JPH11163534A - Low-temperature fired multilayer substrate - Google Patents
Low-temperature fired multilayer substrateInfo
- Publication number
- JPH11163534A JPH11163534A JP32680597A JP32680597A JPH11163534A JP H11163534 A JPH11163534 A JP H11163534A JP 32680597 A JP32680597 A JP 32680597A JP 32680597 A JP32680597 A JP 32680597A JP H11163534 A JPH11163534 A JP H11163534A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- multilayer substrate
- low
- conductor
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波領域で使用
する電子回路基板や電子部品等に適用される低温焼成可
能な誘電体磁器組成物で構成された低温焼成多層基板に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature fired multilayer substrate composed of a dielectric ceramic composition which can be fired at a low temperature and which is applied to electronic circuit boards and electronic components used in a high frequency range.
【０００２】[0002]
【従来の技術】低温焼成多層基板としては、基板にイン
ダンタ成分及び容量成分を集中定数的にまたは分布定数
的に形成する導体パターンが形成された共振器や、平行
電極が形成されたコンデンサ、共振回路を複数結合した
フィルタ、それらの機能を内蔵した電子回路基板、内部
導体及び表面導体で所定配線を構成した多層回路基板な
どに用いられる。2. Description of the Related Art As a low-temperature fired multilayer substrate, a resonator in which a conductor pattern for forming an inducer component and a capacitive component in a lumped or distributed constant manner on a substrate, a capacitor in which parallel electrodes are formed, It is used for a filter in which a plurality of circuits are connected, an electronic circuit board having a built-in function thereof, a multilayer circuit board in which a predetermined wiring is formed by internal conductors and surface conductors, and the like.
【０００３】従来、誘電体材料として各種誘電体セラミ
ックスが、共振器、コンデンサ、ブィルタ等の電子部品
に使用されている。そして、近年においては、携帯電話
をはじめとする移動体通信等の発展及び普及に伴い、こ
れらの多層基板を用いた電子部品の需要が増大しつつあ
る。Hitherto, various dielectric ceramics have been used as dielectric materials for electronic components such as resonators, capacitors, filters, and the like. In recent years, with the development and spread of mobile communication such as mobile phones, demand for electronic components using these multilayer substrates has been increasing.
【０００４】電子回路や電子部品に用いるアルミナセラ
ミックを用いた多層基板においては、焼成温度が１１０
０℃以上という高温であったため、基板内部の導体材料
に比較的高融点であるＰｔ、Ｐｄ、Ｗ、Ｍｏ等が使用さ
れていた。これら高融点の導体材料は導通抵抗が大きい
ため、従来の電子回路基抜において、共振回路やインダ
クタンスのＱ値が小さくなってしまい、導体線路の伝送
損失が大きくなる等の問題があった。In a multilayer substrate using alumina ceramic used for electronic circuits and electronic components, the firing temperature is 110
Because of the high temperature of 0 ° C. or higher, Pt, Pd, W, Mo, and the like, which have relatively high melting points, have been used as the conductor material inside the substrate. These conductive materials having a high melting point have a large conduction resistance, and thus have a problem in that the Q value of the resonance circuit and the inductance becomes small and the transmission loss of the conductor line becomes large in the conventional electronic circuit.
【０００５】そこでこのような問題点を解決すべく、導
通抵抗の小さいＡｇ、Ｃｕ等と同時焼成可能な低温焼成
誘電体セラミックスが提案されている。例えば、特開平
８−２０８３３０号公報に開示された誘電体磁器組成物
は、ＭｇＯ、ＣａＯ、ＴｉＯ2 とＢ2 ０2 、Ｌｉ2 ＣＯ
3 からなるものであり、９００〜ｌ０５０℃の比較的低
温焼成可能な材料である。そして、この材料を用いた誘
電体基板にはＡｇやＣｕ等の低融点金属であり、且つ低
導電抵抗の内部導体を同時に焼成できる。そして、誘電
体磁器の比誘電率εｒが１８以上、測定周波数７ＧＨｚ
でのＱ値が２０００以上、かつ共振周波数の温度係数τ
ｆが土４０以内の優れた特性を有し、高周波電子部品の
小型化と高性能化を実現できるものであった。In order to solve such a problem, a low-temperature fired dielectric ceramic which can be co-fired with Ag, Cu or the like having a small conduction resistance has been proposed. For example, the dielectric ceramic composition disclosed in Japanese Patent Laid-Open No. 8-208330 is, MgO, CaO, TiO 2 and B 2 0 2, Li 2 CO
3, which is a material which can be fired at a relatively low temperature of 900 to 1050 ° C. Then, a dielectric substrate made of this material can be simultaneously fired with an internal conductor of a low melting point metal such as Ag or Cu and having a low conductive resistance. Then, the relative permittivity εr of the dielectric ceramic is 18 or more, and the measurement frequency is 7 GHz.
