surface of the surface as copper atoms. That is, FIG.
As shown in (2), the copper film 33 is thinned by chemical mechanical polishing. However, since copper is electrolytically plated on the surface of the copper film 33, a copper plating layer 43 is formed on the surface of the copper film 33. You. In this case, the plating layer 43 having substantially the same thickness grows on the surface of the copper film 33, but the plating layer 43 attached to the copper film 33 on the convex portion 31a of the insulating film 31 is quickly removed by chemical mechanical polishing. , So that the narrow wiring concave groove 41 is formed.
The surface height of the copper film 33 deposited on the insulating film 31 is substantially equal to the surface height of the protrusion 31a of the insulating film 31. The surface height of the copper film 33 deposited in the wide wiring concave groove 42 is slightly lower than the surface height of the projection 31 a of the insulating film 31, but compared with the case where copper electrolytic plating is not performed. Since the height is increased, that is, the surface height of the convex portion 31a of the insulating film 31 is approached, the step on the surface of the copper film 33 is reduced.
【００４４】その後、銅膜３３に対する化学機械研磨、
研磨スラリー供給管２３への正の電圧の印加、及び基板
保持ヘッド２５への負の電圧の印加を継続すると、広幅
の配線用凹状溝４２に堆積されている銅膜３３の表面高
さは絶縁膜３１の凸部３１ａの表面高さよりも低いた
め、広幅の配線用凹状溝４２に堆積されている銅膜３３
の表面にはメッキ層４３が成長し、段差は徐々に緩和さ
れる。Thereafter, chemical mechanical polishing of the copper film 33 is performed.
When the application of a positive voltage to the polishing slurry supply pipe 23 and the application of a negative voltage to the substrate holding head 25 are continued, the surface height of the copper film 33 deposited in the wide concave groove 42 for wiring becomes insulating. Since the surface height of the projection 31a of the film 31 is lower than that of the copper film 33, the copper film 33
The plating layer 43 grows on the surface of the substrate, and the step is gradually alleviated.
【００４５】次に、バリア層３２が研磨により除去さ
れ、絶縁膜３１が露出した段階で、銅膜３３に対する化
学機械研磨、研磨スラリー供給管２３への正の電圧の印
加、及び基板保持ヘッド２５への負の電圧の印加を終了
する。このようにすると、図４（ｄ）に示すように、細
幅の配線用凹状溝４１に堆積される細幅の埋め込み配線
４５と広幅の配線用凹状溝４２に堆積される広幅の埋め
込み配線４６と絶縁膜３１の凸部３１ａの高さとはほぼ
等しくなる。もっとも、広幅の埋め込み配線４６の中央
部の表面高さは絶縁膜３１の凸部３１ａの表面高さより
も若干低い。Next, when the barrier layer 32 is removed by polishing and the insulating film 31 is exposed, chemical mechanical polishing of the copper film 33, application of a positive voltage to the polishing slurry supply pipe 23, and removal of the substrate holding head 25 are performed. The application of the negative voltage to is terminated. In this way, as shown in FIG. 4D, a narrow embedded wiring 45 deposited in the narrow wiring concave groove 41 and a wide embedded wiring 46 deposited in the wide wiring concave groove 42. And the height of the convex portion 31a of the insulating film 31 becomes substantially equal. However, the surface height of the central portion of the wide embedded wiring 46 is slightly lower than the surface height of the convex portion 31 a of the insulating film 31.
【００４６】以上説明したように、第１の基板の研磨方
法によると、銅膜３３に対して化学機械研磨と銅の電解
メッキとを並行して行なうので、溝パターン密集領域の
細幅の埋め込み配線４５及び広幅の埋め込み配線４６の
表面高さと、絶縁膜３１の表面高さとをほぼ等しくする
ことができる。As described above, according to the first substrate polishing method, the chemical mechanical polishing and the copper electrolytic plating are performed on the copper film 33 in parallel, so that the narrow width of the groove pattern dense region is embedded. The surface height of the wiring 45 and the wide buried wiring 46 can be made substantially equal to the surface height of the insulating film 31.
【００４７】尚、直流電圧源２６から研磨スラリー供給
管２３に正の電圧を印加すると共に基板保持ヘッド２５
に負の電圧を印加して電解メッキを始めるタイミングと
しては、絶縁膜３１の凸部３１ａの上の銅膜３３の膜厚
が初期膜厚の８０〜１０％の範囲内になったときが好ま
しい。その理由は次の通りである。すなわち、銅膜３３
の膜厚が初期膜厚の８０％を超える状態で電解メッキを
始めると、メッキ層４３を堆積させながらメッキ層４３
及び銅膜３３を化学機械研磨するため、化学機械研磨の
研磨レートが実質的に低下するためであり、銅膜３３の
膜厚が初期膜厚の１０％未満になる状態で電解メッキを
始めると、デッシングやエロージョンの抑制効果が殆ど
ないためである。A positive voltage is applied from the DC voltage source 26 to the polishing slurry supply pipe 23 and the substrate holding head 25
The timing for starting the electrolytic plating by applying a negative voltage to is preferably when the thickness of the copper film 33 on the projection 31a of the insulating film 31 falls within the range of 80 to 10% of the initial thickness. . The reason is as follows. That is, the copper film 33
When the electrolytic plating is started in a state where the thickness of the plating layer exceeds 80% of the initial thickness, the plating layer 43 is deposited while depositing the plating layer 43.
This is because the chemical mechanical polishing of the copper film 33 substantially reduces the polishing rate of the chemical mechanical polishing. If the electrolytic plating is started in a state where the thickness of the copper film 33 is less than 10% of the initial film thickness. This is because there is almost no effect of suppressing dishing and erosion.
【００４８】このように、銅膜３３の膜厚が初期膜厚の
８０〜１０％の範囲内になったときに、研磨スラリー供
給管２３に正の電圧を印加すると共に基板保持ヘッド２
５に負の電圧を印加するようにすると、銅膜３３の膜厚
が化学機械研磨により或る程度まで減少するまでの間は
化学機械研磨のみが行なわれるため、化学機械研磨の効
率が向上するので、スループットの低減を抑制すること
ができる。As described above, when the thickness of the copper film 33 falls within the range of 80 to 10% of the initial film thickness, a positive voltage is applied to the polishing slurry supply pipe 23 and the substrate holding head 2
When a negative voltage is applied to 5, only chemical mechanical polishing is performed until the thickness of the copper film 33 is reduced to a certain degree by chemical mechanical polishing, so that the efficiency of chemical mechanical polishing is improved. Therefore, a reduction in throughput can be suppressed.
【００４９】尚、研磨スラリー供給管２３と基板保持ヘ
ッド２５との間に直流電圧源２６を接続する代わりに、
研磨スラリー供給管２３に一の直流電圧源から正の電圧
を印加すると共に、基板保持ヘッド２５に他の直流電圧
源から負の電圧を印加してもよい。このようにすると、
研磨スラリー供給管２３への正の電圧の印加と、基板保
持ヘッド２５への負の電圧の印加とを独立に制御するこ
とができる。また、研磨スラリー供給管２３と基板保持
ヘッド２５との間に、直流電圧源２６のほかに交流電圧
源をも直列に接続してもよい。Incidentally, instead of connecting a DC voltage source 26 between the polishing slurry supply pipe 23 and the substrate holding head 25,
A positive voltage may be applied to the polishing slurry supply pipe 23 from one DC voltage source, and a negative voltage may be applied to the substrate holding head 25 from another DC voltage source. This way,
The application of a positive voltage to the polishing slurry supply pipe 23 and the application of a negative voltage to the substrate holding head 25 can be controlled independently. Further, between the polishing slurry supply pipe 23 and the substrate holding head 25, in addition to the DC voltage source 26, an AC voltage source may be connected in series.
【００５０】（第２の基板の研磨方法）以下、第２の実
施形態に係る基板の研磨装置を用いて行なう、第２の基
板の研磨方法について図５（ａ）〜（ｃ）及び図６を参
照しながら説明する。(Method of Polishing Second Substrate) Hereinafter, a method of polishing a second substrate using the substrate polishing apparatus according to the second embodiment will be described with reference to FIGS. 5 (a) to 5 (c) and FIG. This will be described with reference to FIG.
【００５１】まず、第１の基板の研磨方法と同様に、配
線用凹状溝が形成された絶縁膜３１の上にバリア層３２
及び銅膜３３を順次堆積した後、銅膜３３をリフローし
て細幅の配線用凹状溝４１及び広幅の配線用凹状溝４２
に充填する。First, similarly to the first substrate polishing method, the barrier layer 32 is formed on the insulating film 31 in which the wiring concave groove is formed.
After the copper film 33 is sequentially deposited, the copper film 33 is reflowed to form a narrow wiring concave groove 41 and a wide wiring concave groove 42.
Fill.
【００５２】次に、研磨スラリー供給管２３から第１の
実施形態に係る研磨スラリー１０を研磨パッド２１の上
に供給しながら、銅膜３３に対して化学機械研磨を行な
う。その後、銅膜３３の膜厚が或る程度まで減少したと
きに、直流電圧源２６から研磨スラリー供給管２３に正
の一定の電圧を印加し且つ基板保持ヘッド２５に負の一
定の電圧を印加すると共に、電流計２７によって研磨ス
ラリー供給管２３と基板保持ヘッド２５との間に流れる
電流値を測定して、研磨スラリー供給管２３と基板保持
ヘッド２５との間の抵抗値を算出しながら、銅膜３３に
対して銅の電解メッキを施す。Next, chemical mechanical polishing is performed on the copper film 33 while supplying the polishing slurry 10 according to the first embodiment onto the polishing pad 21 from the polishing slurry supply pipe 23. Thereafter, when the thickness of the copper film 33 decreases to a certain extent, a positive constant voltage is applied from the DC voltage source 26 to the polishing slurry supply pipe 23 and a negative constant voltage is applied to the substrate holding head 25. While measuring the value of the current flowing between the polishing slurry supply pipe 23 and the substrate holding head 25 with the ammeter 27, and calculating the resistance value between the polishing slurry supply pipe 23 and the substrate holding head 25, Copper electrolytic plating is performed on the copper film 33.
【００５３】このようにすると、電解メッキが盛んに行
なわれているときには大きい電流が流れるので、電流値
が大きく且つメッキ抵抗は小さい一方、電解メッキが行
なわれなくなると小さい電流しか流れないので、電流値
は小さく且つメッキ抵抗は大きくなる。In this way, a large current flows when the electroplating is actively performed, so that the current value is large and the plating resistance is small, but when the electroplating is not performed, only a small current flows. The value is small and the plating resistance is large.
【００５４】図５（ａ）〜（ｃ）及び図６（ａ）〜
（ｃ）は、銅膜３３に対して電解メッキを施しながら化
学機械研磨を行なったときの、シリコンウェハ３０の上
に形成されている絶縁膜３１、バリア層３２及び銅膜３
３の露出状態を示しており、図５（ａ）〜（ｃ）は断面
構造を表わし、図６（ａ）〜（ｃ）は平面構造を表わし
ている。また、図７は銅膜３３に対して電解メッキを施
しながら化学機械研磨を行なったときの研磨時間と抵抗
値との関係を示している。FIGS. 5A to 5C and FIGS.
(C) shows an insulating film 31, a barrier layer 32, and a copper film 3 formed on a silicon wafer 30 when chemical mechanical polishing is performed while electrolytic plating is performed on the copper film 33.
3 shows an exposed state, and FIGS. 5A to 5C show cross-sectional structures, and FIGS. 6A to 6C show planar structures. FIG. 7 shows the relationship between the polishing time and the resistance value when chemical mechanical polishing is performed while performing electrolytic plating on the copper film 33.
【００５５】図５（ａ）及び図６（ａ）に示すように、
化学機械研磨の初期においては、銅膜３３の膜厚が十分
に大きくて、バリア層３２が露出していないため、大き
な電流が流れるので、図６のグラフのＡに示すように、
抵抗値は小さい。As shown in FIGS. 5A and 6A,
In the initial stage of the chemical mechanical polishing, the copper film 33 is sufficiently thick and the barrier layer 32 is not exposed, so that a large current flows. As shown in A of FIG.
Resistance value is small.
【００５６】その後、図５（ｂ）及び図６（ｂ）に示す
ように、化学機械研磨が進行して、銅膜３３の膜厚が小
さくなっていき、バリア層３２が露出し始めると、バリ
ヤー３２を構成するＴｉＮはＣｕに比べて比抵抗が大き
くため、電流値が低下していくので、図６のグラフのＢ
に示すように、抵抗値は増加し続ける。Thereafter, as shown in FIG. 5B and FIG. 6B, when the chemical mechanical polishing proceeds, the thickness of the copper film 33 becomes smaller, and the barrier layer 32 starts to be exposed. Since the specific resistance of TiN constituting the barrier 32 is higher than that of Cu, the current value decreases.
As shown in the figure, the resistance value continues to increase.
【００５７】その後、図５（ｃ）及び図６（ｃ）に示す
ように、化学機械研磨がさらに進行して、絶縁膜３１が
大きく露出すると、電流が殆ど流れなくなるので、図６
のグラフのＣに示すように、抵抗値はほぼ無限大になっ
て抵抗値の増加は飽和する。この状態で、化学機械研磨
及び電解メッキを終了する。After that, as shown in FIGS. 5C and 6C, when the chemical mechanical polishing further proceeds and the insulating film 31 is largely exposed, almost no current flows.
As shown by C in the graph, the resistance value becomes almost infinite, and the increase in the resistance value is saturated. In this state, the chemical mechanical polishing and the electrolytic plating are completed.
【００５８】このようにして、研磨スラリー供給管２３
と基板保持ヘッド２５との間に流れる電流値ひいては抵
抗値を算出することにより、化学機械研磨の終点を検出
することができる。Thus, the polishing slurry supply pipe 23
By calculating the value of the current flowing between the substrate holding head 25 and the resistance value, the end point of the chemical mechanical polishing can be detected.
【００５９】尚、第２の基板の研磨方法は、電解メッキ
と化学機械研磨とを同時に行ないながら、研磨スラリー
供給管２３と基板保持ヘッド２５との間に流れる電流値
ひいては抵抗値を算出して化学機械研磨の終点を検出し
たが、これに代えて、電解メッキを行なわずに化学機械
研磨のみを行ないながら、電流値ひいては抵抗値を算出
することにより、化学機械研磨の終点を検出することも
できる。In the second substrate polishing method, the value of the current flowing between the polishing slurry supply pipe 23 and the substrate holding head 25, that is, the resistance value, is calculated while simultaneously performing the electrolytic plating and the chemical mechanical polishing. Instead of detecting the end point of chemical mechanical polishing, it is also possible to detect the end point of chemical mechanical polishing by calculating the current value and thus the resistance value while performing only chemical mechanical polishing without electrolytic plating. it can.
【００６０】（第３の基板の研磨方法）以下、第２の実
施形態に係る基板の研磨装置を用いて行なう、第３の基
板の研磨方法について、図８（ａ）〜（ｄ）を参照しな
がら説明する。(Third Substrate Polishing Method) Hereinafter, a third substrate polishing method performed by using the substrate polishing apparatus according to the second embodiment will be described with reference to FIGS. 8 (a) to 8 (d). I will explain while.