Is 2000 or more and the temperature coefficient τ of the resonance frequency
f has excellent characteristics within the range of 40 soils, and can realize miniaturization and high performance of high-frequency electronic components.
【０００６】[0006]
【発明が解決しようとする課題】しがしながら、移動体
通信機等に末められる小型化、多機能化の要求は止まる
ところがなく、そこに使用される電子回路基板、電子部
品において使われる小型化が求められている。特開平８
−２０８３３０号公報に開示された誘電体磁器組成物
は、低温焼成用としては比較的高い誘電率を有するが、
特にストリップライン型フィルタまたはストリップライ
ン型フィルターを含む電子回路基板においては、小型化
に伴う容量値の減少を抑えることが難しく、更なる小型
化が困難な状況であった。However, the demand for miniaturization and multi-functionality ending in mobile communication devices and the like is continually increasing, and it is used in electronic circuit boards and electronic components used therein. Miniaturization is required. JP 8
The dielectric porcelain composition disclosed in -208330 has a relatively high dielectric constant for low-temperature firing,
In particular, in a stripline type filter or an electronic circuit board including a stripline type filter, it has been difficult to suppress a decrease in capacitance value due to miniaturization, and further miniaturization has been difficult.
【０００７】本発明は上記課題に鑑みて案出されたもの
で、Ａｇ、Ｃｕ等の内部導体と同時焼成可能であると同
時に、小型化に伴う容量値の減少を抑えるために比誘電
率の向上を図り、更なる電子回路基抜、電子部品の小型
化が可能な誘電体磁器組成物を有する低温焼成多層基板
を提供することにある。The present invention has been devised in view of the above-mentioned problems, and can be co-fired with an internal conductor such as Ag or Cu, and at the same time, has a relative permittivity in order to suppress a decrease in capacitance due to miniaturization. It is an object of the present invention to provide a low-temperature fired multilayer substrate having a dielectric ceramic composition capable of improving the performance of an electronic circuit and further reducing the size of an electronic component.
【０００８】[0008]
【課題を解決するための手段】本発明の低温焼成多層基
板は、８００〜１０００℃で焼成可能な誘電体磁器材料
からなる誘電体層を複数積層するとともに、誘電体層間
にＡｇ系導体又はＣｕ系導体の内部導体を配置して成る
低温焼成多層基板において、前記誘電体磁器材料が、金
属元素Ｂａ、Ｔｉ、Ｎｄを含む複合酸化物であって、こ
れらの金属元素の酸化物を一般式ｘＢａＯ・ｙＴｉＯ2
・ｚＮｄ2 Ｏ3 と表した時、ｘ、ｙ、ｚの値が、 ０．１０≦ｘ≦０．２０ ０．６０≦ｙ≦０．７０ ０．１０≦ｚ≦０．２０ （ｘ＋ｙ＋ｚ＝１）で表される主成分１００重量部に対
して、亜鉛含有化合物および硼素含有化合物をそれぞれ
ＺｎＯ、Ｂ2 Ｏ3 換算で合計２．０〜８．０重量部含有
し、更にＬｉ含有化合物を炭酸塩換算で１．５〜５．０
重量部含有してしてことを特徴とする低温焼成多層基板
である。The low-temperature fired multilayer substrate of the present invention comprises a plurality of dielectric layers made of a dielectric ceramic material which can be fired at 800 to 1000 ° C., and an Ag-based conductor or Cu interposed between the dielectric layers. In a low-temperature fired multilayer substrate having an internal conductor of a system conductor disposed therein, the dielectric ceramic material is a composite oxide containing metal elements Ba, Ti, and Nd, and an oxide of these metal elements is represented by a general formula xBaO.・ YTiO 2
When expressed as zNd 2 O 3 , the values of x, y, and z are 0.10 ≦ x ≦ 0.20 0.60 ≦ y ≦ 0.70 0.10 ≦ z ≦ 0.20 (x + y + z = 1 ), The zinc-containing compound and the boron-containing compound are respectively contained in a total of 2.0 to 8.0 parts by weight in terms of ZnO and B 2 O 3 with respect to 100 parts by weight of the main component represented by 1.5 to 5.0 in terms of salt
It is a low-temperature fired multilayer substrate characterized by containing parts by weight.