【００６１】まず、図８（ａ）に示すように、シリコン
ウェハ３０（図８（ａ）〜（ｄ）においては図示を省略
している。）の上に形成された絶縁膜３１に細幅の配線
用凹状溝４１及び広幅の配線用凹状溝４２を形成した
後、絶縁膜３１の上に全面に亘って例えばＴｉＮよりな
るバリア層３２を堆積し、その後、バリア層３２の上に
全面に亘って銅膜３３を堆積する。次に、銅膜３３に対
して熱処理を施してリフローすることにより、銅膜３３
を細幅の配線用凹状溝４１及び広幅の配線用凹状溝４２
の底部の隅にまで充填する。尚、溝パターン密集領域及
び溝幅の大きいパターン領域の意味については、図１６
（ａ）に示した従来の基板の研磨方法と同様である。First, as shown in FIG. 8A, an insulating film 31 formed on a silicon wafer 30 (not shown in FIGS. 8A to 8D) has a narrow width. After forming the wiring concave groove 41 and the wide wiring concave groove 42, a barrier layer 32 made of, for example, TiN is deposited over the entire surface of the insulating film 31 and then over the entire surface of the barrier layer 32. A copper film 33 is deposited over the entire surface. Next, the copper film 33 is subjected to a heat treatment and is reflowed, so that the copper film 33 is formed.
The narrow groove 41 for wiring and the concave groove 42 for wide wiring
Fill to the bottom corner of the. The meaning of the dense groove pattern region and the pattern region having a large groove width is described in FIG.
This is the same as the conventional substrate polishing method shown in FIG.
【００６２】次に、研磨スラリー供給管２３から第１の
実施形態に係る研磨スラリー１０を回転している研磨パ
ッド２１の上に供給して銅膜３３に対して化学機械研磨
を行なうと共に、直流電圧源２６から研磨スラリー供給
管２３に正の電圧を印加し且つ基板保持ヘッド２５に負
の電圧を印加して銅膜３３に対して銅の電解メッキを施
す。Next, the polishing slurry 10 according to the first embodiment is supplied from the polishing slurry supply pipe 23 onto the rotating polishing pad 21 to perform the chemical mechanical polishing on the copper film 33 and the direct current. A positive voltage is applied to the polishing slurry supply pipe 23 from the voltage source 26 and a negative voltage is applied to the substrate holding head 25 to perform copper electrolytic plating on the copper film 33.
【００６３】このようにすると、図８（ｂ）に示すよう
に、化学機械研磨の開始当初から銅の電解メッキを行な
っているため、銅膜３３の表面に銅のメッキ層４３が大
きく成長するので、広幅の配線用凹状溝４２に堆積され
た銅膜３３及びメッキ層４３に発生するディッシング
は、第１の基板の研磨方法に比べて小さい。In this way, as shown in FIG. 8B, since copper electroplating has been performed since the beginning of the chemical mechanical polishing, the copper plating layer 43 grows largely on the surface of the copper film 33. Therefore, dishing generated in the copper film 33 and the plating layer 43 deposited in the wide wiring concave groove 42 is smaller than that in the first substrate polishing method.
【００６４】従って、広幅の配線用凹状溝４２に堆積さ
れている銅膜３３及びメッキ層４３の表面高さは、絶縁
膜３１の凸部３１ａの表面高さよりも若干低いが、絶縁
膜３１の凸部３１ａの表面高さに大きく接近するので、
表面の段差は大きく緩和される。また、細幅の配線用凹
状溝４１に堆積された銅膜３３及びメッキ層４３は、絶
縁膜３１の凸部３１ａ上の銅膜３３と同じ高さになる。Therefore, the surface heights of the copper film 33 and the plating layer 43 deposited in the wide wiring concave groove 42 are slightly lower than the surface height of the projections 31 a of the insulating film 31, Because it is very close to the surface height of the projection 31a,
The surface step is greatly reduced. Further, the copper film 33 and the plating layer 43 deposited in the narrow wiring concave groove 41 have the same height as the copper film 33 on the convex portion 31 a of the insulating film 31.
【００６５】その後、化学機械研磨及び電解メッキを継
続すると、図８（ｃ）に示すように、広幅の配線用凹状
溝４２に堆積されている銅膜３３及びメッキ層３３の表
面高さは絶縁膜３１の凸部３１ａの表面高さと同等とな
る。Thereafter, when the chemical mechanical polishing and the electrolytic plating are continued, as shown in FIG. 8C, the surface heights of the copper film 33 and the plating layer 33 deposited in the wide wiring concave groove 42 are insulated. This is equivalent to the surface height of the projection 31a of the film 31.
【００６６】さらに、化学機械研磨及び電解メッキを継
続し、絶縁膜３１が露出した段階で化学機械研磨及び電
解メッキを終了すると、図８（ｄ）に示すように、細幅
の配線用凹状溝４１に堆積される細幅の埋め込み配線４
５と広幅の配線用凹状溝４２に堆積される広幅の埋め込
み配線４６と絶縁膜３１の凸部３１ａの高さとは等しく
なる。Further, when the chemical mechanical polishing and the electrolytic plating are continued, and the chemical mechanical polishing and the electrolytic plating are completed when the insulating film 31 is exposed, as shown in FIG. Narrow embedded wiring 4 deposited on 41
5 and the height of the wide buried wiring 46 deposited in the wide wiring concave groove 42 and the height of the convex portion 31 a of the insulating film 31 are equal.
【００６７】以上説明したように、第３の基板の研磨方
法によると、銅膜３３に対して最初から化学機械研磨と
電解メッキとを並行して行なうので、溝パターン密集領
域の細幅の埋め込み配線４５及び広幅の埋め込み配線４
６の表面高さと、絶縁膜３１の表面高さとを確実に等し
くすることができる。As described above, according to the third substrate polishing method, since the chemical mechanical polishing and the electrolytic plating are performed in parallel on the copper film 33 from the beginning, the narrow width of the groove pattern dense region is buried. Wiring 45 and wide embedded wiring 4
6 and the surface height of the insulating film 31 can be reliably equalized.
【００６８】尚、銅膜に対して銅の電解メッキを行なう
タイミングとしては、化学機械研磨の開始と同時でもよ
いが、絶縁膜３１の凸部３１ａの上の銅膜３３の膜厚が
初期膜厚の８０％以上であるときに行なってもよい。こ
のようにすると、広幅の埋め込み配線４６の表面高さ
と、絶縁膜３１の表面高さとを確実に等しくすることが
できる。The timing of performing the electrolytic plating of copper on the copper film may be at the same time as the start of the chemical mechanical polishing, but the thickness of the copper film 33 on the convex portion 31a of the insulating film 31 may be different from that of the initial film. This may be performed when the thickness is 80% or more. This ensures that the surface height of the wide buried wiring 46 and the surface height of the insulating film 31 can be made equal.
【００６９】また、第１〜第３の基板の研磨方法におい
ては、研磨スラリー１０に正の金属イオンである銅イオ
ンを含有させたが、これに代えて、研磨スラリー１０に
負の金属イオンを含有させる場合には、研磨スラリー供
給管２３に負の電圧を印加する一方、基板保持ヘッド２
５に正の電圧を印加する。In the first to third substrate polishing methods, the polishing slurry 10 contains copper ions, which are positive metal ions, but instead, the polishing slurry 10 contains negative metal ions. In the case of containing, while applying a negative voltage to the polishing slurry supply pipe 23, the substrate holding head 2
A positive voltage is applied to 5.