【０００９】[0009]
【作用】本発明の誘電体基板の材料である誘電体磁器組
成物は、８００〜１０００℃の比較的低温で焼成でき
る。従って、基板材料とともに、低導電抵抗材料のＡｇ
系、Ｃｕ系など同時焼成することだできる。The dielectric ceramic composition as the material of the dielectric substrate of the present invention can be fired at a relatively low temperature of 800 to 1000 ° C. Therefore, together with the substrate material, Ag of the low conductive resistance material is used.
System, Cu system, etc. can be fired simultaneously.
【００１０】また、比誘電率εｒやＱ値が高く、共振周
波数の温度係数τｆが比較的小さくでき、多層基板の小
型化と高性能化を実現できる。Further, the relative dielectric constant εr and Q value are high, the temperature coefficient τf of the resonance frequency can be relatively small, and the miniaturization and high performance of the multilayer substrate can be realized.
【００１１】[0011]
【発明の実施の形態】本発明の低温焼成多層基板を図面
に基づいて詳説する。図１は、マイクロストリップ線路
を用いた低温焼成多層基板の断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS A low-temperature fired multilayer substrate of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view of a low-temperature fired multilayer substrate using a microstrip line.
【００１２】図において、１は複数の誘電体層が積層し
てなる基板であり、２はマイクロストリップ線路、３は
グランド導体、４は配線導体、５はビアホール導体、６
は表面配線導体、７は各種電子部品である。In the figure, 1 is a substrate formed by laminating a plurality of dielectric layers, 2 is a microstrip line, 3 is a ground conductor, 4 is a wiring conductor, 5 is a via hole conductor, 6
Denotes a surface wiring conductor, and 7 denotes various electronic components.
【００１３】積層基板１は、例えば４層の誘電体層１ａ
〜１ｄが積層されて構成されている。この誘電体層１ａ
〜１ｄの層間には、マイクロストップ線路を成す導体
２、グランド導体３、３、所定回路を構成する配線導体
４が形成されている。また、積層基板１の表面には、表
面配線導体６及びチップ抵抗、チップコンデンサ、ＩＣ
チップなどの各種電子部品が実装されている。さらに、
各誘電体層１ａ〜１ｄの層には、各種導体２〜４、６を
接続するためのビアホール導体５が形成されている。The laminated substrate 1 has, for example, four dielectric layers 1a.
To 1d are laminated. This dielectric layer 1a
A conductor 2, which constitutes a microstop line, ground conductors 3, 3, and a wiring conductor 4, which constitutes a predetermined circuit, are formed between the layers 1 to 1d. The surface wiring conductor 6 and the chip resistor, chip capacitor, IC
Various electronic components such as chips are mounted. further,
In each of the dielectric layers 1a to 1d, a via-hole conductor 5 for connecting various conductors 2 to 4 and 6 is formed.
【００１４】上述の各種導体２〜６は、Ａｇを主成分と
した材料、Ｃｕを主成分とした材料からなり、特に、マ
イクロストリップ線路を成す導体２、グランド導体３、
３、配線導体４、ビアホール導体５は、積層基板１と同
時に焼成されて形成される。The above-mentioned various conductors 2 to 6 are made of a material containing Ag as a main component and a material containing Cu as a main component, and in particular, a conductor 2 forming a microstrip line, a ground conductor 3,
3, the wiring conductor 4, and the via-hole conductor 5 are formed by firing simultaneously with the laminated substrate 1.
【００１５】尚、表面配線導体については、基板内部に
形成された導体２〜５と同様に、基板を焼結する前の基
板の表面に印刷形成しておき、同時に焼成してよく、ま
た、焼成された基板の表面に後から焼き付けしても構わ
ない。表面の電子部品素子７のうち、厚膜抵抗体膜など
においても同様である。The surface wiring conductors may be printed and formed on the surface of the substrate before sintering, as in the case of the conductors 2 to 5 formed inside the substrate. It may be baked later on the surface of the baked substrate. The same applies to a thick resistor film among the electronic component elements 7 on the surface.
【００１６】以上のように、上述の多層基板は、少なく
とも基板内部に配置される導体２〜５は、低導電抵抗の
材料であるＡｇ系（Ａｇ単体またはＡｇ合金）やＣｕ系
（Ｃｕ単体またはＣｕ合金）などが使用されている。従
って、配線導体においては、信号の高速化が達成され
る。また、マイクロストップ線路においては、高周波特
性が向上し、全体として、高周波動作に優れた多層基板
となる。As described above, in the above-described multilayer board, at least the conductors 2 to 5 disposed inside the board are made of a material having a low conductive resistance, such as Ag (Ag or Ag alloy) or Cu (Cu or Cu). Cu alloy) is used. Therefore, in the wiring conductor, a high-speed signal is achieved. Further, in the microstop line, the high-frequency characteristics are improved, and the multilayer substrate as a whole is excellent in high-frequency operation.
【００１７】このような構造の多層基板の積層基板を構
成する誘電体層１ａ〜１ｄは、以下のような誘電体磁器
組成物の材料が用いられる。For the dielectric layers 1a to 1d constituting the laminated substrate of the multilayer substrate having such a structure, the following dielectric ceramic composition materials are used.
【００１８】誘電体磁器組成物は、金属元素としてＢ
ａ、Ｔｉ、Ｎｄを含有する複合酸化物であって、これら
の金属元素酸化物を一般式ｘＢａＯ・ｙＴｉＯ2 ・ｚＮ
ｄ2 Ｏ3 と表した時、ｘ、ｙ、ｚの値が０．１０≦ｘ≦
０．２０、０．６０≦ｙ≦０．７０、０．１０≦ｚ≦
０．２０、ｘ＋ｙ＋ｚ＝１．００で表される主成分１０
０重量部に対して、亜鉛含有化合物および硼素含有化合
物をそれぞれＺｎＯ、Ｂ2Ｏ3 換算で合計２．０〜８．
０重畳部含有し、更にＬｉ含有化合物を炭酸塩換算で
１．５〜５．０重量部含有してなるものである。The dielectric porcelain composition contains B as a metal element.
a, Ti, and Nd-containing composite oxide, and these metal element oxides are represented by a general formula xBaO.yTiO 2 .zN
When expressed as d 2 O 3 , the value of x, y, z is 0.10 ≦ x ≦
0.20, 0.60 ≦ y ≦ 0.70, 0.10 ≦ z ≦
0.20, main component 10 represented by x + y + z = 1.00
Relative to 0 parts by weight, the total zinc-containing compounds and boron-containing compounds in each ZnO, B 2 O 3 in terms of 2.0 to 8.
0 part by weight, and 1.5 to 5.0 parts by weight of a Li-containing compound in terms of carbonate.
【００１９】本発明において、組成物におけるＢａＯの
組成比ｘを０．１０≦ｘ≦０．２０、ＴｉＯ2 の組成比
ｙを０．６０≦ｙ≦０．７０としたのは、ＢａＯの含有
率ｘが０．２０より大きくなったり、ＴｉＯ2 の含有率
ｙが０．７０より大きくなると共振周波数の温度係数が
正に大きくなり過ぎてしまう。その結果、多層基板にお
いては、たとえば、フィルタ特性の温度特性を劣化され
てしまう。In the present invention, the composition ratio x of BaO in the composition is 0.10 ≦ x ≦ 0.20 and the composition ratio y of TiO 2 is 0.60 ≦ y ≦ 0.70 because the content of BaO When the ratio x is larger than 0.20 or the TiO 2 content y is larger than 0.70, the temperature coefficient of the resonance frequency becomes too large. As a result, in the multilayer substrate, for example, the temperature characteristics of the filter characteristics are deteriorated.
【００２０】また、ＢａＯの含有率ｘが０．２０より小
さくなると誘電体磁器の誘電率が低くなり、ＴｉＯ2 の
含有率ｙが０．６０より小さくなると緻密な焼成体が得
られなくなる問題が発生する。Further, when the BaO content x is smaller than 0.20, the dielectric constant of the dielectric porcelain decreases, and when the TiO 2 content y is smaller than 0.60, a dense fired body cannot be obtained. Occur.