【００７０】（第３の実施形態）図９は本発明の第３の
実施形態に係る基板の研磨装置の概略構成を示してお
り、図９に示すように、回転運動をする定盤２０の上に
研磨パッド２１が設けられており、該研磨パッド２１の
上方に、研磨パッド２１の上面に第１の実施形態に係る
研磨スラリー１０を供給する研磨スラリー供給管２３が
設けられている。また、研磨パッド２１の上方には、被
研磨基板２４を保持すると共に保持した被研磨基板２４
を研磨パッド２１に押し付ける基板保持ヘッド２５が上
下動可能に設けられている。(Third Embodiment) FIG. 9 shows a schematic configuration of an apparatus for polishing a substrate according to a third embodiment of the present invention. As shown in FIG. A polishing pad 21 is provided thereon, and a polishing slurry supply pipe 23 for supplying the polishing slurry 10 according to the first embodiment to the upper surface of the polishing pad 21 is provided above the polishing pad 21. Above the polishing pad 21, the substrate 24 to be polished is held and the substrate 24 to be polished held is held.
The substrate holding head 25 for pressing the substrate against the polishing pad 21 is provided to be vertically movable.
【００７１】第３の実施形態の特徴として、研磨スラリ
ー供給管２３と研磨パッド２１との間に、研磨スラリー
供給管２３から研磨パッド２１の上に供給される研磨ス
ラリー１０に接触するように、チタン等の導電材料より
なる棒状の導電体５１が設けられており、該導電体５１
の先端部は研磨スラリー１０との接触面積が大きくなる
ように球状に形成されている。As a feature of the third embodiment, between the polishing slurry supply pipe 23 and the polishing pad 21, the polishing slurry 10 supplied from the polishing slurry supply pipe 23 onto the polishing pad 21 is brought into contact. A rod-shaped conductor 51 made of a conductive material such as titanium is provided.
Is formed in a spherical shape so that the contact area with the polishing slurry 10 is increased.
【００７２】また、導電体５１と基板保持ヘッド２５と
の間には、直流電圧源２６及び電流計２７が直列に接続
されており、直流電圧源２６、導電体５１、研磨スラリ
ー１０、銅膜３３、基板保持ヘッド２５及び電流計２７
の間で閉回路が形成されている。A DC voltage source 26 and an ammeter 27 are connected in series between the conductor 51 and the substrate holding head 25. The DC voltage source 26, the conductor 51, the polishing slurry 10, the copper film 33, substrate holding head 25 and ammeter 27
A closed circuit is formed between them.
【００７３】第３の実施形態に係る基板の研磨装置によ
ると、銅膜３３に対する化学機械研磨を行ないながら、
直流電圧源２６から導電体５１に正の電圧を印加し且つ
基板保持ヘッド２５に負の電圧を印加して銅膜３３に対
して銅の電解メッキを施すことができる。また、電流計
２７により、導電体５１と基板保持ヘッド２５との間に
流れる電流の大きさを検出することができる。According to the substrate polishing apparatus according to the third embodiment, while performing the chemical mechanical polishing on the copper film 33,
By applying a positive voltage from the DC voltage source 26 to the conductor 51 and applying a negative voltage to the substrate holding head 25, the copper film 33 can be subjected to copper electrolytic plating. Further, the magnitude of the current flowing between the conductor 51 and the substrate holding head 25 can be detected by the ammeter 27.
【００７４】従って、第３の実施形態に係る基板の研磨
装置を用いて、前記の第１〜第３の基板の研磨方法を確
実に実行することができる。Therefore, the first to third substrate polishing methods can be reliably executed by using the substrate polishing apparatus according to the third embodiment.
【００７５】（第４の実施形態）図１０は本発明の第４
の実施形態に係る基板の研磨装置の概略構成を示してお
り、図１０に示すように、回転運動をする定盤２０の上
に研磨パッド２１が設けられており、該研磨パッド２１
の上方に、研磨パッド２１の上面に第１の実施形態に係
る研磨スラリー１０を供給する研磨スラリー供給管２３
が設けられている。また、研磨パッド２１の上方には、
被研磨基板２４を保持すると共に保持した被研磨基板２
４を研磨パッド２１に押し付ける基板保持ヘッド２５が
上下動可能に設けられている。(Fourth Embodiment) FIG. 10 shows a fourth embodiment of the present invention.
FIG. 10 shows a schematic configuration of a substrate polishing apparatus according to the embodiment. As shown in FIG. 10, a polishing pad 21 is provided on a rotating platen 20.
Polishing slurry supply pipe 23 for supplying the polishing slurry 10 according to the first embodiment to the upper surface of the polishing pad 21
Is provided. In addition, above the polishing pad 21,
The substrate to be polished 2 which holds and holds the substrate to be polished 24
A substrate holding head 25 for pressing the substrate 4 against the polishing pad 21 is provided to be vertically movable.
【００７６】第４の実施形態の特徴として、回転する研
磨パッド２１の周縁部と接触しながら回転する導電性材
料よりなるローラ５２ａと、該ローラ５２ａを回転自在
に保持する導電性材料よりなるローラ保持体５２ｂとか
ら構成されるローラ部材５２が設けられている。これに
より、ローラ部材５２のローラ５２ａは、研磨パッド２
１の上に供給される研磨スラリー１０と接触することが
できる。A feature of the fourth embodiment is that a roller 52a made of a conductive material that rotates while being in contact with the periphery of the rotating polishing pad 21 and a roller made of a conductive material that rotatably holds the roller 52a A roller member 52 including a holding body 52b is provided. As a result, the roller 52a of the roller member 52 is
1 can be brought into contact with the polishing slurry 10 supplied on top.
【００７７】また、ローラ部材５２のローラ保持体５１
ｂと基板保持ヘッド２５との間には、直流電圧源２６及
び電流計２７が直列に接続されており、直流電圧源２
６、ローラ部材５２、研磨スラリー１０、銅膜３３、基
板保持ヘッド２５及び電流計２７の間で閉回路が形成さ
れている。The roller holder 51 of the roller member 52
b and a substrate holding head 25, a DC voltage source 26 and an ammeter 27 are connected in series.
6, a closed circuit is formed between the roller member 52, the polishing slurry 10, the copper film 33, the substrate holding head 25, and the ammeter 27.
【００７８】第４の実施形態に係る基板の研磨装置によ
ると、銅膜３３に対する化学機械研磨を行ないながら、
直流電圧源２６からローラ部材５２に正の電圧を印加し
且つ基板保持ヘッド２５に負の電圧を印加して、銅膜３
３に対して銅の電解メッキを施すことができる。また、
電流計２７により、ローラ部材５２と基板保持ヘッド２
５との間に流れる電流の大きさを検出することができ
る。According to the substrate polishing apparatus according to the fourth embodiment, while performing the chemical mechanical polishing on the copper film 33,
By applying a positive voltage from the DC voltage source 26 to the roller member 52 and applying a negative voltage to the substrate holding head 25, the copper film 3
3 can be electroplated with copper. Also,
The roller member 52 and the substrate holding head 2 are
5 can be detected.
【００７９】従って、第４の実施形態に係る基板の研磨
装置を用いて、前記の第１〜第３の基板の研磨方法を確
実に実行することができる。Therefore, the above-described first to third substrate polishing methods can be reliably executed by using the substrate polishing apparatus according to the fourth embodiment.
【００８０】（第５の実施形態）図１１は本発明の第５
の実施形態に係る基板の研磨装置の概略構成を示してお
り、図１１に示すように、回転運動をする定盤２０の上
に研磨パッド２１が設けられており、該研磨パッド２１
の上方に、研磨パッド２１の上面に第１の実施形態に係
る研磨スラリー１０を供給する研磨スラリー供給管２３
が設けられている。また、研磨パッド２１の上方には、
被研磨基板２４を保持すると共に保持した被研磨基板２
４を研磨パッド２１に押し付ける基板保持ヘッド２５が
上下動可能に設けられている。(Fifth Embodiment) FIG. 11 shows a fifth embodiment of the present invention.