【００２１】また、Ｎｄ2 Ｏ3 の組成比ｚを０．１０≦
ｚ≦０．２０としたのは、Ｎｄ2 Ｏ3 の組成比ｚが０．
２０より大きくなると誘電率が低くなり、Ｎｄ2 Ｏ3 の
組成比ｚが０．１０より大きくなると、共振周波数の温
度係数が正に大きくなりすぎてしまう問題が発生する。The composition ratio z of Nd 2 O 3 is 0.10 ≦
The reason why z ≦ 0.20 is that the composition ratio z of Nd 2 O 3 is 0.
When it is larger than 20, the dielectric constant becomes low, and when the composition ratio z of Nd 2 O 3 becomes larger than 0.10, there arises a problem that the temperature coefficient of the resonance frequency becomes too large.
【００２２】さらに上記主成分の複合酸化物１００重量
部に対して、亜鉛含有化合物および硼素含有化合物をそ
れぞれＺｎＯ、Ｂ2 Ｏ3 換算で合計２．０〜８．０重量
部含有し、更にＬｉ含有化合物を炭酸塩換算でｌ．５〜
５．０重量部含有したのは、亜鉛含有化合物および硼素
含有化合物をそれぞれＺｎＯ、Ｂ2 Ｏ3 換算で合計が
２．０重量部より小さくなったり、またはＬｉ含有化合
物を炭酸塩換算で１．５重量部より小さいと低温での焼
成が困難となり、ＡｇまたはＣｕとの同時焼成ができな
くなる。Further, the zinc-containing compound and the boron-containing compound are each contained in a total of 2.0 to 8.0 parts by weight in terms of ZnO and B 2 O 3 with respect to 100 parts by weight of the composite oxide of the above-mentioned main component. The compound contained was converted to l. 5-
The content of 5.0 parts by weight is such that the total of the zinc-containing compound and the boron-containing compound is less than 2.0 parts by weight in terms of ZnO and B 2 O 3 , respectively, or the content of the Li-containing compound is 1.0 in terms of carbonate. If the amount is less than 5 parts by weight, firing at low temperature becomes difficult, and simultaneous firing with Ag or Cu cannot be performed.
【００２３】また亜鉛含有化合物及び硼素素含有化合物
をそれぞれＺｎＯ、Ｂ2 Ｏ3 換算で合計が８．０重量部
より大きくなると誘電体磁器の誘電率が低くなり、Ｌｉ
含有化合物を炭酸塩換算で５．０重量部より大きくなる
とＱ値が低くなる問題が発生する。When the total content of the zinc-containing compound and the boron-containing compound exceeds 8.0 parts by weight in terms of ZnO and B 2 O 3 , respectively, the dielectric constant of the dielectric ceramic decreases, and
If the content of the compound is more than 5.0 parts by weight in terms of carbonate, there is a problem that the Q value decreases.
【００２４】硼素含有化合物としては、金属硼素、Ｂ2
Ｏ3 、コレマナイト、ＣａＢ2 Ｏ4などが例示できる。As the boron-containing compound, metallic boron, B 2
O 3 , colemanite, CaB 2 O 4 and the like can be exemplified.
【００２５】尚、本発明においては、誘電特性に悪影響
を及ぼさない範囲でＳｉ、Ｚｎ、Ｍｎ、Ｚｒ等の酸化物
を添加含有してもよく、この場合さらに低温焼成が可能
となる。In the present invention, oxides such as Si, Zn, Mn, and Zr may be added and contained as long as they do not adversely affect the dielectric properties. In this case, firing at a lower temperature is possible.
【００２６】上述の誘電体磁器組成物は、例えば、Ｂａ
ＣＯ3 、ＴｉＯ2 、Ｎｄ2 Ｏ3 の各材料粉末を所定量と
なるように秤量し、混合粉砕し、これを１１００〜１３
００℃の温度で大気中でｌ〜３時間板焼し、得られた仮
焼物（複合酸化物）に、例えば亜鉛化合物としてＺｎ
Ｏ、硼素化合物としてＢ2 Ｏ3 、Ｌｉ2 ＣＯ3 の各粉末
を所定量となるように秤量し、混合粉砕し、プレス成形
やスラリー化後のドクタ一ブレード法等の周知の方法に
より所字形状に成形した後、大気中等の酸化性雰囲気ま
たは窒素雰囲気中等の非酸化性雰囲気において、８００
〜ｌ０００℃で０．５〜２．０時間焼成することにより
得られる。The above-mentioned dielectric porcelain composition is, for example, Ba
Each material powder of CO 3 , TiO 2 , and Nd 2 O 3 is weighed so as to have a predetermined amount, mixed and pulverized.
The plate is baked for 1 to 3 hours in the air at a temperature of 00 ° C., and the obtained calcined material (composite oxide) is, for example, Zn as a zinc compound.
Each powder of B 2 O 3 and Li 2 CO 3 as O and boron compounds is weighed to a predetermined amount, mixed and pulverized, and press-molded or slurried by a well-known method such as a doctor-blade method after slurrying. After being formed into a shape, it is placed in an oxidizing atmosphere such as the air or a non-oxidizing atmosphere such as a nitrogen atmosphere.
It is obtained by calcining at ｌ1000 ° C. for 0.5 to 2.0 hours.
【００２７】このような誘電体磁器組成物を用いた多層
基板は、上述のように、ドクターブレード法によって得
られたシートを用いて作成される。As described above, a multilayer substrate using such a dielectric ceramic composition is prepared using a sheet obtained by the doctor blade method.
【００２８】即ち、誘電体層１ａ〜１ｄとなるグリーン
シートを用意し、ビアホール導体５となる部分に貫通孔
をパンチング加工を行う。その後、各グリーンシートの
貫通孔にビアホール導体５となる導体を充填印刷をす
る。同時に、各グリーンシート上に各導体２〜４、６と
なる導体膜を印刷形成する。ここで、各導体及び導体膜
は、例えば、Ａｇ系材料を主成分とする導電性ペースト
を用いて、所定パターンに印刷し、乾燥して形成する。That is, a green sheet to be the dielectric layers 1a to 1d is prepared, and a through hole is punched in a portion to be the via hole conductor 5. Thereafter, a conductor to be the via-hole conductor 5 is filled and printed in the through hole of each green sheet. At the same time, conductor films to be the conductors 2 to 4 and 6 are formed on each green sheet by printing. Here, each conductor and the conductor film are formed by, for example, printing in a predetermined pattern using a conductive paste containing an Ag-based material as a main component, and drying.
【００２９】その後、基板の形状に応じて、積層一体化
して、上述のように焼成処理を行う。尚、導体にＡｇ材
料を用いた場合には、大気雰囲気中（酸化性雰囲気）
で、Ｃｕ材料を用いた場合には、中性または還元性雰囲
気で焼成する。Thereafter, according to the shape of the substrate, the layers are integrated and baked as described above. When an Ag material is used for the conductor, the conductor is placed in an air atmosphere (oxidizing atmosphere).
When a Cu material is used, firing is performed in a neutral or reducing atmosphere.
【００３０】その後、積層基板と一体的に焼成された表
面配線導体６上に各種電子部品素子７を搭載して低温焼
成多層基板が完成する。Thereafter, various electronic component elements 7 are mounted on the surface wiring conductors 6 integrally fired with the laminated substrate, thereby completing a low-temperature fired multilayer substrate.
【００３１】尚、上述の導電性ペーストは、Ａｇ系また
はＣｕ系の導体材料、必要に応じてガラス成分、セラミ
ック成分、Ｐｔ、Ｐｄ等の金属を添加を添加して、有機
樹脂、有機溶剤を均質混合して形成されてる。The above-mentioned conductive paste is prepared by adding an Ag-based or Cu-based conductive material and, if necessary, a glass component, a ceramic component, and metals such as Pt and Pd to add an organic resin and an organic solvent. It is formed by homogeneous mixing.
【００３２】これらＡｇ系材料やＣｕ系材料に対してガ
ラス成分やセラミック成分を添加した導電性ペースト
は、主に内部の各種導体２〜５に用いられる。これは、
積層基板の焼結挙動、収縮挙動に近似させ、同時に、接
合強度を向上させるためである。The conductive paste obtained by adding a glass component or a ceramic component to the Ag-based material or the Cu-based material is mainly used for various internal conductors 2 to 5. this is,
This is for approximating the sintering behavior and shrinkage behavior of the laminated substrate, and at the same time, improving the bonding strength.
【００３３】また、Ｐｔを添加した導電性ペーストは、
主に表面導体導体６を形成する際に用いられる。これ
は、表面の半田ぬれ性、ボンディングワイヤ接合性を向
上させるためである。The conductive paste to which Pt is added is
Mainly used when forming the surface conductor 6. This is to improve the solder wettability and bonding wire bonding property on the surface.