FIG. 11 shows a schematic configuration of a substrate polishing apparatus according to the embodiment. As shown in FIG. 11, a polishing pad 21 is provided on a rotating platen 20.
Polishing slurry supply pipe 23 for supplying the polishing slurry 10 according to the first embodiment to the upper surface of the polishing pad 21
Is provided. In addition, above the polishing pad 21,
The substrate to be polished 2 which holds and holds the substrate to be polished 24
A substrate holding head 25 for pressing the substrate 4 against the polishing pad 21 is provided to be vertically movable.
【００８１】第５の実施形態の特徴として、基板保持ヘ
ッド２５の表面には絶縁性被膜５３を介して導電性被膜
５４が設けられており、該導電性被膜５４は、研磨パッ
ド２１の上に供給される研磨スラリー１０と接触するこ
とができる。As a feature of the fifth embodiment, a conductive film 54 is provided on the surface of the substrate holding head 25 via an insulating film 53, and the conductive film 54 is placed on the polishing pad 21. It can come into contact with the supplied polishing slurry 10.
【００８２】また、導電性被膜５４と基板保持ヘッド２
５との間には、直流電圧源２６及び電流計２７が直列に
接続されており、直流電圧源２６、導電性被膜５４、研
磨スラリー１０、銅膜３３、基板保持ヘッド２５及び電
流計２７の間で閉回路が形成されている。The conductive film 54 and the substrate holding head 2
5, a DC voltage source 26 and an ammeter 27 are connected in series, and the DC voltage source 26, the conductive film 54, the polishing slurry 10, the copper film 33, the substrate holding head 25, and the ammeter 27 are connected to each other. A closed circuit is formed between them.
【００８３】第５の実施形態に係る基板の研磨装置によ
ると、銅膜３３に対する化学機械研磨を行ないながら、
直流電圧源２６から導電性被膜５４に正の電圧を印加し
且つ基板保持ヘッド２５に負の電圧を印加して、銅膜３
３に対して銅の電解メッキを施すことができる。また、
電流計２７により、導電性被膜５４と基板保持ヘッド２
５との間に流れる電流の大きさを検出することができ
る。According to the substrate polishing apparatus of the fifth embodiment, while performing the chemical mechanical polishing for the copper film 33,
By applying a positive voltage from the DC voltage source 26 to the conductive film 54 and applying a negative voltage to the substrate holding head 25, the copper film 3
3 can be electroplated with copper. Also,
The conductive film 54 and the substrate holding head 2 are measured by the ammeter 27.
5 can be detected.
【００８４】従って、第５の実施形態に係る基板の研磨
装置を用いて、前記の第１〜第３の基板の研磨方法を確
実に実行することができる。Therefore, the first to third substrate polishing methods can be reliably executed by using the substrate polishing apparatus according to the fifth embodiment.
【００８５】（第６の実施形態）図１２は本発明の第６
の実施形態に係る基板の研磨装置の概略構成を示し、図
１３は第６の実施形態に係る基板の研磨装置における研
磨パッド２１の構造を模式的に示している。(Sixth Embodiment) FIG. 12 shows a sixth embodiment of the present invention.
13 shows a schematic configuration of a substrate polishing apparatus according to the sixth embodiment, and FIG. 13 schematically shows a structure of a polishing pad 21 in the substrate polishing apparatus according to the sixth embodiment.
【００８６】図１２に示すように、回転運動をする定盤
２０の上に導電性の研磨パッド２１が設けられており、
該研磨パッド２１の上方に、研磨パッド２１の上面に第
１の実施形態に係る研磨スラリー１０を供給する研磨ス
ラリー供給管２３が設けられている。また、研磨パッド
２１の上方には、被研磨基板２４を保持すると共に保持
した被研磨基板２４を研磨パッド２１に押し付ける基板
保持ヘッド２５が上下動可能に設けられている。As shown in FIG. 12, a conductive polishing pad 21 is provided on a surface plate 20 which makes a rotational movement.
Above the polishing pad 21, a polishing slurry supply pipe 23 for supplying the polishing slurry 10 according to the first embodiment to the upper surface of the polishing pad 21 is provided. Above the polishing pad 21, a substrate holding head 25 that holds the substrate to be polished 24 and presses the held substrate 24 to be polished against the polishing pad 21 is provided to be vertically movable.
【００８７】第６の実施形態の特徴として、図１３に示
すように、導電性の研磨パッド２１は、炭素の重合体よ
りなるシート状体５５と、該シート状体５５の内部に散
在する導電性粒子５６とから構成されている。As a feature of the sixth embodiment, as shown in FIG. 13, the conductive polishing pad 21 is composed of a sheet 55 made of a polymer of carbon and conductive particles scattered inside the sheet 55. And the conductive particles 56.
【００８８】また、導電性の研磨パッド２１と基板保持
ヘッド２５との間には、直流電圧源２６及び電流計２７
が直列に接続されており、直流電圧源２６、研磨パッド
２１、研磨スラリー１０、銅膜３３、基板保持ヘッド２
５及び電流計２７の間で閉回路が形成されている。A DC voltage source 26 and an ammeter 27 are provided between the conductive polishing pad 21 and the substrate holding head 25.
Are connected in series, the DC voltage source 26, the polishing pad 21, the polishing slurry 10, the copper film 33, the substrate holding head 2
5 and the ammeter 27 form a closed circuit.
【００８９】第６の実施形態に係る基板の研磨装置によ
ると、銅膜３３に対する化学機械研磨を行ないながら、
直流電圧源２６から研磨パッド２１に正の電圧を印加し
且つ基板保持ヘッド２５に負の電圧を印加して、銅膜３
３に対して銅の電解メッキを施すことができる。また、
電流計２７により、研磨パッド２１と基板保持ヘッド２
５との間に流れる電流の大きさを検出することができ
る。According to the substrate polishing apparatus of the sixth embodiment, while performing the chemical mechanical polishing on the copper film 33,
By applying a positive voltage from the DC voltage source 26 to the polishing pad 21 and applying a negative voltage to the substrate holding head 25, the copper film 3
3 can be electroplated with copper. Also,
With the ammeter 27, the polishing pad 21 and the substrate holding head 2
5 can be detected.
【００９０】従って、第６の実施形態に係る基板の研磨
装置を用いて、前記の第１〜第３の基板の研磨方法を確
実に実行することができる。Therefore, the first to third substrate polishing methods can be reliably executed by using the substrate polishing apparatus according to the sixth embodiment.
【００９１】[0091]
【発明の効果】本発明の研磨スラリーによると、金属膜
を構成する金属と同種の金属のイオンが含有されている
ため、金属膜に金属のイオンと逆極性の電圧を印加する
ことにより、金属膜の表面に研磨スラリーに含有されて
いる金属のイオンよりなるメッキ層を形成することがで
きる。金属膜の凸状部においてはメッキ層は速やかに研
磨される一方、金属膜の凹状部においてはメッキ層は研
磨され難いため、埋め込み配線が密集していたり又は埋
め込み配線の配線幅が広いために金属膜が凹状になり易
い領域に選択的にメッキ層を形成できるので、埋め込み
配線が密集している領域に生じるエロージョン及び埋め
込み配線の配線幅が広い領域に生じるディッシングを抑
制することができる。According to the polishing slurry of the present invention, since ions of the same kind of metal as the metal constituting the metal film are contained, by applying a voltage having a polarity opposite to that of the metal ions to the metal film, A plating layer made of metal ions contained in the polishing slurry can be formed on the surface of the film. In the convex portion of the metal film, the plating layer is quickly polished, while in the concave portion of the metal film, the plating layer is hard to be polished, so that the embedded wiring is dense or the wiring width of the embedded wiring is wide. Since the plating layer can be selectively formed in a region where the metal film is likely to be concave, it is possible to suppress erosion that occurs in a region where the embedded wiring is dense and dishing that occurs in a region where the wiring width of the embedded wiring is wide.