【００３４】[0034]
【実施例】まず、純度９９％以上のＢａＣＯ3 、ＴｉＯ
3 、Ｎｄ2 Ｏ3 の各原料粉末を表１に示す量となるよう
に秤量し、原料粉末に媒体として純水を加えて２４時
間、ＺｒＯ2 ボールを用いたボールミルにて混合した
後、該混合物を乾燥し、次いで該乾燥物を大気中におい
て１２００℃の温度で１時間仮焼した。得られた仮焼物
にＺｎＯ、Ｂ2 Ｏ3 、Ｌｉ2 ＣＯ３の粉末を表ｌに示す
割合となるように秤量し、上記ボールミルにて２４時
間、混合した後、バインダーとしてボリビニルアルコー
ルを１重量％加えてから造粒し、該造粒物を約１ｔ／ｃ
ｍ2 の加圧力でプレス成型して直径約１２ｍｍ、高さ１
０ｍｍの円柱状の成形体を成形した。その後、前記成形
体を大気中、４００℃の温度で４時間加熱して脱バイン
ダー処理し、引き続き、大気中において表２に示す各温
度で６０分間焼成した。かくして得られた円柱体の両端
面を平面研磨し、誘電体特性評価用試料を作製した。誘
電体特性の評価は、評価用試料を用いて誘電体円柱共振
器法により、共振周波数を６〜８ＧＨｚに設定して各試
料の比誘電率εｒと７ＧＨｚにおける１／tan δ、即ち
Ｑ値を測定するとともに、一４０〜＋８５℃の温度範囲
における共振周波数の温度係数τｆを測定した。First, BaCO 3 and TiO having a purity of 99% or more were used.
3 , Nd 2 O 3 raw material powders were weighed to the amounts shown in Table 1, pure water was added as a medium to the raw material powders and mixed for 24 hours in a ball mill using ZrO 2 balls. The mixture was dried and then calcined at 1200 ° C. for 1 hour in air. Powders of ZnO, B 2 O 3 , and Li 2 CO 3 were weighed into the calcined product so as to have the proportions shown in Table 1 and mixed in the above-mentioned ball mill for 24 hours. % And granulated, and the granulated material is reduced to about 1 t / c.
Press molding with a pressing force of m 2 , diameter about 12 mm, height 1
A 0 mm cylindrical molded body was molded. Thereafter, the molded body was heated in the air at a temperature of 400 ° C. for 4 hours to perform a binder removal treatment, and subsequently fired in the air at each temperature shown in Table 2 for 60 minutes. Both end surfaces of the thus obtained cylindrical body were polished to obtain a dielectric property evaluation sample. The dielectric properties were evaluated by setting the resonance frequency to 6 to 8 GHz by the dielectric cylinder resonator method using the evaluation sample, and setting the relative dielectric constant εr of each sample and 1 / tan δ at 7 GHz, that is, the Q value. In addition to the measurement, the temperature coefficient τf of the resonance frequency in the temperature range of -40 to + 85 ° C was measured.
【００３５】[0035]
【表１】 [Table 1]
【００３６】[0036]
【表２】 [Table 2]
【００３７】表２によれば、本発明の誘電体層１ａ〜１
ｄの誘電体磁器組成物では、焼成温度が８８０〜９２０
℃と比較的低温であり、さらに、比誘電率εｒが４０以
上、７ＧＨｚにおけるＱ値が８００以上、かつ共振周波
数の温度係数τｆが０±６０ｐｐｍ／℃以内の優れた特
性を有することができることがわかる。According to Table 2, the dielectric layers 1a to 1 of the present invention are shown.
In the dielectric ceramic composition of d, the firing temperature is 880 to 920.
° C, a relative dielectric constant εr of 40 or more, a Q value at 7 GHz of 800 or more, and a temperature coefficient τf of resonance frequency of 0 ± 60 ppm / ° C or less. Recognize.
【００３８】尚、上述の実施例では、多層基板として、
マイクロストリップ線路を内蔵して共振素子を内蔵した
多層基板、用途して、発振器、帯域フィルタなどである
が、内部導体を互いに対向する平行平板電極導体とし
て、容量素子を形成しても構わない。In the above embodiment, the multilayer substrate is
Although a multilayer substrate having a built-in microstrip line and a built-in resonance element is used, such as an oscillator and a band-pass filter, a capacitive element may be formed by using internal conductors as parallel plate electrode conductors facing each other.