【００９２】本発明の基板の研磨装置によると、研磨ス
ラリー供給管から研磨パッドの上に供給される研磨スラ
リーに金属膜を構成する金属と同種の金属のイオンが含
有されていると共に、逆極性電圧供給源により、基板保
持ヘッドにおける基板の金属膜と接触する部位に設けら
れたヘッド導電部に金属のイオンと逆極性の電圧を印加
できるため、金属膜の表面に研磨スラリーに含有されて
いる金属のイオンよりなるメッキ層を形成することがで
きる。According to the substrate polishing apparatus of the present invention, the polishing slurry supplied from the polishing slurry supply pipe onto the polishing pad contains ions of the same kind of metal as the metal constituting the metal film and has the opposite polarity. Since the voltage supply source can apply a voltage having a polarity opposite to that of metal ions to the head conductive portion provided at a portion of the substrate holding head that comes into contact with the metal film, the polishing slurry is contained on the surface of the metal film. A plating layer made of metal ions can be formed.
【００９３】従って、埋め込み配線が密集している領域
に生じるエロージョン及び埋め込み配線の配線幅が広い
領域に生じるディッシングを抑制して、埋め込み配線の
表面高さを均一化できるので、配線抵抗のバラツキを減
少させて埋め込み配線の信頼性を向上させることができ
る。Therefore, it is possible to suppress the erosion that occurs in the region where the embedded wirings are densely formed and the dishing that occurs in the region where the wiring width of the embedded wiring is wide, and to make the surface height of the embedded wiring uniform, thereby reducing the variation in the wiring resistance. It is possible to improve the reliability of the buried wiring by reducing the number.
【００９４】本発明の基板の研磨装置が、研磨スラリー
供給管に設けられた供給管導電部と、該供給管導電部に
金属のイオンと同極性の電圧を印加する同極性電圧供給
源とを備えていると、研磨スラリー供給管から研磨パッ
ド上に供給される研磨スラリーに含まれている金属イオ
ンを、該金属イオンと同極性の電圧によって金属膜の方
に速やかに移動させることができるので、金属膜の表面
に金属イオンよりなるメッキ層を良好に形成することが
できる。A polishing apparatus for a substrate according to the present invention comprises a supply pipe conductive section provided in a polishing slurry supply pipe, and a same-polarity voltage supply source for applying a voltage of the same polarity as metal ions to the supply pipe conductive section. With such a configuration, metal ions contained in the polishing slurry supplied from the polishing slurry supply pipe onto the polishing pad can be quickly moved toward the metal film by a voltage having the same polarity as the metal ions. In addition, a plating layer made of metal ions can be favorably formed on the surface of the metal film.
【００９５】本発明の基板の研磨装置が、研磨スラリー
供給管から研磨パッドの上に流下する研磨スラリーと接
触する導電部材と、該導電部材に金属のイオンと同極性
の電圧を印加する同極性電圧供給源とを備えていると、
研磨スラリー供給管から研磨パッド上に供給される研磨
スラリーに含まれている金属イオンを、該金属イオンと
同極性の電圧によって金属膜の方に速やかに移動させる
ことができるので、金属膜の表面に金属イオンよりなる
メッキ層を良好に形成することができる。A polishing apparatus for a substrate according to the present invention comprises a conductive member in contact with a polishing slurry flowing down from a polishing slurry supply pipe onto a polishing pad, and a same polarity for applying a voltage of the same polarity as metal ions to the conductive member. With a voltage supply,
The metal ions contained in the polishing slurry supplied from the polishing slurry supply pipe onto the polishing pad can be promptly moved toward the metal film by a voltage having the same polarity as the metal ions. The plating layer made of metal ions can be formed satisfactorily.
【００９６】本発明の基板の研磨装置が、研磨パッド上
に拡がる研磨スラリーと接触する導電部材と、該導電部
材に金属のイオンと同極性の電圧を印加する同極性電圧
供給源とを備えていると、研磨パッド上に拡がる研磨ス
ラリーに含まれている金属イオンを、該金属イオンと同
極性の電圧によって金属膜の方に速やかに移動させるこ
とができるので、金属膜の表面に金属イオンよりなるメ
ッキ層を良好に形成することができる。The substrate polishing apparatus of the present invention includes a conductive member that comes into contact with a polishing slurry spread on a polishing pad, and a voltage supply source of the same polarity that applies a voltage of the same polarity as metal ions to the conductive member. Metal ions contained in the polishing slurry spread on the polishing pad can be quickly moved toward the metal film by a voltage having the same polarity as the metal ions, so that the metal ions are A good plated layer can be formed.
【００９７】本発明の基板の研磨装置が、ヘッド導電部
と絶縁され且つ研磨パッド上に拡がる研磨スラリーと接
触する導電性被膜と、該導電性被膜に金属のイオンと同
極性の電圧を印加する同極性電圧供給源とを備えている
と、研磨パッド上に拡がる研磨スラリーに含まれている
金属イオンを、該金属イオンと同極性の電圧によって金
属膜の方に速やかに移動させることができるので、金属
膜の表面に金属イオンよりなるメッキ層を良好に形成す
ることができる。A polishing apparatus for a substrate according to the present invention applies a conductive film insulated from a conductive portion of a head and in contact with a polishing slurry spread on a polishing pad, and applies a voltage having the same polarity as metal ions to the conductive film. With the same polarity voltage supply source, metal ions contained in the polishing slurry spread on the polishing pad can be quickly moved toward the metal film by a voltage of the same polarity as the metal ions. In addition, a plating layer made of metal ions can be favorably formed on the surface of the metal film.
【００９８】本発明の基板の研磨装置において、研磨パ
ッドが導電性材料よりなり、研磨パッドに金属のイオン
と同極性の電圧を印加する同極性電圧供給源を備えてい
ると、研磨パッド上に拡がる研磨スラリーに含まれてい
る金属イオンを、該金属イオンと同極性の電圧によって
金属膜の方に速やかに移動させることができるので、金
属膜の表面に金属イオンよりなるメッキ層を良好に形成
することができる。In the substrate polishing apparatus of the present invention, if the polishing pad is made of a conductive material and the polishing pad is provided with the same polarity voltage supply for applying a voltage of the same polarity as that of metal ions, The metal ions contained in the expanding polishing slurry can be promptly moved toward the metal film by a voltage having the same polarity as the metal ions, so that a plating layer made of metal ions can be favorably formed on the surface of the metal film. can do.
【００９９】この場合、研磨パッドが、多数の導電性の
微粒子体と、該多数の微粒子体を一体化する炭素の重合
体とからと、導電性材料よりなる研磨パッドを簡易且つ
確実に得ることができる。In this case, the polishing pad can easily and reliably obtain a polishing pad made of a conductive material from a large number of conductive fine particles and a polymer of carbon which integrates the large number of fine particles. Can be.
【０１００】本発明の基板の研磨方法によると、研磨工
程において金属膜の表面が化学機械研磨されるため金属
膜の膜厚は薄くなるが、メッキ工程において金属膜の表
面にメッキ層が形成されるため、埋め込み配線が密集し
ている領域に生じるエロージョン及び埋め込み配線の配
線幅が広い領域に生じるディッシングが抑制され、埋め
込み配線の表面高さが均一化されるので、配線抵抗のバ
ラツキが減少し、これにより、埋め込み配線の信頼性が
向上する。また、リソグラフィにおける焦点深度のマー
ジンを確保することができる。According to the substrate polishing method of the present invention, the thickness of the metal film is reduced because the surface of the metal film is chemically and mechanically polished in the polishing step, but the plating layer is formed on the surface of the metal film in the plating step. Therefore, erosion that occurs in a region where the embedded wiring is dense and dishing that occurs in a region where the embedded wiring has a large wiring width are suppressed, and the surface height of the embedded wiring is made uniform, so that variation in wiring resistance is reduced. Thereby, the reliability of the embedded wiring is improved. Further, a margin of the depth of focus in lithography can be secured.
【０１０１】本発明の基板の研磨方法が、測定された電
流値又は抵抗値の変化量に基づいて研磨工程の終点検出
を行なう終点検出工程を備えていると、化学機械研磨の
終点を簡易且つ確実に検出することができる。If the method for polishing a substrate of the present invention includes an end point detecting step of detecting the end point of the polishing step based on the measured change in the current value or the resistance value, the end point of the chemical mechanical polishing can be simply and easily determined. It can be detected reliably.
【０１０２】本発明の基板の研磨方法において、メッキ
工程を、金属膜の膜厚が初期膜厚の８０％〜１０％にな
ったときに開始すると、化学機械研磨の効率が向上する
ので、スループットを向上させることができる。In the substrate polishing method of the present invention, when the plating step is started when the thickness of the metal film becomes 80% to 10% of the initial film thickness, the efficiency of chemical mechanical polishing is improved. Can be improved.
【０１０３】本発明の基板の研磨方法において、メッキ
工程を、金属膜の膜厚が初期膜厚の１００％〜８０％に
なったときに開始すると、化学機械研磨と電解メッキと
をほぼ同時に進行させることができるので、埋め込み配
線が密集している領域に生じるエロージョン及び埋め込
み配線の配線幅が広い領域に生じるディッシングを確実
に抑制して、埋め込み配線の表面高さが確実に均一化す
ることができる。In the substrate polishing method of the present invention, when the plating step is started when the thickness of the metal film reaches 100% to 80% of the initial film thickness, the chemical mechanical polishing and the electrolytic plating proceed almost simultaneously. Therefore, it is possible to reliably suppress erosion that occurs in a region where the embedded wiring is dense and dishing that occurs in a region where the wiring width of the embedded wiring is wide, and to ensure a uniform surface height of the embedded wiring. it can.
【図１】本発明の第１の実施形態に係る研磨スラリーを
示す模式図である。FIG. 1 is a schematic diagram showing a polishing slurry according to a first embodiment of the present invention.
【図２】本発明の第２の実施形態に係る基板の研磨装置
の概略断面図である。FIG. 2 is a schematic sectional view of a substrate polishing apparatus according to a second embodiment of the present invention.
【図３】本発明の第２の実施形態に係る基板の研磨装置
の要部を示す、図２における一点鎖線で囲む部分の拡大
断面図である。FIG. 3 is an enlarged cross-sectional view showing a main part of a substrate polishing apparatus according to a second embodiment of the present invention, showing a portion surrounded by a dashed line in FIG.
【図４】（ａ）〜（ｄ）は、本発明の各実施形態に係る
基板の研磨装置を用いて行なう第１の基板の研磨方法の
各工程を示す断面図である。FIGS. 4A to 4D are cross-sectional views showing steps of a first substrate polishing method performed by using the substrate polishing apparatus according to each embodiment of the present invention.
【図５】（ａ）〜（ｃ）は、本発明の各実施形態に係る
基板の研磨装置を用いて行なう第２の基板の研磨方法の
各工程を示す断面図である。FIGS. 5A to 5C are cross-sectional views showing steps of a second substrate polishing method performed by using the substrate polishing apparatus according to each embodiment of the present invention.
【図６】（ａ）〜（ｃ）は、本発明の各実施形態に係る
基板の研磨装置を用いて行なう第２の基板の研磨方法の
各工程を示す斜視図である。FIGS. 6A to 6C are perspective views showing respective steps of a second substrate polishing method performed using the substrate polishing apparatus according to each embodiment of the present invention.
【図７】本発明の各実施形態に係る基板の研磨装置を用
いて行なう第２の基板の研磨方法における研磨時間と抵
抗値との関係を示す図である。FIG. 7 is a diagram showing a relationship between a polishing time and a resistance value in a second substrate polishing method performed by using the substrate polishing apparatus according to each embodiment of the present invention.
【図８】（ａ）〜（ｄ）は、本発明の各実施形態に係る
基板の研磨装置を用いて行なう第３の基板の研磨方法の
各工程を示す断面図である。FIGS. 8A to 8D are cross-sectional views showing steps of a third substrate polishing method performed by using the substrate polishing apparatus according to each embodiment of the present invention.
【図９】本発明の第３の実施形態に係る基板の研磨装置
の概略断面図である。FIG. 9 is a schematic sectional view of a substrate polishing apparatus according to a third embodiment of the present invention.
【図１０】本発明の第４の実施形態に係る基板の研磨装
置の概略断面図である。FIG. 10 is a schematic sectional view of a substrate polishing apparatus according to a fourth embodiment of the present invention.
【図１１】本発明の第５の実施形態に係る基板の研磨装
置の概略断面図である。FIG. 11 is a schematic sectional view of a substrate polishing apparatus according to a fifth embodiment of the present invention.
【図１２】本発明の第６の実施形態に係る基板の研磨装
置の概略断面図である。FIG. 12 is a schematic sectional view of a substrate polishing apparatus according to a sixth embodiment of the present invention.
【図１３】本発明の第６の実施形態に係る基板の研磨装
置における研磨パッドの構造を示す模式図である。FIG. 13 is a schematic diagram showing a structure of a polishing pad in a substrate polishing apparatus according to a sixth embodiment of the present invention.
【図１４】従来の基板の研磨装置の概略断面図である。FIG. 14 is a schematic sectional view of a conventional substrate polishing apparatus.
【図１５】従来の研磨スラリーを示す模式図である。FIG. 15 is a schematic view showing a conventional polishing slurry.
【図１６】（ａ）〜（ｃ）は、従来の基板の研磨方法の
各工程を示す断面図である。16 (a) to (c) are cross-sectional views showing each step of a conventional substrate polishing method.
１０ 研磨スラリー １１ 水 １２ 砥粒 １３ 酸化剤 １４ 金属のイオン ２０ 定盤 ２１ 研磨パッド ２３ 研磨スラリー供給管 ２４ 被研磨基板 ２５ 基板保持ヘッド ２６ 直流電圧源 ２７ 電流計 ３０ シリコンウェハ ３１ 絶縁膜 ３１ａ 凸部 ３２ バリア層 ３３ 銅膜 ３５ 絶縁体 ４１ 細幅の配線用凹状溝 ４２ 広幅の配線用凹状溝 ４３ メッキ層 ４５ 細幅の埋め込み配線 ４６ 広幅の埋め込み配線 ５１ 導電体 ５２ ローラ部材 ５２ａ ローラ ５２ｂ ローラ保持体 ５３ 絶縁性被膜 ５４ 導電性被膜 ５５ シート状体 ５６ 導電性粒子 DESCRIPTION OF SYMBOLS 10 Polishing slurry 11 Water 12 Abrasives 13 Oxidant 14 Metal ion 20 Surface plate 21 Polishing pad 23 Polishing slurry supply tube 24 Substrate to be polished 25 Substrate holding head 26 DC voltage source 27 Ammeter 30 Silicon wafer 31 Insulating film 31a Convex part Reference Signs List 32 barrier layer 33 copper film 35 insulator 41 narrow wiring concave groove 42 wide wiring concave groove 43 plating layer 45 narrow embedded wiring 46 wide embedded wiring 51 conductor 52 roller member 52a roller 52b roller holder 53 Insulating film 54 Conductive film 55 Sheet-like body 56 Conductive particles
───────────────────────────────────────────────────── フロントページの続き (72)発明者 矢野 敏彦 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Toshihiko Yano 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (12)
る際に用いられる研磨スラリーであって、前記金属膜を
構成する金属と同種の金属のイオンが含有されているこ
とを特徴とする研磨スラリー。1. A polishing slurry used for polishing a metal film by a chemical mechanical polishing method, wherein the polishing slurry contains ions of the same kind of metal as the metal constituting the metal film. .