【００３９】[0039]
【発明の効果】本発明の低温焼成多層基板では、焼成温
度が１０００℃以下と比較的低温であるため、少なくと
も内部導体にＡｇやＣｕ等の低導電抵抗の材料を用いる
ことができ、かつ、高周波領域において高い比誘電率を
有するとともに、Ｑ値も高く、共振周波数の温度特性に
も優れた多層基板となる。According to the low-temperature fired multilayer substrate of the present invention, since the firing temperature is relatively low at 1000 ° C. or less, a material having a low conductive resistance such as Ag or Cu can be used for at least the internal conductor, and A multilayer substrate having a high relative dielectric constant in a high frequency region, a high Q value, and excellent temperature characteristics of a resonance frequency is obtained.
【００４０】このため、高周波領域で使用する電子回路
基板や電子部品のより一層の小型化と高性能化が実現で
きる。For this reason, further downsizing and higher performance of electronic circuit boards and electronic components used in a high frequency range can be realized.
【図１】本発明の低温焼成多層基板の断面図である。FIG. 1 is a sectional view of a low-temperature fired multilayer substrate of the present invention.
１・・・積層基板 ２・・・マイクロストリップ線路 ３・・・グランド導体 ４・・・内部配線導体 ５・・・ビアホール導体 ６・・・表面配線導体 DESCRIPTION OF SYMBOLS 1 ... Laminated board 2 ... Microstrip line 3 ... Ground conductor 4 ... Internal wiring conductor 5 ... Via-hole conductor 6 ... Surface wiring conductor
Claims (1)
器材料からなる誘電体層を複数積層するとともに、誘電
体層間にＡｇ系導体又はＣｕ系導体の内部導体を配置し
て成る低温焼成多層基板において、 前記誘電体磁器材料が、ＢａＯ、ＴｉＯ2 、Ｎｄ2 Ｏ3
を含む複合酸化物からなり、一般式ｘＢａＯ・ｙＴｉＯ
2 ・ｚＮｄ2 Ｏ3 で表した時、ｘ、ｙ、ｚの値が、 ０．１０≦ｘ≦０．２０ ０．６０≦ｙ≦０．７０ ０．１０≦ｚ≦０．２０ （ｘ＋ｙ＋ｚ＝１）で表される主成分１００重量部に対
して、亜鉛含有化合物および硼素含有化合物をそれぞれ
ＺｎＯ、Ｂ2 Ｏ3 換算で合計２．０〜８．０重量部含有
し、更にＬｉ含有化合物を炭酸塩換算で１．５〜５．０
重量部含有してことを特徴とする低温焼成多層基板。1. A low-temperature fired multilayer comprising a plurality of dielectric layers made of a dielectric porcelain material which can be fired at 800 to 1000 ° C. and an internal conductor of an Ag-based conductor or a Cu-based conductor disposed between the dielectric layers. In the substrate, the dielectric porcelain material is BaO, TiO 2 , Nd 2 O 3
And a general oxide xBaO.yTiO.
When expressed as 2 · zNd 2 O 3 , the values of x, y, and z are 0.10 ≦ x ≦ 0.20 0.60 ≦ y ≦ 0.70 0.10 ≦ z ≦ 0.20 (x + y + z = The zinc-containing compound and the boron-containing compound are each contained in a total of 2.0 to 8.0 parts by weight in terms of ZnO and B 2 O 3 with respect to 100 parts by weight of the main component represented by 1), and the Li-containing compound is further added. 1.5 to 5.0 in terms of carbonate
A low-temperature fired multilayer substrate characterized by containing by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32680597A JPH11163534A (en) | 1997-11-27 | 1997-11-27 | Low-temperature fired multilayer substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32680597A JPH11163534A (en) | 1997-11-27 | 1997-11-27 | Low-temperature fired multilayer substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11163534A true JPH11163534A (en) | 1999-06-18 |
Family
ID=18191911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32680597A Withdrawn JPH11163534A (en) | 1997-11-27 | 1997-11-27 | Low-temperature fired multilayer substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11163534A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007201262A (en) * | 2006-01-27 | 2007-08-09 | Alps Electric Co Ltd | High frequency circuit device |
-
1997
- 1997-11-27 JP JP32680597A patent/JPH11163534A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007201262A (en) * | 2006-01-27 | 2007-08-09 | Alps Electric Co Ltd | High frequency circuit device |
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