磨パッドと、 化学機械研磨される金属膜を構成する金属と同種の金属
のイオンが含有されている研磨スラリーを前記研磨パッ
ドの上に供給する研磨スラリー供給管と、 表面に前記金属膜が形成された基板を保持し、保持した
基板の前記金属膜を前記研磨パッドに押し付ける基板保
持ヘッドと、 前記基板保持ヘッドにおける、保持した基板の前記金属
膜と接触する部位に設けられたヘッド導電部と、 前記ヘッド導電部に前記金属のイオンと逆極性の電圧を
印加する逆極性電圧供給源とを備えていることを特徴と
する基板の研磨装置。2. A polishing pad provided on a surface plate which moves in a plane, and a polishing slurry containing ions of the same kind of metal as a metal constituting a metal film to be chemically and mechanically polished is applied to the polishing pad. A polishing slurry supply pipe to be supplied above, a substrate holding head for holding the substrate having the metal film formed on the surface thereof, and pressing the metal film of the held substrate against the polishing pad; A head conductive portion provided on a portion of the substrate that comes into contact with the metal film; and a reverse voltage supply source for applying a voltage having a polarity opposite to that of the metal ions to the head conductive portion. Substrate polishing equipment.
磨スラリーと接触する部位に設けられた供給管導電部
と、 前記供給管導電部に前記金属のイオンと同極性の電圧を
印加する同極性電圧供給源とをさらに備えていることを
特徴とする請求項１に記載の基板の研磨装置。3. A supply pipe conductive section provided at a portion of the polishing slurry supply pipe in contact with the polishing slurry, and a same polarity voltage supply for applying a voltage of the same polarity as the metal ions to the supply pipe conductive section. The substrate polishing apparatus according to claim 1, further comprising a source.
ドとの間に、前記研磨スラリー供給管から前記研磨パッ
ドの上に流下する前記研磨スラリーと接触するように設
けられた導電部材と、 前記導電部材に前記金属のイオンと同極性の電圧を印加
する同極性電圧供給源とをさらに備えていることを特徴
とする請求項１に記載の基板の研磨装置。4. A conductive member provided between the polishing slurry supply pipe and the polishing pad so as to be in contact with the polishing slurry flowing down from the polishing slurry supply pipe onto the polishing pad; 2. The substrate polishing apparatus according to claim 1, further comprising a same-polarity voltage supply source for applying a voltage having the same polarity as the metal ions to the member.
上に拡がる前記研磨スラリーと接触するように設けられ
た導電部材と、 前記導電部材に前記金属のイオンと同極性の電圧を印加
する同極性電圧供給源とをさらに備えていることを特徴
とする請求項１に記載の基板の研磨装置。5. A conductive member provided on the polishing pad so as to be in contact with the polishing slurry spreading on the polishing pad, and a voltage having the same polarity as that of ions of the metal is applied to the conductive member. The substrate polishing apparatus according to claim 1, further comprising a polar voltage supply source.
ド導電部と絶縁され且つ前記研磨パッド上に拡がる前記
研磨スラリーと接触するように設けられた導電性被膜
と、 前記導電性被膜に前記金属のイオンと同極性の電圧を印
加する同極性電圧供給源とをさらに備えていることを特
徴とする請求項１に記載の基板の研磨装置。6. A conductive film provided on a surface of the substrate holding head so as to be in contact with the polishing slurry which is insulated from the head conductive portion and spreads on the polishing pad. The substrate polishing apparatus according to claim 1, further comprising a same-polarity voltage supply source for applying a voltage having the same polarity as the ions.
加する同極性電圧供給源をさらに備えていることを特徴
とする請求項１に記載の基板の研磨装置。7. The polishing pad according to claim 1, wherein the polishing pad is made of a conductive material, and further includes a same polarity voltage supply source for applying a voltage of the same polarity as the metal ions to the polishing pad. An apparatus for polishing a substrate according to the above.
多数の微粒子体と、該多数の微粒子体を一体化する炭素
の重合体とからなることを特徴とする請求項７に記載の
基板の研磨装置。8. The substrate according to claim 7, wherein the polishing pad comprises a plurality of fine particles made of a conductive material, and a carbon polymer that integrates the plurality of fine particles. Polishing equipment.
される金属膜を構成する金属と同種の金属のイオンが含
有されている研磨スラリーを供給するスラリー供給工程
と、 前記金属膜を前記研磨パッドに押し付けて、前記研磨パ
ッドの上に拡がる前記研磨スラリーにより前記金属膜の
表面を化学機械研磨する研磨工程と、 前記金属膜に前記金属のイオンと逆極性の電圧を印加す
ることにより、前記金属膜の表面に前記研磨スラリーに
含有されている金属のイオンよりなるメッキ層を形成す
るメッキ工程とを備えていることを特徴とする基板の研
磨方法。9. A slurry supply step of supplying a polishing slurry containing ions of the same kind of metal as the metal constituting the metal film to be polished on a polishing pad which moves in a plane, and Pressing against a polishing pad, a polishing step of chemically and mechanically polishing the surface of the metal film with the polishing slurry spread on the polishing pad, by applying a voltage having a polarity opposite to that of the metal ions to the metal film, A step of forming a plating layer made of metal ions contained in the polishing slurry on the surface of the metal film.
前記金属膜の抵抗値の変化量を測定し、測定された電流
値又は抵抗値の変化量に基づいて、前記研磨工程の終点
検出を行なう終点検出工程をさらに備えていることを特
徴とする請求項９に記載の基板の研磨方法。10. A method of measuring a current value of a current flowing through the metal film or a change amount of a resistance value of the metal film, and detecting an end point of the polishing process based on the measured current value or a change amount of the resistance value. The method for polishing a substrate according to claim 9, further comprising an end point detecting step to be performed.
いて前記金属膜の膜厚が初期膜厚の８０％〜１０％にな
ったときに開始することを特徴とする請求項９に記載の
基板の研磨方法。11. The substrate according to claim 9, wherein the plating step is started when the thickness of the metal film becomes 80% to 10% of an initial film thickness in the polishing step. Polishing method.
いて前記金属膜の膜厚が初期膜厚の１００％〜８０％に
なったときに開始することを特徴とする請求項９に記載
の基板の研磨方法。12. The substrate according to claim 9, wherein the plating step is started when the thickness of the metal film becomes 100% to 80% of the initial thickness in the polishing step. Polishing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33255297A JP3507678B2 (en) | 1997-12-03 | 1997-12-03 | Polishing slurry, substrate polishing apparatus and substrate polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33255297A JP3507678B2 (en) | 1997-12-03 | 1997-12-03 | Polishing slurry, substrate polishing apparatus and substrate polishing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003390285A Division JP2004149926A (en) | 2003-11-20 | 2003-11-20 | Method of forming embedded wiring |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11165253A true JPH11165253A (en) | 1999-06-22 |
| JP3507678B2 JP3507678B2 (en) | 2004-03-15 |
Family
ID=18256207
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33255297A Expired - Fee Related JP3507678B2 (en) | 1997-12-03 | 1997-12-03 | Polishing slurry, substrate polishing apparatus and substrate polishing method |
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| Country | Link |
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|---|---|---|---|---|
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| KR100650079B1 (en) * | 2000-09-20 | 2006-11-27 | 로무 가부시키가이샤 | Polishing Apparatus and Polishing Pad Useful In Polishing Apparatus and Polishing Method |
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| JP2010003732A (en) * | 2008-06-18 | 2010-01-07 | Adeka Corp | Polishing component for cmp |
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